CN115491638A - Preparation method of broad-spectrum back anti-reflection film for detector chip - Google Patents
Preparation method of broad-spectrum back anti-reflection film for detector chip Download PDFInfo
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- CN115491638A CN115491638A CN202211064590.5A CN202211064590A CN115491638A CN 115491638 A CN115491638 A CN 115491638A CN 202211064590 A CN202211064590 A CN 202211064590A CN 115491638 A CN115491638 A CN 115491638A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000011248 coating agent Substances 0.000 claims abstract description 31
- 238000000576 coating method Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 25
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 19
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims abstract description 13
- XASAPYQVQBKMIN-UHFFFAOYSA-K ytterbium(iii) fluoride Chemical compound F[Yb](F)F XASAPYQVQBKMIN-UHFFFAOYSA-K 0.000 claims abstract description 13
- 239000007888 film coating Substances 0.000 claims abstract description 10
- 238000009501 film coating Methods 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 60
- 238000010438 heat treatment Methods 0.000 claims description 37
- 238000012360 testing method Methods 0.000 claims description 28
- 238000004544 sputter deposition Methods 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000011056 performance test Methods 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 2
- 238000001228 spectrum Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 238000012797 qualification Methods 0.000 abstract description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000005273 aeration Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Abstract
The invention provides a preparation method of a broad-spectrum back anti-reflection film for a detector chip, which comprises the following steps: placing a detector chip on a workpiece disc of a chamber, and vacuumizing the chamber; coating a film on the detector chip by using a film coating material and pre-configured process parameters, wherein the film coating material comprises zinc selenide and ytterbium fluoride; and after the chamber is cooled, taking out the detector chip after film coating is finished. The invention has at least the following advantages: the wide-spectrum back anti-reflection film of the mercury cadmium telluride infrared detector chip manufactured by adopting the zinc selenide and ytterbium fluoride composite film has smooth surface and no demoulding condition, and the performance of the detector is greatly improved; moreover, the performance of the infrared chip for preparing the broad-spectrum back anti-reflection film is improved, the surface of the film is smooth, the adhesive force and the firmness of the film meet the environmental requirements of using devices, the qualification rate of mass production of the devices is improved, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of infrared focal plane detector manufacturing, in particular to a preparation method of a wide-spectrum back anti-reflection film for a detector chip.
Background
With the rapid development of infrared technology, the requirements of various application fields such as remote sensing, space astronomy, industry and agriculture and the like on the working spectrum area of an infrared detector are more and more wide, and a single detector is required to cover the ranges of short, medium and long single wave bands and can achieve the effect of covering visible and near infrared areas, short waves and medium waves, medium waves and long waves and other multi-spectrum wave bands. Therefore, research and development and preparation of the high-transmittance and high-reliability wide-spectrum-band antireflection film layer are important development directions in the research field of future infrared detectors.
At present, a lot of researches on infrared wide-spectrum antireflection coating layers are conducted at home and abroad, but researches on visible light, near infrared, short and medium wave infrared, medium and long wave infrared and other double spectral bands are mainly focused, and the research on a back antireflection coating layer with a wider spectral band coverage range is rare.
Disclosure of Invention
The invention aims to solve the technical problem that the existing film layer structure can cover a smaller wave band range, and in view of the above, the invention provides a preparation method of a wide-spectrum back anti-reflection film for a detector chip.
The invention adopts the technical scheme that the preparation method of the broad-spectrum back anti-reflection film for the detector chip comprises the following steps: placing the detector chip on a workpiece disc of a chamber, and vacuumizing the chamber; coating the mercury cadmium telluride detector chip by using a coating material and pre-configured process parameters, wherein the coating material comprises zinc selenide and ytterbium fluoride; and taking out the tellurium-cadmium-mercury detector chip after film coating is finished.
In one embodiment, the plating material includes: zinc selenide and ytterbium fluoride with a transparent waveband of 0.4-9 microns and a refractive index of 2.6.
In one embodiment, the placing the detector chip on a workpiece tray of a chamber and performing a vacuum process on the chamber includes: placing the polished surfaces of the detector chip and the test accompanying sheet downwards on a workpiece disc of the chamber, closing a gate of the chamber, and vacuumizing the chamber; or the polished surfaces of the detector chip and the test accompanying sheet are placed on a workpiece disc of the chamber in an upward mode, a gate of the chamber is closed, and the chamber is vacuumized.
In one embodiment, when the probe chip and the test coupon are placed on a workpiece tray of the chamber with their polished faces facing down, the process parameters include: the vacuum degree of the chamber, the rotating speed of the workpiece disc, the heating temperature and the heating time of the workpiece disc, and the coating rate and the coating thickness of the coating material; when the detector chip and the test accompanying sheet are placed on the workpiece disc of the chamber with the polished surfaces facing upwards, the process parameters comprise: the vacuum degree of the chamber, the rotating speed of the workpiece disc, the heating temperature and the heating time of the workpiece disc, the sputtering power and the sputtering time of the coating material and the argon gas filling amount.
In one embodiment, when the polished surfaces of the detector chip and the test coupon are placed on a workpiece tray of the chamber downwards, and the vacuum degree of the chamber, the heating temperature of the workpiece tray and the heating time in the process parameters reach preset values, the detector chip is subjected to a thermal evaporation method or an electron beam evaporation method to prepare a film.
In one embodiment, when the polished surfaces of the detector chip and the test accompanying sheet are upwards placed on a workpiece disc of the chamber, and the vacuum degree of the chamber, the heating temperature of the workpiece disc and the heating time in the process parameters reach preset values, the detector chip is subjected to a sputter evaporation method to prepare a film.
In one embodiment, the method further comprises: and carrying out performance test on the detector chip.
The invention also provides a detector chip with the broad-spectrum back reflection-reducing film, which is prepared by any one of the above methods.
In one embodiment, the detector chip with a broad-spectrum anti-reflection film comprises: a readout circuit; the infrared chip is connected with the reading circuit, wherein one side, far away from the reading circuit, of the infrared chip is a polished surface made of mercury cadmium telluride, and the thickness of the mercury cadmium telluride is 8-10 micrometers; a thin film attached on the polished surface, wherein the thin film has a film system structure of 3.967H0.774L1.103H3.844L and a total thickness of
Another aspect of the invention provides an electronic device comprising a detector chip with a broad-spectrum back-reflection film as described in any one of the above.
By adopting the technical scheme, the invention at least has the following advantages:
1) The broad-spectrum back reflection-reducing film of the mercury cadmium telluride infrared detector chip manufactured by adopting the zinc selenide and ytterbium fluoride composite film has smooth surface and no film stripping, and the performance of the detector is greatly improved.
2) The infrared chip for preparing the broad-spectrum back anti-reflection film has improved performance, the surface of the film is smooth, the adhesive force and the firmness of the film meet the environmental requirements of using devices, the qualification rate of mass production of the devices is improved, and the cost is reduced.
Drawings
FIG. 1 is a flow chart of a method for preparing a broad-spectrum anti-reflection film for a detector chip according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a component structure of a detector chip with a broad-spectrum anti-reflection film according to an embodiment of the invention;
fig. 3 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined purposes, the present invention is described in detail below with reference to the accompanying drawings and preferred embodiments.
The description of the method flow in the present specification and the steps of the flow chart in the drawings of the present specification are not necessarily strictly performed by the step numbers, and the execution order of the method steps may be changed. Moreover, certain steps may be omitted, multiple steps may be combined into one step execution, and/or a step may be broken down into multiple step executions.
In a first embodiment of the present invention, a method for preparing a broad-spectrum anti-reflection film for a detector chip, as shown in fig. 1, includes the following steps:
s1, placing a detector chip on a workpiece disc of a chamber, and vacuumizing the chamber;
s2, coating a film on the detector chip by using a film coating material and pre-configured process parameters, wherein the film coating material comprises zinc selenide and ytterbium fluoride;
and S3, taking out the detector chip after the film coating is finished.
The method provided by the present embodiment will be described in detail in steps.
S1, placing a detector chip on a workpiece disc of a chamber, and vacuumizing the chamber.
In this embodiment, the detector chip generally refers to a mercury cadmium telluride detector chip, and specifically, the chip includes two portions, a readout circuit and an infrared chip, and the readout circuit and the infrared chip are connected by an interconnection structure therebetween. The side of the infrared chip far from the readout circuit is a mercury cadmium telluride substrate of the infrared chip, and usually, in the preparation process of the detector chip, the substrate is subjected to thinning treatment, and the specific thinning process can include, for example, corrosion thinning, physical thinning and the like. The thinned mercury cadmium telluride substrate surface is generally called the polished surface of the detector chip.
In this embodiment, a corresponding workpiece for performing a thin film preparation process on the detector chip may be disposed in the chamber. For example, the coated detector chip can be placed on a special fixture with the polishing surface facing down, and then the fixture is loaded on a workpiece rotating system of the chamber, the workpiece rotating system can drive the detector chip to rotate, and the process parameters during the rotation can be adjusted. Specifically, the process parameters may include: the vacuum degree of the chamber, the rotating speed of the workpiece disc, the heating temperature and the heating time of the workpiece disc, the coating rate and the coating thickness of the coating material, the sputtering power and the sputtering time of the coating material and the argon gas filling amount.
In this embodiment, the effect achieved by this embodiment is shown for the purpose of subsequent tests. A plurality of test accompany pieces can be arranged and are subjected to the same film coating treatment with the detector chip.
In this embodiment, the polished surfaces of the detector chip and the test matching sheet can be placed on the fixture downward, and then placed on the workpiece rotating system of the vacuum chamber of the high vacuum system coating equipment, the chamber gate is closed, and the vacuum pumping process flow is performed on the chamber by pressing the vacuum pumping button.
In this embodiment, the polished surfaces of the detector chip and the test matching sheet may be both placed upward on the fixture, and then placed on the workpiece rotating system of the vacuum chamber of the high vacuum system coating apparatus, the chamber gate is closed, and the vacuum pumping process flow is performed on the chamber by pressing the vacuum pumping button.
And S2, coating the detector chip by using a coating material and pre-configured process parameters, wherein the coating material comprises zinc selenide and ytterbium fluoride.
In this embodiment, the coating material includes zinc selenide and ytterbium fluoride, and specifically, a zinc selenide and ytterbium fluoride thin film material having a transparent band of 0.4 to 9 micrometers and a refractive index of 2.6 is used.
In this embodiment, when the polished surfaces of the detector chip and the test matching sheet are both placed downwards on the fixture and loaded onto the workpiece rotating system of the vacuum chamber of the high vacuum system coating apparatus, the process parameters to be configured correspondingly may include: workpiece rotating speed, workpiece disc heating temperature, heating time, and speed and thickness of the material to be plated.
And clicking a start button to carry out thermal evaporation on the chip to prepare the film after the heating temperature, the heating time and the vacuum degree of the cavity of the workpiece plate reach set values.
Or clicking a start button to perform electron beam evaporation on the chip to prepare the film after the heating temperature, the heating time and the vacuum degree of the chamber of the workpiece plate reach set values.
It is understood that the above-mentioned thin film preparation methods of "thermal evaporation" and "electron beam evaporation" have the same meaning as commonly understood by those skilled in the art.
It should be noted that the preset process parameters and the corresponding set values can be adjusted according to actual application requirements, and the process parameters and the set values disclosed in this embodiment do not indicate that the embodiment can be implemented only with the mentioned process parameters and a specific set value.
In this embodiment, when the detector chip and the polished surface of the test wafer are both placed into the fixture upward and loaded into the workpiece rotating system of the vacuum chamber of the high vacuum system coating apparatus, the process parameters to be configured correspondingly may include: the rotating speed of the workpiece, the heating temperature and the heating time of the workpiece disc, the sputtering power and the sputtering time of the target material and the gas filling amount of argon (Ar).
And clicking a start button to sputter the chip to prepare the film after the heating temperature, the heating time and the vacuum degree of the cavity of the workpiece plate reach set values.
It is to be understood that the above-mentioned thin film preparation method of "sputtering preparation" has the same meaning as commonly understood by those skilled in the art.
And S3, taking out the detector chip after the film coating is finished.
In this embodiment, the detector chip may be taken out from the chamber after the temperature of the chamber and the coated detector chip are cooled.
In this embodiment, after the detector chip and the test coupon that have been coated are taken out, the detector chip and the test coupon can be subjected to a performance test in order to confirm the validity of this embodiment.
For example, the test coupon can be subjected to corresponding optical tests, and the performance of the detector chip can be tested to confirm the wave band which can be covered after the detector chip is coated with the film.
Illustratively, the membrane system structure of the membrane structure of the detector chip prepared by the present embodiment may be 3.967H0.774L1.103H3.844L, and the total thickness is 3.967H0.774L1.103H3.4L
Compared with the prior art, the embodiment has at least the following advantages:
1) The wide-spectrum back reflection-reducing film of the mercury cadmium telluride infrared detector chip manufactured by adopting the zinc selenide and ytterbium fluoride composite film layer has smooth surface and no demoulding condition, and the performance of the detector is greatly improved.
2) The infrared chip for preparing the broad-spectrum back anti-reflection film has improved performance, the surface of the film is smooth, the adhesive force and the firmness of the film meet the environmental requirements of the use of devices, the qualification rate of the mass production of the devices is improved, and the cost is reduced.
A second embodiment of the present invention is prepared by the preparation method in the first embodiment, and this embodiment introduces a detector chip with a broad-spectrum back reflection reducing film, as shown in fig. 2, including the following components:
a readout circuit;
the infrared chip is connected with the reading circuit, wherein one side far away from the reading circuit is a polished surface comprising a mercury cadmium telluride material, and the thickness of the mercury cadmium telluride material is 8-10 micrometers;
a film adhered on the polished surface, wherein the film has a film structure of 3.967H0.774L1.103H3.844L and a total thickness of
A third embodiment of the present invention, an electronic device, as shown in fig. 3, can be understood as a physical device, including a detector chip with a broad-spectrum anti-reflection film as mentioned in the second embodiment, and the electronic device can include an infrared detector, for example.
A fourth embodiment of the present invention is an application example of the present invention, which is described on the basis of the above embodiments.
S1, putting the tellurium-cadmium-mercury plated chip and the test coupon into a special fixture with the polished surfaces facing downwards, putting the special fixture into a workpiece rotating system with a vacuum chamber of high-vacuum system coating equipment, closing a chamber door, and vacuumizing the chamber according to a vacuumizing button.
S2, setting the rotating speed of the workpiece, the heating temperature of the workpiece disc, the heating time, and the speed and the thickness of the material to be plated. And clicking a start button to carry out thermal evaporation on the chip to prepare the film when the vacuum degree, the temperature and the heating time reach set values.
And S3, after the plating is finished, taking out the accompanying sheet and the chip when the chamber is cooled to normal temperature.
And S4, carrying out optical test on the accompanying sheet, and carrying out performance test on the chip. The back anti-reflection film of the mercury cadmium telluride chip prepared by the thermal evaporation method has smooth surface, high uniformity and no demoulding.
The fifth embodiment of the present invention is an application example of the present invention, which is described on the basis of the above embodiments.
S1, putting the mercury cadmium telluride plated chip and the test accompanying sheet into a special fixture with the polished surfaces facing downwards, putting the fixture into a workpiece rotating system of a vacuum chamber of high-vacuum system coating equipment, closing a chamber door, and vacuumizing the chamber according to a vacuumizing key.
And S2, setting the rotating speed of the workpiece, the heating temperature of the workpiece disc, the heating time, and the speed and the thickness of the material to be plated. And clicking a start button to perform electron beam evaporation on the chip to prepare the film when the vacuum degree, the temperature and the heating time reach set values.
And S3, after the plating is finished, taking out the accompanying sheet and the chip when the chamber is cooled to normal temperature.
And S4, carrying out optical test on the accompanying sheet, and carrying out performance test on the chip. The back anti-reflection film of the mercury cadmium telluride chip prepared by the electron beam evaporation method has smooth surface, high uniformity and no demoulding.
A sixth embodiment of the present invention is an application example of the present invention, which is based on the above-described embodiments.
S1, putting the mercury cadmium telluride plated chip and the test coupon into a workpiece disc with a high vacuum system sputter coating machine with the polished surfaces facing upwards, closing a chamber gate, vacuumizing the chamber by pressing a vacuumizing button,
and S2, setting the rotating speed of the workpiece, the heating temperature of the workpiece disc, the heating time, the sputtering power and time of the target material and the aeration quantity of argon (Ar). And clicking a start button to carry out sputtering preparation on the chip after the vacuum degree, the temperature and the heating time reach set values.
And S3, taking out the accompanying sheet and the chip when the temperature of the preparation ending chamber is reduced to normal temperature.
And S4, carrying out optical test on the accompanying sheet, and carrying out performance test on the chip. The back anti-reflection film of the mercury cadmium telluride chip prepared by the sputtering evaporation method has smooth surface, high uniformity and no demoulding condition.
In summary, compared with the prior art, the present invention has at least the following advantages:
1) The broad-spectrum back reflection-reducing film of the mercury cadmium telluride infrared detector chip manufactured by adopting the zinc selenide and ytterbium fluoride composite film has smooth surface and no film stripping, and the performance of the detector is greatly improved.
2) The infrared chip for preparing the broad-spectrum back anti-reflection film has improved performance, the surface of the film is smooth, the adhesive force and the firmness of the film meet the environmental requirements of the use of devices, the qualification rate of the mass production of the devices is improved, and the cost is reduced.
While the invention has been described in connection with specific embodiments thereof, it is to be understood that it is intended by the appended drawings and description that the invention may be embodied in other specific forms without departing from the spirit or scope of the invention.
Claims (10)
1. A preparation method of a broad-spectrum back anti-reflection film for a detector chip is characterized by comprising the following steps:
placing the detector chip on a workpiece disc of a chamber, and vacuumizing the chamber;
coating the detector chip by using a coating material and pre-configured process parameters, wherein the coating material comprises zinc selenide and ytterbium fluoride;
and taking out the detector chip after film coating.
2. The method for preparing the broad-spectrum back anti-reflection film for the detector chip as claimed in claim 1, wherein the coating material comprises:
zinc selenide and ytterbium fluoride with a transparent waveband of 0.4-9 microns and a refractive index of 2.6.
3. The method for preparing a broad-spectrum anti-reflection film for a detector chip as claimed in claim 1, wherein the step of placing the detector chip on a workpiece tray of a chamber and performing vacuum-pumping treatment on the chamber comprises:
placing the polished surfaces of the detector chip and the test accompanying sheet downwards on a workpiece disc of the chamber, closing a gate of the chamber, and vacuumizing the chamber; or alternatively
And placing the polished surfaces of the detector chip and the test accompanying sheet upwards on a workpiece disc of the cavity, closing a gate of the cavity, and vacuumizing the cavity.
4. The method for preparing a broad spectrum anti-reflection film for a detector chip according to claim 3,
when the polished surfaces of the detector chip and the test accompanying sheet are placed on a workpiece disc of the chamber downwards, the process parameters comprise: the vacuum degree of the chamber, the rotating speed of the workpiece disc, the heating temperature and the heating time of the workpiece disc, and the coating rate and the coating thickness of the coating material;
when the polished surfaces of the detector chip and the test accompanying sheet are upwards placed on a workpiece disc of the chamber, the process parameters comprise: the vacuum degree of the chamber, the rotating speed of the workpiece disc, the heating temperature and the heating time of the workpiece disc, the sputtering power and the sputtering time of the coating material and the argon gas filling amount.
5. The method for preparing a broad spectrum anti-reflection film for a detector chip according to claim 4,
and when the polished surfaces of the detector chip and the test coupon are placed on a workpiece disc of the chamber downwards, and the vacuum degree of the chamber, the heating temperature of the workpiece disc and the heating time in the process parameters reach preset values, performing a thermal evaporation method or an electron beam evaporation method on the detector chip to prepare a film.
6. The method for preparing the broad spectrum back anti-reflection film for the detector chip according to claim 4, comprising the following steps:
and when the polished surfaces of the detector chip and the test companion chip are upwards placed on a workpiece disc of the cavity, and the vacuum degree of the cavity, the heating temperature of the workpiece disc and the heating time in the process parameters reach preset values, carrying out a sputtering evaporation method on the detector chip to prepare a film.
7. The method for preparing a broad spectrum back anti-reflection film for a detector chip as claimed in claim 1, further comprising:
and carrying out performance test on the detector chip.
8. A detector chip with a broad spectrum antireflective film, characterized in that it is prepared by any one of claims 1 to 7.
9. The detector chip with the broad spectrum antireflective film of claim 8, comprising:
a readout circuit;
the infrared chip is connected with the reading circuit, wherein one side, far away from the reading circuit, of the infrared chip is a polished surface made of mercury cadmium telluride, and the thickness of the mercury cadmium telluride is 8-10 micrometers;
a thin film attached on the polished surface, wherein the thin film has a film system structure of 3.967H0.774L1.103H3.844L and a total thickness of
10. An electronic device comprising a detector chip having a broad-spectrum antireflection film according to any one of claims 8 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211064590.5A CN115491638B (en) | 2022-08-31 | 2022-08-31 | Preparation method of wide-spectrum back antireflection film for detector chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211064590.5A CN115491638B (en) | 2022-08-31 | 2022-08-31 | Preparation method of wide-spectrum back antireflection film for detector chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115491638A true CN115491638A (en) | 2022-12-20 |
| CN115491638B CN115491638B (en) | 2024-03-19 |
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