CN115433925A - Low-energy perovskite epitaxial growth process and deposition equipment for same - Google Patents
Low-energy perovskite epitaxial growth process and deposition equipment for same Download PDFInfo
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- CN115433925A CN115433925A CN202211234881.4A CN202211234881A CN115433925A CN 115433925 A CN115433925 A CN 115433925A CN 202211234881 A CN202211234881 A CN 202211234881A CN 115433925 A CN115433925 A CN 115433925A
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- 230000008021 deposition Effects 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 44
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 238000001914 filtration Methods 0.000 claims description 4
- 230000001502 supplementing effect Effects 0.000 claims description 4
- 238000005086 pumping Methods 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 9
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 239000013589 supplement Substances 0.000 description 11
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- 239000010813 municipal solid waste Substances 0.000 description 6
- 238000007599 discharging Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000005284 excitation Effects 0.000 description 4
- 239000007888 film coating Substances 0.000 description 4
- 238000009501 film coating Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052990 silicon hydride Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 208000014674 injury Diseases 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 210000003437 trachea Anatomy 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application relates to a low-energy-consumption perovskite epitaxial growth process, which comprises the following steps: s1: cutting the lining, namely cutting the lining with the required size according to the required size; s2: cleaning the gasket, and cleaning the cut gasket; s3: the pressure intensity is adjusted, the gasket is placed in the deposition equipment after penetrating through the machine body, and the deposition equipment is sealed to adjust the air pressure of the deposition equipment; s4: depositing and coating, namely depositing and coating the substrate through deposition equipment; s5: and taking out the gasket, and taking out the gasket after the plating is finished. The present application has the effect of reducing the probability of damage occurring to the lining.
Description
Technical Field
The present application relates to the field of solar cells, and more particularly, to a low energy perovskite epitaxial growth process and deposition equipment for the process.
Background
The radio frequency plasma enhanced chemical vapor deposition method is a method for preparing a microcrystalline silicon film at low temperature, but the growth rate is slow, the production efficiency is low, large-scale production is difficult to form, and the popularization and the application are limited.
In order to increase the growth rate, the existing radio frequency plasma enhanced chemical vapor deposition equipment generally adopts the excitation power of increasing the radio frequency glow discharge, which can cause the bombardment of high-energy ions on the growth surface of the thin film although the growth rate is increased, thereby easily causing the damage of the liner.
Disclosure of Invention
In order to reduce the probability of damage to the liner, the present application provides a low energy perovskite epitaxial growth process.
The low-energy perovskite epitaxial growth process provided by the application adopts the following technical scheme:
a low-energy perovskite epitaxial growth process comprises the following steps:
s1: cutting the lining, namely cutting the lining with the required size according to the required size;
s2: cleaning the gasket, and cleaning the cut gasket;
s3: the pressure intensity is adjusted, the gasket is placed in the deposition equipment after penetrating through the machine body, and the deposition equipment is sealed to adjust the air pressure of the deposition equipment;
s4: depositing and coating, namely depositing and coating the substrate through deposition equipment;
s5: and taking out the gasket, and taking out the gasket after the plating is finished.
Through adopting above-mentioned technical scheme, through pressurizeing in the organism, when increaseing radio frequency glow discharge's excitation power, can accelerate the decomposition rate of the SiH4 in plasma region, increase the density of atomic hydrogen simultaneously, reduce electron temperature in the plasma to reduce the bombardment energy of ion to the film growth surface, when promoting coating film efficiency, reduce the probability that the damage appears in the facing.
Optionally, the pressure in the deposition apparatus may be leveled prior to starting the deposition apparatus.
Through adopting above-mentioned technical scheme, carry out the leveling to atmospheric pressure before opening the deposition equipment, can reduce the probability that inside and outside atmospheric pressure difference produced the impact to reduce and strike the probability that causes the injury to operating personnel.
The utility model provides a deposition apparatus for low energy consumption perovskite epitaxial growth technology, includes the organism, the process chamber has been seted up on the organism, install the intake pipe on the organism, intake-tube connection and intercommunication process chamber, install the exhaust tube on the organism, the exhaust tube is connected and is linked together the process chamber, and the exhaust tube is kept away from organism one side and is connected air exhaust equipment.
Through adopting above-mentioned technical scheme, air exhaust equipment cooperation exhaust tube is bled to the processing chamber to the realization is to the pressurization of processing intracavity.
Optionally, install mass flow meter in the intake pipe, be provided with the needle valve between mass flow meter and the organism, the needle valve is installed in the intake pipe.
By adopting the technical scheme, the mass flow meter can control the quantity of the silicon tetrahydride and the hydrogen entering the processing cavity by matching with the needle valve.
Optionally, a vacuum gauge is mounted on the machine body and inserted into the processing cavity.
By adopting the technical scheme, the vacuum gauge pipe can detect the pressure intensity in the processing cavity, so that the pressure intensity in the processing cavity can be conveniently controlled.
Optionally, an air supply pipe is installed on the machine body and connected with and communicated with the processing cavity.
Through adopting above-mentioned technical scheme, the setting of air supplement pipe can be when bleeding too much, supply the processing intracavity to conveniently adjust the atmospheric pressure of processing intracavity.
Optionally, a cavity is formed in the inner wall of the processing cavity, a plurality of vent holes are uniformly formed in the circumferential direction of the processing cavity, the vent holes are communicated with the cavity and the processing cavity, the exhaust tube and the air supply tube are communicated with the cavity, and the processing cavity is communicated with the vent holes through the cavity.
Through adopting above-mentioned technical scheme, the air vent that can cooperate evenly to set up of cavity makes to bleed and the tonifying qi can be more even.
Optionally, the air supply pipe is provided with a filter element.
Through adopting above-mentioned technical scheme, when filtering the setting that can reduce the tonifying qi, debris get into the probability in processing chamber through the benefit trachea.
Optionally, be provided with collection device on the exhaust tube, collection device includes filter screen, row's miscellaneous mouthful and receiver, the filter screen sets up in the exhaust tube, and the filter screen covers whole exhaust tube, arrange miscellaneous mouthful and offer at filter screen towards organism direction one end, the receiver is installed on arranging miscellaneous mouthful.
Through adopting above-mentioned technical scheme, the exhaust debris of exhaust tube can be filtered in collection device's setting to collect through the receiver, reduce the probability that debris got into air extraction equipment, thereby reduce the impaired probability of air extraction equipment.
Optionally, a check valve is arranged between the collecting device and the machine body, and the check valve limits the gas pumping pipe to deliver gas to the machine body.
Through adopting above-mentioned technical scheme, the probability that debris can flow back to the organism from the exhaust tube now in setting up of check valve to the influence of debris backward flow to the organism has been reduced.
In summary, the present application includes at least one of the following beneficial technical effects:
1. by pressurizing the inside of the machine body, when the excitation power of radio frequency glow discharge is increased, the decomposition speed of SiH4 in a plasma area can be increased, the density of atomic hydrogen is increased, and the electron temperature in the plasma is reduced, so that the bombardment energy of ions on the growth surface of the thin film is reduced, the film coating efficiency is improved, and the probability of damage to a gasket is reduced;
2. the air pressure is leveled before the deposition equipment is started, so that the probability of impact caused by the difference between the internal air pressure and the external air pressure can be reduced, and the probability of injury to operators caused by the impact is reduced;
3. the air extraction equipment is matched with the air extraction pipe to extract air from the processing cavity, so that pressurization in the processing cavity is realized;
4. the vacuum gauge pipe can detect the pressure intensity in the processing cavity, so that the pressure intensity in the processing cavity can be conveniently controlled;
5. the arrangement of the cavity can be matched with the vent holes which are uniformly arranged, so that air extraction and air supplement can be more uniform;
6. the arrangement of the filtering piece can reduce the probability that sundries enter the processing cavity through the air supplementing pipe when air is supplemented;
7. the setting of collection device can filter exhaust debris of exhaust tube to collect through the receiver, reduce the probability that debris got into air-extracting equipment, thereby reduce the impaired probability of air-extracting equipment.
Drawings
Fig. 1 is a sectional view of the entire structure of the present embodiment.
Fig. 2 is a sectional view showing the structure of the air supplement pipe according to the present embodiment.
FIG. 3 is a sectional view showing the structure of the exhaust tube of the present embodiment.
Description of the reference numerals: 1. a body; 2. a processing cavity; 3. heating the platform; 5. an air inlet pipe; 6. a transmitter; 7. an exhaust pipe; 8. an air extraction device; 9. a mass flow meter; 10. a needle valve; 11. a vacuum gauge tube; 12. air supplying pipe; 13. a filter member; 131. a box body; 132. a filter screen; 14. a cavity; 15. a vent hole; 16. a collection device; 161. filtering with a screen; 162. a trash discharge port; 163. a storage box; 17. a clamping mechanism; 171. a clamping block; 172. inserting a block; 173. inserting the groove; 18. a spring; 19. a one-way valve.
Detailed Description
The present application is described in further detail below with reference to figures 1-3.
The embodiment of the application discloses a low-energy-consumption perovskite epitaxial growth process, which comprises the following steps:
s1: cutting the lining, namely cutting the lining with the required size according to the required size; s2: cleaning the gasket, cleaning the cut gasket by using clean water, and drying the gasket after cleaning; s3: the method comprises the steps of pressure intensity adjustment, wherein a gasket penetrates through a machine body and is placed in deposition equipment, the deposition equipment is sealed to adjust the air pressure, the machine body 1 is pressurized, the decomposition speed of silicon hydride in a plasma region can be accelerated when the excitation power of radio frequency glow discharge is increased, the density of atomic hydrogen is increased, and the electron temperature in plasma is reduced, so that the bombardment energy of ions on the growth surface of a thin film is reduced, the film coating efficiency is improved, and the damage probability of the gasket is reduced at the same time; s4: depositing and coating, namely depositing and coating the substrate through deposition equipment; s5: and taking out the gasket, leveling the air pressure in the deposition equipment after the film coating is finished, leveling the air pressure, and reducing the probability of impact caused by the difference between the internal air pressure and the external air pressure so as to reduce the probability of injury of the operator caused by the impact, and opening the deposition equipment to take out the gasket after the film coating is finished.
The utility model provides a deposition apparatus for low energy consumption perovskite epitaxial growth technology, refer to fig. 1, including organism 1, processing chamber 2 has been seted up on organism 1, heating platform 3 is installed to 2 bottoms in processing chamber, heating platform 3 is used for placing the facing and plates the facing when establishing at the deposit, install intake pipe 5 on the organism 1, 1 top of organism is provided with transmitter 6, intake pipe 5 connects and communicates transmitter 6 in the processing chamber 2, transmitter 6 is connected the radio frequency source and is carried out the deposit towards heating platform 3 and plate and establish, intake pipe 5 is kept away from 1 one end of organism and is connected the silicon hydride air supply, install exhaust tube 7 on the organism 1, exhaust tube 7 is connected and is communicated processing chamber 2, exhaust tube 7 is kept away from 1 one side of organism and is connected air exhaust apparatus 8, air exhaust apparatus 8 chooses the aspiration pump for use, air exhaust apparatus 8 cooperates exhaust tube 7 to bleed processing chamber 2, thereby realize the pressurization in the processing chamber 2.
Referring to fig. 1, a mass flow meter 9 is installed on the air inlet pipe 5, a needle valve 10 is arranged between the mass flow meter 9 and the machine body 1, the needle valve 10 is installed on the air inlet pipe 5, and the mass flow meter 9 can read the mass of the silicon tetrahydride entering the processing cavity 2 and accurately control the mass of the silicon tetrahydride entering the processing cavity 2 through the needle valve 10.
Referring to fig. 1 and 2, a vacuum gauge 11 is mounted on a machine body 1, the vacuum gauge 11 is inserted into a processing cavity 2, and the vacuum gauge 11 can detect the pressure in the processing cavity 2, so that the pressure in the processing cavity 2 can be conveniently controlled; an air supply pipe 12 is arranged on the machine body 1, the air supply pipe 12 is connected and communicated with the processing cavity 2, and the air supply pipe 12 can supply air to the processing cavity 2 when excessive air is exhausted, so that the air pressure in the processing cavity 2 can be conveniently adjusted; install on the air supplement pipe 12 and filter piece 13, filter piece 13 and include box body 131, box body 131 is inserted and is located in air supplement pipe 12, box body 131 thickness direction both ends can be dismantled and be provided with filter screen 132, when box body 131 inserts in the air supplement pipe 12, filter screen 132 covers air supplement pipe 12 internal diameter, place filter activated carbon in the box body 131, when filter piece 13's setting can reduce the tonifying qi, debris pass through the probability that air supplement pipe 12 got into processing chamber 2, filter piece 13 can dismantle and conveniently filter piece 13's change.
Referring to fig. 1, a cavity 14 is formed in the inner wall of a processing cavity 2, a plurality of vent holes 15 are uniformly formed in the circumferential direction of the processing cavity 2, the vent holes 15 are communicated with the cavity 14 and the processing cavity 2, an exhaust tube 7 and an air supply tube 12 are both communicated with the cavity 14, and the processing cavity 2 is communicated with the vent holes 15 through the cavity 14, a traditional air exhaust or air supply mode is carried out at one point, air exhaust or air supply to the whole cavity is not uniform enough, and therefore the air exhaust or air supply effect is poor; the cavity 14 can be matched with the vent holes 15 which are uniformly arranged, so that air exhaust and air supplement can be more uniform.
Referring to fig. 1 and 3, a collecting device 16 is disposed on the exhaust pipe 7, the collecting device 16 includes a filter screen 161 disposed in the exhaust pipe 7, a trash discharging port 162 disposed at one end of the filter screen 161 facing the machine body 1, and a storage box 163 mounted on the trash discharging port 162, the filter screen 161 covers the entire exhaust pipe 7, a clamping mechanism 17 is disposed between the storage box 163 and the trash discharging port 162, the clamping mechanism 17 includes a clamping block 171 rotatably disposed on the trash discharging port 162, one end of the clamping block 171 near the length direction is hinged to the trash discharging port 162, one end of the clamping block 171 far from the hinge is provided with an insertion block 172, an insertion slot 173 is disposed on the storage box 163, the insertion block 172 is adapted to the insertion slot 173, one end of the clamping block 171 near the hinge is provided with a spring 18, the spring 18 drives the clamping block 171 to rotate, so that the insertion block 172 is inserted into the insertion slot 173, and the clamping block 171 is pressed to separate the insertion block 172 from the insertion slot 173; a one-way valve 19 is arranged between the collecting device 16 and the machine body 1, the one-way valve 19 limits the air delivery of the air suction pipe 7 towards the machine body 1, and the arrangement of the one-way valve 19 can reduce the probability that the sundries flow back into the machine body 1 from the air suction pipe 7, so that the influence of sundries flow back on the machine body 1 is reduced.
The implementation principle of the embodiment of the application is as follows: the lining after cutting and cleaning penetrates through the machine body 1, the lining is placed on the heating platform 3 in the processing cavity 2, then the air pressure in the processing cavity 2 is adjusted through air suction and air supplement, the lining is heated after the air pressure is adjusted, meanwhile, silicon hydride is introduced into the cavity 14, the silicon hydride is electrolyzed, silicon is deposited and plated on the lining, after the deposition and plating are completed, the air supplement pipe 12 is used for supplementing air to the processing cavity 2, so that the air pressure in the processing cavity 2 is the same as the air pressure in the equipment placing area, and then the leveling of the pressure of the machine body 1 and the placing area is completed.
The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.
Claims (10)
1. A low-energy perovskite epitaxial growth process comprises the following steps:
s1: cutting the lining, namely cutting the lining with the required size according to the required size;
s2: cleaning the gasket, and cleaning the cut gasket;
s3: adjusting the pressure, namely penetrating the gasket through the machine body, placing the gasket into the deposition equipment, and sealing the deposition equipment to adjust the air pressure of the deposition equipment;
s4: depositing and coating, namely depositing and coating the substrate through deposition equipment;
s5: and taking out the gasket, and taking out the gasket after the plating is finished.
2. The low energy perovskite epitaxial growth process of claim 1, characterized in that: before starting the deposition equipment, the air pressure in the deposition equipment needs to be leveled.
3. A deposition apparatus for use in the low energy perovskite epitaxial growth process of claim 2, characterized in that: including organism (1), processing chamber (2) have been seted up on organism (1), install intake pipe (5) on organism (1), intake pipe (5) are connected and are linked together processing chamber (2), install exhaust tube (7) on organism (1), exhaust tube (7) are connected and are linked together processing chamber (2), and exhaust tube (7) are kept away from organism (1) one side and are connected air exhaust equipment (8).
4. A deposition apparatus for a low energy perovskite epitaxial growth process as claimed in claim 3, characterized in that: install mass flow meter (9) on intake pipe (5), be provided with needle valve (10) between mass flow meter (9) and organism (1), needle valve (10) are installed on intake pipe (5).
5. A deposition apparatus for use in a low energy perovskite epitaxial growth process as claimed in claim 4, wherein: a vacuum gauge pipe (11) is installed on the machine body (1), and the vacuum gauge pipe (11) is inserted into the machining cavity (2).
6. A deposition apparatus for use in a low energy perovskite epitaxial growth process as claimed in claim 5, characterized in that: an air supplementing pipe (12) is installed on the machine body (1), and the air supplementing pipe (12) is connected with and communicated with the processing cavity (2).
7. The deposition apparatus for low energy perovskite epitaxial growth process according to claim 6, characterized in that: the processing cavity (2) is characterized in that a cavity (14) is formed in the inner wall of the processing cavity (2), a plurality of vent holes (15) are uniformly formed in the circumferential direction of the processing cavity (2), the vent holes (15) are communicated with the cavity (14) and the processing cavity (2), the air exhaust pipe (7) and the air supply pipe (12) are communicated with the cavity (14), and the processing cavity (2) is communicated with the vent holes (15) through the cavity (14).
8. A deposition apparatus for use in a low energy perovskite epitaxial growth process as claimed in claim 6, characterized in that: and a filtering piece (13) is arranged on the air supply pipe (12).
9. A deposition apparatus for a low energy perovskite epitaxial growth process as claimed in claim 3, characterized in that: be provided with collection device (16) on exhaust tube (7), collection device (16) are including filter screen (161), row's miscellaneous mouthful (162) and receiver (163), filter screen (161) set up in exhaust tube (7), and filter screen (161) cover whole exhaust tube (7), arrange miscellaneous mouthful (162) and set up at filter screen (161) towards organism (1) direction one end, receiver (163) are installed on arranging miscellaneous mouthful (162).
10. A deposition apparatus for low energy perovskite epitaxial growth process according to claim 9 characterized in that: a one-way valve (19) is arranged between the collecting device (16) and the machine body (1), and the one-way valve (19) limits the gas pumping pipe (7) to convey gas towards the machine body (1).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211234881.4A CN115433925A (en) | 2022-10-10 | 2022-10-10 | Low-energy perovskite epitaxial growth process and deposition equipment for same |
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| CN202211234881.4A CN115433925A (en) | 2022-10-10 | 2022-10-10 | Low-energy perovskite epitaxial growth process and deposition equipment for same |
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2022
- 2022-10-10 CN CN202211234881.4A patent/CN115433925A/en active Pending
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|---|---|---|---|---|
| CN1055258A (en) * | 1991-03-19 | 1991-10-09 | 浙江大学 | The decompression method of gas epitaxy of semiconductors and system |
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Application publication date: 20221206 |