CN108134166A - Substrate integral wave guide filter and resonator - Google Patents
Substrate integral wave guide filter and resonator Download PDFInfo
- Publication number
- CN108134166A CN108134166A CN201711417544.8A CN201711417544A CN108134166A CN 108134166 A CN108134166 A CN 108134166A CN 201711417544 A CN201711417544 A CN 201711417544A CN 108134166 A CN108134166 A CN 108134166A
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- resonator
- metal layer
- wave guide
- guide filter
- integral wave
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
- H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
- H01P1/2088—Integrated in a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/18—Waveguides; Transmission lines of the waveguide type built-up from several layers to increase operating surface, i.e. alternately conductive and dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
- H01P7/065—Cavity resonators integrated in a substrate
Abstract
The embodiment of the present invention provides a kind of substrate integral wave guide filter and resonator, wherein, substrate integral wave guide filter includes input port, output port and the multiple resonators being arranged between input port and output port；Resonator includes metallization VIA array, the first metal layer, middle dielectric layer, second metal layer, metallization VIA array connection the first metal layer, second metal layer, to form resonator；Metalized blind vias is provided on middle dielectric layer, metalized blind vias is connected with the first metal layer or second metal layer, using the loading device as resonator.Substrate integral wave guide filter and resonator provided in an embodiment of the present invention by the way that metalized blind vias is set to increase loading device for resonator, so as to obtain the overall compact substrate integral wave guide filter of structure, and then reduce the size of substrate integral wave guide filter.
Description
Technical field
The present embodiments relate to field of communication technology more particularly to a kind of substrate integral wave guide filters and resonance
Device.
Background technology
Substrate integral wave guide filter can effectively filter the frequency other than the frequency point of specific frequency or the frequency point
It removes, obtains the signal after one specific frequency of signal or elimination of a specific frequency.Substrate integral wave guide filter mainly rises
To the effect of FREQUENCY CONTROL, i.e. noise outside rejection band, garbage signal is eliminated.
With the rapid development of mobile communication, satellite communication and Radar Technology, substrate integral wave guide filter is as communication
It is logical for the important passive device for inhibiting interference signal indispensable, mobile communication, satellite communication and Radar Technology etc. in system
News system is higher and higher to the size and performance requirement of substrate integral wave guide filter.Especially micromation, high-performance become
The main direction of development of the communications field, and existing substrate integral wave guide filter size is larger, it is impossible to meet the communications field pair
Micromation demand.
Invention content
In view of this, the embodiment of the present invention is designed to provide a kind of substrate integral wave guide filter and resonator,
To solve the above problem of the prior art.
The embodiment of the present invention provides a kind of substrate integral wave guide filter, including input port, output port, Yi Jishe
Put multiple resonators between the input port and the output port；The resonator includes metallization VIA battle array
Row, the first metal layer, middle dielectric layer, second metal layer, the metallization VIA array connect the first metal layer, described
Second metal layer, to form resonator；Be provided with metalized blind vias on the middle dielectric layer, the metalized blind vias with it is described
The first metal layer or second metal layer connection, using the loading device as the resonator.
Optionally, in any embodiment of the present invention, the metallization VIA array between the two neighboring resonator
With vacancy, to form coupling window.
Optionally, in any embodiment of the present invention, the multiple resonator is connected in series with by the coupling window, is formed
Resonant branch, wherein, the resonant branch includes the first harmonic oscillator branch and the second harmonic oscillator branch, first harmonic oscillator
One end of branch is connect with the input port, and the other end is connect with one end of the second harmonic oscillator branch, and described second is humorous
The other end of oscillator branch connects the output port, the part or all of resonator of the first harmonic oscillator branch and described the
Metallization VIA array described in the part or all of resonator common sparing of two harmonic oscillator branches.
Optionally, it in any embodiment of the present invention, further includes：Additional coupling device, the both ends of the additional coupling device
Two resonators for sharing the metallization VIA array are connected respectively.
Optionally, in any embodiment of the present invention, the additional coupling device includes S type groove lines.
Optionally, in any embodiment of the present invention, the multiple resonator includes the first resonator, the second resonator, the
Three resonators, the 4th resonator, the 5th resonator, sixth resonator, wherein, first resonator connects with the input port
It connects, the sixth resonator is connect with the output port, between the first resonator and the second resonator, the second resonator and
Between three resonators, between third resonator and the 4th resonator, between the 4th resonator and the 5th resonator, the 5th resonator
Include coupling window between sixth resonator, first resonator, second resonator, the third resonator are formed
The first harmonic oscillator branch, the 4th resonator, the 5th resonator, sixth resonator composition described second are humorous
Oscillator branch, the both ends of the additional coupling device connect second resonator, the 5th resonator or described respectively
The both ends of additional coupling device connect first resonator, the sixth resonator respectively.
Optionally, in any embodiment of the present invention, the input port and/or output port include slot-line-type transmission network
Network.
Optionally, in any embodiment of the present invention, the metalized blind vias is arranged on the center of the resonator.
The embodiment of the present invention also provides a kind of resonator, including：Metallization VIA array, the first metal layer, intermediate Jie
Matter layer, second metal layer；The metallization VIA array connects the first metal layer, the second metal layer, to be formed
State the resonator of resonator；Metalized blind vias, the metalized blind vias and first gold medal are provided on the middle dielectric layer
Belong to layer or second metal layer connection, using the loading device as the resonator.
Substrate integral wave guide filter and resonator provided in an embodiment of the present invention are humorous by setting metalized blind vias
The chamber that shakes increases loading device, so as to obtain the overall compact substrate integral wave guide filter of structure, and then reduces substrate and integrates wave
The size of waveguide filter.And the certain situation of size and thickness of material such as wafer etc. of processing substrate integral wave guide filter
Under, the size of substrate integral wave guide filter is smaller, and the substrate integral wave guide filter finished product processed is more, then reduces base
The size of piece integral wave guide filter can reduce the processing cost of substrate integral wave guide filter.
Description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments described in inventive embodiments for those of ordinary skill in the art, can also be obtained according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the structure diagram of a kind of substrate integral wave guide filter that the embodiment of the present invention one provides；
Fig. 2 is the electrical block diagram of a kind of substrate integral wave guide filter that the embodiment of the present invention one provides；
Fig. 3 is a kind of planar structure schematic diagram of substrate integral wave guide filter provided by Embodiment 2 of the present invention；
Fig. 4 is the structure diagram of a kind of resonator that the embodiment of the present invention three provides.
Specific embodiment
Certainly, implement any technical solution of the embodiment of the present invention it is not absolutely required to and meanwhile it is all excellent more than reaching
Point.
In order to which those skilled in the art is made to more fully understand the technical solution in the embodiment of the present invention, below in conjunction with the present invention
The technical solution in the embodiment of the present invention is clearly and completely described in attached drawing in embodiment, it is clear that described reality
It is only part of the embodiment of the embodiment of the present invention to apply example, instead of all the embodiments.Based on the implementation in the embodiment of the present invention
Example, those of ordinary skill in the art's all other embodiments obtained should all belong to the range that the embodiment of the present invention is protected.
Embodiment specific implementation is further illustrated the present invention with reference to attached drawing of the embodiment of the present invention.
Fig. 1 is the structure diagram of a kind of substrate integral wave guide filter that the embodiment of the present invention one provides, and substrate integrates
Waveguide filter 1 includes input port 11, output port 13 and is arranged on the input port 11 and the output port
Multiple resonators 12 between 13.
The resonator 12 includes metallization VIA array, the first metal layer, middle dielectric layer, second metal layer, described
Metallization VIA array connects the first metal layer, the second metal layer, to form resonator；
Be provided with metalized blind vias 14 on the middle dielectric layer, the metalized blind vias 14 and the first metal layer or
The second metal layer connection, using the loading device as the resonator.
In the present embodiment, substrate integration wave-guide ((Substrate integrated waveguide, SIW) it is a kind of new
Emerging transmission line, it realizes the field of waveguide by metallization VIA on dielectric substrate (on the middle dielectric layer i.e. in the application)
Communication mode.Substrate integration wave-guide not only has the higher quality factor of waveguide, higher power capacity, but also with micro-strip line volume
The advantages of small, being easily integrated, thus SIW can be used widely in microwave, millimeter wave equipment.
Specifically, in the present embodiment, the first metal layer of resonator 12, middle dielectric layer, second metal layer are stacked,
Middle dielectric layer is between the first metal layer and second metal layer, and metallization VIA array runs through middle dielectric layer, and even
Logical the first metal layer and second metal layer, wherein, side wall of the metallization VIA array as resonator, the first metal layer and
Second metal layer respectively as resonator top layer and bottom, to form resonator.When substrate integral wave guide filter includes
During multiple resonators 12, the first metal layer, second metal layer, middle dielectric layer can share.
The shape for the resonator that metallization VIA array surrounds can be rectangle, square, circle etc., same substrate collection
A kind of resonator of shape can only be included into waveguide filter, the resonator of various shapes, the present embodiment can also be included
Herein without limiting.
In the present embodiment, by the way that metalized blind vias 14 is set to increase loading device for resonator, so as to obtain structure more
Compact substrate integral wave guide filter, and then reduce the size of substrate integral wave guide filter.And processing substrate integration wave-guide
In the case that the size and thickness of the material of wave filter such as wafer are certain, the size of substrate integral wave guide filter is smaller, adds
The substrate integral wave guide filter finished product that work obtains is more, then reduces the size of substrate integral wave guide filter and can reduce substrate
The processing cost of integral wave guide filter.
Specifically as shown in Fig. 2, Fig. 2 is the circuit knot of a kind of substrate integral wave guide filter that the embodiment of the present invention one provides
Structure schematic diagram, as shown in the figure, IN is the input terminal of substrate integral wave guide filter, OUT is the defeated of substrate integral wave guide filter
Outlet, C1-CNFor loading capacitance of the loading device on substrate integral wave guide filter cavity after equivalent, L1-LN-1For substrate collection
Into inductance of the inductive coupled window between the resonator of waveguide filter after equivalent.
Below with resonator 1 and loading capacitance C1For, to reducing substrate integration wave-guide filter by increasing loading device
The volume of wave device illustrates.
After waveform is by resonator, it can be assumed that the phase pushing figure of waveform is 90 °, when there is no loading device, electricity
Do not include capacitance C in road1, phase pushing figure only determines by resonator so that and the electrical length L/ λ of resonator are 90 °, wherein, L is
The physical length of resonator, λ are the wavelength of waveform.
After loading device is increased, circuit includes capacitance C1If waveform passes through capacitance C1Afterwards, phase pushing figure is 30 °,
So the electrical length of resonator can be compressed to 60 ° by loading device, so as to by increasing loading device substrate collection
Structure into waveguide filter is compacter, and then reduces the size of resonator.
Certainly, above-described embodiment carries out merely illustratively to increasing loading device to reduce the principle of the size of resonator
Illustrate, be not intended as the restriction of the application.
Specifically, Fig. 3 is that a kind of planar structure of substrate integral wave guide filter provided by Embodiment 2 of the present invention is illustrated
Figure, as shown in figure 3, the input port of substrate integral wave guide filter 2 can include input feeding network 21, output port includes
The feeding network of output feeding network 28, the input port and/or output port can specifically include slot-line-type feeding network.
The line of rabbet joint of slot-line-type feeding network can be mode of the special-shaped or integrated waveguide to microstrip line transition line.
Being arranged on the resonator for inputting feeding network 21 and exporting between feeding network 28 is specially：First resonator,
Second resonator, third resonator, the 4th resonator, the 5th resonator, sixth resonator, totally six resonators.Specifically, institute
The metallization VIA array stated between two neighboring resonator has vacancy, to form coupling window, to connect two phases
The resonator of adjacent resonator.Further, the resonator of two adjacent resonators can with common sparing metallization VIA array,
There is vacancy, to form coupling window in shared partially metallised arrays of vias.In the present embodiment, coupling window is perceptual coupling
Close window.
Wherein, first resonator is connect with the input port, and the sixth resonator connects with the output port
Connect, between the first resonator and the second resonator, between the second resonator and third resonator, third resonator and the 4th resonance
Include coupling window between device, between the 4th resonator and the 5th resonator, between the 5th resonator and sixth resonator.
Optionally, it in any embodiment of the present invention, further includes：Additional coupling device, the additional coupling device are arranged on
On the shared metallization VIA array, the both ends of the additional coupling device connect the shared metallization VIA battle array respectively
Two resonators of row.
In the present embodiment, six resonators are connected in series with by the coupling window, form the resonance branch of inverted U-shaped
Road, the first harmonic oscillator branch and the second harmonic oscillator branch are respectively the both sides of inverted U-shaped.Certainly, the present embodiment its
During he realizes, resonant branch may be the other structures such as π shape structures, and the present embodiment is herein than being defined.
First resonator, second resonator, the third resonator form the first harmonic oscillator branch, and described the
Four resonators, the 5th resonator, the sixth resonator form the second harmonic oscillator branch.One end of first harmonic oscillator branch
Connect with the input port, the other end is connect with one end of the second harmonic oscillator branch, the second harmonic oscillator branch it is another
End connects the output port, the part or all of resonator of the first harmonic oscillator branch, with the second harmonic oscillator branch
Part or all of resonator common sparing described in metallization VIA array.Specifically, as shown in the figure, the right side wall of resonator 1
The metallization VIA array shared for its with the left side wall of resonator 6, the left side wall of the right side wall and resonator 5 of resonator 2 are
Its shared metallization VIA array.Certainly, the division of the first harmonic oscillator branch and the second harmonic oscillator branch is herein also only
It is the exemplary division carried out on the basis of inverted U-shaped, the first harmonic oscillator branch can also be by the first resonator, described
Two resonators, the third resonator, the 4th resonator form, the second harmonic oscillator branch can also by the 5th resonator,
The sixth resonator is formed, and the present embodiment is herein without limiting.
Optionally, in the present embodiment, metallization VIA array is made of metallization VIA, and metallization VIA can be vertical
Hole, the shape of metallization VIA can be any shapes such as rectangle, circle, as long as composition metallization VIA array, this
Invention is herein without limiting.
As shown in Figure 1, metallization VIA array has connected the first metal layer, second metal layer, resonator is formd,
In, the resonator of the first resonator be the first resonator 22, the second resonator resonator be the second resonator 23, third resonance
The resonator of device be third resonator 24, the 4th resonator resonator be the resonator of the 4th resonator 25, the 5th resonator
Resonator for the 5th resonator 26, sixth resonator is the 6th resonator 27, and the loading device of six resonators is respectively gold
Categoryization blind hole 29, metalized blind vias 210, metalized blind vias 211, metalized blind vias 212, metalized blind vias 213, metalized blind vias
214, metallization VIA array is 215.
In the present embodiment, additional coupling device, the additional coupling dress can also be included on substrate integral wave guide filter
The both ends put connect two resonators of the shared metallization VIA array respectively.Specifically, the additional coupling device
The both ends that both ends connect second resonator, the 5th resonator or the additional coupling device respectively connect respectively
First resonator, the sixth resonator.In the present embodiment, resonator is connected by inductive coupled window, then adds coupling
It attaches together to be set to and can realize capacitively coupled structure, it, can be another to increase in resonant branch by the additional coupling device of increase
Harmonic oscillator branch can form pair of transmission zeros so as to the transmission passband both sides in substrate integral wave guide filter, from
And improve the squareness factor of substrate integral wave guide filter.Specifically, as shown in figure 3, the additional coupling device includes S type grooves
Line 216.
Squareness factor is to describe the substrate integral wave guide filter steep that response curve changes near cutoff frequency,
It is a parameter for characterizing substrate integral wave guide filter selectivity quality.Rectangle system is increased by using additional coupling device
Number, improves the squareness factor of substrate integral wave guide filter, and then improve the performance of substrate integral wave guide filter.
Certainly, in other realizations of the present embodiment, attachment coupling device can be other be similar to the S-shaped line of rabbet joint can be with
Realize capacitively coupled structure, the present embodiment is herein without limiting.
In addition it should be noted that above-mentioned Fig. 3 only to the specific implementation of substrate integral wave guide filter illustrate
Bright, the arrangement mode of resonator can be other modes, such as resonator can pass through broken line in substrate integral wave guide filter
Shape arrangement mode obtains a plurality of branch, and every branch road, which can include resonator or resonator in varying numbers, to be passed through
Linear fashion or other similar modes are arranged, and the present invention is herein without limiting.
In addition, in any embodiment of the present invention, preferably loading effect, metalized blind vias can be arranged in order to obtain
The center of the resonator.Compared with the other positions for being arranged on resonator, the center of resonator is arranged on, loading effect is more
It is good so that substrate integral wave guide filter it is smaller.And the shape of metalized blind vias can be that rectangle, circle etc. are appointed
The shape of meaning, as long as with loading effect, the present invention is herein without limiting.
In any embodiment of the present invention, in order to further reduce the size of substrate integral wave guide filter, intermediate medium
Layer can be the material for the dielectric constant that dielectric constant is more than air, i.e. dielectric constant is more than 1 material, the material of middle dielectric layer
Material can be single dielectric material or blending agent material, and the present invention is herein without limiting.Specifically, it is intermediate to be situated between
Matter layer can select the substrate of high resistant silicon materials.
Fig. 4 is the structure diagram of a kind of resonator that the embodiment of the present invention three provides, as shown in figure 4, resonator 3 wraps
It includes：Metallization VIA array 31, the first metal layer 32, middle dielectric layer 33, second metal layer 34；
The metallization VIA array 31 connects the first metal layer 32, the second metal layer 34, with described in formation
The resonator of resonator；
Be provided with metalized blind vias on the middle dielectric layer 33, the metalized blind vias and the first metal layer 32 or
The second metal layer 34 connects, using the loading device as the resonator.
Can be that resonator increases loading device, and then add by increasing by setting metalized blind vias in the present embodiment
The size put and reduce resonator is carried, and then reduces the size of resonator.And when the ruler of the material such as wafer of machined resonators etc.
Very little and in the case that thickness is certain, the size of resonator is smaller, and the resonator finished product processed is more, then reduces resonator
Size can reduce the processing cost of resonator.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creation
Property concept, then additional changes and modifications may be made to these embodiments.So appended claims be intended to be construed to include it is excellent
It selects embodiment and falls into all change and modification of the scope of the invention.Obviously, those skilled in the art can be to the present invention
Carry out various modification and variations without departing from the spirit and scope of the present invention.If in this way, these modifications and changes of the present invention
Belong within the scope of the claims in the present invention and its equivalent technologies, then the present invention is also intended to exist comprising these modification and variations
It is interior.
Claims (9)
1. a kind of substrate integral wave guide filter, which is characterized in that including input port, output port and be arranged on described
Multiple resonators between input port and the output port；
The resonator includes metallization VIA array, the first metal layer, middle dielectric layer, second metal layer, the metallization
Arrays of vias connects the first metal layer, the second metal layer, to form resonator；
Metalized blind vias, the metalized blind vias and the first metal layer or described second are provided on the middle dielectric layer
Metal layer connects, using the loading device as the resonator.
2. substrate integral wave guide filter according to claim 1, which is characterized in that between the two neighboring resonator
The metallization VIA array have vacancy, to form coupling window.
3. substrate integral wave guide filter according to claim 2, which is characterized in that the multiple resonator passes through described
Coupling window is connected in series with, and forms resonant branch, wherein, the resonant branch includes the first harmonic oscillator branch and the second resonance
Sub- branch, one end of the first harmonic oscillator branch are connect with the input port, the other end and the second harmonic oscillator branch
One end connection, the other end of the second harmonic oscillator branch connects the output port, the portion of the first harmonic oscillator branch
Divide resonator and metallization VIA array described in the partial resonance device common sparing of the second harmonic oscillator branch.
4. substrate integral wave guide filter according to claim 3, which is characterized in that further include：Additional coupling device, institute
The both ends for stating additional coupling device connect two resonators of the shared metallization VIA array respectively.
5. substrate integral wave guide filter according to claim 4, which is characterized in that the additional coupling device includes S
Type groove line.
6. substrate integral wave guide filter according to claim 4, which is characterized in that the multiple resonator includes first
Resonator, the second resonator, third resonator, the 4th resonator, the 5th resonator, sixth resonator,
Wherein, first resonator is connect with the input port, and the sixth resonator is connect with the output port, the
Between one resonator and the second resonator, between the second resonator and third resonator, third resonator and the 4th resonator it
Between, include coupling window between the 4th resonator and the 5th resonator, between the 5th resonator and sixth resonator, described first
Resonator, second resonator, the third resonator form the first harmonic oscillator branch, the 4th resonator, institute
State the 5th resonator, the sixth resonator forms the first harmonic oscillator branch, the both ends difference of the additional coupling device
The both ends for connecting second resonator, the 5th resonator or the additional coupling device connect described first respectively
Resonator, the sixth resonator.
7. substrate integral wave guide filter according to claim 1, which is characterized in that the input port and/or output
Port includes slot-line-type feeding network.
8. substrate integral wave guide filter according to claim 1, which is characterized in that the metalized blind vias is arranged on institute
State the center of resonator.
9. a kind of resonator, which is characterized in that including：Metallization VIA array, the first metal layer, middle dielectric layer, the second gold medal
Belong to layer；
The metallization VIA array connects the first metal layer, the second metal layer, to form the humorous of the resonator
Shake chamber；
Metalized blind vias, the metalized blind vias and the first metal layer or described second are provided on the middle dielectric layer
Metal layer connects, using the loading device as the resonator.
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| CN201711417544.8A CN108134166A (en) | 2017-12-25 | 2017-12-25 | Substrate integral wave guide filter and resonator |
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| CN109616726A (en) * | 2019-01-30 | 2019-04-12 | 广东大普通信技术有限公司 | A kind of filter and preparation method thereof |
| CN114142193A (en) * | 2021-12-02 | 2022-03-04 | 昆山鸿永微波科技有限公司 | Dual-mode high-reliability silicon-based filter and manufacturing method thereof |
| CN115332747A (en) * | 2022-08-26 | 2022-11-11 | 电子科技大学 | Low-loss quasi-elliptical cavity substrate integrated waveguide band-pass filter |
| CN115411484A (en) * | 2022-09-26 | 2022-11-29 | 上海大学 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped groove-shaped super-structure surface |
| CN115425378A (en) * | 2022-08-26 | 2022-12-02 | 电子科技大学 | Cross-coupling cavity substrate integrated waveguide band-pass filter |
| CN116759772A (en) * | 2023-08-18 | 2023-09-15 | 安徽蓝讯通信科技有限公司 | High-power ultra-high-performance band-pass filter based on HTCC |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109616726A (en) * | 2019-01-30 | 2019-04-12 | 广东大普通信技术有限公司 | A kind of filter and preparation method thereof |
| CN114142193A (en) * | 2021-12-02 | 2022-03-04 | 昆山鸿永微波科技有限公司 | Dual-mode high-reliability silicon-based filter and manufacturing method thereof |
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| CN115425378A (en) * | 2022-08-26 | 2022-12-02 | 电子科技大学 | Cross-coupling cavity substrate integrated waveguide band-pass filter |
| CN115411484A (en) * | 2022-09-26 | 2022-11-29 | 上海大学 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped groove-shaped super-structure surface |
| CN115411484B (en) * | 2022-09-26 | 2023-05-12 | 上海大学 | Substrate integrated waveguide resonant cavity based on four-corner star-shaped super-structured surface |
| CN116759772A (en) * | 2023-08-18 | 2023-09-15 | 安徽蓝讯通信科技有限公司 | High-power ultra-high-performance band-pass filter based on HTCC |
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