CN115491638B - Preparation method of wide-spectrum back antireflection film for detector chip - Google Patents
Preparation method of wide-spectrum back antireflection film for detector chip Download PDFInfo
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- CN115491638B CN115491638B CN202211064590.5A CN202211064590A CN115491638B CN 115491638 B CN115491638 B CN 115491638B CN 202211064590 A CN202211064590 A CN 202211064590A CN 115491638 B CN115491638 B CN 115491638B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000001228 spectrum Methods 0.000 title abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 37
- 238000000576 coating method Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 28
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims abstract description 12
- XASAPYQVQBKMIN-UHFFFAOYSA-K ytterbium(iii) fluoride Chemical compound F[Yb](F)F XASAPYQVQBKMIN-UHFFFAOYSA-K 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 43
- 238000010438 heat treatment Methods 0.000 claims description 37
- 238000012360 testing method Methods 0.000 claims description 31
- 238000004544 sputter deposition Methods 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 10
- 230000003667 anti-reflective effect Effects 0.000 claims description 8
- 239000000523 sample Substances 0.000 claims description 8
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000011056 performance test Methods 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 abstract description 4
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 238000012797 qualification Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 55
- 238000003825 pressing Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 specifically Chemical compound 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a preparation method of a wide-spectrum back antireflection film for a detector chip, which comprises the following steps: placing the detector chip on a workpiece disc of the cavity, and vacuumizing the cavity; coating the detector chip by using a coating material and pre-configured technological parameters, wherein the coating material comprises zinc selenide and ytterbium fluoride; and after the cavity is cooled, taking out the coated detector chip. The invention has at least the following advantages: the tellurium-cadmium-mercury infrared detector chip manufactured by adopting the zinc selenide and ytterbium fluoride composite film layer has smooth surface, no film stripping condition and greatly improved performance; and the performance of the infrared chip for preparing the wide-spectrum back anti-reflection film is improved, the surface of the film is smooth, the adhesive force and the firmness of the film meet the environmental requirements of device use, the qualification rate of mass production devices is improved, and the cost is reduced.
Description
Technical Field
The invention relates to the technical field of infrared focal plane detector manufacturing, in particular to a preparation method of a wide-spectrum back antireflection film for a detector chip.
Background
With the rapid development of infrared technology, the requirements of various application fields such as remote sensing detection, space astronomy, industry and agriculture on the working spectrum area of an infrared detector are wider and wider, and a single detector is required to cover a single wave band range such as short wave band, medium wave band and long wave band, and can achieve the effect of covering multispectral wave bands such as visible wave band, near infrared wave band, short wave band, medium wave band and long wave band. Therefore, the development and preparation of the wide-spectrum band antireflection coating with high transmittance and high reliability are important development directions in the future infrared detector research field.
At present, the research on infrared wide-spectrum antireflection film layers at home and abroad is quite rare, but mainly focused on the aspects of visible light, near infrared, short-medium wave infrared, medium-long wave infrared and other dual-spectrum fields, and the back antireflection film layer with wider spectrum coverage range is very rare.
Disclosure of Invention
The invention aims to solve the technical problem that the existing film structure can cover a smaller wave band range, and in view of the problem, the invention provides a preparation method of a wide-spectrum back antireflection film for a detector chip.
The technical scheme adopted by the invention is that the preparation method of the wide-spectrum back antireflection film for the detector chip comprises the following steps: placing the detector chip on a workpiece disc of a chamber, and vacuumizing the chamber; coating the tellurium-cadmium-mercury detector chip by using a coating material and pre-configured technological parameters, wherein the coating material comprises zinc selenide and ytterbium fluoride; and taking out the tellurium-cadmium-mercury detector chip with the coating film completed.
In one embodiment, the coating material comprises: the transparent wave band is between 0.4 and 9 microns, and the refractive index is zinc selenide and ytterbium fluoride with the refractive index of 2.6.
In one embodiment, the placing the detector chip on a workpiece tray of a chamber and performing vacuum pumping treatment on the chamber includes: placing the polished surfaces of the detector chip and the test accompanying sheet downwards on a workpiece disc of the chamber, closing a gate of the chamber, and vacuumizing the chamber; or placing the polished surfaces of the detector chip and the test accompanying sheet upwards on a workpiece disc of the chamber, closing a gate of the chamber, and vacuumizing the chamber.
In one embodiment, when the detector chip and the polishing surface of the test coset are placed on the workpiece tray of the chamber face down, the process parameters include: the vacuum degree of the cavity, the rotating speed of the workpiece disc, the heating temperature and the heating time of the workpiece disc and the coating speed and thickness of the coating material; when the probe chip and the polishing surface of the test coset are placed on the workpiece tray of the chamber, the process parameters include: the vacuum degree of the chamber, the rotating speed of the workpiece disc, the heating temperature and the heating time of the workpiece disc, and the sputtering power, the sputtering time and the argon gas charging amount of the coating material.
In one embodiment, when the polished surface of the probe chip and the test coside is placed on the workpiece tray of the chamber downward, and the vacuum degree of the chamber, the heating temperature of the workpiece tray and the heating time of the process parameters reach preset set values, performing a thermal evaporation method or an electron beam evaporation method on the probe chip to prepare a film.
In one embodiment, when the polished surfaces of the detector chip and the test coside are placed on the workpiece tray of the chamber upwards, and the vacuum degree of the chamber, the heating temperature of the workpiece tray and the heating time of the process parameters reach preset set values, the thin film is prepared by a sputtering evaporation method on the detector chip.
In one embodiment, the method further comprises: and performing performance test on the detector chip.
In yet another aspect, the invention provides a detector chip with a broad spectrum back antireflective film, the detector chip being prepared via any one of the above.
In one embodiment, the detector chip with a broad spectrum back antireflective film comprises: a readout circuit; the infrared chip is connected with the reading circuit, wherein one side far away from the reading circuit is a polished surface made of tellurium-cadmium-mercury material, and the thickness of the tellurium-cadmium-mercury material is 8-10 microns; a film attached to the polishing surface, wherein the film has a film system structure of 3.967H0.774L1.103H3.844L the total thickness is
Another aspect of the invention provides an electronic device comprising a detector chip with a broad spectrum back antireflective film as defined in any one of the preceding claims.
By adopting the technical scheme, the invention has at least the following advantages:
1) The tellurium-cadmium-mercury infrared detector chip manufactured by adopting the zinc selenide and ytterbium fluoride composite film layer has the advantages that the surface of the broad spectrum back anti-reflection film is smooth, the film stripping condition is avoided, and the performance of the detector is greatly improved.
2) The infrared chip of the wide spectrum back anti-reflection film is improved in performance, the surface of the film is smooth, the adhesive force and the firmness of the film meet the environmental requirements of device use, the qualification rate of mass production devices is improved, and the cost is reduced.
Drawings
FIG. 1 is a flow chart of a method for preparing a broad spectrum back antireflection film for a detector chip according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the composition of a detector chip with a broad spectrum back antireflection film according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
In order to further describe the technical means and effects adopted by the present invention for achieving the intended purpose, the following detailed description of the present invention is given with reference to the accompanying drawings and preferred embodiments.
The steps of the method flow described in the specification and the flow chart shown in the drawings of the specification are not necessarily strictly executed according to step numbers, and the execution order of the steps of the method may be changed. Moreover, some steps may be omitted, multiple steps may be combined into one step to be performed, and/or one step may be decomposed into multiple steps to be performed.
In a first embodiment of the present invention, a method for preparing a broad spectrum back antireflection film for a detector chip, as shown in fig. 1, includes the following specific steps:
step S1, placing a detector chip on a workpiece disc of a chamber, and vacuumizing the chamber;
s2, coating a detector chip by using a coating material and pre-configured process parameters, wherein the coating material comprises zinc selenide and ytterbium fluoride;
and S3, taking out the coated detector chip.
The method provided in this embodiment will be described in detail in the following steps.
And S1, placing the detector chip on a workpiece disc of the chamber, and vacuumizing the chamber.
In this embodiment, the detector chip generally refers to a mercury cadmium telluride detector chip, specifically, the chip includes a readout circuit and an infrared chip, and the readout circuit and the infrared chip are connected by an interconnection structure therebetween. In general, in the process of manufacturing the detector chip, the substrate is subjected to thinning treatment, and specific thinning technology may include, for example, corrosion thinning, physical thinning, and the like. The thinned mercury cadmium telluride substrate surface is commonly referred to as the polished face of the detector chip.
In this embodiment, a corresponding workpiece for performing a thin film manufacturing process on the detector chip may be disposed in the chamber. For example, the coated detector chip may be placed on a special fixture with the polished surface facing down, and the fixture is then loaded into a workpiece rotation system of the chamber that rotates the detector chip, and the process parameters during rotation may be adjusted. Specifically, the process parameters may include: vacuum degree of the chamber, rotating speed of the workpiece disc, heating temperature of the workpiece disc, heating time, coating speed and thickness of the coating material, sputtering power of the coating material, sputtering time and argon gas charging amount.
In this embodiment, for the purpose of subsequent testing, the effects achieved in this embodiment are shown. A plurality of test accompanying sheets can be arranged, and the same coating treatment is carried out with the detector chip.
In this embodiment, the polished surfaces of the probe chip and the test patch may be placed down on a fixture, and placed on a workpiece rotation system having a vacuum chamber of a high vacuum system coating apparatus, the chamber door is closed, and a process of evacuating the chamber is performed by pressing an evacuating key.
In this embodiment, the polished surfaces of the probe chip and the test patch may be placed on the fixture, and then placed on a workpiece rotating system with a vacuum chamber of a high vacuum system coating apparatus, the chamber door is closed, and the vacuum process is performed on the chamber by pressing a vacuum-pumping button.
And S2, coating the detector chip by using coating materials and preconfigured technological parameters, wherein the coating materials comprise zinc selenide and ytterbium fluoride.
In this embodiment, the coating material includes zinc selenide and ytterbium fluoride, specifically, zinc selenide and ytterbium fluoride thin film materials with a transparent wave band of 0.4 to 9 micrometers and a refractive index of 2.6 are used.
In this embodiment, when the probe chip and the polishing surface of the test patch are both placed downward on the fixture and are placed on the workpiece rotating system of the vacuum chamber with the high vacuum system coating apparatus, the process parameters to be correspondingly configured may include: workpiece rotation speed, workpiece disc heating temperature, heating time, and material speed and thickness to be plated.
And clicking a start button to perform a thermal evaporation method on the chip to prepare a film after the heating temperature and the heating time of the workpiece disc and the vacuum degree of the cavity reach set values.
Or clicking a start button to perform an electron beam evaporation method on the chip to prepare a film after the heating temperature and the heating time of the workpiece disc and the vacuum degree of the cavity reach set values.
It will be appreciated that the above-described methods of film preparation for "thermal evaporation" and "electron beam evaporation" have the same meaning as understood in the general case of those skilled in the art.
It should be noted that, the pre-configured process parameters and the corresponding set values may be adjusted according to the actual application requirements, and the process parameters and the set values disclosed in this embodiment are not limited to the specific process parameters and the specific set values.
In this embodiment, when the probe chip and the polishing surface of the test patch are both placed on the fixture with the polishing surface facing upward and are placed on the workpiece rotating system with the vacuum chamber of the high vacuum system coating apparatus, the process parameters to be correspondingly configured may include: workpiece rotation speed, workpiece disc heating temperature, heating time, target sputtering power, time and argon (Ar) charging amount.
And clicking a start button to sputter the chip to prepare a film after the heating temperature and the heating time of the workpiece disc and the vacuum degree of the cavity reach set values.
It will be appreciated that the above-described thin film preparation method of "sputter preparation" has the same meaning as is commonly understood by those skilled in the art.
And S3, taking out the coated detector chip.
In this embodiment, the temperature of the chamber and the coated detector chip may be cooled, and then the detector chip may be removed from the chamber.
In this embodiment, after the coated detector chip and the test cosheet are taken out, in order to confirm the validity of this embodiment, a performance test may be performed on the detector chip and the test cosheet.
For example, the test coside may be subjected to a corresponding optical test, and the performance of the detector chip may be tested to confirm the wavelength band that can be covered by the coated detector chip.
Exemplary, the film structure of the detector chip prepared by the present embodiment may have a film system structure of 3.967H0.774L1.103H3.844L and a total thickness of
Compared with the prior art, the embodiment has at least the following advantages:
1) The tellurium-cadmium-mercury infrared detector chip manufactured by adopting the zinc selenide and ytterbium fluoride composite film layer has the advantages that the surface of the broad spectrum back anti-reflection film is smooth, the film stripping condition is avoided, and the performance of the detector is greatly improved.
2) The infrared chip of the wide spectrum back anti-reflection film is improved in performance, the surface of the film is smooth, the adhesive force and the firmness of the film meet the environmental requirements of device use, the qualification rate of mass production devices is improved, and the cost is reduced.
The second embodiment of the present invention is prepared by the preparation method in the first embodiment, and this embodiment introduces a detector chip with a broad spectrum back antireflection film, as shown in fig. 2, and includes the following components:
a readout circuit;
the infrared chip is connected with the reading circuit, wherein one side far away from the reading circuit is a polished surface made of tellurium-cadmium-mercury material, and the thickness of the tellurium-cadmium-mercury material is 8-10 microns;
a film attached to the polishing surface, wherein the film system structure of the film is 3.967H0.774L1.103H3.844L, and the total thickness is
A third embodiment of the invention, an electronic device, as shown in fig. 3, may be understood as a physical device comprising a detector chip with a broad spectrum back-reflection film as mentioned in the second embodiment, the electronic device may for example comprise an infrared detector.
A fourth embodiment of the present invention is to introduce an application example of the present invention on the basis of the above-described embodiment.
S1, placing the polished surfaces of the tellurium-cadmium-mercury plated chip and the test accompanying piece on a special fixture downwards, placing the special fixture on a workpiece rotating system of a vacuum chamber with high vacuum system coating equipment, closing a chamber gate, and pressing a vacuumizing button to vacuumize the chamber.
S2, setting the workpiece rotating speed, the workpiece disc heating temperature, the heating time and the speed and the thickness of the material to be plated. And clicking a start button to perform a thermal evaporation method on the chip to prepare the film after the vacuum degree, the temperature and the heating time reach set values.
S3, taking out the accompanying sheet and the chip when the temperature of the chamber is reduced to normal temperature after plating.
S4, optical testing is conducted on the accompanying sheet, and performance testing is conducted on the chip. The tellurium-cadmium-mercury chip back antireflection film prepared by the thermal evaporation method has a smooth surface, high uniformity and no occurrence of film stripping.
A fifth embodiment of the present invention is to introduce an application example of the present invention on the basis of the above-described embodiment.
S1, placing the polished surfaces of the tellurium-cadmium-mercury plated chip and the test accompanying piece on a special fixture downwards, placing the special fixture on a workpiece rotating system of a vacuum chamber with high vacuum system coating equipment, closing a chamber gate, and pressing a vacuumizing button to vacuumize the chamber.
S2, setting the workpiece rotating speed, the workpiece disc heating temperature, the heating time and the speed and the thickness of the material to be plated. And after the vacuum degree, the temperature and the heating time reach set values, clicking a start button to perform an electron beam evaporation method on the chip to prepare the film.
S3, taking out the accompanying sheet and the chip when the temperature of the chamber is reduced to normal temperature after plating.
S4, optical testing is conducted on the accompanying sheet, and performance testing is conducted on the chip. The tellurium-cadmium-mercury chip back antireflection film prepared by the electron beam evaporation method has the advantages of smooth surface, high uniformity and no occurrence of film stripping.
A sixth embodiment of the present invention is to introduce an application example of the present invention on the basis of the above-described embodiment.
S1, placing the polished surfaces of the tellurium-cadmium-mercury plated chip and the test accompanying chip upwards on a workpiece disc with a high vacuum system sputtering coating machine, closing a chamber gate, carrying out a vacuumizing process flow on the chamber by pressing a vacuumizing button,
s2, setting the workpiece rotating speed, the workpiece disc heating temperature, the heating time, the target sputtering power, the target sputtering time and the argon (Ar) charging amount. And clicking a start button to perform sputtering preparation on the chip after the vacuum degree, the temperature and the heating time reach set values.
S3, taking out the accompanying sheet and the chip when the temperature of the prepared cavity is reduced to normal temperature.
S4, optical testing is conducted on the accompanying sheet, and performance testing is conducted on the chip. The tellurium-cadmium-mercury chip back antireflection film prepared by the sputtering evaporation method has smooth surface, high uniformity and no occurrence of film stripping.
In summary, compared with the prior art, the invention has at least the following advantages:
1) The tellurium-cadmium-mercury infrared detector chip manufactured by adopting the zinc selenide and ytterbium fluoride composite film layer has the advantages that the surface of the broad spectrum back anti-reflection film is smooth, the film stripping condition is avoided, and the performance of the detector is greatly improved.
2) The infrared chip of the wide spectrum back anti-reflection film is improved in performance, the surface of the film is smooth, the adhesive force and the firmness of the film meet the environmental requirements of device use, the qualification rate of mass production devices is improved, and the cost is reduced.
While the invention has been described in connection with specific embodiments thereof, it is to be understood that these drawings are included in the spirit and scope of the invention, it is not to be limited thereto.
Claims (9)
1. A method for preparing a broad spectrum back antireflection film for a detector chip, comprising:
placing the detector chip on a workpiece disc of a chamber, and vacuumizing the chamber;
coating the detector chip by using a coating material and pre-configured technological parameters, wherein the coating material comprises zinc selenide and ytterbium fluoride with a transparent wave band of 0.4-9 microns and a refractive index of 2.6;
and taking out the detector chip with the coating film completed.
2. The method for preparing the broad spectrum back antireflection film for the detector chip according to claim 1, wherein the placing the detector chip on a workpiece tray of a chamber and performing vacuum pumping treatment on the chamber comprises:
placing the polished surfaces of the detector chip and the test accompanying sheet downwards on a workpiece disc of the chamber, closing a gate of the chamber, and vacuumizing the chamber; or alternatively
And placing the polished surfaces of the detector chip and the test accompanying sheet upwards on a workpiece disc of the chamber, closing a gate of the chamber, and vacuumizing the chamber.
3. The method for preparing the broad spectrum back antireflection film for the detector chip as claimed in claim 2, wherein,
when the detector chip and the polishing surface of the test coset are placed on the workpiece tray of the chamber downwards, the process parameters include: the vacuum degree of the cavity, the rotating speed of the workpiece disc, the heating temperature and the heating time of the workpiece disc and the coating speed and thickness of the coating material;
when the probe chip and the polishing surface of the test coset are placed on the workpiece tray of the chamber, the process parameters include: the vacuum degree of the chamber, the rotating speed of the workpiece disc, the heating temperature and the heating time of the workpiece disc, and the sputtering power, the sputtering time and the argon gas charging amount of the coating material.
4. The method for preparing the broad spectrum back antireflection film for the detector chip as claimed in claim 3, wherein,
and when the polished surfaces of the detector chip and the test accompanying sheet are downwards placed on the workpiece disc of the chamber and the vacuum degree of the chamber, the heating temperature of the workpiece disc and the heating time in the process parameters reach preset set values, performing a thermal evaporation method or an electron beam evaporation method on the detector chip to prepare a film.
5. A method of preparing a broad spectrum back antireflective film for a detector chip according to claim 3, comprising:
and when the polished surfaces of the detector chip and the test accompanying sheet are upwards placed on the workpiece disc of the chamber, and the vacuum degree of the chamber, the heating temperature of the workpiece disc and the heating time in the process parameters reach preset set values, preparing a film by using the sputtering evaporation method for the detector chip.
6. The method of preparing a broad spectrum back antireflective film for a detector chip of claim 1, further comprising:
and performing performance test on the detector chip.
7. A detector chip with a broad spectrum back antireflective film, characterized in that the detector chip is prepared via the preparation method of any one of claims 1 to 6.
8. The detector chip with broad spectrum back antireflective film of claim 7, comprising:
a readout circuit;
the infrared chip is connected with the reading circuit, wherein one side far away from the reading circuit is a polished surface made of tellurium-cadmium-mercury material, and the thickness of the tellurium-cadmium-mercury material is 8-10 microns;
and a film attached to the polishing surface, wherein the film has a film structure of 3.967H0.774L1.103H3.844L and a total thickness of 5040A.
9. An electronic device comprising a detector chip with a broad spectrum back antireflective film as claimed in any one of claims 7 to 8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211064590.5A CN115491638B (en) | 2022-08-31 | 2022-08-31 | Preparation method of wide-spectrum back antireflection film for detector chip |
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| CN202211064590.5A CN115491638B (en) | 2022-08-31 | 2022-08-31 | Preparation method of wide-spectrum back antireflection film for detector chip |
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| CN115491638A CN115491638A (en) | 2022-12-20 |
| CN115491638B true CN115491638B (en) | 2024-03-19 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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