CN114300500A - Micro LED chip assembly, display panel and manufacturing method - Google Patents

Abstract

The application provides a Micro LED chip assembly, a display panel and a manufacturing method, wherein the manufacturing method of the display panel comprises the steps of providing an epitaxial substrate, arranging a plurality of Micro LED chips arranged at intervals on the epitaxial substrate, arranging tin columns on the Micro LED chips, removing the epitaxial substrate, clamping the tin columns by adopting a transfer head, transferring the Micro LED chips to a back plate, welding the Micro LED chips and bonding pads on the back plate by adopting a reflow soldering process, and melting the tin columns. The transfer head is adopted for clamping, so that the precision is high, and meanwhile, the chip cannot be directly clamped, and the chip is prevented from being damaged; the LED chip is connected with the bonding pad through the reflow soldering process, and meanwhile, the tin column is melted on the surface of the Micro LED chip in the reflow soldering process, so that the conductive capacity of the Micro LED chip is improved under the condition that the subsequent glue sealing process is not influenced.

Description

Micro LED chip assembly, display panel and manufacturing method

Technical Field

The application relates to the technical field of semiconductor device manufacturing, in particular to a Micro LED chip assembly, a display panel and a manufacturing method.

Background

With the continuous development of the LED technology, Micro LED display is a big trend in the future display industry, and Micro LED with a mass transfer technology can combine different display panels to create transparent, curved and flexible display effects, so that it can become a mainstream display technology comparable to the OLED technology.

The current mainstream mass transfer techniques include the following categories:

(1) respectively applying positive and negative voltages in the transferring process by adopting an electrostatic force transferring mode of a transferring head with a single-pole and double-pole structure, and grabbing the Micro LED from the substrate by using electrostatic force;

(2) an adhesion force transfer mode is adopted, an elastic stamp is used, a high-precision motion control printing head is combined, and Van der Waals force is utilized to enable the Micro LED to be adhered to the transfer head;

(3) magnetic materials such as iron, cobalt and nickel are mixed on the Micro LED by adopting a transfer mode of electromagnetic force, and the absorption and release are carried out by utilizing the electromagnetic force.

However, the mass transfer processes are complex, and have the problems of low transfer precision, and the manufacturing cost of the Micro LED is increased.

Disclosure of Invention

The embodiment of the application provides a Micro LED chip assembly, a display panel and a manufacturing method, and aims to solve the problems that an existing mass transfer process is complex and low in precision.

In a first aspect, an embodiment of the present application provides a method for manufacturing a display panel, including:

providing an epitaxial substrate;

arranging a plurality of Micro LED chips arranged at intervals on the epitaxial substrate;

arranging a tin column on the Micro LED chip;

removing the epitaxial substrate;

clamping the tin column by using a transfer head and transferring the Micro LED chip to a back plate;

and welding the Micro LED chip and the bonding pad on the back plate by adopting a reflow soldering process, and melting the tin column.

Optionally, the step of arranging the tin column on the Micro LED chip includes:

and forming a tin column on the Micro LED chip by adopting an electroplating photoresistance process so as to control the height and the width of the tin column.

Optionally, the step of disposing a plurality of Micro LED chips disposed at intervals on the epitaxial substrate includes:

the first electrode, the first semiconductor layer, the multiple quantum well layer, the second semiconductor layer and the second electrode are sequentially arranged on the epitaxial substrate to form the Micro LED chip.

Optionally, the clamping the solder columns and transferring the Micro LED chips to the back plate by using the transfer head includes:

the clamping is carried out one by one, and the transferring is carried out one by one.

Optionally, after melting the tin pillar, the method further includes:

and forming the melted tin column into a tin film covering the Micro LED chip.

Optionally, the epitaxial substrate includes a substrate base plate and a pyrolytic glue film layer, and removing the epitaxial substrate includes:

and heating the pyrolytic gel film layer to melt the pyrolytic gel film layer so as to separate the Micro LED chip from the substrate base plate.

In a second aspect, an embodiment of the present application further provides a Micro LED chip assembly, including:

an epitaxial substrate, a first electrode and a second electrode,

the Micro LED chips are arranged on the epitaxial substrate at intervals;

the tin column is arranged on one side, far away from the substrate base plate, of the Micro LED chip and used for being clamped to transfer the Micro LED chip.

Optionally, the epitaxial substrate includes:

a substrate base plate, a first substrate base plate,

the pyrolysis glue film layer is arranged on one side, facing the Micro LED chip, of the substrate base plate and is used for melting after heating so that the Micro LED chip is separated from the substrate base plate.

Optionally, the Micro LED chip includes a first electrode, a first semiconductor layer, a multi-quantum well layer, a second semiconductor layer, and a second electrode, which are sequentially disposed along a direction departing from the epitaxial substrate.

In a third aspect, an embodiment of the present application further provides a display panel, including:

a back plate;

a plurality of bonding pads, which are arranged at intervals;

the Micro LED chips are correspondingly arranged on the bonding pads;

the conductive layer is arranged on one side, far away from the back plate, of the Micro LED chip and is formed by melting a tin column, and the tin column is used for being clamped to transfer the Micro LED chip to the back plate.

The manufacturing method of the display panel provided by the embodiment of the application comprises the steps that on the basis of manufacturing of LEDs, the tin column is arranged on the Micro LED chip, the Micro LED chip is transferred to the back plate in a mode of clamping the tin column by the transfer head, the transfer head is adopted for clamping, the precision is high, meanwhile, the chip cannot be directly clamped, the chip is prevented from being damaged, then the Micro LED chip and the bonding pad are connected through the reflow soldering process, meanwhile, the tin column is melted on the surface of the Micro LED chip in the reflow soldering process, the conductive capacity of the Micro LED chip is improved under the condition that the follow-up glue sealing process is not influenced, meanwhile, the manufacturing method of the display panel is simple in process, and the manufacturing cost is saved.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings used in the description of the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the application, and that other drawings can be derived from these drawings by a person skilled in the art without inventive effort.

For a more complete understanding of the present application and its advantages, reference is now made to the following descriptions taken in conjunction with the accompanying drawings. Wherein like reference numerals refer to like parts in the following description.

Fig. 1 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present disclosure;

FIGS. 2-9 are diagrams illustrating steps of a method for fabricating a display panel according to an embodiment of the present invention;

fig. 10 is a schematic structural diagram of a display panel according to an embodiment of the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

As mentioned in the background, LED technology is continuously developed, Micro LED display technology has become a trend in the future display industry, and Micro LED with mass transfer technology can be combined with different display panels, but the current mass transfer technology includes: electrostatic force transfer, adhesive force transfer, electromagnetic force transfer, etc., but the existing bulk transfer process is complicated, not only the tools used in the transfer process are more, increasing the manufacturing cost of Micro LEDs, but also the transfer precision cannot be ensured, and finally the display effect is poor.

Therefore, the embodiment of the application provides a Micro LED chip assembly, a display panel and a manufacturing method, which have solved the problems of high manufacturing cost and low transfer precision caused by the complexity of the existing mass transfer process in the transfer process. The following description will be made with reference to the accompanying drawings.

Fig. 1 is a flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present disclosure, where fig. 1 is a flowchart illustrating the method for manufacturing the display panel according to the embodiment of the present disclosure. As shown in fig. 1, the method for manufacturing a display panel includes:

s101: an epitaxial substrate is provided.

It should be noted that the material of the epitaxial substrate in the embodiment of the present application may be a single crystal aluminum oxide substrate, a silicon carbide substrate, or other materials, and the material of the epitaxial substrate is not limited in the embodiment of the present application.

After the epitaxial substrate is provided and before other processes are carried out, the epitaxial substrate can be pretreated, and corresponding pretreatment modes are different according to different materials of the epitaxial substrate.

The pretreatment comprises the following steps: selecting acetone, isopropanol and deionized water to ultrasonically clean the surface of the epitaxial substrate, and spin-drying the surface of the epitaxial substrate by using a spin dryer; placing the mixture in a cavity of Molecular BEam Epitaxy (MBE) or Metal-organic chemical Vapor Deposition (MOCVD), heating to 600-900 ℃, annealing for 30-60 minutes, and cooling to room temperature.

For example, referring to fig. 2, fig. 2 is a schematic structural diagram of an epitaxial substrate in an embodiment of the present application, the epitaxial substrate includes a substrate base plate 11 and a pyrolytic glue film layer 12, which are adjacently disposed, the substrate base plate 11 is disposed on the pyrolytic glue film layer 12, and the pyrolytic glue film layer 12 can bond the substrate base plate 11 and an LED chip disposed on the pyrolytic glue film layer 12 by using characteristics of the pyrolytic glue film layer 12. The contact area between the pyrolytic gel film layer 12 and the substrate 11 may be entirely covered or partially covered, and the contact area between the pyrolytic gel film layer 12 and the substrate 11 is not limited in the embodiments of the present application.

And S102, arranging a plurality of Micro LED chips arranged at intervals on the epitaxial substrate.

Specifically, the Micro OLED chips 10 are disposed on the pyrolytic adhesive film layer 12, and it should be noted that the number of the Micro OLED chips 10 is not limited in the embodiment of the present application, and only the Micro OLED chips need to be disposed on the pyrolytic adhesive film layer 12 at intervals.

Referring to fig. 3, fig. 3 is a schematic structural diagram of a Micro LED chip 10 including an epitaxial substrate in an embodiment of the present disclosure, in which the Micro OLED chip 10 includes a first electrode 13, a first semiconductor 14, a multi-quantum well layer 15, a second semiconductor 16, and a second electrode 17 sequentially disposed on a pyrolytic glue thin film layer 12 to form the Micro LED chip 10. The first semiconductor 14 may be N-type GaN, P-type GaN, or another GaAs material, GAP material, or the like. Correspondingly, the second semiconductor 16 may be P-type GaNk, N-type GaNk, or other GaAs or GAP materials, and the specific materials of the first semiconductor 14 and the second semiconductor 16 are not limited in the embodiments of the present invention.

S103: and arranging a tin column on the Micro LED chip.

Specifically, please refer to fig. 4, fig. 4 is a schematic structural diagram after a tin pillar is disposed on the Micro LED chip in the embodiment of the present application, wherein a tin pillar 18 is further disposed on the Micro LED chip 10, and the tin pillar 18 is disposed on a side of the second semiconductor 16 away from the epitaxial substrate, it should be noted that a pattern of the tin pillar 18 may be a cylinder, or may be a sphere or another pattern capable of being clamped by a transfer head, and the shape of the tin pillar 18 and the position of the tin pillar disposed on the second semiconductor 16 are not limited in the embodiment of the present application.

Illustratively, disposing the tin posts 18 on the Micro LED chip 10 includes: a tin pillar 18 is formed on the Micro LED chip 10 using an electro-plating photoresist process to control the height and width of the tin pillar. Specifically, the electroplating photoresist process comprises the following steps: preparing and forming a thin film layer to be etched on the second semiconductor 16, preparing and forming a light resistance pattern on the thin film layer to be etched, and performing an etching process on the thin film layer to be etched under the protection of the light resistance pattern to obtain a circuit pattern. The tin column pattern is manufactured by an electroplating photoresist process, and the height and width of the tin column pattern can be controlled by setting the shape of the photoresist pattern, so as to obtain the tin column 18 required in the embodiment of the present application. In addition, the height and the width of the tin column 18 are adjusted by setting the shape of the photoresist pattern, the size of the tin column 18 is also unified, and the problem that the transfer head is frequently replaced due to the fact that the size of the tin column 18 is too large or too small is solved.

And S104, removing the epitaxial substrate.

Referring to fig. 5, fig. 5 is a schematic structural view of a Micro LED chip after the transfer head clamps and separates from the epitaxial substrate, in which the epitaxial substrate includes a substrate base plate 11 and a pyrolytic glue film layer 12, and removing the epitaxial substrate includes: and heating the pyrolytic glue film layer 12 to melt the pyrolytic glue film layer so as to separate the Micro LED chip 10 from the substrate base plate. Specifically, the pyrolytic glue film layer 12 in the embodiment of the present application can bond the substrate 11 and the Micro LED chips 10 arranged on the pyrolytic glue film layer 12 by utilizing the characteristics of the pyrolytic glue film layer 12, the Micro LED chips 10 in the embodiment of the present application are gradually heated, when the melting point of the pyrolytic glue film layer 12 is reached, the pyrolytic glue film layer 12 can be gradually melted, the heating is continued until the pyrolytic glue film layer 12 is separated from the Micro LED chips 10, the Micro LED chips 10 capable of being placed in the display panel are obtained, and then the Micro LED chips 10 are placed on a dry and dustless bottom surface to stand for waiting for the next process. It should be noted that, in the embodiment of the present application, the material of the pyrolytic adhesive film layer 12 may be UV adhesive, EVA hot melt adhesive, or other materials that can be melted at a certain temperature, and the embodiment of the present application does not limit the material of the pyrolytic adhesive film layer 12. In this embodiment of the application, the heating method for the pyrolytic glue film layer 12 is not limited, and only the pyrolytic glue film layer 12 is melted and separated from the bonding state with the Micro LED chip 10, for example, the heating method may be: hot air heating, infrared heating or other heating methods.

S105: the solder balls were held and the Micro LED chips were transferred to the backplane using a transfer head.

Referring to fig. 6, 7 and 8, fig. 6 is a schematic structural view of a Micro LED chip after the transfer head clamps and separates from the epitaxial substrate, fig. 7 is a schematic structural view of a Micro LED chip transferred onto a backplane by the transfer head clamping a solder post in the embodiment of the present application, and fig. 8 is a schematic structural view of the transfer head after the Micro LED chip is placed on the transfer head. Specifically, in the embodiment of the present application, the transfer head 19 is made of a metal flexible material, such as: the materials such as copper, sodium, potassium, and the like, it should be noted that, in this embodiment of the application, the material of the transfer head 19 is not limited, and only a flexible mechanical material is required, and the tin column 18 disposed on the Micro LED chip 10 is not damaged when the Micro LED chip 10 is clamped, and for convenience of description, the mechanical transfer head 19 is hereinafter referred to as a mechanical transfer head. A flexible mechanical transfer head 19 is used for clamping a tin column 18 on the chip 10, the Micro LED chip 10 is lifted up by clamping the tin column 18, the mechanical transfer head 19 is operated by adopting a mechanical coordinate system to set a coordinate point to transfer the Micro LED chip 10 to a bonding pad 20 corresponding to the Micro LED chip 10 on a back plate 21, after the mechanical transfer head 19 clamps the tin column 18 to the coordinate point set in advance, i.e., the mechanical transfer head 19 is released behind the corresponding pad 20, the Micro LED chip 10 is set up on the pad 20 under the action of gravity, i.e., the step of transferring the Micro LED chips 10 to the back plate 21 is completed, wherein the mechanical transfer head 19 sets coordinates in advance and transfers coordinate points, the transfer precision can be ensured to the greatest extent, errors are reduced, and the influence on the display effect of the final display panel caused by the fact that the positions of the Micro LED chip 10 and the bonding pad 20 do not correspond to each other is avoided.

Illustratively, the mechanical transfer head 19 used in the embodiments of the present application to hold the tin pillar 18 and transfer the Micro LED chip 10 to the back sheet 21 includes: the clamping is carried out one by one, and the transferring is carried out one by one. Specifically, referring to fig. 4 to 8, a plurality of Micro LED chips 10 may be disposed on the pyrolytic adhesive film layer 12, only the plurality of chips 10 may be adhered to the pyrolytic adhesive film layer 12, a tin column 18 is disposed on each Micro LED chip 10 by an electroplating process, the pyrolytic adhesive film layer 12 is melted by continuous heating to separate the chip 10 from the pyrolytic adhesive film layer 12, the chip 10 is placed on a dry and dust-free bottom surface and is left to stand, the tin column 18 on the first Micro LED chip 10 is clamped by a mechanical transfer head 19, the mechanical transfer head 19 is operated by a mechanical coordinate system to set a coordinate point to transfer the first Micro LED chip 10 to a bonding pad 20 on a back plate 21 corresponding to the chip 10, the mechanical transfer head 19 is released after reaching a specified position, the first Micro LED chip 10 is set on the bonding pad 20 under the action of gravity, and the mechanical transfer head 19 returns to a clamping area, and clamping the tin posts 18 on the second Micro LED chip 10, placing the second Micro LED chip 10 on the bonding pad 20 through the steps, and sequentially clamping the chips 10 one by the mechanical transfer head 19 and placing the chips 10 one by one until all the chips 10 are transferred. The existing mass transfer technology adopts the following modes: electrostatic force transfer, adhesive force transfer, electromagnetic force transfer and the like, the existing huge transfer technology transfers a plurality of Micro LEDs to a display panel as a whole, and the bonding position of each Micro LED and each bonding pad on the display panel is difficult to ensure to be consistent, so that the display effect is poor. In the embodiment of the application, the mechanical transfer head is used for clamping the Micro LED chips 10 one by one, the Micro LED chips 10 are placed one by one, the mode that the mechanical transfer head is controlled by setting a mechanical coordinate point to clamp and transfer is adopted, the transfer precision is guaranteed, the position of each Micro LED chip 10, which is attached to the bonding pad, is the same, and the problem that the display effect is affected due to the fact that the attachment positions are inconsistent can be avoided.

S106: and welding the Micro LED chip and the bonding pad on the back plate by adopting a reflow soldering process, and melting the tin column.

Referring to fig. 9, fig. 9 is a schematic structural view illustrating a melting of a tin pillar when a chip and a pad are solder reflowed in the embodiment of the present application. Specifically, in the embodiment of the present application, after all Micro LED chips 10 are transferred to the back plate 21 by the mechanical transfer head 19, the chips are soldered to the pads 20 by a reflow soldering process, where the reflow soldering process includes: preparing a printed board and soldering paste, printing the soldering paste, mounting a chip component, reflow soldering, testing, shaping, cleaning and drying. Wherein the reflow soldering includes: preheating, heating, reflowing and cooling, wherein when the peak temperature of reflow soldering is 210-230 ℃, the tin column 18 on the Micro LED chip 10 reaches a melting point at the moment and starts to melt gradually under the action of high temperature.

For example, please refer to fig. 10, fig. 10 is a schematic structural diagram of a tin film formed on the second electrode after the tin pillar is melted in the embodiment of the present application. In the embodiment of the present application, after melting the tin pillar 18, the method further includes: the melted tin pillar 18 is formed as a tin film covering the Micro LED chip 10. Specifically, at the high temperature of the reflow soldering process, the tin column 18 starts to gradually melt, and forms a tin film covering the second electrode 17 after melting, wherein the tin column 18 melts into a tin film covering the surface of the second electrode 17 in the reflow soldering process, so that the raised tin column 18 does not need to be specially packaged in the subsequent packaging process, the subsequent packaging process is not affected, the problem of complex process caused by the raised tin column 18 arranged on the Micro LED chip 10 is avoided, and due to the excellent conductivity of tin, the conductivity of the second electrode 17 can be effectively improved by covering the melted tin column 18 on the second electrode 17, the light emitting efficiency is improved, and the purpose of improving the display effect is finally achieved.

An embodiment of the present application further provides a Micro LED chip assembly, please refer to fig. 4, where fig. 4 is a schematic structural diagram of the Micro LED chip assembly in the embodiment of the present application, and in the embodiment of the present application, the Micro LED chip assembly includes: an epitaxial substrate, a plurality of Micro LED chips 10, and a tin post 18. Wherein, a plurality of Micro LED chips 10 interval sets up on epitaxial substrate, and tin post 18 sets up in the one side that Micro LED chip 10 kept away from the substrate base plate, and tin post 18 is used for being held in order to shift Micro LED chip 10 with Micro LED chip 10 and shifts.

Specifically, in the embodiment of the present application, the Micro OLED chip 10 includes a first electrode 13, a first semiconductor 14, a multi-quantum well layer 15, a second semiconductor 16, and a second electrode 17, which are sequentially disposed on the pyrolytic glue film layer 12, so as to form the Micro LED chip 10. The first semiconductor 14 may be N-type GaN, P-type GaN, or another GaAs material, GAP material, or the like. Correspondingly, the second semiconductor 16 may be P-type GaNk, N-type GaNk, or other GaAs or GAP materials, and the specific materials of the first semiconductor 14 and the second semiconductor 16 are not limited in the embodiments of the present invention. The tin column 18 is arranged on one side, away from the epitaxial substrate, of the second semiconductor 16, and is manufactured by adopting an electroplating process, the pattern length and the width of the tin column 18 can be effectively controlled by adopting the electroplating process so as to simplify the process, the size of the tin column 18 is unified, and the problem that the transfer head is frequently replaced due to the fact that the size of the tin column 18 is too large or too small is solved. It should be noted that the pattern of the tin pillar 18 may be a cylinder, and may also be a sphere or other patterns capable of being gripped by the transfer head, and the embodiment of the present application does not limit the shape and the position of the tin pillar 18 on the second semiconductor 16.

Illustratively, the epitaxial substrate of the Micro LED chip assembly in the embodiment of the present application includes: the LED chip comprises a substrate base plate 11 and a pyrolytic glue thin film layer 12, wherein the pyrolytic glue thin film layer 12 is used for melting after heating, so that the Micro LED chip 10 is separated from the substrate base plate 11. Specifically, the pyrolytic glue film layer 12 in the embodiment of the present application can bond the substrate 11 and the Micro LED chip 10 arranged on the pyrolytic glue film layer 12 by using the characteristics thereof, and when the Micro LED chip assembly is gradually heated, the pyrolytic glue film layer 12 can be gradually melted until being separated from the Micro LED, and at this time, the Micro LED chip 10 capable of being placed in the display panel can be obtained. It should be noted that, in the embodiment of the present application, the material of the pyrolytic adhesive film layer 12 may be UV adhesive, EVA hot melt adhesive, or other materials that can be melted at a certain temperature, and the embodiment of the present application does not limit the material of the pyrolytic adhesive film layer 12. In this embodiment of the application, the heating method for the pyrolytic glue film layer 12 is not limited, and only the pyrolytic glue film layer 12 is melted and separated from the bonding state with the Micro LED chip 10, for example, the heating method may be: hot air heating, infrared heating or other heating methods.

An embodiment of the present application further provides a display panel, please refer to fig. 8, 9 and 10, where the display panel in the embodiment of the present application includes: the Micro LED chip comprises a back plate 21, a plurality of bonding pads 20, a plurality of Micro LED chips 10 and a conductive layer 18, wherein the bonding pads 20 are arranged at intervals, the Micro LED chips 10 are correspondingly arranged on the bonding pads 20, the conductive layer 18 is arranged on one side, away from the back plate 21, of the Micro LED chips 10, the conductive layer 18 is formed by melting tin columns 18 in the figure 8, and the tin columns 18 before melting are used for being clamped to transfer the Micro LED chips 10 to the back plate 21.

Specifically, as shown in fig. 8, a plurality of pads 20 are arranged on a back plate 21 at intervals, each pad 20 corresponds to one Micro LED chip 10, in this embodiment, the number of pads 20 is not limited, and the number of pads 20 only needs to correspond to the number of Micro LED chips 10. Each Micro LED chip 10 is disposed on a pad 20 corresponding thereto, wherein the Micro LED chip 10 includes: the chip comprises a first electrode 13, a first semiconductor 14, a multiple quantum well layer 15, a second semiconductor 16 and a second electrode 17 which are sequentially arranged from bottom to top, wherein a tin column 18 arranged through an electroplating process is further arranged on the second electrode 17 of the chip 10. As shown in fig. 9, after the reflow process is adopted, the Micro LED chip 10 is soldered to the pad 20, and when the peak temperature of the reflow process is 210-230 ℃, the tin pillar 18 on the Micro LED chip 10 reaches the melting point at this time, starts to gradually melt under the action of high temperature, gradually forms an irregular pattern on the second electrode 17, and finally forms the tin solution covering the second electrode 17. In the embodiment of the present invention, the volume of the molten tin is not limited, and the surface of the second electrode 17 may be covered. As shown in fig. 10, after the molten tin is condensed, the conductive layer 18 covering the second electrode 17 can be formed, so that no special packaging is required for the raised tin column 18 in the subsequent packaging process, the subsequent packaging process is not affected, the problem of complex process caused by the raised tin column 18 arranged on the Micro LED chip 10 is solved, and the conductive capability of the tin is good, so that the conductive layer 18 formed after the molten tin is condensed covers the second electrode 17, the conductive capability of the second electrode 17 can be effectively improved, the light emitting efficiency is improved, and the purpose of improving the display effect is finally achieved.

The Micro LED chip assembly, the display panel and the manufacturing method provided by the embodiment of the application have the advantages that on the basis of LED manufacturing, the tin column is arranged on the Micro LED chip, the Micro LED chip is transferred to the back plate in a mode of clamping the tin column by the transfer head, the transfer head is adopted for clamping, the precision is high, meanwhile, the chip cannot be directly clamped, the chip is prevented from being damaged, then the Micro LED chip is connected with the bonding pad through a reflow soldering process, meanwhile, the tin column is melted on the surface of the Micro LED chip in the reflow soldering process, the conducting capacity of the Micro LED chip is improved under the condition that the subsequent glue sealing process is not affected, meanwhile, the manufacturing method of the display panel is simple in process, and the manufacturing cost is saved.

In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.

In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features.

The Micro LED chip assembly, the display panel and the manufacturing method provided in the embodiments of the present application are described in detail above, and specific examples are applied herein to explain the principles and embodiments of the present application, and the description of the above embodiments is only used to help understand the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. A method for manufacturing a display panel is characterized by comprising the following steps:

providing an epitaxial substrate;

arranging a plurality of Micro LED chips arranged at intervals on the epitaxial substrate;

arranging a tin column on the Micro LED chip;

removing the epitaxial substrate;

clamping the tin column by using a transfer head and transferring the Micro LED chip to a back plate;

and welding the Micro LED chip and the bonding pad on the back plate by adopting a reflow soldering process, and melting the tin column.

2. The method for manufacturing a display panel according to claim 1, wherein the disposing of the tin pillar on the Micro LED chip comprises:

and forming a tin column on the Micro LED chip by adopting an electroplating photoresistance process so as to control the height and the width of the tin column.

3. The method for manufacturing the display panel according to claim 1, wherein the disposing a plurality of Micro LED chips arranged at intervals on the epitaxial substrate comprises:

the first electrode, the first semiconductor layer, the multiple quantum well layer, the second semiconductor layer and the second electrode are sequentially arranged on the epitaxial substrate to form the Micro LED chip.

4. The method for manufacturing the display panel according to claim 1, wherein the clamping the tin column by the transfer head and transferring the Micro LED chip to the back plate comprises:

and clamping the tin columns one by adopting a transfer head, and transferring and placing each Micro LED chip to the back plate one by one.

5. The method for manufacturing a display panel according to claim 1, wherein after the melting of the tin pillar, the method further comprises:

and forming the melted tin column into a tin film covering the Micro LED chip.

6. The method for manufacturing a display panel according to claim 1, wherein the epitaxial substrate includes a substrate base plate and a pyrolytic glue film layer, and the removing the epitaxial substrate includes:

and heating the pyrolytic gel film layer to melt the pyrolytic gel film layer so as to separate the Micro LED chip from the substrate base plate.

7. A Micro LED chip assembly, comprising:

an epitaxial substrate, a first electrode and a second electrode,

the Micro LED chips are arranged on the epitaxial substrate at intervals;

the tin column is arranged on one side, far away from the substrate base plate, of the Micro LED chip and used for being clamped to transfer the Micro LED chip.

8. A Micro LED chip assembly according to claim 7, wherein the epitaxial substrate comprises:

a substrate base plate, a first substrate base plate,

the pyrolysis glue film layer is arranged on one side, facing the Micro LED chip, of the substrate base plate and is used for melting after heating so that the Micro LED chip is separated from the substrate base plate.

9. A Micro LED chip assembly according to claim 7, wherein the Micro LED chip comprises a first electrode, a first semiconductor layer, a multi quantum well layer, a second semiconductor layer, a second electrode arranged in that order in a direction away from the epitaxial substrate.

10. A display panel, comprising:

a back plate;

a plurality of bonding pads, which are arranged at intervals;

the Micro LED chips are correspondingly arranged on the bonding pads;

the conductive layer is arranged on one side, far away from the back plate, of the Micro LED chip and is formed by melting a tin column, and the tin column is used for being clamped to transfer the Micro LED chip to the back plate.

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