CN108630529B - Coating treatment device and cup body - Google Patents
Coating treatment device and cup body Download PDFInfo
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- CN108630529B CN108630529B CN201810207953.3A CN201810207953A CN108630529B CN 108630529 B CN108630529 B CN 108630529B CN 201810207953 A CN201810207953 A CN 201810207953A CN 108630529 B CN108630529 B CN 108630529B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Abstract
The invention provides a coating processing device for coating a coating liquid on a substrate in a rotating mode, which prevents the coating liquid from being rebounded by an airflow control plate arranged in a cup body and scattering on the surface of a wafer. The resist coating apparatus includes a cup that houses a spin chuck (121) and is evacuated from the bottom, the cup including: an airflow control unit (151) located on the top side of the wafer (W) held by the spin chuck (121) and surrounding the outer periphery of the wafer (W); and a support part (153) for supporting the gas flow control part, one end of the support part is connected with the inner peripheral surface of the cup body (125), the other end is positioned at the top side of the one end and is connected with the gas flow control part, a1 st hole (153 a) with a shape penetrating in the direction vertical to the rotation axis of the wafer is formed on the support part, and a2 nd hole (153 b) with a shape penetrating in the rotation axis direction of the wafer is formed at the position lower than the 1 st hole.
Description
Technical Field
The present invention relates to a coating apparatus for coating a substrate with a coating liquid and a cup used in the coating apparatus.
Background
For example, in a photolithography process in a manufacturing process of a semiconductor device: for example, a coating process is performed in which a predetermined coating liquid is applied to a semiconductor wafer (hereinafter, referred to as "wafer") as a substrate to form a coating film such as an antireflection film or a resist film.
Among the above coating processes, a so-called spin coating method is widely used, which is: the coating liquid is supplied from the nozzle to the center of the rotating wafer, and the coating liquid is diffused on the wafer by centrifugal force, thereby forming a coating film on the wafer. In a rotary coating apparatus for performing a spin coating method, a container called a cup (cup) is provided to prevent a coating liquid scattered from a surface of a rotating wafer from scattering around. Further, in order to prevent the resist liquid scattered from the edge of the wafer from flying above the cup as mist when the wafer is rotated from contaminating the outside of the cup, the gas is exhausted from the bottom of the cup.
It is known that when coating is performed in a rotating manner and the cup is evacuated from the bottom, the thickness of the coating film on the outer periphery of the wafer increases. In order to prevent this, in the coating processing apparatus disclosed in patent document 1, an airflow control plate that controls airflow in the vicinity of the wafer surrounding the outer periphery of the rotated wafer is provided in the cup.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2001-189266
Disclosure of Invention
Technical problem to be solved by the invention
However, when the airflow control plate is provided as in patent document 1, the coating liquid scattered from the wafer may be bounced back by the airflow control plate and scattered onto the surface of the wafer depending on the position of the airflow control plate with respect to the wafer being rotated or the rotation speed of the wafer during coating film formation.
In view of the above problems, an object of the present invention is to prevent a coating liquid from being splashed back and scattered onto the surface of a wafer by an airflow control mechanism provided in a cup in a coating processing apparatus for coating a coating liquid on a substrate in a so-called spin type as described above.
Means for solving the problems
In order to achieve the above object, the present invention provides a coating apparatus for coating a substrate with a coating liquid, the coating apparatus including: a substrate holding unit for holding and rotating a substrate; a coating liquid supply member for applying a coating liquid to the substrate held by the substrate holding portion; and a cup for accommodating the substrate holding portion and exhausting air from the bottom, the cup comprising: an airflow control unit located at the top side of the substrate held by the substrate holding unit and surrounding the outer periphery of the substrate; and a support portion for supporting the airflow control portion, one end portion of the support portion being connected to an inner peripheral surface of the cup body, and the other end portion being connected to the airflow control portion positioned on a top side of the one end portion, wherein the support portion is formed with a1 st hole having a shape penetrating in a direction perpendicular to a rotation axis of the substrate, and a2 nd hole having a shape penetrating in the rotation axis direction of the substrate is formed at a position below the 1 st hole.
According to the present invention, since the gas flow control plate is positioned on the top side of the substrate and the 1 st hole having a shape penetrating in the direction perpendicular to the rotation axis of the substrate is formed in the support portion supporting the gas flow control portion, the coating liquid scattered from the wafer is not returned by the gas flow control plate or the support portion. Therefore, the coating liquid can be prevented from being splashed back and scattered onto the surface of the wafer by the airflow control structure provided in the cup.
Preferably, the total area of the 1 st hole is formed larger than the total area of the 2 nd hole.
Preferably, the 1 st hole is formed in the support portion at a position facing an outer peripheral end of the substrate held by the substrate holding portion.
The position facing the outer peripheral end of the substrate held by the substrate holding portion is, for example, a portion ranging from 0.8mm to 4mm above the surface of the substrate to 2mm to 5mm below the surface of the substrate.
Another aspect of the present invention provides a cup body formed in a bottomed cylindrical shape having an open top, and configured to be evacuated from a bottom, the cup body including: an annular air flow control section centered on a predetermined axis; and a support portion for supporting the airflow control portion, one end portion of the support portion being connected to an inner peripheral surface of the cup body, and the other end portion of the support portion being positioned on a top side of the one end portion being connected to the airflow control portion, wherein the support portion is formed with a1 st hole having a shape penetrating in a direction perpendicular to the predetermined axis, and the support portion is formed with a2 nd hole having a shape penetrating in the direction of the predetermined axis at a position outside the 1 st hole.
Effects of the invention
According to the present invention, the coating liquid can be prevented from being splashed back and scattered onto the surface of the wafer by the airflow control plate provided in the cup.
Drawings
Fig. 1 is a schematic plan view showing the configuration of a substrate processing system including a coating processing apparatus according to the present embodiment.
Fig. 2 is a schematic front view showing the configuration of a substrate processing system including the coating processing apparatus according to the present embodiment.
Fig. 3 is a schematic rear view showing the configuration of a substrate processing system including the coating processing apparatus according to the present embodiment.
Fig. 4 is a longitudinal sectional view schematically showing the structure of the resist coating apparatus.
Fig. 5 is a schematic cross-sectional view showing the structure of the resist coating apparatus.
Fig. 6 is a perspective view of the intermediate cup.
Fig. 7 is a top view of the intermediate cup.
Fig. 8 is a sectional view for explaining the shape of the intermediate cup.
Fig. 9 is a schematic diagram illustrating the sizes of the gas flow control portion, the 1 st hole and the 2 nd hole, and the positions with respect to the wafer.
Fig. 10 is a schematic view illustrating another example of an intermediate cup.
Fig. 11 is an explanatory diagram of the resist coating apparatus according to embodiment 1.
Fig. 12 is an explanatory diagram of another example of the resist coating apparatus according to embodiment 1.
Fig. 13 is an explanatory diagram of the resist coating apparatus according to embodiment 2.
Fig. 14 is an explanatory diagram of another example of the resist coating apparatus according to embodiment 2.
Fig. 15 is an explanatory diagram of the resist coating apparatus according to embodiment 3.
Fig. 16 is an explanatory diagram of a resist coating apparatus according to embodiment 4.
Fig. 17 is a view showing the results of observation of the state in which the droplets bounce from the intermediate cup onto the wafer when the resist coating apparatus of the present embodiment is used.
Fig. 18 is a diagram showing a result of simulation of air flow generated in the cup when the wafer is rotated by using the resist coating apparatus of the present embodiment.
Description of the reference numerals
1 method 8230a substrate processing system
32 method 8230and resist coating device
121-8230and rotary chuck
125\8230; cup body (cup)
130 \ 8230and outer cup body (outer cup)
140 \ 8230and inner cup (inner cup)
150 \ 8230and middle cup (middle cup)
151 8230and airflow control part
153 method 8230a support part
153a 8230and 1 st hole
153b, 8230and 2 nd hole.
Detailed Description
Hereinafter, embodiments of the present invention will be described. Fig. 1 is an explanatory view schematically showing a configuration of a substrate processing system 1 including a coating processing apparatus according to the present embodiment. Fig. 2 and 3 are a front view and a rear view schematically showing the internal configuration of each substrate processing system 1. In this embodiment, a case where the coating liquid is a resist liquid and the coating processing apparatus is a resist coating apparatus that coats the substrate with the resist liquid will be described as an example.
As shown in fig. 1, the substrate processing system 1 has a configuration in which a cassette station 10 that carries in and out a cassette C containing a plurality of wafers W, a processing station 11 including a plurality of various processing apparatuses that perform predetermined processing on the wafers W, and an interface station 13 that delivers and receives the wafers W between exposure apparatuses 12 adjacent to the processing station 11 are integrally connected.
The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 for mounting the cassettes C when the cassettes C are carried in and out from the outside of the substrate processing system 1.
As shown in fig. 1, the cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction. The wafer transfer device 23 is movable in the vertical direction and around the vertical axis (θ direction), and can transfer the wafers W between the cassettes C on the cassette mounting plates 21 and a transfer device of the 3 rd module G3 of the processing station 11, which will be described later.
A plurality of, for example, 4-th modules G1, G2, G3, and G4 having various devices are provided in the processing station 11. For example, the 1 st module G1 is provided on the front side (the negative X-direction side in fig. 1) of the processing station 11, and the 2 nd module G2 is provided on the back side (the positive X-direction side in fig. 1) of the processing station 11. Further, a 3 rd module G3 is provided on the cassette station 10 side (the negative Y-direction side in fig. 1) of the processing station 11, and a 4 th module G4 is provided on the interface station 13 side (the positive Y-direction side in fig. 1) of the processing station 11.
For example, as shown in fig. 2, the 1 st block G1 includes: a plurality of liquid processing apparatuses, for example, a developing apparatus 30 that performs a developing process on the wafer W; a lower anti-reflection film forming device 31 for forming an anti-reflection film (hereinafter referred to as "lower anti-reflection film") on the lower layer of the resist film of the wafer W; a resist coating device 32 for coating a resist solution on the wafer W to form a resist film; and an upper anti-reflection film forming apparatus 33 for forming an anti-reflection film (hereinafter referred to as "upper anti-reflection film") on the resist film of the wafer W.
For example, 3 developing apparatuses 30, 3 lower antireflection film forming apparatuses 31, 3 resist coating apparatuses 32, and 3 upper antireflection film forming apparatuses 33 are arranged in a horizontal direction. The number and arrangement of the developing apparatus 30, the lower anti-reflection film forming apparatus 31, the resist coating apparatus 32, and the upper anti-reflection film forming apparatus 33 can be arbitrarily selected.
In the developing apparatus 30, the lower anti-reflection film forming apparatus 31, the resist coating apparatus 32, and the upper anti-reflection film forming apparatus 33, for example, spin coating in which a predetermined coating liquid is coated on the wafer W is performed. In spin coating, for example, a coating liquid is discharged from a coating nozzle onto the wafer W, and the wafer W is spun to spread the coating liquid on the surface of the wafer W. The structure of the resist coating apparatus 32 will be described later.
For example, in the 2 nd module G2, as shown in fig. 3, there are arranged in the vertical direction and the horizontal direction: a heat treatment apparatus 40 for performing heat treatment such as heating or cooling of the wafer W, and a sticking apparatus 41 for improving the fixing property of the resist solution and the wafer W; and a peripheral exposure device 42 for exposing the outer peripheral portion of the wafer W. The number and arrangement of these heat treatment devices 40, the adhering devices 41, and the peripheral exposure devices 42 can be arbitrarily selected.
For example, in the 3 rd module G3, a plurality of passing devices 50, 51, 52, 53, 54, 55, 56 are provided in this order from the bottom. In the 4 th module G4, a plurality of passing devices 60, 61, and 62 are provided in this order from the bottom.
As shown in fig. 1, a wafer transfer area D is formed in an area surrounded by the 1 st to 4 th modules G1 to G4. In the wafer transfer area D, a plurality of wafer transfer devices 70 are arranged, and the wafer transfer devices 70 include transfer arms 70a that are movable in, for example, the Y direction, the X direction, the θ direction, and the vertical direction. The wafer transfer device 70 moves in the wafer transfer area D, and can transfer the wafer W to a predetermined device in the surrounding 1 st, 2 nd, 3 rd, and 4 th modules G1, G2, G3, and G4.
As shown in fig. 3, a shuttle (shuttle) 80 that linearly transports the wafer W between the 3 rd module G3 and the 4 th module G4 is provided in the wafer transport area D.
The shuttle 80 is linearly free to move, for example, in the Y direction of fig. 3. The shuttle 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the delivery unit 52 of the 3 rd module G3 and the delivery unit 62 of the 4 th module G4.
As shown in fig. 1, the wafer transfer apparatus 100 is provided adjacently on the X-direction positive direction side of the 3 rd module G3. The wafer transfer apparatus 100 includes, for example, a transfer arm 100a that is movable in the X direction, the θ direction, and the vertical direction. The wafer transfer apparatus 100 moves up and down while supporting the wafer W by the transfer arm 100a, and can transfer the wafer W to each transfer apparatus in the 3 rd module G3.
The interface station 13 is provided with a wafer transfer device 110 and a delivery device 111. The wafer transfer device 110 includes, for example, a transfer arm 110a that is movable in the Y direction, the θ direction, and the vertical direction. The wafer transfer apparatus 110 can transfer the wafer W between each delivery apparatus, the delivery apparatus 111, and the exposure apparatus 12 in the 4 th module G4 by supporting the wafer W on the transfer arm 110a, for example.
In the substrate processing system 1 described above, as shown in fig. 1, the control unit 200 is provided. The control unit 200 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the substrate processing system 1. The program storage unit also stores a program for controlling the operation of the drive systems of the various processing apparatuses, the transport apparatus, and the like described above to realize a coating process, which will be described later, in the substrate processing system 1. The program may be a program recorded in a computer-readable storage medium H such as a computer-readable Hard Disk (HD), a Flexible Disk (FD), a Compact Disc (CD), a magneto-optical disk (MO), or a memory card, and may be a program that can be installed from the storage medium to the control unit 200.
Next, the structure of the resist coating apparatus 32 will be described. Fig. 4 and 5 are a longitudinal sectional view and a cross-sectional view, respectively, showing the outline of the structure of the resist coating apparatus 32.
As shown in fig. 4 and 5, the resist coating apparatus 32 includes a process container 120 whose inside can be sealed. A wafer W loading/unloading port (not shown) is formed in a side surface of the processing container 120.
A spin chuck 121 as a substrate holder for holding and rotating the wafer W is provided in the processing vessel 120. The spin chuck 121 can be rotated at a predetermined speed by a chuck driving unit 122 such as a motor. The chuck driving unit 122 is provided with an elevating drive mechanism such as an air cylinder, for example, so that the spin chuck 121 can be freely elevated.
Further, a cup 125 that houses the spin chuck 121 and exhausts air from the bottom is provided in the processing container 120. The cup 125 includes: an outer cup 130 disposed outside the spin chuck 121; an inner cup 140 located on an inner peripheral side of the outer cup 130; and an intermediate cup 150 having an air flow control part 151 between the outer cup 130 and the inner cup 140. The outer cup 130 is used to catch and collect liquid scattered or dropped from the wafer W. In fig. 4, the outer cup 130 is shown as an integral body, but may be divided into upper and lower portions (see reference numerals 130a and 130b in fig. 8).
As shown in fig. 5, a guide rail 160 extending in the Y direction (the left-right direction in fig. 5) is formed on the X direction negative direction (the lower direction in fig. 5) side of the outer cup 130. The guide rail 160 is formed, for example, from the outside of the outer cup 130 on the negative Y-direction (left direction in fig. 5) side to the outside on the positive Y-direction (right direction in fig. 5) side. To the guide rail 160, 2 arms 161 and 162 are attached.
A resist liquid supply nozzle 164 serving as a coating liquid supply member for supplying a resist liquid serving as a coating liquid is supported by the 1 st arm 161. The 1 st arm 161 is movable on the guide rail 160 by a nozzle driving section 165 as a moving mechanism. Thus, the resist liquid supply nozzle 164 can be moved from the standby portion 166 provided on the outer side of the outer cup 130 in the positive Y-direction side to the standby portion 167 provided on the outer side of the outer cup 130 in the negative Y-direction side, through the upper side of the center portion of the wafer W in the outer cup 130. The nozzle driving unit 165 allows the 1 st arm 161 to be freely moved up and down, thereby adjusting the height of the resist liquid supply nozzle 164.
A solvent supply nozzle 168 for supplying a solvent for the resist solution is supported by the 2 nd arm 162. The 2 nd arm 162 is movable on the guide rail 160 by a nozzle driving unit 169 as a moving mechanism. Thus, the solvent supply nozzle 168 can be moved from the standby unit 170 provided on the outer side of the outer cup 130 in the positive Y-direction to above the center of the wafer W in the outer cup 130. The standby unit 170 is provided on the positive Y direction side of the standby unit 166. The nozzle driving unit 169 allows the 2 nd arm 162 to be lifted and lowered, thereby adjusting the height of the solvent supply nozzle 168.
An annular wall 131 is provided at the lower portion of the outer cup 130, and an annular wall 141 is provided at the lower portion of the inner cup 140. A gap d is formed between these wall bodies 131, 141, and this gap d forms a discharge path. A bent path is formed below the inner cup 140 by an annular horizontal member 142, cylindrical outer and inner peripheral vertical members 143 and 144, and an annular bottom member 145 positioned at the bottom. The bent passage constitutes a gas-liquid separation section.
A drain port 132 for discharging the collected liquid is formed in the bottom surface member 145 between the wall body 131 and the outer peripheral vertical member 143, and a drain pipe 133 is connected to the drain port 132.
On the other hand, an exhaust port 146 for exhausting the ambient gas around the wafer W is formed in the bottom member 145 between the outer vertical member 143 and the inner vertical member 144, and an exhaust pipe 147 is connected to the exhaust port 146.
An air flow control unit 151 formed to surround the outer periphery of the wafer W held by the spin chuck 121 is provided at the upper portion of the intermediate cup 150.
Next, an outline of the intermediate cup 150 will be described. Fig. 6 and 7 are perspective and top views, respectively, of intermediate cup 150, with only one half of intermediate cup 150 being shown in fig. 6.
As shown in fig. 6, a cylindrical peripheral wall 152 is provided on the outer peripheral portion of the intermediate cup 150. Further, a support portion 153 for supporting the airflow control portion 151 is provided in the intermediate cup 150. One end of the support 153 is connected to the inner peripheral surface of the peripheral wall 152 at a position closer to the bottom than the wafer W, specifically, at the center of the inner peripheral surface of the peripheral wall 152. Further, the outer peripheral end of the airflow control unit 151 located on the top side of the one end is connected to the other end of the support 153. The support portion 153 connects the inner peripheral surface of the peripheral wall 152 and the airflow control portion 151.
The support 153 has a plurality of 1 st holes 153a formed in an upper portion thereof, and a plurality of 2 nd holes 153b formed in a lower portion thereof.
As shown in fig. 7, the 1 st holes 153a are provided at predetermined intervals in the circumferential direction of the airflow control portion 151 so as to be located outside the airflow control portion 151 in plan view.
The plurality of 2 nd holes 153b are provided at predetermined intervals in the circumferential direction of the airflow control portion 151 so as to be located outside the 1 st hole 153a in plan view.
The 1 st hole 153a is formed larger than the 2 nd hole 153b. Specifically, the 1 st hole 153a is formed to have a length in the circumferential direction (longitudinal direction) larger than that of the 2 nd hole 153b, and as shown in fig. 8 described later, a length in a direction (short-side direction) perpendicular to the circumferential direction along the support portion 153 is also formed to be larger than that of the 2 nd hole 153b.
In addition, the 1 st holes 153a are formed such that the total area thereof is larger than the total area of the 2 nd holes 153b. Specifically, the 1 st hole 153a is formed such that the sum of the areas along the intermediate cup 150 is larger than the sum of the areas of the 2 nd holes 153b.
Fig. 8 isbase:Sub>A view for explainingbase:Sub>A specific example of the shape of the intermediate cup 150, particularly the shape of the airflow control portion 151, the peripheral wall 152, and the support portion 153, fig. 8 (base:Sub>A) isbase:Sub>A cross-sectional view taken along linebase:Sub>A-base:Sub>A of fig. 7, and fig. 8 (B) isbase:Sub>A cross-sectional view taken along line B-B of fig. 7.
As shown in the drawing, the airflow control portion 151 is formed such that the upper surface 151a thereof is a horizontal flat surface. The airflow control portion 151 is formed such that a tip 151c is thicker than a base 151b in cross section.
An annular projection 152a projecting in the radial direction of the peripheral wall 152 is provided on the outer periphery. The protrusion 152a is used to define the position of the intermediate cup 150 relative to the lower outer cup 130a and the position of the upper outer cup 130b relative to the intermediate cup 150.
The intermediate cup 150 is attached to the lower outer cup 130a by inserting the lower portion 152b of the peripheral wall 152 into the lower outer cup 130a. The lower portion 152b of the peripheral wall 152 functions as a guide when attached to the lower outer cup 130a.
The intermediate cup 150 is attached to the upper outer cup 130b such that the upper portion 152c of the peripheral wall 152 is inserted into the upper outer cup 130b. The upper portion 152c of the peripheral wall 152 functions as a guide when attached to the upper outer cup 130b.
The inner peripheral surface of the peripheral wall 152 forms the inner peripheral surface of the cup 125.
The 1 st hole 153a of the support 153 is formed outside and below the airflow control unit 151, and the 2 nd hole 153b is formed outside and below the airflow control unit 151 and the 1 st hole 153a.
The area of the 1 st arch portion 153c located between the 1 st holes 153a is preferably as small as possible within a range in which the strength of the intermediate cup 150 and the flatness of the upper surface 151a of the airflow control portion 151 can be ensured. The area of the 2 nd arch portion 153d located between the 2 nd holes 153b is also the same.
Fig. 9 is a schematic view illustrating the sizes and positions of the airflow control part 151 and the 1 st and 2 nd holes 153a and 153b with respect to the wafer W.
The width d1 in the radial direction of the flat surface of the upper surface 151a of the airflow control portion 151 is, for example, 10mm. The airflow control unit 151 is disposed with a small gap from the wafer W, specifically, a distance d2 in the horizontal direction from the front end 151c of the airflow control unit 151 to the outer peripheral end of the wafer W1 is, for example, 0.2mm. A height H1, which is a distance H1 in the vertical direction from the lower end surface of the tip 151c of the gas flow control portion 151 to the front surface W1 of the wafer W, is, for example, 2mm.
The 1 st hole 153a is formed so as to be perforated in a direction perpendicular to the rotation axis of the wafer W (Y direction in the drawing). In other words, the 1 st hole 153a is formed to have a larger area when viewed from the direction perpendicular to the rotation axis than when viewed from the rotation axis direction (Z direction in the drawing) of the wafer W.
The 1 st hole 153a is formed in the support portion 153 at a position opposite to the outer peripheral end of the front surface W1 of the wafer W. Specifically, the 1 st hole 153a is formed from a position higher than the front surface W1 of the wafer W to a position lower than the front surface W1 of the support portion 153. More specifically, the 1 st hole 153a is formed such that its upper end 153a1 is located 0.8mm to 4mm higher than the surface W1 of the wafer W and its lower end 153a2 is located 2mm to 5mm lower than the surface W1 of the wafer W.
The 2 nd hole 153b is formed to perforate in the rotation axis direction of the wafer W. In other words, the 2 nd holes 153b are formed so that the area when viewed from the direction perpendicular to the rotation axis is smaller than the area when viewed from the rotation axis direction of the wafer W, and in the example shown in the figure, the area when viewed from the direction perpendicular to the rotation axis is substantially zero. The 2 nd hole 153b has a radial width d3 of, for example, 5mm. The 2 nd hole 153b is located outside the 1 st hole 153a when viewed from the rotation axis direction of the wafer W. Specifically, the 2 nd holes 153b are formed such that a distance d4 from the outer side ends of the 1 st holes 153a to the outer circumferential end of the wafer W is greater than a distance d5 from the inner side ends of the 2 nd holes 153b to the outer circumferential end of the wafer W.
Next, a wafer process performed by using the substrate processing system 1 configured as described above will be described. First, a cassette C containing a plurality of wafers W is loaded into the cassette station 10 of the substrate processing system 1, and the wafers W in the cassette C are sequentially transferred to the delivery device 53 of the processing station 11 by the wafer transfer device 23.
Subsequently, the wafer W is transferred to the heat treatment apparatus 40 of the 2 nd module G2 to be subjected to the temperature adjustment process. Thereafter, the wafer W is transferred by the wafer transfer apparatus 70 to, for example, the lower anti-reflection film forming apparatus 31 of the 1 st block G1, and a lower anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the 2 nd module G2, and is subjected to heat treatment and temperature adjustment treatment.
Subsequently, the wafer W is conveyed to the adhering device 41 and subjected to an adhering process. Thereafter, the wafer W is conveyed to the resist coating apparatus 32 of the 1 st block G1, and a resist film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 and subjected to a pre-baking treatment. The pre-bake treatment is also the same as the heat treatment after the formation of the lower anti-reflection film, and the heat treatment after the formation of the anti-reflection film, the post-exposure bake treatment, and the post-bake treatment, which will be described later, are also the same. However, the heat treatment apparatuses 40 for the respective heat treatments are different from each other.
Subsequently, the wafer W is conveyed to the upper anti-reflection film forming apparatus 33, and an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40, heated, and temperature-adjusted. Thereafter, the wafer W is transported to the periphery exposure apparatus 42, and is subjected to periphery exposure processing.
Next, the wafer W is transported to the exposure apparatus 12, and is subjected to exposure processing in a predetermined pattern.
Subsequently, the wafer W is transferred to the heat treatment apparatus 40 and subjected to post-exposure baking treatment. Thereafter, the wafer W is transported to the development processing apparatus 30, for example, and is subjected to development processing. After the development process is completed, the wafer W is transferred to the heat treatment apparatus 40 and subjected to a post-baking process. Then, the cassette C of the cassette mounting plate 21 to which the wafer W is transferred is completed by a series of photolithography steps.
Here, the resist coating process in the resist coating apparatus 32 will be described in detail. In the resist coating process, the wafer W is first held by suction on the upper surface of the spin chuck 121.
Then, the solvent supply nozzle 168 is moved to above the center portion of the wafer W, and the solvent of the resist solution is discharged at the center portion of the wafer W. Subsequently, the wafer W is rotated at 2000rpm, for example, and the solvent on the wafer W is diffused over the entire surface of the wafer by spin coating, thereby performing a so-called pre-wetting treatment. After the solvent supply nozzle 168 is retracted, the resist solution supply nozzle 164 is moved to a position above the center of the wafer W, and the resist solution is supplied onto the wafer W from the resist solution supply nozzle 164 while rotating the wafer W at a low rotation speed (e.g., 300 rpm).
Then, the rotation speed of the wafer W is set to a high rotation speed (for example, 3000 rpm) at a point in time when the supply amount of the resist solution from the resist solution supply nozzle 164 reaches a predetermined amount. After that, at a point in time when the supply amount of the resist liquid reaches a predetermined amount, the supply of the resist liquid is stopped, and then the resist liquid supply nozzle 164 is retracted. Thereafter, the wafer W is rotated at a medium rotation speed (for example, 1500 rpm), and the resist solution supplied to the central portion of the wafer W is dried while being diffused over the entire surface of the wafer W, thereby adjusting the resist film to a predetermined film thickness.
In the related process, since the gas is exhausted from the bottom of the cup 125, a gas flow is generated along the surface W1 of the wafer W. When the generated gas flows in the downward direction along the outer peripheral end of the wafer W, the thickness of the resist film in the outer peripheral portion of the wafer W increases. In particular, in the step of drying the resist film by rotating the wafer W, the gas flow flowing in the downward direction along the outer peripheral edge of the wafer W becomes a problem. However, in the resist coating apparatus 32, since the gas flow control unit 151 is provided with a small gap from the wafer W as described above, the amount of the gas flow flowing in the downward direction along the outer peripheral end of the wafer W among the gas flows flowing along the front surface W1 of the wafer W can be suppressed. Therefore, the thickness of the resist film in the outer peripheral portion of the wafer W can be prevented from increasing.
In the resist coating process, the resist liquid is scattered from the wafer W in a step of diffusing the resist liquid while supplying the resist liquid. When the resist solution is rebounded by the intermediate cup 150, it may be scattered on the surface of the wafer W. However, in the resist coating apparatus 32, the 1 st hole 153a is provided at a position of the support portion 153 opposite to the outer peripheral end of the wafer W, that is, at a position where the resist liquid, which is expected to be returned when the resist liquid, which is scattered from the wafer W, hits, is scattered on the surface of the wafer W. Therefore, the resist liquid scattered from the wafer W in the step of diffusing the resist liquid can be prevented from being rebounded by the intermediate cup 150 and scattering on the surface W1 of the wafer W.
Further, when the upper end 153a1 of the 1 st hole 153a is located lower than the position 0.8mm higher than the surface W1 of the wafer W, the resist liquid scattered from the wafer W may collide with the support portion 153 and be scattered back onto the surface W1 of the wafer W. Further, when the upper end 153a1 of the 1 st hole 153a is located above the position 4mm higher than the front surface W1 of the wafer W, the distance from the front surface W1 of the wafer W to the gas flow control portion 151 inevitably increases, and the thickness of the resist film in the outer peripheral portion of the wafer W cannot be prevented from increasing.
When the lower end 153a2 of the 1 st hole 153a is located above the position 2mm lower than the surface W1 of the wafer W, the resist liquid scattered from the wafer W may collide with the support portion 153 and be scattered back onto the surface W1 of the wafer W. Further, when the lower end 153a2 of the 1 st hole 153a is located lower than the position lower by 5mm than the front surface W1 of the wafer W, the size of the intermediate cup 150 needs to be increased as a whole, and therefore the resist coating apparatus 32 becomes large and the cost increases.
Thus, as described above, the resist coating apparatus 32 is formed such that the upper end 153a1 of the 1 st hole 153a is located 0.8mm to 4mm higher than the surface W1 of the wafer W and the lower end 153a2 thereof is located 2mm to 5mm lower than the surface W1 of the wafer W.
Fig. 10 is a schematic view illustrating another example of the intermediate cup 150.
In the intermediate cup 150 of fig. 9, the portion of the intermediate cup 150 where the 2 nd hole 153b is formed in a shape gradually descending from the wafer W side toward the inner peripheral wall side of the cup 125. However, the formation portion of the 2 nd hole 153b is not limited to the example of fig. 9. For example, as shown in fig. 10, the 2 nd hole 153b may be formed in a shape having a constant height from the wafer W side toward the inner peripheral wall of the cup 125.
(1 st reference embodiment)
Fig. 11 is an explanatory view of the resist coating apparatus according to embodiment 1, showing a cross section of the cup.
In the resist coating apparatus 32 of fig. 4, an end portion of the support portion 153 that supports the gas flow control portion 151 on the opposite side from the gas flow control portion 151 is connected to the vicinity of the center of the inner peripheral surface of the outer cup 130. Then, by providing the 1 st hole 153a in the support portion 153 at a position opposite to the outer peripheral end of the wafer W, no structure is present near the wafer W and at a position substantially at the same height as the wafer W.
In contrast, in the resist coating apparatus according to embodiment 1 and reference to fig. 11, the end of the support portion 300 opposite to the gas flow control portion 151, which supports the gas flow control portion 151, is connected to the upper portion of the inner peripheral surface of the outer cup 130. With such a configuration, in the present reference embodiment, the structure is not present in the vicinity of the wafer W and at a position substantially at the same height as the wafer W, and the resist liquid scattered from the wafer W is prevented from being bounced back by the member supporting the gas flow control unit 151 and the like and scattered onto the surface W1 of the wafer W. In addition, a penetration portion 301 is provided on the support portion 300 to allow the airflow flowing on the upper surface of the airflow control portion 151 to flow to the outside.
Fig. 12 is an explanatory view of another example of the resist coating apparatus according to embodiment 1, showing a cross section of a cup.
In the example of fig. 11, the upper surface 151a of the airflow control unit 151 is horizontal and parallel to the surface of the wafer W, and the height of the base 151b is substantially the same as that of the tip 151 c.
However, when the rebound of the resist solution from the base 151b of the airflow control unit 151 is considered, the base 151b of the airflow control unit 151 may be higher than the tip 151c as shown in fig. 12.
(2 nd best mode for carrying out the invention)
Fig. 13 is an explanatory view of the resist coating apparatus according to embodiment 2, showing a cross section of the cup.
In the resist coating apparatus 32 of fig. 4, a support portion 153 that supports the gas flow control portion 151 is fixed to the outer cup 130. In contrast, in the resist coating apparatus according to embodiment 2 and 2, as shown in fig. 13, a support portion 400 that supports an airflow control portion 151 is formed in a rod shape extending in the vertical direction, and is fixed to a driving portion 420 that is provided outside an outer cup 410 and above the airflow control portion 151. Support portion 400 is provided with a through hole 411 that penetrates through outer cup 410 in the vertical direction, and is movable up and down by drive portion 420, so that the height of airflow control portion 151 can be adjusted.
In the resist coating process of the resist coating apparatus according to embodiment 2, after the pre-wetting process, the resist solution is supplied onto the wafer W while rotating the wafer W at a low rotation speed (for example, 300 rpm). At the time point when the pre-wetting process and the supply of the resist solution start, the airflow control unit 151 retreats upward.
When the supply amount of the resist solution reaches a predetermined amount, the rotation speed of the wafer W is set to a high rotation speed (for example, 3000 rpm). After that, at a point in time when the supply amount of the resist liquid reaches a predetermined amount, the supply of the resist liquid is stopped, and the gas flow controller 151 retracted upward is moved to the vicinity of the wafer W. Thereafter, the wafer W is rotated at a medium rotation speed (for example, 1500 rpm), and the resist solution supplied to the central portion of the wafer W is dried while being diffused over the entire surface of the wafer W, thereby adjusting the resist film to a predetermined film thickness.
In the resist coating apparatus according to the present reference embodiment, since the gas flow control unit 151 can be positioned in the vicinity of the wafer W in the drying step after the supply of the resist solution, the amount of the gas flow flowing in the downward direction along the outer peripheral end of the wafer W out of the gas flows flowing along the front surface W1 of the wafer W can be suppressed. Therefore, the thickness of the resist film in the outer peripheral portion of the wafer W can be prevented from increasing.
In the resist coating apparatus according to the present reference embodiment, in the step of diffusing the resist liquid while supplying the resist liquid, the gas flow control unit 151 and the support unit 400 supporting the gas flow control unit 151 can be retracted upward from the vicinity of the wafer W. Therefore, the resist liquid scattered from the wafer W in this step can be prevented from being splashed back by the gas flow control portion 310 or the support portion 400 and scattered on the surface W1 of the wafer W.
Fig. 14 is an explanatory view of another example of the resist coating apparatus according to embodiment 2, showing a cross section of the cup.
Unlike the resist coating apparatus of fig. 13, the resist coating apparatus of fig. 14 is configured such that a support portion 450 for supporting the airflow control portion 151 is formed in a rod shape extending in the horizontal direction and is fixed to a drive portion 470 provided outside the outer cup 460 and on the side of the airflow control portion 151. The support portion 450 is provided with a through hole 411 that penetrates the outer cup 460 in the horizontal direction, and is movable up and down by the driving portion 470, thereby adjusting the height of the airflow control portion 151.
In the resist coating apparatus of this example, the gas flow control unit 151 may be positioned near the wafer W or may be retracted from the vicinity of the wafer W. Therefore, as in fig. 13, it is possible to prevent the thickness of the resist film in the outer peripheral portion of the wafer W from increasing, and to prevent the resist liquid scattered from the wafer W from being bounced back by the gas flow control portion 151 or the support portion 450 and scattered onto the surface W1 of the wafer W in the step of diffusing the resist liquid while supplying the resist liquid.
(3 rd reference embodiment)
Fig. 15 is an explanatory view of the resist coating apparatus according to embodiment 3 with reference to, and shows a cross section of the cup.
As shown in fig. 15, in the resist coating apparatus according to embodiment 3, a support portion 500 for supporting the airflow control portion 151 is formed in a rod shape extending in the vertical direction, and is fixed to a driving portion 520 provided inside the inner cup 510 and below the airflow control portion 151. The support part 500 is provided as a through hole penetrating the inner cup 510 and the annular horizontal member 530 in the vertical direction, and is movable up and down by the driving part 520, whereby the height of the airflow control part 151 can be adjusted.
In the resist coating apparatus according to embodiment 3, the gas flow controller 151 is moved up and down and positioned in the vicinity of the wafer W, whereby the amount of gas flow flowing in the downward direction along the outer peripheral end of the wafer W, out of the gas flows flowing along the front surface W1 of the wafer W, can be suppressed. Therefore, the thickness of the resist film in the outer peripheral portion of the wafer W can be prevented from increasing.
In the resist coating apparatus according to the present reference embodiment, in the step of diffusing the resist liquid while supplying the resist liquid, the gas flow control unit 151 and the support unit 500 can be retracted downward from the vicinity of the wafer W by the drive unit 520. Therefore, the resist liquid scattered from the wafer W in this step can be prevented from being bounced back by the gas flow control portion 151 or the support portion 500 and scattered onto the surface W1 of the wafer W.
(4 th reference embodiment)
Fig. 16 is an explanatory view of the resist coating apparatus according to embodiment 4, showing a cross section of the cup.
In the resist coating apparatus according to embodiment 4, as shown in fig. 16, the outer cup 600 is divided vertically, and the upper outer cup 601 is movable relative to the lower outer cup 602. The upper outer cup 601 is freely lifted by the driving part 610. Further, a support 620 for supporting the airflow control unit 151 is fixed to the upper outer cup 601. Therefore, the height of the airflow control unit 151 can be adjusted by raising and lowering the upper outer cup 601 by the driving unit 610.
In addition, a penetration portion 621 is provided on the support portion 620 to allow the airflow flowing on the upper surface of the airflow control portion 151 to flow to the outside.
In the resist coating apparatus according to embodiment 4, the upper outer cup 601 is lowered and the airflow control unit 151 is located in the vicinity of the wafer W, so that the amount of the airflow flowing in the downward direction along the outer peripheral edge of the wafer W among the airflows flowing along the front surface W1 of the wafer W can be suppressed. Therefore, the thickness of the resist film in the outer peripheral portion of the wafer W can be prevented from increasing.
In the resist coating apparatus according to the present reference embodiment, in the step of diffusing the resist liquid while supplying the resist liquid, the gas flow control portion 151 and the support portion 620 can be retracted upward from the vicinity of the wafer W by raising the upper outer cup 601. Therefore, the resist liquid scattered from the wafer W in this step can be prevented from being splashed back by the gas flow control unit 151 or the support unit 620 and scattered on the surface W1 of the wafer W.
(examples)
In the resist coating apparatus 32 according to the embodiment of the present invention shown in fig. 4 and the like, when the resist solution is coated on the wafer W, the state of the droplets bouncing off from the intermediate cup 150 onto the wafer W is observed, and the result is shown in fig. 17. The presence or absence and the number of bounces of the droplets onto the wafer W were observed by an electron microscope.
The intermediate cup 150 used in the example was set such that the horizontal distance d2 from the front end 151c of the airflow control portion 151 to the outer peripheral end of the wafer W1 was 0.2mm, and the height H1 from the lower end surface of the front end 151c of the airflow control portion 151 to the surface W1 of the wafer W was 2mm.
In the comparative example, a resist solution was applied to a wafer by a resist application apparatus having a conventional intermediate cup. The conventional intermediate cup is not provided with the 1 st hole 153a as in the intermediate cup 150 used in the embodiment.
In the comparative examples and examples, the coating conditions such as the coating amount of the resist solution and the wafer spin time were common.
In the comparative example, no droplet bouncing was observed at a rotation speed of 2000rpm, but a large amount of droplet bouncing was observed at high rotation speeds of 3000rpm and 4000rpm, although variations were observed between wafers W. In particular, more than 20 droplet bounces were observed at 4000 rpm.
In contrast, in the comparative example, no droplet bouncing was observed not only at 2000rpm but also at high rotation speeds such as 3000rpm and 4000 rpm.
In addition, the resist coating treatment including the drying step was performed by the resist coating apparatus 32 of the example and the resist coating apparatus of the comparative example, and when the resist coating apparatus 32 of the example was used, the resist film on the outer peripheral portion of the wafer W did not become thick, as in the resist coating apparatus of the comparative example.
Fig. 18 is a diagram showing a result of simulation of the air flow generated in the cup when the wafer W is rotated by using the resist coating apparatus 32 according to the embodiment of the present invention shown in fig. 4 and the like. The direction of the arrows in the figure indicates the flow direction of the air flow, and the thickness of the arrows indicates the magnitude of the flow rate of the air flow.
Fig. 18 (a) shows the results of a simulation performed for comparison. In this simulation, the support 700 supporting the airflow control unit 151 is coupled to the center of the inner circumference of the outer cup 130, but the 1 st hole 153a is not formed in the support 700 and only the 2 nd hole 153b is formed.
Fig. 18 (B) shows the result of simulation performed for a configuration that simulates the configuration of the resist coating apparatus 32 according to the embodiment of the present invention, that is, a configuration in which no structural body is present between the gas flow control portion 151 and the inner circumferential center of the outer cup 130.
In the two simulations showing the results in FIG. 18A and FIG. 18B, the size of the wafer W was set to 300mm, the rotation speed of the wafer W was set to 1000rpm, and the exhaust gas amount was set to 1.4m 3 The distance H1 in the vertical direction from the lower end surface of the tip 151c of the airflow control unit 151 to the front surface W1 of the wafer W is 2.8 mm/min. In both simulations, the time average of the flow rate of the gas flowing on the upper side of the gas flow controller 151 and the time average of the flow rate of the gas flowing on the lower side at the tip of the gas flow controller 151 were calculated.
As shown in fig. 18 (a), when there is a structure between the inner circumferential center of the outer cup 130 and the airflow control portion 151, that is, when the 1 st hole 153a is not provided, the airflow F11 flowing below the airflow control portion 151 is directed obliquely downward.
On the other hand, as shown in fig. 18 (B), when there is no structure between the inner circumferential center of the outer cup 130 and the airflow control portion 151, that is, when the 1 st hole 153a is provided, the direction of the airflow F1 flowing below the airflow control portion 151 is horizontal.
That is, by providing the 1 st hole 153a in the support 153 as in the resist coating apparatus 32 of fig. 4 or the like, the amount of the gas flow flowing downward along the outer peripheral edge of the wafer W can be reduced. Therefore, according to the resist coating device 32, the thickness of the resist film in the outer peripheral portion of the wafer W can be more reliably prevented from increasing.
Further, according to the simulation, as shown in fig. 18 (a), when there is a structure between the inner peripheral center of the outer cup 130 and the airflow control portion 151, the flow rate of the airflow F11 flowing below the airflow control portion 151 is 0.74m 3 Flow rate of the gas flow F12 flowing at the upper side was 0.65 m/min 3 In terms of a/minute.
On the other hand, as shown in fig. 18 (B), between the inner circumferential center of the outer cup 130 and the airflow control part 151In the case where no structure is present, the flow rate of the air flow F1 flowing below the air flow control portion 151 is 0.85m 3 Flow rate of the gas flow F2 flowing at the upper side was 0.54 m/min 3 In terms of a/minute.
That is, by eliminating a structure between the inner circumferential center of the outer cup 130 and the airflow control portion 151, that is, by providing the 1 st hole 153a in the support portion 153 as in the resist coating apparatus 32 such as fig. 4, the ratio of the airflow F2 flowing upward can be increased between the airflow F1 flowing downward and the airflow F2 flowing upward of the airflow control portion 151. Therefore, according to the resist coating apparatus 32, the thickness of the resist film in the outer peripheral portion of the wafer W can be more reliably prevented from increasing.
Although the preferred embodiments of the present invention have been described above with reference to the drawings, the present invention is not limited to these examples. It is obvious to those skilled in the art that various modifications and alterations can be made within the scope of the idea described in the claims, and it is needless to say that the modifications and alterations also fall within the technical scope of the present invention. The present invention is not limited to this example and can be variously employed. The present invention is applicable to substrates other than wafers, such as FPDs (flat panel displays) and mask plates for masks for photomasks.
Industrial applicability of the invention
The present invention is useful for a coating treatment apparatus for coating a substrate with a coating liquid.
Claims (4)
1. A coating treatment apparatus that coats a substrate with a coating liquid, comprising:
a substrate holding unit for holding and rotating a substrate;
a coating liquid supply member for applying a coating liquid to the substrate held by the substrate holding portion; and
a cup for accommodating the substrate holding part and exhausting air from the bottom,
this cup includes:
an airflow control unit located at the top side of the substrate held by the substrate holding unit and surrounding the outer periphery of the substrate;
a support portion supporting the airflow control portion; and
a peripheral wall provided on an outer peripheral portion of the cup body,
one end of the support portion is connected to the inner peripheral surface of the peripheral wall, and the other end is connected to the airflow control portion located on the top side of the one end,
the support part is provided with a1 st hole having a shape penetrating in a direction perpendicular to the rotation axis of the substrate, a2 nd hole having a shape penetrating in the rotation axis direction of the substrate is provided at a position lower than the 1 st hole,
the 1 st hole is formed in a position of the support portion opposite to an outer peripheral end of the substrate held by the substrate holding portion.
2. The coating treatment apparatus according to claim 1, wherein:
the total area of the 1 st aperture is greater than the total area of the 2 nd aperture.
3. The coating treatment apparatus according to claim 1 or 2, wherein:
the position opposite to the peripheral edge of the substrate held by the substrate holding part is a part from 0.8mm to 4mm above the surface of the substrate to 2mm to 5mm below the surface of the substrate.
4. A cup body which is formed in a bottomed cylindrical shape having an open top, is evacuated from a bottom, and can house a substrate holding portion for holding a substrate and rotating the substrate, the cup body comprising:
an annular air flow control section centered on a predetermined axis;
a support portion supporting the airflow control portion; and
a peripheral wall provided on an outer peripheral portion of the cup body,
one end of the support part is connected with the inner circumferential surface of the cup body, the other end of the support part, which is positioned at the top side of the one end, is connected with the airflow control part, and,
a1 st hole having a shape penetrating in a direction perpendicular to the predetermined axis is formed in the support portion, a2 nd hole having a shape penetrating in the direction of the predetermined axis is formed in a position outside the 1 st hole,
the 1 st hole is formed in a position of the support portion opposite to an outer peripheral end of the substrate held by the substrate holding portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| JP2017049826A JP6789155B2 (en) | 2017-03-15 | 2017-03-15 | Coating processing equipment and cup |
| JP2017-049826 | 2017-03-15 |
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| CN108630529A CN108630529A (en) | 2018-10-09 |
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| Publication number | Publication date |
|---|---|
| CN108630529A (en) | 2018-10-09 |
| JP6789155B2 (en) | 2020-11-25 |
| KR102394671B1 (en) | 2022-05-09 |
| JP2018156962A (en) | 2018-10-04 |
| KR20180105570A (en) | 2018-09-28 |
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