CN115527895A - Wafer film pasting equipment and wafer film pasting method - Google Patents
Wafer film pasting equipment and wafer film pasting method Download PDFInfo
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- CN115527895A CN115527895A CN202211163774.7A CN202211163774A CN115527895A CN 115527895 A CN115527895 A CN 115527895A CN 202211163774 A CN202211163774 A CN 202211163774A CN 115527895 A CN115527895 A CN 115527895A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a wafer film pasting device and a wafer film pasting method, wherein the wafer film pasting device is used for pasting a dry film to a wafer, and the wafer film pasting device comprises: the dry film cutting device comprises a first plate, a feeding mechanism and a cutting tool, wherein a groove is formed in the first plate and used for placing a wafer, the feeding mechanism can attach the dry film to the wafer, and the cutting tool can cut the dry film along the edge of the wafer. The invention also discloses a wafer film pasting method, which comprises the following steps: s1, preparing wafer film pasting equipment and a dry film with a preset thickness; s2, placing the wafer in the groove; s3, attaching the dry film to a wafer; and S4, cutting the dry film along the edge of the wafer. The wafer is placed in the groove, the dry film is attached to the wafer through the feeding mechanism, and then the dry film attached to the wafer is cut along the edge of the wafer through the cutting tool, so that the surface of the wafer is attached with the dry film layer, and the phenomenon of film clamping in the electroplating process can be avoided by selecting the dry film with proper thickness.
Description
Technical Field
The invention relates to the field of wafer processing, in particular to wafer film pasting equipment and a wafer film pasting method.
Background
In the related art, when the circuit on the wafer is arranged, the manufacturing method generally includes coating a layer of photosensitive material on the sputtered wafer, generally spreading the photosensitive material on the surface by using a spin coating technique, wherein the thickness of the spin-coated photoresist is only a few micrometers after curing, and during the electroplating process, the thickness of the photosensitive material hardly reaches the thickness of the electroplated copper, and when the thickness of the electroplated copper is greater than the thickness of the photosensitive material, a film clamping phenomenon is easily generated, thereby causing some open circuits during etching.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a wafer film pasting device which can avoid the phenomenon of film clamping in the electroplating process.
The invention also provides a wafer film pasting method with the wafer film pasting equipment.
According to the wafer film sticking equipment of the first aspect embodiment of the present invention, the wafer film sticking equipment is used for sticking a dry film to the wafer, and the wafer film sticking equipment includes:
the first plate is provided with a groove, and the groove is used for placing the wafer;
the feeding mechanism can attach the dry film to the wafer;
a cutting tool capable of cutting the dry film along an edge of the wafer.
The wafer film pasting equipment provided by the embodiment of the invention at least has the following beneficial effects: set up the dry film of the corresponding size of attached to the wafer surface through the wafer pad pasting, because the dry film thickness is various, can adapt to different electro-coppering's copper thickness, can avoid producing the phenomenon of pressing from both sides the membrane in electroplating process through the dry film of selecting suitable thickness.
According to some embodiments of the invention, the wafer film laminating apparatus further comprises a second plate, the groove penetrates through the first plate, and the second plate is stacked below the first plate.
According to some embodiments of the invention, the wafer lamination apparatus further comprises a clamp that clamps the first plate and the second plate.
According to some embodiments of the invention, the depth of the groove is the same as the thickness of the wafer.
According to the wafer film pasting method of the second aspect of the invention, the wafer film pasting equipment of the first aspect is adopted to paste the dry film to the wafer, and the wafer film pasting method comprises the following steps:
s1, preparing the wafer film pasting equipment and the dry film with preset thickness;
s2, placing the wafer in the groove;
s3, attaching the dry film to the wafer;
and S4, cutting the dry film along the edge of the wafer.
The wafer film pasting method provided by the embodiment of the invention at least has the following beneficial effects: the mode of attaching the dry film to the wafer is adopted, the dry film with the preset thickness is attached to the wafer through the wafer film attaching equipment, the requirement of copper thickness of electroplated copper is met, and the phenomenon of film clamping in the electroplating process can be avoided.
According to some embodiments of the invention, the wafer lamination method further comprises:
s5, sequentially exposing and developing the dry film to form a preset pattern on the dry film;
s6, electroplating the preset pattern area.
According to some embodiments of the invention, the S1 comprises:
s1.1, cutting the groove to enable the groove to penetrate through the first plate;
s1.2, preparing a second plate, and stacking the second plate below the first plate.
According to some embodiments of the invention, the first plate and the second plate are clamped after the S1.2 step.
According to some embodiments of the invention, the wafer lamination method further comprises: and in the process of attaching the dry film to the wafer, the second plate temporarily fixes the wafer.
According to some embodiments of the present invention, after the step S6, the wafer film pasting method further includes:
and S7, removing the film, and dissolving the dry film by using a corrosive agent so as to remove the dry film from the wafer.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The invention is further described with reference to the following figures and examples, in which:
FIG. 1 is a schematic structural diagram of a first plate according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a second plate according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of a first plate and a second plate mated in accordance with an embodiment of the present invention;
fig. 5 is a schematic structural view of a wafer after being laminated with a film according to an embodiment of the invention.
Reference numerals: the wafer processing device comprises a first plate 100, a groove 110, a second plate 200, a wafer 300, a dry film 400, a feeding mechanism 500 and a clamping piece 600.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention and are not to be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, the meaning of a plurality is one or more, the meaning of a plurality is two or more, and the above, below, exceeding, etc. are understood as excluding the present numbers, and the above, below, within, etc. are understood as including the present numbers. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
In the description of the present invention, reference to the description of "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples", etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In an embodiment of the first aspect of the present invention, referring to fig. 1 and 2, a wafer film laminating apparatus is used for laminating a dry film 400 to a wafer 300, and includes: the wafer processing apparatus includes a first plate 100, a feeding mechanism 500, and a cutting tool (the cutting tool in the present invention is a cutter, which is not shown in the drawings), wherein the first plate 100 is provided with a groove 110, and the groove 110 is used for placing a wafer 300; the feeding mechanism 500 can attach the dry film 400 to the wafer 300; the cutting tool can cut the dry film 400 along the edge of the wafer 300. By placing the wafer 300 in the groove 110, the dry film 400 is attached to the wafer 300 by the feeding mechanism 500, and then the dry film 400 attached to the wafer 300 is cut along the edge of the wafer 300 by the cutting tool. Scribble one deck photosensitive material on wafer 300 among the conventional art, and use spin coating technique to spread photosensitive material on wafer 300 surface, and thickness after the photoresist solidification of spin coating still can not reach with the required standard of copper electroplating, consequently can lead to carrying out the in-process production of copper electroplating to wafer 300 and press from both sides the membrane phenomenon, this application adopts the mode of traditional spin coating photosensitive material of attached dry film replacement to the wafer, through the attached corresponding big or small dry film of wafer pad pasting tool to wafer surface, because dry film 400 thickness is various, can adapt to different copper electroplating's copper thickness, can avoid producing the phenomenon of pressing from both sides the membrane in the electroplating process through the dry film 400 of selecting suitable thickness, and the dry film is solid state structure, can carry out subsequent processing behind the dry film attached wafer, need not to wait for the solidification, the processing technology of wafer is simple, the machining efficiency of wafer has been improved. On the other hand, the wafer film pasting equipment adopted by the invention only needs to prepare the first plate 100 and open the groove 110 on the first plate 100, so that the wafer 300 can be placed on the first plate 100, the first plate 100 is sent to the feeding mechanism 500, and the dry film 400 is pasted on the first plate 100 by using the feeding mechanism 500, so that the dry film 400 can be pasted on the wafer 300.
It should be noted that, in the conventional automatic film sticking machine, the suction disc is usually used to suck the dry film 400 to be attached to the surface of the first board 100, and the automatic film sticking machine is only suitable for sticking films to large-sized square boards, the wafer 300 is small-sized and usually circular, and the automatic film sticking machine cannot directly stick films to small-sized wafers 300. By using the wafer film laminating device in the present application, the wafer 300 with a smaller size can also be applied to the film laminating process in the conventional feeding mechanism 500. It can be understood that, a person skilled in the art can place the wafer 300 in the groove 110 of the first plate 100 by selecting a suitable size of the first plate 100, so that the automatic film sticking machine can be used for sticking the dry film 400 to the wafer 300, and thus, the existing automatic film sticking machine can be used to stick the dry film to the wafer, and the defect of film clamping during electroplating can be overcome, and meanwhile, the cost can be saved, and the labor force can be reduced.
In order to improve the space utilization rate of the first plate 100 and improve the film-attaching efficiency of the wafer 300, the first plate 100 is provided with a plurality of grooves 110, and the grooves 110 may be arranged on the first plate 100 in an array manner, so as to improve the space utilization rate of the first plate 100 and improve the film-attaching efficiency; in an embodiment, as shown in fig. 1, the first plate 100 of the present invention is provided with two grooves 110, so that the space utilization rate of the first plate 100 is maximized, and the two grooves 110 are provided on the first plate 100, so that the feeding mechanism 500 can simultaneously film two wafers 300 at a time, thereby improving the film-attaching efficiency.
In some embodiments, in order to make the dry film 400 adhere to the wafer 300 better, the depth of the groove 110 is the same as the thickness of the wafer 300, and since the depth of the groove 110 is the same as the thickness of the wafer 300, when the wafer 300 is placed in the groove 110, the surface of the wafer 300 can be flush with the surface of the first plate 100, so that the feeding mechanism 500 can adhere the dry film 400 to the surface of the first plate 100 and can also adhere the dry film 400 to the surface of the wafer 300.
In some embodiments, referring to fig. 3 and 4, in order to make the dry film 400 better attached to the wafer 300 in the process of fixing the wafer 300 by using only the first plate 100, the depth of the groove 110 needs to be set to be the same as the thickness of the wafer 300, and the process of setting the depth of the groove 110 needs to have a certain precision, which is very inconvenient to operate, so far, the present invention further provides the second plate 200, and the fixing of the wafer 300 can be realized by selecting only the thickness of the first plate 100 to be the same as the thickness of the wafer 300, and then passing the groove 110 through the first plate 100 and stacking the second plate 200 under the first plate 100.
As can be appreciated, due to the provision of the second plate 200, control of the accuracy of the opening of the depth of the recess 110 in the first plate 100 is avoided, enabling a reduction in manual labor.
In some embodiments, referring to fig. 4, the wafer laminating apparatus further includes a clamping member 600, the clamping member 600 clamps the first plate 100 and the second plate 200, and the clamping member 600 is configured to clamp the first plate 100 and the second plate 200 to prevent the first plate 100 and the second plate 200 from being separated from each other during the laminating process.
It can be understood that, when the first plate 100 is stacked on the second plate 200, a gap is still formed between the first plate 100 and the second plate 200, so that when the wafer 300 is accommodated in the groove 110, a portion of the surface of the wafer 300 to be laminated is lower than the surface of the first plate 100, thereby resulting in a low adhesion between the surface of the wafer 300 lower than the first plate 100 and the dry film 400. Therefore, by providing the clamping member 600, the first plate 100 and the second plate 200 can be tightly connected, so that the situation that the surface of the wafer 300 is lower than the surface of the first plate 100 due to the gap between the first plate 100 and the second plate 200 is eliminated.
In the second embodiment of the present invention, a method for attaching a film to a wafer 300 is provided, in which the method for attaching a film to a wafer includes the following steps:
s1, preparing wafer film pasting equipment and a dry film 400 with a preset thickness, wherein in order to meet the thickness of the required electroplated copper, the thickness of the preset dry film 400 is larger than the thickness of the required electroplated copper;
s2, placing the wafer 300 in the groove 110, so that the wafer 300 can enter the feeding mechanism 500 along with the first plate 100;
s3, attaching the dry film 400 to the wafer 300, and attaching the dry film 400 to the first plate 100 through the feeding mechanism 500, wherein the wafer 300 is located in the groove 110 on the first plate 100, so that the dry film 400 can be attached to the wafer 300;
and S4, cutting the dry film 400 along the edge of the wafer 300, wherein the dry film 400 is cut along the edge of the wafer 300 by using a cutter.
The dry film 400 is attached to the wafer 300 through the steps S1-S4, so that the steps are simple, the operation is convenient, and the labor force can be greatly reduced.
It can be understood that, in the conventional art, a layer of photosensitive material is coated on the wafer 300, and the photosensitive material is spread on the surface of the wafer 300 by using a spin coating technique, and the thickness of the photoresist after being cured by spin coating still does not meet the standard required by the copper electroplating, so that the film clamping phenomenon is generated in the process of copper electroplating on the wafer 300.
In some embodiments, the wafer lamination method further comprises: s5, sequentially exposing and developing the dry film 400 to form a preset pattern on the dry film 400; and S6, electroplating the preset pattern area. Specifically, choose for use and predetermine the mask plate that the pattern matches, the exposure in-process mask plate shelters from the dry film, and the surface of exposure back dry film shows predetermined pattern protrudingly, and the regional dry film of predetermined pattern is sunken state, and in electroplating process, including the part that needs electroplate (predetermine the pattern region promptly) and the part that need not electroplate on wafer 300, wherein, the part that need not electroplate is insulated by dry film 400, and the part that needs electroplate is to predetermineeing on the regional electrolytic copper of pattern. In the traditional processing mode, the limitation of a spin coating process is caused, the thickness of electroplated copper is easily larger than that of a photosensitive material layer, and the phenomenon of film clamping is caused.
In some embodiments, S1 may further include:
s1.1, selecting the thickness of the first plate 100 to be the same as that of the wafer 300, and cutting the groove 110 to enable the groove 110 to penetrate through the first plate 100;
s1.2, prepare the second plate 200, and stack the second plate 200 under the first plate 100.
Due to the arrangement of the second plate 200, the wafer 300 can be fixed by selecting the thickness of the first plate 100 to be the same as that of the wafer 300, and then penetrating the groove 110 through the first plate 100 to stack the second plate 200 below the first plate 100.
In some embodiments, the first plate 100 and the second plate 200 are clamped after the step S1.2, and as mentioned in the embodiments of the first aspect, the first plate 100 and the second plate 200 are clamped to avoid the risk that the wafer 300 is separated from the first plate 100 and the second plate 200 during the film attaching process.
In some embodiments, in order to avoid insufficient fixing of the wafer 300 placed in the groove 110 and the first plate 100, the wafer lamination method further includes: the second plate 200 temporarily fixes the wafer 300 during the attachment of the dry film 400 to the wafer 300.
It can be understood that, after the feeding mechanism 500 attaches the dry film 400 to the wafer 300, in the process of detaching the wafer 300, the feeding mechanism 500 easily takes the wafer 300 away from the groove 110, which causes a gap between the dry film 400 and the surface of the first board 100 and incomplete attachment, and affects the subsequent cutting process, and therefore the double-sided adhesive tape is disposed on the second board 200 to temporarily fix the wafer 300 in the present invention. It is understood that in other embodiments, the wafer 300 may be temporarily fixed by glue; the second plate 200 may be provided with a through hole, and the suction tool may be used to suck the wafer 300 from the side of the second plate 200 away from the first plate 100 toward the through hole, so as to be sucked and fixed on the surface of the second plate 200.
In some embodiments, the wafer film pasting method of the present invention further includes, after the step S6: and S7, removing the film, and dissolving the dry film 400 by using an etchant so as to remove the dry film 400 from the wafer 300.
It can be understood that after the electroplated copper is electroplated on the wafer 300, the dry film 400 needs to be removed from the surface of the wafer 300, and the electroplated copper is covered by the dry film 400, so that the working difficulty of removing the dry film 400 from the wafer 300 is increased, so far, the dry film 400 can be well removed from the wafer 300 by dissolving the dry film 400 with the etchant, and the surface of the electroplated wafer 300 can be well cleaned by cleaning the etchant and the residual dry film 400 on the wafer 300.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention. Furthermore, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict.
Claims (10)
1. The utility model provides a wafer pad pasting equipment, its characterized in that, wafer pad pasting equipment be used for to the attached dry film of wafer, wafer pad pasting equipment includes:
the first plate is provided with a groove, and the groove is used for placing the wafer;
the feeding mechanism can attach the dry film to the wafer;
a cutting tool capable of cutting the dry film along an edge of the wafer.
2. The wafer lamination apparatus according to claim 1, further comprising a second plate, wherein the groove extends through the first plate, and the second plate is stacked below the first plate.
3. The wafer lamination apparatus according to claim 2, further comprising a clamp that clamps the first plate and the second plate.
4. The wafer laminating apparatus of claim 1, wherein a depth of the groove is the same as a thickness of the wafer.
5. A wafer film pasting method, characterized in that a wafer film pasting device according to any one of claims 1 to 4 is adopted to paste a dry film to the wafer, and the wafer film pasting method comprises the following steps:
s1, preparing the wafer film pasting equipment and the dry film with preset thickness;
s2, placing the wafer in the groove;
s3, attaching the dry film to the wafer;
and S4, cutting the dry film along the edge of the wafer.
6. The wafer lamination method according to claim 5, further comprising:
s5, sequentially exposing and developing the dry film to form a preset pattern on the dry film;
s6, electroplating the preset pattern area.
7. The wafer film pasting method according to claim 5, wherein the S1 comprises:
s1.1, cutting the groove to enable the groove to penetrate through the first plate;
s1.2, preparing a second plate, and stacking the second plate below the first plate.
8. The wafer film pasting method as claimed in claim 7, wherein the first plate and the second plate are clamped after the S1.2 step.
9. The wafer lamination method according to claim 7, further comprising: and in the process of attaching the dry film to the wafer, the second plate temporarily fixes the wafer.
10. The wafer film laminating method according to claim 6, wherein after the step S6, the wafer film laminating method further comprises:
and S7, removing the film, and dissolving the dry film by using a corrosive agent so as to remove the dry film from the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202211163774.7A CN115527895A (en) | 2022-09-23 | 2022-09-23 | Wafer film pasting equipment and wafer film pasting method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211163774.7A CN115527895A (en) | 2022-09-23 | 2022-09-23 | Wafer film pasting equipment and wafer film pasting method |
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| CN115527895A true CN115527895A (en) | 2022-12-27 |
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| CN202211163774.7A Pending CN115527895A (en) | 2022-09-23 | 2022-09-23 | Wafer film pasting equipment and wafer film pasting method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116646255A (en) * | 2023-05-24 | 2023-08-25 | 浙江嘉辰半导体有限公司 | Wafer level packaging technology meeting electromagnetic compatibility requirement |
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2022
- 2022-09-23 CN CN202211163774.7A patent/CN115527895A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116646255A (en) * | 2023-05-24 | 2023-08-25 | 浙江嘉辰半导体有限公司 | Wafer level packaging technology meeting electromagnetic compatibility requirement |
| CN116646255B (en) * | 2023-05-24 | 2024-03-22 | 浙江嘉辰半导体有限公司 | Wafer level packaging technology meeting electromagnetic compatibility requirement |
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