CN115516625A - 通过微装置侧壁传递信号 - Google Patents

通过微装置侧壁传递信号 Download PDF

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CN115516625A
CN115516625A CN202180033579.XA CN202180033579A CN115516625A CN 115516625 A CN115516625 A CN 115516625A CN 202180033579 A CN202180033579 A CN 202180033579A CN 115516625 A CN115516625 A CN 115516625A
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micro device
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conductive layer
sidewalls
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戈尔拉玛瑞扎·恰吉
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Vuereal Inc
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Abstract

本发明涉及微装置中的侧壁的结构及形成。所述结构允许微装置的一个侧通过导电层及垫接达另一侧。具体来说，所述微装置的顶侧及底侧在所述装置中的电流的方向上且侧壁是包围所述装置的所述顶侧及底侧的隔离表面。

Description

通过微装置侧壁传递信号
技术领域
本发明涉及微装置中的侧壁的形成。
发明内容
本发明涉及一种微装置结构，其包括：堆叠层，其包括功能活性层、掺杂层及阻挡层；导电层，其沉积于侧壁上，所述侧壁由电介质层覆盖，所述导电层将触点从所述微装置的顶部耦合到底部，且所述导电层至少通过一个点耦合到所述装置。在额外实施例中，所述导电层可覆盖所述侧壁的至少部分且可至少在一个区域中延伸于所述电介质层上方。
根据另一实施例，本发明公开一种通过微装置的侧壁传递信号的方法，所述方法包括：具有包括功能活性层、掺杂层及阻挡层的堆叠层；将第一导电层沉积于所述侧壁上；覆盖由电介质层覆盖的所述侧壁；通过所述第一导电层将触点从所述微装置的顶部耦合到底部；至少通过一个点将所述第一导电层耦合到所述微装置；及通过所述微装置的所述顶部及底部注入所述信号。
附图说明
在阅读以下详细描述及参考图式之后，本发明的前述及其它优点将变得显而易见。
图1展示具有通孔及垫的微装置结构的侧视图。
图2展示微装置结构的俯视图。
图3展示具有垫的微装置结构的仰视图。
图4展示具有通孔及垫的微装置结构的侧视图。
图5展示微装置结构的仰视图。
图6展示具有垫的微装置结构的俯视图。
尽管本公开易受各种修改及替代形式影响，但特定实施例或实施方案已在图式中以实例的方式展示且将在本文中详细描述。然而，应理解本发明不希望受限于所公开的特定形式。更确切来说，本公开希望涵盖落入由附随权利要求书界定的本发明的精神及范围内的所有修改、等效物及替代方案。
具体实施方式
在此描述中，术语“装置”及“微装置”可互换地使用。然而，所属领域的技术人员应清楚此处所描述的实施例与装置尺寸无关。
如图1、2及3中所展示，微装置结构102由堆叠层组成。层包含界定装置的功能性的活性层、掺杂层及阻挡层。电荷从顶部及底部注入装置中。在一种情况中，到底部及顶部的触点需要在顶部或底部上。在此情况中，来自一个侧的触点需要移到另一侧。现存方法是蚀刻装置以产生到另一侧上的掺杂或欧姆层的通路且将金属沉积于蚀刻区域上且使用导电层覆盖掺杂或欧姆层。挑战是蚀刻区域在装置结构中产生可在压力下破裂的薄弱点。此外，其减少装置面积。
在一个实施例中，存在一种微装置结构，其包括：堆叠层，其包括功能活性层、掺杂层及阻挡层；第一导电层，其沉积于侧壁上。装置可具有顶侧及底侧及侧壁。顶侧及底侧在装置中的电流的方向上且侧壁是包围装置的顶侧及底侧的隔离表面。首先处理顶侧且接着翻转装置且处理底侧。在形成触点或垫之后，在顶部及底部上可存在进一步处理。侧壁由电介质层覆盖；第一导电层将触点从微装置的底面耦合到顶面；且第一导电层至少通过一个点耦合到装置。
图1展示使用沉积于侧壁上的连接到底部及顶部触点的导电层106将装置的顶侧连接到底面上的触点垫128的示范性实施例。如图1中所展示，在装置的底侧与基板分离且顶侧固定在基板上之后，通过另一导电层124将导电层106带到底侧。导电层124通过电介质层120与装置的底侧分离。开口或通孔122形成于电介质120中以提供到装置的底侧的通路。导电层126通过通孔122耦合到底侧。垫128及130形成于导电层124及126的顶部上。导电层及垫也可相同。
导电层106可围绕装置。导电层124可围绕装置。在导电层106或124的顶部上可存在其它电介质层。
如图2中所展示，通过将导电层106沉积于侧壁上，从顶部或底部的触点传递到另一侧。侧壁由电介质层覆盖。在一种情况中，顶部触点耦合到底侧。此处，装置的顶部上的电介质层104被开口，且导电层106至少通过一个点106-2耦合到装置102。电介质104开口可小于覆盖顶面的导电点106-2。在另一相关情况中，电介质104的开口可大于导电点106-2。
图3展示具有垫的微装置结构的仰视图。此处，导电层106连接到底面上的垫128，其中垫128通过电介质层与底面分离。连接件124可为垫128的部分或分离层。连接件124覆盖侧壁及底面的至少部分。可存在通过电介质层120中的开口122连接到底面的另一垫130(图1中所展现)。
另一相关的实施例是一种微装置结构，其包括：堆叠层，其包括功能活性层、掺杂层及阻挡层；第一导电层，其沉积于侧壁上；所述侧壁由电介质层覆盖；所述第一导电层将触点从所述微装置的顶面耦合到底面；且所述第一导电层至少通过一个点耦合到所述装置。
图4展示使用沉积于侧壁上的连接到底部及顶部触点的导电层106将装置的底侧连接到顶面上的触点垫128的示范性实施例。如图4、5及6中所展示，微装置结构202由堆叠层组成。层包含界定装置的功能性的活性层、掺杂层及阻挡层。电荷从顶部及底部注入装置中。在一种情况中，到底部及顶部的触点需要在顶部或底部上。在此情况中，来自一个侧的触点需要移到另一侧。现存方法是蚀刻装置以产生到另一侧上的掺杂或欧姆层的通路且将金属沉积于蚀刻区域上且使用导电层覆盖掺杂或欧姆层。挑战是蚀刻区域在装置结构中产生可在压力下破裂的薄弱点。此外，其减少装置面积。此处，导电金属206形成于侧壁及顶侧的部分上。垫228形成于装置的顶侧上，其中所述垫连接到导电层106，且垫通过电介质层204与装置202分离。电介质层204还覆盖侧壁。垫228或导电层206可为相同层或共享一些层。另一垫可形成于顶面上，其中所述另一垫通过电介质层204中的开口222连接到装置的顶部。另一导电层226可形成为垫230的部分或与垫230相同。导电层226可与层206同时形成。导电层206通过第二导电层224连接到装置202的底面。
如图4中所展示，垫228及230形成于导电层206及226的部分上。导电层及垫也可相同。
图5展示微装置结构的仰视图。此处，导电层206围绕装置202。第二导电层224将第一导电层206连接到装置202的底面。底面可具有电介质层且层224通过电介质层中的开口连接到底面。
如图6中所展示，通过将导电层206沉积于侧壁上，来自顶部或底部的触点传递到另一侧。侧壁由电介质层覆盖。在一种情况中，底部触点耦合到顶侧。此处，装置的顶部上的电介质层204被开口，且导电层226至少通过一个点206-2耦合到装置202。如图6中所展示，导电层206沉积于侧壁的至少部分上且至少在一个区域中延伸于电介质层204上方。
如图6中所展示，在装置的底侧与基板分离且顶侧固定于基板上之后，通过另一导电层224将导电层206带到底侧。导电层224耦合到装置的底侧。
导电层206可围绕装置。导电层224也可围绕装置。在导电层206或224的顶部上可存在其它电介质层。
方法实施例
本发明公开一种通过微装置的侧壁传递信号的方法，所述方法包括：具有包括功能活性层、掺杂层及阻挡层的堆叠层；将第一导电层沉积于所述侧壁上；覆盖由电介质层覆盖的所述侧壁；通过所述第一导电层将触点从所述微装置的顶部耦合到底部；至少通过一个点将所述第一导电层耦合到所述微装置；及通过所述微装置的所述顶部及底部注入所述信号。
已为了说明及描述而呈现本发明的一或多个实施例的前述描述。不希望穷举或使本发明受限于所公开的精确形式。依据以上教示，许多修改及变动是可行的。本发明的范围希望不由此详细说明限制，而由附随权利要求书限制。

Claims (26)

1.一种微装置结构，其包括：
堆叠层，其包括功能活性层、掺杂层及阻挡层；
第一导电层，其沉积于侧壁上；
所述侧壁由电介质层覆盖；
所述第一导电层将触点从所述微装置的顶部耦合到底部；及
所述第一导电层至少通过一个点耦合到所述装置。
2.根据权利要求1所述的微装置结构，其中所述微装置的所述顶部上的所述电介质层具有接达所述微装置的所述底侧的通孔。
3.根据权利要求1所述的微装置结构，其中第二导电通过所述电介质层与所述微装置的所述底部分离。
4.根据权利要求1所述的微装置结构，其中第三导电层通过所述通孔耦合到所述底部。
5.根据权利要求1所述的微装置结构，其中所述第三导电通过所述电介质层与所述微装置的所述底部部分地分离。
6.根据权利要求1所述的微装置结构，其中所述第二及第三导电层的顶部具有垫。
7.根据权利要求3所述的微装置结构，其中所述第一及第二导电层围绕所述微装置。
8.根据权利要求7所述的微装置结构，其中其它电介质层位于所述第一及第二导电层的顶部上。
9.根据权利要求1所述的微装置结构，其中所述第一导电层覆盖所述侧壁的至少部分且至少在一个区域中延伸于所述电介质层上方。
10.根据权利要求9所述的微装置结构，其包括位于所述第一及第四导电层的顶部上的垫。
11.根据权利要求10所述的微装置结构，其中所述导电层及垫相同。
12.根据权利要求10所述的微装置结构，其中所述第一导电层通过耦合到所述微装置的所述底侧的第五导电层连接到所述底侧。
13.根据权利要求12所述的微装置结构，其中其它电介质层覆盖所述第一及第五导电层的顶部。
14.一种通过微装置的侧壁传递信号的方法，所述方法包括：
具有包括功能活性层、掺杂层及阻挡层的堆叠层；
将第一导电层沉积于所述侧壁上；
覆盖由电介质层覆盖的所述侧壁；
通过所述第一导电层将触点从所述微装置的顶部耦合到底部；
至少通过一个点将所述第一导电层耦合到所述微装置；及
通过所述微装置的所述顶部及底部注入所述信号。
15.根据权利要求14所述的方法，其中所述微装置的所述顶部上的所述电介质层具有接达所述微装置的所述底侧的通孔。
16.根据权利要求14所述的方法，其中第二导电通过所述电介质层与所述微装置的所述底部分离。
17.根据权利要求14所述的方法，其中第三导电层通过所述通孔耦合到所述底部。
18.根据权利要求14所述的方法，其中所述第三导电通过所述电介质层与所述微装置的所述底部部分地分离。
19.根据权利要求14所述的方法，其中所述第二及第三导电层的顶部具有垫。
20.根据权利要求16所述的方法，其中所述第一及第二导电层围绕所述微装置。
21.根据权利要求20所述的方法，其中其它电介质层位于所述第一及第二导电层的顶部上。
22.根据权利要求14所述的方法，其中所述第一导电层覆盖所述侧壁的至少部分且至少在一个区域中延伸于所述电介质层上方。
23.根据权利要求22所述的方法，其中在所述第一及第四导电层的顶部上存在垫。
24.根据权利要求23所述的微装置结构，其中所述导电层及垫相同。
25.根据权利要求23所述的微装置结构，其中所述第一导电层通过耦合到所述微装置的所述底侧的第五导电层连接到所述底侧。
26.根据权利要求25所述的微装置结构，其中其它电介质层覆盖所述第一及第五导电层的所述顶部。
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