CN115351377A - Nano-copper sintering method based on self-propagating film - Google Patents
Nano-copper sintering method based on self-propagating film Download PDFInfo
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- CN115351377A CN115351377A CN202211276146.XA CN202211276146A CN115351377A CN 115351377 A CN115351377 A CN 115351377A CN 202211276146 A CN202211276146 A CN 202211276146A CN 115351377 A CN115351377 A CN 115351377A
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- nano
- copper
- self
- propagating
- soldering paste
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 125
- 239000010949 copper Substances 0.000 title claims abstract description 125
- 238000005245 sintering Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000005476 soldering Methods 0.000 claims abstract description 60
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000001816 cooling Methods 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 38
- 238000004321 preservation Methods 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 26
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims 1
- 238000011534 incubation Methods 0.000 claims 1
- 238000002791 soaking Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/08—Auxiliary devices therefor
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
The application provides a nano-copper sintering method based on a self-propagating film, holes are dug in a nickel-aluminum film according to a preset interval, then nano-copper soldering paste is injected into each dug hole through a dispenser, so that a single nano-copper soldering paste and nickel-aluminum film assembly is obtained, a self-propagating nano-copper sintering structure is preheated and insulated firstly, then secondary heating and secondary insulation are continuously carried out, and finally cooling is carried out to room temperature, so that sintering is completed. According to the technical scheme, the sintering time can be greatly shortened, the time cost is greatly saved, and the equipment cost is greatly saved.
Description
Technical Field
The application relates to the technical field of electronic packaging, in particular to a nano-copper sintering method based on a self-propagating film.
Background
In recent years, with the emergence of the third-generation semiconductor materials of silicon carbide and gallium nitride, the power level of power devices is greatly increased, higher power levels bring larger switching loss and conduction loss, the original common solder has a lower melting point than the silicon carbide material and low thermal conductivity, and the performance of the third-generation power chip cannot be fully exerted, so that new solders are needed. The nano copper sintering technology is produced, but the current nano copper sintering generally needs at least 3 hours at the sintering temperature of 300 ℃, and the 300 ℃ does not actually reach the melting point of copper, so the purpose of connecting a substrate and a chip is achieved through the diffusion of copper. And in order to secure the bonding strength, it is generally pressure sintering, and the required pressure is large, so that the bonding strength is rapidly decreased when the size of the chip exceeds 5mm by 5 mm.
The existing sintering technology of nano-copper usually adopts a reflow soldering mode, firstly heats the furnace temperature to 200 ℃, preheats the nano-copper soldering paste, and introduces nitrogen-hydrogen mixed gas to prevent the oxidation of copper in the sintering process. Then heated to 300 c and held there for at least 3 hours. In the prior art, the time required by the existing nano copper sintering technology is more than 3 hours, the cost is high, the efficiency is low, and the method is not suitable for large-scale industrial production. The existing nano copper sintering technology has requirements on the size of a chip, the maximum size cannot exceed 5mm to 5mm, and otherwise, the connection strength cannot meet the application requirements. The existing nano copper solder has strict requirements on the particle size of nano copper, and the maximum particle size of the required nano copper cannot exceed 300nm. The nano copper particles are easy to be oxidized, and the sintering time is generally more than 3 hours, so the sintering atmosphere must be in hydrogen, which puts higher requirements on sintering equipment and increases the sintering cost. At present, the pressure required by the nano copper sintering technology is generally large, the chip is easily damaged due to uneven pressurization, and a special clamp is required due to overhigh pressure, so that the complexity of the process is increased, and the cost is also increased. In addition, the traditional nano-film sandwich sintered structure has low connection strength and poor long-term reliability because the middle of the structure is a product after film combustion and the upper layer and the lower layer are soldering paste.
Disclosure of Invention
The application provides a nano copper sintering method based on a self-propagating film. The method adopts a multilayer mosaic structure of nano copper, nickel aluminum films and nano copper, so that the required sintering time is shortened to one half of the original sintering time by 20 to 30 times, and the time cost is greatly saved. The technical scheme is as follows:
a nano copper sintering method based on a self-propagating film comprises the following steps:
step 1, digging holes in the nickel-aluminum film according to a preset interval, and then injecting nano-copper soldering paste into each dug hole by using a dispenser to obtain a single assembly of the nano-copper soldering paste and the nickel-aluminum film;
step 3, heating and insulating the self-propagating nano-copper sintering structure for the first time, and ensuring the temperature of the clamp and the temperature of the self-propagating nano-copper sintering structure to be consistent; and continuously carrying out second heating and second heat preservation, and completing sintering after cooling to room temperature.
Further, in step 1, the hole digging is performed on the nickel-aluminum thin film, and the hole digging method includes: using laser to dig holes on the nickel-aluminum film, wherein the diameter of each hole is between 0.4mm and 0.6mm, and the nano copper soldering paste in the assembly is round; in step 2, the area of the second nano copper soldering paste is 80 to 90 percent of the area of the chip, and the thickness of the second nano copper soldering paste is 10 to 20 mu m.
Further, in step 3, the first heating and the first heat preservation of the self-propagating nano-copper sintered structure are performed, and the method includes: heating the self-propagating nano-copper sintering structure to 100-120 ℃ for 60-90 s, and then carrying out heat preservation for 120-180 s.
Further, the first heating and the first heat preservation excite the activation of the first nano-copper soldering paste and the second nano-copper soldering paste, and the soldering flux in the nano-copper soldering pastes is removed.
Further, in step 3, the performing of the second heating and the second heat preservation includes: heating the self-propagating nano copper sintering structure to 240-260 ℃ for 120-180 s, and then preserving heat for 300-420 s.
Further, in the second heating and the second heat preservation, the nickel aluminum thin film has reached the reaction temperature, and the first nano-copper solder paste and the second nano-copper solder paste are melted by the heat released by the reaction.
Further, in step 3, cooling for 120s to 180s to cool the self-propagating nano-copper sintered structure to room temperature.
Further, in the first heating stage, the self-propagating nano copper sintering structure is heated to 100 ℃ for 60s; in the first heat preservation stage, the heat preservation time is 120s.
Further, in the second heating stage, the self-propagating nano copper sintering structure is heated from 100 ℃ to 250 ℃ for 120s; in the second heat preservation stage, the heat preservation time is 300s.
Further, in the cooling stage, the cooling time was 120s.
Through the embodiment of the application, the following technical effects can be obtained: the sintering time can be greatly accelerated, and the time cost is greatly saved; also, with the above arrangement, since the solder pastes of the upper and lower layers are connected through the solder paste in the via holes, the connection strength is greater. The heat conductivity is higher, the heat dissipation requirement is lower, and the expenditure of heat dissipation equipment can be reduced; the pressure required by the self-propagating nano copper sintering structure can be greatly reduced, so that the design and manufacturing difficulty of a clamp for applying pressure to a chip can be effectively reduced, and the equipment cost is greatly saved; in addition, with the above-described scheme, the size requirement for the chip is reduced, and when the chip exceeds 5mm by 5mm, for example, when the chip reaches 10mm by 10mm, the chip still has high connection strength.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to the drawings without inventive labor.
FIG. 1 is a flow chart of a nano-copper sintering method;
FIG. 2 is a top view of a nano-copper printing and nickel-aluminum thin film;
FIG. 3 is a schematic structural diagram of a self-propagating nano-copper sintered structure;
FIG. 4 is a schematic view of a sintering curve.
Reference numerals:
1. the chip comprises a substrate, 2 first nano-copper soldering paste, 3 nickel-aluminum thin films, 4 second nano-copper soldering paste and 5 chips.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 1 is a flow chart of a nano-copper sintering method, which comprises the following steps:
step 1, digging holes in the nickel-aluminum film according to a preset interval, and then injecting nano-copper soldering paste into each dug hole by using a dispenser to obtain a single assembly of the nano-copper soldering paste and the nickel-aluminum film;
step 3, heating and insulating the self-propagating nano-copper sintering structure for the first time, and ensuring the temperature of the clamp and the temperature of the self-propagating nano-copper sintering structure to be consistent; and continuing to perform second heating and second heat preservation, and cooling to room temperature to complete sintering.
In step 1, the method for digging a hole on a nickel-aluminum film comprises the following steps: using laser to dig holes on the nickel-aluminum film, wherein the diameter of each hole is between 0.4mm and 0.6mm, and the nano copper soldering paste in the assembly is round;
in step 2, the area of the second nano copper soldering paste is 80 to 90 percent of the area of the chip, and the thickness of the second nano copper soldering paste is 10 to 20 mu m;
in step 3, the first heating and the first heat preservation of the self-propagating nano-copper sintered structure include: heating the self-propagating nano-copper sintering structure to 100-120 ℃ for 60-90 s, and then carrying out heat preservation for 120-180 s.
And the first heating and the first heat preservation excite the activation of the first nano-copper soldering paste and the second nano-copper soldering paste, and remove the soldering flux in the nano-copper soldering paste.
In step 3, the performing of the second heating and the second heat preservation includes: heating the self-propagating nano copper sintering structure to 240-260 ℃ for 120-180 s, and then preserving heat for 300-420 s.
In the second heating and second heat preservation, the nickel-aluminum film reaches the reaction temperature, and the first nano-copper soldering paste and the second nano-copper soldering paste are melted by the heat released by the reaction.
And in the step 3, cooling for 120s to 180s to reduce the temperature of the self-propagating nano copper sintering structure to room temperature.
Fig. 2 is a top view of the nano-copper printing and nickel-aluminum thin film, and the nickel-aluminum thin film is cut according to the chip size to obtain a single assembly of the nano-copper solder paste and the nickel-aluminum thin film.
Fig. 3 is a schematic structural diagram of a self-propagating nano-copper sintered structure, wherein a first nano-copper soldering paste is printed on a single nickel-aluminum film on a substrate, the shape and the size of the first nano-copper soldering paste are the same as those of a second nano-copper soldering paste, namely the second nano-copper soldering paste is also 10-20 μm in thickness and occupies 80-90% of the area of a chip. Arranging the assembly on the first nano copper soldering paste on the substrate, and attaching the nickel-aluminum film in the assembly to the second nano copper soldering paste; and covering the chip on the second nano-copper soldering paste in the assembly to obtain a self-propagating nano-copper sintering structure, and applying pressure to the chip to compact the self-propagating nano-copper sintering structure. The fixture is adopted to apply pressure of 0.6MPa to 1MPa to the chip, so that the whole self-propagating nano copper sintering structure is combined more tightly, and cavities formed after sintering can be reduced.
FIG. 4 is a schematic view of a sintering curve. In the embodiment, in the first heating stage, the self-propagating nano-copper sintering structure is heated to 100 ℃ for 60s; in the first heat preservation stage, the heat preservation time is 120s; in the second heating stage, heating the self-propagating nano copper sintering structure from 100 ℃ to 250 ℃ for 120s; in the second heat preservation stage, the heat preservation time is 300s; in the cooling phase, the cooling time was 120s.
By the scheme, the sintering time can be greatly shortened, and the time cost is greatly saved; through the scheme, the pressure required by the self-propagating nano copper sintering structure can be greatly reduced, so that the design and manufacturing difficulty of a clamp for applying pressure to a chip can be effectively reduced, and the equipment cost is greatly saved; furthermore, with the above scheme, the size requirement for the chip is reduced, and when the chip exceeds 5mm × 5mm, for example, 10mm × 10mm, the connection strength is still high. Since the solder pastes of the upper and lower layers are connected by the solder paste in the via holes, the connection strength is greater. And the heat conductivity is higher, the heat dissipation requirement is smaller, and the expenditure of heat dissipation equipment can be reduced.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the present application has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (10)
1. A nano copper sintering method based on a self-propagating film is characterized by comprising the following steps:
step 1, digging holes in the nickel-aluminum film according to a preset interval, and then injecting nano-copper soldering paste into each dug hole by using a dispenser to obtain a single assembly of the nano-copper soldering paste and the nickel-aluminum film;
step 2, printing a first nano-copper soldering paste with the same shape and size as the assembly of the single nano-copper soldering paste and the nickel-aluminum film on the substrate; arranging the assembly on the first nano-copper soldering paste; printing a second nano-copper soldering paste with the same shape and size as the single assembly of the nano-copper soldering paste and the nickel-aluminum film on the side of the assembly away from the first nano-copper soldering paste; covering the chip on the second nano-copper soldering paste by using a clamp, and applying a pressure of 0.6MPa to 1MPa to the chip to obtain a self-propagating nano-copper sintering structure;
step 3, heating and insulating the self-propagating nano-copper sintering structure for the first time, and ensuring the temperature of the clamp and the temperature of the self-propagating nano-copper sintering structure to be consistent; and continuing to perform second heating and second heat preservation, and cooling to room temperature to complete sintering.
2. The method of claim 1, wherein in step 1, the drilling of the nickel aluminum thin film comprises: using laser to dig holes on the nickel-aluminum film, wherein the diameter of each hole is between 0.4mm and 0.6mm, and the nano copper soldering paste in the assembly is round; in step 2, the area of the second nano copper soldering paste is 80 to 90 percent of the area of the chip, and the thickness of the second nano copper soldering paste is 10 to 20 mu m.
3. The method according to claim 1, wherein in step 3, the first heating and the first heat preservation of the self-propagating nano-copper sintered structure comprise: heating the self-propagating nano-copper sintering structure to 100-120 ℃ for 60-90 s, and then carrying out heat preservation for 120-180 s.
4. The method of claim 3, wherein the first heating and the first soaking stimulate activation of the first nano-copper solder paste and the second nano-copper solder paste and remove the flux in the nano-copper solder paste.
5. The method of claim 1, wherein in step 3, said performing a second heating and second incubation comprises: heating the self-propagating nano copper sintering structure to 240-260 ℃ for 120-180 s, and then preserving heat for 300-420 s.
6. The method of claim 5, wherein the nickel aluminum thin film has reached a reaction temperature in the second heating and the second heat-insulating, and the first nano-copper solder paste and the second nano-copper solder paste are melted by heat released by the reaction.
7. The method according to claim 1, wherein in step 3, the self-propagating nano-copper sintered structure is cooled down to room temperature through cooling for 120s to 180s.
8. The method according to claim 1, wherein in the first heating stage, the self-propagating nano-copper sintered structure is heated to 100 ℃ for 60s; in the first heat preservation stage, the heat preservation time is 120s.
9. The method according to claim 8, characterized in that in the second heating stage, the self-propagating nano-copper sintered structure is heated from 100 ℃ to 250 ℃ for 120s; in the second heat preservation stage, the heat preservation time is 300s.
10. The method according to claim 9, characterized in that in the cooling phase the cooling time is 120s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211276146.XA CN115351377A (en) | 2022-10-19 | 2022-10-19 | Nano-copper sintering method based on self-propagating film |
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| CN202211276146.XA CN115351377A (en) | 2022-10-19 | 2022-10-19 | Nano-copper sintering method based on self-propagating film |
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| US20020182436A1 (en) * | 2000-05-02 | 2002-12-05 | Weihs Timothy P. | Freestanding reactive multilayer foils |
| CN107297554A (en) * | 2016-04-15 | 2017-10-27 | 南京理工大学 | A kind of method that high-volume fractional SiCp/Al composites are connected based on nano-multilayer film self- propagating |
| CN108538446A (en) * | 2018-04-20 | 2018-09-14 | 华中科技大学 | A kind of novel nano silver paste and preparation method thereof and sintering method |
| CN113894460A (en) * | 2021-04-19 | 2022-01-07 | 江苏博睿光电有限公司 | Self-propagating brazing film and preparation method thereof |
| CN114043123A (en) * | 2021-12-15 | 2022-02-15 | 深圳先进技术研究院 | Nano copper soldering paste and application thereof in chip packaging interconnection structure |
| CN114535863A (en) * | 2022-03-25 | 2022-05-27 | 重庆平创半导体研究院有限责任公司 | Self-sintered nano-copper soldering paste, preparation method and use method thereof |
-
2022
- 2022-10-19 CN CN202211276146.XA patent/CN115351377A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020182436A1 (en) * | 2000-05-02 | 2002-12-05 | Weihs Timothy P. | Freestanding reactive multilayer foils |
| CN107297554A (en) * | 2016-04-15 | 2017-10-27 | 南京理工大学 | A kind of method that high-volume fractional SiCp/Al composites are connected based on nano-multilayer film self- propagating |
| CN108538446A (en) * | 2018-04-20 | 2018-09-14 | 华中科技大学 | A kind of novel nano silver paste and preparation method thereof and sintering method |
| CN113894460A (en) * | 2021-04-19 | 2022-01-07 | 江苏博睿光电有限公司 | Self-propagating brazing film and preparation method thereof |
| CN114043123A (en) * | 2021-12-15 | 2022-02-15 | 深圳先进技术研究院 | Nano copper soldering paste and application thereof in chip packaging interconnection structure |
| CN114535863A (en) * | 2022-03-25 | 2022-05-27 | 重庆平创半导体研究院有限责任公司 | Self-sintered nano-copper soldering paste, preparation method and use method thereof |
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Application publication date: 20221118 |
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