CN115472721A - 发光二极管外延结构及发光二极管 - Google Patents
发光二极管外延结构及发光二极管 Download PDFInfo
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- CN115472721A CN115472721A CN202211302665.9A CN202211302665A CN115472721A CN 115472721 A CN115472721 A CN 115472721A CN 202211302665 A CN202211302665 A CN 202211302665A CN 115472721 A CN115472721 A CN 115472721A
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- 239000012535 impurity Substances 0.000 claims abstract description 113
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 37
- 229910052799 carbon Inorganic materials 0.000 claims description 37
- 230000004888 barrier function Effects 0.000 claims description 29
- 238000003780 insertion Methods 0.000 claims description 27
- 230000037431 insertion Effects 0.000 claims description 27
- 238000000407 epitaxy Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 287
- 230000000903 blocking effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (13)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202311394361.4A CN117317086B (zh) | 2022-10-24 | 2022-10-24 | 发光二极管 |
CN202211302665.9A CN115472721B (zh) | 2022-10-24 | 2022-10-24 | 发光二极管外延结构及发光二极管 |
Applications Claiming Priority (1)
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CN202211302665.9A CN115472721B (zh) | 2022-10-24 | 2022-10-24 | 发光二极管外延结构及发光二极管 |
Related Child Applications (1)
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CN202311394361.4A Division CN117317086B (zh) | 2022-10-24 | 2022-10-24 | 发光二极管 |
Publications (2)
Publication Number | Publication Date |
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CN115472721A true CN115472721A (zh) | 2022-12-13 |
CN115472721B CN115472721B (zh) | 2023-09-15 |
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CN202211302665.9A Active CN115472721B (zh) | 2022-10-24 | 2022-10-24 | 发光二极管外延结构及发光二极管 |
CN202311394361.4A Active CN117317086B (zh) | 2022-10-24 | 2022-10-24 | 发光二极管 |
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CN202311394361.4A Active CN117317086B (zh) | 2022-10-24 | 2022-10-24 | 发光二极管 |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103296165A (zh) * | 2013-06-19 | 2013-09-11 | 中国科学院半导体研究所 | 一种可调控能带的led量子阱结构 |
CN103943746A (zh) * | 2014-03-24 | 2014-07-23 | 华灿光电(苏州)有限公司 | 一种GaN基发光二极管外延片及其制作方法 |
CN104300064A (zh) * | 2014-10-10 | 2015-01-21 | 华灿光电(苏州)有限公司 | 一种GaN基发光二极管的外延片及其制备方法 |
US9312434B1 (en) * | 2014-12-12 | 2016-04-12 | Tianjin Sanan Optoelectronics Co., Ltd. | Light-emitting diode fabrication method |
CN105489726A (zh) * | 2015-11-24 | 2016-04-13 | 厦门市三安光电科技有限公司 | 发光二极管及其制作方法 |
CN105845792A (zh) * | 2016-06-07 | 2016-08-10 | 合肥彩虹蓝光科技有限公司 | 一种高亮度青光led外延结构及生长工艺 |
CN105990479A (zh) * | 2015-02-11 | 2016-10-05 | 晶能光电(常州)有限公司 | 一种氮化镓基发光二极管外延结构及其制备方法 |
CN114497301A (zh) * | 2022-01-25 | 2022-05-13 | 厦门三安光电有限公司 | 一种微发光二极管 |
CN114512580A (zh) * | 2021-12-22 | 2022-05-17 | 淮安澳洋顺昌光电技术有限公司 | 一种发光二极管 |
CN114843384A (zh) * | 2022-04-18 | 2022-08-02 | 厦门士兰明镓化合物半导体有限公司 | 一种发光二极管的外延结构及其制备方法 |
CN115132892A (zh) * | 2021-12-30 | 2022-09-30 | 淮安澳洋顺昌光电技术有限公司 | 一种发光二极管外延结构及发光二极管 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8692286B2 (en) * | 2007-12-14 | 2014-04-08 | Philips Lumileds Lighing Company LLC | Light emitting device with bonded interface |
US9397253B2 (en) * | 2012-01-09 | 2016-07-19 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light emitting diode and manufacturing method therefor |
CN103066174A (zh) * | 2013-01-10 | 2013-04-24 | 合肥彩虹蓝光科技有限公司 | 一种提高GaN基LED发光效率的外延结构及生长方法 |
CN104821356B (zh) * | 2015-04-24 | 2017-06-20 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制造方法 |
CN108666398A (zh) * | 2017-03-28 | 2018-10-16 | 山东浪潮华光光电子股份有限公司 | 一种led外延结构及其生长方法 |
CN109216519B (zh) * | 2018-07-27 | 2020-03-27 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制造方法 |
CN113451455B (zh) * | 2020-11-26 | 2022-05-03 | 重庆康佳光电技术研究院有限公司 | Led外延的制备方法及led外延结构与led芯片 |
-
2022
- 2022-10-24 CN CN202211302665.9A patent/CN115472721B/zh active Active
- 2022-10-24 CN CN202311394361.4A patent/CN117317086B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103296165A (zh) * | 2013-06-19 | 2013-09-11 | 中国科学院半导体研究所 | 一种可调控能带的led量子阱结构 |
CN103943746A (zh) * | 2014-03-24 | 2014-07-23 | 华灿光电(苏州)有限公司 | 一种GaN基发光二极管外延片及其制作方法 |
CN104300064A (zh) * | 2014-10-10 | 2015-01-21 | 华灿光电(苏州)有限公司 | 一种GaN基发光二极管的外延片及其制备方法 |
US9312434B1 (en) * | 2014-12-12 | 2016-04-12 | Tianjin Sanan Optoelectronics Co., Ltd. | Light-emitting diode fabrication method |
CN105990479A (zh) * | 2015-02-11 | 2016-10-05 | 晶能光电(常州)有限公司 | 一种氮化镓基发光二极管外延结构及其制备方法 |
CN105489726A (zh) * | 2015-11-24 | 2016-04-13 | 厦门市三安光电科技有限公司 | 发光二极管及其制作方法 |
CN105845792A (zh) * | 2016-06-07 | 2016-08-10 | 合肥彩虹蓝光科技有限公司 | 一种高亮度青光led外延结构及生长工艺 |
CN114512580A (zh) * | 2021-12-22 | 2022-05-17 | 淮安澳洋顺昌光电技术有限公司 | 一种发光二极管 |
CN115132892A (zh) * | 2021-12-30 | 2022-09-30 | 淮安澳洋顺昌光电技术有限公司 | 一种发光二极管外延结构及发光二极管 |
CN114497301A (zh) * | 2022-01-25 | 2022-05-13 | 厦门三安光电有限公司 | 一种微发光二极管 |
CN114843384A (zh) * | 2022-04-18 | 2022-08-02 | 厦门士兰明镓化合物半导体有限公司 | 一种发光二极管的外延结构及其制备方法 |
Also Published As
Publication number | Publication date |
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CN115472721B (zh) | 2023-09-15 |
CN117317086A (zh) | 2023-12-29 |
CN117317086B (zh) | 2024-05-24 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
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Denomination of invention: Epitaxial Structure of Light Emitting Diodes and Light Emitting Diodes Effective date of registration: 20231222 Granted publication date: 20230915 Pledgee: Bank of Nanjing Co.,Ltd. Huai'an branch Pledgor: HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2023980073354 |
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Granted publication date: 20230915 Pledgee: Bank of Nanjing Co.,Ltd. Huai'an branch Pledgor: HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2023980073354 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Epitaxial Structure of Light Emitting Diodes and Light Emitting Diodes Granted publication date: 20230915 Pledgee: Bank of Nanjing Co.,Ltd. Huai'an branch Pledgor: HUAIAN AUCKSUN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: Y2024980022811 |