CN112047297B - Micro-area heating array capable of positioning and controlling temperature and application method of selective transfer semiconductor micro-nano integrated element - Google Patents
Micro-area heating array capable of positioning and controlling temperature and application method of selective transfer semiconductor micro-nano integrated element Download PDFInfo
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- CN112047297B CN112047297B CN202010913805.0A CN202010913805A CN112047297B CN 112047297 B CN112047297 B CN 112047297B CN 202010913805 A CN202010913805 A CN 202010913805A CN 112047297 B CN112047297 B CN 112047297B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
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Abstract
The invention provides a micro-area heating array capable of positioning and controlling temperature and a use method of a selective transfer semiconductor micro-nano integrated element thereof, wherein the micro-area heating array comprises: electrode layer I, electrode layer II, n microcell heating units, n ≡64, wherein electrode layer I includes n electrode I array and lead I part, electrode layer II includes n electrode II array and lead II part. The micro-area heating array capable of positioning and controlling temperature can control the temperature of a designated position in the array; the micro-area heating array capable of positioning and controlling temperature has an independent temperature control driving function and an independent semiconductor micro-nano integrated element driving function; the semiconductor micro-nano integrated element can be selectively transferred, so that the problems of mass and selective transfer, removal, welding and repair of the semiconductor elements are solved; is beneficial to improving the production yield and the work of later maintenance.
Description
Technical Field
The present invention relates to a micro-area heating array technology, and more particularly, to a positionable temperature-controlled micro-area heating array technology for selectively transferring semiconductor micro-nano integrated elements, which can transfer, remove, weld and repair elements at a single or multiple positions at a designated position in a micro-nano integrated array.
Background
Since the 60 s of the 20 th century, the element integration of large-scale integrated circuits has been rapidly advanced at a speed of doubling every 18 months on average according to Moore's law, and miniaturization and high-density integration of devices have been advancing. However, integration and packaging problems are one of the major obstacles to commercialization of micro-integrated devices such as radio frequency micro-electromechanical systems (MEMS) micro-switches, light emitting diode display systems, MEMS or quartz oscillators. Among them, the transfer of cells and yield are critical to such small-sized, high-density integrated devices. Conventional transfer techniques use a die-by-die approach. The method for die bonding one by one is very limited in the process of transferring a large amount of chips, and is also deficient in the aspects of arrangement uniformity, high consistency and high repeatability of integrated units, so that dead points are easy to occur. Aiming at the huge transfer of chips, the LED field currently utilizes electrostatic force, van der Waals force and magnetic force to grasp huge Micro LED units, and utilizes laser selective release, fluid self-assembly technology and transfer technology to realize the transfer work of the huge Micro LED units. However, the above-described integration technique is only suitable for one-time transfer and assembly processes, and selective transfer is not possible after unit integration. For bad points, positioning removal, welding and repairing cannot be achieved, and the yield of chips and the work of later maintenance are difficult to ensure.
Disclosure of Invention
The present invention is directed to a micro-area heating array capable of positioning and controlling temperature and a method for using the same to selectively transfer semiconductor micro-nano integrated devices, so as to solve the above-mentioned problems in the prior art.
In order to achieve the above purpose, the present invention provides the following technical solutions: a positionable temperature-controlled micro-zone heating array comprising a micro-zone heating array and a program control system, said micro-zone heating array comprising: the electrode layer I comprises an array of n electrodes I and a lead I part, and the electrode layer II comprises an array of n electrodes II and a lead II part;
The micro-zone heating unit comprises the following structure: a substrate; an electrode I disposed on the substrate; the heating layer I is arranged on the electrode I and is made of an electric heating material; the insulating layer I is covered on the substrate, the electrode I and the heating layer I, the main purpose of the insulating layer I is to isolate the electrode I from the electrode II, the insulating layer I is provided with a hollowed-out part, and part or all of the heating layer I is exposed out of the hollowed-out part; the electrode II is arranged above the insulating layer I, and the electrode II does not cover the hollowed-out part of the insulating layer I; the heating layer II is arranged on the electrode II and is made of an electric heating material; the insulating layer II is arranged above the insulating layer I and the electrode II, the insulating layer II does not cover the hollowed-out part of the insulating layer I, and the hollowed-out part of the insulating layer II is provided with a heating layer II; the bonding layers are arranged in the hollowed-out parts of the insulating layer I and the hollowed-out parts of the insulating layer II, the bonding layers are conductive materials and thermoplastic materials with melting points lower than those of the electrodes I and II, and the bonding layers are in direct contact with the heating layer I and the heating layer II to form contacts;
the program control system is a circuit control system edited by a program, an electrode I and an electrode II which are communicated with a single or a plurality of micro-area heating units form a loop, a specified electrical signal is applied to the communicated micro-area heating units, the temperature is regulated and controlled, and the bonding layer is melted and solidified to selectively transfer the corresponding semiconductor micro-nano integrated elements on the micro-area heating units.
In order to obtain better heat insulation in the microcell heating unit, the insulating layers I and II are preferably low heat conduction dielectric materials, including one or more of ：SiO2、GaN、AlN、TiO2、ZnO、ZrO2、ThO2、Al2O3、Cr2O3、CeO2、AlF3、CeF3、HfF4、ScF3、YF3、ScF3、ThF3、LaF3、MgF2、ZnS、Ta2O5.
Preferably, the adhesive layer is made of conductive material and thermoplastic material with melting point lower than 300 ℃, and comprises: in, bi, sn, ag, cu, au, ga, sn, and one or a combination of PMMA, POM, PBT, PCL, PET, PC, PE, PEEK, PLA, PP, PS, PVDC.
The micro-zone heating array can use an external circuit as part of the electrode layer I and the electrode layer II to integrate n micro-zone heating units to form the array, or can use an in-situ manufacturing method to directly manufacture the electrode layer I, the electrode layer II and the n micro-zone heating units on the substrate to form the micro-zone heating array.
In order to provide better thermal insulation between the microcell heating units, the substrate preferably has a single or a plurality of independent steps on which the microcell heating units are arranged.
In order to make the micro-area heating array capable of positioning and controlling temperature have independent temperature control driving function and independent semiconductor micro-nano integrated element driving function, and distinguish the two using methods by adjusting the positive and negative polarities of the electric signals or the intensity of the electric signals, the control loops driven by the temperature control driving and the semiconductor micro-nano integrated element can share a group of loops, or two or more groups of control loops can be independently arranged, wherein under the condition of sharing one group of loops, the micro-area heating array capable of positioning and controlling temperature needs to be connected with the electrodes of the semiconductor micro-nano integrated element to form a loop.
Further, the temperature control drive and the semiconductor micro-nano integrated element drive share a group of loops and share a group of contacts, the heating layer I and the heating layer II are conductive electric heating materials, and the heating layer I and the heating layer II comprise ITO, AZO, IGZO, and one or more of the micro-area heating array, the program control system and the semiconductor micro-nano integrated element are introduced into the rectifying element. One or more of the semiconductor micro-nano integrated elements are introduced into the rectifying element and comprise NPN and PNP structures of the semiconductor micro-nano integrated elements. Further preferably, the rectifying element is a zener diode.
Further, the temperature control drive and the semiconductor micro-nano integrated element drive are arranged into two or more independent control loops and share one group of contacts, the heating layer I and the heating layer II are conductive electric heating materials and comprise ITO, AZO, IGZO, one or two of the heating layer I and the heating layer II are at least added with one electrode, the heating layer I and the heating layer II are provided with the independent control loops, and the semiconductor micro-nano integrated element is not required to be externally connected for temperature control, so that the temperature control drive of the micro-zone heating array capable of positioning and controlling the temperature is controlled by one group of loops, and the semiconductor micro-nano integrated element drive is controlled by the other group of loops.
Further, the temperature control drive and the semiconductor micro-nano integrated element drive are arranged into two or more independent control loops without sharing contacts, the heating layer I and the heating layer II can be conductive electric heating materials or nonconductive electric heating materials, the micro-area heating unit is adjusted to have at least one contact to participate in the temperature control drive, the semiconductor micro-nano integrated element drive is completed by two or more other electrodes, so that the temperature control drive of the micro-area heating array capable of positioning and controlling the temperature is controlled by one set of loops, and the semiconductor micro-nano integrated element drive is controlled by the other set of loops.
Further, the micro-area heating array can be driven passively as described above, or a heating layer and an adhesive layer can be disposed on the active driving circuit.
The application method of the micro-area heating array capable of positioning and controlling temperature, which selectively transfers the semiconductor micro-nano integrated element, comprises the following steps: a transfer process in which the component at the specified position is moved from one position to another position; a removal process for removing the element at the specified position from the original position; a soldering process of soldering the component at the specified position; and repairing the element at the designated position.
The micro-area heating array capable of being positioned and controlled in temperature can be used in a selective transfer process of single or batch semiconductor micro-nano integrated elements, and preferably, a program control system is communicated with single or multiple micro-area heating units at designated positions, the micro-area heating units at designated positions heat bonding layers, and the bonding layers are melted; the micro-area heating array capable of positioning and controlling temperature is contacted with a group of semiconductor micro-nano integrated elements on the receiving substrate, and the semiconductor micro-nano integrated elements are pressed into the melted bonding layer; the program control system disconnects the connection passage of the micro-area heating unit, and the bonding layer is solidified; the micro-area heating array capable of positioning and controlling temperature picks up the semiconductor micro-nano integrated element at the designated position and contacts with another group of receiving substrates; the program control system is communicated with a single or a plurality of micro-area heating units at the designated positions, the micro-area heating units at the designated positions heat the bonding layer, and the bonding layer is melted; the micro-area heating array capable of positioning and controlling temperature is separated from the receiving substrate, and the placing process of the semiconductor micro-nano integrated element is completed.
The micro-area heating array capable of positioning and controlling the temperature can be used in a selective welding process of single or batch semiconductor micro-nano integrated elements, preferably, the micro-area heating array capable of positioning and controlling the temperature is aligned and contacted with the semiconductor micro-nano integrated elements, so that electrodes of the semiconductor micro-nano integrated elements are aligned with the bonding layer, and for the inverted semiconductor micro-nano integrated elements, a one-time transfer technology is selected, so that the electrodes of the semiconductor micro-nano integrated elements are exposed outside; the program control system is communicated with a single or a plurality of micro-area heating units at the designated positions, the micro-area heating units at the designated positions heat the bonding layer, and the bonding layer is melted; the program control system disconnects the connection passage of the micro-area heating unit, and the bonding layer is solidified; and (5) completing the welding process of the semiconductor micro-nano integrated element at the designated position.
The micro-area heating array capable of being positioned and controlled in temperature can be used in a selective removal process of single or batch semiconductor micro-nano integrated elements, preferably, the semiconductor micro-nano integrated elements are welded on the micro-area heating array capable of being positioned and controlled in temperature, a program control system is communicated with single or multiple micro-area heating units at designated positions, the micro-area heating units at designated positions heat bonding layers, and the bonding layers are melted; and picking up the semiconductor micro-nano integrated element at the melting position of the bonding layer by using a transfer technology, and completing the removal process of the semiconductor micro-nano integrated element, wherein the transfer technology can be a non-selective transfer technology.
The micro-area heating array capable of being positioned and controlled in temperature can be used in a selective repair process of single or batch semiconductor micro-nano integrated elements, preferably, the semiconductor micro-nano integrated elements are welded on the micro-area heating array capable of being positioned and controlled in temperature, a program control system is communicated with single or multiple micro-area heating units at designated positions, a driving function of the semiconductor micro-nano integrated elements is started, bad points are tested, and positions are determined; removing the semiconductor micro-nano integrated element at the dead point position by utilizing the selective removing process of the semiconductor micro-nano integrated element by the micro-zone heating array capable of positioning and controlling the temperature; utilizing the selective welding process of the micro-area heating array capable of positioning and controlling the temperature to weld a new semiconductor micro-nano integrated element on the removed dead point position; and (5) completing the selective repair of the semiconductor micro-nano integrated element.
The beneficial effects of the invention are as follows:
The micro-area heating array capable of positioning and controlling temperature can control the temperature of a designated position in the array; the micro-area heating array capable of positioning and controlling temperature has an independent temperature control driving function and an independent semiconductor micro-nano integrated element driving function; the semiconductor micro-nano integrated element can be selectively transferred, so that the problems of mass and selective transfer, removal, welding and repair of the semiconductor elements are solved; is beneficial to improving the production yield and the work of later maintenance.
Drawings
Some preferred embodiments of the invention will now be described, by way of example only, with reference to the accompanying drawings, in which:
FIG. 1 illustrates an exemplary block diagram summarizing a microcell heating unit according to the present invention;
FIG. 2 shows a micro-zone heating unit with a substrate having independent steps;
FIG. 3 shows a schematic and perspective view of an 8×8 micro-zone heating array;
FIG. 4 is a schematic diagram of a circuit in which the temperature controlled drive and the semiconductor micro-nano integrated device drive share a set of loops, share a set of contacts, and are controlled individually by different electrical signals;
FIG. 5 shows a schematic and perspective view of another 8×8 micro-zone heating array;
FIG. 6 shows a schematic circuit diagram of a temperature controlled drive and a semiconductor micro-nano integrated element drive arranged in two separate sets of loop controls, sharing a set of contacts, and controlling the temperature controlled drive and the semiconductor micro-nano integrated element drive individually;
FIG. 7 illustrates a schematic diagram of a localized temperature controllable micro-zone heating array heating a bond layer at a specified location;
FIG. 8 illustrates a selective transfer process of a positionable temperature controllable Micro-area heating array to Micro LED elements;
FIG. 9 shows the distribution of Micro LED elements of three colors red, blue, and green bonded by a Micro-area heating array capable of positional temperature control;
FIG. 10 illustrates a process for preparing red, blue, and green three-color Micro LED light modules using a positionable temperature controllable Micro-area heating array;
FIG. 11 illustrates a positionable temperature controllable Micro-area heating array locking Micro LED bad part position;
FIG. 12 illustrates a process for repairing Micro LED bad parts using a positionable temperature controllable Micro-zone heating array.
Illustration of: 100. a micro-zone heating unit; 101. a substrate; 102. an electrode I; 103. a heating layer I; 104. an insulating layer I; 105. an electrode II; 106. heating layer II; 110. an insulating layer II; 111. an insulating layer II covering the electrode I and the insulating layer I; 112. an insulating layer II covering the heating layer I and the insulating layer I; 113. an insulating layer II covering the electrode II; 114. an insulating layer II covering the heating layer II; 115. an insulating layer II covering the substrate step and the insulating layer I;107A, tie layer I;107B, tie layer II; 200. a micro-area heating array; 210. electrode layer I, including 211-218 word lines; 220. electrode layer II, including 221-228 bit lines; 001. a program control system; 002. a semiconductor micro-nano integrated element; 003. a rectifying element; 300. micro LED element; 301. micro LED electrode I; 302. micro LED electrode II; 400. a primary substrate; 500. receiving a substrate; 310. a red Micro LED element; 320. a green Micro LED element; 330. blue Micro LED element; 340. and (5) a bad part.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements throughout or elements having like or similar functionality. The embodiments described below by way of the drawings are exemplary only and should not be construed as limiting the invention.
Example 1
The invention provides a micro-zone heating unit. The structure is shown in FIG. 1, and the substrate 101 has dimensions of 20 μm by 60. Mu.m; the thickness of the electrode I102 is 200nm, the width is 10 mu m, and the electrode I can be connected with an external circuit; the thickness of the heating layer I103 was 30nm, and the dimensions were 12 μm by 17. Mu.m; the thickness of the insulating layer I104 is 30nm, and the hollowed-out size is 10 mu m multiplied by 15 mu m; the thickness of the electrode II105 is 200nm, the width is 10 mu m, and the electrode II can be connected with an external circuit; the thickness of the heating layer II106 was 30nm and the dimensions were 12 μm by 17. Mu.m; the thickness of the insulating layer II110 is 30nm, the hollowed-out size is 10 mu m multiplied by 15 mu m, the insulating layer II comprises an insulating layer II111 covered on the electrode I102 and the insulating layer I104, an insulating layer II112 covered on the heating layer I103 and the insulating layer I104, an insulating layer II113 covered on the electrode II105 and an insulating layer II114 covered on the heating layer II 106; the hollowed-out parts on the heating layer I103 and the heating layer II106 are respectively provided with a bonding layer I107A and a bonding layer II107B, the length, the width and the height of the bonding layer I107A are 13 mu m, 8 mu m and 100nm, and the length, the width and the height of the bonding layer II107B are 13 mu m, 8 mu m and 70nm.
Example two
The invention provides a micro-zone heating unit. The structure is shown in FIG. 2, the substrate 101 has dimensions of 20 μm by 60 μm and has convex steps of 17 μm, 12 μm and 100nm in length, width and height respectively; the structure is shown in FIG. 1, and the substrate 101 has dimensions of 20 μm by 60. Mu.m; the thickness of the electrode I102 is 200nm, the width is 10 mu m, and the electrode I can be connected with an external circuit; the thickness of the heating layer I103 was 30nm, and the dimensions were 12 μm by 17. Mu.m; the thickness of the insulating layer I104 is 30nm, and the hollowed-out size is 10 mu m multiplied by 15 mu m; the thickness of the electrode II105 is 200nm, the width is 10 mu m, and the electrode II can be connected with an external circuit; the thickness of the heating layer II106 was 30nm and the dimensions were 12 μm by 17. Mu.m; the thickness of the insulating layer II110 is 30nm, the hollowed-out size is 10 mu m multiplied by 15 mu m, the insulating layer II comprises an insulating layer II111 covered on the electrode I102 and the insulating layer I104, an insulating layer II112 covered on the heating layer I103 and the insulating layer I104, an insulating layer II113 covered on the electrode II105 and an insulating layer II114 covered on the heating layer II 106; the hollowed-out parts on the heating layer I103 and the heating layer II106 are respectively provided with a bonding layer I107A and a bonding layer II107B, the length, the width and the height of the bonding layer I107A are 13 mu m, 8 mu m and 100nm, and the length, the width and the height of the bonding layer II107B are 13 mu m, 8 mu m and 70nm.
Example III
The invention provides a micro-zone heating unit. The structure of which is shown in fig. 1 and 2, the substrate 101 is a Si substrate; depositing a Cr/Au alloy film on a Si substrate by utilizing an electron beam evaporation method, and preparing an electrode I102 of the Cr/Au alloy by utilizing a photoetching mode; preparing a heating layer I103 of ITO material on the electrode I102 by using a film deposition and etching method; preparing a GaN film by using a film deposition method, and hollowing out by using an etching method to form an insulating layer I104; depositing a Cr/Au alloy film on the insulating layer I104 by utilizing an electron beam evaporation method, and preparing an electrode II105 of the Cr/Au alloy by utilizing a photoetching mode; preparing a heating layer II106 of the ITO material by using a film deposition and etching method; preparing a GaN film by using a film deposition method, and hollowing out by using an etching method to form an insulating layer II110; the bonding layer adopts AuSn alloy.
Example IV
The invention provides a micro-zone heating unit. The structure of the substrate 101 is shown in fig. 1 and 2, and an Al 2O3 substrate is adopted as the substrate 101; depositing a TiW alloy film on an Al 2O3 substrate by utilizing an electron beam evaporation method, and preparing an electrode I102 of the TiW alloy by adopting an etching mode; preparing a heating layer I103 of the IGZO material on the electrode I102 by using a film deposition and etching method; preparing an AlN film by using a film deposition method, and hollowing out by using an etching method to form an insulating layer I104; depositing a TiW alloy film on the insulating layer I104 by utilizing an electron beam evaporation method, and preparing an electrode II105 of the TiW alloy by utilizing a photoetching mode; preparing a heating layer II106 of the IGZO material by using a film deposition and etching method; preparing an AlN film by using a film deposition method, and hollowing out by using an etching method to form an insulating layer II110; the bonding layer adopts InBiSn alloy.
Example five
The invention provides an 8 multiplied by 8 micro-area heating array, which is characterized in that a temperature control drive and a semiconductor micro-nano integrated element drive share a group of loops and share a group of contacts. The structure of the micro-area heating array is shown in fig. 3, and the electrode layer I210, the electrode layer II220 and the 64 micro-area heating units 100 are directly manufactured on the substrate by adopting an in-situ manufacturing method to form the micro-area heating array 200. To facilitate understanding of the distribution of electrode layers I and II in the microcell heating array, a perspective view is shown on the right side of fig. 3, wherein electrode layer I210 is in a comb-like structure. The electrode layer I and the electrode layer II are connected with a program control system. To illustrate the location of the micro-heating elements that receive instructions, the 211-218 word lines and 221-228 bit lines are labeled.
Example six
The invention provides an 8 multiplied by 8 micro-area heating array capable of positioning and controlling temperature, which is characterized in that temperature control driving and semiconductor micro-nano integrated element driving share a group of loops and a group of contacts, and the temperature control driving and the semiconductor micro-nano integrated element driving are independently controlled by different electric signals. The micro-area heating array structure is shown in fig. 3, and a schematic circuit of signal control is shown in fig. 4. Fig. 4 shows a circuit control of the micro-area heating units in the first row and the first column in fig. 3, where 001 is a program control system, 002 is a semiconductor micro-nano integrated device, and 003 is a rectifying device. Integrating the rectifying element 003 with the micro-area heating unit 100 in the figure can be achieved by introducing a zener diode between the two electrodes of the micro-area heating unit; the rectifier element 003 and the semiconductor micro-nano integrated element 002 in the figure are integrated into a whole, and can be realized by a semiconductor micro-nano integrated element with NPN and PNP structures. As shown in fig. 4, the bonding layer II107B is connected to the positive electrode of the circuit, and the voltage drop is mainly on the bonding layer I107A and the bonding layer II107B, so as to realize regulation and control of the unit temperature; when the bonding layer I107A is connected with the positive electrode of the circuit, the voltage drop is mainly in the semiconductor micro-nano integrated element 002, so that the semiconductor micro-nano integrated element is driven.
Example seven
The invention provides an 8 x 8 micro-area heating array capable of positioning and controlling temperature, wherein a temperature control drive and a semiconductor micro-nano integrated element drive are arranged into two independent groups of loop control and share one group of contacts, the structure is as shown in fig. 5, and an electrode layer I210, an electrode layer II220 and 64 micro-area heating units 100 are directly manufactured on a substrate by adopting an in-situ manufacturing method to form a micro-area heating array 200. Wherein electrode layer II220 is divided into 220A and 220B, and for ease of understanding the distribution of electrode layer I and electrode layer II in the micro-area heating array, a perspective view is shown on the right side in fig. 5, wherein electrode layer I210 and electrode layer II220 are in a comb-like structure. Electrode layer I210 and electrode layer II220 are connected to a program control system. 220A and 220B are connected, 210 and 220B are connected to control loop to control driving of temperature control, 220A and 210 are connected to control driving of semiconductor micro-nano integrated element. FIG. 6 shows a circuit control of the first row and first column of microcell heating units of FIG. 5. 221A and 221B, 211 and 221B are communicated, and voltage drop mainly realizes regulation and control of unit temperature on the bonding layer I107A and the bonding layer II 107B; 221A and 211 are connected, and the voltage drop is mainly in the semiconductor micro-nano integrated element 002, so as to realize the driving of the semiconductor micro-nano integrated element.
Example eight
The invention provides a selective transfer technology of Micro LEDs. As shown in fig. 7, the adhesive layer at the designated position is heated in an 8×8 Micro-area heating array capable of positioning and temperature control, wherein the black area is the adhesive layer melted by heating, and the adhesive layer I107A and the adhesive layer II107B in the Micro-area heating array 200 are in contact with the Micro LED electrode I301 and the Micro LED electrode II302 in the Micro LED element 300 after being aligned. The Micro LED electrode I301 and the Micro LED electrode II302 are pressed into the melted bonding layer, the program control system breaks the connection passage of the Micro area heating unit, the bonding layer is solidified, the Micro area heating array 200 leaves the original substrate 400 of the Micro LED element 300, the Micro area heating array 200 is aligned with the receiving substrate 500, the Micro LED element 300 at the designated position is picked up and contacted, the bonding layer of the Micro area heating unit at the designated position is melted, and the Micro LED element 300 is peeled off from the Micro area heating array 200, so that the transfer of the Micro LED element is completed. The selective transfer locations of Micro LED elements are shown in fig. 7. Fig. 8 demonstrates the selective transfer process from a side view.
Example nine
The invention provides a technology for preparing a red, blue and green Micro LED luminous module by a selective transfer technology. Fig. 9 shows the distribution of red, blue, and green three-color Micro LED elements in an 8x8 positionable temperature controllable Micro-area heating array. 310 is a red Micro LED element, 320 is a green Micro LED element, and 330 is a blue Micro LED element. Fig. 10 demonstrates the selective transfer process from a side view. The red Micro LED element 310 is aligned with the Micro heating unit 100 at the designated position, the program control system sends a heating instruction to melt the bonding layers I107A and II107B at the welded position, the red Micro LED electrode I311 and the red Micro LED electrode II312 in the red Micro LED element 310 are pressed into the melted bonding layers, the program control system sends a cooling instruction to solidify the bonding layers at the designated position, the red Micro LED element 310 leaves the original substrate 400 and is left at the designated position of the Micro heating array 200, and the welding process of the green Micro LED element 320 and the blue Micro LED element 330 is the same as that of the red Micro LED element 310.
Examples ten
The invention provides a selective repair technology for a Micro LED integrated array. And driving the Micro LED integrated array through a program control system to detect electrical performance and lock the position of a bad part. Fig. 11 shows the position of the bad part 340. Fig. 12 demonstrates the repair process from a side view. The program control system sends a heating instruction to the bonding layers I107A and II107B at the positions of the bad parts, the bonding layers I107A and II107B melt, the bad parts are picked up by the receiving substrate 500 and separated from the micro-area heating array 200, and the purpose of removing the bad parts is achieved. The new Micro LED element 300 is soldered to the original bad part location by soldering technique. And the program control system sends a heating instruction to the bonding layers I107A and II107B at the positions of the bad parts, and after the Micro LED elements 300 are aligned and contacted, the program control system sends a cooling instruction to complete repair of the bad parts.
The foregoing description of the preferred embodiments of the present invention has been presented only in terms of those specific and detailed descriptions, and is not, therefore, to be construed as limiting the scope of the invention. It should be noted that modifications, improvements and substitutions can be made by those skilled in the art without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (16)
1. A localized temperature controlled micro-area heating array, characterized by: the micro-zone heating array comprises a micro-zone heating array and a program control system, wherein the micro-zone heating array comprises: the electrode layer I comprises an array of n electrodes I and a lead I part, and the electrode layer II comprises an array of n electrodes II and a lead II part;
The micro-zone heating unit comprises the following structure: a substrate; an electrode I disposed on the substrate; the heating layer I is arranged on the electrode I and is made of an electric heating material; the insulating layer I is covered on the substrate, the electrode I and the heating layer I, the main purpose of the insulating layer I is to isolate the electrode I from the electrode II, the insulating layer I is provided with a hollowed-out part, and part or all of the heating layer I is exposed out of the hollowed-out part; the electrode II is arranged above the insulating layer I, and the electrode II does not cover the hollowed-out part of the insulating layer I; the heating layer II is arranged on the electrode II and is made of an electric heating material; the insulating layer II is arranged above the insulating layer I and the electrode II, the insulating layer II does not cover the hollowed-out part of the insulating layer I, and the hollowed-out part of the insulating layer II is provided with a heating layer II; the bonding layers are arranged in the hollowed-out parts of the insulating layer I and the hollowed-out parts of the insulating layer II, the bonding layers are conductive materials and thermoplastic materials with melting points lower than those of the electrodes I and II, and the bonding layers are in direct contact with the heating layer I and the heating layer II to form contacts;
The program control system is a circuit control system edited by a program, an electrode I and an electrode II of a single or a plurality of micro-area heating units are communicated to form a loop, a specified electrical signal is applied to the communicated micro-area heating units, the temperature is regulated and controlled, and the bonding layer is melted and solidified to selectively transfer the corresponding semiconductor micro-nano integrated elements on the micro-area heating units;
the micro-area heating array has an independent temperature control driving function and an independent semiconductor micro-nano integrated element driving function, a group of loops can be shared by the temperature control driving and the semiconductor micro-nano integrated element driving control loops, and two or more groups of control loops can be independently arranged, wherein the micro-area heating array capable of positioning and controlling the temperature is required to be connected with the electrodes of the semiconductor micro-nano integrated element to form a loop under the condition of sharing one group of loops.
2. A localized temperature controllable micro-area heating array as claimed in claim 1, wherein: the insulating layer I and the insulating layer II are made of low-heat-conduction dielectric materials, and one or more of ：SiO2、GaN、AlN、TiO2、ZnO、ZrO2、ThO2、Al2O3、Cr2O3、CeO2、AlF3、CeF3、HfF4、ScF3、YF3、ScF3、ThF3、LaF3、MgF2、ZnS、Ta2O5 are selected.
3. A localized temperature controllable micro-area heating array as claimed in claim 1, wherein: the bonding layer is made of conductive materials and thermoplastic materials with the melting point lower than 300 ℃, and comprises the following components: in, bi, sn, ag, cu, au, ga, sn, and one or a combination of PMMA, POM, PBT, PCL, PET, PC, PE, PEEK, PLA, PP, PS, PVDC.
4. A localized temperature controllable micro-area heating array as claimed in claim 1, wherein: the micro-zone heating array can use an external circuit as part of the electrode layer I and the electrode layer II to integrate n micro-zone heating units to form the array, or can use an in-situ manufacturing method to directly manufacture the electrode layer I, the electrode layer II and the n micro-zone heating units on the substrate to form the micro-zone heating array.
5. A localized temperature controllable micro-area heating array as claimed in claim 1, wherein: the substrate is provided with a single step or a plurality of independent steps, and micro-area heating units are arranged on the steps.
6. A localized temperature controllable micro-area heating array as claimed in claim 1, wherein: the temperature control drive and the semiconductor micro-nano integrated element drive share a group of loops and share a group of contacts, the heating layer I and the heating layer II are conductive electric heating materials and comprise ITO, AZO, IGZO, and one or more of the micro-area heating array, the program control system and the semiconductor micro-nano integrated element are introduced into the rectifying element.
7. The localized temperature controllable micro-heating array of claim 6, wherein: the rectifying element comprises an NPN structure and a PNP structure of the semiconductor micro-nano integrated element.
8. The localized temperature controllable micro-heating array of claim 6, wherein: the rectifying element is a zener diode.
9. A localized temperature controllable micro-area heating array as claimed in claim 1, wherein: the temperature control drive and the semiconductor micro-nano integrated element drive are arranged into two or more independent control loops and share one group of contacts, the heating layer I and the heating layer II are conductive electric heating materials and comprise ITO, AZO, IGZO, one or two of the heating layer I and the heating layer II are at least added with one electrode, the heating layer I and the heating layer II are provided with the independent control loops, and the semiconductor micro-nano integrated element is not required to be externally connected for temperature control, so that the temperature control drive of the micro-zone heating array capable of positioning and controlling the temperature is controlled by one group of loops, and the semiconductor micro-nano integrated element drive is controlled by the other group of loops.
10. A localized temperature controllable micro-area heating array as claimed in claim 1, wherein: the temperature control drive and the semiconductor micro-nano integrated element drive are arranged into two or more independent control loops without sharing contacts, the heating layer I and the heating layer II can be conductive electric heating materials or nonconductive electric heating materials, the micro-area heating unit is adjusted to have at least one contact to participate in the temperature control drive, the semiconductor micro-nano integrated element drive is completed by other two or more electrodes, so that the temperature control drive of the micro-area heating array capable of positioning and controlling the temperature is controlled by one set of loops, and the semiconductor micro-nano integrated element drive is controlled by the other set of loops.
11. A localized temperature controllable micro-area heating array as claimed in claim 1, wherein: the micro-area heating array can be driven passively, and a heating layer and a bonding layer can be arranged on the active driving circuit.
12. A localized temperature controllable micro-area heating array according to any one of claims 1 to 11, the method of selectively transferring semiconductor micro-nano integrated devices comprising: a transfer process in which a component of a specified position is moved from one position to another position, a removal process in which a component of a specified position is removed from an original position, a soldering process in which a component is soldered on a specified position, or a repair process in which a component of a specified position is repaired.
13. The method of claim 12, wherein the selectively transferring the micro-nano semiconductor integrated device is characterized by: the micro-area heating array capable of being positioned and controlled can be used in a selective transfer process of single or batch semiconductor micro-nano integrated elements, a program control system is communicated with single or multiple micro-area heating units at designated positions, and the micro-area heating units at designated positions heat the bonding layer and melt the bonding layer; the micro-area heating array capable of positioning and controlling temperature is contacted with a group of semiconductor micro-nano integrated elements on the receiving substrate, and the semiconductor micro-nano integrated elements are pressed into the melted bonding layer; the program control system disconnects the connection passage of the micro-area heating unit, and the bonding layer is solidified; the micro-area heating array capable of positioning and controlling temperature picks up the semiconductor micro-nano integrated element at the designated position and contacts with another group of receiving substrates; the program control system is communicated with a single or a plurality of micro-area heating units at the designated positions, the micro-area heating units at the designated positions heat the bonding layer, and the bonding layer is melted; the micro-area heating array capable of positioning and controlling temperature is separated from the receiving substrate, and the placing process of the semiconductor micro-nano integrated element is completed.
14. The method of claim 12, wherein the selectively transferring the micro-nano semiconductor integrated device is characterized by: the micro-area heating array capable of positioning and controlling the temperature can be used in a selective welding process of single or batch semiconductor micro-nano integrated elements, the micro-area heating array capable of positioning and controlling the temperature is aligned and contacted with the semiconductor micro-nano integrated elements, so that electrodes of the semiconductor micro-nano integrated elements are aligned with the bonding layer, and for the inverted semiconductor micro-nano integrated elements, a one-time transfer technology can be selected to expose the electrodes of the semiconductor micro-nano integrated elements; the program control system is communicated with a single or a plurality of micro-area heating units at the designated positions, the micro-area heating units at the designated positions heat the bonding layer, and the bonding layer is melted; the program control system disconnects the connection passage of the micro-area heating unit, and the bonding layer is solidified; and (5) completing the welding process of the semiconductor micro-nano integrated element at the designated position.
15. The method of claim 12, wherein the selectively transferring the micro-nano semiconductor integrated device is characterized by: the micro-area heating array capable of being positioned and controlled can be used in a selective removal process of single or batch semiconductor micro-nano integrated elements, the semiconductor micro-nano integrated elements are welded on the micro-area heating array capable of being positioned and controlled, a program control system is communicated with single or multiple micro-area heating units at designated positions, the micro-area heating units at designated positions heat bonding layers, and the bonding layers are melted; and picking up the semiconductor micro-nano integrated element at the melting position of the bonding layer by using a transfer technology, and completing the removal process of the semiconductor micro-nano integrated element, wherein the transfer technology can be a non-selective transfer technology.
16. The method of claim 12, wherein the selectively transferring the micro-nano semiconductor integrated device is characterized by: the micro-area heating array capable of being positioned and controlled can be used in a selective repair process of single or batch semiconductor micro-nano integrated elements, the semiconductor micro-nano integrated elements are welded on the micro-area heating array capable of being positioned and controlled, a program control system is communicated with single or multiple micro-area heating units at designated positions, the driving function of the semiconductor micro-nano integrated elements is started, bad points are tested, and the positions are determined; removing the semiconductor micro-nano integrated element at the dead point position by utilizing the selective removing process of the semiconductor micro-nano integrated element by the micro-zone heating array capable of positioning and controlling the temperature; welding a new semiconductor micro-nano integrated element on the removed dead point position by utilizing the selective welding process of the micro-zone heating array capable of positioning and controlling the temperature to the semiconductor micro-nano integrated element; and (5) completing the selective repair of the semiconductor micro-nano integrated element.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004186316A (en) * | 2002-12-02 | 2004-07-02 | Toshiba Corp | Semiconductor device and its manufacturing method |
| CN1719631A (en) * | 2005-07-13 | 2006-01-11 | 南昌大学 | Semiconductor lighting element with sunken electrode |
| CN106086811A (en) * | 2016-06-14 | 2016-11-09 | 南昌大学 | A kind of simple and easy method preparing carbon nano pipe array Graphene mixed structure |
| CN107758605A (en) * | 2016-08-16 | 2018-03-06 | 中国科学院上海微系统与信息技术研究所 | A kind of microelectrode array chip and preparation method thereof |
| CN109904052A (en) * | 2018-12-28 | 2019-06-18 | 华中科技大学 | A kind of ion averager device and preparation method thereof |
| CN111048497A (en) * | 2019-11-11 | 2020-04-21 | 潘小和 | Method for manufacturing active matrix color display device |
| CN111264031A (en) * | 2017-11-27 | 2020-06-09 | 株式会社村田制作所 | Resonance device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI333733B (en) * | 2007-05-09 | 2010-11-21 | Sunonwealth Electr Mach Ind Co | Layout design and fabrication of sda micro motor for low driving voltage and high lifetime application |
-
2020
- 2020-09-03 CN CN202010913805.0A patent/CN112047297B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004186316A (en) * | 2002-12-02 | 2004-07-02 | Toshiba Corp | Semiconductor device and its manufacturing method |
| CN1719631A (en) * | 2005-07-13 | 2006-01-11 | 南昌大学 | Semiconductor lighting element with sunken electrode |
| CN106086811A (en) * | 2016-06-14 | 2016-11-09 | 南昌大学 | A kind of simple and easy method preparing carbon nano pipe array Graphene mixed structure |
| CN107758605A (en) * | 2016-08-16 | 2018-03-06 | 中国科学院上海微系统与信息技术研究所 | A kind of microelectrode array chip and preparation method thereof |
| CN111264031A (en) * | 2017-11-27 | 2020-06-09 | 株式会社村田制作所 | Resonance device |
| CN109904052A (en) * | 2018-12-28 | 2019-06-18 | 华中科技大学 | A kind of ion averager device and preparation method thereof |
| CN111048497A (en) * | 2019-11-11 | 2020-04-21 | 潘小和 | Method for manufacturing active matrix color display device |
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