CN115348742A - Circuit processing method based on nano metal pulse electro-sintering - Google Patents
Circuit processing method based on nano metal pulse electro-sintering Download PDFInfo
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- CN115348742A CN115348742A CN202110522574.5A CN202110522574A CN115348742A CN 115348742 A CN115348742 A CN 115348742A CN 202110522574 A CN202110522574 A CN 202110522574A CN 115348742 A CN115348742 A CN 115348742A
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/225—Correcting or repairing of printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F2007/068—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts repairing articles
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The application provides a circuit processing method based on pulse electro-sintering of nano metal, wherein the method comprises the following steps: acquiring a position to be processed on a circuit board; placing a nano sintering material at the position to be processed, and dripping pulse electroplating solution on the nano sintering material; arranging a metal probe on the pulse electroplating solution, connecting pulse voltage to the metal probe and the circuit board, heating and surface electroplating the nano sintered material, and sintering the nano sintered material by using laser; cleaning the circuit board and carrying out surface treatment on the circuit board; according to the circuit processing method based on the pulse electro-sintering of the nano metal, the sintering efficiency of the nano material is greatly improved, the forming or repairing efficiency of the circuit is effectively improved, and the forming or repairing quality of the circuit can be effectively improved.
Description
Technical Field
The application relates to the technical field of integrated circuits, in particular to a line processing method based on nano metal pulse electro-sintering.
Background
The fine circuit board is a support body of an electronic component and a carrier for electrical connection, and along with the development of miniaturization and digitalization of electronic products, the printed circuit board is also developed towards high density, high precision, fine pore diameter, fine lead, fine spacing, high reliability, multilayering, high-speed transmission, light weight and thinness, and higher requirements are put forward on the forming and repairing of fine circuits.
In the prior art, a metal circuit is formed by matching a nano metal material with laser sintering on a fine circuit board, the method is suitable for forming and repairing the fine circuit board and has the characteristic of high precision, but the method has the problem of low efficiency, the laser is required to be focused at a specific position for heating and sintering, and particularly when the method is used for repairing the circuit, the low circuit repairing efficiency means that the time for putting the circuit board into use again is influenced.
In view of the above problems, no effective technical solution exists at present.
Disclosure of Invention
An object of the embodiments of the present application is to provide a method for processing a circuit based on pulse electro-sintering of nano-metal, which improves the sintering efficiency of nano-material during circuit forming or repairing, thereby reducing the time required for circuit forming or repairing.
The embodiment of the application provides a circuit processing method based on pulse electro-sintering of nano metal, which is used for repairing or forming a position to be processed on a circuit board, and comprises the following steps:
s101, acquiring a position to be processed on a circuit board;
s102, placing a nano sintering material in the position to be processed, and dripping pulse electroplating solution on the nano sintering material;
s103, arranging a metal probe on the pulse electroplating solution, connecting pulse voltage to the metal probe and the circuit board, heating and surface electroplating the nano sintering material, and sintering the nano sintering material by using laser;
and S104, cleaning the circuit board, and carrying out surface treatment on the circuit board.
According to the circuit processing method based on the pulse electro-sintering of the nano metal, the nano sintering material is placed in the position to be processed, then the pulse electroplating solution is dripped, the pulse voltage is utilized to carry out rapid auxiliary temperature rise on the nano sintering material through the pulse electroplating solution, the sintering processing of the nano sintering material by laser is facilitated, and therefore the circuit processing efficiency is greatly improved.
The circuit processing method based on the pulse electro-sintering of the nano metal comprises the following steps that one metal probe or one pair of metal probes with different metal materials is adopted.
The circuit processing method based on the pulse electro-sintering of the nano metal is characterized in that in the step S2, the pulse electroplating solution covers the position to be processed and is provided with a spherical convex surface.
The circuit processing method based on the pulse electro-sintering of the nano metal comprises the step of placing the circuit board in an easily ionized gas atmosphere.
In the line processing method based on nano metal pulse electro-sintering, in step S3, an ultrasonic transmitter may be used to apply positive pressure ultrasonic waves to assist laser sintering.
The circuit processing method based on the pulse electro-sintering of the nano metal comprises the following steps of S5:
s1041, cleaning the circuit board by a wet method, and removing the residual nano sintering material;
s1042, passivating the cleaned circuit board.
In the circuit processing method based on the pulse electro-sintering of the nano metal, in step S3, a power-on plate for changing the concentration of the cationic region in the pulse plating solution may be placed under the circuit board.
The line processing method based on the pulse electro-sintering of the nano metal is characterized in that the pulse voltage is direct current pulse voltage or pulsating direct current voltage obtained by rectifying alternating current voltage.
In the method for processing the circuit based on the pulse electro-sintering of the nano metal, in step S101, the position to be processed is a position of a disconnection defect or a position to be formed.
From the above, according to the line processing method based on the pulse electro-sintering of the nano metal provided by the embodiment of the application, the pulse electroplating solution is dripped into the nano sintering material, and the pulse voltage is used for rapidly assisting in heating the nano sintering material through the pulse electroplating solution, so that the sintering processing of the nano sintering material by the laser is facilitated, the sintering efficiency of the nano material is greatly improved, and the forming or repairing efficiency of the line is effectively improved; in addition, the pulse electroplating solution is electroplated through pulse voltage, so that metal cations in the pulse electroplating solution are reduced into metal which is attached to the nano sintering material, the nano sintering material is more continuous and uniform, and the forming or repairing quality of the circuit is improved.
Drawings
Fig. 1 is a flowchart of a line processing method based on nanometal pulse electro-sintering according to an embodiment of the present disclosure.
Fig. 2 to 6 are detailed schematic diagrams of a method for processing a circuit based on pulsed electro-sintering of nano-metals according to an embodiment of the present disclosure.
Reference numerals: 1. a circuit board; 2. a position to be processed; 3. a nano-sintered material; 4. pulse plating solution; 5. a metal probe; 6. and (3) a laser probe.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. The components of the embodiments of the present application, as generally described and illustrated in the figures herein, could be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as presented in the figures, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined or explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
In a first aspect, please refer to fig. 1-6, fig. 1-6 illustrate a method for processing a circuit based on pulse electro-sintering of nano-metal in some embodiments of the present application, for repairing or forming a position to be processed on a circuit board, the method comprising the following steps:
s101, acquiring a position 2 to be processed on a circuit board 1;
specifically, the position 2 to be processed on the circuit board 1 can be obtained by means of an electronic pen detection or an automatic optical detection technology, and in the embodiment of the present application, an automatic optical detection technology is preferably adopted, and the position 2 to be processed on the circuit board 1, which needs to be processed, is obtained quickly and accurately by comparing the circuit board 1 to be processed with the standard circuit board 1.
More specifically, after the position to be processed 2 is obtained, the position to be processed 2 may be marked on the circuit board 1 or the position to be processed 2 may be recorded by a computer program, which is beneficial to subsequently and accurately positioning the position to be processed 2 for processing.
S102, placing a nano sintered material 3 in the position 2 to be processed, and dripping a pulse electroplating solution 4 on the nano sintered material 3;
specifically, the nano-sintered material 3 placed in the position to be processed 2 should be fully paved on the position to be processed 2, if the position to be processed 2 is an area with a linear length of 30um, the nano-sintered material 3 should be fully paved along the area with the linear length, so that the nano-sintered material 3 is connected with the front end and the rear end of the area, thereby ensuring that the nano-sintered material 3 can be continuously positioned at the position to be processed after being sintered, and realizing line repair or molding; in addition, the instilled pulse electroplating solution 4 should also cover the whole nano sintered material 3, so as to ensure that the pulse electroplating solution can effectively provide assistance for the nano sintered material 3 and promote the nano sintered material 3 to complete the line processing.
S103, arranging a metal probe 5 on the pulse electroplating solution 4, connecting pulse voltage to the metal probe 5 and the circuit board 1, heating and surface electroplating the nano sintered material 3, and sintering the nano sintered material 3 by using laser;
specifically, when the metal probe 5 and the circuit board 1 are connected with pulse voltage, the metal probe 5, the pulse electroplating solution 4, the nano sintering material 3 and the circuit board 1 form a pulse circuit, pulse current is generated in the pulse circuit, the pulse electroplating solution 4 is quickly evaporated to dryness to generate high temperature, so that the nano sintering material 3 is quickly heated and softened, meanwhile, in the evaporation process of the electroplating solution, cations in the solute in the pulse electroplating solution 4 are reduced to metal attached to the surface of the nano sintering material 3, gaps and uneven parts on the surface of the nano sintering material 3 can be filled, and the form of the nano sintering material 3 is smoother and more uniform; the laser probe 6 is used for generating laser to heat and sinter the nanometer sintering material 3 after being heated, and the pulse voltage is used for heating the nanometer sintering material 3, so that the laser irradiation time can be effectively reduced, the sintering time can be greatly shortened, and the sintering efficiency of the nanometer sintering material 3 can be improved; after sintering, the nano sintering material 3 in the original position 2 to be processed is sintered to form metal circuits connected to the front end and the rear end of the position 2 to be processed, so that circuit connection of the position 2 to be processed is realized.
S104, cleaning the circuit board 1, and performing surface treatment on the circuit board 1.
Specifically, the cleaning of the wiring board 1 is mainly to remove the surplus nano sintered material 3, and the surface treatment is mainly to perform an insulation treatment to protect the wiring board 1.
According to the circuit processing method based on the pulse electro-sintering of the nano metal, the nano sintering material 3 is placed in the position 2 to be processed, then the pulse electroplating solution 4 is dripped, the pulse voltage is utilized to carry out rapid auxiliary temperature rise on the nano sintering material 3 through the pulse electroplating solution 4, the sintering processing of the nano sintering material 3 by laser is facilitated, and therefore the circuit processing efficiency is greatly improved; in addition, the pulse electroplating solution 4 is electroplated through pulse voltage, so that metal cations of the pulse electroplating solution 4 are reduced into metal which is attached to the nano sintered material 3, the nano sintered material 3 is more continuous and uniform, and the problem that the line connection effect is not ideal or the line connection fails due to nonuniform filling or gaps of the nano sintered material 3 in the position 2 to be processed is avoided.
In some preferred embodiments, in step S101, the position to be processed 2 is an open circuit defect position or a position to be formed; the open circuit defect position is the file of the circuit open circuit caused by the problem or accident of the original circuit board 1, and the position to be formed refers to the position of the device which is realized by the metal circuit and needs to be formed on the non-wiring circuit board 1.
The difference between the processing manner of the position to be formed and the processing manner of the open-circuit defect position is that in step S101, the position to be formed or the open-circuit defect position is directly obtained, and the processing manners in the other steps are the same, so the processing method of the embodiment of the present application is further described below by taking the open-circuit defect position as an example.
In some preferred embodiments, laser irradiation can be performed after the pulse voltage is powered off, so that the pulse plating solution 4 on the surface of the nano sintering material 3 is evaporated to dryness and then laser sintering is performed, and the ordered performance of the line repairing process is ensured; pulse voltage electrification and laser irradiation can be simultaneously carried out, and the nano sintering material 3 is heated and heated by utilizing the pulse voltage and the laser irradiation, so that the heat loss can be effectively reduced, and the sintering efficiency is improved; laser irradiation can be carried out in the pulse voltage electrifying process, the two heating processes are effectively connected, and the sintering process is ensured to be smoothly carried out.
In some preferred embodiments, the pulse voltage is a high frequency pulse voltage, so that the pulse plating solution 4 can be quickly evaporated and the nano-sintered material 3 can be assisted in warming.
In some preferred embodiments, the nano-sintered material 3 is nano-copper powder or nano-copper paste, and the pulse plating solution 4 is a copper sulfate solution; copper is a common circuit material with high conductivity and low cost, so that copper powder or copper paste made of nano materials is adopted as the nano sintering material 3, and laser is facilitated to carry out rapid sintering molding to generate metallurgical bonding so as to obtain a metal circuit for repairing an open circuit position; in a similar way, copper which is consistent with the circuit material can be reduced by plating by adopting a copper sulfate solution, so that the consistency of the repaired circuit material is ensured.
In this embodiment, the copper sulfate solution is weakly acidic, which is beneficial for the pulse voltage to reduce the copper ions in the copper sulfate solution to copper and attach to the nano-sintered material 3.
In other embodiments, the pulse plating solution 4 may be neutral or weakly alkaline, and the pulse plating solution 4 only generates high temperature by pulse current to assist the nano-sintered material 3 in heating.
In some preferred embodiments, the nano sintered material 3 is placed in the position to be processed 2 by brushing, so that the nano sintered material 3 has a relatively flat upper surface, thereby increasing the uniform height of the line formed after sintering the nano sintered material 3, and the laser sintering process is to displace along the repair line, and the light path displacement process has a uniform width, so that a metal line with a uniform cross section can be obtained, and the line repaired at the open circuit position has a relatively uniform cross section area, thereby effectively avoiding the repair line from being broken again to form an open circuit.
In some preferred embodiments, when the nano-copper paste is used as the nano-sintering material 3, in the preparation of the paste containing the nano-metal particles, the nano-metal particles can be added into the organic alcohol reagent, and then the rosin and the soldering flux are added to form the paste, which is beneficial to improving the sintering molding efficiency of the metal circuit; in addition, in the step S3, when high-frequency pulse voltage is introduced, the temperature of the paste of the nano sintering material 3 is increased more obviously locally, the metallurgical bonding of the nano material is facilitated, and the sintering efficiency can be further improved.
If a certain amount of the pulse plating solution 4 between the metal probe 5 and the nano-sintered material 3 evaporates, the current cannot pass through the metal probe 5 and the nano-sintered material 3, which may cause the pulse plating solution 4 to remain and affect the laser heating sintering, so in some preferred embodiments, to ensure that the pulse plating solution 4 can be completely evaporated, the tip of the metal probe 5 contacts the top surface of the nano-sintered material 3, and ensure that the pulse voltage connected to the metal probe 5 can be continued until the pulse plating solution 4 is evaporated.
In some preferred embodiments, the metal probe 5 is one or a pair of dissimilar metal materials.
Specifically, when one metal probe 5 is used, the part of the nano sintered material 3 connected between the metal probe 5 and the circuit board pulse voltage generates local temperature rise, so that the laser can be assisted to perform material sintering; for example, in the circuit board 1 shown in fig. 5, if the pulse voltage is applied to the left end of the circuit board 1 and the metal probe 5, the nano-sintered material 3 located on the left side of the metal probe 5 can rapidly generate a temperature rise, so that the setting position of the metal probe 5 can be adjusted according to actual repair requirements, and the adjustment of the temperature rise position is realized, so that the repair method of the present application is suitable for different repair requirements.
Specifically, when there are two metal probes 5 and the two metal probes 5 are made of one metal material, when the pair of probes 5 with different electric metals approach the position 2 to be processed on the circuit board 1, a local strong electric field is formed due to the characteristics of the different metals, which causes gas ionization, so that the temperature of the air near the tip position of the metal probe 5 is raised, which is beneficial to heating the nano-sintered material 3, thereby assisting the laser to sinter.
In some preferred embodiments, in step S2, the pulse plating solution 4 covers the site to be treated 2 and has a spherical convex surface; specifically, the pulse electroplating solution 4 generates a spherical convex surface by using liquid tension, so that the spherical convex surface is beneficial to completely covering the nano sintering material 3 and the position 2 to be processed, the metal probe 5 is beneficial to being inserted into the pulse electroplating solution 4, and the pulse electroplating solution covering the whole position 2 to be processed is utilized, so that the pulse voltage can be ensured to be smoothly switched on and electrified, and the phenomenon that the electrification fails due to the tiny defect of the nano sintering material 3 is avoided.
In some preferred embodiments, the pulsed electroplating solution 4 is dripped onto the site 2 by means of a drip nozzle, ensuring that the dripped amount of solution effectively covers the site 2 without excessive overflow.
In some preferred embodiments, the wiring board 1 is placed in an easily ionizable gas atmosphere; after the pulse voltage of the high frequency is let in, the gas can be ionized, and the ionized gas is utilized to conduct electricity, so that the gas near the tip of the metal probe 5 generates high temperature, the laser is favorable for sintering the nano sintering material 3, and the sintering efficiency is improved.
In some preferred embodiments, the gas of the easily ionizable atmosphere comprises hydrogen, helium, xenon, etc., and in this embodiment, one or more thereof.
In some preferred embodiments, in step S3, positive pressure ultrasonic waves may be applied using an ultrasonic transmitter to assist laser sintering.
Specifically, the ultrasonic emitter is used for applying positive pressure to generate small-amplitude oscillation pressure, so that a hammering effect is generated on the nano sintered material 3, the sintering effect is improved, and the material is more stable after being sintered.
In some preferred embodiments, step S5 comprises the sub-steps of:
s1041, cleaning the circuit board 1 by a wet method, and removing the residual nano sintering material 3;
specifically, the circuit board 1 is cleaned by ethanol under the ultrasonic condition, so that residual nano sintered materials 3 on the circuit board 1 can be effectively removed, cleanness of the circuit board 1 is ensured, and short circuit or other problems caused by attachment of the nano sintered materials 3 to the circuit are avoided.
S1042, passivating the cleaned circuit board 1.
Specifically, after the circuit board 1 is passivated, the circuit on the circuit board 1 can have a compact passivation film, the metal and the corrosion medium can be completely separated, the metal and the corrosion medium are prevented from being in direct contact, and the effect of preventing corrosion is achieved.
In some preferred embodiments, a current-carrying plate for changing the concentration of the cationic region in the pulse plating solution 4 may be placed under the wiring board 1 in step S3.
Specifically, the current-carrying plate is arranged so that cations are concentrated near the nano sintered material 3, which is beneficial for the cations to be reduced into metal to be attached to the nano sintered material 3, that is, the concentration of metal ions in the electroplating area near the nano sintered material 3 is increased, thereby improving the electroplating efficiency.
In some preferred embodiments, the pulsed voltage is a direct current pulsed voltage or a pulsating direct current voltage obtained by rectifying an alternating current voltage.
Specifically, the pulse voltage adopts high-frequency pulse voltage, so that the nano sintering material 3 can be rapidly heated; the pulse voltage is preferably a pulsating direct voltage obtained by rectifying an alternating voltage.
In other embodiments, the electroplating heating treatment can be realized by using alternating current with different positive and negative voltages as pulse voltage, which is favorable for stabilizing the sintered circuit.
Example one
Taking a circuit board with a broken circuit problem, determining the broken circuit position on the circuit board by using an automatic optical inspection technology (AOI), brushing a layer of nano copper powder on the broken circuit position to be repaired, dotting 0.5 ml of copper sulfate solution with the concentration of 1mol/L to enable the copper sulfate solution to cover the nano copper powder on the broken circuit position, inserting a metal probe above the copper sulfate solution, and applying square wave pulse voltage of 5V and 50Hz to one end of the circuit board to be repaired and the metal probe to quickly heat the pulse copper sulfate solution and the nano copper powder; moving a laser probe with the diameter of 20 micrometers to a position which is 100 micrometers away from the area to be repaired, emitting laser for sintering, and sintering the nano copper powder into a copper circuit after the laser irradiates along the area to be repaired; and cleaning the circuit board by using ethanol under the condition of adding ultrasound, removing residual nano copper powder particles, finally passivating the cleaned circuit board, and printing carbon ink.
Example two
Taking a circuit board with a circuit breaking problem, determining a circuit breaking position on the circuit board by using an automatic optical inspection technology (AOI), brushing a layer of nano copper paste on the circuit breaking position to be repaired, dotting 0.3 ml of copper sulfate solution with the concentration of 1.5mol/L to enable the copper sulfate solution to cover the nano copper paste on the circuit breaking position, inserting a metal probe into the nano copper paste from the upper part of the copper sulfate solution and enabling the nano copper paste to be abutted against the copper sulfate solution, and applying sharp pulse voltage of 10V and 50Hz to the circuit board to be repaired to enable the pulse copper sulfate solution and the nano copper powder to be heated rapidly; moving a laser probe with the diameter of 20 mu m to a position which is 100 mu m away from the area to be repaired, emitting laser for sintering, and sintering the nano copper paste into a copper circuit after the laser irradiates along the area to be repaired; and cleaning the circuit board by using ethanol under the condition of adding ultrasound, removing residual nano copper powder particles, finally passivating the cleaned circuit board, and printing carbon ink.
EXAMPLE III
Taking a circuit board to be subjected to circuit forming, determining all positions to be connected and formed on the circuit board by using an automatic optical inspection technology (AOI), brushing a layer of nano copper paste on all the positions to be connected and formed, dotting 0.3 ml of copper sulfate solution with the concentration of 1.5mol/L to enable the copper sulfate solution to cover the nano copper paste on the positions to be connected and formed, arranging a metal probe above the copper sulfate solution to insert and abut against the nano copper paste, and applying sharp pulse voltage of 10V and 50Hz to the circuit board to be formed to enable the temperature of the pulse copper sulfate solution and the nano copper powder to be rapidly increased; moving a laser probe with the diameter of 20 micrometers to a position 100 micrometers away from the area to be molded, emitting laser for sintering, and sintering the nano copper paste into a copper circuit after the laser irradiates along the area to be molded; and cleaning the circuit board by using ethanol under the ultrasonic condition, removing residual nano copper powder particles, passivating the cleaned circuit board, and printing carbon ink.
From the above, according to the line processing method based on the pulse electro-sintering of the nano metal provided by the embodiment of the application, the pulse electroplating solution is dripped into the nano sintering material, and the pulse voltage is used for rapidly assisting in heating the nano sintering material through the pulse electroplating solution, so that the sintering processing of the nano sintering material by the laser is facilitated, the sintering efficiency of the nano material is greatly improved, and the forming or repairing efficiency of the line is effectively improved; in addition, the pulse electroplating solution is electroplated through pulse voltage, so that metal cations in the pulse electroplating solution are reduced into metal which is attached to the nano sintering material, the nano sintering material is more continuous and uniform, and the forming or repairing quality of the circuit is improved.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A circuit processing method based on pulse electro-sintering of nano-metal is used for repairing or forming a position to be processed on a circuit board, and is characterized by comprising the following steps:
s101, acquiring a position to be processed on a circuit board;
s102, placing a nano sintering material in the position to be processed, and dripping pulse electroplating solution on the nano sintering material;
s103, arranging a metal probe on the pulse electroplating solution, connecting pulse voltage to the metal probe and the circuit board, heating and surface electroplating the nano sintering material, and sintering the nano sintering material by using laser;
and S104, cleaning the circuit board, and carrying out surface treatment on the circuit board.
2. The method for processing circuits based on pulse electro-sintering of nano-metals as claimed in claim 1, wherein the nano-sintering material is nano-copper powder or nano-copper paste, and the pulse plating solution is copper sulfate solution.
3. The method for processing lines based on pulsed electro-sintering of nano-metals as claimed in claim 1, wherein the metal probes are one or a pair of probes with dissimilar metal materials.
4. The method as claimed in claim 1, wherein in step S2, the pulse plating solution covers the position to be processed and has a spherical convex surface.
5. The circuit processing method based on nano-metal pulse electro-sintering as claimed in claim 1, wherein the circuit board is placed in an easily ionized gas atmosphere.
6. The method for processing lines based on pulsed electro-sintering of nano-metals according to claim 1, wherein in step S3, the laser sintering is assisted by applying positive-pressure ultrasonic waves by using an ultrasonic transmitter.
7. The method for processing a line based on pulse electro-sintering of nano-metals as claimed in claim 1, wherein step S5 comprises the sub-steps of:
s1041, cleaning the circuit board by a wet method, and removing residual nano sintering materials;
s1042, passivating the cleaned circuit board.
8. The method for processing a circuit according to claim 1, wherein a current-carrying plate for changing the concentration of the cationic region in the pulse plating solution is disposed under the wiring board in step S3.
9. The method for line treatment based on pulsed electro-sintering of nanometals according to claim 1, wherein the pulsed voltage is a direct current pulsed voltage or a pulsating direct current voltage rectified from an alternating current voltage.
10. The method for processing lines according to any of claims 1-9, wherein the location to be processed is an open circuit defect location or a location to be formed in step S101.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110522574.5A CN115348742A (en) | 2021-05-13 | 2021-05-13 | Circuit processing method based on nano metal pulse electro-sintering |
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| CN202110522574.5A CN115348742A (en) | 2021-05-13 | 2021-05-13 | Circuit processing method based on nano metal pulse electro-sintering |
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