CN115621224A - 一种无键合的双面散热模块及其制造方法 - Google Patents

一种无键合的双面散热模块及其制造方法 Download PDF

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CN115621224A
CN115621224A CN202211013798.4A CN202211013798A CN115621224A CN 115621224 A CN115621224 A CN 115621224A CN 202211013798 A CN202211013798 A CN 202211013798A CN 115621224 A CN115621224 A CN 115621224A
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孙栋
杨健明
柯攀
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Beijing Cuijin Technology Co ltd
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Abstract

本发明提供一种无键合的双面散热模块及其制造方法，包括上层基板，中间层低温共烧陶瓷基板、下层基板、功率端子和多个信号端子，其中，所述低温共烧陶瓷设有无陶瓷区，所述上层基板，中间层低温共烧陶瓷基板和下层基板焊接形成模块，所述功率端子包括正极输入端子、负极输入端子和功率输出端子，所述正极输入端子焊接在所述下层基板上，所述负极输入端子焊接在所述上层基板上，所述功率输出端子和信号端子焊接在所述中间层低温共烧陶瓷基板上，所述中间层低温共烧陶瓷基板和下层基板上均焊接有芯片和合金垫块，其在模块的封装过程中，导入了低温共烧陶瓷基板，提供了足够的强度，且低温共烧陶瓷基板内部线路可以保证产品的通流能力。

Description

一种无键合的双面散热模块及其制造方法
技术领域
本发明涉及半导体功率模块技术领域，具体涉及一种无键合的双面散热模块及其制造方法。
背景技术
随着新能源汽车等产业的不断发展，作为能量转化和传输的核心器件，功率模块的性能要求也在不断的提高。小体积、高功率密度、高性能、高可靠性是功率模块必然的发展方向。
双面散热模块有效的提高了模块的散热能力，减小了模块的体积，同时提高了模块的功率密度和性能，更进一步的立体封装如公告号CN206864452U提供的一种低寄生电感功率模块及双面散热低寄生电感功率模块，其可以在平面封装的基础上，增加多层结构，进一步减小了模块的体积，降低了寄生电感，提高了模块的性能。不过由于目前的封装设计中间层采用的是铜框架的结构，铜焊接面上下两层热容不一致的情况下，容易发生形变，导致芯片受到很大的应力，影响芯片的性能。同时目前的机构，控制信号端，尤其是芯片的栅极，主要是通过键合引线的模式引出，不仅 增加了工序，同时也增加了布局的难度。
发明内容
针对上述存在的问题，本发明提供一种可以克服上述缺陷的无键合的双面散热模块。，包括上面两层陶瓷覆铜基板和中间低温共烧陶瓷基板，解决了中间铜层容易变形的问题，同时省去了芯片控制端键合的问题。
本发明的技术解决方案是：一种无键合的双面散热模块，包括上层基板，中间层低温共烧陶瓷基板、下层基板、功率端子和多个信号端子，其中，所述低温共烧陶瓷设有无陶瓷区，所述上层基板，中间层低温共烧陶瓷基板和下层基板焊接形成模块，所述功率端子包括正极输入端子、负极输入端子和功率输出端子，所述正极输入端子焊接在所述下层基板上，所述负极输入端子焊接在所述上层基板上，所述功率输出端子和信号端子焊接在所述中间层低温共烧陶瓷基板上，所述中间层低温共烧陶瓷基板和下层基板上均焊接有芯片和合金垫块。
本发明的进一步改进在于：所述上层基板和下层基板均为陶瓷覆铜基板。
本发明的进一步改进在于：所述中间层低温共烧陶瓷基板的数量为3个，平铺设置在下层基板的上方。
本发明的进一步改进在于：所述上层基板，中间层低温共烧陶瓷基板和下层基板的焊接处涂覆有免清洗的低温锡膏。
本发明的进一步改进在于：所述模块内填充有环氧塑封料。
本发明还提供了一种无键合的双面散热模块的加工方法，具体加工步骤如下，
a.把芯片、合金垫块、正级输入端子使用焊料焊接到下层基板上；
b.把芯片、合金垫块、功率输出端子、信号端子使用焊料焊接到中间层低温共烧陶瓷基板上；
c.把负极输入端子 使用焊料焊接到上层基板上；
d.将上层基板、中间层低温共烧陶瓷基板以及下层基板的焊接处涂覆上免清洗的锡膏,把三层结构焊接到一起形成模块；
e.把模块用环氧塑封料填充，形成成品。
本发明的进一步改进在于：所述步骤a、b、c中所使用的焊料为高温焊料，所述步骤d中的锡膏采用低温锡膏。
本发明的进一步改进在于：在于：所述合金垫块为铜钼合金垫块。
本发明的有益效果是：1.在模块的封装过程中，导入了低温共烧陶瓷基板，提供了足够的强度，保证芯片不会承受高的机械应力；2.低温共烧陶瓷基板内部线路可以保证产品的通流能力，以及控制电路与主电路的绝缘强度；3.低温共烧陶瓷基板的内部电路也保证了在相同的芯片布局情况下，可以控制电路可以走相对短的路径，以达到降低模块寄生电感的作用，同时可以通过焊接的方式取代原有键合工艺，减少工艺步骤。
附图说明
图1是本发明的结构示意图；
图2、图3是本发明中下层陶瓷覆铜基板示意图；
图4、图5是本发明中中间层低温共烧陶瓷基板示意图；
图6、图7是本发明中上层陶瓷覆铜基板示意图；
其中： 1-上层陶瓷覆铜基板，2-中间层低温共烧陶瓷基板，3-下层陶瓷覆铜基板，4-信号端子，5-正极输入端子，6-负极输入端子，7-功率输出端子，8-芯片，9- 铜钼合金垫块，10-焊料，11-环氧塑封料。
具体实施方式。
为了加深对本发明的理解，下面将结合附图和实施例对本发明做进一步详细描述，该实施例仅用于解释本发明，并不对本发明的保护范围构成限定。
实施例1：
如图1，本实施例提供的一种无键合的双面散热模块，包括上层陶瓷覆铜基板1，三个中间层低温共烧陶瓷基板2、下层陶瓷覆铜基板3、功率端子和四个信号端子4，三个所述中间层低温共烧陶瓷基板3平铺设置，其中，所述低温共烧陶瓷设有无陶瓷区，所述功率端子包括正极输入端子5、负极输入端子6和功率输出端子7，所述正极输入端子5焊接在所述下层陶瓷覆铜基板3上，所述负极输入端子6焊接在所述上层陶瓷覆铜基板1上，所述功率输出端子7和四个信号端子4均焊接在所述中间层低温共烧陶瓷基板2上，所述中间层低温共烧陶瓷基板和下层基板上均焊接有芯片8和铜钼合金垫块9。所述上层陶瓷覆铜基板1，中间层低温共烧陶瓷基板2和下层陶瓷覆铜基板3通过焊料10焊接形成模块，由于模块内部的电路通过低温共烧陶瓷(由于部分位置中间无陶瓷，上下连通)使得整个回路缩短，三层基板的焊接处涂覆有免清洗的低温锡膏，所述模块内填充有环氧塑封料11。
本发明还提供了一种无键合的双面散热模块的加工方法，具体加工步骤如下，
a.把芯片、铜钼合金垫块、正级输入端子使用高温焊料（Pb92.5Sn5Ag2.5 /287℃）焊接到陶瓷覆铜下层基板上，如图2、图3；
b.把芯片、铜钼合金垫块、功率输出端子、信号端子使用高温焊料（Pb92.5Sn5Ag2.5 /287℃）焊接到中间层低温共烧陶瓷 基板上，如图4、图5；
c.把负极输入端子 使用高温焊料（Pb92.5Sn5Ag2.5 /287℃）焊接到上层陶瓷覆铜基板上，如图6、图7；
d.将上层基板、中间层低温共烧陶瓷基板以及下层基板的焊接处涂覆上免清洗的低温锡膏（SAC305/ 217℃）,把三层结构焊接到一起形成模块；
e.把模块用环氧塑封料填充，形成成品，如图1；
f. 对成品进行过程老化等质量测试。
本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和发明书中描述的只是发明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (8)

1.一种无键合的双面散热模块，其特征在于：包括上层基板，中间层低温共烧陶瓷基板、下层基板、功率端子和多个信号端子，其中，所述低温共烧陶瓷设有无陶瓷区，所述上层基板，中间层低温共烧陶瓷基板和下层基板焊接形成模块，所述功率端子包括正极输入端子、负极输入端子和功率输出端子，所述正极输入端子焊接在所述下层基板上，所述负极输入端子焊接在所述上层基板上，所述功率输出端子和信号端子焊接在所述中间层低温共烧陶瓷基板上，所述中间层低温共烧陶瓷基板和下层基板上均焊接有芯片和合金垫块。
2.根据权利要求1所述的一种无键合的双面散热模块，其特征在于：所述上层基板和下层基板均为陶瓷覆铜基板。
3.根据权利要求1所述的一种无键合的双面散热模块，其特征在于：所述中间层低温共烧陶瓷基板的数量为3个，平铺设置在下层基板的上方。
4.根据权利要求1所述的一种无键合的双面散热模块，其特征在于：所述上层基板，中间层低温共烧陶瓷基板和下层基板的焊接处涂覆有免清洗的低温锡膏。
5.根据权利要求1所述的一种无键合的双面散热模块，其特征在于：所述模块内填充有环氧塑封料。
6.根据权利要求1所述的一种无键合的双面散热模块的制造方法，其特征在于：具体加工步骤如下，
a.把芯片、合金垫块、正级输入端子使用焊料焊接到下层基板上；
b.把芯片、合金垫块、功率输出端子、信号端子使用焊料焊接到中间层低温共烧陶瓷基板上；
c.把负极输入端子 使用焊料焊接到上层基板上；
d.将上层基板、中间层低温共烧陶瓷基板以及下层基板的焊接处涂覆上免清洗的锡膏,把三层结构焊接到一起形成模块；
e.把模块用环氧塑封料填充，形成成品。
7.根据权利要求6所述的一种无键合的双面散热模块的制造方法，其特征在于：所述步骤a、b、c中所使用的焊料为高温焊料，所述步骤d中的锡膏采用低温锡膏。
8.根据权利要求6所述的一种无键合的双面散热模块的制造方法，其特征在于：所述合金垫块为铜钼合金垫块。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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