CN115398342A - 膜形成用组合物 - Google Patents

膜形成用组合物 Download PDF

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Publication number
CN115398342A
CN115398342A CN202180026228.6A CN202180026228A CN115398342A CN 115398342 A CN115398342 A CN 115398342A CN 202180026228 A CN202180026228 A CN 202180026228A CN 115398342 A CN115398342 A CN 115398342A
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CN
China
Prior art keywords
acid
group
film
substituted
methyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180026228.6A
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English (en)
Chinese (zh)
Inventor
柴山亘
武田谕
志垣修平
石桥谦
加藤宏大
中岛诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
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Nissan Chemical Corp
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Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN115398342A publication Critical patent/CN115398342A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C08G77/08—Preparatory processes characterised by the catalysts used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/41—Compounds containing sulfur bound to oxygen
    • C08K5/42—Sulfonic acids; Derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
CN202180026228.6A 2020-03-31 2021-03-31 膜形成用组合物 Pending CN115398342A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020064761 2020-03-31
JP2020-064761 2020-03-31
PCT/JP2021/014088 WO2021201196A1 (ja) 2020-03-31 2021-03-31 膜形成用組成物

Publications (1)

Publication Number Publication Date
CN115398342A true CN115398342A (zh) 2022-11-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180026228.6A Pending CN115398342A (zh) 2020-03-31 2021-03-31 膜形成用组合物

Country Status (6)

Country Link
US (1) US20230176481A1 (https=)
JP (1) JP7839458B2 (https=)
KR (1) KR102908925B1 (https=)
CN (1) CN115398342A (https=)
TW (1) TWI871457B (https=)
WO (1) WO2021201196A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117567327A (zh) * 2023-11-20 2024-02-20 中国科学院新疆理化技术研究所 系列化合物甲烷磺酸盐及甲烷磺酸盐非线性光学晶体及制备方法和用途

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010113328A (ja) * 2008-10-07 2010-05-20 Jsr Corp 多層レジストプロセス用シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法
CN101946209A (zh) * 2008-02-18 2011-01-12 日产化学工业株式会社 具有环状氨基的含有硅的形成抗蚀剂下层膜的组合物
JP2011215385A (ja) * 2010-03-31 2011-10-27 Jsr Corp 感放射線性組成物
CN102754034A (zh) * 2010-02-19 2012-10-24 日产化学工业株式会社 具有含氮环的含有硅的形成抗蚀剂下层膜的组合物
US20130037921A1 (en) * 2011-08-11 2013-02-14 Kwen-Woo HAN Resist underlayer composition and process of producing integrated circuit devices using same
CN104737076A (zh) * 2012-10-31 2015-06-24 日产化学工业株式会社 具有酯基的含硅抗蚀剂下层膜形成用组合物
CN106662820A (zh) * 2014-07-15 2017-05-10 日产化学工业株式会社 具有卤代磺酰基烷基的含硅抗蚀剂下层膜形成用组合物
CN107077072A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010021290A1 (ja) 2008-08-18 2010-02-25 日産化学工業株式会社 オニウム基を有するシリコン含有レジスト下層膜形成組成物
JP4985987B2 (ja) * 2008-10-15 2012-07-25 信越化学工業株式会社 パターン形成方法
JP5534230B2 (ja) 2008-12-19 2014-06-25 日産化学工業株式会社 アニオン基を有するシリコン含有レジスト下層膜形成組成物
JP5830044B2 (ja) * 2013-02-15 2015-12-09 信越化学工業株式会社 レジスト下層膜形成用組成物及びパターン形成方法
JP6250513B2 (ja) * 2014-10-03 2017-12-20 信越化学工業株式会社 塗布型ケイ素含有膜形成用組成物、基板、及びパターン形成方法
JPWO2016190261A1 (ja) * 2015-05-25 2018-03-08 日産化学工業株式会社 レジストパターン塗布用組成物
JP7373470B2 (ja) * 2019-09-19 2023-11-02 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101946209A (zh) * 2008-02-18 2011-01-12 日产化学工业株式会社 具有环状氨基的含有硅的形成抗蚀剂下层膜的组合物
JP2010113328A (ja) * 2008-10-07 2010-05-20 Jsr Corp 多層レジストプロセス用シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法
CN102754034A (zh) * 2010-02-19 2012-10-24 日产化学工业株式会社 具有含氮环的含有硅的形成抗蚀剂下层膜的组合物
JP2011215385A (ja) * 2010-03-31 2011-10-27 Jsr Corp 感放射線性組成物
US20130037921A1 (en) * 2011-08-11 2013-02-14 Kwen-Woo HAN Resist underlayer composition and process of producing integrated circuit devices using same
CN104737076A (zh) * 2012-10-31 2015-06-24 日产化学工业株式会社 具有酯基的含硅抗蚀剂下层膜形成用组合物
CN106662820A (zh) * 2014-07-15 2017-05-10 日产化学工业株式会社 具有卤代磺酰基烷基的含硅抗蚀剂下层膜形成用组合物
CN107077072A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117567327A (zh) * 2023-11-20 2024-02-20 中国科学院新疆理化技术研究所 系列化合物甲烷磺酸盐及甲烷磺酸盐非线性光学晶体及制备方法和用途

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Publication number Publication date
JPWO2021201196A1 (https=) 2021-10-07
WO2021201196A1 (ja) 2021-10-07
US20230176481A1 (en) 2023-06-08
TW202144513A (zh) 2021-12-01
JP7839458B2 (ja) 2026-04-02
KR20220162160A (ko) 2022-12-07
KR102908925B1 (ko) 2026-01-08
TWI871457B (zh) 2025-02-01

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