CN115483127A - Outer periphery coating method, substrate processing apparatus, and storage medium - Google Patents
Outer periphery coating method, substrate processing apparatus, and storage medium Download PDFInfo
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- CN115483127A CN115483127A CN202210545563.3A CN202210545563A CN115483127A CN 115483127 A CN115483127 A CN 115483127A CN 202210545563 A CN202210545563 A CN 202210545563A CN 115483127 A CN115483127 A CN 115483127A
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- 238000000576 coating method Methods 0.000 title claims abstract description 254
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000012545 processing Methods 0.000 title claims abstract description 44
- 238000003860 storage Methods 0.000 title claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 215
- 239000007788 liquid Substances 0.000 claims abstract description 102
- 230000002093 peripheral effect Effects 0.000 claims abstract description 80
- 239000000463 material Substances 0.000 claims abstract description 34
- 239000002904 solvent Substances 0.000 claims abstract description 34
- 230000001678 irradiating effect Effects 0.000 claims abstract description 6
- 238000010030 laminating Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 147
- 230000007246 mechanism Effects 0.000 description 33
- 238000012546 transfer Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 13
- 238000011282 treatment Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Abstract
The invention provides a periphery coating method, a substrate processing apparatus and a storage medium, which can inhibit defects in periphery coating of a substrate. The periphery coating method comprises the following steps: a step (A) of supplying a coating liquid of an ultraviolet curing material to the peripheral portion of a substrate to form a coating film having a width wider than a target width; a step (B) of selectively irradiating ultraviolet rays to cure a predetermined region having the target width in the coating film having the target width; and (C) removing uncured portions of the coating film having a width larger than the target width without being irradiated with the ultraviolet rays by using a solvent.
Description
Technical Field
The invention relates to a periphery coating method, a substrate processing apparatus and a storage medium.
Background
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2014-110386
Disclosure of Invention
Technical problems to be solved by the invention
The technique according to the present invention suppresses defects in the outer periphery coating of the substrate.
Technical solution for solving technical problem
One embodiment of the present invention is a peripheral edge coating method including: a step (A) of supplying a coating liquid of an ultraviolet curing material to a peripheral portion of a substrate to form a coating film having a width wider than a target width; a step (B) of selectively irradiating ultraviolet rays to cure a predetermined region having the target width in the coating film having the target width; and (C) removing uncured portions of the coating film having a width larger than the target width without being irradiated with the ultraviolet rays by using a solvent.
Effects of the invention
According to the present invention, defects in the outer periphery coating of the substrate can be suppressed.
Drawings
Fig. 1 is an explanatory diagram showing a schematic internal configuration of a coating and developing processing system including an outer periphery coating apparatus as a substrate processing apparatus according to the present embodiment.
Fig. 2 is a schematic internal configuration of the front side of the coating and developing system.
Fig. 3 is a diagram showing a schematic internal configuration of the rear surface side of the coating and developing system.
Fig. 4 is a longitudinal sectional view showing a schematic configuration of the outer periphery coating apparatus.
Fig. 5 is a cross-sectional view showing a schematic configuration of the outer periphery coating device.
Fig. 6 is a flowchart showing an example of the outer periphery coating process.
Fig. 7 is a diagram showing the periphery of the front surface of the wafer W in the outer periphery coating process.
Fig. 8 is a diagram for explaining another example of the formation region of the coating film.
Fig. 9 is a partially enlarged cross-sectional view showing an example of a wafer.
Description of the reference numerals
6. Control unit
32. Outer periphery coating device
121. Rotary chuck
160. Liquid supply nozzle
170. Solvent supply nozzle
180. Irradiation nozzle
D1 Coating liquid
D2 Solvent(s)
P target width
R2 region
T1 coating film
U ultraviolet ray
W wafer.
Detailed Description
For example, in a photolithography step in a manufacturing process of a semiconductor device, a resist solution is applied to a semiconductor wafer (hereinafter, referred to as "wafer") as a substrate to form a resist film, the resist film is exposed to light to form a pattern, and then the wafer is subjected to a development process to form a resist pattern on the surface of the wafer.
There is known a peripheral coating method in which a coating liquid is supplied only to the peripheral edge of a wafer to form a coating film (see patent document 1). However, in the conventional peripheral coating, the liquid splashes when the coating liquid is supplied to the peripheral edge portion of the wafer, defects such as generation of defects due to the splashed liquid may occur.
Accordingly, the technique according to the present invention suppresses defects in the outer periphery coating of the substrate.
Hereinafter, the outer periphery coating method and the substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description thereof is omitted.
< coating and developing treatment System >
Fig. 1 is an explanatory diagram showing a schematic internal configuration of a coating and developing processing system including an outer periphery coating apparatus as a substrate processing apparatus according to the present embodiment. Fig. 2 and 3 are schematic internal configurations of the front side and the back side of the coating and developing system 1, respectively.
As shown in fig. 1 to 3, the coating and developing system 1 includes: a cassette station 2 into which a cassette C, which is a container capable of storing a plurality of wafers, is loaded and unloaded; and a processing station 3 having a plurality of various processing apparatuses for performing predetermined processing such as resist coating processing. The coating and developing system 1 has a structure in which a cassette station 2, a process station 3, and an interface station 5 that transfers wafers W between the process station 3 and an exposure apparatus 4 adjacent thereto are integrally connected. The coating and developing system 1 further includes a control unit 6, and the control unit 6 controls the coating and developing system 1 including control of the transport device 70 described later.
The cassette station 2 is divided into, for example, a cassette loading/unloading section 10 and a wafer transfer section 11. For example, the cartridge feeding and discharging unit 10 is provided at the end of the coating and developing system 1 on the negative Y direction (left direction in fig. 1). The cassette loading/unloading unit 10 is provided with a cassette mounting table 12. A plurality of, for example, 4 mounting plates 13 are provided on the cassette mounting table 12. The mounting plates 13 are arranged in a row in the X direction (vertical direction in fig. 1) in the horizontal direction. When the cartridge C is sent to and from the outside of the coating and developing system 1, the cartridge C can be placed on the placement plates 13.
The wafer transfer unit 11 is provided with a transfer device 20 for transferring the wafer W. The conveying device 20 is provided with a conveying path 21 extending in the X direction and a conveying unit 22 movable on the conveying path 21. The transfer unit 22 is also movable in the vertical direction and around the vertical axis (θ direction), and can transfer the wafers W between the cassettes C on the respective mounting plates 13 and a transfer device of the third block G3 of the process station 3, which will be described later.
A plurality of, for example, first to fourth 4 blocks G1, G2, G3, G4 having various devices are provided in the processing station 3. For example, the first block G1 is provided on the front surface side (negative X-direction side in fig. 1) of the processing station 3, and the second block G2 is provided on the back surface side (positive X-direction side in fig. 1) of the processing station 3. Further, a third block G3 is provided on the cassette station 2 side (the negative Y-direction side in fig. 1) of the processing station 3, and a fourth block G4 is provided on the interface station 5 side (the positive Y-direction side in fig. 1) of the processing station 3.
In the first block G1, as shown in fig. 2, a plurality of liquid processing apparatuses, for example, a developing apparatus 30 for performing a developing process on the wafer W, a resist coating apparatus 31 for coating the wafer W with a resist liquid to form a resist film, and a peripheral coating apparatus 32 for supplying a coating liquid to the peripheral edge portion of the wafer W to form a coating film, are arranged in this order from below.
For example, 3 developing apparatuses 30, resist coating apparatuses 31, and outer periphery coating apparatuses 32 are arranged in a horizontal direction. The number and arrangement of the developing apparatuses 30, the resist coating apparatuses 31, and the outer periphery coating apparatuses 32 can be arbitrarily selected.
In the developing apparatus 30 and the resist coating apparatus 31, a predetermined processing liquid is applied to the wafer W by, for example, a spin coating method. In spin coating, for example, the processing liquid is discharged from a discharge nozzle onto the wafer W, and the wafer W is rotated to spread the processing liquid over the surface of the wafer W.
For example, in the second block G2, as shown in fig. 3, a heat treatment apparatus 40 for performing heat treatment such as heating and cooling of the wafer W and a peripheral exposure apparatus 41 for exposing the peripheral edge of the resist film on the wafer W are provided in a vertical direction and a horizontal direction. The number and arrangement of the heat treatment apparatuses 40 and the peripheral exposure apparatuses 41 can be arbitrarily selected.
The third block G3 is provided with an inspection device 50 and a plurality of delivery devices 51. In addition, a plurality of delivery devices 60 are provided in the fourth block G4.
As shown in fig. 1, a wafer transfer area D is formed in an area surrounded by the first to fourth blocks G1 to G4. Arranged in the wafer conveying area D, for example and a transfer device 70 for transferring the wafer W.
The transport device 70 includes, for example, a transport arm 70a that is movable in the Y direction, the θ direction, and the up-down direction. The transfer device 70 is capable of moving the transfer arm 70a holding the wafer W in the wafer transfer area D and transferring the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. The transfer device 70 is configured by a plurality of devices arranged vertically as shown in fig. 3, for example, and can transfer the wafer W to a predetermined device having the same height as the blocks G1 to G4, for example.
In addition, a shuttle 71 for linearly transferring the wafer W between the third block G3 and the fourth block G4 is provided in the wafer transfer area D.
The shuttle 71 can linearly move the supported wafer W in the Y direction, and transport the wafer W between the delivery unit 51 of the third block G3 and the delivery unit 60 of the fourth block G4 having the same height.
As shown in fig. 1, a conveying device 72 is provided on the X-direction positive side of the third block G3. The conveyance device 72 includes, for example, a conveyance arm 72a that is movable in the θ direction and the up-down direction. The transfer device 72 can move the transfer arm 70a holding the wafer W up and down, and transfer the wafer W to each of the transfer devices 51 in the third block G3.
The interface station 5 is provided with a transport device 73 and a transfer device 74. The conveyance device 73 includes, for example, a conveyance arm 73a that is movable in the θ direction and the up-down direction. The transfer device 73 can hold the wafer W by the transfer arm 73a and transfer the wafer W between the delivery devices 60 and 74 and the exposure device 4 in the fourth block G4.
The control unit 6 is a computer having a processor such as a CPU, a memory, and the like, and has a program storage unit (not shown). The program storage unit stores a program for controlling the operation of the drive systems such as the various processing apparatuses and the various transport apparatuses and controlling the wafer processing described later. The program may be recorded in a non-transitory computer-readable storage medium M, and installed from the storage medium M to the control unit 6. The storage medium M may be a temporary storage medium or a non-temporary storage medium. Part or all of the program may also be implemented by dedicated hardware (circuit board).
< wafer treatment >
Next, an example of wafer processing using the coating and developing system 1 will be described. The following processing is performed under the control of the control unit 6.
In the wafer processing using the coating and developing processing system 1, first, the wafer W is taken out from the cartridge C on the cartridge stage 12 by the carrying device 20 and carried to the inspection device 50 of the processing station 3. In the inspection apparatus 50, an imaging unit (not shown) included in the inspection apparatus 50 images the surface of the wafer W, and outputs the imaging result to the control unit 6. The imaging result is used for inspection of the wafer W, for example.
Subsequently, the wafer W is transferred to the heat treatment apparatus 40 in the second block G2 by the transfer apparatus 70, and temperature adjustment processing is performed. Thereafter, the wafer W is conveyed to the resist coating apparatus 31 of the first block G1, and a resist film is formed on the wafer W. Then, the wafer W is transferred to the heat treatment apparatus 40 and subjected to a Pre-Bake treatment (PAB: pre-Applied Bake). In addition, in the pre-Bake treatment, PEB (Post Exposure Bake) at the latter stage, PEB) treatment and Post-baking treatment, the same heat treatment was performed. Wherein the heat treatment apparatuses 40 for the respective heat treatments are different from each other.
Then, the wafer W is transported to the periphery exposure apparatus 41, and is subjected to periphery exposure processing.
Subsequently, the wafer W is transported to the exposure apparatus 4, and exposure processing is performed in a predetermined pattern.
Subsequently, the wafer W is transferred to the heat treatment apparatus 40 and PEB treatment is performed. Then, the wafer W is transported to the development processing apparatus 30, for example, and is subjected to development processing. After the development process is completed, the wafer W is transferred to the heat treatment apparatus 40 and post-baking process is performed.
Next, the wafer W is transported to the outer periphery coating apparatus 32, and an outer periphery coating process is performed to form an annular coating film on the surface of the peripheral edge portion of the wafer W. The details of the outer periphery coating process will be described later.
Thereafter, the wafer W is transferred to the cassette C on the cassette stage 12 by the transfer unit 22 or the like, and a series of photolithography steps are completed.
< outer circumference coating device 32>
Next, the configuration of the outer periphery coating device 32 will be described with reference to fig. 4 and 5. Fig. 4 and 5 are a longitudinal sectional view and a transverse sectional view, respectively, showing the schematic configuration of the outer periphery coating device 32.
As shown in fig. 4 and 5, the outer periphery coating apparatus 32 includes a processing container 120 that can be sealed inside. A loading/unloading port (not shown) for the wafer W is formed in a side surface of the processing container 120, and an opening/closing member (not shown) is provided in the loading/unloading port.
The process container 120 is provided with a spin chuck 121 serving as a spin holding unit for holding and rotating the wafer W. The spin chuck 121 has a horizontal upper surface, and a suction port (not shown) for sucking the wafer W, for example, is provided in the upper surface. The wafer W can be sucked and held by the spin chuck 121 by suction from the suction port.
The spin chuck 121 is connected to a chuck drive mechanism 122, and can be rotated at a desired speed by the chuck drive mechanism 122. The chuck drive mechanism 122 has a rotation drive source (not shown) such as a motor that generates a drive force for rotating the spin chuck 121. The wafer W is rotated by rotating the spin chuck 121 by the chuck drive mechanism 122.
The chuck drive mechanism 122 is provided with an elevating drive source such as an air cylinder, and the spin chuck 121 can be elevated by the chuck drive mechanism 122. The wafer W is raised and lowered by raising and lowering the spin chuck 121 by the chuck drive mechanism 122. The chuck drive mechanism 122 is controlled by the control section 6.
In addition, a lift pin 123 for supporting and lifting the wafer W from below is provided so as to surround the lower side of the spin chuck 121. The lift pin 123 is connected to a pin driving mechanism 124, and can be lifted and lowered by the pin driving mechanism 124. The lift pins 123 can be projected to a position higher than the upper surface of the spin chuck 121 by the pin drive mechanism 124, and the wafer W can be transferred to and from the spin chuck 121.
An outer cup 130 for receiving and collecting liquid scattered or dropped from the wafer W and an inner cup 140 positioned on the inner circumferential side of the outer cup 130 are provided around the spin chuck 121. The outer cup 130 surrounds the outer circumferential side of the wafer W rotated while being held by the spin chuck 121, and the inner cup 140 is positioned below the wafer W held by the spin chuck 121.
As shown in fig. 5, guide rails 150A, 150B extending in the Y direction (the left-right direction in fig. 5) are formed on the negative X direction (the lower direction in fig. 5) side of the outer cup 130. The guide rails 150A, 150B are formed, for example, from the outside of the outer cup 130 on the negative Y direction (left direction in fig. 5) side to the outside on the positive Y direction (right direction in fig. 5) side. The guide rail 150A is provided with 2 arms 151 and 152, and the guide rail 150B is provided with 1 arm 153.
A liquid supply nozzle 160 serving as a coating liquid supply unit is supported by the first arm 151. The liquid supply nozzle 160 supplies the coating liquid of the ultraviolet curable material to the surface of the wafer W held by the spin chuck 121. The coating liquid of the ultraviolet curable material is, for example, an ultraviolet curable resin, which is different from the resist liquid used in the resist coating apparatus 31. The ultraviolet curable resin includes, for example, a monomer, an oligomer, a photopolymerization initiator, and the like, and when irradiated with ultraviolet light, changes from a liquid monomer state to a solid polymer state by photopolymerization and cures. The coating liquid of the ultraviolet curable material has fluidity at the stage of being supplied from the liquid supply nozzle 160 to the surface of the wafer W.
The first arm 151 is movable on the guide rail 150A by a nozzle drive mechanism 161. The nozzle drive mechanism 161 includes a movement drive source (not shown) such as a motor that generates a drive force for moving the first arm 151. By moving the first arm 151 on the guide rail 150A by the nozzle driving mechanism 161, the liquid supply nozzle 160 can be moved from the standby portion 162 provided on the outer side of the Y direction negative side of the outer cup 130 to above the peripheral edge portion of the wafer W in the outer cup 130. The nozzle drive mechanism 161 is provided with a lift drive source such as an air cylinder, and the first arm 151 can be lifted and lowered by the nozzle drive mechanism 161. The liquid supply nozzle 160 is raised and lowered by raising and lowering the first arm 151 by the nozzle drive mechanism 161.
The nozzle drive mechanism 161 is controlled by the control unit 6.
The liquid supply nozzle 160 is connected to a supply source (not shown) of the coating liquid of the ultraviolet curable material. A supply pipe (not shown) connecting the liquid supply nozzle 160 and the supply source is provided with a supply device group (not shown) for controlling the supply of the coating liquid of the ultraviolet curable material from the supply source to the liquid supply nozzle 160. The supply equipment group includes, for example, a supply valve for switching between supply and stop of the coating liquid for the ultraviolet curable material, and a flow rate control valve for controlling the flow rate of the coating liquid.
The above-described supply equipment group is controlled by the control section 6.
A solvent supply nozzle 170 serving as a solvent supply unit is supported by the second arm 152. The solvent supply nozzle 170 supplies a solvent to the surface of the wafer W held by the spin chuck 121. The solvent can remove only the uncured portion of the coating film formed on the wafer W by supplying the coating liquid of the ultraviolet curable material without removing the cured portion.
The second arm 152 is movable on the guide rail 150A by the nozzle drive mechanism 171. The nozzle drive mechanism 171 includes a movement drive source (not shown) such as a motor that generates a drive force for moving the second arm 152. By moving the second arm 152 on the guide rail 150A by the nozzle driving mechanism 171, the solvent supply nozzle 170 can be moved from the standby portion 172 provided on the outer side of the Y direction positive side of the outer cup 130 to above the peripheral edge portion of the wafer W in the outer cup 130. The nozzle driving mechanism 171 is provided with an elevating/lowering driving source such as an air cylinder, and the second arm 152 can be elevated/lowered by the nozzle driving mechanism 171. The second arm 152 is moved up and down by the nozzle driving mechanism 161, and the solvent supply nozzle 170 is moved up and down.
The nozzle drive mechanism 171 is controlled by the control unit 6.
The solvent supply nozzle 170 is connected to a solvent supply source (not shown). A supply pipe (not shown) connecting the solvent supply nozzle 170 and the supply source is provided with a supply device group (not shown) for controlling the supply of the solvent from the supply source to the solvent supply nozzle 170. The supply equipment group includes, for example, a supply valve for switching between supply and stop of the solvent and a flow rate control valve for controlling the flow rate of the solvent.
The above-described supply equipment group is controlled by the control section 6.
An irradiation nozzle 180 as an irradiation portion is supported by the third arm 153. The irradiation nozzle 180 irradiates the surface of the wafer W held by the spin chuck 121 with ultraviolet rays from above. The wavelength of the ultraviolet light emitted from the irradiation nozzle 180 is, for example, 10 to 500nm. The irradiation nozzle 180 includes a light source (not shown) for emitting ultraviolet rays, for example. The light source is controlled by the control section 6.
The third arm 153 is movable on the guide rail 150B by the nozzle drive mechanism 181. The nozzle drive mechanism 181 includes a movement drive source (not shown) such as a motor that generates a drive force for moving the third arm 153. By moving the third arm 153 on the guide rail 150B by the nozzle driving mechanism 181, the irradiation nozzle 180 can be moved from the outside of the Y direction positive side of the outer cup 130 to above the peripheral edge portion of the wafer W in the outer cup 130. The nozzle drive mechanism 181 is provided with an elevating drive source such as an air cylinder, and the third arm 153 is able to be elevated by the nozzle drive mechanism 181. The third arm 153 is moved up and down by the nozzle driving mechanism 181, whereby the irradiation nozzle 180 is moved up and down.
The nozzle drive mechanism 181 is controlled by the control unit 6.
The liquid supply nozzle 160 is connected to a supply source (not shown) of an application liquid of an ultraviolet curing material. A supply pipe (not shown) connecting the liquid supply nozzle 160 and the supply source is provided with a supply device group (not shown) for controlling the supply of the coating liquid of the ultraviolet curable material from the supply source to the liquid supply nozzle 160. The supply equipment group includes, for example, a supply valve for switching between supply and stop of the coating liquid for the ultraviolet curable material, and a flow rate control valve for controlling the flow rate of the coating liquid.
The above-described supply equipment group is controlled by the control section 6.
The outer periphery coating device 32 is connected to a control unit 6, and the control unit 6 controls the nozzle driving mechanisms 161, 171, and 181, the coating liquid of the ultraviolet curing material, the supply unit for supplying the solvent, the light source of the irradiation nozzle 180, and the like, thereby forming a coating film substantially concentric with and annular to the wafer W along the peripheral edge portion of the front surface of the wafer W. The coating film is used, for example, as a protective film for the peripheral edge of the resist pattern. By providing the protective film in this manner, it is possible to prevent the substrate from being exposed by removing the peripheral edge portion of the resist pattern or the resist pattern from having an abnormal shape when the wafer W after the protective film is formed is subjected to etching treatment.
< outer periphery coating treatment >
Next, an example of the outer periphery coating process in the outer periphery coating device 32 will be described. Fig. 6 is a flowchart showing an example of the outer periphery coating process. Fig. 7 is a diagram showing the periphery of the front surface of the wafer W in the outer periphery coating process. The following processing is performed under the control of the control unit 6.
(step S1)
As shown in fig. 6, for example, first, the wafer W is carried into the outer periphery coating device 32 by the carrier device 70 (step S1). The wafer W loaded into the outer periphery coating device 32 is transferred from the transfer device 70 to the lift pins 123 which have been raised in advance and are on standby, and then the lift pins 123 are lowered and transferred to the spin chuck 121 in the outer cup 130 to be sucked and held.
(step S2)
Next, as shown in fig. 7 (a), a coating liquid D1 of an ultraviolet curable material is supplied to the peripheral edge portion of the wafer W to form a coating film T1 having a width larger than the target width P (step S2). Specifically, for example, when the unnecessary portion H of the coating film T1 is removed in step S5 described later, the wafer W is rotated so that the unnecessary portion H is formed on the center side of the wafer W, and the coating liquid D1 of the ultraviolet curable material is supplied during the rotation, so that the annular coating film T1 having a width larger than the target width P is formed on the surface of the peripheral portion of the wafer W.
More specifically, the liquid supply nozzle 160 is moved to above the peripheral edge of the wafer W. Thereafter, the wafer W held by the spin chuck 121 is rotated, and during the rotation, the coating liquid D1 of the ultraviolet curable material is supplied from the liquid supply nozzle 160 to the inside of the region R1 of the surface of the peripheral edge portion of the wafer W where the coating film of the target width P is formed. Thus, the annular coating film T1 wider than the target width P is formed on the surface of the peripheral edge portion of the wafer W.
When the coating liquid D1 of the ultraviolet curable material is supplied, as shown in the drawing, the liquid supply nozzle 160 may be inclined so that the coating liquid D1 of the ultraviolet curable material is supplied from the center side of the wafer W toward the outer periphery of the wafer W. More specifically, when the coating liquid D1 of the ultraviolet curable material is supplied, the liquid supply nozzle 160 may be inclined so that the coating liquid D1 of the ultraviolet curable material is supplied from the center side of the wafer W toward the outer periphery of the wafer W in side view from the target width P. This can prevent the following. That is, although the coating liquid of the ultraviolet curable material discharged from the liquid supply nozzle 160 may collide with the surface of the wafer W and splash back, the coating liquid that splashes back can be prevented from adhering to the center side, that is, the inner side of the wafer W with respect to the region R1 where the annular coating film of the target width P is formed.
The width of the annular coating film formed in step S2 is, for example, 0.5mm or more larger than the target width, and the distance L from the inner peripheral edge to the peripheral edge of the wafer W is less than 10mm. The rotation speed of the wafer W in step S2 is, for example, 200 to 700rpm.
(step S3)
Next, the wafer W is rotated in a state where the coating liquid D1 of the ultraviolet curable material is not supplied, and the fluidity of the coating film having a width larger than the target width is reduced.
Specifically, after the supply of the coating liquid D1 of the ultraviolet curable material from the liquid supply nozzle 160 is stopped, the liquid supply nozzle 160 is retracted out of the outer cup 130, and the wafer W is continuously rotated following step S2. As a result, a part of the coating liquid constituting the coating film T1 on the surface of the peripheral edge portion of the wafer W is discharged, and as a result, the fluidity of the coating film T1 is lowered.
In step S3, the fluidity of the coating film T1 is reduced to such an extent that the coating film T1 is not displaced by the rotation of the wafer W when the wafer W is rotated and the coating film is irradiated with ultraviolet rays in step S4 described later. However, in this step S3, the fluidity of the coating film T1 does not completely disappear. That is, the coating film T1 is not dried in step S3. When the coating film T1 is dried in step S3, a bulge (hump) may occur at the outer peripheral end and the inner peripheral end of the surface of the coating film T1, but the coating film T1 is not dried in step S3 as described above, and thus the bulge can be suppressed.
For example, in step S3, the wafer W is rotated at a rotation speed at which the coating liquid D1 discharged from the rotating wafer W does not collide with the outer cup 130. This can prevent the generation of droplets of the application liquid D1 that collide with the outer cup 130. At such a rotation speed, the fluidity of the coating film can be reduced to such an extent that the coating film T1 is not displaced by the rotation of the wafer W in step S3.
The rotation speed of the wafer W in step S3 may be equal to or higher than that in step S2.
In addition, step S3 may be omitted.
(step S4)
Then, a predetermined region R2 having the target width P in the coating film T1 having a width larger than the target width P is selectively irradiated with the ultraviolet light U, and the predetermined region R2 is cured.
Specifically, the irradiation nozzle 180 is moved to above the peripheral edge of the wafer W. Further, the wafer W is continuously rotated in step S3, and ultraviolet rays from the irradiation nozzle 180 are irradiated to the surface of the peripheral edge portion of the wafer W during the rotation. Thereby, the ultraviolet rays from the irradiation nozzle 180 are irradiated to the predetermined annular region R2 having the target width P in the coating film T1 having the width larger than the target width P formed on the peripheral edge portion of the front surface of the wafer W, and the predetermined annular region R2 is selectively cured. Further, the aforementioned unnecessary portion H is not cured.
(step S5)
Then, as shown in fig. 7, the unnecessary portion H, which is an uncured portion of the coating film T1 wider than the target width P without being irradiated with the ultraviolet light U, is removed by the solvent D2, thereby forming a cured coating film T2 of the target width P.
Specifically, the irradiation of the ultraviolet light U from the irradiation nozzle 180 is stopped, and the irradiation nozzle 180 is evacuated from the outer cup 130, and instead, the solvent supply nozzle 170 is moved to above the peripheral edge portion of the wafer W. Further, the wafer W is continuously rotated in step S4, and the solvent D2 is supplied from the solvent supply nozzle 170 to the surface of the peripheral edge portion of the wafer W during the rotation. Thereby, the above-described unnecessary portion H, which is an uncured portion in the annular coating film T1 having a width larger than the target width P, is removed, and an annular coating film T2 having the target width P is formed.
In step S5, the solvent D2 is preferably supplied from a position closer to the center of the wafer than the uncured portion, i.e., the unnecessary portion H. This makes it possible to remove the droplet Z of the coating liquid D1 splashed back and adhering to the inner side of the unnecessary portion H in step S2.
In step S5, as in step S2, when the solvent is supplied, the solvent supply nozzle 170 may be inclined so that the solvent D2 is supplied from the center side of the wafer W toward the outer periphery of the wafer W as shown in the drawing.
(step S6)
Thereafter, the wafers W are sent out in the reverse order of the time of sending in the wafers W. Thereby, the series of outer periphery coating processes is ended.
< main effects of the present embodiment >
In the above outer periphery coating process, the control unit 6 performs the following control:
control of supplying the coating liquid D1 of the ultraviolet-curable material to the peripheral edge of the wafer W to form the coating film T1 wider than the target width P
Control of selectively irradiating a predetermined region R2 having the target width P in the coating film T1 having a width larger than the target width P with ultraviolet light U to cure the predetermined region R2
Control to remove the unnecessary portion H of the coating film T1 wider than the target width P, which is not cured by the ultraviolet light U, by the solvent D2.
That is, in the present embodiment, after the coating film T1 wider than the target width P is formed, only the necessary portion is cured, and the unnecessary portion H is cleaned and removed.
Therefore, even if the spattering occurs when the coating liquid D1 of the ultraviolet curable material is supplied to the peripheral edge portion of the wafer W, the spattering can be removed by the solvent D2. The occurrence of defects and the like due to the splashed liquid can be suppressed. That is, defects in the outer periphery coating of the wafer W can be suppressed.
In the outer periphery coating process of the present embodiment, as is apparent from the above description, it is not necessary to heat the wafer W after the coating film is formed. In the outer periphery coating process, when the wafer W after the coating film formation needs to be heated, bubbles generated in the coating film during the coating film formation expand due to the heating of the wafer W, and a portion including the bubbles may be broken, thereby forming holes in the coating film. In contrast, in the present embodiment, as described above, since heating of the wafer W after the coating film formation is not required, even if bubbles generated in the coating film T1 are generated at the time of coating film formation, the bubbles do not expand, and therefore, it is possible to suppress the holes from being formed in the coating films T1 and T2.
In the conventional outer periphery coating process, since the entire portion to which the coating liquid is applied is a coating film, the inner peripheral end of the annular coating film is undulated (blurred) due to the spreading pattern and release accuracy of the coating liquid. According to the outer periphery coating process of the present embodiment, even if the undulation is generated at the inner peripheral end of the annular coating film T1 when the annular coating film T1 is formed, the undulated portion can be removed. That is, according to the present embodiment, the annular coating film T2 having no undulation at the inner peripheral end can be obtained. As a result, the device formation region in the wafer W can be effectively used.
The spreading pattern of the coating liquid varies depending on the conditions (for example, the rotation speed of the wafer W at the time of supplying the coating liquid, the amount of liquid discharged) and the type of the chemical liquid under which the coating film T1 is formed. Therefore, in the conventional outer periphery coating treatment, it is necessary to adjust the above conditions for each kind of chemical solution, for example. In contrast, the coating process of the present embodiment does not require adjustment of the above conditions for each chemical solution, and thus has high robustness (stability).
< Another example of the formation region of the coating film >
In the above example, the coating film of the ultraviolet curable material is formed on the surface of the peripheral edge portion of the wafer W except for the bevel surface. In addition, as shown in fig. 8, a coating film T1a of an ultraviolet-curable material having a target width may be formed on the surface of the peripheral portion of the wafer W including the bevel W1 by the outer peripheral treatment according to the present embodiment.
When the coating film T1a of the ultraviolet curable material having a target width is formed on the inclined surface W1, the optical axis of the irradiation nozzle 180 may be changed, and the optical axis may be adjusted according to the irradiation target area, for example. This also enables the coating film T1a of the ultraviolet-curable material to be appropriately formed on the bevel W1 of the wafer W. Instead of making the optical axis of the irradiation nozzle 180 variable, it is also possible to change as described below. That is, the ultraviolet rays from the light source may be reflected by a mirror, and the reflected light may be irradiated to the inclined surface W1, and the angle of the mirror may be changed to adjust the optical path, which is the angle of the mirror, according to the irradiation target area.
In the outer periphery coating process of the present embodiment, since drying of the coating film is not required and the wafer W does not need to be rotated at high speed, even when the coating film is formed on the inclined surface W1 of the wafer W, the lumps of the coating liquid constituting the coating film can be prevented from flying off the inclined surface W1. Therefore, it is possible to suppress formation of a dent (pit) in the coating film due to the flying-out of the lump of the coating liquid.
In addition, according to the outer periphery coating process of the present embodiment, the region of the wafer W on the bevel W1 where the coating film is formed can be easily adjusted.
The technique according to the present embodiment can also be applied to a case where an ultraviolet-curable material coating film is formed on the back surface of the peripheral edge portion of the wafer W.
< Another example of the outer periphery coating treatment >
Fig. 9 is a partially enlarged cross-sectional view showing an example of a wafer.
As shown in fig. 9, a plurality of existing films having different outer peripheral edge positions may be formed on the wafer W. In the example shown in the figure, 3 existing films F1 to F3 are formed on the wafer W.
When a plurality of existing films are formed or 1 existing film is formed in this manner, basically the same processing as the outer periphery coating processing described with reference to fig. 7 is performed. However, in the above case, the control unit 6 may determine the irradiation range of the ultraviolet ray in the above step S4 based on the position of the outer peripheral edge of the existing film. In the above case, the area in which the coating film is formed in step S2 may be determined in advance to have a sufficiently large range, or may be determined by the control unit 6 based on the position of the outer peripheral edge of the existing film.
The peripheral edge position of the existing film is acquired, for example, for each wafer W by referring to device layer (device layer) information associated with identification information of the wafer W. The device layer information is a list of information on the films constituting each layer (layer) on the wafer W, and includes information on the film type, information on the process flow before and after, and the like, for example.
The position of the outer peripheral edge of the existing film may be obtained from an image of the wafer W captured by an imaging device such as the inspection device 50.
When the existing films F1 to F3 having different positions of the outer peripheral edge are formed as described above, in the above-described step S3, as shown in fig. 9, a region constituting a part of a region from the outer peripheral edge of the existing film F3 located closest to the center of the wafer to the outer peripheral edge of the wafer W may be set as a protection target region, and the protection target region may be irradiated with ultraviolet rays. In the example shown in the figure, the outer peripheral edge of the existing film F3 and the outer peripheral edge of the wafer W not covered with the existing films F1 to F3 are defined as protection regions A1 and A2.
In this manner, even when there are a plurality of portions to be protected at the outer peripheral ends of the existing films F1 to F3 and the peripheral end of the wafer W not covered with the existing films F1 to F3, the coating film T2 serving as the protective film can be formed simultaneously at the plurality of portions to be protected by one outer peripheral coating process. The "portion to be protected" is set to a portion where corrosion suppression is required in etching later, for example.
Further, for example, the control unit 6 may determine a region to be protected based on the device layer information. The device layer information includes information on material characteristics of the film type and information on the process flow before and after the film type. The control unit 6 may determine whether or not protection is required in the subsequent process and whether or not protection of the material of the existing film is required based on the information, and determine the ultraviolet irradiation range, which is the region to be protected, based on the determination result. The desired location may be determined based on input from the user.
< other example of outer periphery coating treatment >
The above steps S2 to S5 may be repeated in this order to increase the thickness of the coating film by laminating coating films having a desired width. The second step S2 is performed on the cured coating film obtained by the steps up to the first step S5, thereby forming a coating film in a range including the cured coating film and the inner side thereof. In this case, the coating film is raised upward beyond the other regions in the range of the coating film in the cured state. After steps S3 to S5 are similarly performed, the coating film in the other region is removed, and the thickness of the coating film in the cured state is increased to a target width. Even if the flow rate and the rotation speed are increased, since there is a limit to the thickness obtained by one supply and curing depending on the type of liquid and the fluidity of the viscosity, and it is not desirable that the liquid is spread out of the range to be coated on the substrate, it is effective for increasing the film thickness in a local region on the substrate, and for laminating a coating film obtained by repeating the curing a plurality of times as described above.
< modification example >
In the above example, the outer periphery coating process is performed only by the outer periphery coating device 32, but the ultraviolet irradiation in the outer periphery coating process may be performed by the periphery exposure device 41, and the other processes in the outer periphery coating process may be performed by the outer periphery coating device 32.
The embodiments disclosed herein are illustrative in all respects and should not be considered restrictive. The above-described embodiments may be omitted, replaced, or changed in various ways without departing from the scope of the appended claims and the gist thereof.
Claims (11)
1. A peripheral edge coating method, comprising:
a step (A) of supplying a coating liquid of an ultraviolet curing material to the peripheral portion of a substrate to form a coating film having a width wider than a target width;
a step (B) of selectively irradiating ultraviolet rays to cure a predetermined region having the target width in the coating film having the target width; and
a step (C) of removing, with a solvent, a portion of the coating film wider than the target width, which is not cured by the irradiation of the ultraviolet rays.
2. The peripheral edge coating method according to claim 1, wherein:
the step (B) of irradiating ultraviolet rays while rotating the substrate,
the peripheral edge coating method may further include a step (D) of rotating the substrate without supplying the coating liquid before the step (B) to lower the fluidity of the coating film formed in the step (a) and having a width larger than the target width.
3. The peripheral edge coating method according to claim 2, wherein:
the step (D) rotates the substrate at a rotation speed at which the coating liquid discharged from the rotating substrate does not collide with a cup surrounding the outer periphery of the rotating substrate.
4. The peripheral edge coating method according to claim 1, wherein:
the step (a) is performed by supplying the coating liquid while rotating the substrate so that an unnecessary portion of the coating film to be removed in the step (C) is formed at the center side of the substrate.
5. The peripheral edge coating method according to claim 4, wherein:
the step (C) supplies the solvent from a position closer to the center of the substrate than the unnecessary portion.
6. The peripheral edge coating method according to claim 4, wherein:
the step (a) supplies the coating liquid from the center side of the substrate toward the outer periphery of the substrate.
7. The peripheral edge coating method according to any one of claims 1 to 6, comprising:
a step of determining the irradiation range of the ultraviolet ray in the step (B) based on the position of the outer peripheral end of the existing film when the existing film has already been formed on the substrate at the start of the step (a).
8. The peripheral edge coating method according to claim 7, wherein:
in the case where a plurality of existing films having different outer peripheral edge positions are formed, the step (B) irradiates the ultraviolet light to a protection target region constituting a part of a region from an outer peripheral edge of the existing film located closest to a center of the substrate to an outer peripheral edge of the substrate.
9. The peripheral edge coating method according to any one of claims 1 to 6, wherein:
repeating the steps (A) to (C) to increase the thickness of the coating film by laminating the coating films having a target width.
10. A computer-readable storage medium, characterized in that:
the storage medium stores a program for running on a computer that controls a control section of a substrate processing apparatus, and when the computer runs the program, causes the substrate processing apparatus to execute the peripheral edge coating method according to any one of claims 1 to 9.
11. A substrate processing apparatus for processing a substrate, comprising:
a rotation holding part for holding the substrate and rotating the substrate;
a coating liquid supply unit configured to supply a coating liquid of an ultraviolet curing material to the substrate held by the rotation holding unit;
an irradiation unit configured to irradiate ultraviolet rays onto the substrate held by the rotation holding unit;
a solvent supply unit configured to supply a solvent to the substrate held by the rotation holding unit; and
a control part for controlling the operation of the display device,
the substrate processing apparatus performs control as follows:
a control step of supplying the coating liquid to a peripheral portion of the substrate to form a coating film having a width larger than a target width;
a control of selectively irradiating a predetermined region having the target width in the coating film having the target width with ultraviolet rays to cure the predetermined region; and
removing the coating film wider than the target width by using a solvent the uncured portion of the substrate to which the ultraviolet rays are not irradiated.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-091665 | 2021-05-31 | ||
| JP2021091665A JP2022184046A (en) | 2021-05-31 | 2021-05-31 | Outer periphery coating method, substrate processing apparatus, and storage medium |
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| Publication Number | Publication Date |
|---|---|
| CN115483127A true CN115483127A (en) | 2022-12-16 |
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| CN202210545563.3A Pending CN115483127A (en) | 2021-05-31 | 2022-05-19 | Outer periphery coating method, substrate processing apparatus, and storage medium |
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| Country | Link |
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| JP (1) | JP2022184046A (en) |
| KR (1) | KR20220162057A (en) |
| CN (1) | CN115483127A (en) |
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| JP5779168B2 (en) | 2012-12-04 | 2015-09-16 | 東京エレクトロン株式会社 | Peripheral part coating apparatus, peripheral part coating method, and peripheral part coating recording medium |
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2021
- 2021-05-31 JP JP2021091665A patent/JP2022184046A/en active Pending
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- 2022-05-19 CN CN202210545563.3A patent/CN115483127A/en active Pending
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| JP2022184046A (en) | 2022-12-13 |
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