CN115332401A - Method for realizing mass transfer based on laser de-bonding and application - Google Patents
Method for realizing mass transfer based on laser de-bonding and application Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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Abstract
The invention belongs to the technical field of semiconductor processing, and discloses a method for realizing massive transfer based on laser debonding. The invention also provides a manufacturing method of the full-color Micro-LED display device based on the mass transfer method. The invention can ensure the transfer precision and improve the transfer yield.
Description
Technical Field
The invention belongs to the technical field of semiconductor processing, and particularly relates to a method for realizing mass transfer based on laser de-bonding and application.
Background
The Micro-LED generally refers to an LED chip with the characteristic size smaller than 50 mu m, and has the remarkable advantages of excellent luminous performance, long service life, low energy consumption, high color saturation degree and the like. The Micro-LED display technology is developed on the basis of the conventional LED display technology, and is a novel integrated composite body with the conventional technology. As the technology is further developed towards integration, array transfer and full color, the great application potential thereof draws high attention in academia.
In order to realize full-color display, the mass transfer technology is usually an indissoluble ring, namely three-color Micro-LED chips grown on different epitaxial wafers are transferred onto a target substrate in a large amount according to an array rule. The improvement of the transfer efficiency and the transfer precision is a technical difficulty, but various manufacturers usually solve the problems and generate new problems: such as laser assisted transfer, although providing efficient, high precision transfer; but also has the defects of high machine cost, the need of matching an LED epitaxial wafer and the like. The high cost of the mass transfer technology is the main reason that the price of Micro-LED products in the market is high at present, and the development of a new generation of display technology is limited. At present, a huge transfer scheme which has low cost, simple process and high expansibility and can provide enough transfer efficiency and transfer precision to meet the requirements of mass production and research is urgently needed in the market.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a method for realizing mass transfer based on laser de-bonding and application thereof.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a method for realizing mass transfer based on laser debonding comprises the following steps:
a) Providing a transfer device, wherein the transfer device comprises a transparent transfer substrate and a plurality of boss structures arranged on a transfer surface of the transfer substrate, sequentially forming a laser release layer and a temporary bonding layer which cover the boss structures on the transfer surface, and connecting an element to be transferred to the boss structures through the temporary bonding layer;
b) Providing a target substrate, wherein the target substrate is provided with a plurality of pad areas; aligning the transfer device with the target substrate to enable the pad surfaces of the elements to be opposite to the pad areas of the target substrate one by one, and carrying out hot-pressing bonding on the elements and the target substrate;
c) Enabling laser to act on the laser release layer through the transfer substrate and the boss structure, and separating the element from the transfer device;
d) And removing the temporary bonding layer remained on the element.
Optionally, in step a), the boss structure is formed by etching the transfer substrate itself; or a transparent material layer formed on the surface of the etching transfer substrate.
Optionally, the target substrate includes an RDL layer, a dielectric layer is disposed on the RDL layer and separates the pad region by the dielectric layer, the pad region includes a pad and a solder ball structure connected to the pad, the pad surface of the component is provided with a pin end, and the solder ball structure and the pin end are in one-to-one correspondence.
Optionally, in the step b), the transfer device and the target substrate are respectively provided with a mark point, and alignment is achieved by aligning the mark points of the transfer device and the target substrate with the camera.
Optionally, in step c), the adopted laser is ultraviolet/near ultraviolet light with a wavelength less than 415nm, and the bonding is released in a specific area or on the whole by means of laser scanning or whole exposure.
A manufacturing method of a full-color Micro-LED display device is characterized in that blue light chips, red light chips and green light chips are respectively transferred to a target substrate in batches by adopting the method for realizing massive transfer based on laser de-bonding; the pad area of the target substrate is arranged according to an array with three colors alternately in the x direction, and the distance between two adjacent boss structures in the x direction of the transfer device is more than 2 times of the length of the chip in the x direction.
Optionally, the thickness of the laser release layer is less than 0.5 μm, and the thickness of the temporary bonding layer is 10-40 μm.
Optionally, the method further includes the steps of performing transfer yield detection and filling up chip vacancies.
Optionally, the step of transfer yield detection is:
1) Defining pixel points, wherein each pixel point comprises two units, and each unit comprises a three-color chip;
2) And checking chip loss of each pixel point, and judging that the chip vacancy needs to be filled if two chips with the same color of one pixel point are both lost.
Optionally, the step of filling the chip vacancy is:
1) Covering a reflecting layer on the surface of the transfer substrate opposite to the transfer surface, wherein the reflecting layer is provided with a window of a boss structure corresponding to the filling operation; sequentially forming a laser release layer and a temporary bonding layer on the transfer surface, and connecting the chip to be transferred to the boss structure through the temporary bonding layer;
2) And placing the transfer substrate above the target substrate, aligning, acting the laser on the laser release layer through the window by adopting laser, releasing the corresponding chip, dropping the chip onto the vacant position of the target substrate, and then performing reflow soldering.
Optionally, filling up the chip vacancy can also be realized by the following method:
1) Processing the etched transparent material layer on the transfer substrate by a laser ablation method to form different boss structures, and further connecting the device with the defined boss structures during temporary bonding;
2) And placing the transfer substrate above the target substrate and aligning, acting laser on the laser release layer to release all chips connected with the boss structure and drop the chips onto the vacant position of the target substrate, and then performing reflow soldering.
The invention has the beneficial effects that:
1. the manufacturing process is easy to realize, the flow is simple, the transfer substrate can be repeatedly used after being cleaned, and the cost is low;
2. the chip is bonded and fixed with the target substrate and then separated from the transfer substrate, so that the offset problem possibly generated by free fall of the chip during release is avoided, and the extremely high transfer precision is ensured;
3. a temporary bonding layer is arranged between the chip and the laser release layer, so that the chip and the transfer substrate are conveniently fixed temporarily, and the chip is prevented from being damaged in the laser ablation process as a protective layer, and the yield of the transferred chip is improved;
4. the technical scheme provides a solution for solving the problem of vacancy caused by element detection and screening, optimizes the transfer process, and reduces the transfer time and the transfer cost.
Drawings
FIGS. 1 to 4 are schematic process diagrams of steps 1 to 4 of the method for realizing bulk transfer based on laser debonding according to example 1;
FIG. 5 is a schematic view of a process of transferring the blue-light chip of embodiment 2 to a target substrate;
fig. 6 is a schematic diagram illustrating a process of transferring a three-color chip to a target substrate according to embodiment 2, wherein (a) is a top view of an arrangement of a blue-light chip after transfer on the target substrate, and (b) is a top view of an arrangement of the three-color chip after transfer on the target substrate;
FIG. 7 is a sectional view of the arrangement of the three-color chips on the target substrate after transfer in example 2;
fig. 8 is a top view of the arrangement of the three-color chips on the target substrate in the absence condition after the transfer of example 2;
fig. 9 is a schematic view of the process of filling the gap by the transfer device in example 2.
Detailed Description
The invention is further explained below with reference to the figures and the specific embodiments. The drawings are only schematic and can be easily understood, and the specific proportion can be adjusted according to design requirements. The definitions of the top and bottom relationships of the relative elements and the front and back sides of the figures described herein are understood by those skilled in the art to refer to the relative positions of the components and thus all of the components may be flipped to present the same components and still fall within the scope of the present disclosure.
Example 1
The method comprises the following steps: referring to fig. 1, a transfer device 1 is fabricated to perform primary bonding of a component 2 to be transferred.
A transparent transfer substrate 101 is provided, the transfer substrate 101 being, for example, transparent glass, having a thickness in the range of 0.5-2mm. The back surface of the transfer substrate 101 is used as a transfer surface, the transfer surface is provided with a plurality of square boss structures 102, and the boss structures 102 can be obtained by etching the transfer substrate 101 or can be formed by other materials; for example, the material of the mesa structure 102 is PI, which is transparent and has a thickness in the range of 5-60 μm, and can be obtained by coating, photolithography, development, etching and hard baking, and the size of the mesa structure is slightly larger than the size of the component 2 to be bonded, so as to pick up a chip at a specific position in the component array.
And sequentially manufacturing a laser release layer 103 and a temporary bonding layer 104 on the transfer surface by using spin coating and baking. WLP LB210 can be selected as the laser release layer 103, and the thickness range is 0-0.5 μm; the temporary bonding layer 104 may be selected from WLP TB4130 with a thickness in the range of 10-40 μm. Wherein the mesa structure 102 and the laser release layer 103 and the temporary bonding layer 104 on the mesa structure 102 constitute a single transfer head 1a.
And carrying out thermocompression bonding on the transfer device 1 and the element 2 to be transferred, and aligning the transfer head 1a and the element 2 by aligning mark points of the transfer device 1 and the element 2 to be transferred through a camera before bonding. The individual transfer heads 1a on the transfer device 1 correspond one-to-one to the individual components 2. The one-to-one correspondence described herein means one transfer head 1a for each component 2. The temporary fixation of the component 2 to the transfer device 1 is achieved by thermocompression bonding of the temporary bonding layer 104, wherein the thermocompression bonding temperature ranges from 200 to 220 ℃. Specifically, the component 2 has a pad surface on which a lead terminal 201 is provided, and the side of the component 2 opposite to the pad surface is bonded to the transfer head 1a through the temporary bonding layer 104.
Step two: referring to fig. 2, the element to be transferred 2 is secondarily bonded to the target substrate 3.
The target substrate 3 is provided with an RDL layer 303, a dielectric layer 302 is arranged on the RDL layer 303, a plurality of bonding pad areas are arranged in the dielectric layer 302, and the dielectric layer 302 plays a role in isolating different element circuits. The pad area includes a pad 301 and a solder ball structure 304 connected to the pad 301. The transfer device 1 with the components 2 is placed above the target substrate 3, each component 2 is aligned with one pad area by aligning the camera with the mark points on the transfer device 1 and the target substrate 3, and the pin ends 201 of the components 2 correspond to each group of pads 301 and solder ball structures 304 on the target substrate 3 one by one, and thermocompression bonding is performed. The thermocompression bonding is a bonding method using heating and pressurizing force, and has the characteristics of high precision requirement, relatively lower required welding temperature and the like compared with reflow welding. After the device 2 is bonded to the target substrate 3, the lead terminal 201 is connected to the target substrate 3, and is electrically connected to the driving module and the control module through the RDL layer 303.
Step three: referring to fig. 3, laser debonding.
The used laser wavelength is 355nm, and the total energy reaches 200-300mJ/cm 2 The laser is applied to the laser release layer 103 through the transfer substrate 101 and the mesa structure 102, so that the laser is rapidly decomposed, and the element 2 with the temporary bonding layer 104 is released, thereby transferring the element 2 to the target position of the target substrate 3. The laser release layer 103 can be ablated under the irradiation of laser, the temporary bonding layer 104 can be used for realizing the temporary bonding of the element 2 and the transfer device 1, and can also be used as a protective layer of the element, so that the situation that the surface of the element 2 is polluted by the ablation residue of the laser release layer 103 is avoided, and the yield of the transferred element can be greatly improved.
Step four: referring to fig. 4, the temporary bonding layer and the laser release layer remaining on the component 2 are removed, wherein the laser release layer can be removed by an alkali cleaning process through ultrasonic cleaning in a 5% NaOH solution at 60 ℃; the temporary bonding layer can be removed by WLP TBR2 immersion.
The component is temporarily fixed with the transfer device in the transfer process, and is separated from the transfer device after being bonded with the target substrate (namely, positioned and fixed), so that the problem of offset generated in the movement process that the component falls from the transfer device to the target substrate is avoided, and the transfer precision is ensured.
Example 2
A manufacturing method of a full-color Micro-LED display device needs to respectively carry out batch transfer and arrangement of blue light, red light and green light chip arrays, the transfer sequence of the three-color array is not limited, and the sequence of a blue light chip 2-1, a green light chip 2-2 and a red light chip 2-3 is taken as an example for explanation.
The blue chips 2-1 are picked up from the blue chip array and transferred to the target substrate 3 according to the procedure of example 1. As shown in fig. 5, the distance between two adjacent bump structures 102 in the x direction of the transferring device 1 of the present embodiment is greater than 2 times the length of the chip in the x direction. The pad regions of the target substrate 3 are arranged in an array of three colors alternating in the x direction. Thus, the arrangement of the transferred blue chip 2-1 on the target substrate 3 is as shown in fig. 6 (a).
The above steps are repeated to transfer the green chips 2-2 and the red chips 2-3 to the corresponding positions of the target substrate 3, respectively, to ensure that the three-color chips having a dimensional error are assembled on the target substrate 3 in the order shown in fig. 6 (b), which is a sectional view shown in fig. 7.
After the transfer of the three-color chip is finished, the steps of detecting the transfer yield and filling up the chip vacancy are also needed.
In practice, if the chip array before transfer is left vacant after the defective elements are removed. Then, after the elements on the array are transferred, the obtained array also has a vacancy, as shown by a dotted line frame in fig. 8, the chip defining each color of each pixel includes 2 chips (including 2 blue light chips, 2 green light chips, and 2 red light chips), the three-color chip positioned on the upper side is defined as a main chip unit, and the three-color chip positioned on the lower side is defined as a spare chip unit, as shown in fig. 8 (a), when only a chip vacancy exists in the three-color chip of the main chip unit, a color-changing chip at the spare chip is started to replace display, and the chip vacancy does not affect normal display; as shown in fig. 8 (b), if the primary chip and the standby chip of the same color in a certain pixel are both empty, the empty component needs to be transferred and filled repeatedly.
Referring to fig. 9, taking the red light chip missing in fig. 8 (b) as an example, the transfer device of embodiment 1 is adopted, the surface of the transfer substrate 101 opposite to the transfer surface is covered with a reflective layer 105, and the reflective layer 105 is provided with a window 105a of the boss structure 102 corresponding to the missing operation. The light reflecting layer 105 may be, for example, a deposited layer of light reflecting metallic titanium. Sequentially manufacturing a laser release layer 103 and a temporary bonding layer 104 on the transfer surface, and connecting the chip to be transferred to the boss structure 102 through the temporary bonding layer 104; and (3) placing the transfer substrate above the target substrate and aligning, acting laser on the laser release layer 103 through the window 105a by adopting laser, releasing and dropping the corresponding chip 2-3A into a small space formed by elements at two sides of the vacancy of the target substrate 3, and finally performing reflow soldering to finish the transfer and the electric connection of the vacancy element. It is understood that the temporary bonding layer remaining on the chip may be uniformly removed after the filling-up step.
Additionally, filling in chip vacancies can also be achieved by:
1) Forming boss structures only at positions of the transfer substrate corresponding to the positions needing to be repaired, specifically processing the etched transparent material layer on the transfer substrate by a laser ablation method to form different boss structures, and further connecting the device with the defined boss structures during temporary bonding;
2) And placing the transfer substrate above the target substrate and aligning, acting laser on the laser release layer to release all chips connected with the boss structure and drop the chips onto the vacant position of the target substrate, and then performing reflow soldering. In the embodiment, the gap is accurately filled by arranging the boss structure at the specific position, and then the whole laser acts on the release layer without arranging a reflecting layer and opening a window.
The above embodiments are only used to further illustrate the method and application of the present invention for realizing bulk transfer based on laser debonding, but the present invention is not limited to the embodiments, and any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical spirit of the present invention fall within the protection scope of the technical solution of the present invention.
Claims (11)
1. A method for realizing mass transfer based on laser debonding is characterized by comprising the following steps:
a) Providing a transfer device, wherein the transfer device comprises a transparent transfer substrate and a plurality of boss structures arranged on a transfer surface of the transfer substrate, a laser release layer and a temporary bonding layer which cover the boss structures are sequentially formed on the transfer surface, and an element to be transferred is connected to the boss structures through the temporary bonding layer;
b) Providing a target substrate, wherein the target substrate is provided with a plurality of pad areas; aligning the transfer device with the target substrate to enable the pad surfaces of the elements to be opposite to the pad areas of the target substrate one by one, and carrying out hot-pressing bonding on the elements and the target substrate;
c) Enabling laser to act on the laser release layer through the transfer substrate and the boss structure to separate the element from the transfer device;
d) And removing the temporary bonding layer remained on the element.
2. The method of claim 1 for achieving bulk transfer based on laser debonding, comprising: in the step c), the adopted laser is ultraviolet/near ultraviolet with the wavelength less than 415nm, and the bonding of a specific area or the whole area is realized in a laser scanning or whole area exposure mode.
3. The method of claim 1 for achieving bulk transfer based on laser debonding, comprising: in step a), the boss structure is formed by etching the transfer substrate itself; or forming a transparent material layer on the surface of the transfer substrate and etching the transparent material layer.
4. The method of claim 1 for achieving bulk transfer based on laser debonding, comprising: the target substrate comprises an RDL layer, a dielectric layer is arranged on the RDL layer and divides the pad area through the dielectric layer, the pad area comprises a pad and a tin ball structure connected with the pad, pin ends are arranged on the pad surface of the element, and the tin ball structure and the pin ends are in one-to-one correspondence.
5. The method of claim 1 for achieving mass transfer based on laser debonding, wherein: in the step b), the transfer device and the target substrate are respectively provided with mark points, and alignment is realized by aligning the mark points of the transfer device and the target substrate through the camera.
6. A manufacturing method of a full-color Micro-LED display device is characterized by comprising the following steps: respectively transferring blue light chips, red light chips and green light chips to a target substrate in batches by adopting the method for realizing mass transfer based on laser debonding according to any one of claims 1 to 5; the pad area of the target substrate is arranged according to an array with three colors alternately in the x direction, and the distance between two adjacent boss structures in the x direction of the transfer device is more than 2 times of the length of the chip in the x direction.
7. The method for manufacturing the full-color Micro-LED display device according to claim 6, wherein: the thickness of the laser release layer is less than 0.5 μm, and the thickness of the temporary bonding layer is 10-40 μm.
8. The method for manufacturing the full-color Micro-LED display device according to claim 6, wherein: the method also comprises the steps of detecting the transfer yield and filling up the chip vacancy.
9. The method for manufacturing the full-color Micro-LED display device according to claim 8, wherein: the transfer yield detection comprises the following steps:
1) Defining pixel points, wherein each pixel point comprises two units, and each unit comprises a three-color chip;
2) And checking chip loss of each pixel point, and judging that the chip vacancy needs to be filled if two chips with the same color of one pixel point are both lost.
10. The method for manufacturing the full-color Micro-LED display device according to claim 8, wherein the step of filling the chip vacancy is as follows:
1) Covering a reflecting layer on the surface of the transfer substrate opposite to the transfer surface, wherein the reflecting layer is provided with a window of a boss structure corresponding to the filling operation; sequentially forming a laser release layer and a temporary bonding layer on the transfer surface, and connecting the chip to be transferred to the boss structure through the temporary bonding layer;
2) And placing the transfer substrate above the target substrate, aligning, applying laser to the laser release layer through the window to release the corresponding chip and drop the chip onto the vacant position of the target substrate, and performing reflow soldering.
11. The method for manufacturing the full-color Micro-LED display device according to claim 8, wherein the step of filling the chip vacancy is as follows:
1) Forming a boss structure on the transfer substrate corresponding to the position needing to be repaired, sequentially forming a laser release layer and a temporary bonding layer on the transfer surface, and connecting the chip to be transferred to the boss structure through the temporary bonding layer;
2) And placing the transfer substrate above the target substrate and aligning, acting laser on the laser release layer to release all chips connected with the boss structure and drop the chips onto the vacant position of the target substrate, and then performing reflow soldering.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116247137A (en) * | 2023-05-11 | 2023-06-09 | 季华实验室 | Full-color Micro LED chip and preparation method thereof |
| CN116314492A (en) * | 2023-05-25 | 2023-06-23 | 江西兆驰半导体有限公司 | Full-color Micro LED device and preparation method thereof |
| CN117317079A (en) * | 2023-11-29 | 2023-12-29 | 昆山麦沄显示技术有限公司 | Preparation technology of chip mass transfer arrangement |
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| CN114649199A (en) * | 2022-03-14 | 2022-06-21 | 深圳先进电子材料国际创新研究院 | Laser de-bonding method and application thereof |
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| CN116247137A (en) * | 2023-05-11 | 2023-06-09 | 季华实验室 | Full-color Micro LED chip and preparation method thereof |
| CN116314492A (en) * | 2023-05-25 | 2023-06-23 | 江西兆驰半导体有限公司 | Full-color Micro LED device and preparation method thereof |
| CN117317079A (en) * | 2023-11-29 | 2023-12-29 | 昆山麦沄显示技术有限公司 | Preparation technology of chip mass transfer arrangement |
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