CN115411484B - Substrate integrated waveguide resonant cavity based on four-corner star-shaped super-structured surface - Google Patents
Substrate integrated waveguide resonant cavity based on four-corner star-shaped super-structured surface Download PDFInfo
- Publication number
- CN115411484B CN115411484B CN202211172994.6A CN202211172994A CN115411484B CN 115411484 B CN115411484 B CN 115411484B CN 202211172994 A CN202211172994 A CN 202211172994A CN 115411484 B CN115411484 B CN 115411484B
- Authority
- CN
- China
- Prior art keywords
- metal patch
- integrated waveguide
- super
- star
- resonant cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a substrate integrated waveguide resonant cavity based on a quadrangle star-shaped super-structured surface, which relates to the technical field of resonant cavities, and comprises the following components: an upper layer metal patch, a dielectric substrate and a lower layer metal patch which are sequentially overlapped from top to bottom; a plurality of through holes penetrating through the upper metal patch, the dielectric substrate and the lower metal patch are formed from the upper surface of the upper metal patch to the lower surface of the lower metal patch; the through holes are uniformly distributed along the edge of the upper layer metal patch; the upper surface of the upper metal patch is surrounded by a plurality of through holes to form an etching area, and a plurality of groove-shaped super-structured surfaces with the same size and four corners and star shapes are etched in the etching area. Compared with the traditional SIW resonant cavity, the upper metal patch provided by the invention etches the four-corner star-shaped super-structure surface, so that the resonant frequency of the SIW resonant cavity is reduced, and the electric size of the resonant cavity is reduced; and the dielectric substrate does not need to use a high-dielectric-constant dielectric substrate, so that the cost is reduced.
Description
Technical Field
The invention relates to the technical field of resonant cavities, in particular to a substrate integrated waveguide resonant cavity based on a quadrangle star-shaped super-structured surface.
Background
With the development of technologies such as mobile communication, satellite communication and radar, a radio frequency system increasingly tends to be integrated, and a miniaturized design requirement is put forward for radio frequency and microwave devices. As an important radio frequency and microwave component, the microwave resonant cavity is widely applied to filters, oscillators, signal sources and the like, and the miniaturization design is particularly important.
The microwave resonant cavity mainly comprises two main types, namely a metal waveguide resonant cavity and a substrate integrated waveguide (Substrate Integrated Waveguide, SIW) resonant cavity. The metal waveguide resonant cavity has the advantages of low loss and high power capacity, but is oversized and heavy, and cannot meet the requirements of miniaturization and integration. While SIW is formed based on planar transmission line designs, it is easier to form integrated designs with other devices and therefore is gaining more and more attention.
The SIW resonant cavity consists of an upper metal patch, a lower metal patch and a dielectric substrate with periodic metal through holes on the periphery, and the resonant frequency is determined by the size of the cavity and the dielectric constant of the dielectric substrate. The miniaturized SIW resonant cavity commonly used at present is mainly designed and formed based on a high-dielectric-constant dielectric substrate, but the manufacturing cost of the high-dielectric-constant dielectric materials is high. Therefore, in practical engineering applications, there is an urgent need for a miniaturized SIW resonator with low manufacturing cost.
Disclosure of Invention
The invention aims to provide a substrate integrated waveguide resonant cavity based on a tetragonal star-shaped super-structured surface, which reduces cost and electric size.
In order to achieve the above object, the present invention provides the following solutions:
a substrate integrated waveguide resonator based on a four-corner star-shaped super-structured surface, comprising: an upper layer metal patch, a dielectric substrate and a lower layer metal patch which are sequentially overlapped from top to bottom; a plurality of through holes penetrating through the upper metal patch, the dielectric substrate and the lower metal patch are formed from the upper surface of the upper metal patch to the lower surface of the lower metal patch; the through holes are uniformly distributed along the edge of the upper-layer metal patch;
and the through holes are surrounded on the upper surface of the upper metal patch to form an etching area, and a plurality of groove-shaped super-structured surfaces with the same size and four-corner star shape are etched in the etching area.
Optionally, the etched region is a rectangular region.
Optionally, a metal patch is attached to the sidewall of the through hole.
Optionally, the diameter of the through hole is 1.1mm.
Optionally, the etched region is 30mm long and 20mm wide.
Optionally, the distances between centers of adjacent ones of the trough-like super-structured surfaces are equal.
Optionally, the upper layer metal patch has a height of 0.035mm.
Optionally, the dielectric substrate has a height of 0.254mm.
Optionally, the lower layer metal patch has a height of 0.035mm.
Optionally, the material of the metal patch includes: at least one of silver, copper and aluminum.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention discloses a substrate integrated waveguide resonant cavity based on a quadrangle star-shaped super-structured surface, which comprises the following components: an upper layer metal patch, a dielectric substrate and a lower layer metal patch which are sequentially overlapped from top to bottom; a plurality of through holes penetrating through the upper metal patch, the dielectric substrate and the lower metal patch are formed from the upper surface of the upper metal patch to the lower surface of the lower metal patch; the through holes are uniformly distributed along the edge of the upper layer metal patch; the upper surface of the upper metal patch is surrounded by a plurality of through holes to form an etching area, and a plurality of groove-shaped super-structured surfaces with the same size and four corners and star shapes are etched in the etching area. Compared with the traditional SIW resonant cavity, the upper metal patch provided by the invention etches the four-corner star-shaped super-structure surface, so that the resonant frequency of the SIW resonant cavity is reduced, and the electric size of the resonant cavity is reduced; and the dielectric substrate does not need to use a high-dielectric-constant dielectric substrate, so that the cost is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a diagram of a structure of a substrate integrated waveguide resonant cavity based on a four-corner star-shaped super-structured surface, provided by an embodiment of the invention;
FIG. 2 is a side view of a substrate integrated waveguide resonant cavity based on a four-corner star-shaped super-structured surface provided by an embodiment of the invention;
FIG. 3 is a top view of a substrate integrated waveguide resonant cavity based on a four-corner star-shaped super-structured surface according to an embodiment of the present invention;
FIG. 4 is a top view of a four-corner star-shaped channel-shaped super-structured surface provided by an embodiment of the present invention;
FIG. 5 is a graph of reflectance of a miniaturized SIW resonator in accordance with an embodiment of the present invention;
fig. 6 is a graph of reflection coefficients of a conventional SIW resonator having the same physical dimensions as a miniaturized SIW resonator in an example of the present invention.
Description of the drawings: 1-upper metal patch, 2-medium substrate, 3-lower metal patch, 4-through hole, 5-groove super structure surface.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a substrate integrated waveguide resonant cavity based on a tetragonal star-shaped groove-shaped super-structure surface, which aims to reduce cost and electric size and can be applied to the technical field of resonant cavities.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Fig. 1 is a block diagram of a substrate integrated waveguide resonant cavity based on a four-corner star-shaped super-structured surface according to an embodiment of the present invention. Fig. 2 is a side view of a substrate integrated waveguide resonant cavity based on a four-corner star-shaped super-structured surface according to an embodiment of the present invention. As shown in fig. 1-2, the substrate integrated waveguide resonant cavity based on the four-corner star-shaped groove-shaped super-structure surface in the embodiment includes: an upper layer metal patch 1, a dielectric substrate 2 and a lower layer metal patch 3 which are sequentially overlapped from top to bottom; a plurality of through holes 4 penetrating through the upper metal patch 1, the dielectric substrate 2 and the lower metal patch 3 are formed from the upper surface of the upper metal patch 1 to the lower surface of the lower metal patch 3; the plurality of through holes 4 are uniformly distributed along the edge of the upper metal patch 1.
The through holes 4 enclose an etching area on the upper surface of the upper metal patch 1, and a plurality of quadrangle star-shaped groove-shaped super-structured surfaces 5 with the same size are etched in the etching area.
Specifically, the distances s between centers of adjacent through holes 4 laid along the same edge of the upper metal patch 1 are all equal. The edge of the upper layer metal patch 1 of the through hole 4 is protected by a certain distance, and the performance of the SIW cavity is not greatly influenced.
The dielectric substrate 2 may be a conventional low cost low dielectric constant dielectric.
As an alternative embodiment, the etched area is a rectangular area.
Specifically, as shown in fig. 3, the length of the etched region is parallel to the length of the upper metal patch 1, and the width of the etched region is parallel to the width of the upper metal patch 1.
As an alternative embodiment, a metal patch is attached to the sidewall of the through hole 4.
As an alternative embodiment, the diameter d of the through hole 4 is 1.1mm.
Specifically, the diameter d of the through holes 4 and the distance s between centers of adjacent through holes 4 meet the general design principle of SIW, that is, the diameter d of the through holes 4 is smaller than one tenth of the working wavelength, and the ratio of the spacing s to the diameter d is smaller than 2.5.
As an alternative embodiment, the etched area has a length L of 30mm and a width W of 20mm.
As an alternative embodiment, the centers of adjacent groove-like super-structured surfaces 5 are equidistant.
Specifically, as shown in fig. 3 to 4, the four-corner stars are formed periodically, which is a structural repeatability, having m periods and n periods in both the length and width directions, respectively, the period sizes being pL and pW, respectively, and the four-corner stars are not in contact with each other and the through hole 4.
A quadrangle star can be considered to be formed by a combination of a square and four isosceles triangles, thereby forming a quadrangle star-like shape. Wherein the square side length b=2mm; the bottom side b=2 mm, the height h=3.3 mm of the isosceles triangle, and the vertex angle is
The overall length of the four-pointed star body, b+2h=8.6 mm, is therefore smaller than pL and pW.
As an alternative embodiment, the height t1 of the upper metal patch 1 is 0.035mm.
As an alternative embodiment, the height H of the dielectric substrate 2 is 0.254mm.
As an alternative embodiment, the height t2 of the lower metal patch 3 is 0.035mm.
As an alternative embodiment, the material of the metal patch includes: at least one of silver, copper and aluminum.
Examples: copper is adopted for the upper metal patch, the lower metal patch and the metal sheet of the side wall of the through hole, and the conductivity is 5.8x10 7 S/m. The dielectric substrate used was Rogers5880, produced by Rogesi corporation, having a relative dielectric constant ε r =2.2, loss tangent tan δ≡0.0009, dielectric loss is relatively low. Wherein the SIW resonator is fed by a lumped port with a characteristic impedance of 50 ohms. The feed port is a rectangular piece with a width of 0.5mm and a height of 0.254mm. The upper and lower surfaces of the feed port are connected to the upper and lower metal patches, respectively, but cannot contact the quadrangular star-shaped structures and the through holes.
As shown in fig. 5, the miniaturized SIW resonator in the example of the present invention has a resonance frequency of 5.0959GHz (corresponding to a wavelength of 58.87 mm). Carrying out wavelength normalization treatment on the transverse dimension of the metal patch of 30mm multiplied by 20mm to obtain the transverse electric dimension of the metal patch of 0.510 lambda multiplied by 0.340 lambda; the normalized electrical dimension with a thickness of 0.254mm is 0.0043λ.
As shown in fig. 6, the conventional SIW resonator having the same physical dimensions as the miniaturized SIW resonator in the example of the present invention does not etch the four-corner star-shaped groove-shaped super-structured surface. It can be seen that the resonant frequency at which the lowest order main mode operates is 6.2279GHz (corresponding to a wavelength of 48.17 mm). Carrying out wavelength normalization treatment on the transverse dimension of the metal patch of 30mm multiplied by 20mm to obtain the transverse electric dimension of the metal patch of 0.623 lambda multiplied by 0.415 lambda; the normalized electrical dimension of 0.0053λ for a thickness of 0.254mm.
Comparing fig. 5 and 6, it can be concluded that: after etching the novel quadrangle star-shaped groove-shaped super-structured surface, the resonance frequency is reduced by 18.2%, and the area of the electrical dimension of the metal patch is reduced by 33%.
The performance pairs of the miniaturized and conventional SIW resonators in the examples of the present invention are shown in table 1:
table 1 comparison of properties
From table 1, it is apparent that the miniaturized SIW resonator in the example of the present invention has a lower resonant frequency and a smaller electrical size for the same physical size of the SIW resonator.
In the field of electromagnetic and electromagnetic wave technology, the miniaturization of device dimensions mainly refers to the miniaturization of "electrical dimensions", i.e. the physical dimensions divided by the operating wavelength. Thus, for the same physical length, if the operating wavelength is different, its electrical dimensions are different: for example, a physical length of the same 30mm, if operating at 1GHz (corresponding wavelength λ=300 mm), its electrical dimension is 0.1λ; if operating at 10GHz (corresponding wavelength λ=30mm), its electrical size is 1λ. Thus, the electrical length (0.1λ) of 30mm at 1GHz is less than the electrical length (1λ) of 10 GHz. Thus, the same physical dimensions, the shorter the electrical dimensions if the operating frequency is lower (corresponding to longer wavelengths). Thus, the miniaturization of devices is actually the miniaturization of "electrical dimensions". Miniaturization implies two situations: 1) The same physical dimensions, the resonance frequency is lower (where the resonance wavelength is longer); 2) The same resonant frequency (where the resonant wavelength is the same), the physical size is smaller.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the above examples being provided only to assist in understanding the device and its core ideas of the present invention; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (8)
1. The utility model provides a substrate integrated waveguide resonant cavity based on super structure surface of quadrangle star-shaped groove, which is characterized in that includes: an upper layer metal patch, a dielectric substrate and a lower layer metal patch which are sequentially overlapped from top to bottom; a plurality of through holes penetrating through the upper metal patch, the dielectric substrate and the lower metal patch are formed from the upper surface of the upper metal patch to the lower surface of the lower metal patch; the through holes are uniformly distributed along the edge of the upper-layer metal patch;
the through holes are surrounded on the upper surface of the upper metal patch to form an etching area, and a plurality of groove-shaped super-constructed surfaces with the same size and in a quadrangle star shape are etched in the etching area;
the dielectric substrate is a low dielectric constant medium and is Rogers5880;
the etching area is a rectangular area; the length of the etching area is 30mm, and the width of the etching area is 20mm.
2. The substrate integrated waveguide resonant cavity based on the four-corner star-shaped super-structured surface according to claim 1, wherein the side wall of the through hole is stuck with a metal patch.
3. The substrate integrated waveguide resonator based on the four-corner star-shaped super-structured surface according to claim 1, wherein the diameter of the through hole is 1.1mm.
4. The substrate integrated waveguide resonator based on a four-corner star-shaped slot-like super-structure surface according to claim 1, wherein the distances between centers of adjacent slot-like super-structure surfaces are equal.
5. The substrate integrated waveguide resonator based on the four-corner star-shaped super-structured surface according to claim 1, wherein the height of the upper metal patch is 0.035mm.
6. The substrate integrated waveguide resonator based on the four-corner star-shaped super-structured surface according to claim 1, wherein the height of the dielectric substrate is 0.254mm.
7. The substrate integrated waveguide resonator based on the four-corner star-shaped super-structured surface according to claim 1, wherein the height of the lower metal patch is 0.035mm.
8. The substrate integrated waveguide resonator based on the four-corner star-shaped super-structured surface according to claim 2, wherein the material of the metal patch comprises: at least one of silver, copper and aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211172994.6A CN115411484B (en) | 2022-09-26 | 2022-09-26 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped super-structured surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211172994.6A CN115411484B (en) | 2022-09-26 | 2022-09-26 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped super-structured surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115411484A CN115411484A (en) | 2022-11-29 |
| CN115411484B true CN115411484B (en) | 2023-05-12 |
Family
ID=84166074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211172994.6A Active CN115411484B (en) | 2022-09-26 | 2022-09-26 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped super-structured surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115411484B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108134166A (en) * | 2017-12-25 | 2018-06-08 | 石家庄创天电子科技有限公司 | Substrate integral wave guide filter and resonator |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200965907Y (en) * | 2006-10-17 | 2007-10-24 | 东南大学 | Double bandpass frequency selection surface |
| CN202019043U (en) * | 2011-02-21 | 2011-10-26 | 上海大学 | Substrate integrated waveguide filter with steep sideband characteristic |
| US8648676B2 (en) * | 2011-05-06 | 2014-02-11 | The Royal Institution For The Advancement Of Learning/Mcgill University | Tunable substrate integrated waveguide components |
| CN105552487A (en) * | 2015-12-16 | 2016-05-04 | 上海大学 | Dual-layer SIW-based dual-bandpass microwave filter |
| CN105609903B (en) * | 2015-12-23 | 2018-11-16 | 西安电子科技大学 | The high frequency-selective surfaces with angle stabilization of selectivity |
| CN109921177A (en) * | 2018-12-31 | 2019-06-21 | 瑞声科技（南京）有限公司 | Filter antenna device |
| CN110854526A (en) * | 2019-10-23 | 2020-02-28 | 南通大学 | Substrate integrated waveguide feed medium end-fire antenna |
-
2022
- 2022-09-26 CN CN202211172994.6A patent/CN115411484B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108134166A (en) * | 2017-12-25 | 2018-06-08 | 石家庄创天电子科技有限公司 | Substrate integral wave guide filter and resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115411484A (en) | 2022-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111969333B (en) | Low-profile frequency reconfigurable dielectric patch antenna | |
| CN111883914B (en) | Dielectric resonator broadband antenna with filter characteristic based on SIW feeding | |
| CN111682308B (en) | Single-layer double-circular-polarization cavity-backed traveling wave antenna with filtering function | |
| CN111682309B (en) | Single-layer single-feed back cavity circularly polarized filter antenna | |
| US11411326B2 (en) | Broadbeam dielectric resonator antenna | |
| CN105226355A (en) | High parasitic band suppression 1/4th mould substrate integration wave-guide frequency-selective surfaces | |
| Sravya et al. | Gain enhancement of patch antenna using L-slotted mushroom EBG | |
| CN108777354B (en) | Microstrip patch antenna based on loading of SIW resonant cavity | |
| CN115411484B (en) | Substrate integrated waveguide resonant cavity based on four-corner star-shaped super-structured surface | |
| CN114171911A (en) | Metamaterial antenna and array applied to millimeter wave communication | |
| CN112467359B (en) | Low-profile broadband dielectric resonator antenna with probe feed | |
| CN110336103B (en) | Frequency band adjustable filter | |
| Li et al. | Wideband frequency selective structures based on stacked microstrip/slot lines | |
| CN114824723B (en) | Horizontal polarization dual-mode dielectric resonator | |
| CN111755784B (en) | Hybrid electromagnetic coupling compact SIW filter based on evanescent mode loading | |
| CN112531355B (en) | +/-45-degree dual-polarized millimeter wave array antenna | |
| US20220359993A1 (en) | Antenna device which is suitable for wireless communications according to a 5g network standard, rf transceiver containing an antenna device, and method for use in wireless communications according to a 5g network standard | |
| Kanth et al. | Design and implementation of ultra-thin wideband fss with sharp sidebands using tripole slots | |
| Xie et al. | Compact SIW bow-tie slot filtering antenna with low cross-polarization | |
| CN202275920U (en) | Resonant cavity | |
| Al-Juboori et al. | A slot filtenna based on gap waveguide using novel sidewalls | |
| Che et al. | Investigations of AMC and its applications for performance enhancement of planar antenna arrays | |
| CN115313035B (en) | SIW-based filter antenna | |
| Munir | Numerical characterization of metamaterials-based patch antenna array | |
| Dumanli et al. | LTCC or LCP, A comparison using cavity backed slot antennas with pin curtains at 60 GHz |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |