JP3387659B2 - Heat-dependent detector and manufacturing method - Google Patents

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION This invention relates to heat-dependent detectors and methods of manufacture, and more particularly to temperature, humidity, gas, infrared,
The present invention relates to a detector for measuring physical objects to be measured whose measured values depend on heat (temperature) such as pressure, degree of vacuum, acceleration, flow rate and flow velocity, and a manufacturing method thereof.

[0002]

2. Description of the Related Art FIG. 6 is a configuration diagram for explaining an example of a conventional detector. FIG. 6 (a) is a plan view and FIG. 6 (b) is a sectional view taken along line BB of FIG. 6 (a). In the drawing, 21 is, for example, a Si substrate, 22 is a cavity provided in the Si substrate 21, and, as is well known, the upper portion of the cavity 22 is, for example,
Bridge 23 made of insulating film such as SiO ₂ or Ta ₂ O ₅
Is laid on the bridge 23, for example, Pt, NiC
A resistor pattern 24 made of r or the like is provided, and a protective film 25 made of SiO ₂ , Ta ₂ O ₅ or the like is further provided on the resistor pattern 24, and the resistor is passed through a bonding wire 26. An electric current is passed through the pattern 24, and the resistor pattern 24 has a heating portion or a temperature sensing (heat) portion A.
Is heated.

Taking the case of measuring the humidity using the detector as described above as an example, the resistance value of the resistor 24 depends on the ambient temperature and humidity. A resistance value related to ambient temperature is measured by passing such a minute current, and then a resistance value related to ambient temperature and humidity is measured by flowing a current having humidity sensitivity. The ambient humidity is measured by subtracting the measured value for.

The detection device as described above uses a fine processing technique for semiconductors and integrated circuits to generate heat or to separate a space from the substrate 21 (a cavity 22 is provided in the substrate 21 to avoid heat conduction with the substrate 21). Although the temperature sensitive portion A is formed, the size of the chip is 0.1 to 2 mm in thickness and the width is 0.5 × 0.5 mm to 10 × 10 m in view of the normal level of semiconductor manufacturing technology.
m. If the above-described cavity 22 is provided within this dimension, the distance between the heat-generating portion or temperature-sensing portion A and the cavity wall 22b becomes particularly close to 50 to 300 μm with respect to the cavity bottom 22a,
I can't take a big distance. If this distance is short, the heat generating portion is affected by the temperature state of the substrate 21 having a far larger heat capacity than the heat generating portion A, and the effect of thermal insulation due to the hollow portion is lost. That is, since the heat radiation from the substrate 21 and the heat conduction of the atmosphere in the cavity 22 are close in distance, there is a drawback that the effect of such heat insulation is lost.

FIG. 7 is a main part configuration diagram for explaining another example of a conventional detection device. In the figure, 21 is a substrate, 22 is a cavity, 23 is a bridge made of an insulating film, and 24 is heat or a feeling. A warm material, 24a is a lead pattern for the heat-generating or temperature-sensitive material 24, 26 is a bonding wire, 27 is a lead wire, 28 is a package base, 29 is a package cap, and the detection unit composed of the substrate 21 to the bonding wire 26 is The ambient temperature, humidity and other physical quantities are measured in the same manner as in FIG.

In the detection device as described above, the influence of the heat received by the temperature-sensitive material 24 on the substrate is that the heat radiation from the peripheral substrate 21 (a ₁ ), the heat radiation from the external package 29 (a ₂ ), the bridge Heat conduction from the suspension 23 (b ₁ ), heat conduction from the package base 28 (b ₂ ),
There is heat conduction in the surrounding convection (b ₃ ). This temperature sensitive material 2
The response time of the ambient temperature of 4 is 8
If the temperature of 0 ° C. is changed to 20 ° C., the temperature sensitive material 24 becomes 2
It takes about 20 minutes to reach 0 ° C. Temperature-sensitive material 24
Is not in contact with the packages 28, 29 and the substrate 21 because it is through the cavity 22 of the substrate 21, and may have a small heat capacity, so that it may adapt to the temperature of the ambient atmosphere more rapidly. However, in reality, it takes a lot of time as described above. The package-based response time is also about 20 min. Therefore, the temperature sensitive material does not have a short response time with or without a cavity.

In the detection device as described above, for example, temperature, humidity, gas, infrared rays, pressure, vacuum degree, acceleration, flow rate and flow velocity are detected by arranging the materials of heat generation or temperature sensing parts and their arrangement. As the physical phenomenon to be measured, the following principles 1 to 7, namely, 1. As the resistance value change of the electric resistor, 2. It has a sensitive film for desorbing an atmosphere and the electric resistance value of the sensitive film changes. 3. It has a sensitive film that desorbs an atmosphere, and the capacitance of the sensitive film changes. 4. A sensitive film for desorbing an atmosphere is provided, and a change in weight of the sensitive film is used as a change in resonance frequency. 5. Having a sensitive film for desorbing the atmosphere, the reaction heat is generated by the chemical reaction of the sensitive film, and this heat is used as the resistance value change of another resistor. 6. The temperature change is taken as the output voltage change of the thermocouple membrane, It is measured by using the amount of deflection as the output voltage change of the piezoresistive effect.

[0008]

When the physical quantity of the object to be measured is measured by using the above-mentioned measurement principles 1 to 7, the measured value is influenced by the temperature. If you don't know it accurately, you will get meaningless measurement results. For example, when the pressure of a gas is detected by piezo resistance, if the temperature of the gas is not known, the accurate pressure cannot be known. It suffices that the temperature of the gas and the temperature of the piezoresistive (the piezoresistive have temperature dependence) have a certain known relationship, but if not, a solution of temperature compensation is used. However, if the piezoresistor is left in gas until temperature equilibrium is reached,
Actually, the temperature change of the gas and the temperature change of the piezoresistance cannot follow because of the large heat capacity of the piezoresistance. As a result, temperature compensation becomes incomplete.

The present invention has been made in view of the above circumstances, and in particular, in a detector in which a heat-dependent detection element such as a temperature-sensitive or moisture-sensitive material is provided on a substrate, it is fixed to a frame. By providing the heat-dependent detection element at a position away from the frame, which has a large heat capacity and a slow thermal response to changes in the ambient temperature, and reduces the heat capacity without lowering the detection sensitivity, the correct temperature The first object is to detect the physical quantity of the object to be measured and correct it to the physical quantity at the reference temperature.
When manufacturing a heat-dependent detection element, a protective outer frame with a semiconductor substrate is provided around the heat-dependent detection element so as not to damage the heat-dependent detection element of the main part, and the protection outer frame is made to depend on the heat dependency. Another purpose is to improve the yield of the heat-dependent detection element by removing the detection element after it is fixed to the frame.

[0010]

In order to solve the above problems, the present invention provides (1) a substrate having an insulating film on its surface, a frame for fixing and supporting the substrate at one end side, and an insulating film on the insulating film. The thermal dependence detecting element is provided for detecting the physical quantity of the measured object provided, and the thermal dependence detecting element is provided on the free end side of the substrate fixed to the frame, and the thermal dependence is provided. The portion provided with the detection element is not provided with the substrate, and (2) the substrate having an insulating film on the surface and the physical quantity of the object to be measured provided on the insulating film are detected. A heat-dependent detection element, and a lead connected to the heat-dependent detection element, the substrate being insulated and fixedly supported at one end side, and the substrate provided in a portion where the heat-dependent detection element is provided. Not having, or
(3) When the heat-dependent detection element is formed, the frame
Alternatively, from the fixing side of the substrate fixed to the lead to the free end side, a protective outer frame for protecting the heat-dependent detection element, which is supported by a separation groove, is provided, and the frame is provided.
Alternatively , after fixing the heat-dependent detection element to a lead , the protective outer frame is separated, and further, (4) a plurality of the heat-dependent detection elements are provided on a substrate having an insulating film on the surface. Formed linearly, after filling the gap generated between the formed plurality of heat-dependent detection elements with a filling material and solidifying, the individual heat-dependent detection elements are separated and insulated and fixed to the frame or lead, It is characterized in that the filler is removed.

[0011]

By the fine processing technology of the semiconductor integrated circuit, the thermal dependency detecting element is provided on one end side and the lead pad of the thermal dependency detecting element is provided on the other end side on the insulating film on the substrate surface, and the thermal dependency detecting element is further provided. Atmospheric temperature that is not affected by the temperature of the frame by fixing the other end of the board to the frame or the lead with the large heat capacity by reducing the heat capacity by removing the board part on which the element is provided It is possible to obtain the physical quantity of the object to be measured in. Further, one method for manufacturing the heat-dependent detection element is to provide a protective outer frame having a cut groove on the substrate so as not to damage the heat-dependent detection element, and to frame the substrate on the lead pad side. The protective outer frame is fixed to the frame and then separated from the separation groove after fixing to the frame.The other method is to embed resin in the cavity of the substrate on which multiple heat-dependent detection elements are made by microfabrication technology. The resin is dissolved after being cut into separate heat-dependent detection elements.

[0012]

【Example】

[Embodiment 1] (corresponding to claim 1) FIG. 1 is a view for explaining an example of a main structure of a heat dependence detector according to the present invention, and FIG. 1 (a) is a heat dependence detector. 1B is a partial plan view of FIG.
FIG. 2 is a sectional view taken along the line B ′, in which 1 is a frame, 2 is a substrate,
Reference numeral 3 is an insulating film, 4 is a heat dependency detecting element, 5 is a resistor pattern, 6 is a lead, 7 is a bonding wire, and 8 is a protective film.

The heat-dependent detector shown in FIG. 1A is an example in which the heat-dependent detecting element 4 is a temperature sensitive element. The substrate 2 is, for example, an N-type Si (100) rectangular substrate, and an insulating film 3 of SiO ₂ , Ta ₂ O ₅ or the like is formed on the surface thereof. On the insulating film 3 on the substrate 2, a resistor pattern 5 is formed on one end side of the substrate 2 by a fine processing method of a semiconductor integrated circuit such as a photolithography technique, a film forming technique and an etching technique.

The resistor pattern 5 is for detecting the physical quantity (temperature in the case shown) of the object to be measured, and Pt,
This is a temperature-sensitive sensor having a high resistance value in which concentric circular patterns made of resistive thin films made of NiCr or the like are connected in series, and parallel wide lead patterns 5a made of the same resistive thin films and lead pads 5b are connected to the ends. Has been done.

In order to reduce the heat capacity of the heat-dependent detection element 4, the substrate 2 differs from the portion where the heat-dependent detection element 4 is fixed to the frame 1 and the outer peripheral portions of the lead pattern 5a and the resistor pattern 5. By anisotropic etching (11
1) Removed according to face. Further, the portion of the resistor pattern 5 is removed by anisotropic etching while leaving the circular insulating film 3 slightly larger than the resistor pattern 5. The removed substrate is etched from the top and bottom to prevent undercut,
As shown in (b), it has a V-shaped cross section.
A hole 3a is provided in the center of the insulating film 3 to further reduce the heat capacity of the heat dependency detecting element 4 portion.

The heat-dependent detection element 4 formed as described above.
Is fixed to the frame 1 in a cantilever shape at the substrate fixing portion 2a with an adhesive or the like, and the lead 6 and the lead pad 5b are connected by a bonding wire 7.

In the heat-dependent detector having the above-described structure, the heat-dependent detector element 4 is arranged at a position separated from the frame 1 having a large heat capacity, and is supported in a cantilever shape by the lead pattern 5a. The heat effect from the frame 1 side to the heat-dependent detection element 4 is small, and moreover, the heat-dependent detection element 4 does not have the substrate 2, so the heat capacity is small, and the temperature is detected by the heat-dependent detection element 4 according to the ambient temperature. It becomes possible.

The heat-dependent detector shown in FIG.
When used as a gas flow rate / flow rate sensor, the heat dependency detecting element 4 applies a predetermined current to the resistance pattern 5 to generate heat, and the generated heat is radiated by the gas flow, and the flow rate changes as a change in resistance value due to temperature change. Is detected. The gas flow at this time can be set in any of the Z-direction, Y-direction, and X-direction flows perpendicular to the plane (parallel to the paper surface) indicated by the arrow. However, in the X direction, it is necessary to limit the heat-dependent detection element 4 to the upstream side so as not to be affected by the heat of the frame 1 and the like.

The thermal dependence detecting element 4 shown in FIG.
Is fixed to the frame 1 at one end side, but it is also possible to omit the frame 1 and directly fix to the lead 6.

[Embodiment 2] (corresponding to claim 2) FIG. 2 is a view for explaining an example in which a heat-dependent detection element is directly fixed and supported on a lead, and FIG. 2 (a) is a plan view. ,
2B is a sectional view taken along the line BB ′ of FIG.
(C ₁ ), (c ₂ ), and (c ₃ ) are views taken along the line CC ′ of FIG.
In the figure, 9 is an insulating layer, 10 is an adhesive,
The same reference numerals as in the case of FIG. 1 are attached to the portions having the same operations as in FIG.

The thermal dependence detecting element 4 is provided on the insulating film 3 on the surface of the substrate 2 shown in FIG. 1, and the frame 1 is directly fixed to the back surface thereof. However, the thermal dependence shown in FIG. On the back surface of the substrate 2 of the detector, thermal oxidation, PVD (Physcal Vapo)
r Deposition) or CVD (Chemical Vapor Depositio)
An insulating layer 9 made of thin film SiO ₂ or the like formed by n) or the like is formed, and is insulated and fixed to the pair of leads 6 by an adhesive material 10.

As shown in FIG. 2, an insulating layer 9 is formed on the lower surface of the substrate 2 of the thermal dependency detecting element 4 provided on the insulating film 3 having no substrate 2, and the substrate 2 is directly lead 6 Since the frame 1 is fixed, the frame 1 becomes unnecessary and the cost is reduced. In FIG. 1 (c ₁ ), when the lead 6 is a metal, in FIG. 1 (c ₂ ) the lead 6 is an insulator (polyimide, glass evo, etc.) and a conductive material 6 a of Cu or Au is adhered to the entire surface. 1 (c ₃ ) shows a method of fixing the substrate 2 and the lead 6 in the case where the lead 6 is an insulator and a conductive material 6a of Cu or Au is partially adhered to the surface. If there is 9, it can be directly fixed to the conductive lead,
If the insulating layer 9 is not provided, it is fixed to the insulating lead.

The heat-dependent detection element 4 is not limited to the temperature sensor made of a resistor, but a part of the resistance pattern 5 is deleted, and a porous sintered body of TiO ₂ , V ₂ O ₅ or the like is added to this portion. ,
By connecting a moisture-sensitive conductive material such as a synthetic resin such as a styrene polymer or the like, the moisture-sensitive sensor or other heat-dependent detection element can be used.

However, since the heat dependency detecting element 4 thus constructed is thin and has a low mechanical strength when handling a fine structure, it is protected so that a machining tool or the like does not directly contact the structure. There is a need. Therefore, it is effective to install an outer fence around the structure to protect it.
Hereinafter, a method for manufacturing a heat-dependent detector having a protective outer frame will be described.

[Third Embodiment] (Corresponding to Claim 3) FIG. 3 is a plan view for explaining a method of manufacturing a thermal dependence detector according to the present invention, and FIG. 4 is a cross-sectional view of each portion of FIG. It is a figure for demonstrating a shape, FIG.4 (a) is the arrow AA 'sectional view taken on the line of FIG. 2, FIG.4 (b) is the arrow BB' of FIG.
A line sectional view, FIG. 4 (c) is a sectional view taken along the line CC ′ of FIG. 3, in which 11 is a hollow portion, 12 is a separating groove, and 13 is a protective outer frame. Figure 1 shows the parts that act.
The same reference numerals as in the above are attached.

Next, a method of manufacturing the heat-dependent detector will be described with reference to FIG.
Follow the instructions below. (1) A protective outer frame having a separation groove is provided on the Si substrate.
The thermal dependency detection element 4 shown in FIG. 1A is formed on a rectangular Si substrate (100) having an insulating film 3 made of TiO ₃ , Ta ₂ O ₅ or the like on the surface thereof, by photolithography technology, film formation technology. And a pattern is formed by an etching technique to form a resistance pattern 5, and is anisotropically etched in the same step as the step of forming the fixed portion 2a, the lead portion 2b, and the detection portion 2c on the substrate 2. Make the outer frame 13.

The protective outer frame 13 has a U-shape constituted by the outer circumferences of the other three sides excluding the fixing portion 2a on one side of the rectangular substrate 2, and both ends thereof are separated from the fixing portion 2a of the substrate 2. Groove 1
Connected by two. The separation groove 12 is (11
1) V-shaped by the plane, in the line AA of the arrow in FIG.
In the case of the front side only groove 12a shown in FIGS. 4 (a)-(1), the back side only groove 12b shown in FIGS. 4 (a)-(2),
Further, as shown in FIGS. 4 (a)-(3), the groove 12 from both surfaces
Grooving of a and 12b may be performed.

In order to provide the protective outer frame 13, the cavity portion 11 is provided between the heat dependency detecting element 4 and the lead portion 2b. Since the cavity 11 is formed by anisotropic etching from the front and back sides of the substrate 2, in the portion of the thermal dependence detection element 4, the cavity 11 is formed as shown in FIG.
As shown in (b), the resistance pattern 5 is formed on the insulating film 3, and only the portion covered with the protective film 8 remains.

The cavity 11 along the line CC 'shown in FIG. 4 (c) only leaves the fixing portion 2a of the substrate 2 and the protective outer frame 13. (2) Fix the substrate to the frame. The heat-dependent detection element 4 shown in FIG. 3 and the substrate 2 having the protective outer frame 13 supported by the separation groove 12 are fixed to the frame 1 at the fixing portion 2a on one end side with an adhesive or the like. (3) Separate the protective outer frame. When the structure such as the heat-dependent detection element 4 is completed, the protective outer frame 13 completes the purpose of protection, and has a large heat capacity, which affects the heat-dependent detection element 4 thermally. Disconnect from. (4) Wire bonding is performed. The lead 6 of the frame 1 and the lead pattern 5 of the thermal dependence detection element 4 of the substrate 2
a is connected by a bonding wire 7 at the lead pad 5b of the lead pattern 5a. In addition,
The step (3) of separating the protective outer frame and the step (4) of wire bonding may be reversed. (5) Package sealing. The heat-dependent detection element 4 fixed to the frame 1 is fixed to a package base (not shown) having a lead wire (not shown) via the frame 1 and the lead wire and the heat-dependent detection element, for example. 4 is connected, and then the package is sealed with a cap (not shown) to complete the heat-dependent detector.

As shown in the above steps, when the heat dependency detecting element 4 is formed on the substrate 2 by the fine processing technique of the semiconductor integrated circuit, at the same time, the protective outer frame 13 is provided on the substrate 2 and fixed to the frame 1. The protective outer frame 13 is separated from the groove 12 so that the heat-dependent detection element is not damaged and the yield is improved.

As described above, the manufacture of the heat-dependent detector in which the protective outer frame 13 is provided around the heat-dependent detection element 4 in order to prevent the thin film-shaped heat-dependent detection element 4 from being damaged by a processing jig or the like. Although the method has been described, it is also possible to protect the heat-dependent detection element 4 without providing the protective outer frame 13.

[Fourth Embodiment] (Corresponding to Claim 4) FIG. 5 is a view for explaining a step of another manufacturing method of the thermal dependence detector, and FIG. 5 (a) shows the first step. plan view of the substrate, FIG. 5 (b ₁₎ the state of the heat-dependent detection elements separate from, 5 (b ₂₎ is 5 (b ₁₎ arrow B ₁ -B ₁ line sectional view of FIG. 5 ( c ₁ ) is adhered to the frame, FIG.
(C ₂₎ are arrow C ₁ -C ₁ line sectional view of FIG. 5 (c _1), 5
(D ₁ ) is a diagram showing a completed drawing, and FIG. 5 (d ₂ ) is FIG. 5 (d ₁ ).
₁ is a cross-sectional view taken along the line D ₁ -D _{1 of} FIG. ₁ , in which 14 is a single substrate, 15 is a gap, and 16 is a resin. , 3, the same reference numerals are attached.

Next, another method of manufacturing the heat-dependent detector will be described with reference to FIG. (1) A plurality of heat-dependent detection elements are formed on a single substrate such as Si (shown by hatching in FIG. 5A), and resin is applied to the gap 15 formed between the heat-dependent detection elements. fill in. In the same manner as described with reference to FIG. 3, the heat-dependent detection element 4 is patterned and formed into a film by the photolithography technology, the film formation technology, and the etching technology, and the plurality of heat-dependent detection elements 4 are separated by X.
Direction and Y direction are formed linearly (hatched portion in FIG. 5A). Therefore, a thin film-shaped heat detecting element 4 and a gap portion (white portion in FIG. 5A) 15 between adjacent heat detecting elements 4 are generated. A filling material such as a resin such as acrylic is embedded in the gap 15 and solidified (FIG. 5A). (2) Separate each heat-dependent detection element. Gap 15
A single substrate 1 in which a resin 16 such as acrylic is embedded
4 is the lines X ₁ -X ₁ , X in the vertical and horizontal directions due to dicing or the like.
_{2 -X 2, ..., X n} -X n, Y 1 -Y 1, Y 2 -Y 2, Y 3 -Y 3
The individual heat-dependent detection elements 4 having the resin 16 are separated according to (FIG. 5 (b ₁ ) (b ₂ )). (3) Adhere to the frame. With the resin 16 fixed, the thermal dependency detecting element 4 is attached to the frame 1 on the lead pad side.
It is fixed to the surface with an adhesive (Fig. 5 (c ₁ ) (c ₂ )). (4) Melt and remove the resin. The heat-dependent detection element 4 fixed to the frame 1 shown in FIG. 5C is removed by dissolving the resin 16 with an organic solvent that dissolves only the acrylic resin 16 without dissolving the adhesive material with the frame 1 (see FIG. 5 (d ₁ ) (d ₂ )), the heat-dependent detection element 4 fixed to the frame 1 is obtained.

According to this manufacturing method, the resin 16 is embedded and fixed in the gap portion 15, and then, together with the resin 16 portion,
Since each heat-dependent detection element 4 is separated, the cutting time is shortened and the resin is melted without applying an external force, so that the heat-dependent detection element 4 is protected in the same manner as when the protective outer frame 13 is provided, Moreover, it can be manufactured at low cost.

[0035]

As is apparent from the above description, the present invention has the following effects. (1) Effect corresponding to claim 1: The thermal dependency detecting element is provided on the free end side of a position far from the one side of the substrate fixedly supported by the frame having a large heat capacity, and the substrate of the portion of the thermal dependency detecting element Since the insulating film is removed and only the insulating film is used, the heat capacity is small and the physical quantity of the measured object according to the environmental temperature can be detected with good response. (2) Effect corresponding to claim 2: The same effect as claim 1 is obtained, and further, since the frame is omitted and the heat dependency detecting element is directly insulated and fixed to the lead, a low cost heat dependency detector is provided. can get. (3) Effect corresponding to claim 3: a heat-dependent detection element,
A protective outer frame having a separation groove for protecting the heat-dependent detection element is simultaneously processed, and after the processing is completed, the frame or
Since the protective outer frame is cut off after being fixed to the lead , the heat-dependent detection element is not damaged and the yield is improved. (4) Effect corresponding to claim 4: It has the same effect as claim 3, a plurality of heat-dependent detection elements are provided, and resin is provided in the gap between the heat-dependent detection elements of the substrate. After embedding and solidifying, the individual thermal dependency detecting elements are separated by including the resin portion, so that the number of cutting steps can be shortened and a low cost thermal dependency detector can be obtained.

[Brief description of drawings]

FIG. 1 is a diagram for explaining an example of a main part structure of a heat dependency detector according to the present invention.

FIG. 2 is a diagram for explaining an example in which a heat-dependent detection element is directly fixed and supported on a lead.

FIG. 3 is a plan view for explaining a method of manufacturing a heat dependence detector according to the present invention.

FIG. 4 is a diagram for explaining a cross-sectional shape of each part of FIG.

FIG. 5 is a diagram for explaining a step of another manufacturing method of the thermal dependence detector.

FIG. 6 is a configuration diagram for explaining an example of a conventional detector.

FIG. 7 is a main part configuration diagram for explaining another example of the conventional detection device.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Frame, 2 ... Substrate, 3 ... Insulating film, 4 ... Thermal dependence detection element, 5 ... Resistor pattern, 6 ... Lead, 7 ... Bonding wire, 8 ... Protective film, 9 ... Insulating layer, 10 ... Adhesion Material,
11 ... Hollow part, 12 ... Separation groove, 13 ... Protective outer frame, 1
4 ... Single substrate, 15 ... Gap, 16 ... Resin.

─────────────────────────────────────────────────── --Continued from the front page (56) References JP-A-61-191953 (JP, A) JP-A-64-35352 (JP, A) JP-A-59-143946 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) G01N 27/00-27/24 G01F 1/68-1/699 G01P 5/10-5/12 G01J 1/00-1/46

Claims (4)

(57) [Claims] 1. A substrate having an insulating film on its surface, a frame for fixing and supporting the substrate at one end side, and a heat-dependent detection element provided on the insulating film for detecting a physical quantity of an object to be measured. The heat-dependent detection element is provided on the free end side of the substrate fixed to the frame, and the substrate is not provided in a portion where the heat-dependent detection element is provided. Characterizing heat-dependent detector. 2. A substrate having an insulating film on its surface, a thermal dependence detecting element provided on the insulating film for detecting a physical quantity of an object to be measured, and connected to the thermal dependence detecting element,
The substrate has a lead which is fixedly supported on one end by insulation.
A heat-dependent detector characterized in that the substrate is not provided in a portion where the heat-dependent detection element is provided. 3. The thermal dependence detecting element is protected at the time of forming the thermal dependence detecting element from the fixing side of the substrate fixed to the frame or the lead to the free end side by a separation groove to protect the thermal dependence detecting element. 3. The thermal dependence according to claim 1 or 2, wherein a protective outer frame is provided to protect the protective frame and the frame or the lead is fixed to the heat-dependent detecting element, and then the protective outer frame is separated. method of manufacturing a detector. 4. A plurality of the heat-dependent detection elements are linearly formed on a substrate having an insulating film on the surface, and a gap generated between the formed plurality of heat-dependent detection elements is filled with a filler. After the solidification, the individual heat-dependent detection elements are separated and insulated and fixed to the frame or the lead to remove the filling material, and the production of the heat-dependent detector according to claim 1 or 2. Method.