CN201927607U - Photovoltaic mercury-cadmium-tellurium infrared focal plane integrated with antireflection coating - Google Patents
Photovoltaic mercury-cadmium-tellurium infrared focal plane integrated with antireflection coating Download PDFInfo
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Abstract
The patent discloses a photovoltaic mercury-cadmium-tellurium infrared focal plane integrated with an antireflection coating. The infrared focal plane consists of the antireflection coating, a mercury-cadmium-tellurium chip with an indium bump array, a substrate, a signal reading circuit with an indium bump array, a key pressing lead wire, polyurethane modified epoxy resin and a jeweled piece lead substrate. The antireflection coating of the infrared focal plane is an antireflection film with favorable antireflection characteristic, is prepared by adopting the magnetron sputtering method under the condition that the modular structure is maintained,, has optimized processing parameter, and grows in low temperature and within 3.5-5Mum. In the structure, the antireflection film can be well attached to the surface of the chip substrate of a mercury-cadmium-tellurium infrared detector, and can not drop off and maintains the performance in the high-low temperature variation process. By adopting the preparation method of the antireflection coating in the structure, the antireflection coating is particularly suitable for growing on the surface of the thinned and polished substrate of the mercury-cadmium-tellurium infrared focal plane detector (the thickness of the chip is smaller than 50Mum).
Description
Technical field
This patent relates to the photodetector technology, specifically refers to a kind of photovoltaic type HgCdTe infrared focal plane that is integrated with anti-reflection film.
Background technology
The infrared focal plane detector module is a kind of imaging sensor that obtains and carry out information processing of realizing infrared information simultaneously, at earth observation from space, missile homing and precise guidance, industry and medical thermography, dual-use fields such as forest fire detection supervision have important and use widely, and the large-scale infrared focal plane detector module of high-performance has been widely used in various great national security projects and the important new weapon system.As part important in the infrared imaging system of new generation, obtain high-performance, high temperature, high speed operation and the extensive HgCdTe infrared focal plane detector module of the high spatial resolution target that is Development of Infrared Technique more.
The pixel quantum efficiency of detector is one of important parameter that influences detector performance in the photovoltaic type HgCdTe infrared focal plane module, the pixel quantum efficiency is that each incides the signal charge charge carrier number that photon produced on the pixel plane of illumination, for photovoltaic type HgCdTe infrared focal plane module, its quantum efficiency is the product of the pn knot charge collection efficiency of the optical efficiency of device and device.The optical efficiency of device is closely-related with the reflectivity on device substrate surface, and reflectivity reduces, and then can improve the optical efficiency of device, further improves the responsiveness of device.
Existing both at home and abroad certain methods propose to be used to the to grow anti-reflection film of mercury cadmium telluride chip, but it all is not suitable for anti-reflection film preparation of detector in the said photovoltaic type HgCdTe infrared focal plane module here.Here said photovoltaic type HgCdTe infrared focal plane module is by medium wave photovoltaic type mercury cadmium telluride chip, signal read circuit and electrode are drawn the labyrinth that the substrate of jewel sheet is formed, the detector that has chip and signal read circuit is fixed on the jewel plate electrode substrate by a kind of polyurethane modified epoxy resin, because HgCdTe infrared focal plane module working temperature is 80k, in order to improve the reliability that detector is worked at low temperatures, substrate of detector is thinned and is polished to 40～50 microns.Its structural representation is respectively as Fig. 1 (a), (b) shown in.Key voltage lead wires on the detector between circuit and the jewel substrate need guarantee that it is intact, causes detector to lose efficacy to avoid lead-in wire to come off in growth and cleaning process.Contact conductor on the jewel substrate must be protected intact in the anti-reflection film growth course, is grown on the electrode to avoid anti-reflection film, causes insulation and causes that detector lost efficacy.The cadmium-telluride-mercury infrared detector chip can cause device performance degeneration when temperature is higher than 70 degrees centigrade, so the temperature of anti-reflection film growth must be grown being lower than under 70 degrees centigrade the environment.Simultaneously owing to the medium wave cadmium-telluride-mercury infrared detector stores at room temperature, be operated under the low temperature of 80k, therefore must there be the good adhesion and the coupling of thermal coefficient of expansion in the attenuated polishing surface of film and detector chip, to guarantee device in high low temperature temperature changing process, film adheres to intact on device.The service band of medium wave cadmium-telluride-mercury infrared detector is usually at 3.5～5 microns, must guarantee that therefore anti-reflection film has a good anti-reflection effect of penetrating in this specific band scope.
Summary of the invention
The purpose of this patent provides a kind of integrated photovoltaic type HgCdTe infrared focal plane of anti-reflection film, this device anti-reflection film of directly growing in the above behind probe substrate attenuated polishing to 40～50 micron has the good anti-reflection characteristic of penetrating at specific service band 3.5～5um.
Medium wave photovoltaic type HgCdTe infrared focal plane module comprises that medium wave mercury cadmium telluride chip is by the indium post array 4 on anti-reflection film 1, mercury cadmium telluride chip 2, substrate 3, the mercury cadmium telluride chip, the indium post array 5 of signal read circuit, key voltage lead wires 7, signal read circuit 8 in this patent; Polyurethane modified epoxy resin 9 and jewel sheet lead-in wire substrate 11 constitute, and it is characterized in that: described substrate 3 is substrates of polishing attenuate, and thickness is 40～50 microns; Described anti-reflection film 1 is the ZnS film that directly is coated on the substrate 3.
Medium wave photovoltaic type HgCdTe infrared focal plane module comprises medium wave mercury cadmium telluride chip in this patent, signal read circuit and electrode are drawn the substrate of jewel sheet, the detector that has chip and signal read circuit is fixed on the jewel plate electrode substrate by a kind of polyurethane modified epoxy resin, probe substrate attenuated polishing to 40～50 micron.Its concrete structure as shown in Figure 1.Epitaxially grown mercury cadmium telluride thin film adopts semiconductor technology to obtain to have the mercury cadmium telluride chip 2 of indium post array 4 on substrate 3, substrate 3 superficial growths behind the attenuated polishing have anti-reflection film 1, mercury-cadmium tellurid detector links together by the interconnected technology of inverse bonding with the signal read circuit 8 that has indium post array 5, reading circuit 8 is fixed on the jewel sheet lead-in wire substrate by polyurethane modified epoxy resin 9, finishes signal by key voltage lead wires 7 and draws.
Anti-reflection film in this patent is the ZnS thin-film material for preparing on the substrate of medium wave mercury-cadmium tellurid detector by the magnetron sputtering preparation method, this thin-film material can reduce reflectivity by optical coupled, improve the transmitance of the infrared signal that incides mercury cadmium telluride chip substrate surface, thereby improve the quantum efficiency of detector.Anti-reflection film preparation method concrete steps described in this patent are as follows:
A. the cleaning of focal plane module
The HgCdTe infrared focal plane module is put into trichloroethylene soaked 24 hours, use trichloroethylene, ether, acetone, alcohol-pickled cleaning then respectively.
B. the protection of focal plane module
Circuit presser feet in the HgCdTe infrared focal plane module; electrode pin on key voltage lead wires and the jewel sheet covers one deck photoresist; electrode pin on protective circuit presser feet and the jewel sheet; the baking oven of putting into 65 degrees centigrade is dried, and exposes the substrate surface behind the detector process attenuated polishing in the HgCdTe infrared focal plane module.
C. anti-reflection film growth
1. will protect intact HgCdTe infrared focal plane module to put into the sputter cavity of magnetron sputtering film device, the substrate surface growing ZnS at low temperature film behind HgCdTe infrared focal plane module attenuated polishing;
2. setting argon flow amount is 50SCCM, and chamber pressure is 1x10
-4Pascal;
When 3. sputtering power was 30W, thin film sputtering speed was 0.55 nm/minute, and sputtering power is 50W, and thin film sputtering speed is 2.3 nm/minute, and every growth 1 hour stopped growing 30 minutes, guaranteed that the sample grown temperature is 40～50 degrees centigrade.Adopt sputtering power 30W growth 1 hour earlier, adjusting sputtering power then is 50W growth 3.5 hours, and obtaining film thickness is 0.5 micron.
D. the focal plane module is peeled off
With the HgCdTe infrared focal plane module of the anti-reflection film of having grown, put into acetone and soaked 30 minutes, the photoresist and the ZnS film on stripper circuit surface and jewel sheet surface; With acetone, alcohol the focal plane module is cleaned up again.
This patent has following advantage:
1. this patent is specially adapted to include the mercury cadmium telluride chip, the HgCdTe infrared focal plane module of reading circuit and jewel substrate, the anti-reflection film of after the HgCdTe infrared focal plane detector is through degree of depth attenuated polishing, growing on the substrate surface of (chip thickness is less than 50um).
2. this patent adopts semiconductor technology photoresist commonly used as protective layer, can be easily and effectively to the reading circuit presser feet, positions such as key voltage lead wires and jewel plate electrode substrate are protected, and have avoided these positions ZnS depositing of thin film.
3. this patent adopts the method growing ZnS anti-reflection film of magnetron sputtering, make film and cadmium-telluride-mercury infrared detector chip substrate surface that good tack be arranged, by technological parameter is optimized, effectively discharge thermal stress in growth course, the assurance film does not come off in the high and low temperature change procedure and does not change performance.
4. the ZnS film selected for use of this patent and the backing material of mercury-cadmium-tellurium detector chips have better matching property on light refractive index, can obtain the anti-reflection effect of penetrating at this medium wave specific band by process parameter optimizing.
Description of drawings
Fig. 1 (a) is the top plan view structural representation of the photovoltaic type HgCdTe infrared focal plane module of this patent, and Fig. 1 (b) is the A-B cross-sectional view of Fig. 1 (a), wherein: the 1st, anti-reflection film; The 2nd, the mercury cadmium telluride chip; The 3rd, substrate; The 4th, the indium post array on the mercury cadmium telluride chip; The 5th, the indium post array of signal read circuit; The 6th, the presser feet of signal read circuit; The 7th, the key voltage lead wires; The 8th, signal read circuit; The 9th, polyurethane modified epoxy resin; The 10th, the electrode pin on the jewel sheet lead-in wire substrate; The 11st, jewel sheet lead-in wire substrate.
Fig. 2 is the reflectance curve figure on probe substrate surface, and curve 21 is the do not grow reflectance curve of anti-reflection film of substrate surface, and curve 22 is grow reflectance curve behind the anti-reflection film of substrate surface.
Fig. 3 is the transmittance graph figure that GaAs accompanies sheet, and curve 31 is the transmittance graph of the anti-reflection film of not growing, and curve 32 is the transmittance graph behind the growth anti-reflection film.
Embodiment
Below in conjunction with accompanying drawing, be that to be example elaborate to the execution mode of this patent for the HgCdTe infrared focal plane module of 320x240 with photosensitive element array:
Said photovoltaic type HgCdTe infrared focal plane module in this patent, comprise the photovoltaic type mercury cadmium telluride 320x240 detector chip 2 that has indium post array 4, detector chip adopts the inverse bonding interconnection technique to be interconnected with the 320x240 reading circuit 8 that has indium post array 5, focus planardetector is attached on the jewel plate electrode substrate 11 by a kind of polyurethane modified epoxy resin 9, behind epoxy resin cure, obtain the HgCdTe infrared focal plane module.The focal plane module is by dark attenuated polishing technology, and the substrate 3 of detector chip is thinned to 40～50 microns, improves the high low temperature circulation reliability of device.Focus planardetector is finished signal by key voltage lead wires 7 and is drawn, and makes the focal plane module can carry out signal easily by the electrode pin on the jewel sheet 11 10 and reads.At circuit presser feet 6, the electrode pin 10 on key voltage lead wires 7 and the jewel sheet 11 covers one deck photoresist, and the electrode pin on protective circuit presser feet and the jewel sheet exposes the probe substrate 3 superficial growth anti-reflection films 1 through attenuated polishing.
Magnetron sputtering in this patent prepares the anti-reflection film of penetrating that anti-reflection film can guarantee that the probe substrate surface low-temperature growth behind dark attenuated polishing has well attached performance; pass through parameters Optimization; make the anti-reflection wave band of penetrating the reduction reflection of film satisfy the needs of medium wave photovoltaic type cadmium-telluride-mercury infrared detector; simultaneously can effectively protect 320x240 circuit presser feet; key voltage lead wires and jewel electrode base board are avoided at these regional apposition growth insulation films.320x240 cadmium-telluride-mercury infrared detector chip in this example is the detector chip of GaAs substrate, the GaAs refractive index of substrate is 3.3, adopt the ZnS film of the magnetically controlled sputter method growth in this patent to test through over-fitting, its refractive index is 2.1, according to its growth thickness of Theoretical Calculation is 0.5 micron, can guarantee that detector has the good anti-reflection effect of penetrating in 3.5～5 micrometer ranges.The magnetron sputtering technique condition: the setting argon flow amount is 50SCCM, and chamber pressure is 1x10
-4Pascal, when sputtering power was 30W, thin film sputtering speed was 0.55 nm/minute, when sputtering power is 50W, thin film sputtering speed is 2.3 nm/minute, in order effectively to discharge thermal stress in growth course, and temperature is 40～50 degrees centigrade when guaranteeing sample grown, every growth 1 hour, stopped growing 30 minutes, growth time sputtering power 30W is 1 hour, and sputtering power 50W is 3.5 hours, and adopting this technology can obtain film thickness is 0.5 micron ZnS film.Fig. 2 is that this example is implemented the probe substrate surface reflection rate curve measure, and curve 21 is the do not grow reflectance curve of anti-reflection film of substrate surface, and curve 22 is grow reflectance curve behind the anti-reflection film of substrate surface.Fig. 3 is the transmittance graph figure that GaAs accompanies sheet, because the focal plane module can't directly be measured transmissivity, therefore adopts backing material GaAs to accompany sheet with same process conditions growth anti-reflection film, measures the transmittance graph of accompanying sheet.Curve 31 is the transmittance graph of the anti-reflection film of not growing, and curve 32 is the transmittance graph behind the growth anti-reflection film.As can be seen from the figure, after the anti-reflection film of having grown, the reflectivity on probe substrate surface drops to 6.5% from 30% in 3.5～5 micrometer ranges, and transmissivity brings up to 65% from 53%.By measuring the responsiveness of 320x240 focal plane module, its responsiveness improves 15～20% behind the growth anti-reflection film.The result of this patent has been applied to 320x240 at present, and 128x128 is in the anti-reflection film preparation of HgCdTe infrared focal plane modules such as 640x512.
Claims (1)
1. medium wave photovoltaic type HgCdTe infrared focal plane that is integrated with anti-reflection film, it is by indium post array (5), key voltage lead wires (7), the signal read circuit (8) of the indium post array (4) on anti-reflection film (1), mercury cadmium telluride chip (2), substrate (3), the mercury cadmium telluride chip, signal read circuit; Polyurethane modified epoxy resin (9) and jewel sheet lead-in wire substrate (11) constitute, and it is characterized in that: described substrate (3) is the substrate of polishing attenuate, and thickness is 40～50 microns; Described anti-reflection film (1) is the ZnS film that directly is coated on the substrate (3).
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| CN2010202248916U CN201927607U (en) | 2010-06-11 | 2010-06-11 | Photovoltaic mercury-cadmium-tellurium infrared focal plane integrated with antireflection coating |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2515960C1 (en) * | 2012-11-07 | 2014-05-20 | Открытое акционерное общество "НПО "Орион" (ОАО "НПО "Орион") | METHOD FOR MANUFACTURE OF PbS-BASED PHOTORECEIVING MODULE |
| CN106505127A (en) * | 2016-10-26 | 2017-03-15 | 中国科学院半导体研究所 | The method for solving stress between quantum trap infrared detector array and reading circuit |
| CN106549067A (en) * | 2016-11-09 | 2017-03-29 | 北京空间机电研究所 | A kind of large-scale Infrared Focal Plane Structure with thermal stress relieving capacity |
| CN110310966A (en) * | 2019-06-20 | 2019-10-08 | 中国电子科技集团公司第十一研究所 | A kind of mercury cadmium telluride chip and its processing method |
| CN110634991A (en) * | 2019-09-02 | 2019-12-31 | 中国电子科技集团公司第十一研究所 | Preparation method of silicon-based tellurium-cadmium-mercury chip and tellurium-cadmium-mercury infrared detector |
| CN113465736A (en) * | 2021-06-30 | 2021-10-01 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
| CN115047571A (en) * | 2022-06-27 | 2022-09-13 | 中国科学院半导体研究所 | Film coating structure of optical detector chip |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2515960C1 (en) * | 2012-11-07 | 2014-05-20 | Открытое акционерное общество "НПО "Орион" (ОАО "НПО "Орион") | METHOD FOR MANUFACTURE OF PbS-BASED PHOTORECEIVING MODULE |
| CN106505127A (en) * | 2016-10-26 | 2017-03-15 | 中国科学院半导体研究所 | The method for solving stress between quantum trap infrared detector array and reading circuit |
| CN106549067A (en) * | 2016-11-09 | 2017-03-29 | 北京空间机电研究所 | A kind of large-scale Infrared Focal Plane Structure with thermal stress relieving capacity |
| CN110310966A (en) * | 2019-06-20 | 2019-10-08 | 中国电子科技集团公司第十一研究所 | A kind of mercury cadmium telluride chip and its processing method |
| CN110634991A (en) * | 2019-09-02 | 2019-12-31 | 中国电子科技集团公司第十一研究所 | Preparation method of silicon-based tellurium-cadmium-mercury chip and tellurium-cadmium-mercury infrared detector |
| CN110634991B (en) * | 2019-09-02 | 2021-07-02 | 中国电子科技集团公司第十一研究所 | Preparation method of silicon-based tellurium-cadmium-mercury chip and tellurium-cadmium-mercury infrared detector |
| CN113465736A (en) * | 2021-06-30 | 2021-10-01 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
| CN113465736B (en) * | 2021-06-30 | 2023-08-11 | 中国电子科技集团公司信息科学研究院 | On-chip integrated infrared detector |
| CN115047571A (en) * | 2022-06-27 | 2022-09-13 | 中国科学院半导体研究所 | Film coating structure of optical detector chip |
| CN115047571B (en) * | 2022-06-27 | 2023-12-05 | 中国科学院半导体研究所 | Coating structure of photodetector chip |
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