CN115394798A - Display panel, manufacturing method thereof and display device - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/645—Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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Abstract
The application provides a display panel, a manufacturing method thereof and a display device, wherein the display panel comprises: a light emitting diode group positioned at one side of the driving substrate; the packaging layer is positioned on one side of the light-emitting diode group, which is far away from the driving substrate; the heat absorption light emitting layer is positioned between the packaging layer and the driving substrate; the red light-emitting diode is contacted with the heat-absorbing light-emitting layer; the endothermic luminescent layer comprises a first conductive material and a second conductive material, the first conductive material is connected with the negative pole of a power supply, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with the positive pole of the power supply, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is greater than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material. The luminous efficiency attenuation of the red light-emitting diode can be reduced, so that the color cast of the luminous display of the display panel is effectively improved, and the display effect of the display panel is improved.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a display panel, a manufacturing method thereof, and a display device.
Background
With the continuous development of display technology, the visual effect of the display panel is continuously improved, and better visual experience is brought to users.
With the development of light-emitting diodes (LEDs), mini-LEDs (Mini-LEDs) and Micro-LEDs (Micro-LEDs) have become the main components of the next generation display technology due to factors such as cost and display effect. The Mini-LED or Micro-LED display panel has the advantages of low cost, light weight, large-scale mass production capacity, long service life and low power consumption, and is concerned by manufacturers of large panels.
However, due to the problem of the manufacturing process of the Mini-LED or Micro-LED display panel, the display panel often generates a certain color shift, such as yellow or cyan, during the light emitting display, which affects the display effect of the display panel.
Therefore, how to effectively improve the color shift of the light-emitting display of the display panel and improve the display effect of the display panel is a technical problem to be solved in the field.
Disclosure of Invention
In view of the above, this summary is provided to introduce concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.
An object of the present application is to provide a display panel, a manufacturing method thereof, and a display device, which can effectively improve color shift of light-emitting display of the display panel and improve display effect of the display panel.
In order to achieve the purpose, the technical scheme is as follows:
in a first aspect, an embodiment of the present application provides a display panel, including:
a drive substrate;
the light emitting diode group is positioned on one side of the driving substrate; the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode;
the packaging layer is positioned on one side of the light emitting diode group, which is far away from the driving substrate;
the heat absorption light-emitting layer is positioned between the packaging layer and the driving substrate; the red light-emitting diode is in contact with the heat absorption luminescent layer; the endothermic luminescent layer comprises a first conductive material and a second conductive material, wherein the first conductive material is connected with a power supply cathode, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with a power supply anode, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is larger than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material.
In a second aspect, an embodiment of the present application provides a method for manufacturing a display panel, including:
providing a driving substrate;
forming a light emitting diode group and a heat absorption luminous layer and binding the light emitting diode group and the heat absorption luminous layer on the driving substrate; the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode;
forming a packaging layer on one side of the light emitting diode group, which is far away from the driving substrate; the heat absorption light emitting layer is positioned between the packaging layer and the driving substrate, and the red light emitting diode is formed by contacting with the heat absorption light emitting layer;
the endothermic luminescent layer comprises a first conductive material and a second conductive material, wherein the first conductive material is connected with a power supply cathode, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with a power supply anode, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is larger than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material.
In a third aspect, embodiments of the present application provide a display device including the display panel as described above.
Compared with the prior art, the embodiment of the application has the following beneficial effects:
the embodiment of the application provides a display panel, a manufacturing method thereof and a display device, wherein the display panel comprises a driving substrate; a light emitting diode group positioned at one side of the driving substrate; the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode; the packaging layer is positioned on one side of the light-emitting diode group, which is far away from the driving substrate; the heat absorption light emitting layer is positioned between the packaging layer and the driving substrate; the red light-emitting diode is contacted with the heat-absorbing light-emitting layer; the heat absorption luminous layer comprises a first conductive material and a second conductive material, the first conductive material is connected with the negative electrode of the power supply, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with the positive electrode of the power supply, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is greater than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material. This application utilizes the heat thermoluminescence that the heat absorption luminescent layer can absorb red emitting diode promptly, not only can increase red emitting diode's luminance, reduces red emitting diode's luminous temperature simultaneously, reduces red emitting diode luminous efficiency decay to effectively improve the luminous demonstration of display panel colour cast, promote display panel's display effect.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
The above and other features, advantages and aspects of various embodiments of the present disclosure will become more apparent by referring to the following detailed description when taken in conjunction with the accompanying drawings. Throughout the drawings, the same or similar reference numbers refer to the same or similar elements. It should be understood that the drawings are schematic and that elements and features are not necessarily drawn to scale.
Fig. 1 is a schematic cross-sectional view illustrating a display panel according to an embodiment of the present disclosure;
fig. 2 is a schematic cross-sectional view illustrating a light-emitting and absorbing layer provided in an embodiment of the present application;
FIG. 3 is a schematic cross-sectional view of another endothermic light-emitting layer provided in an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of another endothermic light-emitting layer provided in an embodiment of the present application;
FIG. 5 is a schematic cross-sectional view of another endothermic light-emitting layer provided in an embodiment of the present application;
fig. 6 is a schematic diagram showing the potential of the contact surface between different structures in a endothermic light-emitting layer provided by an embodiment of the present application;
fig. 7 is a schematic cross-sectional view illustrating a further display panel provided in an embodiment of the present application;
fig. 8 is a flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present disclosure;
fig. 9 shows a schematic diagram of a display device provided in an embodiment of the present application.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.
As described in the background, as display technology is continuously developed, better and better visual experience is brought to users.
With the development of light-emitting diodes (LEDs), mini-LEDs (Mini-LEDs) and Micro-LEDs (Micro-LEDs) have become the main components of the next generation display technology due to factors such as cost and display effect. The Mini-LED or Micro-LED display panel has the advantages of low cost, light weight, large-scale mass production capability, long service life and low power consumption, and is concerned by various large panel manufacturers.
However, due to the problem of the manufacturing process of the Mini-LED or Micro-LED display panel, the display panel often generates a certain color shift, such as yellow or cyan, during the light emitting display, which affects the display effect of the display panel.
In the display panel, the light emitting efficiency of the red light emitting diode is lower than that of the green light emitting diode and the blue light emitting diode due to the problem of the material itself, and the light emitting efficiency is reduced due to the temperature rise in the light emitting process, thereby causing a serious color shift.
In order to solve the above technical problem, embodiments of the present application provide a display panel, a method of manufacturing the same, and a display device, the display panel including a driving substrate; a light emitting diode group positioned at one side of the driving substrate; the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode; the packaging layer is positioned on one side of the light-emitting diode group, which is far away from the driving substrate; the heat absorption light emitting layer is positioned between the packaging layer and the driving substrate; the red light-emitting diode is contacted with the heat-absorbing light-emitting layer; the heat absorption luminous layer comprises a first conductive material and a second conductive material, the first conductive material is connected with the negative electrode of the power supply, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with the positive electrode of the power supply, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is greater than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material. This application utilizes the heat thermoluminescence that the heat absorption luminescent layer can absorb red emitting diode promptly, not only can increase red emitting diode's luminance, reduces red emitting diode's luminous temperature simultaneously, reduces red emitting diode luminous efficiency decay to effectively improve the luminous demonstration of display panel colour cast, promote display panel's display effect.
For a better understanding of the technical solutions and effects of the present application, specific embodiments will be described in detail below with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a schematic cross-sectional structure diagram of a display panel provided in an embodiment of the present application, where the display panel provided in the embodiment of the present application includes:
a drive substrate 1;
a light emitting diode group located on one side of the driving substrate 1; the light-emitting diode group comprises a red light-emitting diode 2, a green light-emitting diode 3 and a blue light-emitting diode 4;
the packaging layer 5 is positioned on one side of the light-emitting diode group away from the driving substrate 1;
a heat-absorbing light-emitting layer 6 between the encapsulation layer 5 and the driving substrate 1; the red light emitting diode 2 is in contact with the endothermic light emitting layer 6; the heat absorption luminous layer 6 comprises a first conductive material and a second conductive material, the first conductive material is connected with the negative electrode of the power supply, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with the positive electrode of the power supply, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is greater than that of the second conductive material; the endothermic light-emitting layer 6 includes a red light-emitting third material.
That is, in the embodiment of the present application, the heat of the red light emitting diode 2 can be absorbed by the heat absorption light emitting layer 6 to perform thermoluminescence, so that not only the luminance of the red light emitting diode 2 can be increased, but also the light emitting temperature of the red light emitting diode can be reduced, and the attenuation of the light emitting efficiency of the red light emitting diode 2 can be reduced, thereby effectively improving the color cast of the light emitting display of the display panel and enhancing the display effect of the display panel.
Specifically, in the embodiment of the present application, the material of the driving substrate 1 may include glass or transparent ceramic or transparent plastic or various flexible or bendable materials, for example, polymer resin such as polyether sulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate (PC), or Cellulose Acetate Propionate (CAP), when the driving substrate 1 is a flexible material, the display panel provided in the embodiment of the present application may include a flexible display panel, which facilitates implementation of new display forms such as various folding screens, rolling screens, etc., and the operation of the folding screens, rolling screens, etc., includes a light emitting display scene in a bent state.
In addition, the encapsulation layer 5 located on the side of the light emitting diode group away from the driving substrate 1 is used to prevent the display panel from being damaged by external water and oxygen, and the encapsulation layer 5 may be a structure in which an inorganic layer, an organic layer, and an inorganic layer are sequentially stacked.
In actual production, the light emitting efficiency of the three lamps of the led group on the side of the driving substrate 1 is not uniform, that is, the light emitting efficiency of the red led 2, the green led 3 and the blue led 4 is not identical. In general, the light emitting efficiency of the red led 2 is low, which causes the light emitted by the green led 3 and the blue led 4 to be strong, thereby generating a color shift of the picture (green + blue). However, in order to avoid the brightness difference among the red led 2, the green led 3 and the blue led 4 being too large, the driving current of the red led 2 or the duty ratio of the driving current needs to be increased, and the larger driving current and duty ratio cause the brightness of the red led 2 to decay faster than the brightness of the blue led and the green led, and as the temperature of the red led 2 rises after being turned on, the luminous efficiency of the red led 2 further decays, which may exceed 50%.
Therefore, in the embodiment of the present application, the heat absorption light emitting layer 6 contacting with the red light emitting diode 2 may be disposed between the encapsulation layer 5 and the driving substrate 1, so as to reduce the temperature of the red light emitting diode 2 and improve the light emitting efficiency thereof, and in addition, the layer may absorb heat to emit light, so as to improve the light emitting brightness of the red light emitting diode 2 and compensate for the problem of low light emitting efficiency of the red light emitting diode 2.
In particular, since electron diffusion occurs due to contact between different conductive materials, it is always diffused from a low work function material to a high work function material. Contact potential is generated when equilibrium is reached at ambient temperature, with low work function metals being at positive potential and high work function metals being at negative potential. If current flows through the contact surface, electrons heat up when they flow from a positive potential to a negative potential, and heat up when they flow from the negative potential to the positive potential.
Therefore, in the embodiment of the present application, referring to fig. 2, fig. 2 is a schematic cross-sectional structure diagram of an endothermic light-emitting layer provided in the embodiment of the present application, the endothermic light-emitting layer 6 may include a first conductive material 11 and a second conductive material 12, the first conductive material 11 is connected to a negative electrode of a power supply, and the second conductive material 12 is electrically connected to the first conductive material 11, that is, electrons flow from the first conductive material 11 to the second conductive material 12.
Meanwhile, since the work function of the first conductive material 11 is larger than that of the second conductive material 12, that is, electrons flow from the high work function first conductive material 11 at a negative potential to the low work function second conductive material 12 at a positive potential, the contact surface absorbs heat when electrons flow from the negative potential to the positive potential.
In addition, the heat-absorbing light-emitting layer 6 includes the third material 13 emitting red light, so that light can be emitted while absorbing heat, the temperature of the red light-emitting diode 2 is reduced, the emission brightness of the red light-emitting diode 2 is increased, and the emission efficiency is increased, so that the color shift of the display panel in light-emitting display is effectively improved, and the display effect of the display panel is improved. Alternatively, an electrode material may be provided on a side of the third material 13 close to the anode, so as to realize that the third material 13 emits light under the action of current.
In a possible implementation manner, referring to fig. 3, fig. 3 is a schematic cross-sectional structure diagram of another endothermic light-emitting layer provided in this embodiment of the present application, where the first conductive material 11 provided in this embodiment of the present application includes a first metal copper 111, the second conductive material 12 includes a metal barium 121, the first metal copper 111 and the metal barium 121 are stacked, the first metal copper 111 is connected to a power supply negative electrode, and the metal barium 121 is located on a side of the first metal copper 111 away from the power supply negative electrode;
the second conductive material 12 includes a second copper metal 122, the first conductive material 11 includes a platinum metal 112, the second copper metal 122 and the platinum metal 112 are stacked, the second copper metal 122 is connected to the positive electrode of the power supply, and the platinum metal 112 is located on a side of the second copper metal 122 away from the positive electrode of the power supply. That is, in the present embodiment, the first conductive material 11 may be connected to the negative electrode of the power source, and the second conductive material 12 is electrically connected to the first conductive material 11; and/or the second conductive material 12 may be connected to the positive electrode of the power source, and the first conductive material 11 is electrically connected to the second conductive material 12.
As the work function of the metal barium is 2.5eV, the work function of the metal copper is 4.65eV, and the work function of the metal platinum is 5.65eV. Therefore, at the interface between the first copper metal 111 and the barium metal 121 at the negative terminal of the power supply, electrons flow from the first copper metal 111 with high work function to the barium metal 121 with low work function, i.e. electrons flow from a negative potential to a positive potential, so that the interface absorbs heat; on the contact surface between the second metal copper 122 at the positive terminal of the power supply and the metal platinum 112, electrons also flow from the metal platinum 112 with high work function to the second metal copper 122 with low work function, i.e. the electrons also flow from a negative potential to a positive potential, so that the contact surface also absorbs heat, thereby realizing the heat absorption of the heat absorption light emitting layer, alleviating the reduction of the light emitting efficiency caused by the temperature rise of the red light emitting diode, and effectively improving the color cast of the display panel.
It should be noted that fig. 3 only shows one possible relative position among the first conductive material 11, the second conductive material 12, and the third material 13, and other stacking manners are also possible, and the embodiment of the present application is not particularly limited herein, and can be specifically set by a person skilled in the art according to practical situations.
In a possible implementation manner, referring to fig. 4, fig. 4 is a schematic cross-sectional structure of another endothermic light emitting layer provided in this embodiment, a third material 13 provided in this embodiment may include a P-type semiconductor material 131 in contact with the first conductive material 11, and an N-type semiconductor material 132 in contact with the second conductive material 12; the N-type semiconductor material 132 forms a PN junction 133 with the P-type semiconductor material 131 to emit light under the action of current.
Optionally, the N-type semiconductor material 132 provided in the embodiment of the present application may include N-type gallium phosphide or N-type gallium arsenide phosphide; the P-type semiconductor material 131 may include P-type gallium phosphide or P-type gallium arsenide phosphide. Namely, the material gallium phosphide or gallium arsenide phosphide with red light can be utilized to compensate the defect of insufficient red light of the red light-emitting diode.
In a possible implementation manner, referring to fig. 5, fig. 5 is a schematic cross-sectional structure diagram of another endothermic light emitting layer provided in an embodiment of the present application, an N-type semiconductor material 132 provided in an embodiment of the present application may include a heavily doped N-type semiconductor material 1321 and a low doped N-type semiconductor material 1322 that are sequentially stacked; the P-type semiconductor material 131 may include a heavily doped P-type semiconductor material 1311 and a low doped P-type semiconductor material 1312, which are sequentially stacked.
For example, referring to fig. 6, fig. 6 is a schematic diagram illustrating the potential of the contact surface between different structures in the endothermic light-emitting layer according to an embodiment of the present application, when the heavily doped N-type semiconductor material 1321 is heavily doped N-type gallium phosphide (GaP), the low doped N-type semiconductor material 1322 is low doped N-type gallium phosphide, the heavily doped P-type semiconductor material 1311 is heavily doped P-type gallium phosphide, and the low doped P-type semiconductor material 1312 is low doped P-type gallium phosphide:
electrons flow from the negative electrode to the positive electrode, and on the contact surface (a-b in figure 6) of the first metal copper 111 and the metal barium 121 at the negative end of the power supply, the electrons flow from a negative potential to a positive potential, and the contact surface absorbs heat; no potential difference exists between the contact surfaces (b-c) of the metal barium 121 and the heavily doped N-type gallium phosphide 1321, and ohmic contact is realized, so that only small heat is generated due to small resistance; the contact surfaces (c-d) of heavily doped N-type gallium phosphide 1321 and low doped N-type gallium phosphide 1322 have concentration electron diffusion, the generated potential difference is low, the electron current flows from a positive potential to a negative potential, the contact surfaces generate heat, and the heating amount is small; electrons and holes at the P-N junction (d-e) are combined to emit light (energy consumption is equivalent to heat generation); the contact surfaces (e-f) of the low-doped P-type gallium phosphide 1312 and the heavily-doped P-type gallium phosphide 1311 have hole concentration diffusion, the generated potential difference is also low, the hole current flows from a negative potential to a positive potential, the contact surfaces generate heat, and the heat generation amount is small (due to the fact that hole movement can be equivalent to electron reverse movement, and in order to represent the potential, an equivalent electron current mode is adopted in fig. 6); the contact surface (f-g) of the heavily doped P-type gallium phosphide 1311 and the metal platinum 112 has no potential difference and is ohmic contact, and only generates little heat because the resistance is very small; electrons also at the interface (g-h) of the high work function platinum metal 112 and the positive terminal lead second metal copper 122 flow from a negative potential to a positive potential and the interface absorbs heat.
Therefore, the heat absorption light-emitting layer generally shows heat absorption to the outside, which is beneficial to reducing the temperature of the red light-emitting diode.
Alternatively, referring to fig. 5 and fig. 7, fig. 7 is a schematic cross-sectional structure view of another display panel provided in the embodiment of the present application, in which a low-doped N-type semiconductor material 1322 is located on a side of the heavily doped N-type semiconductor material 1321 away from the driving substrate 1; the low doped P-type semiconductor material 1312 is located on a side of the heavily doped P-type semiconductor material 1311 away from the encapsulation layer 5.
That is, the endothermic luminescent layer 6 provided in the embodiment of the present application may be located between the red light emitting diode 2 and the encapsulation layer 5, the positive and negative electrodes of the red light emitting diode 2 may be welded to the positive and negative power supplies on the driving substrate 1, the positive and negative electrodes of the endothermic luminescent layer 6 may be welded to the positive and negative power supplies on the driving substrate 1 through the first groove 61 and the second groove 62, respectively, and in order to avoid short circuits, an insulating material may be disposed on the side walls of the first groove 61 and the second groove 62, thereby realizing endothermic luminescent of the endothermic luminescent layer 6.
It should be noted that the red light emitting diode 2 and the endothermic light emitting layer 6 may also be connected to the positive and negative power supplies on the driving substrate 1 by other manners, for example, the red light emitting diode 2 and the endothermic light emitting layer 6 may be separately bound to different positive and negative power supply pads on the driving substrate 1, or the connection between the endothermic light emitting layer 6 and the positive and negative power supplies on the driving substrate 1 may also be implemented by a bridge spanning manner.
Optionally, referring to fig. 7, the display panel provided in the embodiment of the present application may further include a color conversion layer 9 located on a side of the red light emitting diode 2 away from the driving substrate 1; the heat absorption and light emission layer 6 is located between the color conversion layer 9 and the red light emitting diode 2, and the color conversion layer 9 is arranged, so that light emitted by the light emitting diode group can be purer, the display effect of the display panel is improved, and the use experience of a user is enhanced.
In a possible implementation manner, referring to fig. 1, the endothermic light-emitting layer 6 provided in the embodiment of the present application may be located between the red light-emitting diode 2 and the driving substrate 1, and the transmittance of the red light-emitting diode is greater than or equal to a preset threshold.
That is, the endothermic light-emitting layer 6 and the red light-emitting diode 2 can be formed by using the same substrate, the positive and negative electrodes of the endothermic light-emitting layer 6 can be welded to the positive and negative power supplies on the driving substrate 1, and the positive and negative electrodes of the red light-emitting diode 2 can be welded to the positive and negative power supplies on the driving substrate 1 through the first groove 61 and the second groove 62, respectively, and in order to avoid short circuit, an insulating material can be disposed on the side walls of the first groove 61 and the second groove 62, thereby realizing endothermic light emission of the endothermic light-emitting layer 6.
It should be noted that the red light emitting diode 2 and the endothermic light emitting layer 6 may also be connected to the positive and negative power supplies on the driving substrate 1 by other manners, for example, the red light emitting diode 2 and the endothermic light emitting layer 6 may be separately bound to different positive and negative power supply pads on the driving substrate 1, or the connection between the red light emitting diode 2 and the positive and negative power supplies on the driving substrate 1 may also be implemented by a bridge spanning manner.
In addition, in order to allow the light emitted from the endothermic light-emitting layer 6 to pass through the red light-emitting diode 2, the transmittance of the red light-emitting diode may be greater than or equal to a preset threshold. Alternatively, the substrate of the red light emitting diode 2 may comprise a sapphire substrate, which is light permeable. The buffer layer on the substrate may be a gallium nitride material, which is a translucent material, so that the endothermic light-emitting layer 6 can emit light through the red light-emitting diode 2.
It should be noted that the light output of the above-mentioned endothermic light-emitting layer 6 depends on the transmittance of the material and the light intensity of the endothermic light-emitting layer 6, and the embodiment of the present application is not particularly limited herein, and can be specifically set by those skilled in the art according to practical situations.
In addition, as shown in fig. 1 and fig. 7, the display panel provided in the embodiment of the present application may further include a first insulating layer 7 covering the light emitting diode group, and a Black Matrix (BM) 8 between the encapsulation layer 5 and the first insulating layer 7.
The embodiment of the application provides a display panel, which comprises a driving substrate; a light emitting diode group positioned at one side of the driving substrate; the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode; the packaging layer is positioned on one side of the light-emitting diode group, which is far away from the driving substrate; the heat absorption light emitting layer is positioned between the packaging layer and the driving substrate; the red light-emitting diode is contacted with the heat-absorbing light-emitting layer; the heat absorption luminous layer comprises a first conductive material and a second conductive material, the first conductive material is connected with the negative electrode of the power supply, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with the positive electrode of the power supply, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is greater than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material. This application utilizes the heat thermoluminescence that the heat absorption luminescent layer can absorb red emitting diode promptly, not only can increase red emitting diode's luminance, reduces red emitting diode's luminous temperature simultaneously, reduces red emitting diode luminous efficiency decay to effectively improve the luminous demonstration of display panel colour cast, promote display panel's display effect.
Referring to fig. 8, fig. 8 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present application, including:
s101: providing a driving substrate;
s102: forming a light emitting diode group and a heat absorption light emitting layer and binding the light emitting diode group and the heat absorption light emitting layer on the driving substrate; the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode;
s103: forming a packaging layer on one side of the light emitting diode group, which is far away from the driving substrate; the heat absorption light emitting layer is positioned between the packaging layer and the driving substrate, and the red light emitting diode is formed by contacting with the heat absorption light emitting layer;
the endothermic luminescent layer comprises a first conductive material and a second conductive material, wherein the first conductive material is connected with a power supply cathode, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with a power supply anode, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is larger than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material.
Optionally, a semiconductor layer is formed on one side of the substrate of the red light emitting diode; the forming the endothermic light-emitting layer includes: and forming the heat absorption light emitting layer on the same side of the semiconductor layer in a vapor phase epitaxy or liquid phase epitaxy growth mode.
That is, as shown in fig. 7, when the endothermic light-emitting layer 6 is to be formed between the red light-emitting diode 2 and the encapsulating layer 5, the endothermic light-emitting layer 6 may be formed by vapor phase epitaxy or liquid phase epitaxy.
For example, gallium arsenide phosphide (GaAsP) or gallium phosphide (GaP) can be formed by Vapor phase epitaxy or liquid phase epitaxy, and a CVD (Chemical Vapor Deposition) method (Ga, HCl, asH3 and H2 method and Ga, asCl3 and N2 method) is commonly used for the Vapor phase epitaxy process.
The liquid phase epitaxy process is to cover the surface of the substrate with Ga or GaAs molten pool and then to grow epitaxial layer by cooling, and may also adopt temperature gradient growth method or electric epitaxy method applying direct current. At present, the liquid phase epitaxy method of gallium arsenide phosphide (GaAsP) is mainly used for manufacturing gallium arsenide double heterojunction lasers, solar cells and the like, and is used for manufacturing devices (microwave devices) in a small amount. Therefore, the gallium arsenic phosphide (GaAsP) by the liquid phase epitaxy process meets the coating requirement of the application.
Optionally, a semiconductor layer is formed on one side of the substrate of the red light emitting diode; the forming the endothermic light-emitting layer includes: and forming the heat absorption and light emission layer on one side of the substrate far away from the semiconductor layer in an electrodeposition mode.
That is, as shown in fig. 1, when the endothermic light-emitting layer 6 is to be formed between the red light-emitting diode 2 and the drive substrate 1, the endothermic light-emitting layer 6 may be formed by electrodeposition.
Namely, the nano gallium arsenide phosphide or gallium phosphide film is prepared by using a current deposition method, and the requirements of the scheme applied to micro-scale light-emitting diodes (micro-LEDs) are met.
The embodiment of the application provides a manufacturing method of a display panel, which comprises the steps of providing a driving substrate; forming a light emitting diode group and a heat absorption light emitting layer and binding the light emitting diode group and the heat absorption light emitting layer on the driving substrate; the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode; forming a packaging layer on one side of the light-emitting diode group, which is far away from the driving substrate; the heat absorption light emitting layer is positioned between the packaging layer and the driving substrate, and the red light emitting diode is formed by contacting with the heat absorption light emitting layer; the heat absorption luminous layer comprises a first conductive material and a second conductive material, the first conductive material is connected with the negative electrode of the power supply, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with the positive electrode of the power supply, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is greater than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material. This application utilizes the heat thermoluminescence that the heat absorption luminescent layer can absorb red emitting diode promptly, not only can increase red emitting diode's luminance, reduces red emitting diode's luminous temperature simultaneously, reduces red emitting diode luminous efficiency decay to effectively improve the luminous demonstration of display panel colour cast, promote display panel's display effect.
Fig. 9 is a schematic plan view of a display device according to an embodiment of the present disclosure. As can be seen from the figure, the display device 99 includes a display panel 1111, and the display panel 1111 is the display panel described in any of the embodiments. The display device 99 provided in the embodiment of the present application may be other display devices with a display function, such as a mobile phone, a tablet, a computer, a television, a vehicle-mounted display device, an instrument display device, and the like, and the embodiment of the present application is not particularly limited. The display device 99 provided in the embodiment of the present application has the beneficial effects of the display panel provided in the embodiment of the present application, and specific reference may be made to the specific description of the display panel in the above embodiment, which is not repeated herein.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the method embodiment, since it is substantially similar to the display panel embodiment, the description is simple, and the relevant points can be referred to the partial description of the display panel embodiment.
The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.
Claims (12)
1. A display panel, comprising:
a drive substrate;
the light emitting diode group is positioned on one side of the driving substrate; the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode;
the packaging layer is positioned on one side, far away from the driving substrate, of the light emitting diode group;
the heat absorption light-emitting layer is positioned between the packaging layer and the driving substrate; the red light-emitting diode is in contact with the heat-absorbing light-emitting layer; the endothermic luminescent layer comprises a first conductive material and a second conductive material, wherein the first conductive material is connected with a power supply cathode, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with a power supply anode, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is larger than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material.
2. The display panel according to claim 1, wherein the first conductive material comprises a first metal copper, the second conductive material comprises a metal barium, the first metal copper and the metal barium are stacked, the first metal copper is connected with a power supply negative electrode, and the metal barium is located on a side of the metal copper away from the power supply negative electrode;
the second conductive material comprises second metal copper, the first conductive material comprises metal platinum, the second metal copper and the metal platinum are arranged in a stacked mode, the second metal copper is connected with the positive electrode of a power supply, and the metal platinum is located on one side, far away from the positive electrode of the power supply, of the second metal copper.
3. The display panel of claim 2, wherein the third material comprises a P-type semiconductor material in contact with the first conductive material, an N-type semiconductor material in contact with the second conductive material; and PN junctions are formed between the N-type semiconductor material and the P-type semiconductor material.
4. The display panel according to claim 3, wherein the N-type semiconductor material comprises N-type gallium phosphide or N-type gallium arsenide phosphide; the P-type semiconductor material comprises P-type gallium phosphide or P-type gallium arsenide phosphide.
5. The display panel according to claim 3, wherein the N-type semiconductor material comprises a heavily doped N-type semiconductor material and a lowly doped N-type semiconductor material which are sequentially stacked;
the P-type semiconductor material comprises a heavily doped P-type semiconductor material and a low doped P-type semiconductor material which are sequentially stacked;
the low-doped N-type semiconductor material is positioned on one side of the heavily-doped N-type semiconductor material far away from the driving substrate;
the low-doped P-type semiconductor material is positioned on one side of the heavily-doped P-type semiconductor material far away from the packaging layer.
6. The display panel according to claim 1, further comprising: the color conversion layer is positioned on one side of the red light emitting diode, which is far away from the driving substrate;
the heat absorption luminous layer is positioned between the color conversion layer and the red light emitting diode.
7. The display panel according to claim 1, wherein the endothermic light-emitting layer is located between the red light-emitting diode and the driving substrate;
the transmissivity of the red light emitting diode is greater than or equal to a preset threshold value.
8. The display panel of claim 7, wherein the substrate of the red light emitting diode comprises a sapphire substrate.
9. A method of manufacturing a display panel, comprising:
providing a driving substrate;
forming a light emitting diode group and a heat absorption light emitting layer and binding the light emitting diode group and the heat absorption light emitting layer on the driving substrate; the light-emitting diode group comprises a red light-emitting diode, a green light-emitting diode and a blue light-emitting diode;
forming a packaging layer on one side of the light emitting diode group, which is far away from the driving substrate; the heat absorption light-emitting layer is positioned between the packaging layer and the driving substrate, and the red light-emitting diode is formed by contacting with the heat absorption light-emitting layer;
the endothermic luminescent layer comprises a first conductive material and a second conductive material, wherein the first conductive material is connected with a power supply cathode, the second conductive material is electrically connected with the first conductive material, and/or the second conductive material is connected with a power supply anode, the first conductive material is electrically connected with the second conductive material, and the work function of the first conductive material is larger than that of the second conductive material; the endothermic light-emitting layer includes a red-emitting third material.
10. The method according to claim 9, wherein a semiconductor layer is formed on one side of the substrate of the red light emitting diode; the forming the endothermic light-emitting layer includes:
and forming the heat absorption light emitting layer on the same side of the semiconductor layer in a vapor phase epitaxy or liquid phase epitaxy growth mode.
11. The method of claim 9, wherein a semiconductor layer is formed on one side of the substrate of the red light emitting diode; the forming the endothermic light-emitting layer includes:
and forming the heat absorption and light emission layer on one side of the substrate far away from the semiconductor layer in an electro-deposition mode.
12. A display device characterized by comprising the display panel according to any one of claims 1 to 8.
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