CN115347085A - Chip temporary assembly, display panel and manufacturing method thereof - Google Patents
Chip temporary assembly, display panel and manufacturing method thereof Download PDFInfo
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- CN115347085A CN115347085A CN202110517356.2A CN202110517356A CN115347085A CN 115347085 A CN115347085 A CN 115347085A CN 202110517356 A CN202110517356 A CN 202110517356A CN 115347085 A CN115347085 A CN 115347085A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000003292 glue Substances 0.000 claims abstract description 97
- 238000003466 welding Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims description 115
- 239000010410 layer Substances 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 26
- 238000000197 pyrolysis Methods 0.000 claims description 22
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 239000012790 adhesive layer Substances 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 9
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- 238000010438 heat treatment Methods 0.000 claims description 5
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
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- 229910000679 solder Inorganic materials 0.000 description 4
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a chip temporary assembly, a display panel and a manufacturing method thereof, wherein in the display panel, a welding point of a micro light-emitting chip and a corresponding welding pad on a display back plate is coated by pyrolytic glue, and the pyrolytic glue can block water and oxygen, so that the oxidation of the welding point is slowed or avoided, the situation that the power consumption of the micro light-emitting chip is increased or even loses efficacy due to the oxidation is avoided as much as possible, and the reliability of the micro light-emitting chip is improved.
Description
Technical Field
The invention relates to the field of display, in particular to a chip temporary assembly, a display panel and a manufacturing method of the chip temporary assembly.
Background
Micro-LED is a new generation of display technology, has higher photoelectric efficiency, higher brightness, higher contrast ratio and lower power consumption compared with liquid crystal display, can also be combined with a flexible panel to realize flexible display, and has the same light emitting principle compared with the traditional large-size or common LED display. In a conventional LED display, solder paste is often printed and then an LED chip is soldered to a PCB substrate by SMT (Surface mount Technology), which is no longer suitable for Micro-LEDs.
At present, the welding of the Micro-LED chip and the back plate is usually realized by bonding the Micro-LED chip and the back plate through a huge welding technology after a bonding pad is made on the back plate by utilizing metal with stronger metal activity, such as indium In. When the Micro-LED chip is used in the later period, when the display panel is in a certain water and oxygen condition, because the metal activity of the bonding pad is stronger, the welding point between the Micro-LED chip and the bonding pad is easy to oxidize, the resistance is increased after oxidation, the power consumption of the Micro-LED chip is increased, the heat production is increased until the Micro-LED chip is broken, and the reliability of the Micro-LED chip is poor.
Therefore, how to slow down or avoid the oxidation of the welding point is an urgent problem to be solved.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present application provides a chip temporary assembly, a display panel and a method for manufacturing the same, which aims to solve the problem that the solder joints are prone to oxidation in the related art.
The application provides a temporary assembly of chip, includes:
a temporary substrate;
the pyrolysis glue layer is formed by pyrolysis glue and is arranged on the front surface of the temporary substrate;
and a plurality of micro light-emitting chips arranged on the pyrolytic adhesive layer;
the pyrolytic glue layer comprises a plurality of pyrolytic glue units which are separated from each other, and the pyrolytic glue units correspond to the micro light-emitting chips one by one; the electrodes of the micro light-emitting chips are respectively embedded into the corresponding pyrolytic gel units; after the pyrolytic glue unit is heated, pyrolytic glue positioned between the electrodes of the micro light-emitting chip is adhered to the micro light-emitting chip and is separated from the temporary substrate along with the micro light-emitting chip; and the debonding temperature value of the thermal debonding is greater than or equal to the melting point value of the bonding pad bonded with the electrode.
In the chip temporary assembly, a plurality of mutually separated pyrolytic gel units are formed on the temporary substrate, electrodes of a plurality of micro luminous chips are respectively embedded into the corresponding pyrolytic gel units to be fixed on the temporary substrate, when the micro luminous chips are transferred from the temporary substrate subsequently, the pyrolytic gel units can be subjected to temperature control to be heated, pyrolytic gel between the electrodes of the micro luminous chips is adhered to the micro luminous chips and separated from the temporary substrate along with the micro luminous chips, so that the pyrolytic gel is reserved between the electrodes of the micro luminous chips transferred from the temporary substrate, after the electrodes of the micro luminous chips are welded with bonding pads in corresponding chip bonding regions, the pyrolytic gel between the electrodes is heated to be liquid and flows to the bonding pads along the electrodes, the bonding pads between the electrodes and the bonding pads are coated, water and oxygen are blocked, so that the oxidation of the bonding pads is slowed down or avoided, the power consumption increase or even failure of the micro luminous chips caused by the oxidation is avoided, and the reliability of the micro luminous chips is improved.
Based on the same inventive concept, the present application also provides a display panel, comprising a display backplane and the plurality of micro light emitting chips transferred onto the display backplane from the chip temporary assembly as described above;
a driving circuit is arranged on the front surface of the display back plate and comprises a plurality of chip bonding areas corresponding to the micro light-emitting chips, and bonding pads corresponding to the electrodes of the micro light-emitting chips are arranged in the chip bonding areas;
and after the micro light-emitting chips are transferred from the temporary substrate to the corresponding chip bonding areas, the electrodes of the micro light-emitting chips are welded with the corresponding bonding pads in the chip bonding areas, and the pyrolytic gel between the electrodes of the micro light-emitting chips is heated to be in a liquid state, flows to the bonding pads along the electrodes and coats the welding points between the electrodes and the bonding pads.
Among the above-mentioned display panel, the welding point that corresponds the pad on its miniature luminous chip and the demonstration backplate is glued the cladding by the pyrolysis, but this pyrolysis glue separation water oxygen to slow down or avoid the welding point oxidation to appear, promote miniature luminous chip's reliability, thereby promote display panel's yields and reliability.
Based on the same inventive concept, the application also provides a manufacturing method of the chip temporary assembly, which comprises the following steps:
providing a temporary substrate;
arranging pyrolytic gel on the front surface of the temporary substrate to form a pyrolytic gel layer, and arranging a plurality of micro light-emitting chips on the pyrolytic gel layer;
the arranged pyrolytic glue layer comprises a plurality of pyrolytic glue units which are separated from each other, and the pyrolytic glue units correspond to the micro light-emitting chips one by one; the electrodes of the micro light-emitting chips are respectively embedded into the corresponding pyrolytic gel units; after the pyrolytic glue unit is heated, the pyrolytic glue between the electrodes of the micro light-emitting chip is adhered on the micro light-emitting chip and is separated from the temporary substrate along with the micro light-emitting chip; and the debonding temperature value of the thermal debonding is greater than or equal to the melting point value of the bonding pad bonded with the electrode.
The chip temporary assembly prepared by the manufacturing method is characterized in that a plurality of mutually separated pyrolytic gel units for bearing the micro light-emitting chips are formed on the temporary substrate, the electrodes of the micro light-emitting chips are respectively embedded into the corresponding pyrolytic gel units, when the micro light-emitting chips are transferred from the temporary substrate in the subsequent process, the pyrolytic gel units can be subjected to temperature control to be heated, then the pyrolytic gel between the electrodes of the micro light-emitting chips is adhered to the micro light-emitting chips, and the pyrolytic gel is separated from the temporary substrate along with the micro light-emitting chips, so that the pyrolytic gel is reserved between the electrodes of the micro light-emitting chips; after the electrode of the micro light-emitting chip is welded with the corresponding bonding area of the chip, the pyrolytic gel between the electrodes is heated and then becomes liquid, the pyrolytic gel flows to the bonding pad along the electrode, the welding point between the electrode and the bonding pad is coated, the oxidation of the welding point is slowed down or avoided, and the reliability of the micro light-emitting chip is improved.
Based on the same inventive concept, the present application further provides a manufacturing method of the display panel, including:
manufacturing a display backplane and a chip temporary assembly as described above; a driving circuit is arranged on the front surface of the display back plate and comprises a plurality of chip bonding areas corresponding to the micro light-emitting chips, and bonding pads corresponding to the electrodes of the micro light-emitting chips are arranged in the chip bonding areas;
and transferring the micro light-emitting chip from the temporary substrate to the corresponding chip bonding area to complete bonding, welding the electrode of the micro light-emitting chip and the corresponding bonding pad in the chip bonding area after bonding is completed, heating the pyrolytic gel between the electrodes of the micro light-emitting chip to be liquid, flowing to the bonding pad along the electrode, and coating the welding point between the electrode and the bonding pad.
Among the display panel process that above-mentioned display panel's manufacturing method made, because it glues to remain the pyrolysis between miniature luminous chip's the electrode, after the electrode of this miniature luminous chip welds with the interior pad welding of corresponding chip bonding district, make the pyrolysis between its electrode glue become liquid after being heated, along electrode flow direction pad, with the welding point cladding between electrode and the pad, but this pyrolysis glue separation water oxygen, thereby slow down or avoid the welding point oxidation to appear, promote miniature luminous chip's reliance, thereby promote display panel's yields and reliability.
Drawings
FIG. 1-1 is a first top view of a chip temporary assembly provided in an embodiment of the present application;
FIG. 1-2 isbase:Sub>A cross-sectional view taken along line A-A of FIG. 1-1;
fig. 1-3 are schematic diagrams illustrating a micro light emitting chip picked up by a transfer head according to an embodiment of the present disclosure;
fig. 1-4 are schematic microscopic views of a thermal gel on a micro light-emitting chip provided in the embodiments of the present application;
fig. 2 is a second top view of a chip temporary assembly provided in the present embodiment;
FIG. 3-1 is a third top view of a chip temporary assembly provided in an embodiment of the present application;
FIG. 3-2 is a cross-sectional view taken along line C-C of FIG. 3-1;
FIG. 4-1 is a fourth top view of a chip temporary assembly provided in the embodiments of the present application;
FIG. 4-2 is a cross-sectional view taken in the direction D-D of FIG. 4-1;
fig. 4-3 are schematic views illustrating a thermal release unit embedded in the bottom surface of the epitaxial layer according to an embodiment of the present disclosure;
FIG. 5-1 is a schematic flow chart illustrating a method for fabricating a temporary chip assembly according to an embodiment of the present disclosure;
FIG. 5-2 is a schematic diagram of forming a full pyrolytic glue layer according to an embodiment of the present application;
FIG. 5-3 is a cross-sectional view taken in the direction E-E of FIG. 5-2;
FIGS. 5-4 are schematic views of growth substrates provided in embodiments of the present application;
FIGS. 5-5 are schematic views illustrating the attachment of a growth substrate to a temporary substrate according to an embodiment of the present disclosure;
FIGS. 5-6 are schematic views illustrating the peeling of a growth substrate according to embodiments of the present disclosure;
fig. 5-7 are schematic diagrams illustrating the micro light-emitting chip transferred to the entire pyrolytic glue layer according to the embodiment of the present application;
FIGS. 5-8 are cross-sectional views in the direction F-F of FIGS. 5-7;
FIG. 6-1 is a schematic flow chart illustrating a method for fabricating another temporary chip assembly according to an embodiment of the present disclosure;
FIG. 6-2 is a schematic diagram of another embodiment of the present disclosure for forming a full pyrolytic glue layer;
6-3 are schematic diagrams of a pyrolysis glue unit provided by embodiments of the present application;
FIG. 6-4 is a cross-sectional view in the direction G-G of FIG. 6-3;
fig. 6-5 are schematic views illustrating another growth substrate and a temporary substrate bonded according to an embodiment of the present disclosure;
FIGS. 6-6 are schematic views illustrating another exemplary lift-off process for a growth substrate according to embodiments of the present disclosure;
FIG. 7-1 is a schematic view of a display backplane provided in an alternative embodiment of the present application;
FIG. 7-2 is a schematic view of a transfer head transferring a micro light-emitting chip to a display backplane according to another alternative embodiment of the present application;
FIG. 8 is a schematic view of a first pyrolytic gel coating according to another alternative embodiment of the present application;
FIG. 9-1 is a schematic view of a second pyrolytic gel coating according to another alternative embodiment of the present application;
FIG. 9-2 is a third schematic view of a pyrolytic gel coating according to another alternative embodiment of the present application;
FIG. 10-1 is a schematic diagram of a method for fabricating a display panel according to another alternative embodiment of the present application;
FIG. 10-2 is a schematic view of a transfer head and temporary substrate bonding provided in an alternative embodiment of the present application;
FIG. 10-3 is a schematic diagram of a transfer head picking up a micro light-emitting chip according to another alternative embodiment of the present application;
FIG. 10-4 is a schematic view of a transfer head transferring a micro light-emitting chip to a display backplane according to another alternative embodiment of the present application;
FIGS. 10-5 are schematic views of a pyrolytic gel coating provided in accordance with another alternative embodiment of the present application;
FIGS. 10-6 are break away schematic views of a transfer head provided in accordance with another alternative embodiment of the present application;
description of reference numerals:
10-whole layer of pyrolytic glue layer, 11-temporary substrate, 12-pyrolytic glue unit, 121-pyrolytic glue, 122-pyrolytic glue cladding layer, 13-micro light-emitting chip, 131-electrode, 132-epitaxial layer bottom surface, 2-transfer head, 3-growth substrate, 4-display back plate, 41-bonding pad and 42-welding point.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the related technology, when the display panel is used in the later period and the display panel is in a certain water and oxygen condition, because the metal activity of the bonding pad is relatively strong, the welding point between the Micro-LED chip and the bonding pad is easy to oxidize, the resistance is increased after oxidation, the power consumption of the Micro-LED chip is increased, the heat production is increased, and the reliability of the Micro-LED chip is deteriorated until the Micro-LED chip is damaged.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
The present embodiment provides a temporary assembly of chips, as shown in fig. 1-1 to 1-2, which includes but is not limited to:
the temporary substrate 11, in this embodiment, the temporary substrate 11 may also be referred to as a temporary substrate or a transfer substrate, and the material thereof may be selected flexibly, for example, but not limited to, any one of glass, sapphire, quartz and silicon.
A pyrolytic adhesive layer formed by pyrolytic adhesive, wherein the pyrolytic adhesive layer is disposed on the front surface of the temporary substrate 11 (in this embodiment, the front surface of the temporary substrate 11 is a surface for carrying the micro light-emitting chip); the debonding temperature value of the thermal debonding in this embodiment is greater than or equal to the melting point value of the bonding pad bonded (also referred to as soldering) with the electrode of the micro light-emitting chip; the debonding temperature value of the pyrolytic gel in this embodiment refers to a critical temperature value at which the pyrolytic gel is heated to change the pyrolytic gel from a solid state or a semi-solid state to a liquid state, and after the pyrolytic gel is changed from the solid state or the semi-solid state to the liquid state, the fixing effect (also understood as bonding strength) of the pyrolytic gel to the micro light emitting chip bonded thereto is reduced or even minimized. It should be understood that, in the present embodiment, the material of the pyrolysis gel may be flexibly selected when the above conditions are satisfied, and is not limited thereto.
Referring to fig. 1-1 and 1-2, the thermal adhesive layer includes a plurality of thermal adhesive decomposition units 12, and each thermal adhesive decomposition unit 12 is separated from another thermal adhesive decomposition unit, that is, each adjacent thermal adhesive decomposition unit 12 is separated from another thermal adhesive decomposition unit, so that each thermal adhesive decomposition unit 12 is independent from another thermal adhesive decomposition unit.
The chip temporary assembly also comprises a plurality of micro light-emitting chips 13 arranged on the pyrolytic glue layer; it should be understood that the Micro light emitting chip 13 in the present embodiment may include, but is not limited to, at least one of a Micro-LED chip and a Mini-LED chip. Of course, the micro light-emitting chip 13 can be replaced by other chips, which will not be described herein.
The micro light emitting chip 13 in the present embodiment includes, but is not limited to, an epitaxial layer and an electrode 131, and the present embodiment does not limit the specific structure of the epitaxial layer of the micro light emitting chip, and in an example, the epitaxial layer of the micro light emitting chip 13 may include an N-type semiconductor, a P-type semiconductor, and an active layer located between the N-type semiconductor and the P-type semiconductor, and the active layer may include a quantum well layer, and may also include other structures. In other examples, the epitaxial layer may further optionally include at least one of a reflective layer and a passivation layer. The material and shape of the electrode 131 in this embodiment are not limited, and for example, the material of the electrode 131 may include but is not limited to at least one of Cr, ni, al, ti, au, pt, W, pb, rh, sn, cu, and Ag.
In an example of the present embodiment, a plurality of thermal gel units 12 correspond to a plurality of micro light-emitting chips 13 one by one, and the electrodes 131 of the plurality of micro light-emitting chips 13 are respectively embedded into the respective corresponding thermal gel units 12. Of course, it should be understood that, in some examples, the number of the thermal gel units 12 may also be greater than the number of the micro light-emitting chips 13, in this example, some of the thermal gel units 12 may not be provided with micro light-emitting chips, and the situation shown in this example belongs to the situation of equivalent replacement, and will not be described again here.
Referring to fig. 1-2, the electrodes 131 of the micro light-emitting chip 13 are embedded in the corresponding pyrolytic adhesive units 12, and a portion of pyrolytic adhesive exists between the electrodes 131, and when the micro light-emitting chip 13 is transferred from the temporary substrate 11, the portion of pyrolytic adhesive is heated (for example, when the temperature value thereof is greater than or equal to the debonding temperature value thereof) and then becomes liquid or semi-liquid, and is pulled away from the temporary substrate 11 by a pulling force applied to the front side far away from the temporary substrate 11 (due to the fact that the pyrolytic adhesive units 12 are arranged to be separated from each other, the portion of pyrolytic adhesive is more easily separated from the temporary substrate 11), and is separated from the temporary substrate 11 along with the micro light-emitting chip 13 and remains between the electrodes 131 of the micro light-emitting chip 13. For example, referring to fig. 1-3 and fig. 1-4, when the micro light-emitting chip 13 is picked up from the temporary substrate 11 by the transfer head 2 for transfer, a thermal release adhesive 121 remains between the electrodes 131 of the picked-up micro light-emitting chip 13; the shape of the portion of the thermal gel 121 is not limited herein. And it should be understood that the portion of the thermal gel 121 may be adhered to the electrode 131, the bottom surface 132 of the epitaxial layer (i.e. the surface of the micro light emitting chip 13 where the epitaxial layer is disposed on the electrode 131), or both the electrode 131 and the bottom surface 132 of the epitaxial layer.
Of course, it should be understood that the size and shape of the thermal gel unit 12 and the structure of the micro light emitting chip 13 embedded in the corresponding thermal gel unit 12 can be flexibly set. For ease of understanding, the present embodiments are described below in connection with several examples.
An example is shown in fig. 2, which differs from the chip temporary assembly shown in fig. 1-1 in that the line pitch of the thermal gel-breaking units 12 is larger; the shape of the orthographic projection of the thermal decomposition glue unit 12 on the temporary substrate 11 in fig. 1-1 and fig. 2 is matched with the shape of the orthographic projection of the corresponding micro light-emitting chip 13 on the temporary substrate 11, and the area of the orthographic projection of the thermal decomposition glue unit 12 on the temporary substrate 11 is larger than that of the orthographic projection of the micro light-emitting chip 13 on the temporary substrate 11. An example is shown in fig. 3-1 and 3-2, which differs from the chip temporary assembly shown in fig. 2 in that the column pitch of the thermal gel-breaking units 12 is larger.
Another example is shown in fig. 4-1 and 4-2, in this example, the shape and area of the orthographic projection of the thermal gel unit 12 on the temporary substrate 11 are matched with the shape and area of the orthographic projection of the corresponding micro light-emitting chip 13 on the temporary substrate 11. In other words, the shape of the orthographic projection of the thermal decomposition glue unit 12 on the temporary substrate 11 is the same or substantially the same as the shape of the orthographic projection of the corresponding micro light-emitting chip 13 on the temporary substrate 11; the area of the orthographic projection of the thermal glue-breaking unit 12 on the temporary substrate 11 is equal to or substantially equal to the area of the orthographic projection of the corresponding micro light-emitting chip 13 on the temporary substrate 11, that is, the area of the orthographic projection of the thermal glue-breaking unit 12 on the temporary substrate 11 may be slightly smaller or slightly larger than the area of the orthographic projection of the corresponding micro light-emitting chip 13 on the temporary substrate 11). In this example, compared to the chip temporary assembly shown in fig. 1-1 and 2, the line pitch and the column pitch of the thermal gel unit 12 are larger, so that the transfer is more convenient when the micro light-emitting chips 13 are transferred from the temporary substrate 11, and the thermal gel is better ensured to remain between the transferred micro light-emitting chips 13.
In an example of the embodiment, when the micro light-emitting chip 13 is embedded in the corresponding thermal gel unit 12, only the electrode 131 of the micro light-emitting chip 13 is embedded in the corresponding thermal gel unit 12, and the bottom surface 132 of the epitaxial layer of the micro light-emitting chip 13 is not in contact with the thermal gel unit 12, and at this time, after the portion of the thermal gel 121 between the electrodes 131 is heated to become liquid or semi-liquid, the portion of the thermal gel is still only bonded to the electrode 131, and is not bonded to the bottom surface 132 of the epitaxial layer. Of course, the distance between the epitaxial layer bottom surface 132 and the pyrolytic gel unit 12 can also be controlled appropriately, so that the part of the pyrolytic gel 121 between the electrodes 131 contacts with the epitaxial layer bottom surface 132 to realize adhesion after being heated and expanded, thereby increasing the adhesion area between the part of the pyrolytic gel 121 and the epitaxial layer bottom surface 132 of the micro light-emitting chip 13, and further facilitating the part of the pyrolytic gel 121 to be separated from the temporary substrate 11 and/or the pyrolytic gel of other parts of the pyrolytic gel unit 12 and remain between the electrodes 131.
In yet another example of the present embodiment, the bottom surface 132 of the epitaxial layer of the micro light emitting chip 13 is attached to the corresponding thermal gel unit 12, for example, as shown in fig. 3-2 and fig. 4-2, so as to increase the direct bonding area between the thermal gel unit 12 and the micro light emitting chip 13, and further facilitate the portion of the thermal gel 121 to be detached from the temporary substrate 11 and/or the thermal gel of the other portion of the thermal gel unit 12 and remain between the electrodes 131.
In yet another example of the present embodiment, the bottom surface 132 of the epitaxial layer of the micro light-emitting chip 13 is embedded into the corresponding thermal gel unit 12, for example, as shown in fig. 4-3, so as to increase the direct bonding area between the thermal gel unit 12 and the micro light-emitting chip 13, and further facilitate the portion of the thermal gel 121 to be separated from the temporary substrate 11 and/or the thermal gel of the other portion of the thermal gel unit 12 and remain between the electrodes 131.
In order to facilitate better understanding, the present embodiment will now be described by way of example with respect to a method for manufacturing the chip temporary assembly.
The method for manufacturing the temporary chip assembly provided by the embodiment comprises the following steps:
providing a temporary substrate;
arranging pyrolytic gel on the front surface of the temporary substrate to form a pyrolytic gel layer, and arranging a plurality of micro light-emitting chips on the pyrolytic gel layer; the arranged pyrolytic glue layer comprises a plurality of pyrolytic glue units which are mutually separated, and the pyrolytic glue units correspond to the micro light-emitting chips one by one; the electrodes of the micro light-emitting chips are respectively embedded into the corresponding pyrolytic gel units; after the pyrolytic glue unit is heated, the pyrolytic glue between the electrodes of the micro light-emitting chip is adhered on the micro light-emitting chip and separated from the temporary substrate along with the micro light-emitting chip 13. It should be understood that, in the present embodiment, the plurality of thermal gel units may be formed after transferring the micro light-emitting chips to the temporary substrate or before transferring the micro light-emitting chips to the temporary substrate, and for convenience of understanding, these two cases are respectively illustrated below.
Referring to fig. 5-1, several pyrolytic glue units are formed after transferring micro light-emitting chips to a temporary substrate, and the method for manufacturing the chip temporary assembly of this example includes:
s501: a temporary substrate is provided.
S502: and arranging a thermal adhesive layer on the front surface of the temporary substrate to form a whole pyrolytic adhesive layer.
For example, as shown in fig. 5-2 and 5-3, an entire layer of pyrolytic glue 10 is formed on the front surface of the temporary substrate 11. The process of forming the entire pyrolytic glue layer 10 on the front surface of the temporary substrate 11 is not limited in this embodiment, and for example, but not limited to, molding, screen printing, spraying, coating, etc. may be adopted. In an application scenario, the thickness of the entire pyrolytic glue layer 10 may be greater than or equal to the height of the electrodes of the micro light emitting chip.
S503: and a plurality of miniature light-emitting chips are arranged on the whole pyrolytic glue layer, and electrodes of the miniature light-emitting chips are embedded into the whole pyrolytic glue layer.
In this example, the micro light emitting chips can be transferred from the growth substrate or other substrates to the entire pyrolytic glue layer, and the transfer method can be flexibly adopted, and for the convenience of understanding, the following description is provided in connection with an application example.
In the present application example, referring to fig. 5 to 4, several micro light-emitting chips 13 are formed on a growth substrate 3. The manner of growing the micro light-emitting chips 13 on the growth substrate 3 is not limited in this application example. The material of the growth substrate 3 in this application example may be, but is not limited to, sapphire, silicon carbide, silicon, gallium arsenide, and may also be other semiconductor materials, and is not limited herein.
Referring to fig. 5-5, a surface of the growth substrate 3 on which the plurality of micro light-emitting chips 13 are formed is bonded to a surface of the temporary substrate 11 on which the entire pyrolytic adhesive layer 10 is formed, after the bonding, electrodes of the plurality of micro light-emitting chips 13 are embedded into the entire pyrolytic adhesive layer 10, and optionally, bottom surfaces of epitaxial layers of the plurality of micro light-emitting chips 13 are bonded to the entire pyrolytic adhesive layer 10, or embedded into the entire pyrolytic adhesive layer 10.
Referring to fig. 5-6, the growth substrate 3 is peeled, for example, but not limited to, the growth substrate 3 may be peeled by laser irradiation. The micro light-emitting chips 13 are bonded to the entire pyrolytic adhesive layer 10 after peeling, as shown in fig. 5-7 and 5-8.
S504: and taking the pyrolysis glue area corresponding to a single micro light-emitting chip as a unit, and dividing the whole pyrolysis glue layer to obtain a plurality of pyrolysis glue units which are in one-to-one correspondence with the plurality of micro light-emitting chips and are mutually separated.
In this example, the entire thermal glue layer may be separated by, but not limited to, cutting, etching (e.g., but not limited to, reactive ion etching) and the like. The resulting singulated pyrolytic gel units 12 are shown in, but not limited to, fig. 1-1 through 4-3.
Referring to fig. 6-1, several thermal glue-releasing units are formed before transferring the micro light-emitting chips to the temporary substrate, and the method for manufacturing the chip temporary assembly of this example includes:
s601: a temporary substrate is provided.
S602: and arranging a thermal adhesive layer on the front surface of the temporary substrate to form a whole pyrolytic adhesive layer. For example, referring to fig. 6-2, a full pyrolytic glue layer is formed on the temporary substrate 11.
S603: and cutting the whole pyrolytic glue layer to obtain a plurality of pyrolytic glue units which correspond to the micro light-emitting chips one by one and are mutually separated.
In this example, the entire pyrolytic glue layer can also be divided by, but not limited to, cutting, etching, and the like. The resulting singulated pyrolytic gum units 12 are shown in, but not limited to, fig. 6-3 through 6-4.
S604: and a plurality of micro light-emitting chips are respectively arranged on the plurality of pyrolysis glue units.
In this example, the micro light-emitting chips can be transferred from the growth substrate or other substrate to the thermal gel-breaking units by, but not limited to, the transfer method can be flexibly adopted, and for understanding, the following description is provided in connection with an application example.
Referring to fig. 6-5, a surface of the growth substrate 3 on which the micro light-emitting chips 13 are formed is bonded to a surface of the temporary substrate 11 on which the pyrolytic gel units 13 are formed, after the bonding, electrodes of the micro light-emitting chips 13 are embedded into the pyrolytic gel units 13, and optionally, bottom surfaces of epitaxial layers of the micro light-emitting chips 13 are bonded to the pyrolytic gel units 13, or embedded into the pyrolytic gel units 13.
Referring to fig. 6-6, the growth substrate 3 is peeled, for example, but not limited to, the growth substrate 3 may be peeled by laser irradiation. The micro light-emitting chip 13 is bonded to the thermal gel unit 13 after being peeled off, as shown in fig. 1-1 to 4-3.
It can be seen that, in the temporary assembly provided in this embodiment, a plurality of mutually separated pyrolytic glue units are formed on the temporary substrate, electrodes of a plurality of micro luminescent chips are respectively embedded into the respective pyrolytic glue units corresponding to each other to be fixed on the temporary substrate, and when the micro luminescent chips are transferred from the temporary substrate in the future, the pyrolytic glue units can be subjected to temperature control to be heated, and then the pyrolytic glue between the electrodes of the micro luminescent chips is adhered to the micro luminescent chips and separated from the temporary substrate along with the micro luminescent chips, so that the pyrolytic glue is remained between the electrodes of the micro luminescent chips transferred from the temporary substrate. After the electrode of the miniature light-emitting chip is welded with the corresponding bonding region of the chip, pyrolytic glue between the electrodes is heated and then becomes liquid, the pyrolytic glue coats the welding point between the electrode and the welding pad along the electrode flowing direction welding pad, and water and oxygen separation is realized, so that the oxidation of the welding point can be slowed down or avoided, the condition that the power consumption of the miniature light-emitting chip is increased or even loses efficacy due to the oxidation is avoided, and the reliability of the miniature light-emitting chip is improved.
Another alternative embodiment:
the embodiment provides a display panel, which comprises a display back plate and a plurality of micro light-emitting chips 13 transferred from the chip temporary assembly shown in the embodiment to the display back plate;
referring to fig. 7-1, the front surface of the display backplane 4 is provided with a driving circuit, the driving circuit includes a plurality of chip bonding regions corresponding to the plurality of micro light-emitting chips 13, and the chip bonding regions have pads 41 corresponding to the electrodes of the micro light-emitting chips 13.
Referring to fig. 7-2, after the micro light-emitting chip 13 is transferred from the temporary substrate 11 to the corresponding chip bonding region, the electrode 131 of the micro light-emitting chip 13 is bonded to the corresponding pad 41 in the chip bonding region, and a bonding point 42 is formed at the bonding position between the electrode 131 and the pad; referring to fig. 8, the pyrolytic glue 121 between the electrodes 131 of the micro light-emitting chip 13 is heated to become liquid, and flows along the electrodes 131 (i.e. by using the climbing rod effect of the glue under the thermal effect) to the bonding pads 41, so as to coat the bonding pads 42 between the electrodes 131 and the bonding pads 42, thereby forming a pyrolytic glue coating layer 122 including the bonding pads 42. This cladding layer 122 is glued in pyrolysis can realize that the water oxygen of welding point 42 keeps apart, can slow down or avoid welding point 42 oxidation to appear, avoids miniature luminous chip 13 to take place because of the condition that the increase of the consumption that the oxidation caused even became invalid, promotes miniature luminous chip 13's reliance.
The bonding pad 41 In this embodiment may be an In bonding pad, or a bonding pad made of other materials; or a pad made of composite material. For example, the end of the pad close to the display backplane 4 may not be In, and the end far from the display backplane 4 is In. Of course, it should be understood that the In material may be replaced with other materials.
It should be understood that the encapsulant covering 122 may cover only the bonding pad 42 in this embodiment, for example, as shown in fig. 9-1, or may cover at least a portion of the area of the electrode 131 above the bonding pad, and/or at least a portion of the area of the bonding pad below the bonding pad 42, for example, as shown in fig. 8. And in some examples, at least a portion of the pyrolytic gel coating 122 may also be in contact with the bottom surface of the epitaxial layer of the micro light-emitting chip 13, as shown in fig. 9-2.
According to the above examples, the shape of the pyrolytic gel coating 122 in the present embodiment can be varied, and is not limited to the shapes shown in the above examples, as long as it can coat the solder joint 42 to form water and oxygen insulation, and the present embodiment is not limited thereto. And it should be understood that the display backplane in this embodiment may be replaced with a lighting circuit board to make a lighting assembly.
For easy understanding, the present embodiment further provides a method for manufacturing a display panel shown in each of the above examples, as shown in fig. 10-1, including:
s1001: a display backplane and chip temporary assembly as shown in the above embodiments are fabricated.
Referring to fig. 7-1, in the present embodiment, the display backplane 4 may be an active display backplane or a passive display backplane, a driving circuit is disposed on a front surface of the display backplane 4, the driving circuit includes a plurality of chip bonding regions corresponding to a plurality of micro light-emitting chips 13, and pads 41 corresponding to electrodes of the micro light-emitting chips 13 are disposed in the chip bonding regions; the bonding pad 41 may be an indium bonding column.
S1002: and transferring the micro luminous core from the temporary substrate to the corresponding chip bonding area to complete bonding. After bonding is completed, the electrodes of the micro light-emitting chips are welded with the corresponding bonding pads in the chip bonding area, the pyrolytic glue between the electrodes of the micro light-emitting chips is heated to be changed into liquid, and the pyrolytic glue flows to the bonding pads along the electrodes to coat the welding points between the electrodes and the bonding pads.
For ease of understanding, the following description will be given by taking as an example the process of transferring the micro-luminescent cores from the temporary substrate into the corresponding chip bonding areas. Referring to fig. 10-2, by attaching the transfer head 2 to the corresponding micro light-emitting chip 13 on the temporary substrate 11, pick-up Pick & Place was performed by van der waals force bulk transfer technique. In the process of picking up the micro light-emitting chip 13, the thermal gel between the electrodes 131 of the micro light-emitting chip 13 is temperature-controlled, so that the thermal gel becomes soft (i.e. becomes liquid), and then the micro light-emitting chip 13 is transferred from the temporary substrate 11 by the transfer head 2, and in the process of detaching the micro light-emitting chip 13 from the temporary substrate 11, the thermal gel between the electrodes of the micro light-emitting chip 13 is softened and then under the action of a pulling force in a direction away from the temporary substrate 11, so that the part of the thermal gel remains on the micro light-emitting chip 13, as shown in fig. 10-3.
In one example of this embodiment, the debonding temperature value of the thermal debonding may be set equal to the melting point value of the bonding pad; while the micro light-emitting chips 13 are transferred from the temporary substrate 11 to the corresponding chip bonding regions to complete bonding, that is, while the electrodes of the micro light-emitting chips 13 are welded to the bonding pads 41, the pyrolytic glue 121 between the electrodes 131 of the micro light-emitting chips 13 is heated to be in a liquid state, so that the glue flows to the bonding pads 41 along the electrodes to coat the welding points between the electrodes 131 and the bonding pads 41. In this example, while the soldering land 41 is heated to melt to be soldered to the electrode 131, the pyrolytic glue between the electrodes of the micro light-emitting chip 13 may be heated to become liquid; of course, the pad 41 may be preheated to be melted before transferring the micro light emitting chip 13, and after the chip is picked up from the temporary substrate 11 and transferred to the corresponding chip bonding region, the pyrolytic glue 121 between the electrodes of the micro light emitting chip 13 is heated to become liquid in the process of bonding the electrode 131 and the pad 41; thus, during the process of bonding the electrode 131 to the pad 41, the thermal gel 121 flows along the electrode 131 to the pad 41 to cover the bonding point 42 between the electrode 131 and the pad 41, for example, as shown in fig. 10-5.
In another example of this embodiment, the debonding temperature value of the thermal debond may be set to be greater than the melting point value of the pad. In this example, after the electrode 131 of the micro light-emitting chip 13 is soldered to the corresponding pad 41 in the chip bonding region, the pyrolytic adhesive between the electrodes 131 of the micro light-emitting chip 13 is heated (i.e., reflowing the micro light-emitting chip) to be in a liquid state, and flows along the electrode 131 to the pad 41, so as to cover the soldering point 42 between the electrode 131 and the pad 41. For example, referring to fig. 10-4, the bonding pad 42 is formed after the electrode 131 of the micro light-emitting chip 13 is bonded to the corresponding bonding pad 41 in the chip bonding region. After the electrodes 11 of the micro light-emitting chips 13 are soldered to the corresponding bonding pads 41 in the chip bonding region, the pyrolytic glue between the electrodes of the micro light-emitting chips 13 is heated to become liquid so as to coat the solder joints 42, for example, as shown in fig. 10-5.
In an application scenario, timing may be started after the electrode 131 of the micro light-emitting chip 13 and the corresponding bonding pad 41 in the chip bonding region are welded, and after a timing value reaches a preset time threshold, the pyrolytic gel between the electrodes 131 of the micro light-emitting chip 13 is heated to be in a liquid state; the value of the preset time threshold in this embodiment can be flexibly set, for example, but not limited to, it can be set to be greater than or equal to 10 seconds, and less than or equal to 30 seconds.
In an example of the embodiment, the micro light-emitting chip 13 may be picked up from the temporary substrate 11 by, but not limited to, the transfer head 2 and transferred into the corresponding chip bonding region, and the thermal decomposition adhesive 121 between the electrodes of the micro light-emitting chip 13 may be heated by the transfer head 2, so that the temperature value of the thermal decomposition adhesive 121 is greater than or equal to the de-bonding temperature value. Of course, in some examples, the thermal decomposition paste 121 between the electrodes of the micro light emitting chip 13 may not be heated by the transfer head 2, and the thermal decomposition paste 121 may be heated by other methods.
The display panel that this embodiment of can see out provided, the welding point that corresponds the pad on its miniature luminous chip and the display backplate is glued the cladding of cladding layer by the pyrolysis, but this pyrolysis glue cladding layer separation water oxygen to slow down or avoid the welding point oxidation to appear, promote miniature luminous chip's reliability, promote display panel's yields and reliability.
Yet another alternative embodiment:
the embodiment also provides a display screen, which comprises a frame and the display panel as shown above; the display panel is fixed on the frame. The reliability of the photoinduced device of the display screen is better, the reliability and the yield of products are higher, and the display screen can be applied to but not limited to various intelligent mobile terminals, vehicle-mounted terminals, PCs, displays, electronic advertising boards and the like.
This embodiment still provides a tiled display screen, forms including this tiled display screen accessible at least two as above shown display screen concatenation.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A chip temporary assembly, comprising:
a temporary substrate;
the pyrolysis glue layer is formed by pyrolysis glue and is arranged on the front surface of the temporary substrate;
and a plurality of micro light-emitting chips arranged on the pyrolytic glue layer;
the pyrolytic glue layer comprises a plurality of pyrolytic glue units which are mutually separated, and the pyrolytic glue units correspond to the micro light-emitting chips one by one; the electrodes of the micro light-emitting chips are respectively embedded into the corresponding pyrolytic gel units; after the pyrolytic glue unit is heated, the pyrolytic glue between the electrodes of the micro light-emitting chip is adhered on the micro light-emitting chip and is separated from the temporary substrate along with the micro light-emitting chip; and the debonding temperature value of the thermal debonding is greater than or equal to the melting point value of the bonding pad bonded with the electrode.
2. The chip temporary assembly of claim 1, wherein the shape and area of the orthographic projection of the thermal glue-breaking unit on the temporary substrate are matched with the shape and area of the orthographic projection of the corresponding micro light-emitting chip on the temporary substrate.
3. The chip temporary assembly according to claim 1 or 2, wherein the epitaxial layer of the micro light emitting chip is disposed on one surface of the electrode, and is attached to or embedded in the corresponding thermal release unit.
4. A display panel comprising a display backplane and the plurality of micro light-emitting chips transferred onto the display backplane from the chip temporary assembly of any one of claims 1-3;
a driving circuit is arranged on the front surface of the display back plate and comprises a plurality of chip bonding areas corresponding to the micro light-emitting chips, and bonding pads corresponding to electrodes of the micro light-emitting chips are arranged in the chip bonding areas;
after the micro light-emitting chips are transferred from the temporary substrate into the corresponding chip bonding regions, electrodes of the micro light-emitting chips are welded with the corresponding bonding pads in the chip bonding regions, pyrolytic glue between the electrodes of the micro light-emitting chips is heated to be in a liquid state, flows to the bonding pads along the electrodes, and coats the welding points between the electrodes and the bonding pads.
5. A method of fabricating a temporary chip assembly, comprising:
providing a temporary substrate;
arranging pyrolytic gel on the front surface of the temporary substrate to form a pyrolytic gel layer, and arranging a plurality of micro light-emitting chips on the pyrolytic gel layer;
the arranged pyrolytic glue layer comprises a plurality of pyrolytic glue units which are separated from each other, and the pyrolytic glue units correspond to the micro light-emitting chips one by one; the electrodes of the micro light-emitting chips are respectively embedded into the corresponding pyrolytic gel units; after the pyrolytic glue unit is heated, the pyrolytic glue between the electrodes of the micro light-emitting chip is adhered on the micro light-emitting chip and is separated from the temporary substrate along with the micro light-emitting chip; and the debonding temperature value of the thermal debonding is greater than or equal to the melting point value of the bonding pad bonded with the electrode.
6. The method of claim 5, wherein disposing a pyrolytic glue on the front side of the temporary substrate to form a pyrolytic glue layer, and disposing a plurality of micro light emitting chips on the pyrolytic glue layer comprises:
arranging a thermal adhesive layer on the front surface of the temporary substrate to form a whole pyrolytic adhesive layer;
arranging a plurality of micro light-emitting chips on the whole pyrolytic glue layer, wherein electrodes of the micro light-emitting chips are embedded in the whole pyrolytic glue layer;
and taking the pyrolysis adhesive area corresponding to a single micro light-emitting chip as a unit, and dividing the whole pyrolysis adhesive layer to obtain a plurality of pyrolysis adhesive units which correspond to the micro light-emitting chips one by one and are mutually separated.
7. The method of claim 5, wherein disposing a pyrolytic adhesive on the front side of the temporary substrate to form a pyrolytic adhesive layer, and disposing the micro light-emitting chips on the pyrolytic adhesive layer comprises:
arranging a thermal adhesive layer on the front surface of the temporary substrate to form a whole pyrolytic adhesive layer;
cutting the whole pyrolytic glue layer to obtain a plurality of pyrolytic glue units which correspond to the micro light-emitting chips one by one and are mutually separated;
and respectively arranging the plurality of micro light-emitting chips on the plurality of pyrolysis glue units.
8. The method for manufacturing a display panel according to claim 4, comprising:
fabricating a display backplane and a chip temporary assembly as claimed in any one of claims 1 to 3; a driving circuit is arranged on the front surface of the display back plate and comprises a plurality of chip bonding areas corresponding to the micro light-emitting chips, and bonding pads corresponding to the electrodes of the micro light-emitting chips are arranged in the chip bonding areas;
and transferring the micro light-emitting chip from the temporary substrate to the corresponding chip bonding area to complete bonding, welding the electrode of the micro light-emitting chip and the corresponding bonding pad in the chip bonding area after bonding is completed, heating the pyrolytic gel between the electrodes of the micro light-emitting chip to be liquid, flowing to the bonding pad along the electrode, and coating the welding point between the electrode and the bonding pad.
9. The method for manufacturing a display panel according to claim 8, wherein a debonding temperature value of the thermal debonding is equal to a melting point value of the bonding pad; the transferring the micro light-emitting chips from the temporary substrate to the corresponding chip bonding regions to complete bonding comprises:
heating the bonding pad to melt the bonding pad so as to be welded with the electrode, heating the pyrolytic glue between the electrodes of the micro light-emitting chip to change the pyrolytic glue into liquid, and in the welding process of the electrode and the bonding pad, the pyrolytic glue which is changed into the liquid flows to the bonding pad along the electrode to coat the welding point between the electrode and the bonding pad.
10. The method for manufacturing a display panel according to claim 8, wherein a debonding temperature value of the thermal debonding is greater than a melting point value of the bonding pad; the transferring the micro light-emitting chips from the temporary substrate to the corresponding chip bonding regions to complete bonding comprises:
and after the electrodes of the micro light-emitting chips are welded with the corresponding bonding pads in the bonding areas of the chips, heating the pyrolytic glue between the electrodes of the micro light-emitting chips to change the pyrolytic glue into liquid, flowing to the bonding pads along the electrodes, and coating the welding points between the electrodes and the bonding pads.
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| CN202110517356.2A CN115347085A (en) | 2021-05-12 | 2021-05-12 | Chip temporary assembly, display panel and manufacturing method thereof |
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| CN202110517356.2A CN115347085A (en) | 2021-05-12 | 2021-05-12 | Chip temporary assembly, display panel and manufacturing method thereof |
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