CN115413365A - 铜基底基板 - Google Patents
铜基底基板 Download PDFInfo
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- CN115413365A CN115413365A CN202180025042.9A CN202180025042A CN115413365A CN 115413365 A CN115413365 A CN 115413365A CN 202180025042 A CN202180025042 A CN 202180025042A CN 115413365 A CN115413365 A CN 115413365A
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 89
- 239000010949 copper Substances 0.000 title claims abstract description 89
- 239000002245 particle Substances 0.000 claims description 32
- 239000011256 inorganic filler Substances 0.000 claims description 31
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 31
- 229920005989 resin Polymers 0.000 claims description 31
- 239000011888 foil Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 9
- 239000011889 copper foil Substances 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000009719 polyimide resin Substances 0.000 claims description 5
- 239000004962 Polyamide-imide Substances 0.000 claims description 4
- 229920002312 polyamide-imide Polymers 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 145
- 238000010438 heat treatment Methods 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 229910000679 solder Inorganic materials 0.000 description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 14
- 238000000576 coating method Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
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- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
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- 238000012856 packing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007611 bar coating method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
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- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
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Abstract
本发明的铜基底基板为依次层叠有铜基板、绝缘层及电路层的铜基底基板,所述绝缘层的厚度(单位:μm)与所述绝缘层在100℃时的弹性模量(单位:GPa)之比为50以上,所述电路层在100℃时的弹性模量为100GPa以下。
Description
技术领域
本发明涉及一种铜基底基板。
本申请基于2020年3月31日在日本申请的专利申请2020-065163号主张优先权,在此引用其内容。
背景技术
作为用于安装半导体元件、LED等电子部件的基板之一,已知有金属基底基板。金属基底基板是依次层叠有金属基板、绝缘层及电路层的层叠体。绝缘层通常由包含绝缘性和耐电压性优异的树脂和导热性优异的无机物填料的绝缘性组合物形成。电子部件通过焊料安装于电路层上。关于这种结构的金属基底基板,在电子部件中产生的热经由绝缘层传递到金属基板上,并从金属基板向外部散热。
关于金属基底基板,若金属基底基板与通过焊料接合到该金属基底基板上的电子部件的热膨胀率的差异较大,则因电子部件的接通/断开或外部环境引起的冷热循环而施加到将电子部件与金属基底基板的电路层接合的焊料上的应力变大,可能会产生焊料裂纹。因此,正在研究降低金属基底基板的绝缘层的弹性模量,以用绝缘层来缓和金属基底基板的金属基板与电子部件的热膨胀率的差异的方案(专利文献1、2)。
专利文献1:日本特开平11-87866号公报
专利文献2:日本特开2016-111171号公报
为了抑制在安装了电子部件时的由冷热循环引起的焊料裂纹的产生并提高对冷热循环的可靠性,通过降低金属基底基板的绝缘层的弹性模量以使绝缘层容易变形,由此缓和由金属基底的膨胀引起的热应力是有效的。然而,由于也存在由电路层的膨胀引起的对焊料的应力,因此仅通过降低金属基底基板的绝缘层的弹性模量,提高对冷热循环的可靠性是有局限性的。
发明内容
本发明是鉴于上述情况而完成的,其目的在于提供一种在安装了电子部件时的对冷热循环的可靠性优异的金属基底基板。
为了解决上述课题,本发明的金属基底基板为依次层叠有铜基底、绝缘层及电路层的铜基底基板,所述金属基底基板的特征在于,所述绝缘层的厚度(单位:μm)与所述绝缘层在100℃时的弹性模量(单位:GPa)之比为50以上,所述电路层在100℃时的弹性模量为100GPa以下。
根据本发明的铜基底基板,由于绝缘层的厚度(单位:μm)与绝缘层在100℃时的弹性模量(单位:GPa)之比较高,为50以上,因此绝缘层容易变形,能够用绝缘层缓和由冷热循环引起的金属基板与电子部件的热膨胀率的差异。并且,电路层在100℃时的弹性模量较低,为100GPa以下,因此能够减小由冷热循环引起的电路层与电子部件的热膨胀率的差异。因此,能够减小因冷热循环而施加到将电子部件与铜基底基板的电路层接合的焊料上的应力。从而,本发明的铜基底基板在安装了电子部件时的对冷热循环的可靠性提高。
在此,在本发明的铜基底基板中,所述绝缘层可以包含聚酰亚胺树脂、聚酰胺酰亚胺树脂或作为它们的混合物的树脂。
在该情况下,由于绝缘层包含这些树脂,因此铜基底基板的绝缘性、耐电压性、耐化学性及力学特性提高。
并且,在本发明的铜基底基板中,所述绝缘层可以包含无机物填料,所述无机物填料的平均粒径在0.1μm以上且20μm以下的范围内。
在该情况下,由于绝缘层包含上述无机物填料,因此铜基底基板的导热性与耐电压性提高。
并且,在本发明的铜基底基板中,所述电路层可以由铜箔、铜合金箔、铝箔或铝合金箔构成。
在该情况下,由于电路层由铜箔、铜合金箔、铝箔或铝合金箔构成,因此导电率高,由此能够减薄电路层。
根据本发明,可以提供一种在安装了电子部件时的对冷热循环的可靠性优异的铜基底基板。
附图说明
图1是本发明的一实施方式所涉及的铜基底基板的概略剖视图。
具体实施方式
以下,参照附图对本发明的一种实施方式进行说明。
图1是本发明的一实施方式所涉及的铜基底基板的概略剖视图。
在图1中,铜基底基板10是依次层叠有铜基板20、绝缘层30及电路层40的层叠体。在铜基底基板10的电路层40上,通过焊料50安装有电子部件60的端子61。
铜基板20是成为铜基底基板10的基底的部件。铜基板20由铜或铜合金构成。
绝缘层30是用于使铜基板20与电路层40绝缘的层。绝缘层30由包含绝缘性树脂31和无机物填料32的绝缘性树脂组合物形成。通过由包含绝缘性高的绝缘性树脂31和导热率高的无机物填料32的绝缘性树脂组合物形成绝缘层30,能够在维持绝缘性的同时,进一步减小从电路层40至铜基板20的整个铜基底基板10的热阻。
绝缘性树脂31优选包含聚酰亚胺树脂、聚酰胺酰亚胺树脂、或它们的混合物。这些树脂由于绝缘性、耐电压性、耐化学性及力学特性等特性优异,因此铜基底基板10的这些特性会提高。
无机物填料32的平均粒径优选在0.1μm以上且20μm以下的范围内。由于无机物填料32的平均粒径为0.1μm以上,因此绝缘层30的导热性提高。由于无机物填料32的平均粒径为20μm以下,因此绝缘层30的耐电压性提高。并且,若无机物填料32的平均粒径在上述范围内,则无机物填料32不易形成凝聚粒子,容易使无机物填料32均匀地分散于绝缘性树脂31中。若无机物填料32在不形成凝聚粒子的情况下以一次粒子或与其接近的微细粒子的形式分散于绝缘性树脂31中,则绝缘层30的耐电压性提高。从提高绝缘层30的导热性的观点考虑,无机物填料32的平均粒径优选在0.3μm以上且20μm以下的范围内。
绝缘层30的无机物填料32的含量优选在50体积%以上且85体积%以下的范围内。由于无机物填料32的含量为50体积%以上,因此绝缘层30的导热性提高。另一方面,由于无机物填料32的含量为85体积%以下,因此绝缘层30的耐电压性提高。并且,若无机物填料32的含量在上述范围内,则容易使无机物填料32均匀地分散于绝缘性树脂31中。若无机物填料32均匀地分散于绝缘性树脂31中,则绝缘层30的力学强度提高。从提高绝缘层30的导热性的观点考虑,无机物填料32的含量尤其优选在50体积%以上且80体积%以下的范围内。
作为无机物填料32,能够使用氧化铝(Al2O3)粒子、氧化铝水合物粒子、氮化铝(AlN)粒子、二氧化硅(SiO2)粒子、碳化硅(SiC)粒子、氧化钛(TiO2)粒子、氮化硼(BN)粒子等。在这些填料中,优选为氧化铝粒子。氧化铝粒子更优选为α-氧化铝粒子。α-氧化铝粒子的振实密度与真密度之比(振实密度/真密度)优选为0.1以上。振实密度/真密度与绝缘层30中的α-氧化铝粒子的填充密度相关,若振实密度/真密度高,则能够提高绝缘层30中的α-氧化铝粒子的填充密度。若绝缘层30中的α-氧化铝粒子的填充密度变高,则绝缘层30中的α-氧化铝粒子的间隔变窄,在绝缘层30中不易产生孔隙(气孔)。振实密度/真密度优选在0.2以上且0.9以下的范围内。并且,α-氧化铝可以是多晶粒子,但尤其优选为单晶粒子。
绝缘层30的厚度(单位:μm)与绝缘层30在100℃时的弹性模量(单位:GPa)之比(厚度/弹性模量)为50以上。由于绝缘层30的厚度/弹性模量较高,为50以上,因此绝缘层30容易变形,厚度方向上的缓冲性较高。因此,绝缘层30的用于缓和由冷热循环引起的铜基板20与电路层40的热膨胀率的差异的作用变高。绝缘层30的厚度/弹性模量优选在50以上且20000以下的范围内,更优选在50以上且2000以下的范围内,进一步优选在50以上且200以下的范围内。绝缘层30在100℃时的弹性模量优选在0.01GPa以上且1GPa以下的范围内,更优选在0.01GPa以上且0.1GPa以下的范围内。并且,绝缘层30的厚度优选在10μm以上且200μm以下的范围内,更优选在50μm以上且200μm以下的范围内。
电路层40形成为电路图案形状。在该形成为电路图案形状的电路层40上,通过焊料50等来接合电子部件60的端子61。作为电路层40的材料,可以使用铜、铜合金、铝、铝合金、金等金属。电路层40优选由铜箔、铜合金箔、铝箔或铝合金箔构成。
由于电路层40在100℃时的弹性模量设为100GPa以下,因此由冷热循环引起的电路层40与电子部件60的热膨胀率的差异所导致的对焊料施加的应力变小。电路层40在100℃时的弹性模量优选在50GPa以上且100GPa以下的范围内。电路层40的厚度优选在20μm以上且200μm以下的范围内。
铜基底基板10的铜基板20、绝缘层30及电路层40的厚度例如能够如下测定。将铜基底基板10进行树脂包埋,并通过机械研磨使截面露出。接着,使用光学显微镜观察所露出的铜基底基板的截面,并测定铜基板20、绝缘层30及电路层40的厚度。
铜基底基板10的铜基板20、绝缘层30及电路层40的弹性模量是在100℃时测定的值。
铜基底基板10的铜基板20及电路层40的弹性模量(拉伸弹性模量)例如可通过如下方式测定。通过溶剂而去除铜基底基板10的绝缘层30,对铜基板20与电路层40进行分离。关于所得到的铜基板20和电路层40,通过动态粘弹性测定而测定弹性模量。铜基底基板10的绝缘层30的弹性模量例如可通过如下方式测定。通过蚀刻而去除铜基底基板10的铜基板20与电路层40,分离出绝缘层30。关于所得到的绝缘层30,通过动态粘弹性测定而测定弹性模量。
作为安装于本实施方式的铜基底基板10上的电子部件60的例子不受特别的限制,可以举出半导体元件、电阻、电容器、石英振荡器等。作为半导体元件的例子,可以举出MOSFET(Metal-oxide-semiconductor field effect transistor:金属氧化物半导体场效应晶体管)、IGBT(Insulated Gate Bipolar Transistor:绝缘栅双极晶体管)、LSI(LargeScale Integration:大规模集成电路)、LED(发光二极管)、LED芯片、LED-CSP(LED-ChipSize Package:LED-芯片级封装)。
以下,对本实施方式所涉及的铜基底基板10的制造方法进行说明。
本实施方式所涉及的铜基底基板10例如可通过包括绝缘层形成工序和电路层压接工序的方法来制造。
在绝缘层形成工序中,在铜基板20上形成绝缘层30而得到带绝缘层的铜基板。关于绝缘层30的厚度(单位:μm),将弹性模量测定用绝缘层30形成于铜基板20上,测定所得到的绝缘层30的弹性模量,并设定厚度/弹性模量为50以上的厚度。作为绝缘层30的形成方法,可以使用涂布法或电沉积法。
涂布法是如下方法:将包含溶剂、绝缘性树脂及无机物填料的涂布液涂布在铜基板20上而形成涂布层,接着,加热涂布层而得到绝缘层30。作为涂布液,可以使用无机物填料分散树脂材料溶液,该无机物填料分散树脂材料溶液包含溶解有绝缘性树脂的树脂材料溶液和分散在该树脂材料溶液中的无机物填料。作为将涂布液涂布在基板表面上的方法,可以使用旋涂法、棒涂法、刮刀涂布法、辊涂法、刮板涂布法、模涂法、凹版涂布法、浸涂法等。
电沉积法是如下方法:将铜基板20浸渍于包含绝缘性树脂粒子和无机物填料的电沉积液中,在基板表面上使绝缘性树脂粒子和无机物填料电沉积而形成电沉积膜,接着,加热所得到的电沉积膜而形成绝缘层30。作为电沉积液,可以使用在包含绝缘性树脂溶液和分散于该绝缘性树脂溶液中的无机物填料的无机物填料分散绝缘性树脂溶液中,通过加入绝缘性树脂材料的不良溶剂以使绝缘性树脂作为粒子析出而制备出的电沉积液。
在电路层压接工序中,在带绝缘层的铜基板的绝缘层30上层叠金属箔,通过对所得到的层叠体进行加热的同时进行加压而形成电路层40,从而得到铜基底基板10。层叠体的加热温度例如为200℃以上,更优选为250℃以上。加热温度的上限低于绝缘性树脂的热分解温度,优选为比热分解温度低30℃的温度以下。压接时施加的压力例如在1MPa以上且30MPa以下的范围内,更优选在3MPa以上且25MPa以下的范围内。压接时间根据加热温度或压力而不同,但通常为10分钟以上且180分钟以下。
根据如上所述结构的本实施方式的铜基底基板10,由于绝缘层30的厚度(单位:μm)与绝缘层30在100℃时的弹性模量(单位:GPa)之比较高,为50以上,因此绝缘层30容易变形,能够用绝缘层30缓和由冷热循环引起的铜基板20与电路层40的热膨胀率的差异。并且,电路层40在100℃时的弹性模量较低,为100GPa以下,因此能够减小由冷热循环引起的电路层40与电子部件60的热膨胀率的差异。因此,能够减小因冷热循环而施加到将电子部件60与铜基底基板10的电路层40接合的焊料50上的应力。从而,本实施方式的铜基底基板10在安装了电子部件60时的对冷热循环的可靠性提高。
并且,在本实施方式的铜基底基板10中,在绝缘层30包含聚酰亚胺树脂、聚酰胺酰亚胺树脂、或它们的混合物的情况下,铜基底基板10的绝缘性、耐电压性、耐化学性及力学特性提高。此外,在绝缘层30包含无机物填料32且无机物填料32的平均粒径在0.1μm以上且20μm以下的范围内的情况下,铜基底基板10的导热性和耐电压性提高。此外,在电路层40由铜箔、铜合金箔、铝箔或铝合金箔构成的情况下,由于导电率高,因此能够减薄电路层40的厚度。
以上,对本发明的实施方式进行了说明,但是本发明并不限定于此,在不脱离本发明的技术思想的范围内可以适当地变更。
实施例
[本发明例1]
将溶剂可溶性聚酰亚胺溶液与α-氧化铝粉末(晶体结构:单晶,平均粒径:0.7μm),按照通过加热而生成的固体物质(绝缘层)中的聚酰亚胺与α-氧化铝粉末的含有率为65体积%的方式进行混合。在所得到的混合物中加入溶剂而稀释成聚酰亚胺的浓度为5质量%。接着,使用SUGINO MACHINE LIMITED制造的Star Burst,对所得到的稀释混合物通过重复进行10次压力为50MPa的高压喷射处理而进行分散处理,从而制备出绝缘层形成用涂布液。
准备了厚度为1000μm、长30mm×宽20mm的铜基板(组成:C1100,韧铜)。在该铜基板的表面上,通过棒涂法涂布绝缘层形成用涂布液而形成了涂布层。接着,将形成有涂布层的铜基板配置于热板上,从室温以3℃/分钟升温至60℃,在60℃加热100分钟之后,进而以1℃/分钟升温至120℃,在120℃加热100分钟,以使涂布层干燥。接着,将铜基板在250℃加热1分钟之后,在400℃加热了1分钟。如此,制作出在表面上形成有由分散有α-氧化铝单晶粒子的聚酰亚胺树脂构成的绝缘层的带绝缘层的铜基板。另外,将绝缘层的厚度设为30μm,将绝缘层在100℃时的弹性模量设为0.27GPa,将厚度/弹性模量设为110。
在所得到的带绝缘层的铜基板的绝缘层上以叠加方式层叠了厚度为70μm的铜箔(100℃时的弹性模量:75GPa,JX Nippon Mining&Metals Corporation制造的GHY5-HA-V2)。接着,在使用碳夹具对所得到的层叠体施加5MPa的压力的同时,在真空中以300℃的压接温度加热120分钟,以压接绝缘层与铜箔。如此,制作出依次层叠有铜基板、绝缘层及铜箔的铜基底基板。
[本发明例2~4、比较例1~2]
除了将绝缘层的厚度和弹性模量、电路层的弹性模量分别改变为下述表1中记载的值以外,以与本发明例1同样的方式制作出铜基底基板。
[评价]
关于在本发明例1~4及比较例1~2中得到的铜基底基板,通过下述方法评价了对冷热循环的可靠性。将其结果示于表1中。
(铜基底基板对冷热循环的可靠性)
在铜基底基板的电路层上涂布Sn-Ag-Cu焊料而形成长2.5cm×宽2.5cm×厚度100μm的焊料层,在该焊料层上搭载2.5cm见方的Si芯片,从而制作出试验体。对所制作的试验体施加3000次循环(其中,单次循环为-40℃×30分钟~150℃×30分钟)的冷热循环。对施加冷热循环后的试验体进行树脂包埋,使用通过研磨截面而生成的试样进行观察,将在焊料层上未产生长度为5mm以上的裂纹的设为“〇”,将产生长度为5mm以上的裂纹的设为“×”。
[表1]
确认到绝缘层的厚度(单位:μm)与弹性模量(单位:GPa)之比(厚度/弹性模量)、以及电路层的弹性模量在本发明的范围内的本发明例1~4的铜基底基板对冷热循环的可靠性优异。这是因为,由于绝缘层的厚度/弹性模量在本发明的范围内,因此通过绝缘层缓和由冷热循环引起的铜基板与电子部件的热膨胀率的差异。还因为,由于电路层的弹性模量在本发明的范围内,因此因电路层与电子部件的热膨胀率的差异而使得施加到焊料的热应力变小。
相对于此,虽然绝缘层的厚度/弹性模量在本发明的范围内,但电路层的弹性模量超过本发明的范围的比较例1的铜基底基板对冷热循环的可靠性较低。这是因为,由于电路层的弹性模量超过本发明的范围,因此因电路层与电子部件的热膨胀率的差异而使得施加到焊料的热应力变大。
并且,虽然电路层的弹性模量在本发明的范围内,但绝缘层的厚度/弹性模量小于本发明的范围的比较例2的铜基底基板对冷热循环的可靠性较低。这是因为,由于绝缘层的厚度/弹性模量小于本发明的范围,因此因由冷热循环引起的铜基板与电路层的热膨胀率的差异而使得施加到焊料的热应力没有充分缓和。
符号说明
10 铜基底基板
20 铜基板
30 绝缘层
31 绝缘性树脂
32 无机物填料
40 电路层
50 焊料
60 电子部件
61 端子
Claims (4)
1.一种铜基底基板,通过依次层叠铜基板、绝缘层及电路层而成,所述铜基底基板的特征在于,
所述绝缘层的厚度与所述绝缘层在100℃时的弹性模量之比为50以上,所述厚度的单位为μm,所述弹性模量的单位为GPa,
所述电路层在100℃时的弹性模量为100GPa以下。
2.根据权利要求1所述的铜基底基板,其特征在于,
所述绝缘层包含聚酰亚胺树脂、聚酰胺酰亚胺树脂、或作为它们的混合物的树脂。
3.根据权利要求1或2所述的铜基底基板,其特征在于,
所述绝缘层包含无机物填料,所述无机物填料的平均粒径在0.1μm以上且20μm以下的范围内。
4.根据权利要求1至3中任一项所述的铜基底基板,其特征在于,
所述电路层由铜箔、铜合金箔、铝箔或铝合金箔构成。
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JP6170486B2 (ja) | 2014-12-05 | 2017-07-26 | デンカ株式会社 | セラミックス樹脂複合体回路基板及びそれを用いたパワー半導体モジュール |
WO2017086474A1 (ja) * | 2015-11-20 | 2017-05-26 | 住友ベークライト株式会社 | 金属ベース基板、回路基板および発熱体搭載基板 |
TWI759506B (zh) * | 2017-08-14 | 2022-04-01 | 日商東洋油墨Sc控股股份有限公司 | 複合構件 |
JP7147313B2 (ja) * | 2018-07-18 | 2022-10-05 | 三菱マテリアル株式会社 | 金属ベース基板 |
JP6577650B1 (ja) | 2018-10-17 | 2019-09-18 | 山口放送株式会社 | 同期放送用測定器 |
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2020
- 2020-03-31 JP JP2020065163A patent/JP2021163880A/ja active Pending
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2021
- 2021-03-29 WO PCT/JP2021/013212 patent/WO2021200792A1/ja unknown
- 2021-03-29 US US17/913,516 patent/US20230105989A1/en active Pending
- 2021-03-29 CN CN202180025042.9A patent/CN115413365A/zh active Pending
- 2021-03-29 KR KR1020227031828A patent/KR20220160563A/ko unknown
- 2021-03-29 EP EP21781993.7A patent/EP4131363A4/en active Pending
- 2021-03-30 TW TW110111517A patent/TW202207381A/zh unknown
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JP2021163880A (ja) | 2021-10-11 |
EP4131363A4 (en) | 2024-04-17 |
EP4131363A1 (en) | 2023-02-08 |
KR20220160563A (ko) | 2022-12-06 |
WO2021200792A1 (ja) | 2021-10-07 |
US20230105989A1 (en) | 2023-04-06 |
TW202207381A (zh) | 2022-02-16 |
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