CN115580246A - 一种基于两级放大的正斜率增益放大器 - Google Patents
一种基于两级放大的正斜率增益放大器 Download PDFInfo
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- CN115580246A CN115580246A CN202211560807.1A CN202211560807A CN115580246A CN 115580246 A CN115580246 A CN 115580246A CN 202211560807 A CN202211560807 A CN 202211560807A CN 115580246 A CN115580246 A CN 115580246A
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- amplifier
- signal
- gain
- positive slope
- drain
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- 230000003321 amplification Effects 0.000 title claims abstract description 26
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 26
- 230000005669 field effect Effects 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 13
- 230000001939 inductive effect Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211560807.1A CN115580246B (zh) | 2022-12-07 | 2022-12-07 | 一种基于两级放大的正斜率增益放大器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211560807.1A CN115580246B (zh) | 2022-12-07 | 2022-12-07 | 一种基于两级放大的正斜率增益放大器 |
Publications (2)
Publication Number | Publication Date |
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CN115580246A true CN115580246A (zh) | 2023-01-06 |
CN115580246B CN115580246B (zh) | 2023-05-23 |
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CN202211560807.1A Active CN115580246B (zh) | 2022-12-07 | 2022-12-07 | 一种基于两级放大的正斜率增益放大器 |
Country Status (1)
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CN (1) | CN115580246B (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1219023A (zh) * | 1997-11-27 | 1999-06-09 | 日本电气株式会社 | 具有稳定增益斜率的半导体电路 |
US6265944B1 (en) * | 1999-09-27 | 2001-07-24 | Conexant Systems, Inc. | Fully integrated broadband RF voltage amplifier with enhanced voltage gain and method |
WO2008043843A1 (en) * | 2006-10-12 | 2008-04-17 | Telefonaktiebolaget Lm Ericsson (Publ) | Electronically adjustable gain slope controller circuit |
US20090261899A1 (en) * | 2008-04-21 | 2009-10-22 | Broadcom Corporation | Amplifier with Automatic Gain Profile Control and Calibration |
CN107615647A (zh) * | 2015-04-09 | 2018-01-19 | 德克萨斯仪器股份有限公司 | 低功率低相位噪声的振荡器 |
WO2020006185A1 (en) * | 2018-06-27 | 2020-01-02 | Viasat, Inc. | Amplifier with integrated gain slope equalizer |
CN112104330A (zh) * | 2020-07-22 | 2020-12-18 | 西安交通大学 | 一种宽带高增益平坦度射频/毫米波功率放大器 |
-
2022
- 2022-12-07 CN CN202211560807.1A patent/CN115580246B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1219023A (zh) * | 1997-11-27 | 1999-06-09 | 日本电气株式会社 | 具有稳定增益斜率的半导体电路 |
US6265944B1 (en) * | 1999-09-27 | 2001-07-24 | Conexant Systems, Inc. | Fully integrated broadband RF voltage amplifier with enhanced voltage gain and method |
WO2008043843A1 (en) * | 2006-10-12 | 2008-04-17 | Telefonaktiebolaget Lm Ericsson (Publ) | Electronically adjustable gain slope controller circuit |
US20090261899A1 (en) * | 2008-04-21 | 2009-10-22 | Broadcom Corporation | Amplifier with Automatic Gain Profile Control and Calibration |
CN107615647A (zh) * | 2015-04-09 | 2018-01-19 | 德克萨斯仪器股份有限公司 | 低功率低相位噪声的振荡器 |
WO2020006185A1 (en) * | 2018-06-27 | 2020-01-02 | Viasat, Inc. | Amplifier with integrated gain slope equalizer |
EP3799677A1 (en) * | 2018-06-27 | 2021-04-07 | Viasat, Inc. | Amplifier with integrated gain slope equalizer |
US20210126595A1 (en) * | 2018-06-27 | 2021-04-29 | Viasat, Inc. | Amplifier with integrated gain slope equalizer |
CN112104330A (zh) * | 2020-07-22 | 2020-12-18 | 西安交通大学 | 一种宽带高增益平坦度射频/毫米波功率放大器 |
Non-Patent Citations (2)
Title |
---|
YASUSHI ITOH等: ""L-band SiGe HBT active differential equalizers with variable inclination and position of the positive or negative gain slopes"" * |
胡砚: ""微波宽带放大器组件设计与实现"" * |
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Publication number | Publication date |
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CN115580246B (zh) | 2023-05-23 |
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Address after: Building 12, Hard Technology Enterprise Community, No. 3000 Biyuan Second Road, High tech Zone, Xi'an City, Shaanxi Province, 710065 Patentee after: Borui Jixin (Xi'an) Electronic Technology Co.,Ltd. Address before: 710199 building 12, hard technology enterprise community, No. 3000, Biyuan Second Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: XI'AN BORUI JIXIN ELECTRONIC TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20240422 Address after: Chengdu Xingu Enterprise Happiness Center, Building 2, A8-2, No. 399 Guoxin Avenue, Dongsheng Street, Shuangliu District, Chengdu City, Sichuan Province, 610200 Patentee after: Borui Jixin (Chengdu) Electronic Technology Co.,Ltd. Country or region after: China Address before: Building 12, Hard Technology Enterprise Community, No. 3000 Biyuan Second Road, High tech Zone, Xi'an City, Shaanxi Province, 710065 Patentee before: Borui Jixin (Xi'an) Electronic Technology Co.,Ltd. Country or region before: China |