CN115485833A - 测试结构以及测试方法 - Google Patents

测试结构以及测试方法 Download PDF

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Publication number
CN115485833A
CN115485833A CN202080099894.8A CN202080099894A CN115485833A CN 115485833 A CN115485833 A CN 115485833A CN 202080099894 A CN202080099894 A CN 202080099894A CN 115485833 A CN115485833 A CN 115485833A
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CN
China
Prior art keywords
resistor
test structure
resistors
resistance
test
Prior art date
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Pending
Application number
CN202080099894.8A
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English (en)
Inventor
廖昱程
邱青松
张明丰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Times Full Core Storage Technology Co ltd
Original Assignee
Cecil Business Mission Technology Holdings Ltd
Beijing Times Full Core Storage Technology Co ltd
Jiangsu Advanced Memory Semiconductor Co Ltd
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Publication date
Application filed by Cecil Business Mission Technology Holdings Ltd, Beijing Times Full Core Storage Technology Co ltd, Jiangsu Advanced Memory Semiconductor Co Ltd filed Critical Cecil Business Mission Technology Holdings Ltd
Publication of CN115485833A publication Critical patent/CN115485833A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/08—Measuring resistance by measuring both voltage and current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

一种测试结构以及测试方法。测试结构，包括：一第一电阻(21)；以及与第一电阻(21)电学串联的至少一第二电阻(22)，第二电阻(22)的数目为M×N个，M和N为正整数，所有的第二电阻(22)彼此电学并联。通过设置不同数目的电阻来获得电阻差值，从而精确计算出相变材料和加热器的电阻值。

Description

PCT国内申请，说明书已公开。

Claims (13)

  1. PCT国内申请，权利要求书已公开。
CN202080099894.8A 2020-11-23 2020-11-23 测试结构以及测试方法 Pending CN115485833A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/130937 WO2022104805A1 (zh) 2020-11-23 2020-11-23 测试结构以及测试方法

Publications (1)

Publication Number Publication Date
CN115485833A true CN115485833A (zh) 2022-12-16

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ID=81708245

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080099894.8A Pending CN115485833A (zh) 2020-11-23 2020-11-23 测试结构以及测试方法

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CN (1) CN115485833A (zh)
WO (1) WO2022104805A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114935691A (zh) * 2022-07-21 2022-08-23 微龛(广州)半导体有限公司 一种薄膜电阻测量结构及测量方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598523B2 (en) * 2007-03-19 2009-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Test structures for stacking dies having through-silicon vias
FR2964749A1 (fr) * 2010-09-14 2012-03-16 St Microelectronics Sa Procede et dispositif de mesure de fiabilite d'un circuit integre
CN103187403B (zh) * 2011-12-31 2016-03-16 中芯国际集成电路制造(上海)有限公司 半导体失效分析结构及形成方法、检测失效时间的方法
CN104779238B (zh) * 2014-01-10 2018-08-21 中芯国际集成电路制造(上海)有限公司 一种晶圆接合质量的检测结构及检测方法
CN104051021B (zh) * 2014-06-10 2017-05-10 华中科技大学 一种相变存储器热串扰测试方法
CN211743145U (zh) * 2020-02-12 2020-10-23 江苏时代全芯存储科技股份有限公司 测试结构

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WO2022104805A1 (zh) 2022-05-27

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Effective date of registration: 20231205

Address after: Building 2D, 802, Zhongguancun Integrated Circuit Design Park, No. 9 Fenghao East Road, Haidian District, Beijing

Applicant after: Beijing times full core storage technology Co.,Ltd.

Address before: Room 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing 100094

Applicant before: Beijing times full core storage technology Co.,Ltd.

Applicant before: JIANGSU ADVANCED MEMORY SEMICONDUCTOR Co.,Ltd.

Applicant before: Cecil business mission Technology Holdings Ltd.