CN115552052A - Pt-氧化物系溅射靶和垂直磁记录介质 - Google Patents

Pt-氧化物系溅射靶和垂直磁记录介质 Download PDF

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Publication number
CN115552052A
CN115552052A CN202180034320.7A CN202180034320A CN115552052A CN 115552052 A CN115552052 A CN 115552052A CN 202180034320 A CN202180034320 A CN 202180034320A CN 115552052 A CN115552052 A CN 115552052A
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CN
China
Prior art keywords
based alloy
volume
oxide
rich
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180034320.7A
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English (en)
Chinese (zh)
Inventor
金光谭
镰田知成
栉引了辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Publication of CN115552052A publication Critical patent/CN115552052A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
CN202180034320.7A 2020-05-18 2021-05-17 Pt-氧化物系溅射靶和垂直磁记录介质 Pending CN115552052A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020086785 2020-05-18
JP2020-086785 2020-05-18
PCT/JP2021/018559 WO2021235380A1 (ja) 2020-05-18 2021-05-17 Ｐｔ－酸化物系スパッタリングターゲット及び垂直磁気記録媒体

Publications (1)

Publication Number Publication Date
CN115552052A true CN115552052A (zh) 2022-12-30

Family

ID=78709040

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180034320.7A Pending CN115552052A (zh) 2020-05-18 2021-05-17 Pt-氧化物系溅射靶和垂直磁记录介质

Country Status (5)

Country Link
US (1) US20230203639A1 (https=)
JP (1) JPWO2021235380A1 (https=)
CN (1) CN115552052A (https=)
TW (1) TWI853168B (https=)
WO (1) WO2021235380A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025074510A (ja) * 2023-10-30 2025-05-14 田中貴金属工業株式会社 磁気記録媒体用スパッタリングターゲット

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214520A1 (en) * 2004-03-25 2005-09-29 Kabushiki Kaisha Toshiba Granular thin film, perpendicular magnetic recording medium employing granular thin film and magnetic recording apparatus
US20070072012A1 (en) * 2003-07-14 2007-03-29 Futoshi Nakamura Magnetic recording medium using grain isolation type film as under layer, method of manufacturing the same, and magnetic recording/reproducing apparatus using the same
WO2013094605A1 (ja) * 2011-12-22 2013-06-27 Jx日鉱日石金属株式会社 Ｃ粒子が分散したＦｅ－Ｐｔ系スパッタリングターゲット
JP2015097137A (ja) * 2013-10-10 2015-05-21 株式会社東芝 垂直磁気記録媒体、及び磁気記録再生装置
WO2016194383A1 (ja) * 2015-06-02 2016-12-08 富士電機株式会社 磁気記録媒体の製造方法
WO2017154741A1 (ja) * 2016-03-07 2017-09-14 田中貴金属工業株式会社 ＦｅＰｔ－Ｃ系スパッタリングターゲット
JP2019178401A (ja) * 2018-03-30 2019-10-17 田中貴金属工業株式会社 スパッタリングターゲット
WO2020053973A1 (ja) * 2018-09-11 2020-03-19 Ｊｘ金属株式会社 強磁性材スパッタリングターゲット

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8877359B2 (en) * 2008-12-05 2014-11-04 Wd Media (Singapore) Pte. Ltd. Magnetic disk and method for manufacturing same
JP5974327B2 (ja) * 2012-10-25 2016-08-23 Ｊｘ金属株式会社 非磁性物質分散型Ｆｅ−Ｐｔ系スパッタリングターゲット

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070072012A1 (en) * 2003-07-14 2007-03-29 Futoshi Nakamura Magnetic recording medium using grain isolation type film as under layer, method of manufacturing the same, and magnetic recording/reproducing apparatus using the same
US20050214520A1 (en) * 2004-03-25 2005-09-29 Kabushiki Kaisha Toshiba Granular thin film, perpendicular magnetic recording medium employing granular thin film and magnetic recording apparatus
WO2013094605A1 (ja) * 2011-12-22 2013-06-27 Jx日鉱日石金属株式会社 Ｃ粒子が分散したＦｅ－Ｐｔ系スパッタリングターゲット
JP2015097137A (ja) * 2013-10-10 2015-05-21 株式会社東芝 垂直磁気記録媒体、及び磁気記録再生装置
WO2016194383A1 (ja) * 2015-06-02 2016-12-08 富士電機株式会社 磁気記録媒体の製造方法
WO2017154741A1 (ja) * 2016-03-07 2017-09-14 田中貴金属工業株式会社 ＦｅＰｔ－Ｃ系スパッタリングターゲット
JP2019178401A (ja) * 2018-03-30 2019-10-17 田中貴金属工業株式会社 スパッタリングターゲット
WO2020053973A1 (ja) * 2018-09-11 2020-03-19 Ｊｘ金属株式会社 強磁性材スパッタリングターゲット

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Publication number Publication date
US20230203639A1 (en) 2023-06-29
JPWO2021235380A1 (https=) 2021-11-25
TWI853168B (zh) 2024-08-21
TW202214881A (zh) 2022-04-16
WO2021235380A1 (ja) 2021-11-25

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Application publication date: 20221230