JP2004096018A - Manufacturing method for circuit substrate, electrooptical apparatus, and electronic appliance - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To transcribe such transcribed objects as elements and circuits to a single destined transcription substrate while selecting as a unit either of the elements and circuits, without inverting their senses, relatively simply, and inclusive of the objects having different manufacturing processes from each other. <P>SOLUTION: The manufacturing method for circuit substrates has a process (S11) for peeling by a suction either of a plurality of first transcription objects (a) from a first originated transcription substrate (SUBA) having the transcription objects (a), a process (S12) for transcribing the peeled first transcription object (a) to a predetermined position (Pa) of a destined transcription substrate (SUBD), a process (S13) for peeling by a suction either of a plurality of second transcription objects (b) from a second originated transcription substrate (SUBB) having the transcription objects (b), and a process (S14) for transcribing the peeled second transcription object (b) to a predetermined position (Pb) of the destined transcription substrate (SUBD). <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of manufacturing a circuit board by transferring elements and circuits, and more particularly to an improvement in a method of manufacturing a circuit board that efficiently transfers elements and circuits from a plurality of transfer source substrates.
[0002]
[Prior art]
2. Description of the Related Art In recent years, with respect to the manufacture of circuit boards provided with thin film elements such as thin film transistors (thin film transistors) and thin film diodes (TFDs), elements that have been discarded by etching by transferring a small substrate containing the elements and circuits to a transfer destination substrate Various techniques for reducing constituent materials and significantly reducing manufacturing costs have been studied.
[0003]
Conventionally, as a technique for placing an LSI circuit manufactured on a silicon wafer on another substrate, a method called a microstructure technology developed by Alien Technology is known (Information DISPLAY, Vol. 15, No. 11 (November 1999)) (Non-Patent Document 1). This microstructure technology is a substrate in which LSI circuits manufactured on a silicon wafer are separated into microchips (= microstructures), and then a solvent in which the microstructures are dispersed is pre-patterned with holes for embedding. The microstructure is placed on a predetermined position on the substrate. According to this microstructure technology, a large number of microstructures that have been formed on a silicon wafer can be distributed over the substrate.
[0004]
However, this microstructure technology has the disadvantage that it is difficult to reliably arrange the microstructure on the substrate and to perform accurate alignment. Further, since the direction in which the microstructure is arranged is random, it is necessary to provide a special circuit in the microstructure such as making the circuit symmetrical.
[0005]
In addition, a method using a transfer technique in manufacturing a color filter of a liquid crystal display device is disclosed in US Pat. No. 6,057,067 (Patent Document 1).
[0006]
Further, as a method for transferring a thin film element such as a thin film transistor formed on a substrate to a transfer body, the present applicant forms a transfer layer on a substrate via a release layer, and bonds all of the layers to the transfer body. A transfer method for irradiating the release layer with light to cause peeling and releasing the substrate from the release layer has been developed, and a patent application has already been filed (JP-A-10-125931: Patent Document 2). Similarly, the present applicant has developed a transfer method in which the entire transfer target layer is bonded to a primary transfer member and then transferred to a secondary transfer member, and a patent application has already been filed (Japanese Patent Laid-Open No. 11-26733). Patent Document 3).
[0007]
According to these transfer technologies, functional devices that require a high-temperature process for manufacturing can be transferred onto a desired substrate, including those that cannot withstand such high temperatures.
[0008]
[Non-Patent Document 1]
Information DISPLAY, Vol. 15, No. 11, November 1999
[Patent Document 1]
US Pat. No. 6,057,067
[Patent Document 2]
Japanese Patent Laid-Open No. 10-125931
[Patent Document 3]
JP-A-11-26733
[Problems to be solved by the invention]
However, the above-described conventional transfer technique has the following problems.
[0009]
That is, in the conventional transfer technology, the entire transferred object such as the elements and circuits provided on the transfer source substrate is transferred to the transfer destination substrate. Later, after the transfer destination base material was cut into a required chip size (or small substrate size) by dicing or the like, the separated chips and the like had to be accurately aligned on the final substrate. For this reason, the subject that manufacturing efficiency fell easily occurred. In addition, in order to peel off the entire transferred object such as elements and circuits, it is necessary to supply energy over a wide range in addition to the necessary elements and circuits.
[0010]
In particular, when the entire thin film element layer formed on the transfer source substrate is transferred to the transfer destination substrate, the elements and circuits are inverted and transferred to the transfer destination substrate. In order to connect the circuit to the wiring or the like of the transfer destination substrate, a special structure is required for the element or the circuit, or a special process for connection on the transfer destination substrate is required.
[0011]
Moreover, the front and back of the elements and circuits can be restored by transferring to the primary transfer body and retransferring to the secondary transfer body, but it is inevitable that the number of steps for transfer increases.
[0012]
Furthermore, in the conventional transfer method, the elements and circuits formed on one transfer source substrate are transferred to the transfer destination substrate. Therefore, the elements and circuits formed on the transfer source substrate must be manufactured in the same process. was there. For this reason, it has been difficult to form a circuit board in which elements and circuits that cannot be manufactured in the same manufacturing process are combined by a conventional transfer method.
[0013]
[Means for Solving the Problems]
In view of the above-described problems, the present invention can be applied to the same transfer destination in a relatively simple manner and including transfer target bodies having different manufacturing processes without reversing the direction in units of transfer target elements such as elements and circuits. It is an object of the present invention to provide a method for manufacturing a circuit board that can be transferred to a substrate.
[0014]
The present invention includes a step of temporarily fixing and peeling one or more of the transfer target bodies from each of a plurality of transfer source substrates on which a plurality of transfer target bodies are formed, and each of the transferred transfer target substrates on each of transfer destination substrates. And a step of transferring each of the circuit board to a predetermined position.
[0015]
According to the above-described method, transferred objects such as elements and circuits formed independently of each other are integrated on each transfer source substrate, and the transferred objects are peeled off from each transfer source substrate by temporary fixing. The image is transferred to a predetermined position on the transfer destination substrate in the same direction. For this reason, it is possible to easily arrange the transfer object without using an intermediate transfer substrate for reversing the direction of the transfer object. In addition, since it is possible to select and arrange the transfer target bodies required from a plurality of transfer source substrates, it is possible to easily manufacture an assembly substrate in which a plurality of types of elements and circuits are integrated.
[0016]
Here, in the present invention, the “transfer object” refers to a thin film transistor, a diode, a resistor, an inductor, a capacitor, a single element regardless of whether it is an active element or a passive element, or an element integrated and wired so as to exhibit a certain function. A circuit (chip) such as an integrated circuit, a part of a circuit composed of a combination of a plurality of elements, or all or a part of a device configured to perform a certain function by combining one or more circuits such as an integrated circuit. means. That is, there is no limitation on the configuration, shape, and size of the “transfer object”.
[0017]
In the present invention, the “transfer source substrate” refers to a substrate on which a plurality of transfer objects are formed, and is not necessarily a flat plate. For example, the transfer target may be formed on a spherical surface, or may not have a certain rigidity like a flexible film.
[0018]
Further, in the present invention, the “transfer destination substrate” refers to an object on which the transfer target is to be finally placed, and is not necessarily a flat plate. For example, the transfer target may be formed on a spherical surface, or may not have a certain rigidity like a flexible film.
[0019]
Furthermore, in the present invention, “temporary fixing” refers to fixing a transfer target in a fixed direction with a constant force in a state as it is by pressure, electrostatic force, magnetic force, or mechanical force. Any means can be used as long as it can temporarily hold the body.
[0020]
Specifically, the present invention relates to a step of temporarily fixing and peeling any one of the first transfer bodies from a first transfer source substrate on which a plurality of first transfer bodies are formed, and the peeled first transfer body. A step of transferring to a predetermined position of the transfer destination substrate, a step of temporarily fixing and peeling any of the second transferred bodies from the second transfer source substrate on which a plurality of second transferred bodies are formed, and peeling And a step of transferring the second transferred object to a predetermined position on the transfer destination substrate.
[0021]
According to the above method, the first transfer source substrate and the second transfer source substrate, which are formed independently of each other, are integrally formed on the first transfer source substrate and the second transfer source substrate. Then, the first transferred body and the second transferred body are separated from each of the first and second transfer source substrates by temporary fixing, and transferred to a predetermined position on the transfer destination substrate in the same direction. Therefore, the first and second transfer bodies can be easily arranged without using an intermediate transfer substrate for reversing the direction of the transfer body. Further, since it is possible to select and arrange the first and second transfer target members required from both the first and second transfer source substrates, an assembly in which a plurality of types of elements and circuits are integrated. The substrate can be easily manufactured.
[0022]
In addition, the present invention includes a step of temporarily fixing one or more transferred objects by temporarily fixing them from a transfer source substrate on which a plurality of transferred objects formed by the same manufacturing process are formed, and the peeling And a step of transferring each of the one or more objects to be transferred to predetermined positions, respectively.
[0023]
According to the above method, since a plurality of types of transferred bodies formed in the same process are formed on the transfer source substrate, the type of the transferred body is selected, temporarily fixed, peeled off, and then transferred. become. For this reason, it is possible to easily arrange any type of transfer object without using an intermediate transfer substrate for reversing the direction of the transfer object. In addition, since it is possible to select and arrange a plurality of types of transferred objects, an assembly substrate on which a plurality of types of elements and circuits are integrated can be easily manufactured.
[0024]
Here, in the above-described invention, a plurality of transfer source substrates formed by different manufacturing processes are prepared, and one or more transferred objects may be selectively peeled from each of the plurality of transfer source substrates. Good.
[0025]
According to the above method, each transfer source substrate is formed with a transfer object including elements and circuits that cannot be formed on the same substrate by different manufacturing processes. Further, a plurality of types of transferred materials are prepared by different manufacturing methods. Since such a variety of transferred objects can be selectively temporarily fixed and transferred, an assembly substrate in which a plurality of types of elements and circuits having different manufacturing processes are integrated can be easily manufactured.
[0026]
Specifically, the present invention includes a step of temporarily fixing one or more transferred objects from a first transfer source substrate on which a plurality of types of transferred objects manufactured by the first manufacturing process are formed, A plurality of types of transferred objects manufactured by a process of transferring the peeled one or more transferred objects to predetermined positions of the transfer destination substrate and a second manufacturing process different from the first manufacturing process. A step of selectively temporarily fixing and peeling one or more transferred objects from the second transfer source substrate on which the substrate is formed, and the one or more transferred objects to be peeled at predetermined positions on the transfer destination substrate, respectively. A circuit board manufacturing method comprising: a transferring step.
[0027]
According to the above method, the first and second transfer target substrates include elements and circuits that cannot be formed on the same substrate by different first and second manufacturing steps. Each body is formed. A plurality of types of first and second objects to be transferred by the different production methods are prepared. Since such a variety of transferred objects can be selectively temporarily fixed and transferred, an assembly substrate in which a plurality of types of elements and circuits having different manufacturing processes are integrated can be easily manufactured.
[0028]
Specifically, the step of peeling off the transfer body in the present invention includes a step of bringing the temporary fixing means into contact with the transfer body to be peeled, and a step of temporarily fixing the transfer body by suctioning with the temporary fixing means. And a step of moving the temporary fixing means on which the transfer target is temporarily fixed to peel the transfer target from the transfer source substrate.
[0029]
Here, in the present invention, “suction” means that a relative low pressure part is created in part and the object is attracted to the low pressure part by the surrounding high atmospheric pressure. For example, each transfer object is “sucked” by vacuum tweezers and peeled off by the suction force.
[0030]
Here, the “temporary fixing means” is not particularly limited as long as it has a structure capable of temporarily fixing the transfer object by suction. For example, the vacuum tweezers have a tube shape having a tip portion formed of a flexible resin, and can be sucked from the opening of the tip portion by a vacuum pump or the like. If the tip is brought into contact with the surface of the transfer object and sucked, the transfer object is temporarily fixed. The temporary fixing means is adapted to change the position of the temporary transfer means from the transfer source substrate to the transfer destination substrate by the transfer means so as to transfer the suction object.
[0031]
Specifically, the step of transferring the transfer target in the present invention includes the step of supplying an adhesion means to the transfer destination substrate, and the temporary fixing means on which the transfer target is temporarily fixed at a predetermined position on the transfer destination substrate. A step of transporting and adhering the member to be transferred by an adhering unit, and a step of releasing the temporary fixing by releasing the suction of the temporary fixing unit that transported the adhered transferred object.
[0032]
Here, the “adhesion means” only needs to be able to fix the transfer target to the transfer destination substrate, and various known adhesives can be applied. A photo-curing resin, a thermoplastic resin, a thermosetting resin, or a thermoplastic resin is used. It is also possible to apply according to manufacturing conditions. It is also possible to use an adhesive sheet. Further, the “adhesion means” includes not only the case of mechanically connecting by so-called adhesion but also the case of electrically connecting the transfer substrate and the transfer destination substrate by solder or other means.
[0033]
As a specific example, a predetermined amount of the adhesive unit may be discharged from a liquid ejecting apparatus to a predetermined position. “Liquid ejecting device” refers to a device configured to eject a liquid material containing an adhesive component by utilizing a pressure change of the liquid material. For example, an electrostatic drive type, a piezo drive type, a heat drive type, etc. Ink-jet heads are conceivable. The electrostatic drive type head has a structure in which an electrode is provided adjacent to the diaphragm that forms the wall surface of the pressure chamber substrate in which the pressure chamber is provided, and a predetermined voltage is applied between the pressure chamber substrate and the electrode. The diaphragm forming the wall surface of the pressure chamber is deformed by using the electrostatic force generated when the pressure is generated, and the volume of the pressure chamber is changed to discharge the liquid in the pressure chamber. A piezo drive type head has a structure in which a piezoelectric element is provided on a diaphragm that forms the wall surface of a pressure chamber. By applying a predetermined voltage to the piezoelectric element, the diaphragm is deformed to reduce the volume of the pressure chamber. The liquid inside the pressure chamber is changed and discharged. The thermal drive type head has a structure in which a heat application means is provided at a predetermined location in the liquid flow path, and by applying a predetermined voltage to the heat application means, the heat application means generates heat and bubbles are generated in the liquid. The liquid is discharged by the pressure.
[0034]
Or you may make it apply | coat an adhesion means to the one part or all area | region containing the position which should transfer on a transfer destination board | substrate. As a coating method, in addition to the above-described liquid ejecting apparatus (ejection apparatus, ink jet head), a known method suitable for forming a film by an adhesive means on one surface such as a spin coating method or a printing method can be applied.
[0035]
Here, the present invention includes a step of supplying a transfer destination substrate, a step of transferring a transfer object to the transfer destination substrate by the circuit board manufacturing method of the present invention, and a step of discharging the transfer destination substrate after transfer. By repeating, a new transfer destination substrate may be sequentially supplied.
[0036]
According to the above method, the transfer destination substrate can be used as a final product substrate, and any transfer target can be integrated on the final substrate and manufactured as a predetermined assembly substrate. Good manufacturing is possible. In particular, since it is possible to arbitrarily select a plurality of types of transfer objects, it is possible to provide a manufacturing method suitable for manufacturing circuit boards for various types of production.
[0037]
Here, in the present invention, the transfer object is peeled off by applying energy to a partial area of the transfer source substrate corresponding to the transfer object to be peeled, and peeling off the transfer object corresponding to the partial area. It can be. For example, if light is irradiated as energy, energy can be applied to an arbitrary region and accurate positioning can be performed at the same time, which is particularly advantageous when the transfer target is a very small size. is there. Here, the energy source is not limited. For example, when laser light is used, energy can be efficiently applied because it is coherent light, and energy can be applied to an accurate position.
[0038]
Further, in the present invention, the transferred object is peeled by applying energy to a part or all of the transfer source substrate including a plurality of transferred objects to be peeled, so that the transferred object included in the part or all of the transferred object is removed. One or more transfer members can be peeled off.
[0039]
In the present invention, for example, the transfer source substrate is manufactured by a step of forming a release layer on the transfer source substrate and a step of forming a transfer target layer including a transfer target on the release layer.
[0040]
Here, the “peeling layer” may be formed of a material that weakens the bonding force between the transfer source substrate and the transfer target body by applying energy. For example, amorphous silicon, amorphous silicon containing hydrogen, or nitrogen may be used. Amorphous silicon, hydrogen-containing alloys, nitrogen-containing alloys, multilayer films, ceramics, metals, organic polymer materials, and the like can be used.
[0041]
Here, it is preferable to further include a step of providing a separation structure for separating the individual transferred objects in the vicinity of the boundary of the transferred objects with respect to the transferred object layer. Here, the “separation structure” means a groove that separates the boundary between the transferred bodies (formed on a part or all of the transferred body or a part or all of the release layer), a concavo-convex structure, and a fracture near the boundary. However, it includes a case where the transfer body is formed with a margin so as not to affect the function of the transfer body.
[0042]
This invention is a circuit board manufactured by the manufacturing method of the said circuit board. An example of such a circuit board is an active matrix substrate. According to this active matrix substrate, a large number of elements and circuits dispersed and arranged on the transfer destination base material are intensively manufactured on the transfer source base material, and these are arranged at predetermined positions on the transfer destination base material. Compared with conventional active matrix substrates that are manufactured by forming elements directly on the substrate, the area efficiency in the manufacture of devices such as thin film transistors can be greatly improved, especially for large active matrix substrates. It can be provided at low cost.
[0043]
In addition, since many elements and circuits are manufactured on the transfer source base material in a concentrated manner and then transferred to the transfer destination base material, the manufactured elements and circuits are damaged in the manufacturing process such as heat. Finally, it can be mounted on the transfer destination base material, and the performance of the circuit board can be improved. Further, it becomes possible to easily select and eliminate elements and circuits before transfer, and as a result, the product yield can be improved.
[0044]
In addition, by accurately placing minute elements and circuits at predetermined positions on the final transfer destination base material, the followability to bending of the substrate is improved, and by using a flexible transfer destination base material, it is flexible and light. In addition, an active matrix display device that is resistant to dropping impact can be provided. Further, a circuit board having a curved surface such as a curved display can be provided.
[0045]
The present invention is also an electro-optical device including a circuit board manufactured by the method for manufacturing a circuit board.
[0046]
Here, the “electro-optical device” means a general device including an electro-optical element that emits light by electrical action or changes the state of light from the outside. The device that emits light by itself and the passage of light from the outside Including those that control For example, as an electro-optic element, a liquid crystal element, an electrophoretic element, an EL (electroluminescence) element, an active matrix display device provided with an electron-emitting element that emits light by applying electrons generated by applying an electric field to a light-emitting plate, and the like Say.
[0047]
For example, in the case of an electro-optical device using an EL element, a manufacturing process of the EL element is different from a manufacturing process of an element such as a thin film transistor that drives the EL element. By manufacturing these on different transfer source substrates and selectively accumulating them as transfer objects, the electro-optical device can be easily knitted.
[0048]
In addition, by using the transfer method, the EL element can be mounted by transfer without causing thermal damage to the light emitting layer and the antireflection layer during the manufacture of the EL element, and between the substrate and the light emitting layer as in the past. Compared with the case where an element is formed, the element does not interfere with display, so that the display performance is improved.
[0049]
Moreover, this invention is also an electronic device provided with the circuit board manufactured by the manufacturing method of the said circuit board.
[0050]
According to the electronic device of the present invention, a plurality of elements such as elements and circuits constituting the electronic device are formed on one transfer source substrate if they can be manufactured in the same process, and other manufacturing processes are performed. If necessary, it can be manufactured on other transfer source substrates, and a transfer target can be selectively sucked from each transfer source substrate and integrated on a circuit board for manufacturing an electronic device. For this reason, the present invention provides a simple method as a method of manufacturing an electronic device using a wide variety of elements and circuits.
[0051]
In addition, since the transfer method is used in the present invention, a large number of elements and circuits used in electronic devices distributed and arranged on the base material at intervals are intensively manufactured on the transfer source base material. Can be accurately transferred to a predetermined position on the transfer destination base material, so that the area efficiency in the manufacture of elements such as thin film transistors can be greatly improved compared to conventional electronic devices that are manufactured by forming elements directly on the substrate. .
[0052]
In addition, since many elements and circuits are manufactured on the transfer source base material in a concentrated manner and then transferred to the transfer destination base material, the manufactured elements and circuits are damaged in the manufacturing process such as heat. Finally, it can be mounted on the transfer destination base material, and the performance of the electronic device can be improved.
[0053]
Further, it becomes possible to easily select and eliminate elements and circuits before transfer, and as a result, the product yield can be improved.
[0054]
In addition, by accurately placing minute elements and circuits at predetermined positions on the final transfer destination base material, the followability to bending of the substrate is improved, and by using a flexible transfer destination base material, it is flexible and light. It is possible to provide an electronic device that is resistant to the impact of dropping. Furthermore, since an electronic device having a curved surface such as a curved display can be provided, the shape can be made impossible or difficult in the conventional product, and the degree of freedom in product design is expanded.
[0055]
Here, the “electronic device” refers to a device in general having a certain function by a combination of a plurality of elements or circuits, and includes, for example, an electro-optical device and a memory. One or more circuit boards can be provided. The configuration is not particularly limited, but for example, an IC card, a mobile phone, a video camera, a personal computer, a head-mounted display, a rear-type or front-type projector, a fax machine with a display function, a digital camera finder, a portable TV , DSP devices, PDAs, electronic notebooks, electrical bulletin boards, advertising announcement displays, and the like.
[0056]
DETAILED DESCRIPTION OF THE INVENTION
Next, preferred embodiments of the present invention will be described with reference to the drawings.
<First Embodiment>
In the first embodiment of the present invention, one or more transfer objects are temporarily fixed and peeled from each of a plurality of transfer source substrates on which a plurality of different kinds of transfer objects are formed. This is a circuit board manufacturing method in which a transfer target substrate is transferred to a predetermined position on each of transfer destination substrates.
[0057]
FIG. 1 shows a schematic view of a circuit board manufacturing method according to the first embodiment.
The first embodiment relates to a method for continuously manufacturing a circuit board. That is, as shown in FIG. 1, a step (S10) of supplying transfer destination substrates SUBD one by one, a step of peeling / transferring a transfer object by a transfer method described later (S11 to S14), a transfer after transfer By repeating the step (S15) of sequentially discharging the previous substrates SUBD, the transfer target substrates SUBD1 to SUBDn are sequentially supplied and manufactured.
[0058]
As a transfer method, first, a step of temporarily fixing and peeling any of the first transferred bodies Sa from the first transfer source substrate SUBA on which a plurality of first transferred bodies Sa are formed (S11), A step of transferring the transfer object Sa to a predetermined position Pa of the transfer destination substrate SUBD (S12); any second transfer object from the second transfer source substrate SUBB on which a plurality of second transfer objects Sb are formed; A step (S13) of temporarily fixing and peeling Sb and a step (S14) of transferring the peeled second transferred object Sb to a predetermined position Pb of the transfer destination substrate SUBD are provided.
[0059]
In the transfer source substrate SUBA, a plurality of the same transfer target Sa in the region A are previously accumulated. Similarly, in the transfer source substrate SUBB, a plurality of identical transfer objects Sb are preliminarily accumulated in the region B. These forming methods will be described in detail in the following steps S101 to S103.
[0060]
Note that the process of forming the transfer target Sa or Sb on the transfer source substrate SUBA or SUBB may be performed first or simultaneously.
[0061]
The transfer object Sa or Sb is peeled off by the temporary fixing means Ha or Hb. The temporary fixing means Ha or Hb is brought into contact with the transferred body Sa or Sb, and is temporarily fixed by sucking the temporary fixed means, whereby the transferred body Sa or Sb is temporarily fixed. Alternatively, it is achieved by moving Hb (raising in the figure) to peel off the transfer object from the transfer source substrate.
[0062]
In addition, the transfer of the transfer object Sa or Sb is performed by supplying a bonding means (not shown) to the transfer destination substrate SUBA or SUBB and transporting the temporary fixing means Ha or Hb to a predetermined position Pa or Pb of the transfer destination substrate SUBA or SUBB. This is achieved by releasing the temporary fixing by releasing the suction of the temporary fixing means Ha or Hb that has adhered the transferred object and transported the transferred transferred object Sa or Sb.
[0063]
Note that the process of forming the transfer target Sa or Sb on the transfer source substrate SUBA or SUBB may be performed first or simultaneously. Similarly, the material to be transferred Sa or Sb may be peeled off or transferred first or simultaneously. The temporary fixing means may also be used to peel and transfer the transferred objects Sa and Sb in order. In addition, a predetermined pattern P0 may be provided in advance on the transfer destination substrate SUBD.
[0064]
Next, a detailed manufacturing method will be described with reference to a cross-sectional view of a manufacturing process of the circuit board manufacturing method according to the first embodiment shown in FIG.
(Peeling layer forming step: ST101)
First, as shown in FIG. 2: ST101, a release layer 11 is formed on a transfer source substrate.
The transfer source substrate 10 preferably has a light-transmitting property that allows light to pass therethrough. This is because light can be applied to the release layer via the transfer source substrate, and the release layer can be released quickly and accurately by light irradiation. The light transmittance is preferably 10% or more, and more preferably 50% or more. This is because the higher the transmittance, the smaller the light attenuation (loss) and the smaller the amount of light required to peel off the release layer 11.
[0065]
The transfer source substrate 10 is preferably made of a highly reliable material, and particularly preferably made of a material having excellent heat resistance. The reason for this is that when forming the transfer target layer 12, the process temperature may be high (for example, about 350 to 1000 ° C.) depending on the type and forming method. If it is excellent, the range of setting of film forming conditions such as the temperature condition is widened when forming the transfer target layer 12 on the transfer source substrate 10. As a result, when a large number of elements and circuits are manufactured on the transfer source substrate, a desired high-temperature treatment is possible, and a highly reliable element and circuit can be manufactured with high reliability.
[0066]
Therefore, it is preferable that the transfer source substrate 10 is made of a material having a strain point equal to or higher than Tmax, where Tmax is the maximum temperature when forming the transfer target layer 12. Specifically, the constituent material of the transfer source substrate 10 preferably has a strain point of 350 ° C. or higher, and more preferably 500 ° C. or higher. As such a thing, heat resistant glass, such as quartz glass, Corning 7059, Nippon Electric Glass OA-2, is mentioned, for example.
[0067]
Further, the thickness of the transfer source substrate 10 is not particularly limited, but usually, it is preferably about 0.1 to 5.0 mm, and more preferably about 0.5 to 1.5 mm. This is because when the thickness of the transfer source substrate 10 is thicker, the strength increases, and when the thickness is thinner, the light attenuation is less likely to occur when the transmittance of the transfer source substrate 10 is low. When the light transmittance of the transfer source substrate 10 is high, the thickness thereof may exceed the upper limit value.
[0068]
Note that the thickness of the transfer source substrate 10 is preferably uniform so that light can be uniformly irradiated.
[0069]
In this way, there are a number of conditions for the transfer source substrate that is the transfer source base material, but unlike the transfer destination base material that is the final product, the transfer source base material can be used repeatedly. Even if an expensive material is used, it is possible to reduce an increase in manufacturing cost by repeated use.
[0070]
The release layer 11 has such a property that it absorbs irradiated light and causes peeling (hereinafter referred to as “in-layer peeling” or “interfacial peeling”) within the layer and / or at the interface. It is preferable that the bonding force between atoms or molecules of the substance constituting the release layer 11 disappears or decreases due to light irradiation, that is, ablation occurs to cause in-layer peeling and / or interfacial peeling.
[0071]
In some cases, the gas is released from the release layer 11 by light irradiation, and a separation effect is exhibited. That is, there are a case where the component contained in the release layer 11 is released as a gas, and a case where the release layer 11 absorbs light and becomes a gas for a moment, and its vapor is released, contributing to separation. . Examples of the composition of the release layer 11 include those described in the following materials A to F.
[0072]
Material A. Amorphous silicon (a-Si)
This amorphous silicon may contain hydrogen (H). In this case, the content of H is preferably about 2 atomic% or more, and more preferably about 2 to 20 atomic%. Thus, when a predetermined amount of hydrogen (H) is contained, hydrogen is released by light irradiation, and an internal pressure is generated in the release layer 11, which becomes a force for peeling the upper and lower thin films. The content of hydrogen (H) in the amorphous silicon is adjusted by appropriately setting film forming conditions such as gas composition, gas pressure, gas atmosphere, gas flow rate, temperature, substrate temperature, and input power in CVD. be able to. Amorphous silicon has good light absorption, is easy to form, and is highly practical. Therefore, by forming the release layer with amorphous silicon, it is possible to inexpensively form a release layer that is accurately peeled by light irradiation.
[0073]
Material B. Various oxide ceramics such as silicon oxide or silicate compound, titanium oxide or titanate compound, zirconium oxide or zirconate compound, lanthanum oxide or lanthanum oxide compound, electrical conductor (ferroelectric material) or semiconductor
Examples of silicon oxide include SiO and SiO.₂, Si₃O₂Examples of silicic acid compounds include K₂SiO₃, Li₂SiO₃, CaSiO₃, ZrSiO₄, Na₂SiO₃Is mentioned.
[0074]
As titanium oxide, TiO, Ti₂O₃TiO₂As the titanic acid compound, for example, BaTiO₄, BaTiO₃, Ba₂Ti₉O_{2 0}, BaTi₅O₁₁, CaTiO₃, SrTiO₃, PbTiO₃, MgTiO₃, ZrTiO₂, SnTiO₄, Al₂TiO₅, FeTiO₃Is mentioned.
[0075]
As zirconium oxide, ZrO₂Examples of the zirconate compound include BaZrO.₃, ZrSiO₄, PbZrO₃MgZrO₃, K₂ZrO₃Is mentioned.
[0076]
Further, it is preferable to use silicon containing nitrogen. This is because when nitrogen-containing silicon is used for the peeling layer, nitrogen is released with light irradiation, and this promotes peeling in the peeling layer.
[0077]
Material C.I. Ceramics or dielectrics such as PZT, PLZT, PLLZT, PBZT (ferroelectric)
[0078]
Material D. Nitride ceramics such as silicon nitride, aluminum nitride, titanium nitride
[0079]
Material E. Organic polymer materials Organic polymer materials include -CH-, -CO- (ketone), -CONH- (amide), -NH- (imide), -COO- (ester), -N = N- (azo ), -CH = N- (Schiff) and the like (these bonds are cleaved by light irradiation), in particular, any of those having many of these bonds. The organic polymer material may have an aromatic hydrocarbon (one or more benzene rings or condensed rings thereof) in the structural formula.
[0080]
Specific examples of such organic polymer materials include polyolefins such as polyethylene and polypropylene, polyimide, polyamide, polyester, polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), polyethersulfone (PES), epoxy resin, and the like. Is mentioned.
[0081]
Material F. metal
Examples of the metal include Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, Sm, or an alloy containing at least one of them.
[0082]
In addition, the peeling layer 11 can also be comprised with a hydrogen containing alloy. This is because when a hydrogen-containing alloy is used for the release layer, hydrogen is released with light irradiation, which promotes release in the release layer.
[0083]
Moreover, the peeling layer 11 can also be comprised with a nitrogen-containing alloy. This is because, when a nitrogen-containing alloy is used for the peeling layer, nitrogen is released with light irradiation, and this promotes peeling in the peeling layer.
[0084]
Further, the release layer 11 can be made of a multilayer film. The multilayer film can be made of, for example, an amorphous silicon film and a metal film formed thereon. The material of the multilayer film can be composed of at least one of the ceramics, metals, and organic polymer materials described above. If the release layer is configured as a multilayer film or a film made of a combination of different materials in this way, the release in the separation layer is promoted by the release of hydrogen gas or nitrogen gas upon irradiation with light, as in the case of amorphous silicon. Because.
[0085]
The thickness of the release layer 11 varies depending on various conditions such as the purpose of release, the composition of the release layer, the layer configuration, and the formation method, but it is usually preferably about 1 nm to 20 μm, and preferably about 10 nm to 2 μm. More preferably, it is about 40 nm to 1 μm. The greater the thickness of the release layer 11, the more uniform the film formation and the less the unevenness in the release. On the other hand, the thinner the film thickness, the light power for ensuring good release properties of the release layer 11. This is because the (light quantity) can be small, and the time required for the work when the release layer 11 is removed later becomes smaller. Note that the thickness of the release layer 11 is preferably as uniform as possible.
[0086]
The formation method of the peeling layer 11 is not specifically limited, It selects suitably according to various conditions, such as a film composition and a film thickness. For example, CVD (including MOCVD, low pressure CVD, ECR-CVD), vapor deposition, molecular beam vapor deposition (MB), sputtering, ion plating, PVD and other various vapor deposition methods, electroplating, immersion plating (dipping), Various plating methods such as electroless plating, Langmuir Projet (LB) method, spin coating, spray coating, roll coating and other coating methods, various printing methods, transfer methods, inkjet coating methods, powder jet methods, etc. Two or more of these can also be formed in combination.
[0087]
For example, when the composition of the release layer 11 is amorphous silicon (a-Si), it is preferable to form the film by CVD, particularly low-pressure CVD or plasma CVD.
[0088]
In the case where the release layer 11 is composed of ceramics by a sol-gel method or an organic polymer material, it is preferable to form a film by a coating method, particularly spin coating.
[0089]
Although not shown in FIG. 2, an intermediate layer for the purpose of improving the adhesion between the transfer source substrate 10 and the release layer 11 is provided between the transfer source substrate 10 and the release layer 11 according to the properties of the transfer source substrate 10 and the release layer 11. May be provided. This intermediate layer prevents migration of components to or from the protective layer, insulating layer, transferred layer, or the like, which physically or chemically protect the transferred layer during manufacture or use, for example. It exhibits at least one of the functions as a barrier layer and a reflective layer.
[0090]
The composition of the intermediate layer can be appropriately selected according to the purpose. For example, in the case of an intermediate layer formed between a release layer made of amorphous silicon and a transfer layer, SiO₂And the like. Examples of the composition of the other intermediate layer include metals such as Pt, Au, W, Ta, Mo, Al, Cr, Ti, or alloys containing these as main components.
[0091]
The thickness of the intermediate layer is appropriately determined according to the purpose of formation. Usually, the thickness is preferably about 10 nm to 5 μm, and more preferably about 40 nm to 1 μm. The larger the thickness of the intermediate layer, the more uniform the film formation and the less the unevenness in adhesion, while the thinner the film thickness, the less the attenuation of light that should be transmitted to the release layer. is there.
[0092]
As a method for forming the intermediate layer, various methods described in the release layer can be applied. In addition to forming the intermediate layer as a single layer, two or more layers can be formed using a plurality of materials having the same or different compositions.
[0093]
(Transfer to be transferred forming step: ST102)
Next, as shown in FIG. 2: ST102, a transfer body layer 12 including a plurality of transfer bodies 12a is formed on the release layer 11. Each transferred object 12a is a circuit formed of a thin film transistor, other active elements, passive elements, or a combination thereof. The transferred body 12a is an individual element or a chip having an independent function such as an integrated circuit, or does not perform an independent function between the two, but can be independently combined with other elements and circuits. It may be a part of a functioning circuit. Therefore, there is no limitation on the structure and size. In addition to forming a plurality of elements or circuits having the same function, each transferred object 12a may be formed by forming a plurality of elements or circuits having different functions, or by forming a plurality of different types of elements or circuits. Good.
[0094]
In any case, since the transfer object 12a is formed on the same substrate, it can be manufactured by the same manufacturing process.
[0095]
In this embodiment mode, in particular, the transfer target is a thin film element or an integrated circuit including a thin film element. Such a thin film element requires a certain high temperature process in the manufacturing process, and the base material on which the thin film element is formed needs to satisfy various conditions like a transfer source substrate. On the other hand, it is conceivable that the final substrate to be commercialized is, for example, a flexible substrate having flexibility. As described above, in the manufacture of the thin film element, there is a possibility that the requirements required for the transfer destination substrate and the conditions required for the substrate for manufacturing the thin film element may conflict with each other, but if the manufacturing method of the present invention is applied, the manufacturing condition is satisfied. After the thin film element is manufactured with the substrate, the thin film element can be transferred to a transfer destination substrate that does not satisfy the manufacturing conditions.
[0096]
As an example of such a thin film element, in addition to a thin film transistor, for example, a thin film diode, a photoelectric conversion element (photosensor, solar cell) made of a silicon PIN junction, a silicon resistance element, other thin film semiconductor devices, electrodes (examples) : ITO, transparent electrodes such as mesa film), switching elements, memories, actuators such as piezoelectric elements, micromirrors (piezo thin film ceramics), magnetic recording thin film heads, coils, inductors, resistors, capacitors, thin film highly permeable materials and There are micro magnetic devices, filters, reflective films, dichroic mirrors, etc. that combine them.
[0097]
FIG. 3A is a cross-sectional view of a thin film transistor T which is an example of a transfer target 12a used in the present embodiment. The thin film transistor T is formed on the peeling layer 11 with the intermediate layer 13 interposed therebetween, and includes a gate insulating film 14, a gate electrode 16, an interlayer insulating film 15, an electrode 17 made of aluminum or the like, a channel region 18, and a polysilicon layer. Are provided with a source / drain region 19 formed by introducing an n-type impurity. The thin film transistor T is not limited to such a configuration, and various structures such as a silicon-based transistor and SOI (silicon on insulator) can be applied.
[0098]
The intermediate layer 13 is SiO₂Use a membrane. Other intermediate layers include Si₃N₄Other insulating films can also be used. The thickness of the intermediate layer 13 is appropriately determined according to the purpose of formation and the function that can be exhibited, but it is usually preferably about 10 nm to 5 μm, and more preferably about 40 nm to 1 μm. The intermediate layer is formed for various purposes, and includes, for example, a protective layer, an insulating layer, a conductive layer, a laser light shielding layer, and a migration prevention barrier that physically or chemically protect the transfer target (thin film element) 12a. At least one of the functions as a layer and a reflective layer is exhibited.
[0099]
In some cases, the intermediate layer 13 may not be formed, and the transfer target (thin film element) 12a may be formed directly on the release layer 11.
[0100]
FIG. 3B and FIG. 3C are integrated circuits that are manufactured by the transfer method of the present invention and are configured by integrating thin film elements as an example of the transfer target 12a used in the present embodiment. A static RAM is shown.
[0101]
As shown in FIG. 3C, the integrated circuit 200 includes a memory cell array 201, an address buffer 202, a row decoder 203, a word driver 204, an address buffer 205, a column decoder 206, a column selection switch 207, and an input / output circuit 208. And each block of the control circuit 209. In each block, a circuit centering on a thin film transistor is formed, and a wiring is formed between the blocks by patterning a metal layer.
[0102]
FIG. 3B is a cross-sectional view of the integrated circuit 200 in the 3B-3B cross section of FIG. 3C, and shows the vicinity where the p-type MOS transistor Tp and the n-type MOS transistor Tn are formed. As shown in the cross-sectional view, a transfer target layer 12 is formed on the release layer 11. The transferred layer 12 includes a silicon layer 13 as a base, a wiring layer 210 on which a layer structure of a large number of elements and wirings is formed, a protective layer 217 for protecting the upper surface, and the like.
[0103]
A circuit is formed in the wiring layer 210 by a well region 211, a semiconductor region 212 into which impurities are introduced, a source or drain, a gate insulating film 214, a gate wiring film 213, an interlayer insulating film 215, a metal wiring layer 216, and the like. ing. The protective layer 217 is a film for protecting the wiring layer 210. Various circuit configurations of the integrated circuit 200 are conceivable. In addition to those related to such a memory circuit, application to a pixel driving circuit for a display device which is an electro-optical device, for example, is conceivable. As described above, as the transfer target 12a, an integrated circuit configured to exhibit a certain function by a combination of elements as well as individual elements can be applied.
[0104]
FIG. 4 illustrates a method for manufacturing the thin film transistor T as described with reference to FIG. 3A as a method for manufacturing the transfer target 12a.
[0105]
First, as shown in ST110, the transfer source substrate 10 is made of SiO.₂A film is deposited to form the intermediate layer 13. SiO₂Examples of the film forming method include known methods such as plasma chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), and sputtering. For example, the intermediate layer 13 having a thickness of 1 μm is formed by using the PECVD method. Next, a semiconductor film 18 is formed by applying a known method such as LPCVD. The semiconductor film 18 is patterned to form a semiconductor region of the thin film transistor.
[0106]
Next, as shown in ST111, SiO₂The insulating film 14 is formed by a predetermined manufacturing method, for example, an electron cyclotron resonance PECVD method (ECR-CVD method), a parallel plate PECVD method, or an LPCVD method. This insulating film 14 functions as a gate insulating film of the thin film transistor.
[0107]
Next, as shown in ST112, after forming a metal thin film of a predetermined gate metal, for example, tantalum or aluminum, by sputtering, the gate electrode 16 is formed by patterning. Then, using the gate electrode 16 as a mask, impurity ions serving as donors or acceptors are implanted, and the source / drain regions 19 are formed in a self-aligned manner with respect to the gate electrode 16. For example, in order to manufacture an NMOS transistor, phosphorus (P) is used as an impurity element at a predetermined concentration, for example, 1 × 10.¹⁶cm^-2Into the source / drain regions at a concentration of Thereafter, an appropriate energy is applied, for example, an XeCl excimer laser is irradiated with an irradiation energy density of 200 to 400 mJ / cm.²The impurity element is activated by irradiating at a temperature of about 250 ° C. to 450 ° C.
[0108]
Next, as shown in ST113, about 500 nm of SiO2 is deposited on the upper surfaces of the insulating film 14 and the gate electrode 16 by a predetermined method such as PECVD.₂A film 15 is formed. Next, a contact hole reaching the source / drain region 19 is formed in SiO.₂A source / drain electrode 17 is formed by depositing aluminum or the like on the films 14 and 15 and depositing aluminum or the like on the contact holes and the peripheral portions of the contact holes by a predetermined method such as sputtering.
[0109]
(Transfer to be transferred separation step: ST103)
Next, as shown in FIG. 2: ST103, the transferred object layer 12 is divided into transferred object 12a units such as elements and circuits. Specifically, the transfer object layer 12 and the release layer 11 are completely separated by etching the peripheral region of the transfer object 12a. For the etching, wet etching or dry etching is used. By etching, a groove 12c is formed around the transferred object 12a, and each transferred object 12a is left in an island shape. By providing such a groove, if the bonding force of the release layer 11 corresponding to one transferred object 12a is weakened, it is possible to reliably select only the transferred object and cleanly remove the transferred object. It is possible to prevent the transfer body from being destroyed during peeling. In addition, it is possible to prevent the rupture of the transferred material layer 12 due to peeling from reaching the adjacent region. In addition, by making a cut in the film thickness direction, it is possible to peel off the transferred body 12a even when the bonding force of the temporary fixing means for temporarily fixing the specific transferred body 12a is weak. . In addition, since the appearance of the area to be transferred is clear, alignment between the substrates during transfer is easy.
[0110]
FIG. 5 shows a modification of the method for separating each transferred object 12 a in the transferred layer 12. The separation process of the transferred object only needs to achieve the purpose of selectively separating the individual transferred objects, and can be modified within a range where the objective can be achieved.
[0111]
For example, as shown in FIG. 5A, instead of completely separating the transfer target layer 12 and the release layer 11 by etching, only the transfer target layer 12 may be etched into an island shape. . If energy can be applied evenly to the region where the transfer body 12a is formed, the release layer 11 in this region can be reliably peeled off, so that even if the release layer 11 itself is not cracked, the desired coverage can be obtained. Only the transfer member can be peeled off.
[0112]
Further, as shown in FIG. 5 (b), the transferred body 12a can be left in an island shape by etching halfway through the release layer 11. According to such separation, separation of the release layer can be clearly generated along the etching groove.
[0113]
Further, as shown in FIG. 5 (c), by strengthening etching, particularly wet etching, each transferred object 12a and the release layer 11 immediately below it may be left in the shape of an island. By over-etching the release layer 11, the area of the release layer is reduced, so that when the release layer 11 is irradiated with light and peeled, the release layer 11 can be reliably peeled off with a small force. This is because the amount of light energy required can be reduced.
[0114]
On the other hand, as shown in FIG. 5D, it is possible to cut halfway through the transferred material layer 12 by etching. Separation is possible even if the groove 12c is relatively shallow, as long as the transferred layer 12 is thin and can be broken by a mechanical peeling force due to temporary fixing. In such a separation, a rupture occurs along the periphery of the transfer target 12a. Therefore, in order not to affect the elements and circuits, a forbidden area where no elements or circuits are provided is formed along the periphery of the rupture line. It is preferable to keep.
[0115]
Alternatively, as shown in FIG. 5E, a protrusion 10b that rises along the outer periphery of the transfer target region is formed on the surface of the transfer source substrate 10. Such a convex structure is generated in the release layer 11 (11b) and also generated in the transferred material layer 12 (12b). Such a structure weakens the continuity between adjacent transferred bodies, and makes it easier to break the transferred body layer 12 along the region partitioned by the structure. A concave structure may be used instead of the convex structure.
[0116]
Alternatively, the transfer layer 12 may be formed after the release layer 11 is formed on the transfer source substrate 10 having the convex structure and the surface of the release layer is flattened by etch back or the like.
[0117]
(Peeling process: ST104)
Next, as shown in FIG. 2: ST104, the transfer layer 12a to be transferred is supported by selectively irradiating the light L to the release layer 11 in the region corresponding to the transfer target 12a to be transferred. The peeling layer 11 is peeled (in-layer peeling and / or interface peeling).
[0118]
The principle that peeling within the peeling layer 11 and / or interfacial peeling occurs is that ablation occurs in the constituent material of the peeling layer 11, the gas contained in the peeling layer 11 is released, and further, melting occurs immediately after irradiation. This is due to phase change such as transpiration.
[0119]
Here, the ablation means that the fixing material that absorbs the irradiation light (the constituent material of the release layer 11) is excited photochemically or thermally, and the surface or internal atom or molecule bond is cut and released. In general, all or part of the constituent material of the release layer 11 appears as a phenomenon that causes a phase change such as melting and transpiration (vaporization). In addition, the phase change may result in a fine foamed state, resulting in a decrease in bonding strength.
[0120]
Whether the peeling layer 11 causes in-layer peeling, interfacial peeling, or both depends on the composition of the peeling layer 11 and various other factors, and irradiation is performed as one of the factors. Conditions such as the type of light, wavelength, intensity, and reaching depth are included.
[0121]
The light L to be irradiated may be any as long as it causes the release layer 11 to undergo in-layer peeling and / or interfacial peeling. For example, X-rays, ultraviolet rays, visible light, infrared rays (heat rays), laser light, millimetres Wave, microwave, electron beam, radiation (α ray, β ray, γ ray) and the like.
[0122]
Among these, a laser beam is preferable because it is easy to cause peeling (ablation) of the peeling layer 11 and local irradiation with high accuracy is possible. The laser light is coherent light, and is suitable for causing the peeling portion to be peeled off with high accuracy by irradiating the peeling layer with the high-power pulse light through the transfer source substrate 10. Therefore, the transfer object 12a can be peeled off easily and reliably by using the laser beam.
[0123]
Examples of laser devices that generate this laser beam include various gas lasers, solid-state lasers (semiconductor lasers), and the like. Excimer lasers, Nd-YAG lasers, Ar lasers, CO lasers, etc.₂A laser, a CO laser, a He—Ne laser, or the like is preferably used.
[0124]
As this laser beam, a laser beam having a wavelength of 100 nm to 350 nm is preferable. By using the short-wavelength laser light in this way, the light irradiation accuracy can be improved and the peeling in the peeling layer 11 can be effectively performed.
[0125]
An example of laser light that satisfies the above-described conditions is an excimer laser. An excimer laser is a gas laser capable of outputting high-energy laser light in the short wavelength ultraviolet region, and a rare gas (Ar, Kr, Xe, etc.) and a halogen gas (F₂, HCl, etc.) can be used to output laser light having four typical wavelengths (XeF = 351 nm, XeCl = 308 nm, KrF = 248 nm, ArF = 193 nm). Since the excimer laser outputs high energy in a short wavelength region, it can cause ablation to occur in the release layer 11 in an extremely short time. The peeling layer 11 can be peeled without causing deterioration or damage to the film.
[0126]
Alternatively, when the separation layer 11 is given separation characteristics by causing a phase change such as outgassing, vaporization, and sublimation, the wavelength of the irradiated laser light is preferably about 350 to 1200 nm.
[0127]
Laser light of such a wavelength can use a laser light source and an irradiation device widely used in general processing fields such as YAG and gas laser, and light irradiation can be performed inexpensively and easily. In addition, by using laser light having a wavelength in such a visible light region, it is sufficient that the transfer source substrate 10 is visible light-transmitting, and the degree of freedom in selecting the transfer source substrate 10 can be expanded.
[0128]
The energy density of the irradiated laser beam, particularly the energy density in the case of an excimer laser, is 10 to 5000 mJ / cm.²It is preferable to be about 100 to 500 mJ / cm.²More preferably, it is about. The irradiation time is preferably about 1 to 1000 nsec, more preferably about 10 to 100 nsec. As the energy density is higher or the irradiation time is longer, ablation or the like is more likely to occur. On the other hand, as the energy density is lower or the irradiation time is shorter, the irradiated light transmitted through the release layer 11 is adversely affected. This is because the risk of influence can be reduced.
[0129]
As a countermeasure when the irradiation light transmitted through the peeling layer 11 reaches the transferred body 12a and has an adverse effect, for example, there is a method of forming a metal film such as tantalum (Ta) on the peeling layer 11. Thereby, the laser light transmitted through the peeling layer 11 is completely reflected at the interface of the metal film, and does not adversely affect the transfer target 12a above it.
[0130]
Irradiation light represented by laser light is preferably irradiated so that its intensity is uniform. The irradiation direction of the irradiation light is not limited to the direction perpendicular to the release layer 11 and may be a direction inclined by a predetermined angle with respect to the release layer 11.
[0131]
Moreover, when the area of the peeling layer 11 is larger than the irradiation area of one irradiation light, the entire area of the peeling layer 11 can be irradiated with irradiation light in a plurality of times. Moreover, you may irradiate the same location twice or more. Further, irradiation light (laser light) of different types and different wavelengths (wavelength regions) may be irradiated twice or more to the same region or different regions.
[0132]
(Temporary fixing step: ST105)
Next, as shown in FIG. 2: ST105, the transfer target 12a to be peeled off by the temporary fixing means V is temporarily fixed and peeled off from the transfer source substrate 10. Specifically, the temporary fixing means V is brought into contact with the transfer body 12a to be peeled off. Then, the transferred body 12a is temporarily fixed by suction or suction to the temporary fixing means V, and then the temporary fixing means V is moved (raised) to peel the transferred body 12a from the transfer source substrate 10.
[0133]
As the temporary fixing means V, vacuum tweezers are used. The vacuum tweezers are hollow tweezers that are covered with resin including the tip and can be sucked from the tip by a vacuum pump. And tweezers for manual use. For example, vacuum tweezers C001-CX-100-97, C001-D-Y-161-92, etc. manufactured by Fluoro Mechanic are combined with vacuum pumps FV-30, FV-60, FV-TP, etc. Can be used. The vacuum tweezers require transport means for relatively transporting the sucked transfer target to the transfer destination substrate. The conveying means may move the transfer source substrate and the transfer destination substrate.
[0134]
As shown in FIG. 2: ST105, the peeling residue of the peeling layer 11 may adhere to the transfer source substrate 10 to which the transfer target 12a has been transferred, and it is desirable to completely remove this. A method for removing the remaining release layer 11 can be selected and employed as appropriate from, for example, methods such as cleaning, etching, ashing, and polishing, or a combination of these methods.
[0135]
Similarly, when the peeling residue of the peeling layer 11 is also attached to the bottom surface of the peeled transfer object 12a, it can be removed in the same manner as described above. As a result, after all the transfer target 12a has been peeled off, the transfer source substrate 10 can be reused (recycled). By reusing the transfer source substrate 10, it is possible to eliminate waste of manufacturing costs. This is particularly effective when the transfer source substrate 10 made of an expensive material such as quartz glass or a rare material is used.
[0136]
In this embodiment, the peeling step (ST104) is performed before the temporary fixing step (ST105). However, the peeling and temporary fixing may be performed in the reverse order or simultaneously.
[0137]
(Transfer process: ST106)
Next, as shown in FIG. 2: ST106, the temporarily fixed transfer target 12a is transferred to the transfer destination substrate 20. Before that, the adhesive layer 21 is supplied in advance to the transfer destination substrate 20.
[0138]
Although it does not specifically limit as the transfer destination board | substrate 20, A board | substrate (plate material), especially a transparent substrate are mentioned. Such a substrate may be a flat plate or a curved plate. Further, the transfer destination substrate 20 may be inferior to the transfer source substrate 10 in characteristics such as heat resistance and corrosion resistance. The reason for this is that in the present invention, the transfer target substrate 12a is formed on the transfer source substrate 10 side, and then the transfer target 12a is transferred to the transfer destination substrate 20. This is because the property does not depend on the temperature condition at the time of forming the transfer target 12a.
[0139]
Therefore, when the maximum temperature during formation of the transfer target 12a is Tmax, a material having a glass transition point (Tg) or a softening point equal to or lower than Tmax can be used as a constituent material of the transfer destination substrate 20. For example, the transfer destination substrate 20 can be made of a material having a glass transition point (Tg) or a softening point of preferably 800 ° C. or lower, more preferably 500 ° C. or lower, and further preferably 320 ° C. or lower.
[0140]
Further, the mechanical properties of the transfer destination substrate 20 are preferably those having a certain degree of rigidity (strength), but may be those having flexibility and elasticity. Thus, if an element such as a thin film transistor is transferred to a flexible transfer destination substrate, excellent characteristics that cannot be obtained with a highly rigid glass substrate can be realized. Accordingly, in the present invention, an electro-optical device that is flexible, light, and resistant to dropping can be realized by using a flexible transfer destination substrate and manufacturing an electro-optical device, for example.
[0141]
Examples of the constituent material of the transfer destination substrate 20 include various synthetic resins or various glass materials. Particularly, various synthetic resins and ordinary low melting point inexpensive glass materials are preferable. In particular, the soda glass substrate is a low cost and economically advantageous substrate. A soda glass substrate has a problem that an alkali component is eluted by a heat treatment at the time of manufacturing a thin film transistor. Conventionally, it has been difficult to apply the soda glass substrate to an electro-optical device such as an active matrix liquid crystal display device. However, according to the present invention, since the already completed element is transferred to the transfer destination substrate, the above-mentioned problems associated with the heat treatment are solved. Therefore, in the present invention, a substrate such as a soda glass substrate that has been difficult to use conventionally can be used in the field of an active matrix type electro-optical device.
[0142]
The synthetic resin may be either a thermoplastic resin or a thermosetting resin. For example, polyolefin such as polyethylene, polypropylene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA), cyclic polyolefin, modified Polyolefin, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, polyamideimide, polycarbonate, poly- (4-methylbenten-1), ionomer, acrylic resin, polymethyl methacrylate, acrylic-styrene copolymer (AS Resin), butadiene-styrene copolymer, polio copolymer (EVOH), polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyester such as polycyclohexane terephthalate (PCT), poly Ether, polyetherketone (PEK), polyetheretherketone (PEEK), polyetherimide, polyacetal (POM), polyphenylene oxide, modified polyphenylene oxide, polyarylate, aromatic polyester (liquid crystal polymer), polytetrafluoroethylene, polyfluoride Various types of thermoplastic elastomers such as vinylidene chloride, other fluororesins, styrene, polyolefin, polyvinyl chloride, polyurethane, fluororubber, chlorinated polyethylene, epoxy resin, phenol resin, urea resin, melamine resin, Saturated polyesters, silicone resins, polyurethanes, etc., or copolymers, blends, polymer alloys, etc. mainly composed of these, may be mentioned, and one or more of these may be combined (for example, two layers) As a laminate of the upper) it can be used.
[0143]
Examples of the glass material include silicate glass (quartz glass), alkali silicate glass, soda lime glass, potash lime glass, lead (alkali) glass, barium glass, borosilicate glass, and the like. Of these, glass other than silicate glass is preferable because it has a lower melting point than silicate glass, is relatively easy to mold and process, and is inexpensive.
[0144]
When the transfer destination substrate 20 made of synthetic resin is used, a large transfer destination substrate can be integrally formed, and even if it has a complicated shape such as a curved surface or an uneven surface. It can be easily manufactured, and various advantages such as low material cost and low manufacturing cost can be obtained. Therefore, the use of a synthetic resin is advantageous in manufacturing a large and inexpensive device (for example, a liquid crystal display).
[0145]
The transfer destination substrate 20 is a device that forms an independent device, such as a liquid crystal cell, or a device such as a color filter, an electrode layer, a dielectric layer, an insulating layer, or a semiconductor element. It may constitute a part.
[0146]
Further, the transfer destination substrate 20 may be a substance such as metal, ceramics, stone, or wood paper, or on an arbitrary surface constituting a certain item (on a watch surface, on an air conditioner surface, on a printed circuit board). Etc.), and further on the surface of a structure such as a wall, pillar, ceiling, or window glass.
[0147]
An adhesive layer 21 is provided in advance in such a region on the transfer destination substrate 20 where the transfer target 12a is to be transferred. Preferable examples of the adhesive constituting the adhesive layer 21 include various curable types such as a reactive curable adhesive, a thermosetting adhesive, a photocurable adhesive such as an ultraviolet curable adhesive, and an anaerobic curable adhesive. An adhesive is mentioned. The composition of the adhesive may be any, for example, epoxy, acrylate, or silicone. When a commercially available adhesive is used, the adhesive used may be adjusted to a suitable viscosity for coating by adding an appropriate solvent.
[0148]
In the present embodiment, the adhesive layer 21 is formed only on the transfer target 12a to be transferred or only on the transfer destination substrate 20 corresponding to the transfer target 12a to be transferred. Such local formation of the adhesive layer 15 can utilize a printing method or an inkjet coating method. A liquid ejecting apparatus is used to perform the ink jet coating method. The structure of the liquid ejecting device can be divided into electrostatic drive type, piezo drive type, thermal drive type, etc. Among them, the piezo drive type liquid discharge method is the property of the adhesive because it discharges the material liquid without applying heat. There is no risk of changing. Therefore, it is preferable as an industrial purpose for applying a liquid to such a part. This piezo drive type head has a structure in which a piezoelectric element is provided on a diaphragm that forms the wall surface of the pressure chamber, and the diaphragm is deformed by applying a predetermined voltage to the piezoelectric element, thereby reducing the volume of the pressure chamber. And the liquid in the pressure chamber is discharged. When using the inkjet coating method, it is necessary to dissolve the adhesive in a suitable organic solvent and adjust the material solution so that the viscosity and surface tension can be discharged.
[0149]
The adhesive layer 21 is formed by moving the nozzle of the liquid ejecting apparatus to the transfer position of the transfer target 12a and discharging a material liquid containing an adhesive. If necessary, heat treatment / drying treatment for evaporating the organic solvent is performed. Note that the adhesive layer 21 may be formed on the transfer destination substrate 20 prior to the separation of the transfer target 12a.
[0150]
When the adhesive layer 21 is formed, the temporary fixing means V on which the transfer target is temporarily fixed is conveyed onto the adhesive layer 21 of the transfer destination substrate 20, and the transfer target is pressure-bonded to the adhesive layer 21. The adhesive force with the transfer target 12a is increased. Then, as shown in FIG. 2: ST107, the temporary fixing is released by releasing the suction of the temporary fixing means V. Through the above steps, the transfer of the one transfer target 12a to the transfer destination substrate 20 is completed.
[0151]
In the present embodiment, an adhesive (thermal fusion) sheet can be used as the adhesive layer 21 instead of applying an adhesive. A large number of such adhesive sheets are provided on, for example, a film tape, and can be supplied and used sequentially from a tape carrier on which the film tape is mounted. For example, the adhesive sheet can be attached to a corresponding portion of the transfer destination substrate 20 or attached to the bottom surface of the transferred object 12a being conveyed. The adhesive sheet is made of polyolefin resin (polyethylene, polypropylene, EVA, etc.), epoxy resin, fluorine resin, carboxyl group-containing acrylic resin, etc., hot melt resin polyester resin, acrylate resin, silicone resin, etc. It is formed by mixing one type or two or more types. The thickness of the adhesive sheet is 0.1 to 100 μm, preferably about 1 to 50 μm. Further, it is preferable that the area and shape of the adhesive sheet correspond to the size and shape of the transfer target 12a. Production efficiency can be increased by continuous supply of adhesive sheets using a tape carrier.
[0152]
In the first embodiment, when another transfer target 12a is transferred from the same transfer source substrate 10, the steps from the peeling step to the transfer step (ST104 to ST107) are repeated.
[0153]
In addition, the same process as the process performed on the first transfer source substrate 10 is repeated on other transfer source substrates (second transfer source substrate in FIG. 1). By these processes, the transfer target of the plurality of transfer source substrates is integrated on the transfer destination substrate without being selectively inverted.
[0154]
The transfer source substrates are not limited to the first and second transfer source substrates SUBA and SUBB, but may be three or more. Each transfer source substrate may be manufactured by a different manufacturing method. According to the present invention, it is possible to select an arbitrary number of transferred objects manufactured by different manufacturing processes and transfer them to one transfer source substrate.
[0155]
As described above, according to the first embodiment, an arbitrary number of objects to be transferred are selectively selected from a transfer source substrate on which objects to be transferred such as elements and circuits manufactured by the same or different manufacturing processes are integrated. By temporary fixing, it can be transferred to a predetermined position on the transfer destination substrate in the same direction. For this reason, it is possible to manufacture the assembly substrate by simply transferring the transfer body without using an intermediate transfer substrate for reversing the direction of the transfer body. Further, since the orientation of the transfer object does not change, electrode wiring and connection after transfer are easy.
[0156]
That is, according to the first embodiment, a transfer target such as an element or a circuit is used as a unit, including a transfer target having a different manufacturing process relatively easily without reversing the direction. It is possible to transfer to the same transfer destination substrate.
[0157]
In addition, according to the first embodiment, a large number of elements and circuits dispersed and arranged on the transfer destination base material at intervals are intensively manufactured on the transfer source base material, and these are transferred to the transfer destination base material. Compared with conventional circuit boards that are manufactured by forming elements directly on the substrate, the area efficiency in the manufacture of elements such as thin film transistors can be greatly improved. A substrate can be provided at low cost.
[0158]
In addition, since many elements and circuits are manufactured intensively on the transfer source substrate and then transferred to the transfer destination substrate, the elements and circuits once manufactured in the manufacturing process such as heat are damaged. Finally, it can be mounted on the transfer destination base material, and the performance of the circuit board can be improved. Further, it becomes possible to easily select and eliminate elements and circuits before transfer, and as a result, the product yield can be improved.
[0159]
Furthermore, the followability to the bending of the substrate is improved by accurately arranging minute elements and circuits at predetermined positions of the final transfer destination base material, and by using a flexible transfer destination base material, it is flexible. It is possible to provide an active matrix display device that is light and resistant to dropping. Further, a circuit board having a curved surface such as a curved display can be provided.
[0160]
<Second Embodiment>
In the second embodiment of the present invention, a plurality of transfer source substrates, which are manufactured in the same manufacturing process but are formed with a plurality of types of transferred bodies having different structures, are prepared in correspondence with the manufacturing process. Is a circuit board manufacturing method in which one or more transferred objects are selectively peeled off by suction from the transfer source substrate and transferred to the transfer destination substrate.
[0161]
FIG. 6 shows a schematic diagram of a circuit board manufacturing method according to the second embodiment.
The second embodiment relates to a method for continuously manufacturing a circuit board, as in the first embodiment. That is, as shown in FIG. 6, a step of supplying the transfer destination substrates SUBD one by one (S20), a step of peeling and transferring the transfer object by a transfer method described later (S21 to S25), and a transfer after transfer By repeating the step (S26) of discharging the previous substrates SUBD one after another, the transfer destination substrates SUBD1 to n are sequentially supplied and manufactured.
[0162]
The second embodiment is the same as the first embodiment in that the first transfer source substrate SUBA and the second transfer source substrate SUBB, which have different manufacturing processes, are used. The difference is that a plurality of types of transferred objects are also formed on the substrate. That is, on the first transfer source substrate SUBA, a plurality of transfer bodies Sa1, Sa2, and Sa3 are formed in advance in a plurality of regions A1, A2, and A3, respectively. On the second transfer source substrate SUBB, a plurality of transfer bodies Sb1 and Sb2 are formed in advance in a plurality of regions B1 and B2, respectively.
[0163]
Basically, the transfer / peeling in the second embodiment is performed in the same manner as the transfer / peeling in the first embodiment.
[0164]
FIG. 6 shows an example of manufacturing an assembly substrate in which transferred objects are integrated one by one from each region. For this purpose, after supplying the transfer destination substrate SUBD, any one first transfer target Sa1 is selectively temporarily fixed and peeled off from the area A1 of the first transfer source substrate SUBA and predetermined on the transfer destination substrate SUBD. Step (S21) of transferring to the position Pa1 is performed, and any one first transfer target Sa2 is selectively temporarily fixed and peeled from the area A2 of the first transfer source substrate SUBA, and predetermined on the transfer destination substrate SUBD. Transferring to the position Pa2 (S22), and selectively fixing and peeling off any one first transferred body Sa3 from the area A3 of the first transfer source substrate SUBA, and predetermining on the transfer destination substrate SUBD. In the step of transferring to the position Pa3 (S23), peeling / transfer is performed from the first transfer source substrate.
[0165]
Further, the step of selectively temporarily fixing and peeling off any one second transferred object Sb1 from the region B1 of the second transfer source substrate SUBB and transferring it to a predetermined position Pb1 on the transfer destination substrate SUBD (S24). ) Step of selectively temporarily fixing and peeling off any one second transferred body Sb2 from the region B2 of the second transfer source substrate SUBB and transferring it to a predetermined position Pb2 on the transfer destination substrate SUBD (S25). ) To peel and transfer from the second transfer source substrate.
[0166]
The details of the method for forming the transfer target and the separation / transfer process in each of the first transfer source substrate SUBA and the second transfer source substrate SUBB are the same as those in the first embodiment, and thus the description thereof is omitted.
[0167]
It should be noted that the process of forming the transfer bodies Sa1 to Sa3 or Sb1 and Sb2 on the transfer source substrate SUBA or SUBB may be performed first or simultaneously.
[0168]
The transfer members Sa1 to Sa3 or Sb1 and Sb2 are peeled off by the temporary fixing means Ha or Hb as in the first embodiment. The temporary fixing means Ha or Hb is brought into contact with the transferred bodies Sa1 to Sa3 or Sb1 and Sb2, and sucked by the temporary fixing means to temporarily fix the transferred body, so that the transferred bodies Sa1 to Sa3 or Sb1 and Sb2 This is achieved by moving (raising) the temporarily fixed means Ha or Hb that has been temporarily fixed to peel off the transfer target from the transfer source substrate.
[0169]
In addition, the transfer of the transfer bodies Sa1 to Sa3 or Sb1 and Sb2 is performed by supplying a bonding means (not shown) to the transfer destination substrate SUBA or SUBB, and temporarily fixing means Ha or Hb to a predetermined position Pa1 of the transfer destination substrate SUBA or SUBB. Temporary fixing is achieved by releasing the suction of the temporary fixing means Ha or Hb transported to Pa3 or Pb1 or Pb2 and bonded to the object to be transferred, and transported the bonded objects Sa1 to Sa3 or Sb1 or Sb2. Achieved by lifting.
[0170]
It should be noted that the process of forming the transfer bodies Sa1 to Sa3 or Sb1 and Sb2 on the transfer source substrate SUBA or SUBB may be performed first or simultaneously. Similarly, the material to be transferred Sa1 to Sa3 or Sb1 and Sb2 may be peeled off or transferred first or simultaneously. The temporary fixing means may also be used to peel and transfer the transferred objects Sa1 to Sa3 or Sb1 and Sb2 in order. In addition, a predetermined pattern may be provided in advance on the transfer destination substrate SUBD.
[0171]
Further, the number of transfer source substrates is not limited to the first and second transfer source substrates SUBA and SUBB, but may be three or more. Each transfer source substrate may be manufactured by a different manufacturing method. According to the present invention, it is possible to select an arbitrary number of transferred objects manufactured by different manufacturing processes and transfer them to one transfer source substrate.
[0172]
As described above, according to the second embodiment, there are basically the same functions and effects as those of the first embodiment.
In particular, according to the second embodiment, since a plurality of types of transferred objects formed in the same process are formed on the transfer source substrate, a plurality of types of transferred objects are selected and arranged. Therefore, it is possible to easily manufacture an assembly substrate in which a plurality of types of elements and circuits are integrated.
[0173]
<Third Embodiment>
In the third embodiment of the present invention, energy is applied to a part or all of a transfer source substrate including a plurality of transfer target objects to be peeled, and the transfer target included in the part or all of the area is transferred. The present invention relates to a method for manufacturing a circuit board for peeling one or more bodies. This is different from the first embodiment in which energy is supplied to each transferred body and peeling is performed.
[0174]
The manufacturing method of the present embodiment will be described with reference to the manufacturing process sectional view according to the third embodiment shown in FIG.
The peeling layer forming step (S201), the transferred object forming step (ST202), and the transferred object separating step (ST203) are the same as those in the first embodiment, and a description thereof is omitted.
[0175]
(Peeling process: ST204)
In the peeling process according to the third embodiment, as shown in FIG. 7: ST204, a certain region of the transfer source substrate 10 is irradiated with light L over the entire surface, and the entire peeling layer 11 is peeled (inside the layer). Peeling and / or interfacial peeling).
[0176]
The light L to be irradiated may be any light as long as it causes in-layer peeling and / or interfacial peeling in the peeling layer 11 as in the first embodiment, for example, X-rays, ultraviolet rays, visible Light, infrared rays (heat rays), laser beams, millimeter waves, microwaves, electron beams, radiation (α rays, β rays, γ rays) and the like, and predetermined laser beams are preferable.
[0177]
In particular, in this embodiment, since the irradiation area of the laser beam is wide, the laser beam may be irradiated in multiple times, or irradiation light (laser beam) of different types and different wavelengths (wavelength ranges) may be used. Different regions may be irradiated more than once.
[0178]
Here, a region where energy is applied to cause peeling is determined according to how many transfer target materials are peeled and transferred from which region within which period. That is, immediately after energy is applied by laser light or the like, the release layer 11 is ablated and easily peeled off, but may be cured again as time passes. According to the present invention, since the transferred object is selectively transferred, it takes time to peel and transfer all transferred objects from the area to which energy is applied. Therefore, it is preferable that the region to which energy is applied at a time is kept in a region corresponding to a transfer target that can be transferred within a period in which the release state of the release layer 11 is maintained.
[0179]
However, the material of the release layer 11 has a property of causing irreversible peeling, and once the peeling has occurred, if there is no significant change in the peeling state over time, a wide area at a time. Energy may be applied to (for example, the entire region of the transfer source substrate) to cause peeling in the peeling layer.
[0180]
The temporary fixing step (ST205) and the transfer step (ST206 / ST207) by the temporary fixing means V are the same as those in the first embodiment, and a description thereof is omitted.
[0181]
As described above, according to the third embodiment, there are basically the same functions and effects as those of the first embodiment.
In particular, according to the third embodiment, since energy is applied to a part or all of the transfer source substrate, the time required for the peeling process is shortened compared to the case where energy is individually applied, and the manufacturing cost is reduced. Can be lowered.
[0182]
<Fourth embodiment>
The fourth embodiment of the present invention relates to an electro-optical device manufactured by the method for manufacturing a circuit board in each of the above embodiments.
FIG. 7 shows a substrate plan block diagram of the electro-optical device 1 according to the fourth embodiment. The electro-optical device 1 is configured by arranging a display area 4, a scanning line driving circuit 2, and a data line driving circuit 3 on a transfer destination substrate 20. The selection signal line Vsn is wired from the scanning line driving circuit 2 and the data line Idatam is wired from the data line driving circuit 3 to the display area 4 respectively. A pixel region Pmn is provided corresponding to a position where the selection signal line Vsn and the data line Idatam intersect, and constitutes an active matrix substrate. Each pixel region Pmn is provided with, for example, an EL element that can emit light by an electroluminescence effect and a peripheral circuit composed of a thin film transistor and the like. By controlling the selection signal line Vsn and the data line Idata, current programming is performed for each pixel region, and light emission by the EL element is controlled.
[0183]
Here, according to the circuit board manufacturing method of the present invention, each pixel region Pmn, the scanning line driving circuit 2 and the data line driving circuit 3 are manufactured on the same or different transfer source substrates and then individually peeled off. Thus, it can be arranged on the transfer destination substrate 20. Only the selection signal line and the data line may be formed on the transfer destination substrate 20 in advance.
[0184]
For example, since all the pixel regions Pmn can be formed by the same manufacturing process, they can be integrated and formed on one transfer source substrate. On the other hand, since the scanning line driving circuit 2 and the data line driving circuit 3 constitute a circuit mainly using thin film transistors, they can be formed on the same transfer source substrate. However, since the pixel region Pmn includes an EL element forming process, the manufacturing process is partially different from the scanning line driving circuit 2 and the data line driving circuit 3. For this reason, the pixel region is formed on the first transfer source substrate, and the scanning line driving circuit 2 and the data line drive circuit 3 are formed on the second transfer source substrate, and the necessary number of transfer is performed from each transfer source substrate. The electro-optical device 1 is manufactured by transferring these transferred objects onto the front substrate 20.
[0185]
As described above, according to the fourth embodiment, since the method for manufacturing a circuit board according to the present invention is applied, the same effects as those of the first embodiment can be obtained.
In particular, according to the fourth embodiment, the EL element can be mounted by transfer without causing thermal damage to the light emitting layer and the antireflection layer during manufacture of the EL element, and the substrate and the light emitting layer as in the past. Compared with the case where an element is formed between the elements, the element does not interfere with display, and thus the display performance is improved.
[0186]
<Fifth embodiment>
The fifth embodiment of the present invention relates to an electronic device using the circuit board manufactured by the above embodiment. FIG. 9 shows an example of an electronic device according to the fifth embodiment.
FIG. 9A shows an example of a circuit board manufactured by the method for manufacturing a circuit board of the present invention, for example, a mobile phone on which the electro-optical device 1 according to the fourth embodiment is mounted. An electro-optical device (display panel) 111, an audio output unit 112, an audio input unit 113, an operation unit 114, and an antenna unit 115 are provided.
[0187]
FIG. 9B shows an example of a video camera on which a circuit board (electro-optical device) manufactured by the manufacturing method of the present invention is mounted. The video camera 120 includes an electro-optical device (display panel) 121, an operation unit. 122, an audio input unit 123, and an image receiving unit 124.
[0188]
FIG. 9B is an example of a portable personal computer on which a circuit board (electro-optical device) manufactured by the manufacturing method of the present invention is mounted. The computer 130 includes an electro-optical device (display panel) 131, an operation. Unit 132 and camera unit 133. FIG. 9D shows an example of a head-mounted display on which a circuit board (electro-optical device) manufactured by the manufacturing method of the present invention is mounted. The head-mounted display 140 includes an electro-optical device (display panel) 141, An optical system storage unit 142 and a band unit 143 are provided.
[0189]
FIG. 9E shows an example of a rear projector on which a circuit board (electro-optical device) manufactured by the manufacturing method of the present invention is mounted. The projector 150 includes an electro-optical device (light modulator) 151, a light source. 152, a combining optical system 153, mirrors 154 and 155, and a screen 157 are provided in the housing 156.
[0190]
FIG. 9F shows an example of a front projector on which a circuit board (electro-optical device) manufactured by the manufacturing method of the present invention is mounted. The projector 160 includes an electro-optical device (image display source) 161 and an optical device. A system 162 is provided in the housing 163 so that an image can be displayed on the screen 164.
[0191]
The method for manufacturing a circuit board according to the present invention is not limited to the above example, and can be applied to the manufacture of any electronic device. For example, the present invention can be applied to a fax machine with a display function, a digital camera finder, a portable TV, a DSP device, a PDA, an electronic notebook, an electric bulletin board, an advertisement display, an IC card, and the like.
[0192]
As described above, according to the fifth embodiment, a plurality of elements to be transferred such as elements and circuits constituting an electronic device are formed on one transfer source substrate if they can be manufactured in the same process. If this manufacturing process is required, the substrate can be manufactured on another transfer source substrate, and the transfer target can be selectively sucked from each transfer source substrate and integrated on a circuit substrate for manufacturing an electronic device. For this reason, the present invention provides a simple method as a method of manufacturing an electronic device using a wide variety of elements and circuits.
[0193]
In addition, since the transfer method is used in the present invention, a large number of elements and circuits used in electronic devices distributed and arranged on the base material at intervals are intensively manufactured on the transfer source base material. Can be accurately transferred to a predetermined position on the transfer destination base material, so that the area efficiency in the manufacture of elements such as thin film transistors can be greatly improved compared to conventional electronic devices that are manufactured by forming elements directly on the substrate. .
[0194]
In addition, since many elements and circuits are manufactured on the transfer source base material in a concentrated manner and then transferred to the transfer destination base material, the manufactured elements and circuits are damaged in the manufacturing process such as heat. Finally, it can be mounted on the transfer destination base material, and the performance of the electronic device can be improved.
[0195]
Further, it becomes possible to easily select and eliminate elements and circuits before transfer, and as a result, the product yield can be improved.
[0196]
In addition, by accurately placing minute elements and circuits at predetermined positions on the final transfer destination base material, the followability to bending of the substrate is improved, and by using a flexible transfer destination base material, it is flexible and light. It is possible to provide an electronic device that is resistant to the impact of dropping. Furthermore, since an electronic device having a curved surface such as a curved display can be provided, the shape can be made impossible or difficult in the conventional product, and the degree of freedom in product design is expanded.
[0197]
<Other variations>
The above embodiment can be applied with various modifications within the scope of the present invention.
For example, as the peeling method, any method other than the peeling layer, the laser beam, and / or the temporary fixing means may be used as long as it can be easily peeled off. For example, the transfer target may be forcibly separated by the suction force of the temporary fixing means without using the release layer. Further, instead of using laser light, a thermoplastic resin or the like may be used for the peeling layer, and peeling may be performed by partially or entirely heating the transfer source substrate. In addition to vacuum tweezers, mechanical tweezers, electrostatic attraction devices, and magnet means using magnetic force can be used as temporary fixing means.
[0198]
Further, as a transfer method, bonding may be performed by a method other than an adhesive layer or an adhesive sheet. For example, if the layer to be transferred includes a terminal such as solder, after being placed on the transfer destination substrate, the solder is melted and then electrically connected to the transfer destination substrate by applying heat. At the same time, it is fixed mechanically.
[0199]
[Brief description of the drawings]
FIG. 1 is a schematic explanatory view of a circuit board manufacturing method according to a first embodiment.
FIG. 2 is a manufacturing process sectional view of the circuit board manufacturing method according to the first embodiment;
3A and 3B are an example of an element and a circuit of a transfer target, in which FIG. 3A is a cross-sectional view of a thin film transistor, FIG.
4 is a cross-sectional view of a manufacturing process of a thin film transistor which is a transfer target. FIG.
FIG. 5 shows a specific example of a separation structure.
FIG. 6 is a schematic explanatory view of a circuit board manufacturing method according to a second embodiment.
FIG. 7 is a manufacturing process cross-sectional view of a circuit board manufacturing method according to a third embodiment;
FIG. 8 is a plan view of an electro-optical device according to a fourth embodiment.
FIG. 9 shows an application example of an electronic apparatus according to a modification.
[Explanation of symbols]
SUBA, SUNBB ... transfer source substrate, SUBD ... transfer destination substrate, V ... suction means, a, b ... transferred body, 1 ... electro-optical device, 10 ... transfer source substrate, 11 ... release layer, 12 ... transferred body layer , 12a ... transferred object, 12c ... groove, 20 ... transfer destination substrate, 21 ... adhesive layer (adhesive means)

Claims (16)

A step of temporarily fixing and peeling one or more of the transferred bodies from each of a plurality of transfer source substrates on which a plurality of transferred bodies are formed;
And a step of transferring each of the transfer-destination substrates to a predetermined position. Temporarily fixing and peeling off any of the first transferred bodies from a first transfer source substrate on which a plurality of first transferred bodies are formed;
Transferring the peeled first transferred object to a predetermined position on the transfer destination substrate;
Temporarily fixing and peeling any of the second transferred bodies from a second transfer source substrate on which a plurality of second transferred bodies are formed;
Transferring the peeled second transferred object to a predetermined position of the transfer destination substrate. A method for manufacturing a circuit board, comprising: A step of temporarily fixing and temporarily separating one or more of the transferred bodies from a transfer source substrate on which a plurality of types of transferred bodies formed by the same manufacturing process are formed;
And a step of transferring each of the peeled one or more transferred objects to a predetermined position, respectively. In the manufacturing method of the circuit board according to claim 3,
A method for manufacturing a circuit board, wherein a plurality of transfer source substrates formed by different manufacturing processes are prepared, and one or more of the transferred objects are selectively peeled from each of the plurality of transfer source substrates. A step of temporarily fixing and temporarily separating one or more of the transferred objects from a first transfer source substrate on which a plurality of types of transferred objects manufactured by the first manufacturing process are formed;
Transferring each of the peeled one or more transferred objects to a predetermined position on the transfer destination substrate; and
One or more types of the objects to be transferred are temporarily fixed and selectively peeled from the second transfer source substrate on which a plurality of types of objects to be transferred manufactured by a second manufacturing process different from the first manufacturing process are formed. And a process of
And a step of transferring at least one of the peeled objects to be transferred to a predetermined position of the transfer destination substrate, respectively. In the manufacturing method of the circuit board as described in any one of Claims 1 thru | or 5,
The step of peeling off the transfer object includes
A step of bringing the temporary fixing means into contact with the transfer body to be peeled;
A step of temporarily fixing the object to be transferred by suctioning with the temporarily fixing means; and a step of moving the temporary fixing means to which the object to be transferred is temporarily fixed and peeling the object to be transferred from the transfer source substrate. And a method of manufacturing a circuit board. In the manufacturing method of the circuit board according to claim 6,
The step of transferring the transfer object includes
Supplying adhesive means to the transfer destination substrate;
Transporting the temporary fixing means on which the transferred body is temporarily fixed to a predetermined position of the transfer destination substrate and bonding the transferred body by the bonding means;
And a step of releasing the temporary fixing by releasing the suction of the temporary fixing means that transports the bonded transfer target body. In the manufacturing method of the circuit board according to claim 7,
The step of supplying the adhering means is a method of manufacturing a circuit board in which the adhering means is discharged from the liquid ejecting apparatus to a predetermined position by a predetermined amount. In the manufacturing method of the circuit board according to claim 7,
The step of supplying the bonding means is a circuit board manufacturing method in which the bonding means is applied to a part or all of the region including the position to be transferred of the transfer destination substrate. In the manufacturing method of the circuit board according to any one of claims 1 to 9,
Supplying the transfer destination substrate;
Transferring the transferred object to the transfer destination substrate by the method of manufacturing the circuit board;
By repeating the step of discharging the transfer destination substrate after the transfer,
A method for manufacturing a circuit board, in which new transfer destination substrates are sequentially supplied. In the manufacturing method of the circuit board according to any one of claims 1 to 10,
In the peeling of the transfer object, energy is applied to a partial area of the transfer source substrate corresponding to the transfer object to be peeled, and the transfer object corresponding to the partial area is peeled off. A method of manufacturing a circuit board. In the manufacturing method of the circuit board according to any one of claims 1 to 11,
In the peeling of the transferred object, energy is applied to a part or all of the transfer source substrate including the plurality of transferred objects to be peeled, and the transferred object included in the part or all of the area is transferred. A method for producing a circuit board, wherein one or more bodies are peeled off. In the manufacturing method of the circuit board according to any one of claims 1 to 12,
The transfer source substrate is
Forming a release layer on the transfer source substrate;
Forming a transferred material layer including the transferred material on the release layer, and a method of manufacturing a circuit board. In the manufacturing method of the circuit board according to claim 13,
A method for manufacturing a circuit board, further comprising a step of providing a separation structure for separating each of the transferred objects in the vicinity of a boundary of the transferred object with respect to the transferred object layer. An electro-optical device comprising a circuit board manufactured by the method for manufacturing a circuit board according to claim 1. An electronic device provided with the circuit board manufactured by the manufacturing method of the circuit board as described in any one of Claims 1 thru | or 14.

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