CN115603691B - Multilayer thick-film integrated numerical control attenuator and implementation method thereof - Google Patents
Multilayer thick-film integrated numerical control attenuator and implementation method thereof Download PDFInfo
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- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
- H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
- H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
- H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
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- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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Abstract
A numerical control attenuator integrated by multilayer thick films and a realization method thereof belong to the technical field of attenuators, the numerical control attenuator is arranged in a thin film circuit layer and a multilayer thick film circuit which are stacked, a sacrificial layer group consisting of two blank ceramic substrates is arranged between the thin film circuit layer and the topmost thick film circuit, a thin film substrate is arranged on the top surface of the sacrificial layer group, and the thin film circuit layer is positioned on the thin film substrate; a ceramic dielectric plate is arranged between two adjacent layers of thick film circuits; the port P1, the port P2, the port P3, the port P4, the port P5, the capacitor C1, the capacitor C2, the capacitor C3, the resistor R1, the resistor R2, the resistor R3, the PIN diode D1, the PIN diode D2, the PIN diode D3 and the PIN diode D4 are arranged on the thin film circuit layer; the inductor L1, the inductor L2, the inductor L3, the inductor L4 and the inductor L5 are arranged on a thick film circuit in the middle. The elements of the attenuator are arranged in a layered mode, different elements are grounded to different layers, and the attenuator is small in size and beneficial to heat dissipation.
Description
Technical Field
The application belongs to the technical field of attenuators, and particularly relates to a multilayer thick-film integrated numerical control attenuator and an implementation method thereof.
Background
One of the important components in phased array radar transceiver assemblies is the attenuator. As the requirements of microwave integrated circuits for size and extra loss become higher, attenuators are often added to communication devices for the purpose of gain control.
The attenuator can be divided into a numerical control attenuator and an electric-tuning attenuator in the attenuation mode. The electrically-tuned attenuator is provided with a complex adjusting control circuit, and the frequency band of the electrically-tuned attenuator is narrower; the digital control attenuator overcomes the defect, and has the advantages of wide working frequency band, excellent reflection coefficient, high attenuation accuracy, good stability, convenient control and the like. Digitally controlled attenuators control the amount of attenuation in a certain amount of attenuation steps, which generally have better matching characteristics and attenuation accuracy than analog attenuators.
Some of the common digitally controlled attenuators are implemented using PIN diode switching elements. The existing numerical control attenuator realized by PIN diode is directly arranged on a circuit board or a medium substrate in two-dimensional form, and the signal control line and the transmission line are arranged on the board, and the devices/elements of the attenuator are communicated by a bonding alloy line, an etched line and the like; in order to improve the heat dissipation effect, a ceramic medium is also adopted as a substrate in some products. However, the size of the whole attenuator is large, and the requirement of high integration for small volume cannot be met, meanwhile, when the existing implementation form is integrated in a microwave device, the problem of system heat dissipation is also brought, and if the dielectric plate is not high in processing precision and uneven in surface metal, large loss is brought to radio frequency signal transmission, and under a high-power signal, the problems of heating, ignition between radio frequency lines, dielectric breakdown and the like are brought.
Disclosure of Invention
In order to solve the defects of the prior art, the application provides a multilayer thick-film integrated numerical control attenuator and an implementation method thereof, the attenuator is implemented through a three-dimensional structure, elements of the attenuator are arranged in a layered mode, and grounding of different elements is also arranged in a layered mode, so that the attenuator is not only convenient to achieve miniaturization, but also beneficial to high-power heat dissipation, and beneficial to providing better attenuation precision.
In order to achieve the above object, the present invention employs the following techniques:
a numerical control attenuator integrated by multilayer thick films comprises a first PIN diode, a second PIN diode, a third PIN diode and a fourth PIN diode, wherein the positive terminals of the first PIN diode and the second PIN diode are connected with a radio frequency signal input port and one end of a first inductor, the negative terminal of the second PIN diode is connected with one end of a fourth inductor, one end of a second resistor and one end of a first resistor, the other end of the fourth inductor is connected with one end of a second capacitor and a second control signal port, the negative terminal of the first PIN diode is connected with one end of a second inductor and the negative terminal of the third PIN diode, the other end of the second inductor is connected with one end of a first control signal port and one end of a first capacitor, the positive terminal of the third PIN diode is connected with the positive terminal of the fourth PIN diode, one end of the third inductor and the radio frequency signal output port, the negative terminal of the fourth PIN diode is connected with the other end of the first resistor, one end of the fifth inductor, the other end of the fifth inductor is connected with one end of the third capacitor and the third control signal port, and the other end of the third inductor are all grounded;
the numerical control attenuator is arranged in a thin film circuit layer and a multilayer thick film circuit which are stacked from top to bottom, a sacrificial layer group consisting of two blank ceramic substrates is arranged between the thin film circuit layer and the 1 st thick film circuit, the top surface of the sacrificial layer group is provided with the thin film substrate, and the thin film circuit layer is positioned on the thin film substrate; a ceramic dielectric plate is arranged between two adjacent layers of thick film circuits;
the radio frequency signal input port, the first control signal port, the radio frequency signal output port, the second control signal port, the third control signal port, the first capacitor, the second capacitor, the third capacitor, the first resistor, the second resistor, the third resistor, the first PIN diode, the second PIN diode, the third PIN diode and the fourth PIN diode are arranged on the thin film circuit layer;
the first inductor, the second inductor, the third inductor, the fourth inductor and the fifth inductor are arranged on the thick film circuit in the middle;
the bottom surface of the lowest thick film circuit is provided with a molybdenum-copper metal layer, and a plurality of heat dissipation holes are arranged from the thin film circuit layer to the molybdenum-copper metal layer in a penetrating way. The molybdenum-copper metal layer is connected to the metal shell of the numerical control attenuator.
Furthermore, the grounding of the first inductor, the grounding of the third inductor, the grounding of the first capacitor, the second capacitor and the third capacitor, the grounding of the second resistor and the grounding of the third resistor are respectively connected to the middle film circuit with different thicknesses through the conducting through holes, and other connecting ends of the first inductor and the third inductor and two ends of the second inductor, the fourth inductor and the fifth inductor are respectively connected to the film circuit layer through the conducting through holes.
Further, a radio frequency transmission line is arranged on the thin film circuit layer, and the radio frequency signal input port and the radio frequency signal output port are respectively connected to different radio frequency transmission lines.
Furthermore, signal control lines are laid on the other layer of thick film circuit in the middle, and the first control signal port, the second control signal port and the third control signal port are connected to different signal control lines through the through via holes respectively.
A method for realizing a multilayer thick-film integrated numerical control attenuator comprises the following steps:
s100, providing 2 blank ceramic substrates, bonding the blank ceramic substrates together to form a sacrificial layer group, arranging a thin film substrate on the top surface of the sacrificial layer group, processing a thin film circuit layer on the top surface of the thin film substrate to obtain a surface layer group, and processing a through hole and a radiating hole on the surface layer group;
s200, a radio frequency signal input port, a first control signal port, a radio frequency signal output port, a second control signal port, a third control signal port, a first capacitor, a second capacitor, a third capacitor, a first resistor, a second resistor, a third resistor, a first PIN diode, a second PIN diode, a third PIN diode and a fourth PIN diode are arranged on the thin film circuit layer, so that the positive terminals of the first PIN diode and the second PIN diode are connected with the radio frequency signal input port, the negative terminal of the second PIN diode is connected with one end of the second resistor and one end of the first resistor, the negative terminal of the first PIN diode is connected with the negative terminal of the third PIN diode, the positive terminal of the third PIN diode is connected with the positive terminal of the fourth PIN diode and the radio frequency signal output port, and the negative terminal of the fourth PIN diode is connected with the other end of the first resistor and one end of the third resistor;
s300, providing 4 ceramic dielectric slabs, processing thick film circuit layers on the top surfaces of the ceramic dielectric slabs, namely, a 1 st thick film circuit, a 2 nd thick film circuit, a 3 rd thick film circuit and a 4 th thick film circuit in sequence, processing a 5 th thick film circuit on the bottom surface of the ceramic dielectric slab where the 4 th thick film circuit is located, and processing corresponding through holes and heat dissipation holes according to design requirements;
s400, arranging a first inductor, a second inductor, a third inductor, a fourth inductor and a fifth inductor on a 4 th thick film circuit;
s500, providing a molybdenum-copper metal layer;
s600, overlapping the ceramic dielectric plates of the 1 st thick film circuit, the 2 nd thick film circuit, the 3 rd thick film circuit and the 4 th thick film circuit in a top-down sequence, assembling the surface layer on the 1 st thick film circuit, overlapping the molybdenum copper metal under the 5 th thick film circuit in an aligning manner with the corresponding through holes and the heat dissipation holes, and sintering at a low temperature for forming;
after the forming, the first inductor, the grounding of the third inductor, the first capacitor, the second capacitor, the grounding of the third capacitor, the second resistor, the grounding of the third resistor are connected to the middle different-layer-thickness film circuit through the conducting through holes respectively, the two ends of the first inductor, the other connecting ends of the third inductor, the second inductor, the fourth inductor and the fifth inductor are connected to the thin film circuit layer through the conducting through holes respectively, so that the first PIN diode and the second PIN diode are connected with one end of the first inductor at the positive end, the second PIN diode is connected with one end of the fourth inductor at the negative end, the fourth inductor is connected with one end of the second capacitor and the second control signal port at the other end, the first PIN diode is connected with one end of the second inductor at the negative end, the second inductor is connected with one end of the first control signal port and one end of the first capacitor at the other end, the third PIN diode is connected with one end of the third inductor and the radio frequency signal output port at the positive end, the fourth PIN diode D4 is connected with one end of the fifth inductor at the other end, and the third inductor is connected with one end and the third control signal port.
The invention has the beneficial effects that:
1. the numerical control attenuator is realized in a three-dimensional mode and is realized by combining a thin film process and a thick film process, the inductors and the signal control lines are distributed on different internal thick film layers, the grounding of different devices is connected to different internal layers through conducting through holes, a molybdenum copper layer is additionally arranged on the bottom surface to be connected with the metal shell, and heat dissipation holes penetrating the whole are arranged, so that the size and the volume of the whole can be reduced, the conduction of high-power heat dissipation to each layer is facilitated, and the connection stability with the metal shell is facilitated;
2. the two blank ceramic substrates are used as sacrificial layer groups and are subjected to polishing, burnishing and the like to obtain a flat surface, the thin film substrate is arranged on the flat surface, and then the thin film circuit layer is processed on the thin film substrate, so that the flatness of the thin film circuit layer can be ensured, the problems of deformation and the like possibly occurring in the thick film firing process can be solved, meanwhile, the thin film circuit layer is utilized to conveniently process a more accurate circuit, a resistance can be directly processed on the thin film circuit layer in a titanium tungsten molecule sputtering mode, the compactness, the precision and the power bearing of the resistance are improved, meanwhile, the uniform layout can be more flexibly realized, and the precision of the attenuator is further improved;
3. the problems of low processing precision and large loss of a radio frequency signal transmission agent caused by uneven surface existing in a single-layer thick film ceramic plate form are solved; the radio frequency lines and the control lines are arranged in a layered mode, and related connection is achieved through the through holes, so that the problems of heating, ignition among the radio frequency lines, dielectric breakdown and the like caused by high-power signals are solved.
Drawings
FIG. 1 is a diagram of a basic circuit structure of a digitally controlled attenuator according to an embodiment of the present application.
FIG. 2 is an exploded view of a layout of a digitally controlled attenuator in an embodiment of the present application in a multi-layer thick film circuit.
Fig. 3 is a schematic diagram of devices laid out on a thin film circuit layer according to an embodiment of the present application.
Fig. 4 is an exploded view of a thin film circuit layer to a 4 th thick film circuit according to an embodiment of the present application.
Reference numerals: 10-thin film circuit layer, 11-1 st thick film circuit, 12-2 nd thick film circuit, 13-3 rd thick film circuit, 14-4 th thick film circuit, 15-5 th thick film circuit, 21-thin film substrate, 22-sacrificial layer group, 3-ceramic dielectric plate, 4-molybdenum-copper metal layer, 51-radio frequency transmission line, 52-signal control line, 6-radiating hole, D1-first PIN diode, D2-second PIN diode, D3-third PIN diode, D4-fourth PIN diode, C1-first capacitor, C2-second capacitor, C3-third capacitor, R1-first resistor, R2-second resistor, R3-third resistor, L1-first inductor, L2-second inductor, L3-third inductor, L4-fourth inductor, L5-fifth inductor, P1-radio frequency signal input port, P2-first control signal port, P3-radio frequency signal output port, P4-second control signal port, and P5-third control signal port.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings, but the described embodiments of the present invention are a part of the embodiments of the present invention, not all of the embodiments of the present invention.
In the numerical control attenuator integrated by multilayer thick film of the embodiment of the application, a PIN diode assembly is adopted for one-way connection, as shown in fig. 1, the circuit comprises a first PIN diode D1, a second PIN diode D2, a third PIN diode D3 and a fourth PIN diode D4, the positive terminals of the first PIN diode D1 and the second PIN diode D2 are connected with a radio frequency signal input port P1 and one end of a first inductor L1, the negative terminal of the second PIN diode D2 is connected with one end of a fourth inductor L4, one end of a second resistor R2 and one end of a first resistor R1, the other end of the fourth inductor L4 is connected with one end of a second capacitor C2 and a second control signal port P4, the negative terminal of the first PIN diode D1 is connected with one end of the second inductor L2 and the negative terminal of the third PIN diode D3, the other end of the second inductor L2 is connected with a first control signal port P2 and one end of a first capacitor C1, the positive end of the third PIN diode D3 is connected with the positive end of the fourth PIN diode D4, one end of the third inductor L3 and a radio-frequency signal output port P3, the negative end of the fourth PIN diode D4 is connected with the other end of a first resistor R1, one end of the third resistor R3 and one end of a fifth inductor L5, the other end of the fifth inductor L5 is connected with one end of the third capacitor C3 and the third control signal port P5, the first inductor L1, the third inductor L3, the first capacitor C1, the second capacitor C2, the third capacitor C3, the second resistor R2 and the other end of the third resistor R3 are all grounded.
A radio-frequency signal is input from a radio-frequency signal input port P1, if a first control signal port P2 is applied with negative voltage, a second control signal port P4 and a third control signal port P5 are applied with positive voltage, a first PIN diode D1 and a third PIN diode D3 are conducted, and the radio-frequency signal is output from a radio-frequency signal output port P3; if a positive voltage is applied to the first control signal port P2, a negative voltage is applied to the second control signal port P4 and the third control signal port P5, the second PIN diode D2 and the fourth PIN diode D4 are conducted, signals enter from the port of the radio-frequency signal input port P1, enter a pi-type attenuation network formed by the first resistor R1, the second resistor R2 and the third resistor R3 through the second PIN diode D2, and are output to the radio-frequency signal output port P3 through the fourth PIN diode D4. The values of the first resistor R1, the second resistor R2 and the third resistor R3 of the pi-type attenuation network determine the attenuation amount. By connecting several basic circuits in series, a numerical control attenuator with a plurality of attenuation bits and a certain step can be realized.
In this embodiment, as shown in fig. 2 to 3, the above-mentioned digital controlled attenuator is disposed in a thin film circuit layer 10 and a thin film circuit layer 5 which are stacked from top to bottom. The 5-layer thick film circuit is sequentially provided with a 1 st-layer thick film circuit 11, a 2 nd-layer thick film circuit 12, a 3 rd-layer thick film circuit 13, a 4 th-layer thick film circuit 14 and a 5 th-layer thick film circuit 15 from top to bottom.
A sacrificial layer group 22 composed of two blank ceramic substrates is arranged between the thin film circuit layer 10 and the 1 st thick film circuit 11, a thin film substrate 21 is arranged on the top surface of the sacrificial layer group 22, and the thin film circuit layer 10 is positioned on the thin film substrate 21; a ceramic dielectric plate 3 is arranged between two adjacent layers of thick film circuits.
The radio frequency transmission line 51, the radio frequency signal input port P1, the first control signal port P2, the radio frequency signal output port P3, the second control signal port P4, the third control signal port P5, the first capacitor C1, the second capacitor C2, the third capacitor C3, the first resistor R1, the second resistor R2, the third resistor R3, the first PIN diode D1, the second PIN diode D2, the third PIN diode D3, and the fourth PIN diode D4 are laid out on the thin film circuit layer 10. The rf signal input port P1 and the rf signal output port P3 are connected to different rf transmission lines 51, respectively.
The 2 nd thick film circuit 12 is laid with signal control lines 52, and the first control signal port P2, the second control signal port P4, and the third control signal port P5 are connected to different signal control lines 52 through via holes.
The first inductor L1, the second inductor L2, the third inductor L3, the fourth inductor L4, and the fifth inductor L5 are disposed on the 4 th thick film circuit 14.
The bottom surface of the lowest thick film circuit, namely the bottom surface of the 5 th thick film circuit 15 is provided with a molybdenum-copper metal layer 4, and a plurality of heat dissipation holes 6 are arranged from the thin film circuit layer 10 to the molybdenum-copper metal layer 4 in a penetrating way. The molybdenum-copper metal layer 4 is connected to the metal casing.
The grounding of the second resistor R2 and the grounding of the third resistor R3 are connected to the 1 st thick film circuit 11 through the through via holes; grounding ends of the first inductor L1 and the third inductor L3 are connected to the 3 rd thick film circuit 13 through conducting through holes, other connecting ends of the first inductor L1 and the third inductor L3 and two ends of the second inductor L2, the fourth inductor L4 and the fifth inductor L5 are connected to the thin film circuit layer 10 through conducting through holes respectively, and grounding ends of the first capacitor C1, the second capacitor C2 and the third capacitor C3 are connected to the 3 rd thick film circuit 13 through conducting through holes.
Because the thick film circuit layer is made of tungsten material and has different thermal expansion coefficient with an external metal shell, the thick film circuit layer can not be directly connected well, and a molybdenum-copper metal layer 4 is added at the bottommost part, not only has the function of heat dissipation, but also can be connected with the shell well.
In the embodiment, a two-dimensional circuit is changed into a three-dimensional circuit, the first inductor L1, the second inductor L2, the third inductor L3, the fourth inductor L4, the fifth inductor L5 and the signal control line 52 are directly arranged on different internal thick film circuit layers through a thick film process, the thin film circuit layer 10 is adopted on the surface layer, and the resistors are directly arranged on the thin film circuit layer 10 in a molecular sputtering mode. In addition, PIN diodes, capacitors and radio frequency transmission lines 51 are arranged on the thin film circuit layer 10. The connections between the layers are made through metallized vias.
In the embodiment, the ceramic dielectric plate and the ceramic substrate are made of ALN materials, so that the ceramic dielectric plate and the ceramic substrate have the characteristics of high relative dielectric constant, good heat conduction performance and the like, and are beneficial to miniaturization of a system and meeting the requirement of high-power heat dissipation.
In this embodiment, the method for implementing the multi-layer thick film integrated numerical control attenuator includes the following steps:
s100, providing 2 blank ceramic substrates, bonding the blank ceramic substrates together to form a sacrificial layer group 22, arranging a thin film substrate 21 on the top surface of the sacrificial layer group 22, processing a thin film circuit layer 10 on the top surface of the thin film substrate 21 to obtain a surface layer group, and processing a through hole and a heat dissipation hole 6 on the surface layer group.
Specifically, the surface of the sacrificial layer group 22 is thinned, polished, and polished to be a flat surface, a thin film substrate 21 is formed on the flat surface, and the thin film circuit layer 10 is formed on the thin film substrate 21 by a thin film plating method.
S200, a radio-frequency signal input port P1, a first control signal port P2, a radio-frequency signal output port P3, a second control signal port P4, a third control signal port P5, a first capacitor C1, a second capacitor C2, a third capacitor C3, a first resistor R1, a second resistor R2, a third resistor R3, a first PIN diode D1, a second PIN diode D2, a third PIN diode D3 and a fourth PIN diode D4 are arranged on the thin film circuit layer 10, so that the positive terminals of the first PIN diode D1 and the second PIN diode D2 are connected with the radio-frequency signal input port P1, the negative terminal of the second PIN diode D2 is connected with one end of the second resistor R2 and one end of the first resistor R1, the negative terminal of the first PIN diode D1 is connected with the negative terminal of the third PIN diode D3, the positive terminal of the third PIN diode D3 is connected with the positive terminal of the fourth PIN diode D4 and the radio-frequency signal output port P3, the negative terminal of the fourth PIN diode D4 is connected with the other end of the first resistor R1 and the third resistor R3; the thin film circuit layer 10 is provided with a radio frequency transmission line 51, and the radio frequency signal input port P1 and the radio frequency signal output port P3 are respectively connected to different radio frequency transmission lines 51.
The attenuator requires high precision of the attenuation resistor, and when the attenuator is implemented, the first resistor R1, the second resistor R2 and the third resistor R3 are directly processed on the thin film circuit layer 10 by using a titanium tungsten molecule sputtering mode, so that the resistors processed by the acting force among molecules have the characteristics of high density, uniform distribution and high precision.
S300, providing 4 ceramic dielectric plates 3, respectively processing thick film circuit layers on the top surfaces, wherein the thick film circuit layers are made of tungsten, the thick film circuit layers are sequentially a 1 st thick film circuit 11, a 2 nd thick film circuit 12, a 3 rd thick film circuit 13 and a 4 th thick film circuit 14, a 5 th thick film circuit 15 is processed on the bottom surface of the ceramic dielectric plate 3 where the 4 th thick film circuit 14 is located, and corresponding through holes and heat dissipation holes 6 are processed according to design requirements.
S400, arranging a first inductor L1, a second inductor L2, a third inductor L3, a fourth inductor L4 and a fifth inductor L5 on the 4 th thick film circuit 14; the signal control line 52 is provided on the 2 nd thick film circuit 12.
S500, providing a molybdenum-copper metal layer 4.
S600, overlapping the ceramic dielectric plate 3 where the 1 st thick film circuit 11, the 2 nd thick film circuit 12, the 3 rd thick film circuit 13 and the 4 th thick film circuit 14 are located in a top-down sequence, assembling a surface layer on the 1 st thick film circuit 11, overlapping the molybdenum-copper metal layer 4 below the 5 th thick film circuit 15, aligning the corresponding through holes and the heat dissipation holes 6, and sintering at a low temperature for forming.
After the forming, the grounding of the first inductor L1, the grounding of the third inductor L3, the grounding of the first capacitor C1, the second capacitor C2 and the third capacitor C3, the grounding of the second resistor R2 and the third resistor R3 are respectively connected to the middle circuit with different layer thickness films through the conducting through holes, other connecting ends of the first inductor L1 and the third inductor L3 and two ends of the second inductor L2, the fourth inductor L4 and the fifth inductor L5 are respectively connected to the thin film circuit layer 10 through the conducting through holes, so that the positive ends of the first PIN diode D1 and the second PIN diode D2 are connected with one end of the first inductor L1, the negative end of the second PIN diode D2 is connected with one end of the fourth inductor L4, the other end of the fourth inductor L4 is connected to one end of the second capacitor C2 and the second control signal port P4, the negative end of the first PIN diode D1 is connected to one end of the second inductor L2, the other end of the second inductor L2 is connected to one end of the first control signal port P2 and one end of the first capacitor C1, the positive end of the third PIN diode D3 is connected to one end of the third inductor L3 and the radio frequency signal output port P3, the negative end of the fourth PIN diode D4 is connected to one end of the fifth inductor L5, the other end of the fifth inductor L5 is connected to one end of the third capacitor C3 and the third control signal port P5, and the first control signal port P2, the second control signal port P4 and the third control signal port P5 are respectively connected to different signal control lines 52 through conducting through holes.
In the embodiment, the ceramic substrate layer of the sacrificial layer group 22 is processed into a flat surface through grinding, polishing and the like, then the ALN thin film substrate 21 is processed on the flat surface, and then the thin film metal layer is plated on the surface of the thin film substrate 21 to obtain the thin film circuit layer 10, so that the flat surface is ensured, and the problems that the transmission of radio frequency signals is greatly lost due to the uneven metal on the surface of a thick film, heating, ignition among radio frequency lines, dielectric breakdown and the like are caused under high-power signals can be solved; meanwhile, high-precision processing of the film process is guaranteed, and the requirement of miniaturization can be met.
It should be noted that the sequence numbers of the steps in the method are only used for representing an example of a sequence, and are not used as the only way for limiting the sequence, and in some embodiments, the final implementation of the scheme is not affected by the fact that the order of implementing some steps of the method is exchanged within the control range of a person skilled in the art.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and it is apparent that those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application.
Claims (10)
1. A multilayer thick-film integrated numerical control attenuator is characterized in that:
the circuit of the numerical control attenuator comprises a first PIN diode (D1), a second PIN diode (D2), a third PIN diode (D3) and a fourth PIN diode (D4), wherein the positive ends of the first PIN diode (D1) and the second PIN diode (D2) are connected with a radio frequency signal input port (P1) and one end of a first inductor (L1), the negative end of the second PIN diode (D2) is connected with a fourth inductor (L4), a second resistor (R2) and one end of a first resistor (R1), the other end of the fourth inductor (L4) is connected with one end of a second capacitor (C2) and a second control signal port (P4), the negative end of the first PIN diode (D1) is connected with one end of the second inductor (L2) and the negative end of the third PIN diode (D3), the other end of the second inductor (L2) is connected with one end of a first control signal port (P2) and one end of a first capacitor (C1), the positive end of the third PIN diode (D3) is connected with the positive end of the fourth PIN diode (D4), one end of the third inductor (L3) and the radio-frequency signal output port (P3), the negative end of the fourth PIN diode (D4) is connected with the third resistor (R3), one end of the fifth inductor (L5) is connected with the other end of the first resistor (R1), the other end of the fifth inductor (L5) is connected with one end of the third capacitor (C3) and the third control signal port (P5), the first inductor (L1), the third inductor (L3) and the third control signal port (P3), the other ends of the first capacitor (C1), the second capacitor (C2), the third capacitor (C3), the second resistor (R2) and the third resistor (R3) are all grounded;
the numerical control attenuator is arranged in a thin film circuit layer (10) and a multilayer thick film circuit which are stacked from top to bottom, a sacrificial layer group (22) consisting of two blank ceramic substrates is arranged between the thin film circuit layer (10) and the topmost thick film circuit, a thin film substrate (21) is arranged on the top surface of the sacrificial layer group (22), and the thin film circuit layer (10) is positioned on the thin film substrate (21); a ceramic dielectric plate (3) is arranged between two adjacent layers of thick film circuits;
all the ports, the capacitors, the resistors and the PIN diodes are distributed on the thin film circuit layer (10);
all inductors are distributed on the thick film circuit in the middle;
the bottom surface of the undermost thick film circuit is provided with a molybdenum-copper metal layer (4), and a plurality of heat dissipation holes (6) are arranged from the thin film circuit layer (10) to the molybdenum-copper metal layer (4) in a penetrating way.
2. The multi-layer thick-film integrated numerical control attenuator according to claim 1, wherein the ground of the first inductor (L1), the ground of the third inductor (L3), the ground of the first capacitor (C1), the second capacitor (C2), and the ground of the third capacitor (C3), the ground of the second resistor (R2), and the ground of the third resistor (R3) are respectively connected to different middle layer thickness film circuits through via holes, and other connection ends of the first inductor (L1), the third inductor (L3), and two ends of the second inductor (L2), the fourth inductor (L4), and the fifth inductor (L5) are respectively connected to the thin film circuit layer (10) through via holes.
3. The digitally controlled attenuator of claim 1, wherein the thin film circuit layer (10) has a radio frequency transmission line (51) disposed thereon, and the radio frequency signal input port (P1) and the radio frequency signal output port (P3) are respectively connected to different radio frequency transmission lines (51).
4. The multilayer thick-film integrated numerical control attenuator according to claim 1, wherein the thick-film circuit has 5 layers, the grounding of the second resistor (R2) and the third resistor (R3) is connected to the 1 st thick-film circuit (11) through a via hole, the grounding ends of the first inductor (L1), the second inductor (L2), the third inductor (L3), the fourth inductor (L4) and the fifth inductor (L5) are arranged on the 4 th thick-film circuit (14), the grounding ends of the first inductor (L1) and the third inductor (L3) are connected to the 3 rd thick-film circuit (13) through via holes, the other connecting ends of the first inductor (L1) and the third inductor (L3) and the two ends of the second inductor (L2), the fourth inductor (L4) and the fifth inductor (L5) are respectively connected to the thin-film circuit layer (10) through via holes, and the grounding ends of the first capacitor (C1), the second capacitor (C2) and the third capacitor (C3) are connected to the 3 rd thick-film circuit (13) through via holes.
5. The digitally controlled attenuator of claim 4, wherein the 2 nd thick film circuit (12) has signal control lines (52) disposed thereon, and the first control signal port (P2), the second control signal port (P4), and the third control signal port (P5) are connected to different signal control lines (52) through via holes.
6. The multilayer thick-film integrated digitally controlled attenuator according to claim 1, characterised in that the first resistor (R1), the second resistor (R2) and the third resistor (R3) form a pi-type attenuation network.
7. A method for realizing a multilayer thick-film integrated numerical control attenuator is characterized by comprising the following steps:
s100, providing 2 blank ceramic substrates, bonding the blank ceramic substrates together to form a sacrificial layer group (22), arranging a thin film substrate (21) on the top surface of the sacrificial layer group (22), processing a thin film circuit layer (10) on the top surface of the thin film substrate (21), obtaining a surface layer group, and processing a through hole and a heat dissipation hole (6) on the surface layer group;
s200, a radio frequency signal input port (P1), a radio frequency signal output port (P3), a first control signal port (P2), a second control signal port (P4), a third control signal port (P5), a first capacitor (C1), a second capacitor (C2), a third capacitor (C3), a first resistor (R1), a second resistor (R2), a third resistor (R3), a first PIN diode (D1), a second PIN diode (D2), a third PIN diode (D3) and a fourth PIN diode (D4) are arranged on a thin film circuit layer (10), so that the positive terminals of the first PIN diode (D1) and the second PIN diode (D2) are connected with the radio frequency signal input port (P1), the negative terminal of the second PIN diode (D2) is connected with one end of the second resistor (R2), one end of the first resistor (PIN R1), the negative terminal of the first PIN diode (D1) is connected with the negative terminal of the third PIN diode (D3), the positive terminal of the third PIN diode (D3) is connected with the fourth positive terminal (P4), and the other end of the fourth PIN diode (R3) is connected with the positive terminal of the third PIN diode (R3);
s300, providing 4 ceramic dielectric slabs (3), respectively processing thick film circuit layers on the top surfaces, sequentially processing a 1 st thick film circuit (11), a 2 nd thick film circuit (12), a 3 rd thick film circuit (13) and a 4 th thick film circuit (14), processing a 5 th thick film circuit (15) on the bottom surface of the ceramic dielectric slab (3) where the 4 th thick film circuit (14) is located, and processing corresponding through holes and heat dissipation holes (6) according to design requirements;
s400, arranging a first inductor (L1), a second inductor (L2), a third inductor (L3), a fourth inductor (L4) and a fifth inductor (L5) on a 4 th thick film circuit (14);
s500, providing a molybdenum-copper metal layer (4);
s600, laminating the ceramic dielectric plates (3) where the 1 st thick film circuit (11), the 2 nd thick film circuit (12), the 3 rd thick film circuit (13) and the 4 th thick film circuit (14) are positioned in a top-down sequence, assembling a surface layer on the 1 st thick film circuit (11), laminating a molybdenum-copper metal layer (4) under the 5 th thick film circuit (15), aligning the corresponding through holes and the heat dissipation holes (6), and sintering at a low temperature for forming;
after the forming, the grounding of the first inductor (L1), the grounding of the third inductor (L3), the grounding of the first capacitor (C1), the second capacitor (C2) and the third capacitor (C3), the grounding of the second resistor (R2) and the grounding of the third resistor (R3) are respectively connected to different layer thickness film circuits in the middle through conducting through holes, other connecting ends of the first inductor (L1) and the third inductor (L3) and two ends of the second inductor (L2), the fourth inductor (L4) and the fifth inductor (L5) are respectively connected to the thin film circuit layer (10) through conducting through holes, the positive end of the first PIN diode (D1) and the positive end of the second PIN diode (D2) are connected with one end of a first inductor (L1), the negative end of the second PIN diode (D2) is connected with one end of a fourth inductor (L4), the other end of the fourth inductor (L4) is connected with one end of a second capacitor (C2) and one end of a second control signal port (P4), the negative end of the first PIN diode (D1) is connected with one end of the second inductor (L2), the other end of the second inductor (L2) is connected with one end of a first control signal port (P2) and one end of a first capacitor (C1), the positive end of the third PIN diode (D3) is connected with one end of a third inductor (L3) and a radio-frequency signal output port (P3), the negative end of the fourth PIN diode (D4) is connected with one end of a fifth inductor (L5), and the other end of the fifth inductor (L5) is connected with one end of the third capacitor (C3) and the third control signal port (P5).
8. The method for implementing the multi-layer thick-film integrated numerical control attenuator according to claim 7, wherein in step S300, after the thick film circuit layer is processed, a signal control line (52) is further disposed on the 2 nd thick film circuit (12), and after the thick film circuit layer is formed, the first control signal port (P2), the second control signal port (P4), and the third control signal port (P5) are respectively connected to different signal control lines (52) through via holes.
9. The method for implementing a multi-layer thick-film integrated numerical control attenuator according to claim 7, wherein in step S100, after the thin film circuit layer (10) is processed, a radio frequency transmission line (51) is further disposed on the thin film circuit layer (10), and the radio frequency signal input port (P1) and the radio frequency signal output port (P3) are respectively connected to different radio frequency transmission lines (51).
10. The method for implementing the multi-layer thick-film integrated numerical control attenuator according to claim 7, wherein in step S100, the surface of the sacrificial layer group (22) is thinned, ground and polished to be a flat surface, the thin film substrate (21) is formed on the flat surface, and the thin film circuit layer (10) is formed on the thin film substrate (21) by a film plating method.
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| CN115776763B (en) * | 2023-02-13 | 2023-05-05 | 四川斯艾普电子科技有限公司 | Balanced type amplitude limiting field amplifier for thick film circuit substrate |
| CN115866936B (en) * | 2023-03-01 | 2023-05-30 | 四川斯艾普电子科技有限公司 | Method for realizing multilayer circuit board by adopting thick film technology |
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