CN115512919A - Preparation method of curved surface thin film resistor - Google Patents

Preparation method of curved surface thin film resistor Download PDF

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Publication number
CN115512919A
CN115512919A CN202210990566.8A CN202210990566A CN115512919A CN 115512919 A CN115512919 A CN 115512919A CN 202210990566 A CN202210990566 A CN 202210990566A CN 115512919 A CN115512919 A CN 115512919A
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curved surface
film resistor
steps
strippable paint
following
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Inventor
刘镜波
张怡
王天石
王瑞俊
王楠
张义萍
王亮
刘颖
杜小东
王庆兵
金涛
付银辉
杨显涛
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CETC 29 Research Institute
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The invention provides a preparation method of a curved surface thin film resistor, which relates to the technical field of curved surface thin film resistors and comprises the following steps: s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object; s2, preparing a curved surface circuit by laser activation; s3, spraying strippable paint on the curved surface circuit; s4, removing strippable paint by laser to form a local protection area; s5, performing pretreatment; s6, sputtering to form a thin film resistor; and S7, removing the strippable paint. Compared with a chip resistor, the invention can avoid the complexity of manual welding of the dense resistor and the height of the protrusion.

Description

Preparation method of curved surface thin film resistor
Technical Field
The invention relates to the technical field of curved surface thin film resistors, in particular to a preparation method of a curved surface thin film resistor.
Background
The integrated resistor on the traditional curved surface circuit is manually soldered by using a chip resistor prepared in advance to form electrical interconnection. The problem with this is: 1) When the chip resistance on the curved surface is small and dense, the manual tin soldering is unrealistic, and at present, curved surface welding equipment is almost absent; 2) The chip resistor has certain thickness, a protruding surface is obvious, the turnover is easy to bump, and interference can be formed during assembly.
The other curved surface resistor is prepared by manufacturing a circuit and a resistor on a flexible substrate in advance through a micro-printing process, and then bending the flexible substrate and attaching the flexible substrate to a mounting surface. The problem with this is: 1) The resistance value of the resistor can be changed by bending and is easy to damage; 2) The flexible substrate cannot be attached to an undeployed curved surface such as a spherical surface.
In order to solve this problem, it is studied to directly print the resistor paste on any curved surface by an ink-jet printing method. The advantage is that the flexibility is good, and the shortcoming is: 1) The fluid resistance paste is printed on the curved surface and can be continuously spread before being cured incompletely, so that the resistance value is influenced; 2) The printed build-up resistor still has a significant thickness.
Disclosure of Invention
The invention aims to provide a preparation method of a curved surface thin film resistor, which solves the technical problem that the thin film resistor is difficult to integrate on a curved surface circuit in the prior art.
The invention discloses a preparation method of a curved surface thin film resistor, which comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit;
s4, removing strippable paint by laser to form a local protection area;
s5, performing pretreatment;
s6, sputtering to form a thin film resistor;
and S7, removing the strippable paint to obtain the composite material.
Further, in step S1, the medium is engineering plastic.
Further, the medium is polyimide and/or polyether ether ketone.
Further, in the step S3, the strippable paint is chloroprene rubber, the viscosity is 40-50 cps, the thickness of each spray coating is 30-40 μm, the thickness of each spray coating is 4-6, and the total thickness is 120-200 μm.
Further, in step S3, the strippable paint is dried for 1.5-2 hours at 80 ℃ after being sprayed.
Further, in the step 4, a five-axis laser processing mode is adopted for removing the strippable paint by the laser, the laser wavelength is 1030nm, the power is 10-20 w, the overlapping rate of light spots is 0-100%, the frequency is 20-100 kHz, and the scanning speed is 0-800 mm/s.
Further, in step S5, the pretreatment includes a degreasing step and a stain removing step.
Further, the deoiling liquid used in the deoiling step is a NaOH solution with the mass concentration of 2-10%;
further, in step S5, the organic solvent used in the stain removing step is one or a combination of ethanol, acetone and butanone.
Furthermore, ultrasonic waves are added in the steps of oil removal and stain removal for 5-10 min.
And further, after the steps of oil removal and stain removal are finished, deionized water is adopted for washing for 5-10 min.
Further, in step S6, the sputtering step is to put the medium into a composite ion plating machine with a vacuum degree of 2 × 10 -3 ~9×10 -3 Pa, sputtering power of 150W-300W, sputtering pressure of 0.1-0.8 Pa, target base distance of 10-50 cm, and sputtering time of 160-500 min to obtain film resistor of 0.5-0.8 micron thickness.
Compared with the prior art, the invention has the beneficial effects that:
1. compared with a chip resistor, the invention can avoid the complexity of manual welding of the dense resistor and the height of the protrusion;
2. compared with the resistor on the flexible substrate, the invention can prepare the film resistor on any visible circuit curved surface;
3. compared with the ink-jet printing resistor, the invention can prepare the film resistor with accurate resistance.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention are described clearly and completely below, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments.
Example 1
A preparation method of a curved surface thin film resistor comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object, wherein the medium is polyether-ether-ketone;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit, wherein the strippable paint is chloroprene rubber with the viscosity of 50cps, the thickness of each spraying is 40 mu m, the total thickness of each spraying is 180 mu m, and the curved surface circuit is dried for 2 hours at 80 ℃ after the spraying is finished;
s4, removing strippable paint by laser to form a local protection area, and selecting a five-axis laser processing mode, wherein the laser wavelength is 1030nm, the power is 15w, the overlapping rate of light spots is 60%, the frequency is 30kHz, and the scanning speed is 320mm/s;
s5, performing pretreatment, including oil removal and stain removal steps, wherein the deoiling liquid is a NaOH solution with the mass concentration of 8%; the organic solvent for removing the stains is ethanol; ultrasonic wave is added during oil removal and stain removal for 10min, and then deionized water is adopted for washing for 10min;
s6, putting the medium into a composite ion coating machine, wherein the vacuum degree is 5 multiplied by 10 < -3 >, the sputtering power is 180W, the sputtering air pressure is 0.5Pa, the target substrate distance is 20cm, and the sputtering time is 200min, so that the thin film resistor with the thickness of 0.6 mu m is obtained;
and S7, removing the strippable paint to obtain the composite material.
Example 2
A preparation method of a curved surface thin film resistor comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object, wherein the medium is polyether-ether-ketone;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit, wherein the strippable paint is chloroprene rubber with the viscosity of 50cps, the thickness of each spraying is 40 microns, the total thickness of each spraying is 180 microns, and the coating is dried for 2 hours at 80 ℃ after the spraying is finished;
s4, removing strippable paint by laser to form a local protection area, and selecting a five-axis laser processing mode, wherein the laser wavelength is 1030nm, the power is 12w, the overlapping rate of light spots is 60%, the frequency is 30kHz, and the scanning speed is 320mm/s;
s5, performing pretreatment, including oil removal and stain removal steps, wherein the deoiling liquid is a NaOH solution with the mass concentration of 8%; the organic solvent for removing the stains is ethanol; ultrasonic wave is added during oil removal and stain removal for 10min, and then deionized water is adopted for washing for 10min;
s6, putting the medium into a composite ion coating machine, wherein the vacuum degree is 5 multiplied by 10 < -3 >, the sputtering power is 180W, the sputtering air pressure is 0.5Pa, the target substrate distance is 20cm, and the sputtering time is 200min, so that the thin film resistor with the thickness of 0.6 mu m is obtained;
and S7, removing the strippable paint to obtain the composite material.
Example 3
A preparation method of a curved surface thin film resistor comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object, wherein the medium is polyether-ether-ketone;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit, wherein the strippable paint is chloroprene rubber with the viscosity of 50cps, the thickness of each spraying is 40 microns, the total thickness of each spraying is 180 microns, and the coating is dried for 2 hours at 80 ℃ after the spraying is finished;
s4, removing strippable paint by laser to form a local protection area, and selecting a five-axis laser processing mode, wherein the laser wavelength is 1030nm, the power is 21w, the overlapping rate of light spots is 60%, the frequency is 30kHz, and the scanning speed is 320mm/s;
s5, performing pretreatment, including oil removal and stain removal steps, wherein the deoiling liquid is a NaOH solution with the mass concentration of 8%; the organic solvent for removing the stains is ethanol; ultrasonic wave is added during oil removal and stain removal for 10min, and then deionized water is adopted for washing for 10min;
s6, putting the medium into a composite ion plating machine, wherein the vacuum degree is 5 multiplied by 10 < -3 >, the sputtering power is 180W, the sputtering pressure is 0.5Pa, the target base distance is 20cm, and the sputtering time is 200min, so that a thin film resistor with the thickness of 0.6 mu m is obtained;
and S7, removing the strippable paint to obtain the composite material.
Comparative example 1
A preparation method of a curved surface thin film resistor comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object, wherein the medium is polyether-ether-ketone;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit, wherein the strippable paint is chloroprene rubber with the viscosity of 50cps, the thickness of each spraying is 40 mu m, the total thickness of each spraying is 180 mu m, and the curved surface circuit is dried for 2 hours at 80 ℃ after the spraying is finished;
s4, removing strippable paint by laser to form a local protection area, and selecting a five-axis laser processing mode, wherein the laser wavelength is 1030nm, the power is 10w, the overlapping rate of light spots is 50%, the frequency is 30kHz, and the scanning speed is 400mm/s;
s5, performing pretreatment, including oil removal and stain removal steps, wherein the deoiling liquid is a NaOH solution with the mass concentration of 8%; the organic solvent for removing the stains is ethanol; ultrasonic wave is added during oil removal and stain removal for 10min, and then deionized water is adopted for washing for 10min;
s6, putting the medium into a composite ion plating machine, wherein the vacuum degree is 5 multiplied by 10 < -3 >, the sputtering power is 200W, the sputtering pressure is 0.5Pa, the target base distance is 25cm, and the sputtering time is 180min, so that a thin film resistor with the thickness of 0.5 mu m is obtained;
and S7, removing the strippable paint to obtain the composite material.
Comparative example 2
A preparation method of a curved surface thin film resistor comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object, wherein the medium is polyether-ether-ketone;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit, wherein the strippable paint is chloroprene rubber with the viscosity of 50cps, the thickness of each spraying is 40 microns, the total thickness of each spraying is 180 microns, and the coating is dried for 2 hours at 80 ℃ after the spraying is finished;
s4, removing strippable paint by laser to form a local protection area, and selecting a five-axis laser processing mode, wherein the laser wavelength is 1030nm, the power is 30w, the overlapping rate of light spots is 50%, the frequency is 30kHz, and the scanning speed is 400mm/s;
s5, performing pretreatment, including oil removal and stain removal steps, wherein the deoiling liquid is a NaOH solution with the mass concentration of 8%; the organic solvent for removing the stains is ethanol; ultrasonic wave is added during oil removal and stain removal for 10min, and then deionized water is adopted for washing for 10min;
s6, putting the medium into a composite ion plating machine, wherein the vacuum degree is 5 multiplied by 10 < -3 >, the sputtering power is 200W, the sputtering pressure is 0.5Pa, the target base distance is 25cm, and the sputtering time is 180min, so that a thin film resistor with the thickness of 0.5 mu m is obtained;
and S7, removing the strippable paint to obtain the final product.
Comparative example 3
A preparation method of a curved surface thin film resistor comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object, wherein the medium is polyether-ether-ketone;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit, wherein the strippable paint is chloroprene rubber with the viscosity of 50cps, the thickness of each spraying is 40 microns, the total thickness of each spraying is 180 microns, and the coating is dried for 2 hours at 80 ℃ after the spraying is finished;
s4, removing strippable paint by laser to form a local protection area, and selecting a five-axis laser processing mode, wherein the laser wavelength is 1030nm, the power is 15w, the overlapping rate of light spots is 50%, the frequency is 30kHz, and the scanning speed is 400mm/s;
s5, performing pretreatment, including oil removal and stain removal steps, wherein the deoiling liquid is a NaOH solution with the mass concentration of 8%; the organic solvent for removing the stains is ethanol; ultrasonic waves are added for 10min during oil removal and stain removal, and then deionized water is adopted for washing for 10min;
s6, putting the medium into a composite ion plating machine, wherein the vacuum degree is 5 multiplied by 10 < -3 >, the sputtering power is 200W, the sputtering air pressure is 0.5Pa, the target base distance is 25cm, and the sputtering time is 180min, so that the thin film resistor with the thickness of 0.5 mu m is obtained;
and S7, removing the strippable paint to obtain the composite material.
Comparative example 4
A preparation method of a curved surface thin film resistor comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object, wherein the medium is polyether-ether-ketone;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit, wherein the strippable paint is chloroprene rubber with the viscosity of 50cps, the thickness of each spraying is 40 microns, the total thickness of each spraying is 180 microns, and the coating is dried for 2 hours at 80 ℃ after the spraying is finished;
s4, removing strippable paint by laser to form a local protection area, and selecting a five-axis laser processing mode, wherein the laser wavelength is 1030nm, the power is 15w, the overlapping rate of light spots is 60%, the frequency is 30kHz, and the scanning speed is 320mm/s;
s5, performing pretreatment, including oil removal and stain removal steps, wherein the deoiling liquid is a NaOH solution with the mass concentration of 8%; the organic solvent for removing the stains is ethanol; ultrasonic wave is added during oil removal and stain removal for 10min, and then deionized water is adopted for washing for 10min;
s6, putting the medium into a composite ion plating machine, wherein the vacuum degree is 5 multiplied by 10 < -3 >, the sputtering power is 200W, the sputtering pressure is 0.5Pa, the target base distance is 25cm, and the sputtering time is 300min, so that a thin film resistor with the thickness of 0.8 mu m is obtained;
and S7, removing the strippable paint to obtain the final product.
Comparative example 5
A preparation method of a curved surface thin film resistor comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object, wherein the medium is polyether-ether-ketone;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit, wherein the strippable paint is chloroprene rubber with the viscosity of 50cps, the thickness of each spraying is 40 microns, the total thickness of each spraying is 180 microns, and the coating is dried for 2 hours at 80 ℃ after the spraying is finished;
s4, removing strippable paint by laser to form a local protection area, and selecting a five-axis laser processing mode, wherein the laser wavelength is 1030nm, the power is 15w, the overlapping rate of light spots is 60%, the frequency is 30kHz, and the scanning speed is 320mm/s;
s5, performing pretreatment, including oil removal and stain removal steps, wherein the deoiling liquid is a NaOH solution with the mass concentration of 8%; the organic solvent for removing the stains is ethanol; ultrasonic wave is added during oil removal and stain removal for 10min, and then deionized water is adopted for washing for 10min;
s6, putting the medium into a composite ion plating machine, wherein the vacuum degree is 5 multiplied by 10 < -3 >, the sputtering power is 200W, the sputtering pressure is 0.5Pa, the target base distance is 25cm, and the sputtering time is 180min, so that a thin film resistor with the thickness of 0.5 mu m is obtained;
and S7, removing the strippable paint to obtain the composite material.
Comparative example 6
A preparation method of a curved surface thin film resistor comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object, wherein the medium is polyether-ether-ketone;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit, wherein the strippable paint is chloroprene rubber with the viscosity of 50cps, the thickness of each spraying is 40 microns, the total thickness of each spraying is 180 microns, and the coating is dried for 2 hours at 80 ℃ after the spraying is finished;
s4, removing strippable paint by laser to form a local protection area, and selecting a five-axis laser processing mode, wherein the laser wavelength is 1030nm, the power is 15w, the overlapping rate of light spots is 60%, the frequency is 30kHz, and the scanning speed is 320mm/s;
s5, performing pretreatment, including oil removal and stain removal steps, wherein the deoiling liquid is a NaOH solution with the mass concentration of 8%; the organic solvent for removing the stains is ethanol; ultrasonic waves are added for 10min during oil removal and stain removal, and then deionized water is adopted for washing for 10min;
s6, putting the medium into a composite ion plating machine, wherein the vacuum degree is 5 multiplied by 10 < -3 >, the sputtering power is 160W, the sputtering pressure is 0.5Pa, the target base distance is 25cm, and the sputtering time is 180min, so that a thin film resistor with the thickness of 0.5 mu m is obtained;
and S7, removing the strippable paint to obtain the composite material.
TABLE 1 Effect table of key parameters
Figure BDA0003803747000000091
Figure BDA0003803747000000101
Figure BDA0003803747000000111
The above embodiments are exemplified by the present embodiment, but the present embodiment is not limited to the above optional embodiments, and persons skilled in the art can obtain other various embodiments by arbitrarily combining the above embodiments, and any person can obtain other various embodiments based on the teaching of the present embodiment. The above detailed description should not be construed as limiting the scope of the present embodiments, which should be defined in the claims, and the description should be used for interpreting the claims.

Claims (10)

1. A preparation method of a curved surface film resistor is characterized by comprising the following steps: the method comprises the following steps:
s1, designing a three-dimensional structure of a medium and a conformal circuit on the surface of the medium according to an application object;
s2, preparing a curved surface circuit by laser activation;
s3, spraying strippable paint on the curved surface circuit;
s4, removing strippable paint by laser to form a local protection area;
s5, performing pretreatment;
s6, sputtering to form a thin film resistor;
and S7, removing the strippable paint to obtain the final product.
2. The method for preparing the curved surface film resistor according to claim 1, wherein the method comprises the following steps: in step S1, the medium is engineering plastic.
3. The method for preparing the curved surface film resistor according to claim 1, wherein the method comprises the following steps: in the step S3, the strippable paint is chloroprene rubber, the viscosity is 40-50 cps, the thickness of each spraying is 30-40 microns, the number of the spraying is 4-6, and the total thickness is 120-200 microns.
4. The method for preparing the curved surface film resistor according to claim 1, wherein in the step S3, the strippable paint is dried at 80 ℃ for 1.5-2 hours after being sprayed.
5. The method for preparing the curved surface film resistor according to claim 1, wherein the method comprises the following steps: in the step 4, a five-axis laser processing mode is adopted for removing the strippable paint by the laser, the laser wavelength is 1030nm, the power is 10-20 w, the overlapping rate of light spots is 0-100%, the frequency is 20-100 kHz, and the scanning speed is 0-800 mm/s.
6. The method for preparing the curved surface film resistor according to claim 1, wherein the method comprises the following steps: in step S5, the pretreatment comprises the steps of oil removal and stain removal.
7. The method for preparing the curved surface film resistor according to claim 6, wherein the method comprises the following steps: the deoiling liquid used in the deoiling step is a NaOH solution with the mass concentration of 2-10%.
8. The method for manufacturing the curved surface film resistor according to claim 6, wherein the method comprises the following steps: in the step S5, the organic solvent used in the stain removing step is one or a combination of ethanol, acetone and butanone.
9. The method for manufacturing the curved surface film resistor according to claim 6, wherein the method comprises the following steps: after the steps of oil removal and stain removal are finished, deionized water is adopted for washing for 5-10 min.
10. The method for preparing the curved surface film resistor according to claim 1, wherein the method comprises the following steps: in step S6, the sputtering step is to put the medium into a composite ion plating machine, the vacuum degree is 2 x 10 < -3 > to 9 x 10 < -3 > Pa, the sputtering power is 150W to 300W, the sputtering air pressure is 0.1 to 0.8Pa, the target base distance is 10 to 50cm, and the sputtering time is 160 to 500min, so that the film resistor with the thickness of 0.5 to 0.8 mu m is obtained.
CN202210990566.8A 2022-08-18 2022-08-18 Preparation method of curved surface thin film resistor Pending CN115512919A (en)

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