CN115360035A - A preparation method of CuCr50Te contact material with high welding resistance - Google Patents

A preparation method of CuCr50Te contact material with high welding resistance Download PDF

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CN115360035A
CN115360035A CN202210805833.XA CN202210805833A CN115360035A CN 115360035 A CN115360035 A CN 115360035A CN 202210805833 A CN202210805833 A CN 202210805833A CN 115360035 A CN115360035 A CN 115360035A
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powder
cucr50te
copper
contact material
welding resistance
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郭鹏
李鹏
王小军
刘凯
杨斌
张石松
杨晓青
屈晓鹏
吉德胜
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Shaanxi Sirui Advanced Materials Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H11/00Apparatus or processes specially adapted for the manufacture of electric switches
    • H01H11/04Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts
    • H01H11/048Apparatus or processes specially adapted for the manufacture of electric switches of switch contacts by powder-metallurgical processes
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/02Making non-ferrous alloys by melting
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/06Alloys based on chromium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/11Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of chromium or alloys based thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/02Contacts characterised by the material thereof
    • H01H1/0203Contacts characterised by the material thereof specially adapted for vacuum switches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/02Contacts characterised by the material thereof
    • H01H1/0203Contacts characterised by the material thereof specially adapted for vacuum switches
    • H01H1/0206Contacts characterised by the material thereof specially adapted for vacuum switches containing as major components Cu and Cr
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H33/00High-tension or heavy-current switches with arc-extinguishing or arc-preventing means
    • H01H33/60Switches wherein the means for extinguishing or preventing the arc do not include separate means for obtaining or increasing flow of arc-extinguishing fluid
    • H01H33/66Vacuum switches
    • H01H33/664Contacts; Arc-extinguishing means, e.g. arcing rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00Contacts
    • H01H1/02Contacts characterised by the material thereof
    • H01H1/0203Contacts characterised by the material thereof specially adapted for vacuum switches
    • H01H2001/0205Conditioning of the contact material through arcing during manufacturing, e.g. vacuum-depositing of layer on contact surface

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)

Abstract

The invention discloses a preparation method of a CuCr50Te contact material with high fusion welding resistance, which comprises the following steps: weighing and proportioning Cu and Cr according to 1:1 by weight percent, and then weighing and proportioning Te with the weight ratio of the copper-chromium mixture being 0.003-0.6 wt%; preparing a consumable electrode bar by using the weighed raw material powder, and then performing vacuum sintering degassing, arc melting, forging annealing and machining to obtain a CuCr50Te contact material with high fusion welding resistance; the CuCr50Te contact material prepared by the vacuum consumable arc melting technology has good electric and thermal conductivity, reduces the fusion welding force of the CuCr contact, achieves grain refinement and uniform component distribution, reduces the shutoff value of the material, improves the pressure resistance of the material, and improves the current breaking capability; the invention has the advantages of simple overall process, lower process cost and shorter preparation flow.

Description

一种高抗熔焊性CuCr50Te触头材料的制备方法A preparation method of CuCr50Te contact material with high welding resistance

技术领域technical field

本发明涉及铜铬触头制备技术领域,具体涉及一种高抗熔焊性CuCr50Te触 头材料的制备方法。The invention relates to the technical field of copper-chromium contact preparation, in particular to a method for preparing a highly weld-resistant CuCr50Te contact material.

背景技术Background technique

随着真空灭弧室向高电压等级40.5kV、72.5kV甚至更高的126kV、252kV 等级以及小型化发展时,这就要求触头材料在燃弧时具有更高的稳定性,优异的 开断性能,低的截流值,同时还要高的耐电压强度、抗熔焊性,高的导电、导热 和机械强度等性能。With the development of vacuum interrupters to high voltage levels of 40.5kV, 72.5kV or even higher 126kV, 252kV levels and miniaturization, this requires contact materials to have higher stability during arcing and excellent breaking Performance, low cut-off value, but also high withstand voltage strength, anti-welding resistance, high electrical conductivity, thermal conductivity and mechanical strength.

在材料设计时,如通过材料改性减少开断过程中金属蒸汽挥发来提高开断性 能,材料势必会有较大的截流值,会造成过电压,添加低熔点第三元素降低材料 的截流值时,也会降低耐压强度。研究发现某项电接触性能会受到一个或多个材 料参数的影响,而反过来一个材料性能参数又影响几个电性能参数。In material design, if material modification is used to reduce volatilization of metal vapor during the breaking process to improve the breaking performance, the material will inevitably have a large cut-off value, which will cause overvoltage, adding a third element with a low melting point to reduce the cut-off value of the material , will also reduce the compressive strength. It has been found that a certain electrical contact performance is affected by one or more material parameters, and in turn one material property parameter affects several electrical property parameters.

触头的综合性能与电性能的关系复杂又互相关联,而真空开关对触头材料的 要求又十分苛刻,而且提出的要求对触头材料固有的物理性能有些还是矛盾的, 因此对触头材的设计、制造增加了更多的难度。The relationship between the comprehensive performance of the contact and the electrical performance is complex and interrelated, and the requirements for the contact material of the vacuum switch are very strict, and the requirements put forward are somewhat contradictory to the inherent physical properties of the contact material. The design, manufacture of the added more difficulty.

CuCr触头材料添加Te元素基本局限在Cr含量40%以下材料,而高Cr含量 CuCr触头材料具备灭弧能力强的特点,因此,提高Cr含量能够使得CuCr触头 材料具备更优异的发展。现有技术中,针对高Cr含量CuCr触头材料的制备工 艺存在过程较复杂周期长、制备成本较高且制备出的铜铬触头材料显微组织不均 匀的问题。因此,现亟需一种高Cr含量CuCr触头材料的制备工艺。The addition of Te elements to CuCr contact materials is basically limited to materials with Cr content below 40%, while CuCr contact materials with high Cr content have the characteristics of strong arc extinguishing ability. Therefore, increasing the Cr content can make CuCr contact materials have better development. In the prior art, the preparation process for CuCr contact material with high Cr content has the problems of complex process, long period, high preparation cost and non-uniform microstructure of the prepared copper-chromium contact material. Therefore, there is an urgent need for a preparation process of CuCr contact material with high Cr content.

发明内容Contents of the invention

本发明针对现有技术存在的不足,提供了一种高抗熔焊性CuCr50Te触头材 料的制备方法。Aiming at the deficiencies in the prior art, the present invention provides a preparation method of CuCr50Te contact material with high welding resistance.

本发明的设计方案为:一种高抗熔焊性CuCr50Te触头材料的制备方法,包 括:Design scheme of the present invention is: a kind of preparation method of CuCr50Te contact material of high welding resistance, comprising:

S1、配料S1. Ingredients

按重量百分比将Cu、Cr按照1:1进行称量配比,然后再称重配比铜铬混合 料重量比为0.003~0.6wt%的Te;其中,Cu以铜粉的形式加入、Cr以铬粉的形式 加入、Te以碲粉或CuTe合金粉的形式加入;Weigh Cu and Cr according to the ratio of 1:1 by weight percentage, and then weigh Te with a weight ratio of 0.003 to 0.6 wt% of the copper-chromium mixture; wherein, Cu is added in the form of copper powder, and Cr is added in the form of copper powder. Add in the form of chromium powder, Te in the form of tellurium powder or CuTe alloy powder;

S2、自耗电极棒的制备S2. Preparation of Consumable Electrode Rod

S2-1、混料S2-1. Mixing

将称量好的原料粉末装放自动混料机中并通入保护惰性气体混合1~6h,得 到混合均匀的铜铬碲混合粉;Put the weighed raw material powder in an automatic mixer and feed in a protective inert gas to mix for 1-6 hours to obtain a uniformly mixed copper-chromium-tellurium mixed powder;

S2-2、冷等静压压制S2-2, cold isostatic pressing

将混合均匀的铜铬碲混合粉通过自动装粉机填装在模具中,然后置于冷等静 压设备中在压力为80~500Mpa条件下保压5~30min,得到具有一定尺寸的自耗 电极棒;The uniformly mixed copper-chromium-tellurium mixed powder is filled into the mold by the automatic powder filling machine, and then placed in the cold isostatic pressing equipment under the pressure of 80-500Mpa for 5-30min, and the self-consumption with a certain size is obtained. electrode rod;

S3、真空烧结S3, vacuum sintering

将自耗电极棒在真空烧结炉中进行真空烧结脱气;Carry out vacuum sintering and degassing of consumable electrode rods in a vacuum sintering furnace;

S4、电弧熔炼S4, arc melting

将S3真空烧结完成的电极棒在真空自耗电弧熔炼炉内进行熔炼,冷却后得 到铸锭;Smelting the electrode rod completed by S3 vacuum sintering in a vacuum consumable arc melting furnace, and obtaining an ingot after cooling;

S5、锻造退火S5, forging annealing

对S4所述铸锭进行车外圆,锯掉冒口和底片后,进行锻造和退火,得到锻 造好的合金锭;Carry out excircle to the cast ingot described in S4, after sawing off riser and bottom sheet, carry out forging and annealing, obtain the alloy ingot that forges;

S6、机加工S6. Machining

将S5所述合金锭按照图纸要求进行尺寸加工,得到高抗熔焊性CuCr50Te 触头材料。The alloy ingot described in S5 was dimensionally processed according to the requirements of the drawing to obtain a CuCr50Te contact material with high welding resistance.

进一步地,S1所述铜粉采用电解铜粉或雾化铜粉,粉末粒度为30~150μm; 所述雾化铜粉的具体制备工艺为:将电解铜板置于真空感应熔炼炉内进行熔炼, 得到铜熔液;然后利用雾化装置采用氩气为气源在气雾化压力15~20MPa的条 件下进行雾化制粉;其中,所述熔炼具体过程为:对真空感应熔炼炉抽真空至 P≤1Pa时,以10kW/min的速率将功率升至90~100kW,待真空感应熔炼炉内原 料达到均匀后,降功率至35~40kW并同时向炉体内充入高纯氩气使得压力升至 0.1MPa时,停止充入氩气,以20kW/min的速率将功率升至90kW,精炼5min; 保证铜粉原料的纯度>99.7%。Further, the copper powder described in S1 is electrolytic copper powder or atomized copper powder, and the particle size of the powder is 30-150 μm; the specific preparation process of the atomized copper powder is as follows: the electrolytic copper plate is placed in a vacuum induction melting furnace for melting, Obtain the copper melt; then use the atomization device to use argon as the gas source to carry out atomization and pulverization under the condition of the gas atomization pressure of 15-20 MPa; wherein, the specific process of the smelting is: the vacuum induction melting furnace is evacuated to When P≤1Pa, increase the power to 90-100kW at a rate of 10kW/min. After the raw materials in the vacuum induction melting furnace are uniform, reduce the power to 35-40kW and fill the furnace with high-purity argon to increase the pressure. When it reaches 0.1MPa, stop filling argon, increase the power to 90kW at a rate of 20kW/min, and refine for 5min; ensure that the purity of the copper powder raw material is >99.7%.

进一步地,S1所述铬粉为电解铬粉或铝热还原铬粉,粉末粒度为 20~100μm;保证铬粉原料纯度>99.5%。Further, the chromium powder described in S1 is electrolytic chromium powder or thermite-reduced chromium powder, and the particle size of the powder is 20-100 μm; the purity of the raw material of the chromium powder is guaranteed to be >99.5%.

进一步地,S1所述CuTe合金粉采用真空球磨法制备得到,粉末粒度为 50~200μm;所述CuTe合金粉具体制备工艺为:按重量百分比10~15:30~50将碲 粉与铜粉置于行星式球磨机中,按照球料比15~20:1,转速300r/min且以高纯氩 气为保护气体的条件下球磨40~50h;保证碲粉原料纯度≥99.9%。Further, the CuTe alloy powder described in S1 is prepared by vacuum ball milling method, and the particle size of the powder is 50-200 μm; the specific preparation process of the CuTe alloy powder is: put tellurium powder and copper powder in a weight percentage of 10-15:30-50 In the planetary ball mill, according to the ball-to-material ratio of 15-20:1, the speed of rotation is 300r/min, and the high-purity argon is used as the protective gas for ball milling for 40-50 hours; the purity of the tellurium powder raw material is guaranteed to be ≥99.9%.

进一步地,所述S3具体为:将自耗电极棒置于真空烧结炉中,在 500~1080℃条件下保温1~30min。Further, the specific step S3 is: placing the consumable electrode rod in a vacuum sintering furnace, and keeping it warm at 500-1080°C for 1-30 minutes.

进一步地,所述S3具体为:将自耗电极棒置于真空烧结炉中,抽真空后充 入氩气,再次抽真空后以50℃/min的速率升温至450~500℃保温1~2min;然后 以20℃/min的速率升温至800~100℃保温5~10min。Further, the specific step S3 is: placing the consumable electrode rod in a vacuum sintering furnace, filling it with argon after vacuuming, and then raising the temperature to 450-500°C at a rate of 50°C/min and keeping it warm for 1-20°C after vacuumizing again. 2min; then raise the temperature to 800-100℃ at a rate of 20℃/min and keep warm for 5-10min.

进一步地,所述S4具体为:将S3真空烧结完成的电极棒置于真空自耗电 弧熔炼炉内,在熔点电流为1.0~5KA、电弧电压为10~30V条件下进行熔炼,冷 却后得到铸锭;且熔炼过程中短路次数≤3次,环境温湿度要求:温度≤30℃,湿 度≤60%RH。Further, said S4 specifically includes: placing the electrode rods completed in vacuum sintering of S3 in a vacuum consumable arc melting furnace, melting at a melting point current of 1.0-5KA and an arc voltage of 10-30V, and cooling to obtain Ingot casting; and the number of short circuits during the smelting process is ≤3 times, and the environmental temperature and humidity requirements are: temperature ≤30°C, humidity ≤60%RH.

进一步地,所述S5具体为:对S4所述铸锭进行车外圆,锯掉冒口和底片 后,然后在500~1000℃条件下进行锻造,然后在600~1100℃条件下进行退火, 得到锻造好的合金锭。Further, the above-mentioned S5 specifically includes: carrying out the outer circle turning of the ingot described in S4, after sawing off the riser and the bottom sheet, then forging at 500-1000°C, and then annealing at 600-1100°C, Obtain a forged alloy ingot.

进一步地,所述S5进行锻造前需要进行预热处理;所述预热处理具体为: 以30~50℃/min的速率升温至300℃,保温10~15min后再以10~20℃/min的速 率升温至锻造温度。Further, the S5 needs to be preheated before being forged; the preheating specifically includes: heating up to 300°C at a rate of 30-50°C/min, keeping the temperature for 10-15min, and then heating at 10-20°C/min The rate of heating up to the forging temperature.

与现有技术相比,本发明的有益效果:本发明整体工艺设计合理,采用真空 自耗电弧熔炼技术制备的CuCr50Te触头材料,在具备良好的导电、导热性能的 同时,降低了CuCr材料触头的熔焊力,达到晶粒细化和成分均匀分布,降低材 料截流值、改善材料的耐压性能,提升开断电流能力;并且本发明整体工艺简单, 具备工艺成本较低、制备流程较短的优势。Compared with the prior art, the present invention has beneficial effects: the overall process design of the present invention is reasonable, and the CuCr50Te contact material prepared by vacuum consumable arc melting technology has good electrical and thermal conductivity, and reduces the amount of CuCr material. The fusion welding force of the contact can achieve grain refinement and uniform distribution of components, reduce the material interception value, improve the withstand voltage performance of the material, and improve the breaking current capability; and the overall process of the invention is simple, with low process cost and a preparation process advantage of being shorter.

附图说明Description of drawings

图1是本发明的工艺流程图;Fig. 1 is a process flow diagram of the present invention;

图2是实施例7制备的CuCr50Te0.003触头材料的金相图(100×);Fig. 2 is the metallographic diagram (100 *) of the CuCr50Te0.003 contact material prepared by embodiment 7;

图3是实施例8制备的CuCr50Te0.001触头材料的金相图(100×);Fig. 3 is the metallographic diagram (100 *) of the CuCr50Te0.001 contact material prepared by embodiment 8;

图4是实施例9制备的CuCr50Te0.3触头材料的金相图(100×);Fig. 4 is the metallographic diagram (100 *) of the CuCr50Te0.3 contact material prepared by embodiment 9;

图5是实施例10制备的CuCr50Te0.6触头材料的金相图(100×)。Fig. 5 is a metallographic diagram (100×) of the CuCr50Te0.6 contact material prepared in Example 10.

具体实施方式Detailed ways

实施例1Example 1

如图1所示的一种高抗熔焊性CuCr50Te触头材料的制备方法,包括:A kind of preparation method of high welding resistance CuCr50Te contact material as shown in Figure 1, comprises:

S1、配料S1. Ingredients

按重量百分比将Cu、Cr按照1:1进行称量配比,然后再称重配比铜铬混合 料重量比为0.003wt%的Te;其中,Cu以铜粉的形式加入、Cr以铬粉的形式加 入、Te以碲粉或CuTe合金粉的形式加入;铜粉采用电解铜粉,粉末粒度为 30~150μm;铬粉为电解铬粉或铝热还原铬粉,粉末粒度为20~100μm;CuTe合 金粉采用真空球磨法制备得到,粉末粒度为50~200μm;CuTe合金粉具体制备工 艺为:按重量百分比10:30将碲粉与铜粉置于行星式球磨机中,按照球料比 15:1,转速300r/min且以高纯氩气为保护气体的条件下球磨40h;Weigh Cu and Cr according to the ratio of 1:1 by weight percentage, and then weigh Te whose weight ratio of copper-chromium mixture is 0.003wt%; wherein, Cu is added in the form of copper powder, and Cr is added in the form of chromium powder. Te is added in the form of tellurium powder or CuTe alloy powder; the copper powder is electrolytic copper powder, the powder particle size is 30-150 μm; the chromium powder is electrolytic chromium powder or thermite reduced chromium powder, the powder particle size is 20-100 μm; CuTe alloy powder is prepared by vacuum ball milling, and the powder particle size is 50-200 μm; the specific preparation process of CuTe alloy powder is: put tellurium powder and copper powder in a planetary ball mill according to the weight percentage of 10:30, according to the ball-to-material ratio of 15: 1. Ball mill for 40 hours under the condition of rotating speed 300r/min and high-purity argon as protective gas;

S2、自耗电极棒的制备S2. Preparation of Consumable Electrode Rod

S2-1、混料S2-1. Mixing

将称量好的原料粉末装放自动混料机中并通入保护惰性气体混合1h,得到 混合均匀的铜铬碲混合粉;Put the weighed raw material powder in the automatic mixer and pass into the protective inert gas to mix 1h, obtain the mixed copper-chromium-tellurium mixed powder;

S2-2、冷等静压压制S2-2, cold isostatic pressing

将混合均匀的铜铬碲混合粉通过自动装粉机填装在模具中,然后置于冷等静 压设备中在压力为80Mpa条件下保压30min,得到具有一定尺寸的自耗电极棒;The copper-chromium-tellurium mixed powder that mixes uniformly is filled in the mould, is placed in the cold isostatic pressing equipment then and is pressure-holding 30min under the condition of 80Mpa, obtains the self-consumable electrode rod with certain size;

S3、真空烧结S3, vacuum sintering

将自耗电极棒置于真空烧结炉中,在500℃条件下保温30min;Place the consumable electrode rod in a vacuum sintering furnace and keep it warm for 30 minutes at 500°C;

S4、电弧熔炼S4, arc melting

将S3真空烧结完成的电极棒置于真空自耗电弧熔炼炉内,在熔点电流为 1.0KA、电弧电压为10V条件下进行熔炼,冷却后得到铸锭;且熔炼过程中短路 次数≤3次,环境温湿度要求:温度≤30℃,湿度≤60%RH;Place the S3 vacuum sintered electrode rod in a vacuum consumable arc melting furnace, melt it under the conditions of melting point current of 1.0KA and arc voltage of 10V, and obtain an ingot after cooling; and the number of short circuits in the melting process is ≤3 times , Environmental temperature and humidity requirements: temperature ≤ 30 ℃, humidity ≤ 60% RH;

S5、锻造退火S5, forging annealing

对S4铸锭进行车外圆,锯掉冒口和底片后,然后在500℃条件下进行锻造, 然后在600℃条件下进行退火,得到锻造好的合金锭;Carry out outer circle turning on the S4 ingot, saw off the riser and the bottom plate, then forge at 500°C, and then anneal at 600°C to obtain a forged alloy ingot;

S6、机加工S6. Machining

将S5合金锭按照图纸要求进行尺寸加工,得到高抗熔焊性CuCr50Te触头 材料。The S5 alloy ingot is dimensioned according to the requirements of the drawing to obtain a CuCr50Te contact material with high welding resistance.

实施例2Example 2

如图1所示的一种高抗熔焊性CuCr50Te触头材料的制备方法,包括:A kind of preparation method of high welding resistance CuCr50Te contact material as shown in Figure 1, comprises:

S1、配料S1. Ingredients

按重量百分比将Cu、Cr按照1:1进行称量配比,然后再称重配比铜铬混合 料重量比为0.1wt%的Te;其中,Cu以铜粉的形式加入、Cr以铬粉的形式加入、 Te以碲粉或CuTe合金粉的形式加入;铜粉采用电解铜粉,粉末粒度为 30~150μm;铬粉为电解铬粉或铝热还原铬粉,粉末粒度为20~100μm;CuTe合 金粉采用真空球磨法制备得到,粉末粒度为50~200μm;CuTe合金粉具体制备工 艺为:按重量百分比15:50将碲粉与铜粉置于行星式球磨机中,按照球料比 18:1,转速300r/min且以高纯氩气为保护气体的条件下球磨45h;Weigh Cu and Cr according to 1:1 by weight percentage, and then weigh the Te with a weight ratio of 0.1wt% of the copper-chromium mixture; wherein, Cu is added in the form of copper powder, and Cr is added in the form of chromium powder. Te is added in the form of tellurium powder or CuTe alloy powder; copper powder is electrolytic copper powder with a particle size of 30-150 μm; chromium powder is electrolytic chromium powder or aluminothermic reduced chromium powder with a particle size of 20-100 μm; CuTe alloy powder is prepared by vacuum ball milling, and the powder particle size is 50-200 μm; the specific preparation process of CuTe alloy powder is: put tellurium powder and copper powder in a planetary ball mill according to the weight percentage of 15:50, according to the ball-to-material ratio of 18: 1. Ball mill for 45 hours under the condition of rotating speed 300r/min and high-purity argon as protective gas;

S2、自耗电极棒的制备S2. Preparation of Consumable Electrode Rod

S2-1、混料S2-1. Mixing

将称量好的原料粉末装放自动混料机中并通入保护惰性气体混合3h,得到 混合均匀的铜铬碲混合粉;Put the weighed raw material powder in the automatic mixer and pass into the protective inert gas to mix 3h, obtain the mixed copper-chromium-tellurium mixed powder;

S2-2、冷等静压压制S2-2, cold isostatic pressing

将混合均匀的铜铬碲混合粉通过自动装粉机填装在模具中,然后置于冷等静 压设备中在压力为200Mpa条件下保压15min,得到具有一定尺寸的自耗电极棒;The copper-chromium-tellurium mixed powder that mixes is filled in mold by automatic powder filling machine, is placed in the cold isostatic pressing equipment then and is pressure-holding 15min under the condition of 200Mpa, obtains the consumable electrode bar with certain size;

S3、真空烧结S3, vacuum sintering

将自耗电极棒置于真空烧结炉中,在800℃条件下保温10min;Place the consumable electrode rod in a vacuum sintering furnace and keep it warm at 800°C for 10 minutes;

S4、电弧熔炼S4, arc melting

将S3真空烧结完成的电极棒置于真空自耗电弧熔炼炉内,在熔点电流为 3KA、电弧电压为20V条件下进行熔炼,冷却后得到铸锭;且熔炼过程中短路 次数≤3次,环境温湿度要求:温度≤30℃,湿度≤60%RH;Place the S3 vacuum sintered electrode rod in a vacuum consumable arc melting furnace, melt it under the conditions of a melting point current of 3KA and an arc voltage of 20V, and obtain an ingot after cooling; and the number of short circuits during the melting process is ≤3 times, Environmental temperature and humidity requirements: temperature ≤ 30 ℃, humidity ≤ 60% RH;

S5、锻造退火S5, forging annealing

对S4铸锭进行车外圆,锯掉冒口和底片后,然后在900℃条件下进行锻造, 然后在800℃条件下进行退火,得到锻造好的合金锭;Carry out outer circle turning on the S4 ingot, saw off the riser and the bottom plate, then forge at 900°C, and then anneal at 800°C to obtain a forged alloy ingot;

S6、机加工S6. Machining

将S5合金锭按照图纸要求进行尺寸加工,得到高抗熔焊性CuCr50Te触头 材料。The S5 alloy ingot is dimensioned according to the requirements of the drawing to obtain a CuCr50Te contact material with high welding resistance.

实施例3Example 3

如图1所示的一种高抗熔焊性CuCr50Te触头材料的制备方法,包括:A kind of preparation method of high welding resistance CuCr50Te contact material as shown in Figure 1, comprises:

S1、配料S1. Ingredients

按重量百分比将Cu、Cr按照1:1进行称量配比,然后再称重配比铜铬混合 料重量比为0.6wt%的Te;其中,Cu以铜粉的形式加入、Cr以铬粉的形式加入、 Te以碲粉或CuTe合金粉的形式加入;铜粉采用电解铜粉,粉末粒度为150μm; 铬粉为电解铬粉或铝热还原铬粉,粉末粒度为100μm;CuTe合金粉采用真空球 磨法制备得到,粉末粒度为200μm;CuTe合金粉具体制备工艺为:按重量百分 比15:50将碲粉与铜粉置于行星式球磨机中,按照球料比20:1,转速300r/min且 以高纯氩气为保护气体的条件下球磨50h;According to weight percentage, Cu and Cr are weighed according to 1:1 ratio, and then the weight ratio of copper-chromium mixture is weighed to be 0.6wt% Te; wherein, Cu is added in the form of copper powder, and Cr is added in the form of chromium powder. Te is added in the form of tellurium powder or CuTe alloy powder; copper powder is electrolytic copper powder with a particle size of 150 μm; chromium powder is electrolytic chromium powder or aluminothermic reduced chromium powder with a particle size of 100 μm; Prepared by vacuum ball milling method, the powder particle size is 200μm; the specific preparation process of CuTe alloy powder is: put tellurium powder and copper powder in a planetary ball mill according to the weight percentage of 15:50, according to the ball-to-material ratio of 20:1, and the speed is 300r/min And ball milling for 50h under the condition of high-purity argon as protective gas;

S2、自耗电极棒的制备S2. Preparation of Consumable Electrode Rod

S2-1、混料S2-1. Mixing

将称量好的原料粉末装放自动混料机中并通入保护惰性气体混合6h,得到 混合均匀的铜铬碲混合粉;Put the weighed raw material powder in the automatic mixer and pass into the protective inert gas to mix 6h, obtain the mixed copper-chromium-tellurium mixed powder;

S2-2、冷等静压压制S2-2, cold isostatic pressing

将混合均匀的铜铬碲混合粉通过自动装粉机填装在模具中,然后置于冷等静 压设备中在压力为500Mpa条件下保压5min,得到具有一定尺寸的自耗电极棒;The copper-chromium-tellurium mixed powder that mixes is filled in mold by automatic powder filling machine, is placed in the cold isostatic pressing equipment then and is pressure-holding 5min under the condition of 500Mpa, obtains the consumable electrode bar with certain size;

S3、真空烧结S3, vacuum sintering

将自耗电极棒置于真空烧结炉中,在1080℃条件下保温1min;Place the consumable electrode rod in a vacuum sintering furnace and keep it warm at 1080°C for 1 min;

S4、电弧熔炼S4, arc melting

将S3真空烧结完成的电极棒置于真空自耗电弧熔炼炉内,在熔点电流为 5KA、电弧电压为30V条件下进行熔炼,冷却后得到铸锭;且熔炼过程中短路 次数≤3次,环境温湿度要求:温度≤30℃,湿度≤60%RH;Place the S3 vacuum sintered electrode rod in a vacuum consumable arc melting furnace, melt it under the conditions of melting point current of 5KA and arc voltage of 30V, and obtain an ingot after cooling; and the number of short circuits during the melting process is ≤3 times, Environmental temperature and humidity requirements: temperature ≤ 30 ℃, humidity ≤ 60% RH;

S5、锻造退火S5, forging annealing

对S4铸锭进行车外圆,锯掉冒口和底片后,然后在1000℃条件下进行锻造, 然后在1100℃条件下进行退火,得到锻造好的合金锭;Carry out outer circle turning on the S4 ingot, saw off the riser and the negative plate, then forge at 1000°C, and then anneal at 1100°C to obtain a forged alloy ingot;

S6、机加工S6. Machining

将S5合金锭按照图纸要求进行尺寸加工,得到高抗熔焊性CuCr50Te触头 材料。The S5 alloy ingot is dimensioned according to the requirements of the drawing to obtain a CuCr50Te contact material with high welding resistance.

实施例4Example 4

与实施例1不同的是:铜粉采用雾化铜粉,粉末粒度为30~150μm;雾化铜 粉的具体制备工艺为:将电解铜板置于真空感应熔炼炉内进行熔炼,得到铜熔液; 然后利用雾化装置采用氩气为气源在气雾化压力15MPa的条件下进行雾化制粉; 其中,熔炼具体过程为:对真空感应熔炼炉抽真空至P≤1Pa时,以10kW/min 的速率将功率升至90kW,待真空感应熔炼炉内原料达到均匀后,降功率至35kW 并同时向炉体内充入高纯氩气使得压力升至0.1MPa时,停止充入氩气,以 20kW/min的速率将功率升至90kW,精炼5min。The difference from Example 1 is that the copper powder is atomized copper powder, and the particle size of the powder is 30-150 μm; the specific preparation process of the atomized copper powder is as follows: the electrolytic copper plate is placed in a vacuum induction melting furnace for melting to obtain copper melt ; Then use the atomization device to use argon as the gas source to carry out atomization and powder production under the condition of gas atomization pressure 15MPa; wherein, the specific process of smelting is: when the vacuum induction melting furnace is evacuated to P≤1Pa, with 10kW/ Raise the power to 90kW at a rate of min. After the raw materials in the vacuum induction melting furnace are uniform, reduce the power to 35kW and fill the furnace body with high-purity argon gas so that the pressure rises to 0.1MPa. The rate of 20kW/min increases the power to 90kW, refining for 5min.

实施例5Example 5

与实施例2不同的是:铜粉采用雾化铜粉,粉末粒度为30~150μm;雾化铜 粉的具体制备工艺为:将电解铜板置于真空感应熔炼炉内进行熔炼,得到铜熔液; 然后利用雾化装置采用氩气为气源在气雾化压力18MPa的条件下进行雾化制粉; 其中,熔炼具体过程为:对真空感应熔炼炉抽真空至P≤1Pa时,以10kW/min 的速率将功率升至95kW,待真空感应熔炼炉内原料达到均匀后,降功率至40kW 并同时向炉体内充入高纯氩气使得压力升至0.1MPa时,停止充入氩气,以 20kW/min的速率将功率升至90kW,精炼5min。The difference from Example 2 is that the copper powder is atomized copper powder with a particle size of 30-150 μm; the specific preparation process of the atomized copper powder is as follows: the electrolytic copper plate is smelted in a vacuum induction melting furnace to obtain copper melt ; Then use the atomization device to use argon as the gas source to carry out atomization powder production under the condition of gas atomization pressure 18MPa; wherein, the specific process of smelting is: when the vacuum induction melting furnace is evacuated to P≤1Pa, with 10kW/ Raise the power to 95kW at a rate of min. After the raw materials in the vacuum induction melting furnace are uniform, reduce the power to 40kW and fill the furnace with high-purity argon at the same time so that the pressure rises to 0.1MPa. The rate of 20kW/min increases the power to 90kW, refining for 5min.

实施例6Example 6

与实施例3不同的是:铜粉采用雾化铜粉,粉末粒度为30~150μm;雾化铜 粉的具体制备工艺为:将电解铜板置于真空感应熔炼炉内进行熔炼,得到铜熔液; 然后利用雾化装置采用氩气为气源在气雾化压力20MPa的条件下进行雾化制粉; 其中,熔炼具体过程为:对真空感应熔炼炉抽真空至P≤1Pa时,以10kW/min 的速率将功率升至100kW,待真空感应熔炼炉内原料达到均匀后,降功率至 40kW并同时向炉体内充入高纯氩气使得压力升至0.1MPa时,停止充入氩气, 以20kW/min的速率将功率升至90kW,精炼5min。The difference from Example 3 is that the copper powder is atomized copper powder with a particle size of 30-150 μm; the specific preparation process of the atomized copper powder is as follows: the electrolytic copper plate is smelted in a vacuum induction melting furnace to obtain copper melt ; Then use the atomization device to use argon as the gas source to atomize and make powder under the condition of gas atomization pressure 20MPa; wherein, the specific process of smelting is: when the vacuum induction melting furnace is evacuated to P≤1Pa, with 10kW/ Raise the power to 100kW at a rate of min. After the raw materials in the vacuum induction melting furnace are uniform, reduce the power to 40kW and fill the furnace with high-purity argon at the same time so that the pressure rises to 0.1MPa. Stop filling the argon to The rate of 20kW/min increases the power to 90kW, refining for 5min.

实施例7Example 7

一种高抗熔焊性CuCr50Te触头材料的制备方法,包括:A preparation method of a highly weld-resistant CuCr50Te contact material, comprising:

S1、配料S1. Ingredients

按重量百分比将Cu、Cr按照1:1进行称量配比,然后再称重配比铜铬混合 料重量比为0.003wt%的Te;其中,Cu以铜粉的形式加入、Cr以铬粉的形式加 入、Te以碲粉或CuTe合金粉的形式加入;铜粉采用雾化铜粉,粉末粒度为 30~150μm;铬粉为电解铬粉或铝热还原铬粉,粉末粒度为20~100μm;CuTe合 金粉采用真空球磨法制备得到,粉末粒度为50~200μm;CuTe合金粉具体制备工 艺为:按重量百分比10:30将碲粉与铜粉置于行星式球磨机中,按照球料比15:1,转速300r/min且以高纯氩气为保护气体的条件下球磨40h;Weigh Cu and Cr according to the ratio of 1:1 by weight percentage, and then weigh Te whose weight ratio of copper-chromium mixture is 0.003wt%; wherein, Cu is added in the form of copper powder, and Cr is added in the form of chromium powder. Te is added in the form of tellurium powder or CuTe alloy powder; the copper powder is atomized copper powder, the powder particle size is 30-150 μm; the chromium powder is electrolytic chromium powder or thermite reduced chromium powder, the powder particle size is 20-100 μm ; CuTe alloy powder is prepared by vacuum ball milling method, and the powder particle size is 50-200 μm; the specific preparation process of CuTe alloy powder is: put tellurium powder and copper powder in a planetary ball mill according to the weight percentage of 10:30, according to the ball-to-material ratio of 15 : 1, ball milling 40h under the condition of rotating speed 300r/min and high-purity argon as protective gas;

其中,雾化铜粉的具体制备工艺为:将电解铜板置于真空感应熔炼炉内进行 熔炼,得到铜熔液;然后利用雾化装置采用氩气为气源在气雾化压力15MPa的 条件下进行雾化制粉;Among them, the specific preparation process of atomized copper powder is as follows: the electrolytic copper plate is placed in a vacuum induction melting furnace for melting to obtain copper melt; Carry out atomization powder;

熔炼具体过程为:对真空感应熔炼炉抽真空至P≤1Pa时,以10kW/min的 速率将功率升至90kW,待真空感应熔炼炉内原料达到均匀后,降功率至35kW 并同时向炉体内充入高纯氩气使得压力升至0.1MPa时,停止充入氩气,以 20kW/min的速率将功率升至90kW,精炼5min;The specific process of smelting is: when the vacuum induction melting furnace is evacuated to P≤1Pa, the power is increased to 90kW at a rate of 10kW/min. Fill high-purity argon to make the pressure rise to 0.1MPa, stop filling argon, increase the power to 90kW at a rate of 20kW/min, and refine for 5min;

S2、自耗电极棒的制备S2. Preparation of Consumable Electrode Rod

S2-1、混料S2-1. Mixing

将称量好的原料粉末装放自动混料机中并通入保护惰性气体混合1h,得到 混合均匀的铜铬碲混合粉;Put the weighed raw material powder in the automatic mixer and pass into the protective inert gas to mix 1h, obtain the mixed copper-chromium-tellurium mixed powder;

S2-2、冷等静压压制S2-2, cold isostatic pressing

将混合均匀的铜铬碲混合粉通过自动装粉机填装在模具中,然后置于冷等静 压设备中在压力为80Mpa条件下保压5min,得到具有一定尺寸的自耗电极棒;The copper-chromium-tellurium mixed powder that mixes uniformly is filled in the mould, is placed in the cold isostatic pressing equipment then and is pressure-holding 5min under the condition of 80Mpa, obtains the self-consumable electrode rod with certain size;

S3、真空烧结S3, vacuum sintering

将自耗电极棒置于真空烧结炉中,抽真空后充入氩气,再次抽真空后以 50℃/min的速率升温至450℃保温2min;然后以20℃/min的速率升温至800℃ 保温10min;Place the consumable electrode rod in a vacuum sintering furnace, fill it with argon after vacuuming, and then raise the temperature to 450°C at a rate of 50°C/min and keep it for 2 minutes; then raise the temperature to 800°C at a rate of 20°C/min ℃ keep warm for 10min;

S4、电弧熔炼S4, arc melting

将S3真空烧结完成的电极棒置于真空自耗电弧熔炼炉内,在熔点电流为 1KA、电弧电压为10V条件下进行熔炼,冷却后得到铸锭;且熔炼过程中短路 次数≤3次,环境温湿度要求:温度≤30℃,湿度≤60%RH;Put the S3 vacuum sintered electrode rod in a vacuum consumable arc melting furnace, melt it under the conditions of melting point current of 1KA and arc voltage of 10V, and obtain an ingot after cooling; and the number of short circuits during the melting process is ≤3 times, Environmental temperature and humidity requirements: temperature ≤ 30 ℃, humidity ≤ 60% RH;

S5、锻造退火S5, forging annealing

对S4铸锭进行车外圆,锯掉冒口和底片后,进行与热处理;然后在500℃ 条件下进行锻造,然后在600℃条件下进行退火,得到锻造好的合金锭;其中, 预热处理具体为:以30℃/min的速率升温至300℃,保温10min后再以10℃/min 的速率升温至锻造温度;Carry out outer circle turning on the S4 ingot, saw off the riser and the negative plate, and heat treatment; then forge at 500°C, and then anneal at 600°C to obtain a forged alloy ingot; among them, preheating The specific treatment is: raise the temperature to 300°C at a rate of 30°C/min, hold the temperature for 10 minutes, and then raise the temperature to the forging temperature at a rate of 10°C/min;

S6、机加工S6. Machining

将S5合金锭按照图纸要求进行尺寸加工,得到高抗熔焊性CuCr50Te触头 材料。The S5 alloy ingot is dimensioned according to the requirements of the drawing to obtain a CuCr50Te contact material with high welding resistance.

实施例8Example 8

与实施例7不同的是:按重量百分比将Cu、Cr按照1:1进行称量配比,然 后再称重配比铜铬混合料重量比为0.01wt%的Te。The difference from Example 7 is that Cu and Cr are weighed and proportioned according to 1:1 by weight percentage, and then Te with a weight ratio of copper-chromium mixture of 0.01wt% is weighed.

实施例9Example 9

一种高抗熔焊性CuCr50Te触头材料的制备方法,包括:A preparation method of a highly weld-resistant CuCr50Te contact material, comprising:

S1、配料S1. Ingredients

按重量百分比将Cu、Cr按照1:1进行称量配比,然后再称重配比铜铬混合 料重量比为0.3wt%的Te;其中,Cu以铜粉的形式加入、Cr以铬粉的形式加入、 Te以碲粉或CuTe合金粉的形式加入;铜粉采用雾化铜粉,粉末粒度为 30~150μm;铬粉为电解铬粉或铝热还原铬粉,粉末粒度为20~100μm;CuTe合 金粉采用真空球磨法制备得到,粉末粒度为50~200μm;CuTe合金粉具体制备工 艺为:按重量百分比15:40将碲粉与铜粉置于行星式球磨机中,按照球料比 18:1,转速300r/min且以高纯氩气为保护气体的条件下球磨45h;Cu and Cr are weighed and proportioned according to 1:1 by weight percentage, and then Te is weighed with a copper-chromium mixture weight ratio of 0.3wt%; wherein, Cu is added in the form of copper powder, and Cr is added in the form of chromium powder. Te is added in the form of tellurium powder or CuTe alloy powder; the copper powder is atomized copper powder, the powder particle size is 30-150 μm; the chromium powder is electrolytic chromium powder or thermite reduced chromium powder, the powder particle size is 20-100 μm ; CuTe alloy powder is prepared by vacuum ball milling method, and the powder particle size is 50-200 μm; the specific preparation process of CuTe alloy powder is: put tellurium powder and copper powder in a planetary ball mill according to the weight percentage of 15:40, according to the ball-to-material ratio of 18 : 1, ball milling 45h under the condition of 300r/min rotating speed and high-purity argon as protective gas;

其中,雾化铜粉的具体制备工艺为:将电解铜板置于真空感应熔炼炉内进行 熔炼,得到铜熔液;然后利用雾化装置采用氩气为气源在气雾化压力18MPa的 条件下进行雾化制粉;Among them, the specific preparation process of atomized copper powder is as follows: the electrolytic copper plate is placed in a vacuum induction melting furnace for melting to obtain copper melt; Carry out atomization powder;

熔炼具体过程为:对真空感应熔炼炉抽真空至P≤1Pa时,以10kW/min的 速率将功率升至95kW,待真空感应熔炼炉内原料达到均匀后,降功率至40kW 并同时向炉体内充入高纯氩气使得压力升至0.1MPa时,停止充入氩气,以 20kW/min的速率将功率升至90kW,精炼5min;The specific process of smelting is: when the vacuum induction melting furnace is evacuated to P≤1Pa, the power is increased to 95kW at a rate of 10kW/min. Fill high-purity argon to make the pressure rise to 0.1MPa, stop filling argon, increase the power to 90kW at a rate of 20kW/min, and refine for 5min;

S2、自耗电极棒的制备S2. Preparation of Consumable Electrode Rod

S2-1、混料S2-1. Mixing

将称量好的原料粉末装放自动混料机中并通入保护惰性气体混合5h,得到 混合均匀的铜铬碲混合粉;Put the weighed raw material powder in the automatic mixer and pass into the protective inert gas to mix 5h, obtain the mixed copper-chromium-tellurium mixed powder;

S2-2、冷等静压压制S2-2, cold isostatic pressing

将混合均匀的铜铬碲混合粉通过自动装粉机填装在模具中,然后置于冷等静 压设备中在压力为300Mpa条件下保压20min,得到具有一定尺寸的自耗电极棒;The mixed copper-chromium-tellurium mixed powder is filled in the mould, then placed in the cold isostatic pressing equipment, and the pressure is maintained at 300Mpa for 20min to obtain a self-consumable electrode rod with a certain size;

S3、真空烧结S3, vacuum sintering

将自耗电极棒置于真空烧结炉中,抽真空后充入氩气,再次抽真空后以 50℃/min的速率升温至500℃保温1min;然后以20℃/min的速率升温至100℃ 保温5min;Place the consumable electrode rod in a vacuum sintering furnace, fill it with argon after vacuuming, and then raise the temperature to 500°C at a rate of 50°C/min and keep it for 1min; then raise the temperature to 100°C at a rate of 20°C/min ℃ keep warm for 5min;

S4、电弧熔炼S4, arc melting

将S3真空烧结完成的电极棒置于真空自耗电弧熔炼炉内,在熔点电流为 3KA、电弧电压为25V条件下进行熔炼,冷却后得到铸锭;且熔炼过程中短路 次数≤3次,环境温湿度要求:温度≤30℃,湿度≤60%RH;Place the S3 vacuum sintered electrode rod in a vacuum consumable arc melting furnace, melt it under the conditions of melting point current of 3KA and arc voltage of 25V, and obtain an ingot after cooling; and the number of short circuits in the melting process is ≤3 times, Environmental temperature and humidity requirements: temperature ≤ 30 ℃, humidity ≤ 60% RH;

S5、锻造退火S5, forging annealing

对S4铸锭进行车外圆,锯掉冒口和底片后,进行与热处理;然后在950℃ 条件下进行锻造,然后在650℃条件下进行退火,得到锻造好的合金锭;其中, 预热处理具体为:以30℃/min的速率升温至300℃,保温15min后再以20℃/min 的速率升温至锻造温度;Carry out the outer circle of the S4 ingot, saw off the riser and the negative plate, and heat treatment; then forge at 950°C, and then anneal at 650°C to obtain a forged alloy ingot; among them, preheating The specific treatment is: raise the temperature to 300°C at a rate of 30°C/min, hold for 15 minutes, and then raise the temperature to the forging temperature at a rate of 20°C/min;

S6、机加工S6. Machining

将S5合金锭按照图纸要求进行尺寸加工,得到高抗熔焊性CuCr50Te触头 材料。The S5 alloy ingot is dimensioned according to the requirements of the drawing to obtain a CuCr50Te contact material with high welding resistance.

实施例10Example 10

一种高抗熔焊性CuCr50Te触头材料的制备方法,包括:A preparation method of a highly weld-resistant CuCr50Te contact material, comprising:

S1、配料S1. Ingredients

按重量百分比将Cu、Cr按照1:1进行称量配比,然后再称重配比铜铬混合 料重量比为0.6wt%的Te;其中,Cu以铜粉的形式加入、Cr以铬粉的形式加入、 Te以碲粉或CuTe合金粉的形式加入;铜粉采用雾化铜粉,粉末粒度为 30~150μm;铬粉为电解铬粉或铝热还原铬粉,粉末粒度为20~100μm;CuTe合 金粉采用真空球磨法制备得到,粉末粒度为50~200μm;CuTe合金粉具体制备工 艺为:按重量百分比15:50将碲粉与铜粉置于行星式球磨机中,按照球料比 20:1,转速300r/min且以高纯氩气为保护气体的条件下球磨50h;According to weight percentage, Cu and Cr are weighed according to 1:1 ratio, and then the weight ratio of copper-chromium mixture is weighed to be 0.6wt% Te; wherein, Cu is added in the form of copper powder, and Cr is added in the form of chromium powder. Te is added in the form of tellurium powder or CuTe alloy powder; the copper powder is atomized copper powder, the powder particle size is 30-150 μm; the chromium powder is electrolytic chromium powder or thermite reduced chromium powder, the powder particle size is 20-100 μm ; CuTe alloy powder is prepared by vacuum ball milling method, and the powder particle size is 50-200 μm; the specific preparation process of CuTe alloy powder is: put tellurium powder and copper powder in a planetary ball mill according to the weight percentage of 15:50, according to the ball-to-material ratio of 20 : 1, ball milling 50h under the condition of rotating speed 300r/min and high-purity argon as protective gas;

其中,雾化铜粉的具体制备工艺为:将电解铜板置于真空感应熔炼炉内进行 熔炼,得到铜熔液;然后利用雾化装置采用氩气为气源在气雾化压力20MPa的 条件下进行雾化制粉;Among them, the specific preparation process of the atomized copper powder is as follows: the electrolytic copper plate is placed in a vacuum induction melting furnace for melting to obtain a copper melt; Carry out atomization powder;

熔炼具体过程为:对真空感应熔炼炉抽真空至P≤1Pa时,以10kW/min的 速率将功率升至100kW,待真空感应熔炼炉内原料达到均匀后,降功率至40kW 并同时向炉体内充入高纯氩气使得压力升至0.1MPa时,停止充入氩气,以 20kW/min的速率将功率升至90kW,精炼5min;The specific process of smelting is: when the vacuum induction melting furnace is evacuated to P≤1Pa, the power is increased to 100kW at a rate of 10kW/min, and after the raw materials in the vacuum induction melting furnace are uniform, the power is reduced to 40kW and the Fill high-purity argon to make the pressure rise to 0.1MPa, stop filling argon, increase the power to 90kW at a rate of 20kW/min, and refine for 5min;

S2、自耗电极棒的制备S2. Preparation of Consumable Electrode Rod

S2-1、混料S2-1. Mixing

将称量好的原料粉末装放自动混料机中并通入保护惰性气体混合1~6h,得 到混合均匀的铜铬碲混合粉;Put the weighed raw material powder in an automatic mixer and feed in a protective inert gas to mix for 1-6 hours to obtain a uniformly mixed copper-chromium-tellurium mixed powder;

S2-2、冷等静压压制S2-2, cold isostatic pressing

将混合均匀的铜铬碲混合粉通过自动装粉机填装在模具中,然后置于冷等静 压设备中在压力为500Mpa条件下保压5min,得到具有一定尺寸的自耗电极棒;The copper-chromium-tellurium mixed powder that mixes is filled in mold by automatic powder filling machine, is placed in the cold isostatic pressing equipment then and is pressure-holding 5min under the condition of 500Mpa, obtains the consumable electrode bar with certain size;

S3、真空烧结S3, vacuum sintering

将自耗电极棒置于真空烧结炉中,抽真空后充入氩气,再次抽真空后以 50℃/min的速率升温至500℃保温2min;然后以20℃/min的速率升温至100℃ 保温10min;Place the consumable electrode rod in a vacuum sintering furnace, fill it with argon gas after vacuuming, and then raise the temperature to 500°C at a rate of 50°C/min and keep it for 2 minutes; then raise the temperature to 100°C at a rate of 20°C/min ℃ keep warm for 10min;

S4、电弧熔炼S4, arc melting

将S3真空烧结完成的电极棒置于真空自耗电弧熔炼炉内,在熔点电流为 5KA、电弧电压为30V条件下进行熔炼,冷却后得到铸锭;且熔炼过程中短路 次数≤3次,环境温湿度要求:温度≤30℃,湿度≤60%RH;Place the S3 vacuum sintered electrode rod in a vacuum consumable arc melting furnace, melt it under the conditions of melting point current of 5KA and arc voltage of 30V, and obtain an ingot after cooling; and the number of short circuits during the melting process is ≤3 times, Environmental temperature and humidity requirements: temperature ≤ 30 ℃, humidity ≤ 60% RH;

S5、锻造退火S5, forging annealing

对S4铸锭进行车外圆,锯掉冒口和底片后,进行与热处理;然后在1000℃ 条件下进行锻造,然后在1100℃条件下进行退火,得到锻造好的合金锭;其中, 预热处理具体为:以50℃/min的速率升温至300℃,保温15min后再以20℃/min 的速率升温至锻造温度;Carry out the outer circle of the S4 ingot, saw off the riser and the bottom, and heat treatment; then forge at 1000 ° C, and then anneal at 1100 ° C to obtain a forged alloy ingot; among them, preheating The specific treatment is: raise the temperature to 300°C at a rate of 50°C/min, hold for 15 minutes, and then raise the temperature to the forging temperature at a rate of 20°C/min;

S6、机加工S6. Machining

将S5合金锭按照图纸要求进行尺寸加工,得到高抗熔焊性CuCr50Te触头 材料。The S5 alloy ingot is dimensioned according to the requirements of the drawing to obtain a CuCr50Te contact material with high welding resistance.

试验例Test case

对实施例1~10制备所得的CuCr50Te触头材料进行理化性质检测,具体检 测结果如表1所示;并对实施例7~10制备的CuCr50Te触头材料在进行显微组 织观察,得到如图2~5的金相图示;The physical and chemical properties of the CuCr50Te contact materials prepared in Examples 1 to 10 were tested for their physical and chemical properties, and the specific test results are shown in Table 1; and the microstructure of the CuCr50Te contact materials prepared in Examples 7 to 10 was observed, and the results were obtained as shown in Fig. Metallographic diagrams from 2 to 5;

表1:实施例1~10制备所得的CuCr50Te触头材料理化性质检测结果Table 1: Test results of physical and chemical properties of CuCr50Te contact materials prepared in Examples 1-10

Figure BDA0003737466960000151
Figure BDA0003737466960000151

Figure BDA0003737466960000161
Figure BDA0003737466960000161

结论:本发明实施例1~10所制备得到的CuCr50Te触头材料均具备良好的 导电、导热性能,且材料的抗压强度性能较佳。Conclusion: The CuCr50Te contact materials prepared in Examples 1 to 10 of the present invention all have good electrical and thermal conductivity, and the compressive strength of the material is better.

Claims (10)

1. A preparation method of a CuCr50Te contact material with high fusion welding resistance is characterized by comprising the following steps:
s1, preparing materials
Weighing and proportioning Cu and Cr according to 1:1 by weight percent, and then weighing and proportioning Te with the weight ratio of the copper-chromium mixture being 0.003-0.6 wt%; wherein Cu is added in the form of copper powder, cr is added in the form of chromium powder, and Te is added in the form of tellurium powder or CuTe alloy powder;
s2, preparation of consumable electrode bar
S2-1, mixing materials
Putting the weighed raw material powder into an automatic mixer, introducing protective inert gas, and mixing for 1-6 h to obtain uniformly mixed copper-chromium-tellurium mixed powder;
s2-2, cold isostatic pressing
Filling the uniformly mixed copper-chromium-tellurium mixed powder into a die through an automatic powder filling machine, and then placing the die into a cold isostatic pressing device, and maintaining the pressure for 5-30 min under the condition that the pressure is 80-500 Mpa to obtain a consumable electrode rod with a certain size;
s3, vacuum sintering
Carrying out vacuum sintering degassing on the consumable electrode rod in a vacuum sintering furnace;
s4, arc melting
Smelting the electrode rod subjected to vacuum sintering in the S3 in a vacuum consumable arc smelting furnace, and cooling to obtain an ingot;
s5, forging and annealing
Turning the outer circle of the cast ingot of the step S4, sawing off a riser and a bottom sheet, and then forging and annealing to obtain a forged alloy ingot;
s6, machining
And (5) carrying out size processing on the alloy ingot in the step S5 according to the drawing requirements to obtain the CuCr50Te contact material with high fusion welding resistance.
2. The method for preparing the CuCr50Te contact material with high fusion welding resistance according to claim 1, wherein electrolytic copper powder or atomized copper powder is adopted as the copper powder in S1, and the powder granularity is 30-150 μm; the specific preparation process of the atomized copper powder comprises the following steps: placing the electrolytic copper plate in a vacuum induction smelting furnace for smelting to obtain molten copper; then, atomizing by using an atomizing device and adopting argon as a gas source under the condition of gas atomization pressure of 15-20 MPa to prepare powder; the smelting process comprises the following specific steps: and vacuumizing the vacuum induction smelting furnace until P is less than or equal to 1Pa, increasing the power to 90-100 kW at the speed of 10kW/min, reducing the power to 35-40 kW after the raw materials in the vacuum induction smelting furnace are uniform, simultaneously filling high-purity argon into the furnace body to increase the pressure to 0.1MPa, stopping filling the argon, increasing the power to 90kW at the speed of 20kW/min, and refining for 5min.
3. The method for preparing the CuCr50Te contact material with high fusion welding resistance according to claim 1, wherein the chromium powder in S1 is electrolytic chromium powder or aluminothermic chromium powder, and the powder granularity is 20-100 μm.
4. The method for preparing a CuCr50Te contact material with high fusion welding resistance according to claim 1, wherein the CuTe alloy powder of S1 is prepared by a vacuum ball milling method, and the particle size of the powder is 50-200 μm; the specific preparation process of the CuTe alloy powder comprises the following steps: placing tellurium powder and copper powder into a planetary ball mill according to the weight percentage of 10-15 to 30-50, and ball milling for 40-50 hours under the conditions that the ball-material ratio is 15-20, the rotating speed is 300r/min and high-purity argon is used as protective gas.
5. The method for preparing the CuCr50Te contact material with high fusion welding resistance according to claim 1, wherein S3 specifically comprises the following steps: and (3) placing the consumable electrode bar in a vacuum sintering furnace, and preserving the heat for 1-30 min at the temperature of 500-1080 ℃.
6. The method for preparing the CuCr50Te contact material with high fusion welding resistance according to claim 1, wherein S3 specifically comprises the following steps: placing the consumable electrode bar in a vacuum sintering furnace, vacuumizing, filling argon, vacuumizing again, heating to 450-500 ℃ at the speed of 50 ℃/min, and keeping the temperature for 1-2 min; then raising the temperature to 800-100 ℃ at the speed of 20 ℃/min and preserving the temperature for 5-10 min.
7. The method for preparing the CuCr50Te contact material with high fusion welding resistance according to claim 1, wherein S4 specifically comprises the following steps: placing the electrode bar subjected to vacuum sintering in the S3 into a vacuum consumable arc melting furnace, melting under the conditions that the melting point current is 1.0-5 KA and the arc voltage is 10-30V, and cooling to obtain an ingot; and the short circuit frequency in the smelting process is less than or equal to 3 times, and the environmental temperature and humidity requirements are as follows: temperature is less than or equal to 30 ℃, humidity is less than or equal to 60 percent RH.
8. The method for preparing the CuCr50Te contact material with high fusion welding resistance according to claim 1, wherein S5 specifically comprises the following steps: and (5) turning the outer circle of the ingot casting in the step (S4), sawing off a riser and a bottom sheet, forging at the temperature of 500-1000 ℃, and annealing at the temperature of 600-1100 ℃ to obtain a forged alloy ingot.
9. The method for preparing CuCr50Te contact material with high fusion welding resistance according to claim 8, wherein the step S5 is performed by preheating treatment before forging; the preheating treatment specifically comprises the following steps: heating to 300 ℃ at the speed of 30-50 ℃/min, preserving the heat for 10-15 min, and then heating to the forging temperature at the speed of 10-20 ℃/min.
10. The method for preparing the CuCr50Te contact material with high fusion welding resistance according to claim 1, wherein S5 specifically comprises the following steps: and (4) turning the outer circle of the ingot casting in the step (S4), sawing off a riser and a bottom sheet, heating to 300 ℃ at the speed of 30-50 ℃/min, preserving heat for 10-15 min, then heating to 500-1000 ℃ at the speed of 10-20 ℃/min, forging, and then annealing at the temperature of 600-1100 ℃ to obtain the forged alloy ingot.
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CN113462913A (en) * 2021-06-15 2021-10-01 陕西斯瑞新材料股份有限公司 Short circuit control method for molten drops in vacuum consumable arc melting

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115838875A (en) * 2022-11-23 2023-03-24 陕西斯瑞新材料股份有限公司 Preparation method suitable for high-voltage-grade large-size contact material
CN116083739A (en) * 2022-12-08 2023-05-09 陕西斯瑞新材料股份有限公司 Preparation method of high-purity low-pressure environment-friendly copper-chromium contact
CN116005020B (en) * 2022-12-26 2024-03-26 陕西斯瑞新材料股份有限公司 Preparation method of CuTe contact material for high-voltage direct-current contactor
CN117816952A (en) * 2023-12-27 2024-04-05 陕西斯瑞新材料股份有限公司 Preparation method of CuCrNb material for high voltage level
CN119076970A (en) * 2024-08-20 2024-12-06 陕西豪特创新材料有限公司 A gradient composite material and preparation method thereof

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