CN115383618B - Ultrasonic thinning equipment for wafer - Google Patents

Ultrasonic thinning equipment for wafer Download PDF

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Publication number
CN115383618B
CN115383618B CN202211023507.XA CN202211023507A CN115383618B CN 115383618 B CN115383618 B CN 115383618B CN 202211023507 A CN202211023507 A CN 202211023507A CN 115383618 B CN115383618 B CN 115383618B
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Prior art keywords
channel
wafer
communicated
adsorption
air
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CN202211023507.XA
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CN115383618A (en
Inventor
刘全益
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Shenzhen Mengqi Semiconductor Equipment Co ltd
Shenzhen Everwin Precision Technology Co Ltd
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Shenzhen Mengqi Semiconductor Equipment Co ltd
Shenzhen Everwin Precision Technology Co Ltd
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Priority to CN202211023507.XA priority Critical patent/CN115383618B/en
Publication of CN115383618A publication Critical patent/CN115383618A/en
Application granted granted Critical
Publication of CN115383618B publication Critical patent/CN115383618B/en
Priority to PCT/CN2023/102469 priority patent/WO2024041159A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/04—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes subjecting the grinding or polishing tools, the abrading or polishing medium or work to vibration, e.g. grinding with ultrasonic frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/007—Weight compensation; Temperature compensation; Vibration damping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/02—Frames; Beds; Carriages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/20—Drives or gearings; Equipment therefor relating to feed movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to the technical field of semiconductor product processing equipment, in particular to ultrasonic thinning equipment for a wafer, which comprises an adsorption unit and a grinding unit, wherein the adsorption unit comprises a vacuum sucker, the vacuum sucker is communicated with an external vacuumizing machine through an air pipe, the grinding unit comprises an ultrasonic grinding head vertically arranged above the vacuum sucker, the vacuum sucker comprises a disc body, a plurality of air channels and adsorption holes are uniformly distributed in the disc body, the adsorption holes are vertically arranged, supporting columns are arranged in the adsorption holes in a sealing and sliding mode, first springs are arranged below the supporting columns, the upper ends of the supporting columns upwards extend out of the upper surface of the disc body, a locking mechanism is arranged in the disc body, and when the wafer is attached to the upper surface of the disc body, the locking mechanism locks the supporting columns and enables the upper inner cavities of the adsorption holes to be communicated with the air channels so that the vacuumizing machine can keep adsorption on the wafer. The invention can effectively prevent the wafer from being adsorbed to generate deformation and fragmentation.

Description

Ultrasonic thinning equipment for wafer
Technical Field
The invention relates to the technical field of semiconductor product processing equipment, in particular to ultrasonic thinning equipment for a wafer.
Background
In the semiconductor processing industry, the thickness of a wafer is thick after slicing, the use requirement of a product cannot be met, the wafer is generally required to be thinned, the wafer is thinned to a certain thickness through thinning equipment, grinding and thinning are one of common means for thinning the wafer, the wafer is mainly ground and thinned through grinding equipment, ultrasonic grinding equipment is used for arranging an ultrasonic transducer on a grinding head to enable the grinding head to vibrate during rotary grinding so as to improve the grinding effect on a workpiece, and the ultrasonic grinding equipment has the advantages of good surface quality after grinding, difficulty in blocking of abrasive particles and the like, and is gradually applied to the wafer thinning process.
When the wafer is thinned by the conventional wafer thinning equipment, the wafer is usually adsorbed and fixed on a sucker and then ground and thinned, because the grinding head of the ultrasonic grinding equipment has high-frequency vibration and generates disturbance in more directions on the wafer during grinding, the vacuumizing equipment needs to generate larger adsorption force to prevent the wafer from being separated from the sucker during ultrasonic vibration thinning, when the wafer to be thinned is placed on the sucker and runs the vacuumizing equipment, the vacuumizing equipment with large adsorption force can instantaneously generate larger adsorption force on the wafer placed on the sucker, the instantaneously generated large adsorption force can impact the wafer, and the wafer is easily deformed or even cracked when being adsorbed instantaneously.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present invention provides an ultrasonic thinning apparatus for a wafer, which is used for grinding and thinning a wafer and effectively preventing the wafer from being deformed or broken.
In order to solve the technical problems, the invention adopts a technical scheme that: the ultrasonic thinning equipment for the wafer comprises an adsorption unit for fixing the wafer and a grinding unit for grinding the surface of the wafer, wherein the adsorption unit comprises a vacuum chuck for adsorbing the wafer, the vacuum chuck is communicated with an external vacuum extractor through an air pipe, and the grinding unit comprises an ultrasonic grinding head vertically arranged above the vacuum chuck;
the vacuum chuck comprises a chuck body, wherein a plurality of air channels and adsorption holes are uniformly distributed in the chuck body, the air channels are horizontally arranged and have a common air inlet, the air inlet is communicated with a vacuumizer in a sealing manner through an air pipe, the adsorption holes are vertically arranged, the lower ends of the adsorption holes are communicated with the air channels, the upper ends of the adsorption holes are communicated with the outer space of the chuck body, supporting columns are arranged in the adsorption holes in a sealing and sliding manner, the supporting columns are stepped columns, the diameters of the upper parts of the stepped columns are smaller than those of the lower parts of the stepped columns, first springs are arranged below the supporting columns, the upper ends of the first springs are fixedly connected with the supporting columns, the lower ends of the first springs are fixedly connected with the inner walls of the air channels, and when the vacuum chuck is not vacuumized, the upper ends of the supporting columns extend out of the upper surface of the chuck body upwards under the elastic force of the first springs;
and a locking mechanism is arranged in the disc body, when the vacuum chuck is vacuumized to enable the wafer to be attached to the upper surface of the disc body, the upper end surface of the supporting column is positioned below the upper surface of the disc body, and the locking mechanism locks the supporting column and enables the upper inner cavity of the adsorption hole to be communicated with the air flow channel so that the vacuumizer can keep adsorbing the wafer.
When the device is used, the air flow channel is disconnected from the vacuumizing machine, the upper end of the support column under the elasticity of the first spring is positioned above the upper surface of the wafer body, when the wafer is correctly placed on the vacuum chuck, the wafer is contacted with the support column, so that a gap is reserved between the wafer and the upper surface of the wafer body, when the air flow channel is communicated with the vacuumizing machine and the vacuumizing machine is used for vacuumizing the air flow channel, the support column overcomes the elasticity of the first spring to slide downwards under the negative pressure generated by the vacuumizing machine, the wafer moves downwards until contacting the upper surface of the wafer body, the lower support column under the negative pressure of the vacuumizing machine continues to slide downwards to enable the upper end surface of the support column to be separated from the wafer, when the support column continues to slide downwards, the upper inner cavity of the adsorption hole generates negative pressure to adsorb the wafer on the upper surface of the wafer body, the sliding speed of the support column is limited due to the support of the first spring, so that the adsorption force generated by the upper inner cavity of the adsorption hole on the wafer is gradually increased, and when the upper end surface of the support column is separated from the wafer body by the first spring, the locking mechanism locks the support column and enables the upper end of the adsorption hole to be communicated with the air flow channel so as to keep the adsorption channel to grind the wafer, so as to grind the wafer, and grind the wafer, and the wafer, the wafer.
Due to the buffering of the first spring, the wafer is adsorbed on the upper surface of the disc body in a gradual process, so that the adsorption of the vacuumizer on the wafer cannot cause instant large-force impact, and the wafer is effectively prevented from being cracked and deformed.
Further, the locking mechanism comprises a first channel, a second channel, a transverse slideway and a locking piece, wherein the first channel, the second channel and the transverse slideway are formed in the disc body, and the locking piece is arranged in the transverse slideway;
the second channel is vertically arranged, the lower end of the second channel is communicated with the airflow channel, and the upper end of the second channel is communicated with the inner cavity at the upper part of the adsorption hole;
the transverse slideway is horizontally arranged, the transverse slideway is communicated with the second channel in a crossing manner, one end of the transverse slideway is communicated with the middle inner cavity of the adsorption hole, when the vacuum chuck is not vacuumized, the lower side wall of the support column seals one end of the transverse slideway communicated with the middle inner cavity of the adsorption hole, the other end of the transverse slideway is a closed end, and the closed end of the transverse slideway is provided with an air hole for communicating the inner cavity of the transverse channel with the outer space of the tray body;
the locking piece comprises a sliding block connected with the transverse slide way in a sealing and sliding manner and a locking rod fixedly arranged at one end, close to the adsorption hole, of the sliding block, the locking rod is arranged in a gap with the transverse slide way, a vertical flow hole vertically penetrates through the sliding block on the sliding block, a tension spring is arranged at the closed end of the transverse slide way, one end of the tension spring is fixedly connected with the sliding block, the other end of the tension spring is fixedly connected with the inner wall of the closed end of the transverse slide way, and when the vacuum suction cup is not vacuumized, the vertical flow hole and the second channel are staggered to enable the sliding block to block the second channel and enable the locking rod to be completely positioned in the transverse slide way;
the first channel is vertically arranged below the lock rod, the lower end of the first channel is communicated with the airflow channel, and the upper end of the first channel is communicated with the transverse slideway;
the upper portion lateral wall of support column be provided with locking lever complex lockhole, work as the support column lapse makes the lockhole with when the locking lever aligns, the up end of support column is located the upper surface below of disk body, works as the locking lever inserts during the lockhole, the vertical flow hole on the slider with the second passageway aligns and makes the second passageway switch on.
When the vacuum chuck is vacuumized, the support column slides downwards, the first channel communicated with the air channel enables the sliding block to be adsorbed, and one end of the sliding block, close to the adsorption hole, moves to enable the lock rod to extrude the side wall of the support column, when the support column slides downwards to enable the lock hole to be aligned with the lock rod, the lock rod is inserted into the lock hole, the vertical flow hole in the sliding block is aligned with the second channel to enable the second channel to be communicated, the air channel is communicated with the upper inner cavity of the adsorption hole to enable the vacuumizing machine to continuously adsorb a wafer, and the support column is fixed and cannot slide up and down after the lock rod is inserted into the lock hole when the vacuumizing machine continuously adsorbs the wafer.
After grinding is finished, vacuumizing is stopped, the adsorption force of the space on one side, close to the adsorption hole, of the sliding block is reduced, the sliding block drives the lock rod to slide towards the direction far away from the adsorption hole under the tension of the tension spring to enable the lock rod to be separated from the lock hole, the vertical flow hole in the sliding block and the second channel are staggered again to enable the second channel to be separated, and the supporting column slides upwards under the elasticity of the first spring to enable the wafer to be separated from the upper surface of the disc body.
Furthermore, an adsorption pore is formed by penetrating through a support column along the axis of the support column, a plug rod is coaxially arranged below the support column and the adsorption pore, the lower end of the plug rod is fixedly connected with the bottom wall of the air flow channel, the upper end of the plug rod is arranged in a gap with the bottom of the support column, and when the support column slides downwards to enable the lower surface of a wafer to be close to the upper surface of the disk body, the plug rod is inserted into the adsorption pore and is in sealing sliding connection with the adsorption pore to plug the adsorption pore.
Adsorb the pore can adsorb the wafer at the support column up end when the evacuation makes the support column gliding, the wafer breaks away from the support column when preventing the support column gliding and slides, because the adsorption affinity that adsorbs the less production of pore diameter is less can not produce the impact to the wafer, the gag lever post inserts and adsorbs the pore and can prevent that the support column that the atmospheric pressure of support column upper and lower space equals when the up end of support column leaves the wafer is no longer gliding downwards, and then it can't be fixed with the support column locking to cause the lockhole to align, when the support column can't be fixed by the locking, the support column can cause the disk body shake to make a round trip to slide from top to bottom in adsorbing the hole.
It is further, a plurality of the air current say and radially set up and communicate each other, the air inlet is located disk body bottom center, and is a plurality of absorption hole equipartition is on a plurality of concentric circles, and the disk body surface corresponds the ring channel that sets up a plurality of and absorption hole intercommunication, sets up the intake duct that makes air current say inner chamber and disk body exterior space intercommunication on the disk body, set up control on the disk body the solenoid valve of intake duct break-make.
After the wafer is ground, the air channel is disconnected from the vacuumizing machine, the electromagnetic valve is controlled to open the air channel to enable the air channel to be communicated with the space outside the disk body to enable air to flow into the disk body, and the wafer can be separated from the surface of the disk body and the sliding block can be reset under the resilience force of the first spring and the tension spring without adopting equipment to fill air into the disk body.
Furthermore, the vacuum chuck is arranged on the dividing plate, the dividing plate is fixedly connected to the rack, 3 vacuum chucks are uniformly distributed on the dividing plate in the circumferential direction, the rack is vertically and fixedly connected with a vertical support, the grinding unit comprises a first ultrasonic grinding head and a second ultrasonic grinding head, the first ultrasonic grinding head and the second ultrasonic grinding head are used for roughly machining the wafer, the second ultrasonic grinding head is used for finely machining the wafer, the vertical support is vertically provided with a sliding rail, the first ultrasonic grinding head and the second ultrasonic grinding head vertically slide, and the vertical support is fixedly connected with a first feeding cylinder and a second feeding cylinder, which are used for driving the first ultrasonic grinding head and the second ultrasonic grinding head to slide and feed along the sliding rail.
Further, a shell used for protecting the dividing plate is arranged on the machine frame.
Further, a portal frame is fixedly connected to the rack, a horizontal workbench is fixedly connected to the portal frame, and a feeding unit for feeding wafers, a positioning unit for centering and positioning the wafers and a manipulator for transferring the wafers are arranged on the horizontal workbench.
Furthermore, a rotary pneumatic joint is arranged at the air inlet, one end of the air pipe is communicated with the pneumatic rotary joint in a sealing mode, and the other end of the air pipe is communicated with the vacuumizing machine in a sealing mode.
Furthermore, a valve body switch for controlling the on-off of the air pipe is arranged on the air pipe.
Furthermore, a plurality of the adsorption holes are uniformly distributed on 3 concentric circles, 6 air flow channels are provided, and the 6 air flow channels are radially and uniformly distributed and are communicated with each other.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a perspective view of the present invention.
Fig. 2 is a schematic view of the combination of the index plate and the frame.
FIG. 3 is a schematic view of a horizontal table and a housing.
Fig. 4 is a schematic view of a vertical support with a grinding head mounted.
FIG. 5 is a schematic view of a vacuum chuck.
Fig. 6 is a top view of the vacuum chuck.
Fig. 7 is an enlarged view of a portion a of fig. 5.
Fig. 8 is a schematic structural view of the vacuum chuck after the support column is locked.
Fig. 9 is an enlarged view of a portion B in fig. 8.
Fig. 10 is a schematic view of the arrangement of the air flow channels in the tray body.
The meaning of the reference symbols in the drawings is:
a frame-10; a gantry-101; a vertical support-102; a horizontal workbench-103; a feeding unit-104; a positioning unit-105; a robot-106; vacuum chuck-20; a tray body-201; an airflow channel-202; adsorption hole-203; an air inlet-204; a trachea-205; a support column-206; keyhole-2061; adsorption pores-2062; a first spring-207; a plug-rod-208; an annular groove-209; a first channel-301; a second channel-302; a transverse slide-303; air vent-304; a slider-305; a vertical flow hole-3051; lock bar-306; a tension spring-307; an air inlet channel-401; a solenoid valve-402; an index plate-50; a first ultrasonic grinding head-501; a second ultrasonic grinding head-502; a slide rail-503; a first feed cylinder-504; a second feed cylinder-505; -a housing-60; wafer-70.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
As shown in fig. 1-4, the ultrasonic thinning apparatus for a wafer according to the present disclosure is used for grinding and thinning a wafer and effectively preventing the wafer from being deformed or cracked, and includes a frame 10, and an index plate 50, a gantry 101 and a vertical support 102 are fixedly connected to the frame 10.
3 vacuum suction cups 20 are uniformly distributed on the index plate 50 in the circumferential direction, a horizontal workbench 103 is fixedly connected to the portal frame 101, a feeding unit 104 for feeding a wafer 70, a positioning unit 105 for centering and phasing the wafer 70 and a manipulator 106 for transferring the wafer 70 are arranged on the horizontal workbench 103, the vertical support 102 is vertically arranged, a first ultrasonic grinding head 501 for roughly processing the wafer 70 and a second ultrasonic grinding head 502 for finely processing the wafer are arranged on the vertical support 102, a slide rail 503 for vertically sliding the first ultrasonic grinding head 501 and the second ultrasonic grinding head 502 is vertically arranged on the vertical support 102, the vertical support 102 is fixedly connected with a first feeding cylinder 504 and a second feeding cylinder 505 for respectively driving the first ultrasonic grinding head 501 and the second ultrasonic grinding head 502 to slide and feed along the slide rail 503, and a housing 60 for protecting the index plate 50 is arranged on the machine frame 10.
As shown in fig. 5, 6, and 10, the vacuum chuck 20 includes a tray body 201, a plurality of flow channels 202 and adsorption holes 203 are uniformly distributed in the tray body 201, in this embodiment, there are 6 flow channels 202, 6 flow channels 202 are radially and uniformly distributed and are mutually communicated and have a common air inlet 204, the air inlet 204 is located at the center of the bottom of the tray body 201, the air inlet 204 is in sealed communication with a vacuum extractor through an air pipe 205, specifically, a pneumatic rotary joint may be hermetically connected at the air inlet 204, one end of the air pipe 205 is in sealed communication with the pneumatic rotary joint, the other end of the air pipe 205 is in sealed communication with the vacuum extractor, and a valve switch for controlling the on-off of the air pipe 205 is disposed on the air pipe 205.
The adsorption holes 203 are vertically arranged, in this embodiment, the adsorption holes 203 are uniformly distributed on 3 concentric circles, the surface of the tray body 201 is correspondingly provided with a plurality of annular grooves 209 communicated with the adsorption holes 203, the tray body 201 is provided with an air inlet channel 401 for communicating the inner cavity of the air channel 202 with the external space of the tray body 201, and the tray body 201 is provided with an electromagnetic valve 402 for controlling the on-off of the air inlet channel 401. The lower end of the suction hole 203 is communicated with the air flow channel 202, the upper end of the suction hole 203 is communicated with the space outside the disc body 201, a support column 206 is arranged in the suction hole 203 in a sealing and sliding manner, the support column 206 is a stepped column with the upper diameter smaller than the lower diameter, so that the upper outer wall of the support column 206 is arranged in a gap with the inner wall of the suction hole 203, a first spring 207 is arranged below the support column 206, the upper end of the first spring 207 is fixedly connected with the support column 206, the lower end of the first spring 207 is fixedly connected with the inner wall of the air flow channel 202, and when the vacuum chuck 20 is not vacuumized, the upper end of the support column 206 extends upwards out of the upper surface of the disc body 201 under the elastic force of the first spring 207;
an adsorption pore 2062 is arranged through the support column 206 along the axis of the support column 206, a plug rod 208 is arranged below the support column 206 and coaxial with the adsorption pore 2062, the lower end of the plug rod 208 is fixedly connected with the bottom wall of the air flow channel 202, the upper end of the plug rod 208 is arranged in a gap with the bottom of the support column 206, and when the support column 206 slides downwards to enable the lower surface of the wafer 70 to approach the upper surface of the tray body 201, the plug rod 208 is inserted into the adsorption pore 2062 and is in sealing sliding connection with the adsorption pore 2062 to block the adsorption pore 2062.
When the vacuum chuck 20 is vacuumized to make the wafer 70 adhere to the upper surface of the tray body 201, the upper end surfaces of the supporting columns 206 are located below the upper surface of the tray body 201, and the locking mechanism locks the supporting columns 206 and enables the upper inner cavities of the adsorption holes 203 to be communicated with the gas flow channels 202, so that the vacuumizer keeps adsorbing the wafer 70.
As shown in fig. 7 and 9, the locking mechanism includes a first channel 301, a second channel 302, a transverse slide 303 and a locking member disposed in the transverse slide 303, which are formed in the tray 201;
the second channel 302 is vertically arranged, the lower end of the second channel 302 is communicated with the airflow channel 202, and the upper end of the second channel 302 is communicated with the upper inner cavity of the adsorption hole 203;
the transverse slide way 303 is a horizontally arranged square slide way, the transverse slide way 303 is communicated with the second channel 302 in a crossing manner, one end of the transverse slide way 303 is communicated with the middle inner cavity of the adsorption hole 203, when the vacuum chuck 20 is not vacuumized, the lower side wall of the support column 206 seals one end of the transverse slide way 303 communicated with the middle inner cavity of the adsorption hole 203, the other end of the transverse slide way 303 is a closed end, and the closed end of the transverse slide way 303 is provided with an air hole 304 for communicating the inner cavity of the transverse channel with the outer space of the tray body 201;
the locking piece comprises a sliding block 305 in sealed sliding connection with the transverse sliding way 303 and a locking rod 306 fixedly arranged at one end, close to the adsorption hole 203, of the sliding block 305, the locking rod 306 and the transverse sliding way 303 are arranged in a clearance mode, a vertical flow hole 3051 is vertically formed in the sliding block 305 in a penetrating mode and penetrates through the sliding block 305, a tension spring 307 is arranged at the closed end of the transverse sliding way 303, one end of the tension spring 307 is fixedly connected with the sliding block 305, the other end of the tension spring 307 is fixedly connected with the inner wall of the closed end of the transverse sliding way 303, and when the vacuum chuck 20 is not vacuumized, the vertical flow hole 3051 and the second channel 302 are staggered to enable the sliding block 305 to block and plug the second channel 302 and enable the locking rod 306 to be completely located in the transverse sliding way 303;
the first channel 301 is vertically arranged below the lock bar 306, the lower end of the first channel 301 is communicated with the air flow channel 202, and the upper end of the first channel 301 is communicated with the transverse slide way 303;
as shown in fig. 7 to 9, a lock hole 2061 matched with the lock bar 306 is disposed on an upper side wall of the support column 206, when the support column 206 slides downward so that the lock hole 2061 is aligned with the lock bar 306, an upper end surface of the support column 206 is located below an upper surface of the disc 201, and when the lock bar 306 is inserted into the lock hole 2061, the vertical flow hole 3051 on the slider 305 is aligned with the second channel 302 so that the second channel 302 is conducted.
When the invention is used, the electromagnetic valve 402 is controlled to close the air inlet channel 401, the air channel 202 is disconnected with the vacuum extractor, at this time, the upper end of the supporting column 206 under the elasticity of the first spring 207 extends upwards out of the disc body 201, at this time, 2 positive vacuum suction cups in the 3 vacuum suction cups 20 are respectively positioned under the first ultrasonic grinding head 501 and the second ultrasonic grinding head 502, the remaining vacuum suction cups 20 are positioned outside the shell 60,
the wafer 70 in the loading unit 104 is transferred to the positioning unit 105 by the control manipulator 106 for positioning, and then the positioned wafer 70 is transferred to and placed on the upper end surface of the support column 206 of the vacuum chuck 20 located outside the housing 60, when the gas flow channel 202 is communicated with the vacuum-pumping machine to vacuumize the gas flow channel 202 by the vacuum-pumping machine, the wafer 70 is adsorbed on the upper end surface of the support column 206 by the adsorption fine hole 2062, and the support column 206 slides downward against the elastic force of the first spring 207 under the negative pressure generated by the vacuum-pumping machine. The wafer 70 moves downwards until contacting the upper surface of the tray body 201, the support pillar 206 slides downwards continuously to make the upper end surface of the support pillar 206 leave the wafer 70, at this time, the plug rod 208 is inserted into the adsorption pore 2062 to block the adsorption pore 2062, when the support pillar 206 slides downwards continuously, the inner cavity at the upper part of the adsorption hole 203 generates negative pressure to adsorb the wafer 70 on the upper surface of the tray body 201, and the sliding speed of the support pillar 206 is limited due to the support of the first spring 207, so that the adsorption force generated by the inner cavity at the upper part of the adsorption hole 203 on the wafer 70 is gradually increased.
The first channel 301 communicated with the gas flow channel 202 enables the slider 305 to be sucked to move towards one end close to the suction hole 203 so that the lock rod 306 presses the side wall of the support column 206, when the support column 206 slides downwards to enable the lock hole 2061 to be aligned with the lock rod 306, when the lock rod 306 is inserted into the lock hole 2061, the vertical flow hole 3051 on the slider 305 is aligned with the second channel 302 so that the second channel 302 is communicated, further the gas flow channel 202 is communicated with the inner cavity at the upper part of the suction hole 203 so that the wafer 70 is continuously sucked by the vacuum pump, when the vacuum pump continuously sucks the wafer 70, the lock rod 306 is inserted into the lock hole 2061, then the support column 206 is fixed and cannot slide up and down, at this time, the index plate 50 is driven to rotate by 120 degrees, the vacuum chuck 20 with the wafer 70 placed therein is positioned below the first ultrasonic grinding head 501 for rough machining, then the upper wafer 70 is placed on the vacuum chuck 20 positioned outside the housing 60 for rough machining, after the rough machining is finished machining, the index plate 50 is rotated by 120 degrees so that the rough machining wafer 70 is positioned below the second ultrasonic grinding head 501 for fine machining, the slider 201 and the slider 201 is opened, after the fine machining gas flow channel 201 and the slider 201 are communicated with the slide 201, the slider 201 can be controlled by the spring 307, and the vacuum chuck 201, and the slider 201 can be disconnected.
Due to the buffering of the first spring 207, the wafer 70 is adsorbed on the upper surface of the tray 201 in a gradual process, so that the adsorption of the vacuumizer to the wafer 70 does not cause instant large-force impact, and the wafer 70 is effectively prevented from being cracked and deformed.
The above are merely examples of the present invention, and common general knowledge of known specific structures and characteristics in the schemes is not described herein. It should be noted that, for those skilled in the art, without departing from the structure of the present invention, several changes and modifications can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicability of the patent. The scope of the claims of the present application shall be determined by the contents of the claims, and the description of the embodiments and the like in the specification shall be used to explain the contents of the claims.

Claims (10)

1. The utility model provides an supersound attenuate equipment for wafer, is including the absorption unit that is used for fixed wafer and the grinding unit that carries out the grinding to the wafer surface, the absorption unit is including the vacuum chuck that is used for adsorbing the wafer, vacuum chuck passes through trachea and outside vacuumizer intercommunication, the grinding unit include vertical set up in the supersound grinding head of vacuum chuck top, its characterized in that:
the vacuum chuck comprises a chuck body, wherein a plurality of air channels and adsorption holes are uniformly distributed in the chuck body, the air channels are horizontally arranged and have a common air inlet, the air inlet is communicated with a vacuumizer in a sealing manner through an air pipe, the adsorption holes are vertically arranged, the lower ends of the adsorption holes are communicated with the air channels, the upper ends of the adsorption holes are communicated with the outer space of the chuck body, supporting columns are arranged in the adsorption holes in a sealing and sliding manner, the supporting columns are stepped columns, the diameters of the upper parts of the stepped columns are smaller than those of the lower parts of the stepped columns, first springs are arranged below the supporting columns, the upper ends of the first springs are fixedly connected with the supporting columns, the lower ends of the first springs are fixedly connected with the inner walls of the air channels, and when the vacuum chuck is not vacuumized, the upper ends of the supporting columns extend out of the upper surface of the chuck body upwards under the elastic force of the first springs;
and a locking mechanism is arranged in the disc body, when the vacuum chuck is vacuumized to enable the wafer to be attached to the upper surface of the disc body, the upper end surface of the supporting column is positioned below the upper surface of the disc body, and the locking mechanism locks the supporting column and enables the upper inner cavity of the adsorption hole to be communicated with the air flow channel so that the vacuumizer can keep adsorbing the wafer.
2. The ultrasonic thinning apparatus for wafers of claim 1, wherein: the locking mechanism comprises a first channel, a second channel, a transverse slideway and a locking piece, wherein the first channel, the second channel and the transverse slideway are formed in the disc body, and the locking piece is arranged in the transverse slideway;
the second channel is vertically arranged, the lower end of the second channel is communicated with the airflow channel, and the upper end of the second channel is communicated with the upper inner cavity of the adsorption hole;
the transverse slideway is horizontally arranged, the transverse slideway is communicated with the first channel in a cross mode, one end of the transverse slideway is communicated with the middle inner cavity of the adsorption hole, when the vacuum chuck is not vacuumized, the lower side wall of the support column seals one end, communicated with the middle inner cavity of the adsorption hole, of the transverse slideway, the other end of the transverse slideway is a closed end, and the closed end of the transverse slideway is provided with an air hole for communicating the inner cavity of the transverse channel with the outer space of the tray body;
the locking piece comprises a sliding block in sealing sliding connection with the transverse slideway and a locking rod fixedly arranged at one end, close to the adsorption hole, of the sliding block, the locking rod is arranged in a gap with the transverse slideway, a vertical flow hole vertically penetrates through the sliding block on the sliding block, a tension spring is arranged at the closed end of the transverse slideway, one end of the tension spring is fixedly connected with the sliding block, the other end of the tension spring is fixedly connected with the inner wall of the closed end of the transverse slideway, and when the vacuum sucker is not vacuumized, the vertical flow hole and the second channel are staggered so that the sliding block blocks the second channel and the locking rod is completely positioned in the transverse slideway;
the first channel is vertically arranged below the lock rod, the lower end of the first channel is communicated with the airflow channel, the upper end of the first channel is communicated with the transverse slideway, and the side wall of the upper part of the support column is provided with a lock hole matched with the lock rod.
3. The ultrasonic thinning apparatus for wafers of claim 2, wherein: the edge the axis of support column runs through the support column and sets up the absorption pore, the below of support column with the coaxial stopper rod that sets up of absorption pore, the lower extreme of stopper rod with the diapire fixed connection of air current channel, the upper end of stopper rod with the bottom clearance setting of support column, when the support column glides downwards and makes the lower surface of wafer be close to the upper surface of disk body, the stopper rod inserts in the absorption pore with the sealed sliding connection of absorption pore will adsorb the pore shutoff.
4. The ultrasonic thinning apparatus for wafers of claim 3, wherein: it is a plurality of the air current runner is radial setting and communicates each other, the air inlet is located disk body bottom center, and is a plurality of adsorb the hole equipartition on a plurality of concentric circles, the disk body surface correspond set up a plurality of and adsorb the ring channel of hole intercommunication, set up the intake duct that makes air current runner inner chamber and disk body exterior space intercommunication on the disk body, set up control on the disk body the solenoid valve of intake duct break-make.
5. The ultrasonic thinning apparatus for wafers of claim 4, wherein: the vacuum chuck sets up on the graduated disk, graduated disk fixed connection is in the frame, circumference equipartition 3 on the graduated disk vacuum chuck, vertical fixed connection vertical support in the frame, the grinding unit is including being used for carrying out rough machining's first supersound grinding head and the second supersound grinding head that carries out finish machining to the wafer, vertical setting supplies respectively on the vertical support first supersound grinding head with the vertical gliding slide rail of second supersound grinding head, fixed connection drives respectively on the vertical support first supersound grinding head with second supersound grinding head is followed the first cylinder and the second cylinder that feeds that slide rail slip.
6. The ultrasonic thinning apparatus for wafers of claim 5, wherein: and the frame is provided with a shell for protecting the dividing plate.
7. The ultrasonic thinning apparatus for wafers of claim 6, wherein: the automatic wafer loading device is characterized in that a portal frame is fixedly connected to the rack, a horizontal workbench is fixedly connected to the portal frame, and a loading unit used for loading wafers, a positioning unit used for centering and fixing the phase of the wafers and a manipulator used for transferring the wafers are arranged on the horizontal workbench.
8. The ultrasonic thinning apparatus for wafers of claim 7, wherein: the air inlet is provided with a pneumatic rotary joint, one end of the air pipe is communicated with the pneumatic rotary joint in a sealing mode, and the other end of the air pipe is communicated with the vacuumizing machine in a sealing mode.
9. The ultrasonic thinning apparatus for wafers of claim 8, wherein: and a valve body switch for controlling the on-off of the air pipe is arranged on the air pipe.
10. The ultrasonic thinning apparatus for wafers of claim 9, wherein: the plurality of adsorption holes are uniformly distributed on 3 concentric circles, 6 air flow channels are arranged, and the 6 air flow channels are radially and uniformly distributed and are communicated with each other.
CN202211023507.XA 2022-08-25 2022-08-25 Ultrasonic thinning equipment for wafer Active CN115383618B (en)

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