CN112047297A - Micro-area heating array capable of positioning and temperature control and use method for selectively transferring semiconductor micro-nano integrated element - Google Patents
Micro-area heating array capable of positioning and temperature control and use method for selectively transferring semiconductor micro-nano integrated element Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 217
- 239000004065 semiconductor Substances 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 60
- 238000003466 welding Methods 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 230000008439 repair process Effects 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 33
- 238000005516 engineering process Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 238000005485 electric heating Methods 0.000 claims description 5
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 4
- 229910018096 ScF3 Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 4
- OEKDNFRQVZLFBZ-UHFFFAOYSA-K scandium fluoride Chemical compound F[Sc](F)F OEKDNFRQVZLFBZ-UHFFFAOYSA-K 0.000 claims description 4
- 239000012815 thermoplastic material Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 229910020187 CeF3 Inorganic materials 0.000 claims description 2
- 229910004504 HfF4 Inorganic materials 0.000 claims description 2
- 229910002319 LaF3 Inorganic materials 0.000 claims description 2
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 229920001328 Polyvinylidene chloride Polymers 0.000 claims description 2
- 229910004364 ThF3 Inorganic materials 0.000 claims description 2
- 229910004369 ThO2 Inorganic materials 0.000 claims description 2
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 239000012994 photoredox catalyst Substances 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920002530 polyetherether ketone Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 239000004626 polylactic acid Substances 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 239000005033 polyvinylidene chloride Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 claims description 2
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 141
- 239000010408 film Substances 0.000 description 14
- 239000012790 adhesive layer Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 229910001020 Au alloy Inorganic materials 0.000 description 4
- 229910000599 Cr alloy Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
Abstract
The invention provides a micro-area heating array capable of positioning and controlling temperature and a using method thereof for selectively transferring a semiconductor micro-nano integrated element, comprising a micro-area heating array and a program control system, wherein the micro-area heating array comprises: the electrode layer I comprises an array of n electrodes I and a lead I part, and the electrode layer II comprises an array of n electrodes II and a lead II part. The micro-area heating array capable of positioning and controlling temperature can control the temperature of a specified position in the array; the micro-area heating array capable of positioning and controlling temperature simultaneously has an independent temperature control driving function and an independent semiconductor micro-nano integrated element driving function; the semiconductor micro-nano integrated element can be selectively transferred, so that the problems of large-scale selective transfer, removal, welding and semiconductor element repair are solved; the production yield is improved and the later maintenance work is facilitated.
Description
Technical Field
The invention relates to a micro-area heating array technology, in particular to a positionable temperature control micro-area heating array technology for selective transfer of a semiconductor micro-nano integrated element, which can transfer, remove, weld and repair elements at one or more positions of a specified position in a micro-nano integrated array.
Background
Since the 60 s of the 20 th century, the integration of elements in large-scale integrated circuits has been rapidly developed at a rate of doubling every 18 months on average according to Moore's law, and miniaturization and high-density integration of devices have been in the trend. However, integration and packaging issues are one of the major obstacles to the commercialization of micro-scale integrated devices such as radio frequency micro-electromechanical system (MEMS) micro-switches, light emitting diode display systems, MEMS or quartz oscillators. Among them, cell transfer and yield are critical for such small-sized, high-density integrated devices. The traditional transfer technique uses a one-by-one die attach method. The method for die bonding one by one is not only very limited in the process of transferring a large number of chips, but also has defects in the aspects of arrangement uniformity, high consistency and high repeatability of integrated units, and dead spots are easy to occur. Aiming at the massive transfer of chips, the huge Micro LED units are grabbed by using electrostatic force, Vanderwatt force and magnetic force in the field of LEDs, and the large-batch transfer work of the units is realized by using selective laser release, a fluid self-assembly technology and a transfer printing technology. However, the integration technique described above is only suitable for a single transfer and assembly process, and selective transfer cannot be performed after the units are integrated. For the dead pixel, the positioning removal, welding and repair can not be achieved, and the yield of the chip and the later maintenance work are difficult to guarantee.
Disclosure of Invention
The invention aims to provide a micro-area heating array capable of positioning and controlling temperature and a using method thereof for selectively transferring a semiconductor micro-nano integrated element, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: a positionable temperature controlled micro-zone heating array comprising a micro-zone heating array and a program control system, said micro-zone heating array comprising: the electrode layer I comprises an array of n electrodes I and a lead I part, and the electrode layer II comprises an array of n electrodes II and a lead II part;
the structure of the micro-area heating unit comprises: a substrate; an electrode I disposed on the substrate; the heating layer I is arranged on the electrode I and is made of an electric heating material; the insulating layer I covers the substrate, the electrode I and the heating layer I, the main purpose of the insulating layer I is to isolate the electrode I and the electrode II, the insulating layer I is provided with a hollow part, and the hollow part exposes part or all of the heating layer I; the electrode II is arranged on the insulating layer I and does not cover the hollow part of the insulating layer I; the heating layer II is arranged on the electrode II and is made of an electric heating material; the insulating layer II is arranged on the insulating layer I and the electrode II, the insulating layer II does not cover the hollow part of the insulating layer I, and the hollow part of the insulating layer II is arranged to expose the heating layer II; the bonding layers are arranged in the hollow parts of the insulating layer I and the insulating layer II, the bonding layers are made of conductive materials and thermoplastic materials with the melting points lower than those of the electrode I and the electrode II, and the bonding layers are directly contacted with the heating layer I and the heating layer II to form a contact;
the program control system is a circuit control system edited by a program, an electrode I and an electrode II of a single or a plurality of micro-area heating units are communicated to form a loop, a specified electrical signal is applied to the communicated micro-area heating units to regulate and control the temperature, and the bonding layer is melted and solidified to selectively transfer the corresponding semiconductor micro-nano integrated element on the micro-area heating unit.
In order to obtain better thermal insulation within the micro-district heating unit, the insulating layer I and the insulating layer II are preferably low thermal conductivity dielectric materials comprising: SiO 22、GaN、AlN、TiO2、ZnO、ZrO2、ThO2、Al2O3、Cr2O3、CeO2、AlF3、CeF3、HfF4、ScF3、YF3、ScF3、ThF3、LaF3、MgF2、ZnS、Ta2O5One or more of them.
Preferably, the adhesive layer is a conductive material and a thermoplastic material with a melting point lower than 300 ℃, and comprises: one or more of In, Bi, Sn, Ag, Cu, Au, Ga and Sn, and one or more of PMMA, POM, PBT, PCL, PET, PC, PE, PEEK, PLA, PP, PS and PVDC.
The micro-area heating array can use an external circuit as a part of the electrode layer I and the electrode layer II, integrates n micro-area heating units to form the array, and can also directly manufacture the electrode layer I, the electrode layer II and the n micro-area heating units on the substrate by using an in-situ manufacturing method to form the micro-area heating array.
In order to provide better thermal insulation between the micro-area heating units, the substrate preferably has a single or a plurality of independent steps, and the micro-area heating units are arranged on the steps.
In order to enable the micro-area heating array capable of positioning and controlling temperature to simultaneously have an independent temperature control driving function and an independent semiconductor micro-nano integrated element driving function, and to distinguish the use methods of the two functions by adjusting the positive and negative polarities of electric signals or the strength of the electric signals, control loops driven by the temperature control driving and the semiconductor micro-nano integrated element can share one group of loops, or two or more groups of control loops can be independently arranged, wherein under the condition of sharing one group of loops, the micro-area heating array capable of positioning and controlling temperature and electrodes of the semiconductor micro-nano integrated element are required to be connected to form a loop.
Furthermore, the temperature control drive and the semiconductor micro-nano integrated element drive share a group of loops and a group of contacts, the heating layer I and the heating layer II are conductive electroheating materials and comprise ITO, AZO and IGZO, and one or more of the micro-area heating array, the program control system and the semiconductor micro-nano integrated element are introduced into the rectifying element. One or more introduced rectifying elements in the semiconductor micro-nano integrated element comprise NPN and PNP structures of the semiconductor micro-nano integrated element. Further preferably, the rectifying element is a zener diode.
Further, control by temperature change drive and the drive of the semiconductor micro-nano integrated element set to be independent two sets of and above control circuit, share a set of contact, zone of heating I and zone of heating II be conductive electrogenerated heating material, including ITO, AZO, IGZO, zone of heating I, one or two in the zone of heating II, increase an electrode at least, zone of heating I and zone of heating II have an independent control circuit, do not need external semiconductor micro-nano integrated element to carry out the control by temperature change, make the control by temperature change drive of the micro-zone heating array that can fix a position the control by a set of return circuit control, the drive of the semiconductor micro-nano integrated element is by another set of return circuit control.
Furthermore, the temperature control drive and the semiconductor micro-nano integrated element drive are set into two or more independent control loops without sharing contacts, the heating layer I and the heating layer II can be conductive electroheating materials or non-conductive electroheating materials, the micro-area heating unit is adjusted to have at least one contact participating in the temperature control drive, the semiconductor micro-nano integrated element drive is completed by two or more other electrodes, so that the temperature control drive of the micro-area heating array capable of positioning and controlling the temperature is controlled by one loop, and the semiconductor micro-nano integrated element drive is controlled by the other loop.
Further, the micro-area heating array can be driven in a passive mode, and a heating layer and a bonding layer can be arranged on an active driving circuit.
The use method for selectively transferring the semiconductor micro-nano integrated element of the micro-area heating array capable of positioning and controlling temperature comprises the following steps: a transfer process in which the component at the designated position is moved from one position to another position; a removal process of removing the component at the designated position from the original position; a welding process of welding the components at the designated positions; and (3) carrying out a repairing process for repairing the element at the specified position.
The micro-area heating array capable of positioning and controlling temperature can be used in a selective transfer process of single or batch semiconductor micro-nano integrated elements, preferably, a program control system is communicated with single or multiple micro-area heating units at specified positions, the micro-area heating units at the specified positions heat a bonding layer, and the bonding layer is melted; the micro-area heating array capable of positioning and controlling temperature is contacted with the semiconductor micro-nano integrated elements on a group of receiving substrates, and the semiconductor micro-nano integrated elements are pressed into the melted bonding layer; the program control system cuts off a connecting passage of the micro-area heating unit, and the bonding layer is solidified; the semiconductor micro-nano integrated element at the appointed position is picked up by the micro-area heating array capable of positioning and controlling temperature, and is contacted with the other group of receiving substrates; the program control system is communicated with the single or a plurality of micro-area heating units at the designated position, the micro-area heating units at the designated position heat the bonding layer, and the bonding layer is melted; the micro-area heating array capable of positioning and controlling temperature is separated from the receiving substrate, and the placing process of the semiconductor micro-nano integrated element is completed.
The micro-area heating array capable of positioning and controlling temperature can be used in a selective welding process of single or batch semiconductor micro-nano integrated elements, preferably, the micro-area heating array capable of positioning and controlling temperature is in alignment contact with the semiconductor micro-nano integrated elements, so that electrodes of the semiconductor micro-nano integrated elements are aligned with the bonding layer, and for inverted semiconductor micro-nano integrated elements, a one-time transfer technology can be selected, so that the electrodes of the semiconductor micro-nano integrated elements are exposed; the program control system is communicated with the single or a plurality of micro-area heating units at the designated position, the micro-area heating units at the designated position heat the bonding layer, and the bonding layer is melted; the program control system cuts off a connecting passage of the micro-area heating unit, and the bonding layer is solidified; and finishing the welding process of the semiconductor micro-nano integrated element at the designated position.
The micro-area heating array capable of positioning and controlling temperature can be used in a selective removal process of single or batch semiconductor micro-nano integrated elements, preferably, the semiconductor micro-nano integrated elements are welded on the micro-area heating array capable of positioning and controlling temperature, the program control system is communicated with single or multiple micro-area heating units at specified positions, the micro-area heating units at the specified positions heat the bonding layer, and the bonding layer is melted; and picking up the semiconductor micro-nano integrated element at the melting position of the bonding layer by using a transfer technology to complete the removal process of the semiconductor micro-nano integrated element, wherein the transfer technology can be a non-selective transfer technology.
The micro-area heating array capable of positioning and controlling temperature can be used in a selective repairing process of single or batch semiconductor micro-nano integrated elements, preferably, the semiconductor micro-nano integrated elements are welded on the micro-area heating array capable of positioning and controlling temperature, a program control system is communicated with single or multiple micro-area heating units at specified positions, a driving function of the semiconductor micro-nano integrated elements is started, dead points are tested, and the positions are determined; removing the semiconductor micro-nano integrated element at the dead point position by utilizing the selective removal process of the micro-area heating array capable of positioning and controlling temperature on the semiconductor micro-nano integrated element; welding a new semiconductor micro-nano integrated element at the position of the removed dead point by utilizing the selective welding process of the micro-area heating array capable of positioning and controlling temperature on the semiconductor micro-nano integrated element; and finishing the selective repair of the semiconductor micro-nano integrated element.
The invention has the beneficial effects that:
the micro-area heating array capable of positioning and controlling temperature can control the temperature of a specified position in the array; the micro-area heating array capable of positioning and controlling temperature simultaneously has an independent temperature control driving function and an independent semiconductor micro-nano integrated element driving function; the semiconductor micro-nano integrated element can be selectively transferred, so that the problems of large-scale selective transfer, removal, welding and semiconductor element repair are solved; the production yield is improved and the later maintenance work is facilitated.
Drawings
Some preferred embodiments of the invention will now be described, by way of example only, with reference to the accompanying drawings, in which:
FIG. 1 shows an exemplary block diagram outlining a micro-zone heating unit according to the present invention;
FIG. 2 shows a micro-zone heating unit with independent steps of a substrate;
FIG. 3 shows a schematic and perspective view of an 8X 8 micro-zone heating array;
fig. 4 shows a schematic circuit diagram of a circuit in which the temperature control drive and the semiconductor micro-nano integrated element drive share a set of circuits and a set of contacts, and the temperature control drive and the semiconductor micro-nano integrated element drive are individually controlled by different electric signals;
FIG. 5 shows a schematic and perspective view of another 8X 8 micro-zone heating array;
fig. 6 shows a schematic circuit diagram of a circuit in which the temperature control drive and the semiconductor micro-nano integrated element drive are arranged into two separate sets of loop controls, share a set of contacts, and are controlled separately;
FIG. 7 shows a schematic diagram of a positionally positionable temperature controlled micro-zone heating array for heating a bonding layer at a specified position;
FIG. 8 shows the selective transfer process of a positionally-controllable temperature-controlled Micro-zone heating array to Micro LED elements;
FIG. 9 shows a distribution of three color red, blue, green Micro LED elements bonded to a positionally controllable temperature-controlled Micro zone heating array;
FIG. 10 shows a process for fabricating a red, blue and green three-color Micro LED light module using a positionally-controllable temperature-controlled Micro-zone heating array;
FIG. 11 shows a positionable temperature controlled Micro-zone heating array locked Micro LED bad part position;
FIG. 12 shows a process for repairing Micro LED dies using a positionally-controllable temperature-controlled Micro zone heating array.
Illustration of the drawings: 100. a micro-area heating unit; 101. a substrate; 102. an electrode I; 103. a heating layer I; 104. an insulating layer I; 105. an electrode II; 106. a heating layer II; 110. an insulating layer II; 111. an insulating layer II covering the electrode I and the insulating layer I; 112. an insulating layer II covering the heating layer I and the insulating layer I; 113. an insulating layer II covering the electrode II; 114. an insulating layer II covering the heating layer II; 115. an insulating layer II covering the substrate step and the insulating layer I; 107A and an adhesive layer I; 107B, an adhesive layer II; 200. a micro-area heating array; 210. an electrode layer I including 211 and 218 word lines; 220. an electrode layer II including 221-228 bit lines; 001. a program control system; 002. a semiconductor micro-nano integrated element; 003. a rectifying element; 300. a Micro LED element; 301. a Micro LED electrode I; 302. a Micro LED electrode II; 400. an original substrate; 500. receiving a substrate; 310. a red Micro LED element; 320. a green Micro LED element; 330. a blue Micro LED element; 340. and (5) breaking the parts.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below by way of the drawings are illustrative only and are not to be construed as limiting the invention.
Example one
The invention provides a micro-area heating unit. The structure is shown in FIG. 1, the size of the substrate 101 is 20 μm × 60 μm; the thickness of the electrode I102 is 200nm, the width is 10 μm, and the electrode I can be connected with an external circuit; the thickness of the heating layer I103 is 30nm, and the size is 12 Mum multiplied by 17 Mum; the thickness of the insulating layer I104 is 30nm, and the hollow size is 10 micrometers multiplied by 15 micrometers; the thickness of the electrode II105 is 200nm, the width is 10 μm, and the electrode II can be connected with an external circuit; the thickness of the heating layer II106 is 30nm, and the size is 12 Mum multiplied by 17 Mum; the insulating layer II110 is 30nm in thickness and 10 microns multiplied by 15 microns in hollow size, and comprises an insulating layer II111 covering the electrode I102 and the insulating layer I104, an insulating layer II112 covering the heating layer I103 and the insulating layer I104, an insulating layer II113 covering the electrode II105 and an insulating layer II114 covering the heating layer II 106; the hollow parts on the heating layer I103 and the heating layer II106 are respectively provided with an adhesive layer I107A and an adhesive layer II107B, the length, the width and the height of the adhesive layer I107A are 13 microns, 8 microns and 100nm, and the length, the width and the height of the adhesive layer II107B are 13 microns, 8 microns and 70 nm.
Example two
The invention provides a micro-area heating unit. The structure is shown in FIG. 2, the substrate 101 has a size of 20 μm × 60 μm, and has protruding steps with a length, a width, and a height of 17 μm, 12 μm, and 100nm, respectively; the structure is shown in FIG. 1, the size of the substrate 101 is 20 μm × 60 μm; the thickness of the electrode I102 is 200nm, the width is 10 μm, and the electrode I can be connected with an external circuit; the thickness of the heating layer I103 is 30nm, and the size is 12 Mum multiplied by 17 Mum; the thickness of the insulating layer I104 is 30nm, and the hollow size is 10 micrometers multiplied by 15 micrometers; the thickness of the electrode II105 is 200nm, the width is 10 μm, and the electrode II can be connected with an external circuit; the thickness of the heating layer II106 is 30nm, and the size is 12 Mum multiplied by 17 Mum; the insulating layer II110 is 30nm in thickness and 10 microns multiplied by 15 microns in hollow size, and comprises an insulating layer II111 covering the electrode I102 and the insulating layer I104, an insulating layer II112 covering the heating layer I103 and the insulating layer I104, an insulating layer II113 covering the electrode II105 and an insulating layer II114 covering the heating layer II 106; the hollow parts on the heating layer I103 and the heating layer II106 are respectively provided with an adhesive layer I107A and an adhesive layer II107B, the length, the width and the height of the adhesive layer I107A are 13 microns, 8 microns and 100nm, and the length, the width and the height of the adhesive layer II107B are 13 microns, 8 microns and 70 nm.
EXAMPLE III
The invention provides a micro-area heating unit. The structure is shown in fig. 1 and fig. 2, a substrate 101 is a Si substrate; depositing a Cr/Au alloy film on a Si substrate by using an electron beam evaporation method, and preparing a Cr/Au alloy electrode I102 in a photoetching manner; preparing a heating layer I103 of an ITO material on the electrode I102 by using a film deposition and etching method; preparing a GaN film by using a film deposition method, and hollowing out the GaN film by using an etching method to form an insulating layer I104; depositing a Cr/Au alloy film on the insulating layer I104 by using an electron beam evaporation method, and preparing a Cr/Au alloy electrode II105 by using a photoetching mode; preparing a heating layer II106 of the ITO material by using a film deposition and etching method; preparing a GaN film by using a film deposition method, and hollowing out the GaN film by using an etching method to form an insulating layer II 110; the bonding layer adopts AuSn alloy.
Example four
The invention provides a micro-area heating unit. The structure is shown in FIG. 1 and FIG. 2, and substrate 101 is made of Al2O3A substrate; by electron beam evaporation on Al2O3Depositing a TiW alloy film on the substrate,preparing an electrode I102 of TiW alloy in an etching mode; preparing a heating layer I103 made of an IGZO material on the electrode I102 by using a film deposition and etching method; preparing an AlN thin film by using a thin film deposition method, and hollowing out the AlN thin film by using an etching method to form an insulating layer I104; depositing a TiW alloy film on the insulating layer I104 by using an electron beam evaporation method, and preparing an electrode II105 of the TiW alloy in a photoetching mode; preparing a heating layer II106 of the IGZO material by using a film deposition and etching method; preparing an AlN thin film by using a thin film deposition method, and hollowing out the AlN thin film by using an etching method to form an insulating layer II 110; the bonding layer is made of InBiSn alloy.
EXAMPLE five
The invention provides an 8 x 8 micro-area heating array.A temperature control drive and a semiconductor micro-nano integrated element drive share a group of loops and a group of contacts. The structure of the micro-area heating array is shown in fig. 3, and an in-situ manufacturing method is adopted to directly manufacture an electrode layer I210, an electrode layer II220 and 64 micro-area heating units 100 on a substrate to form a micro-area heating array 200. To facilitate understanding of the distribution of electrode layer I and electrode layer II in the micro-area heating array, a perspective view is given on the right side of fig. 3, in which electrode layer I210 is a comb-like structure. And the electrode layer I and the electrode layer II are connected with a program control system. To illustrate the locations of the micro-sector heating cells that receive the command, 211, 218, and 221, 228 bit lines are labeled.
EXAMPLE six
The invention provides an 8 x 8 micro-area heating array capable of positioning and controlling temperature, wherein a temperature control drive and a semiconductor micro-nano integrated element drive share a group of loops and a group of contacts, and the temperature control drive and the semiconductor micro-nano integrated element drive are independently controlled by different electric signals. The structure of the micro-area heating array is shown in figure 3, and the schematic circuit of the signal control is shown in figure 4. Fig. 4 shows circuit control by selecting the micro-area heating units in the first row and the first column in fig. 3, where 001 is a program control system, 002 is a semiconductor micro-nano integrated element, and 003 is a rectifier element. In the figure, the rectifier element 003 and the micro-area heating unit 100 are integrated into a whole, and the integration can be realized by introducing a Zener diode between two electrodes of the micro-area heating unit; in the figure, the rectifying element 003 and the semiconductor micro-nano integrated element 002 are integrated into a whole, and the integration can be realized by adopting a semiconductor micro-nano integrated element with NPN and PNP structures. As shown in fig. 4, the adhesive layer II107B is connected to the positive electrode of the circuit, and the voltage drop is mainly on the adhesive layers I107A and II107B, so as to realize the regulation and control of the cell temperature; when the bonding layer I107A is connected with the anode of the circuit, the voltage drop is mainly in the semiconductor micro-nano integrated element 002, and the driving of the semiconductor micro-nano integrated element is realized.
EXAMPLE seven
The invention provides an 8 x 8 micro-area heating array capable of positioning and temperature control, wherein a temperature control drive and a semiconductor micro-nano integrated element drive are set to be independent two groups of loop controls and share one group of contacts, the structure of the micro-area heating array is shown in figure 5, and an electrode layer I210, an electrode layer II220 and 64 micro-area heating units 100 are directly manufactured on a substrate by adopting an in-situ manufacturing method to form a micro-area heating array 200. Wherein the electrode layer II220 is divided into 220A and 220B, for facilitating understanding of the distribution of the electrode layer I and the electrode layer II in the micro-area heating array, a perspective view is given on the right side in fig. 5, wherein the electrode layer I210 and the electrode layer II220 are comb-shaped structures. Electrode layer I210 and electrode layer II220 are connected to a program control system. 220A and 220B are communicated, 210 and 220B are communicated to control the drive of the loop control temperature control, and 220A and 210 are communicated to control the drive of the semiconductor micro-nano integrated element. Fig. 6 shows the micro-area heating units in the first row and the first column of fig. 5 in a circuit control manner. 221A is communicated with 221B, 211 is communicated with 221B, and voltage drop mainly realizes regulation and control of unit temperature on the bonding layers I107A and II 107B; 221A is communicated with 211, the voltage drop is mainly in the semiconductor micro-nano integrated element 002, and the driving of the semiconductor micro-nano integrated element is realized.
Example eight
The invention provides a selective transfer technology of a Micro LED. As shown in FIG. 7, the bonding layer at the designated position is heated in an 8X 8 positionable temperature-controllable Micro-area heating array, the black area in the figure is the bonding layer melted by heating, and the bonding layers I107A and II107B in the Micro-area heating array 200 are aligned with and contacted with the Micro LED electrodes I301 and II302 in the Micro LED element 300. The Micro LED electrode I301 and the Micro LED electrode II302 are pressed into the melted bonding layer, the program control system disconnects a connecting passage of the Micro area heating unit, the bonding layer is solidified, the Micro area heating array 200 leaves the original substrate 400 of the Micro LED element 300, the Micro LED element 300 at the designated position of the Micro area heating array 200 is picked up and is aligned with the receiving substrate 500 to be contacted, the bonding layer of the Micro area heating unit at the designated position is melted, the Micro LED element 300 is peeled off from the Micro area heating array 200, and the transfer of the Micro LED element is completed. Fig. 7 shows the selective transfer position of the Micro LED elements. Fig. 8 demonstrates the selective transfer process from a side view.
Example nine
The invention provides a technology for preparing a red, blue and green Micro LED light-emitting module by using a selective transfer technology. Fig. 9 shows the distribution of red, blue and green three-color Micro LED elements in an 8 × 8 positionally-controllable Micro-zone heating array. 310 are red Micro LED elements, 320 are green Micro LED elements, and 330 are blue Micro LED elements. Fig. 10 demonstrates the selective transfer process from a side view. The red Micro LED element 310 is aligned with the Micro-area heating unit 100 at the designated position, the program control system sends a heating instruction to the welding position to melt the bonding layer I107A and the bonding layer II107B, the red Micro LED electrode I311 and the red Micro LED electrode II312 in the red Micro LED element 310 are pressed into the melted bonding layer, the program control system sends a cooling instruction to solidify the bonding layer at the designated position, the red Micro LED element 310 is separated from the original substrate 400 and is left at the designated position of the Micro-area heating array 200, and the welding process of the green Micro LED element 320 and the blue Micro LED element 330 is the same as that of the red Micro LED element 310.
Example ten
The invention provides a selective repairing technology of a Micro LED integrated array. And driving the Micro LED integrated array through a program control system to detect the electrical performance and lock the position of a damaged part. Fig. 11 shows the position of the bad part 340. Fig. 12 demonstrates the repair process from a side view. The program control system sends a temperature rise instruction to the bonding layer I107A and the bonding layer II107B at the position of the damaged piece, the bonding layer I107A and the bonding layer II107B are melted, the damaged piece is picked up by the receiving substrate 500 and separated from the micro-area heating array 200, and the purpose of removing the damaged piece is achieved. The new Micro LED element 300 is soldered to the original position by soldering technique. And the program control system sends a heating instruction to the bonding layer I107A and the bonding layer II107B at the position of the damaged part, and after the Micro LED element 300 is aligned and contacted, the program control system sends a cooling instruction to finish repairing the damaged part.
The foregoing merely represents preferred embodiments of the invention, which are described in some detail and detail, and therefore should not be construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, various changes, modifications and substitutions can be made without departing from the spirit of the present invention, and these are all within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (17)
1. A micro-area heating array capable of positioning and temperature control is characterized in that: the micro-area heating array comprises a micro-area heating array and a program control system, wherein the micro-area heating array comprises: the electrode layer I comprises an array of n electrodes I and a lead I part, and the electrode layer II comprises an array of n electrodes II and a lead II part;
the structure of the micro-area heating unit comprises: a substrate; an electrode I disposed on the substrate; the heating layer I is arranged on the electrode I and is made of an electric heating material; the insulating layer I covers the substrate, the electrode I and the heating layer I, the main purpose of the insulating layer I is to isolate the electrode I and the electrode II, the insulating layer I is provided with a hollow part, and the hollow part exposes part or all of the heating layer I; the electrode II is arranged on the insulating layer I and does not cover the hollow part of the insulating layer I; the heating layer II is arranged on the electrode II and is made of an electric heating material; the insulating layer II is arranged on the insulating layer I and the electrode II, the insulating layer II does not cover the hollow part of the insulating layer I, and the hollow part of the insulating layer II is arranged to expose the heating layer II; the bonding layers are arranged in the hollow parts of the insulating layer I and the insulating layer II, the bonding layers are made of conductive materials and thermoplastic materials with the melting points lower than those of the electrode I and the electrode II, and the bonding layers are directly contacted with the heating layer I and the heating layer II to form a contact;
the program control system is a circuit control system edited by a program, an electrode I and an electrode II of a single or a plurality of micro-area heating units are communicated to form a loop, a specified electrical signal is applied to the communicated micro-area heating units to regulate and control the temperature, and the bonding layer is melted and solidified to selectively transfer the corresponding semiconductor micro-nano integrated element on the micro-area heating unit.
2. A positionally controllable temperature controlled micro-zone heating array as claimed in claim 1, wherein: the insulating layer I and the insulating layer II are made of low-heat-conduction dielectric materials, and comprise: SiO 22、GaN、AlN、TiO2、ZnO、ZrO2、ThO2、Al2O3、Cr2O3、CeO2、AlF3、CeF3、HfF4、ScF3、YF3、ScF3、ThF3、LaF3、MgF2、ZnS、Ta2O5One or more of them.
3. A positionally controllable temperature controlled micro-zone heating array as claimed in claim 1, wherein: the bonding layer is made of a conductive material and a thermoplastic material with the melting point lower than 300 ℃, and comprises: one or more of In, Bi, Sn, Ag, Cu, Au, Ga and Sn, and one or more of PMMA, POM, PBT, PCL, PET, PC, PE, PEEK, PLA, PP, PS and PVDC.
4. A positionally controllable temperature controlled micro-zone heating array as claimed in claim 1, wherein: the micro-area heating array can use an external circuit as a part of the electrode layer I and the electrode layer II, integrates n micro-area heating units to form the array, and can also directly manufacture the electrode layer I, the electrode layer II and the n micro-area heating units on the substrate by using an in-situ manufacturing method to form the micro-area heating array.
5. A positionally controllable temperature controlled micro-zone heating array as claimed in claim 1, wherein: the substrate is provided with a single step or a plurality of independent steps, and micro-area heating units are arranged on the steps.
6. A positionally controllable temperature controlled micro-zone heating array as claimed in claim 1, wherein: the micro-area heating array has an independent temperature control driving function and an independent semiconductor micro-nano integrated element driving function at the same time, control loops driven by the temperature control driving and the semiconductor micro-nano integrated element can share one group of loops, and also can be independently provided with two or more groups of control loops, wherein under the condition of sharing one group of loops, the micro-area heating array capable of positioning and controlling the temperature and electrodes of the semiconductor micro-nano integrated element are required to be connected to form a loop.
7. The positionable temperature controlled micro-zone heating array of claim 6, wherein: the temperature control drive and the semiconductor micro-nano integrated element drive share a group of loops and a group of contacts, the heating layer I and the heating layer II are conductive electric heating materials and comprise ITO, AZO and IGZO, and one or more of the micro-area heating array, the program control system and the semiconductor micro-nano integrated element are introduced into a rectifying element.
8. A positionally controllable temperature controlled micro-zone heating array as claimed in claim 7, wherein: one or more introduced rectifying elements in the semiconductor micro-nano integrated elements comprise NPN and PNP structures of the semiconductor micro-nano integrated elements.
9. A positionally controllable temperature controlled micro-zone heating array as claimed in claim 7, wherein: the rectifying element is a Zener diode.
10. The positionable temperature controlled micro-zone heating array of claim 6, wherein: control by temperature change drive and semiconductor receive integrated component drive a little and set up to independent two sets of and above control circuit, a set of contact of sharing, zone of heating I and zone of heating II be electrically conductive electrogenerated heat material, including ITO, AZO, IGZO, zone of heating I, one or two in the zone of heating II, increase an electrode at least, zone of heating I and zone of heating II have solitary control circuit, do not need external semiconductor to receive integrated component a little and carry out the control by temperature change, make the control by temperature change drive of the micro-zone heating array that can fix a position the control by a set of loop control, the integrated component drive is received a little by another group loop control to the semiconductor.
11. The positionable temperature controlled micro-zone heating array of claim 6, wherein: the temperature control drive and the semiconductor micro-nano integrated element drive are set into two or more independent control loops without sharing contacts, the heating layer I and the heating layer II can be conductive electroheating materials or non-conductive electroheating materials, the micro-area heating unit is adjusted to have at least one contact to participate in the temperature control drive, the semiconductor micro-nano integrated element drive is completed by two or more other electrodes, so that the temperature control drive of the micro-area heating array capable of positioning and controlling temperature is controlled by one loop, and the semiconductor micro-nano integrated element drive is controlled by the other loop.
12. A positionally controllable temperature controlled micro-zone heating array as claimed in claim 1, wherein: the micro-area heating array can be driven passively, and a heating layer and a bonding layer can also be arranged on an active driving circuit.
13. The use method of the positionable and temperature-controllable micro-area heating array according to any one of claims 1 to 12 for selectively transferring semiconductor micro-nano integrated elements comprises: a transfer process in which the component at the designated position is moved from one position to another, a removal process in which the component at the designated position is removed from the original position, a welding process in which the component is welded at the designated position, or a repair process in which the component at the designated position is repaired.
14. The use method of the selective transfer semiconductor micro-nano integrated element according to claim 13, characterized in that: the micro-area heating array capable of positioning and controlling temperature can be used in a selective transfer process of single or batch semiconductor micro-nano integrated elements, a program control system is communicated with single or multiple micro-area heating units at specified positions, the micro-area heating units at the specified positions heat a bonding layer, and the bonding layer is melted; the micro-area heating array capable of positioning and controlling temperature is contacted with the semiconductor micro-nano integrated elements on a group of receiving substrates, and the semiconductor micro-nano integrated elements are pressed into the melted bonding layer; the program control system cuts off a connecting passage of the micro-area heating unit, and the bonding layer is solidified; the semiconductor micro-nano integrated element at the appointed position is picked up by the micro-area heating array capable of positioning and controlling temperature, and is contacted with the other group of receiving substrates; the program control system is communicated with the single or a plurality of micro-area heating units at the designated position, the micro-area heating units at the designated position heat the bonding layer, and the bonding layer is melted; the micro-area heating array capable of positioning and controlling temperature is separated from the receiving substrate, and the placing process of the semiconductor micro-nano integrated element is completed.
15. The use method of the selective transfer semiconductor micro-nano integrated element according to claim 13, characterized in that: the micro-area heating array capable of positioning and controlling temperature can be used in a selective welding process of single or batch semiconductor micro-nano integrated elements, the micro-area heating array capable of positioning and controlling temperature is in alignment contact with the semiconductor micro-nano integrated elements, so that electrodes of the semiconductor micro-nano integrated elements are aligned with the bonding layer, and for inverted semiconductor micro-nano integrated elements, a one-time transfer technology can be selected, so that the electrodes of the semiconductor micro-nano integrated elements are exposed outside; the program control system is communicated with the single or a plurality of micro-area heating units at the designated position, the micro-area heating units at the designated position heat the bonding layer, and the bonding layer is melted; the program control system cuts off a connecting passage of the micro-area heating unit, and the bonding layer is solidified; and finishing the welding process of the semiconductor micro-nano integrated element at the designated position.
16. The use method of the selective transfer semiconductor micro-nano integrated element according to claim 13, characterized in that: the micro-area heating array capable of positioning and controlling temperature can be used in a selective removal process of single or batch semiconductor micro-nano integrated elements, the semiconductor micro-nano integrated elements are welded on the micro-area heating array capable of positioning and controlling temperature, a program control system is communicated with single or multiple micro-area heating units at specified positions, the micro-area heating units at the specified positions heat the bonding layer, and the bonding layer is melted; and picking up the semiconductor micro-nano integrated element at the melting position of the bonding layer by using a transfer technology to complete the removal process of the semiconductor micro-nano integrated element, wherein the transfer technology can be a non-selective transfer technology.
17. The use method of the selective transfer semiconductor micro-nano integrated element according to claim 13, characterized in that: the micro-area heating array capable of positioning and controlling temperature can be used in a selective repairing process of single or batch semiconductor micro-nano integrated elements, the semiconductor micro-nano integrated elements are welded on the micro-area heating array capable of positioning and controlling temperature, a program control system is communicated with single or multiple micro-area heating units at specified positions, a driving function of the semiconductor micro-nano integrated elements is started, dead spots are tested, and the positions are determined; removing the semiconductor micro-nano integrated element at the dead point position by utilizing the selective removal process of the micro-area heating array capable of positioning and controlling temperature on the semiconductor micro-nano integrated element; welding a new semiconductor micro-nano integrated element at the position of the removed dead point by utilizing the selective welding process of the micro-area heating array capable of positioning and controlling temperature on the semiconductor micro-nano integrated element; and finishing the selective repair of the semiconductor micro-nano integrated element.
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