CN115776763B - Balanced type amplitude limiting field amplifier for thick film circuit substrate - Google Patents
Balanced type amplitude limiting field amplifier for thick film circuit substrate Download PDFInfo
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- CN115776763B CN115776763B CN202310103056.9A CN202310103056A CN115776763B CN 115776763 B CN115776763 B CN 115776763B CN 202310103056 A CN202310103056 A CN 202310103056A CN 115776763 B CN115776763 B CN 115776763B
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Abstract
The application provides a balanced type amplitude limiting field of thick film circuit substrate is put, include: the first substrate, the second substrate, the third substrate, the fourth substrate and the fifth substrate are sequentially overlapped from top to bottom, and finally the integrated multi-layer circuit board is formed through firing. The top surface of the first substrate is provided with a first metal layer by adopting a thin film process, and the first metal layer is used for processing an electric bridge, a radio frequency circuit and placing components. The top surface of the second substrate is provided with a second metal layer for processing the radio frequency signal grounding layer. And a third metal layer is formed on the top surface of the third substrate and is used for processing low-frequency feed circuits such as a working state control wire, a power supply control wire and the like. The top surface of the fourth substrate is provided with a fourth metal layer for processing the public grounding plate. The top surface of the fifth substrate is provided with a fifth metal layer for processing the radio frequency signal transmission line. The bottom surface of the fifth substrate is provided with a sixth metal layer for processing the public grounding plate. The number of wiring layers can be effectively reduced, and the product volume is further reduced.
Description
Technical Field
The invention belongs to the technical field of microwave communication, and particularly relates to a balanced limiting field amplifier of a thick film circuit substrate.
Background
The amplitude limiting field amplifier is a key device of the radar receiving front end, and the amplitude limiter can attenuate and protect a rear-stage power sensitive device when the amplitude limiter is high in power, and low in insertion loss when the amplitude limiter is low in signal passing. As microwave devices are being miniaturized and highly integrated. The integration level and miniaturization requirements for limiting field emission are increasing.
The balanced limiting field emission means: and the input end of the amplitude limiting field amplifier uses a 90-degree electric bridge to carry out power division on input power, an amplitude limiter and a low-noise amplifier circuit are respectively designed on two branches after the power division, and then the signals after the low-noise amplifier are synthesized by using the 90-degree electric bridge. In the balanced limiting field emission, in order to realize the requirements of high integration and miniaturization, a land bridge can be selected for design, the land bridge has higher requirements on circuit processing precision, and a thin film process is needed for circuit processing; other radio frequency circuits are also in limited field amplification, as well as a large number of low frequency supplies.
The prior art realizes the wiring of the radio frequency and the low frequency, and the size of the product becomes large to meet the electromagnetic compatibility of the product. The traditional design method only uses a single process to process the printed board, and cannot achieve the processing precision and the multilayer wiring. This makes integration and miniaturization of the balanced limiting field emission less than optimal.
The traditional circuit board only adopts thick film technology or thin film technology to design the printed board. The thick film technology can be used for designing a multi-layer circuit, but direct processing of a land bridge cannot be realized, after an independent land bridge printed board is processed by using the thin film technology, the land bridge printed board is sintered on the thick film printed board, the technology is complex, and the height difference exists; when the thin film process design is adopted, although a land bridge and a radio frequency transmission line with higher precision can be processed, multi-layer circuit wiring cannot be realized, the working state control line, the power line and the like need to be arranged on the same plane, and the circuit area is still large after the circuit is tiled in consideration of the problems of high-frequency signal crosstalk, low-frequency signal crosstalk and the like. Therefore, the conventional design method cannot meet the requirement of miniaturization of the limiting field amplifier.
Disclosure of Invention
In order to solve the defects in the prior art, the invention provides a balanced limiting field of a thick film circuit substrate, and a multilayer circuit is formed on a printed board by simultaneously using a thick film process and a thin film process, so that the number of wiring layers can be effectively reduced, and the volume of a product is further reduced.
In order to achieve the object of the invention, the following scheme is adopted:
a thick film circuit substrate balanced clipping field emission, comprising: the first substrate, the second substrate, the third substrate, the fourth substrate and the fifth substrate are sequentially overlapped from top to bottom.
The top surface of the first substrate is provided with a first electric bridge, a second electric bridge, a radio frequency circuit and a placement component by adopting a thin film technology to prepare a first metal layer.
The top surface of the second substrate is provided with a second metal layer by adopting a thick film process, and the second metal layer is provided with a radio frequency signal grounding layer.
The top surface of the third substrate is provided with a third metal layer by adopting a thick film process, and the third metal layer is provided with a low-frequency feed circuit which comprises a working state control wire, a power supply control wire and the like.
And preparing a fourth metal layer on the top surface of the fourth substrate by adopting a thick film process, wherein the fourth metal layer is provided with a public grounding plate.
And preparing a fifth metal layer on the top surface of the fifth substrate by adopting a thick film process, wherein the fifth metal layer is provided with a radio frequency signal transmission line.
And preparing a sixth metal layer on the bottom surface of the fifth substrate by adopting a thick film process, wherein the sixth metal layer is provided with a public grounding plate.
Further, the first substrate, the second substrate, the third substrate, the fourth substrate and the fifth substrate are all made of ceramics.
Further, the first metal layer is connected with the power control line of the third metal layer through the metal via hole.
Further, the transmission line of the grounding circuit part in the first metal layer is connected with the radio frequency signal transmission line of the fifth metal layer through the metal via hole.
Further, the radio frequency signal grounding layer of the second metal layer, the fourth metal layer public grounding plate, the fifth metal layer public grounding plate and the sixth metal layer public grounding plate in the first metal layer are all connected through the connection.
Further, the fifth metal layer is used for transmitting the radio frequency transmission signal subjected to the amplitude limiting field emission.
The invention has the beneficial effects that:
1. the circuit on the first metal layer adopts a thin film process design, so that the processing of a land bridge can be realized, the size of the circuit is greatly reduced, and compared with the traditional branch line bridge, the size of the land bridge can be reduced by more than 60%. The first metal layer adopts a thin film process to design the radio frequency circuit, the circuit precision is high, and the electrical performance index, the batch consistency and the like of the circuit are superior to those of the thick film circuit. The first metal layer adopts a thin film technology to design a radio frequency circuit, the circuit precision is high, the circuit edge is neat, burrs are few, the situation of discharging the product to the ground under high power can be reduced, and the power bearing capacity of the limiter is improved.
2. The processing of the multi-layer circuit can be realized by adopting a low-frequency circuit with low requirements on thick film process design precision and a simple radio frequency transmission line, and the circuit size is greatly reduced. The multi-layer circuit is designed by adopting a thick film process, and the radio frequency circuit and the low frequency circuit are isolated by adopting a stratum, so that the problem of crosstalk between high frequency and low frequency of a product can be solved, and the electromagnetic compatibility of the product is improved.
Drawings
The drawings described herein are for illustration of selected embodiments only and not all possible implementations, and are not intended to limit the scope of the invention.
Fig. 1 shows a schematic construction diagram of the present application.
Fig. 2 shows a functional block diagram of the present application.
The marks in the figure: the semiconductor device comprises a first substrate-1, a first metal layer-11, a second substrate-2, a second metal layer-21, a third substrate-3, a third metal layer-31, a fourth substrate-4, a fourth metal layer-41, a fifth substrate-5, a fifth metal layer-51 and a sixth metal layer-52.
Description of the embodiments
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings, but the described embodiments of the present invention are some, but not all embodiments of the present invention.
As shown in fig. 1, a balanced limiting field emission of a thick film circuit substrate includes: the first substrate 1, the second substrate 2, the third substrate 3, the fourth substrate 4 and the fifth substrate 5 are sequentially stacked from top to bottom, and finally fired to form the integrated multi-layer circuit board.
The top surface of the first substrate 1 is provided with a first metal layer 11 by adopting a thin film process, the first metal layer 11 is used for processing a first bridge, a second bridge, a radio frequency circuit, a limiter and placing components, such as a schottky diode, a PIN diode, a chip capacitor, a low noise amplifier and the like, and the first metal layer 11 is also provided with a grounding circuit.
The second metal layer 21 is prepared on the top surface of the second substrate 2 by a thick film process, and the second metal layer 21 is used for processing a radio frequency signal grounding layer, serving as a radio frequency signal ground of the top layer and isolating the radio frequency signal of the top layer.
The top surface of the third substrate 3 is provided with a third metal layer 31 by a thick film process, and the third metal layer 31 is used for processing low-frequency feed circuits such as a working state control line, a power supply control line, a bias circuit and the like.
The top surface of the fourth substrate 4 is provided with a fourth metal layer 41 by a thick film process, and the fourth metal layer 41 is used for processing a public ground plate, serving as an intermediate radio frequency signal ground and isolating the intermediate radio frequency signal.
The fifth substrate 5 is provided with a fifth metal layer 51 on its top surface by a thick film process, and the fifth metal layer 51 is used for processing a radio frequency signal transmission line.
The bottom surface of the fifth substrate 5 is provided with a sixth metal layer 52 by thick film technology, and the sixth metal layer 52 is used for processing a public ground plate and is used as an intermediate layer radio frequency signal ground and a ground plane of the whole multi-layer plate.
The thick film process is to transfer materials such as conductor paste, dielectric paste and the like onto a ceramic substrate by a screen printing method, and form a film which is firmly adhered on the ceramic substrate after high-temperature sintering. The metal slurry is different because of different sintering temperatures of the multilayer ceramic substrate, and the low-temperature multilayer ceramic substrate can be made into thick gold by using the printing gold slurry on the surface because of lower sintering temperature; the high-temperature multilayer ceramic substrate is thickened in a plating way due to different selection of slurry. The thin film technology is to sputter/evaporate a layer of metal film on a substrate, thicken the metal film by electroplating, and etch out a required circuit pattern by etching.
The power control lines of the first metal layer 11 and the third metal layer 31 are connected through metal via holes, and are used for transmitting the direct current bias of the limiter diode and the direct current control signal of the low-noise amplifier chip through the third metal layer 31, so that the volume of the product is reduced.
Part of the transmission lines in the first metal layer 11 are connected with the radio frequency signal transmission lines of the fifth metal layer 51 through metal through holes, and the radio frequency transmission circuit without devices in the limiting field is transmitted through the radio frequency signal transmission lines of the fifth metal layer 51, so that the volume of products can be reduced.
The grounding circuit in the first metal layer 11, the radio frequency signal grounding layer of the second metal layer 21, the fourth metal layer 41 public grounding plate, the fifth metal layer 51 public grounding plate and the sixth metal layer 52 public grounding plate are all connected through metal through holes; the stratum are connected with each other through the metal via holes, so that the common ground of the low-frequency part and the radio frequency part of the product is realized, the ground capacity is improved by increasing the number of the metal via holes as much as possible, the crosstalk between the radio frequency and the low frequency of the product is ensured, and the condition is provided for multilayer wiring; the power supply and control of the radio frequency circuit can be well realized through the connection of the metal through holes, the stratum is adopted to isolate the radio frequency signal from the low frequency signal, and the electromagnetic compatibility of products can be well met.
The fifth metal layer 51 is used for transmitting the rf transmission signal passing through the limiting field amplifier, including the rf transmission signal of the limiting field amplifier itself and other rf transmission signals except the limiting field amplifier.
Preferably, the first substrate 1, the second substrate 2, the third substrate 3, the fourth substrate 4 and the fifth substrate 5 are all made of ceramics. Because of the high insulation resistance, good electrical isolation is formed between the layers.
The first metal layer 11 is formed by a thin film process, and the second metal layer 21, the third metal layer 31, the fourth metal layer 41, the fifth metal layer 51, and the sixth metal layer 52 are all formed by a thick film process. The circuit of the first metal layer 11 of the printed board is designed as a thin film circuit, and circuits with high processing precision requirements, such as a land bridge, a radio frequency circuit and the like, are arranged on the top layer circuit. The circuit with low processing precision requirement, such as a low-frequency control line and a part of radio frequency transmission line, is designed by adopting a thick film circuit, so as to realize multilayer wiring. The printed board designed in this way can put the circuit with high processing precision requirement on the top layer, and other radio frequency signals and low frequency control signals with low precision requirement on the middle layer and the bottom layer are grounded. The circuit processing precision requirement of the product is guaranteed, the miniaturization requirement of the product is also guaranteed, and electromagnetic compatibility and the like are guaranteed.
In circuit design, the circuits between layers can be vertically interconnected by means of metal vias if connection is required. This approach allows for interconnection of circuits between any of the multiple layers. The power supply and control of the radio frequency circuit can be well realized, the stratum is adopted to isolate the radio frequency signal from the low frequency signal, and the electromagnetic compatibility of the product can be well met. In the circuit, a thin film process is adopted to process a first layer of circuit, and each metallization layer in the middle is designed by using a thick film process.
In operation, as shown in fig. 1 and 2, a radio frequency signal enters the device through the radio frequency input terminal and is equally distributed to the two branches through the first bridge on the first metal layer 11. If the input power is small, the limiter is in a low-loss state, the radio frequency signal enters a low-noise amplifier after passing through the limiter, and is amplified by the low-noise amplifier and then synthesized and output by the second bridge. If the input power reaches the magnitude that can damage the low noise amplifier, the limiter can work in a reflecting state to reflect the radio frequency power, and the reflected radio frequency signal passes through the first bridge. The signals reflected by the two paths of limiters are absorbed by a power load after being synthesized by a first bridge due to the phase reason; when the input radio frequency signal is higher, the power limit born by the first bridge is exceeded, the first bridge can be burnt, and the product is irreversibly damaged.
The foregoing description of the preferred embodiments of the invention is merely exemplary and is not intended to be exhaustive or limiting of the invention. It will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention.
Claims (4)
1. The utility model provides a balanced type amplitude limiting field of thick film circuit substrate puts which characterized in that includes: a first substrate (1), a second substrate (2), a third substrate (3), a fourth substrate (4) and a fifth substrate (5) which are sequentially overlapped from top to bottom;
preparing a first metal layer (11) on the top surface of the first substrate (1) by adopting a thin film process, wherein the first metal layer (11) is provided with a first bridge, a second bridge, a radio frequency circuit and components;
preparing a second metal layer (21) on the top surface of the second substrate (2) by adopting a thick film process, wherein the second metal layer (21) is provided with a radio frequency signal grounding layer;
preparing a third metal layer (31) on the top surface of the third substrate (3) by adopting a thick film process, wherein the third metal layer (31) is provided with a low-frequency feed circuit;
preparing a fourth metal layer (41) on the top surface of the fourth substrate (4) by adopting a thick film process, wherein the fourth metal layer (41) is provided with a public grounding plate;
preparing a fifth metal layer (51) on the top surface of the fifth substrate (5) by adopting a thick film process, wherein the fifth metal layer (51) is provided with a radio frequency signal transmission line;
preparing a sixth metal layer (52) on the bottom surface of the fifth substrate (5) by adopting a thick film process, wherein the sixth metal layer (52) is provided with a public grounding plate;
the grounding circuit in the first metal layer (11), the radio frequency signal grounding layer of the second metal layer (21), the public grounding plate of the fourth metal layer (41), the public grounding plate of the fifth metal layer (51) and the public grounding plate of the sixth metal layer (52) are all connected through metal through holes;
the fifth metal layer (51) is used for transmitting the radio frequency transmission signal subjected to amplitude limiting field emission;
the thick film process is to transfer the conductor paste and the dielectric paste material onto a ceramic substrate by a screen printing method, and form a film with firm adhesion on the ceramic substrate after high-temperature sintering; the thin film technology is to sputter/evaporate a layer of metal film on a substrate, thicken the metal film by electroplating, and etch out a required circuit pattern by etching.
2. The balanced limiting field emission of a thick film circuit substrate according to claim 1, wherein the first substrate (1), the second substrate (2), the third substrate (3), the fourth substrate (4) and the fifth substrate (5) are all made of ceramics.
3. The balanced limiting field emission of a thick film circuit substrate according to claim 1, wherein the power control lines of the first metal layer (11) and the third metal layer (31) are connected by metal vias.
4. The balanced limiting field emission of a thick-film circuit substrate according to claim 1, wherein part of the transmission lines in the first metal layer (11) are connected to the rf signal transmission lines in the fifth metal layer (51) by metal vias.
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| CN202310103056.9A CN115776763B (en) | 2023-02-13 | 2023-02-13 | Balanced type amplitude limiting field amplifier for thick film circuit substrate |
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| JP2010273058A (en) * | 2009-05-21 | 2010-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Amplitude limit amplifying circuit |
| EP3696907A1 (en) * | 2019-02-15 | 2020-08-19 | Schneider Electric Industries SAS | Radiofrequency transmission line, device comprising such a transmission line and system for monitoring and installation comprising such a device |
| CN218071453U (en) * | 2022-11-01 | 2022-12-16 | 四川益丰电子科技有限公司 | High-power PIN limiter chip |
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| US5089881A (en) * | 1988-11-03 | 1992-02-18 | Micro Substrates, Inc. | Fine-pitch chip carrier |
| JPH06334346A (en) * | 1993-05-18 | 1994-12-02 | Hitachi Ltd | Pattern forming method of thick film - thin film hybrid multilayered wiring board |
| JPH07321467A (en) * | 1994-05-30 | 1995-12-08 | Hitachi Ltd | Thick film/thin film multilayer wiring board |
| US20060024901A1 (en) * | 2004-08-02 | 2006-02-02 | Tong Hsing Electric Industries Ltd. | Method for fabricating a high-frequency and high-power semiconductor module |
| CN113079626A (en) * | 2021-03-18 | 2021-07-06 | 扬州国宇电子有限公司 | Ceramic substrate thin film circuit structure and preparation method thereof |
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Patent Citations (4)
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| JP2010273058A (en) * | 2009-05-21 | 2010-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Amplitude limit amplifying circuit |
| EP3696907A1 (en) * | 2019-02-15 | 2020-08-19 | Schneider Electric Industries SAS | Radiofrequency transmission line, device comprising such a transmission line and system for monitoring and installation comprising such a device |
| CN218071453U (en) * | 2022-11-01 | 2022-12-16 | 四川益丰电子科技有限公司 | High-power PIN limiter chip |
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