CN115684275A - Hydrogen sensor with dustproof function and preparation method thereof - Google Patents
Hydrogen sensor with dustproof function and preparation method thereof Download PDFInfo
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- CN115684275A CN115684275A CN202211424769.7A CN202211424769A CN115684275A CN 115684275 A CN115684275 A CN 115684275A CN 202211424769 A CN202211424769 A CN 202211424769A CN 115684275 A CN115684275 A CN 115684275A
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Abstract
The invention discloses a hydrogen sensor with a dustproof function, which comprises a substrate and a palladium-nickel alloy film arranged on the substrate, wherein two first lead electrodes used for connecting the palladium-nickel alloy film are arranged on the substrate, a micro-nano dustproof cover is bonded with the substrate to form a cavity, the palladium-nickel alloy film is positioned in the cavity, and the micro-nano dustproof cover is vertically provided with a plurality of micron-sized small through holes corresponding to the substrate. According to the invention, the size of the dust cover is reduced, meanwhile, dust particles with the size of tens of micrometers can be completely prevented from being contaminated by processing a special structure on the dust cover, the performance of a device is not influenced while the packaging volume is greatly reduced, and the dust cover has the beneficial effects of ensuring the response speed, ensuring the detection precision and prolonging the service life.
Description
Technical Field
The invention relates to the technical field of hydrogen sensors, in particular to a hydrogen sensor with a dustproof function and a preparation method thereof.
Background
The hydrogen sensor is very sensitive to hydrogen at normal temperature and has good selectivity, can be used as a sensor for detecting the hydrogen concentration in the environment, is very necessary due to the requirement on safety in production and life, and can avoid the possibility of explosion in time.
Among the existing hydrogen sensors, there is a hydrogen sensor that detects the hydrogen concentration by measuring the change of an electrical signal of a palladium-nickel alloy film in a hydrogen environment. The thickness of the palladium-nickel alloy film is generally in the order of hundred nanometers, and the palladium-nickel alloy film can have great influence on the electrical property after being contaminated by external dust particles; the latter can greatly increase the response time of the palladium-nickel alloy film hydrogen sensor and influence the performance of the device.
Therefore, how to prevent dust particles with the magnitude of tens of microns from being contaminated, the packaging volume is greatly reduced, and meanwhile, the performance of the device is not influenced, and the problem to be solved in the technical field is solved.
Disclosure of Invention
An object of the present invention is to solve at least the above problems and/or disadvantages and to provide at least the advantages described hereinafter.
To achieve these objects and other advantages and in accordance with the purpose of the invention, a hydrogen sensor with a dust-proof function is provided, which includes a substrate, and a palladium-nickel alloy thin film disposed on the substrate, and two first lead electrodes disposed on the substrate for connecting the palladium-nickel alloy thin film;
the micro-nano dust cover is bonded with the substrate to form a cavity, the palladium-nickel alloy film is located in the cavity, and the micro-nano dust cover is vertically provided with a plurality of micron-sized small through holes corresponding to the substrate.
Preferably, among others, a heating assembly is further included, which comprises:
a heating film disposed on the substrate, the heating film being located within the chamber;
and two second lead electrodes disposed on the substrate, the two second lead electrodes being connected to the heating film.
Preferably, the temperature measuring device further comprises a temperature measuring assembly, which comprises:
the temperature measuring film is arranged on the substrate and is positioned in the cavity;
and the two third lead electrodes are arranged on the substrate and connected with the temperature measuring film.
Preferably, a plurality of rectangular holes for routing submicron are further formed in two sides of the micro-nano dust cover respectively.
Preferably, the substrate is any one of a glass substrate, a quartz substrate, and a silicon wafer substrate with an insulating layer covered on the surface; the micro-nano dust cover is any one of a glass micro-nano dust cover, a quartz micro-nano dust cover and a silicon wafer micro-nano dust cover with an insulating layer covered on the surface.
Preferably, the small through hole is any one of a round hole, a rectangular hole and a special-shaped hole.
A preparation method of a hydrogen sensor with a dustproof function comprises the following steps:
step one, taking a first substrate and a second substrate which are made of the same material;
step two, preparing a palladium-nickel alloy film, a heating film and a temperature measuring film on the first substrate respectively, and preparing a plurality of corresponding lead electrodes by photoetching and electron beam evaporation processes;
preparing a first bonding pattern electrode on a first substrate through photoetching and electron beam evaporation processes, wherein the palladium-nickel alloy film, the heating film and the temperature measuring film are all positioned in the first bonding pattern electrode;
etching part of the second substrate through photoetching, RIE and DRIE processes to obtain a micro-nano dustproof cover, and then respectively preparing a plurality of small through holes and a plurality of rectangular holes on the micro-nano dustproof cover through photoetching, RIE and DRIE processes;
fifthly, preparing a second bonding pattern electrode at the bottom end of the micro-nano dust cover through photoetching and electron beam evaporation processes;
and step six, bonding the first substrate and the micro-nano dust cover through the first bonding pattern electrode and the second bonding pattern electrode.
Preferably, the method for preparing the heating film and the thermometric film on the first substrate comprises the following steps:
preparing a layer of metal Pt film on a first substrate by a magnetron sputtering process, and then introducing air into a tubular furnace to carry out heat treatment on the metal Pt film;
patterning metal Pt by photoetching and ion beam etching processes to respectively prepare a heating film and a temperature measuring film;
preparation of SiNx and SiO on a first substrate by PECVD process 2 The composite film layer of (1);
and etching away the composite film layer in the region where the heating film and the temperature measuring film are located by RIE (reactive ion etching) process.
Preferably, the method for preparing the palladium-nickel alloy film on the first substrate comprises the following steps:
in SiNx and SiO 2 The palladium-nickel alloy film is prepared on the composite film layer by photoetching and magnetron sputtering processes.
The invention at least comprises the following beneficial effects:
firstly, the size of the dust cover is reduced, dust particles with the size of tens of microns can be completely prevented from being contaminated by processing a special structure on the dust cover, the performance of a device is not affected while the packaging volume is greatly reduced, and the dust cover has the advantages of ensuring the response speed, ensuring the detection precision and prolonging the service life.
Secondly, in the invention, the heating film heats in the cavity, so that the temperature in the cavity is increased to heat the palladium-nickel alloy film, and the palladium-nickel alloy film has higher sensitivity and stability after being heated, and has the advantages of improving the sensitivity and ensuring the stability.
Thirdly, in the invention, the sensitivity and stability of the palladium-nickel alloy film can be intuitively fed back through the temperature measuring film, and the invention has the advantages of ensuring the measuring effect and the stability.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a top view of the present invention.
Fig. 3 is a top view of another embodiment of the present invention.
Detailed Description
The present invention is further described in detail below with reference to the attached drawings so that those skilled in the art can implement the invention by referring to the description text.
It will be understood that terms such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
It is to be understood that in the description of the present invention, the terms indicating orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are used only for convenience in describing the present invention and for simplification of the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, unless otherwise specifically stated or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are used broadly, and for example, "connected" may be a fixed connection, a detachable connection, or an integral connection, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, or a communication between two elements, and those skilled in the art will understand the specific meaning of the terms in the present invention specifically.
Further, in the present invention, unless otherwise explicitly specified or limited, a first feature "on" or "under" a second feature may be directly contacted with the first and second features, or indirectly contacted with the first and second features through an intermediate. Also, a first feature "on," "above," and "over" a second feature may be directly on or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Fig. 1 shows an implementation form of the present invention, which includes a substrate 1, and a palladium-nickel alloy thin film 2 disposed on the substrate 1, and two first lead electrodes 21 for connecting the palladium-nickel alloy thin film 2 are disposed on the substrate 1;
the micro-nano dust cover 3 is bonded with the substrate 1 to form a cavity 31, the palladium-nickel alloy film 2 is located in the cavity 31, and the micro-nano dust cover 3 is vertically provided with a plurality of micron-sized small through holes 32 corresponding to the substrate 1.
The working principle is as follows: the two first lead electrodes 21 are connected with the palladium-nickel alloy film 2, the hydrogen concentration is detected by measuring the change of an electrical signal of the palladium-nickel alloy film 2 in a hydrogen environment, the palladium-nickel alloy film 2 is packaged through the micro-nano dust cover 3, the packaging volume is greatly reduced, and hydrogen can enter the micro-nano dust cover 3 through the micron-sized small through holes 32 on the micro-nano dust cover 3, so that the timely and accurate detection of the hydrogen concentration of the palladium-nickel alloy film 2 is ensured, meanwhile, dust particles with the size of more than tens of microns are prevented from entering the micro-nano dust cover 3 through the micron-sized small through holes 32, the palladium-nickel alloy film 2 is effectively prevented from being contaminated by dust, the response speed is ensured, in the technical scheme, the size of the dust cover is reduced, meanwhile, the dust particles with the size of tens of microns can be completely prevented by processing a special structure on the dust cover, the performance of a device is ensured to be not affected while the packaging volume is greatly reduced, and the beneficial effects of ensuring the response speed, ensuring the detection precision and prolonging the service life are achieved.
In the above scheme, the heating device further comprises a heating assembly, which comprises:
a heating thin film 4 disposed on the substrate 1, the heating thin film 4 being located within the chamber 31;
two second lead electrodes 41 disposed on the substrate 1, and the two second lead electrodes 41 are connected to the heating film 4.
The working principle is as follows: in the using process, the two second lead electrodes 41 are connected with the power supply, so that the heating film 4 heats in the chamber 31, the temperature in the chamber 31 is increased, the palladium-nickel alloy film 2 is heated, the palladium-nickel alloy film 2 has higher sensitivity and stability, and the heating temperature is 50-70 ℃, so that the palladium-nickel alloy film has the advantages of improving the sensitivity and ensuring the stability.
In the above scheme, still include the temperature measurement subassembly, it includes:
the temperature measurement film 5 is arranged on the substrate 1, and the temperature measurement film 5 is positioned in the cavity 31;
and the two third lead electrodes 51 are arranged on the substrate 1, and the two third lead electrodes 51 are connected with the temperature measuring film 5.
The working principle is as follows: the resistance of the temperature measuring film 5 changes at different temperatures, and the temperature change in the cavity 31 can be known by measuring the resistance change of the temperature measuring film 5 through the two third lead electrodes 51, and the sensitivity and stability of the palladium-nickel alloy film 2 are directly influenced by the temperature, so that the sensitivity and stability of the palladium-nickel alloy film 2 can be visually fed back through the temperature measuring film 5, and the method has the advantages of ensuring the measuring effect and stability.
In the above scheme, the two sides of the micro-nano dust cover 3 are further respectively provided with a plurality of rectangular holes 33 for routing submicron. The components inside the chamber 31 and the components outside the chamber 31 are convenient to route through the rectangular holes 33, and through the plurality of sub-micron rectangular holes 33, large dust can be effectively prevented from entering the chamber 31, so that the dustproof device has the advantages of being convenient to operate and guaranteeing the dustproof effect.
In the above scheme, the substrate 1 is any one of a glass substrate, a quartz substrate and a silicon wafer substrate with an insulating layer covered on the surface; the micro-nano dust cover 3 is any one of a glass micro-nano dust cover, a quartz micro-nano dust cover and a silicon wafer micro-nano dust cover with an insulating layer covered on the surface. The materials of the substrate 1 and the micro-nano dust cover 3 are selected according to different actual requirements, so that the measuring effect under different environments is guaranteed, and the method has the advantage of enhancing the applicability.
In the above solution, the small through hole 32 is any one of a circular hole, a rectangular hole, and a special-shaped hole. According to different use requirements, the small through holes 32 are set to be different in shape, so that the ventilation performance and the dust prevention performance of the small through holes 32 in different use requirements are guaranteed.
Example (b):
step one, taking two first Si substrates 1 and two second Si substrates with the diameters of 2 inches, and growing a layer of SiO with the thickness of about 300nm on the surfaces of the first Si substrate 1 and the second Si substrate respectively by adopting a PECVD process 2 An insulating layer;
step two, preparing a layer of metal Pt film with the thickness of 200nm on the first Si substrate 1 through a magnetron sputtering process, and then introducing air into a tube furnace to carry out heat treatment on the metal Pt film at 400 ℃;
patterning the metal Pt by photoetching and ion beam etching processes to respectively prepare a heating film 4 and a temperature measuring film 5;
SiNx with a thickness of 200nm and SiO with a thickness of 100nm were prepared on the first Si substrate 1 by PECVD process 2 The composite film layer of (1);
etching away the composite film layer in the area where the heating film 4 and the temperature measuring film 5 are located by RIE (reactive ion etching) process;
in SiNx and SiO 2 Preparing a palladium-nickel alloy film 2 with the thickness of 100nm on the composite film layer through photoetching and magnetron sputtering processes;
preparing a plurality of Au lead electrodes with the thickness of 300nm by photoetching and electron beam evaporation processes;
step three, preparing a first Au bonding pattern electrode with the thickness of 300nm on the first Si substrate 1 through photoetching and electron beam evaporation processes, wherein the palladium-nickel alloy film 2, the heating film 4 and the temperature measuring film 5 are all positioned in the first Au bonding pattern electrode;
step four, etching off the SiO on the second Si substrate 2 by photoetching, RIE and DRIE processes 2 Obtaining a micro-nano dust cover 3 by an insulating layer and a part of second Si substrate, and respectively preparing a plurality of small through holes 32 and a plurality of rectangular holes 33 on the micro-nano dust cover by photoetching, RIE and DRIE processes, wherein the diameter of each small through hole 32 is 50 mu m, and the length and the width of each rectangular hole 33 are respectivelyRectangles of 100 μm and 5 μm;
step five, preparing a second Au bonding pattern electrode with the thickness of 300nm at the bottom end of the micro-nano dust cover 3 through photoetching and electron beam evaporation processes;
and step six, bonding the first Si substrate 1 and the micro-nano dust cover 3 through the first Au bonding pattern electrode and the second Au bonding pattern electrode, and thus completing the preparation of the hydrogen sensor with the dust prevention function.
While embodiments of the invention have been described above, it is not limited to the applications set forth in the description and the embodiments, which are fully applicable in various fields of endeavor to which the invention pertains, and further modifications may readily be made by those skilled in the art, it being understood that the invention is not limited to the details shown and described herein without departing from the general concept defined by the appended claims and their equivalents.
Claims (9)
1. The utility model provides a hydrogen sensor that possesses dustproof function, includes the substrate, and sets up palladium nickel alloy film on the substrate, and be provided with two first lead wire electrodes that are used for connecting palladium nickel alloy film on the substrate, its characterized in that:
the micro-nano dust cover is bonded with the substrate to form a cavity, the palladium-nickel alloy film is located in the cavity, and the micro-nano dust cover is vertically provided with a plurality of micron-sized small through holes corresponding to the substrate.
2. The hydrogen sensor with dust-proof function according to claim 1, further comprising a heating assembly, which comprises:
a heating film disposed on the substrate, the heating film being located within the chamber;
and two second lead electrodes disposed on the substrate, the two second lead electrodes being connected to the heating film.
3. The hydrogen sensor with dustproof function of claim 1, further comprising a temperature measurement component, which comprises:
the temperature measuring film is arranged on the substrate and is positioned in the cavity;
and the two third lead electrodes are arranged on the substrate and are connected with the temperature measuring film.
4. The hydrogen sensor with the dustproof function according to claim 1, wherein a plurality of rectangular holes for routing submicron are formed in two sides of the micro-nano dustproof cover respectively.
5. The hydrogen sensor with a dustproof function according to claim 1, wherein the substrate is any one of a glass substrate, a quartz substrate, and a silicon wafer substrate with an insulating layer covering a surface thereof; the micro-nano dust cover is set to be any one of a glass micro-nano dust cover, a quartz micro-nano dust cover and a silicon wafer micro-nano dust cover with an insulating layer covered on the surface.
6. The hydrogen sensor with the dustproof function according to claim 1, wherein the small through hole is any one of a circular hole, a rectangular hole, and a special-shaped hole.
7. The method for preparing a hydrogen sensor with a dustproof function according to the device of claims 1 to 6, comprising the following steps:
step one, taking a first substrate and a second substrate which are made of the same material;
step two, preparing a palladium-nickel alloy film, a heating film and a temperature measuring film on the first substrate respectively, and preparing a plurality of corresponding lead electrodes by photoetching and electron beam evaporation processes;
preparing a first bonding pattern electrode on a first substrate through photoetching and electron beam evaporation processes, wherein the palladium-nickel alloy film, the heating film and the temperature measuring film are all positioned in the first bonding pattern electrode;
etching part of the second substrate through photoetching, RIE and DRIE processes to obtain a micro-nano dustproof cover, and then respectively preparing a plurality of small through holes and a plurality of rectangular holes on the micro-nano dustproof cover through photoetching, RIE and DRIE processes;
step five, preparing a second bonding pattern electrode at the bottom end of the micro-nano dust cover through photoetching and electron beam evaporation processes;
and step six, bonding the first substrate and the micro-nano dust cover through the first bonding pattern electrode and the second bonding pattern electrode.
8. The method for preparing a hydrogen sensor with a dustproof function according to claim 7, wherein the method for preparing the heating film and the temperature measuring film on the first substrate comprises the following steps:
preparing a layer of metal film on a first substrate by a magnetron sputtering process, and then introducing air into a tube furnace to carry out heat treatment on the metal film;
patterning the metal film by photoetching and ion beam etching processes to respectively prepare a heating film and a temperature measuring film;
preparation of SiNx and SiO on a first substrate by PECVD process 2 The composite film layer of (1);
and etching away the composite film layer in the region where the heating film and the temperature measuring film are located by RIE (reactive ion etching) process.
9. The method for preparing a hydrogen sensor with a dustproof function according to claim 8, wherein the method for preparing the palladium-nickel alloy film on the first substrate comprises the following steps:
in SiNx and SiO 2 The palladium-nickel alloy film is prepared on the composite film layer by photoetching and magnetron sputtering processes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211424769.7A CN115684275A (en) | 2022-11-14 | 2022-11-14 | Hydrogen sensor with dustproof function and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211424769.7A CN115684275A (en) | 2022-11-14 | 2022-11-14 | Hydrogen sensor with dustproof function and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN115684275A true CN115684275A (en) | 2023-02-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202211424769.7A Pending CN115684275A (en) | 2022-11-14 | 2022-11-14 | Hydrogen sensor with dustproof function and preparation method thereof |
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| CN (1) | CN115684275A (en) |
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- 2022-11-14 CN CN202211424769.7A patent/CN115684275A/en active Pending
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