CN115346901A - LED wafer sorting method - Google Patents
LED wafer sorting method Download PDFInfo
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- CN115346901A CN115346901A CN202211264649.5A CN202211264649A CN115346901A CN 115346901 A CN115346901 A CN 115346901A CN 202211264649 A CN202211264649 A CN 202211264649A CN 115346901 A CN115346901 A CN 115346901A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides a method for sorting an LED wafer, which comprises the following steps: acquiring WAT sampling data of the LED wafer; scanning coordinates of all crystal grains on the LED wafer and distinguishing inner circle crystal grains and outer circle crystal grains; carrying out distinguishing point measurement on the inner ring crystal grains and the outer ring crystal grains, wherein the inner ring crystal grains are not measured, and the outer ring crystal grains are measured completely; performing AOI appearance detection on the LED wafer subjected to the distinguishing point detection, and marking and damaging appearance defective products in the inner ring crystal grains; calculating all photoelectric mean values of inner ring crystal grains within a preset range of an inner ring of the inner ring to obtain a label value, marking and counting the whole inner ring for shipment; the outer ring crystal grains with normal electrical property and OK appearance are sorted and delivered, and the abnormal outer ring crystal grains are marked and picked out by BIN.
Description
Technical Field
The invention belongs to the technical field of LEDs, and particularly relates to a method for sorting LED wafers.
Background
In the manufacturing process of the LED chip, photoelectric parameters such as wavelength, brightness and voltage of an LED wafer are not uniformly distributed, the output span of the whole wafer is large, the current mainstream method is that all crystal grains are measured completely, then the grade is transferred according to all photoelectric data, then the crystal grains are sorted on different wafers by using a sorting machine according to the grade of each crystal grain, the crystal grains with the same grade are on the same square wafer, and customers select different grades of square wafers for use according to different application requirements.
However, the existing mode of delivering goods in a full-measuring and sorting square sheet mode has the defects that the required spot measuring machine and sorting machine have high capacity, the bottleneck of spot measuring and sorting capacity can not be broken through especially for products with smaller sizes, and the spot measuring and sorting operation time is also prolonged.
Disclosure of Invention
In order to solve the technical problems, the invention provides a method for sorting an LED wafer, which is used for solving the technical problems that the required capacity of a point measuring machine and a sorting machine is high in a mode of delivering goods in a full measuring and sorting square sheet mode in the prior art, the bottleneck of the point measuring and sorting capacity cannot be broken through especially aiming at products with smaller sizes, and the time of the point measuring and sorting operation is increased.
The invention provides the following technical scheme, and the LED wafer sorting method is characterized by comprising the following steps:
step one, performing WAT sampling test on all crystal grains on an LED wafer to obtain WAT sampling test data of the LED wafer;
step two, distinguishing inner and outer rings of all crystal grains on the LED wafer according to the maximum bearing radius R of a client operation machine table to form inner ring crystal grains and outer ring crystal grains;
step three, carrying out distinguishing point measurement on the inner ring crystal grains and the outer ring crystal grains, carrying out full measurement on the outer ring crystal grains, outputting an optoelectronic document without measuring the inner ring crystal grains, wherein the optoelectronic document comprises coordinates of the inner ring crystal grains and the outer ring crystal grains and optoelectronic data of the outer ring crystal grains;
performing AOI appearance detection on the outer ring crystal grains and the inner ring crystal grains subjected to the differential point detection, outputting appearance detection data, shifting the output appearance detection data and the photoelectric document, marking appearance defective products in the inner ring crystal grains according to the appearance detection data, and destroying the appearance defective products in the inner ring crystal grains;
fifthly, selecting inner ring crystal grains within a preset range of an inner ring according to the WAT sampling data and the inner ring distribution area of the LED wafer, calculating all photoelectric mean values of the inner ring crystal grains to obtain a label value, marking and counting according to the label value, and discharging the whole inner ring;
and sixthly, performing secondary gear shifting on the appearance detection data and the photoelectric document, and distinguishing and sorting out the outer ring crystal grains according to the appearance detection data and the photoelectric document.
Compared with the prior art, the beneficial effects of the application are that: the method adopts the inner ring unmeasured mode and the outer ring full-measured mode, the time required by the spot measurement machine for measuring the crystal grains can be greatly reduced, the appearance defective products in the inner ring crystal grains are damaged by adopting the laser INK mode, the step of picking out the appearance defective products in the inner ring crystal grains again is omitted, the sorting operation time is greatly reduced while the productivity is saved, the loss of consumables and materials is reduced, the WAT is utilized for measuring data and setting an inner ring preset range, the WAT measuring data in the inner ring preset range can be used for replacing the step of measuring the inner ring crystal grains by calculating, the productivity is further saved, and meanwhile, the cost and the manual operation step are also saved.
Preferably, the second step includes:
scanning coordinates of all crystal grains on the LED wafer
And calculating the distance between the LED wafer and the center of the circle
Wherein m is the length of the crystal grain, and n is the width of the crystal grain;
judgment of L 2 Work with customerSquare R of maximum bearing radius of machine table 2 Of size, if L 2 ＜R 2 Indicating that the crystal grain is in the inner circle and marking the crystal grain as the inner circle crystal grain, if L 2 ≥R 2 It indicates that this die is outside the circle and marks the die as outside the circle.
Preferably, after the second step, the sorting method further includes:
marking the flat edge of the inner ring, and taking the minimum value of the abscissa of the crystal grain of the inner ring
Less than 0, the minimum value of the abscissa of the crystal grains of the inner ring
The internal contraction A is more than 0 to obtain a flat edge value
+ A, if there is inner ring crystal grain abscissa
＜
+ A, the inner ring crystal grain is determined as the outer ring crystal grain.
Preferably, in the fourth step, the step of performing AOI appearance detection on the outer ring crystal grains and the inner ring crystal grains after the differential point measurement and outputting appearance detection data includes:
the method comprises the steps of taking images of the surface appearances of the outer ring crystal grains and the inner ring crystal grains by matching light sources with different colors with a CCD camera, comparing and analyzing the images with a preset standard normal image, judging whether an appearance defective product exists or not by comparing image gray-scale values, judging that the appearance defective product exists if the deviation between the image gray-scale values and the standard gray-scale values exceeds a preset range, and outputting appearance detection data.
Preferably, in the fourth step, the step of marking the appearance defective product in the inner ring crystal grain according to the appearance detection data and destroying the appearance defective product in the inner ring crystal grain specifically includes:
and positioning coordinates of the appearance defective products in the inner ring crystal grains according to the coordinates of the inner ring crystal grains and the appearance detection data, marking the appearance defective products in the inner ring crystal grains as a first grade by BIN marking, and performing laser destruction operation on the appearance defective products in the inner ring crystal grains according to a first preset shape by using a laser machine to destroy the appearance defective products in the inner ring crystal grains.
Preferably, in the fourth step, the first predetermined shape is L-shaped, cross-shaped, or m-shaped.
Preferably, in the fifth step, the preset range of the inner ring is rectangular, four corner coordinates of an inscribed rectangle in the range of the inner ring are calculated according to the WAT sampling data and the distribution area of the inner ring of the LED wafer, the WAT sampling data is captured again according to the preset range of the inner ring determined by the four corner coordinates, the WAT sampling data corresponding to the preset range of the inner ring is screened for recalculation, each photoelectric mean value is calculated to obtain a label value, marking counting is performed according to the label value, and the whole inner ring is shipped.
Preferably, in the fifth step, the inner ring preset range is circular, the coordinates of the edge position of the inner ring are calculated according to the WAT sampling data and the distribution area of the inner ring of the LED wafer, the inner ring preset range is determined according to the coordinates of the edge position of the inner ring, the WAT sampling data which is not within the inner ring preset range is removed to obtain the WAT sampling data distributed within the inner ring preset range, each photoelectric mean value is calculated to obtain a label value, the marking count is performed according to the label value, and the whole inner ring is shipped.
Preferably, in the fifth step, the label value includes a maximum value, a minimum value, a mean value, a standard deviation of the voltage, the wavelength and the brightness of the inner ring crystal grain, and the number of particles N = N of the inner ring crystal grain 1 -N 2 ；
Wherein N is 1 For the total number of said inner ring grains, N 2 The number of defective appearance products in the inner ring crystal grains damaged by INK.
Preferably, in the sixth step, the step of distinguishing the outer ring crystal grains according to the appearance detection data and the photoelectric document and sorting out the shipment includes:
and distinguishing the outer ring crystal grains with good normal electrical property and appearance from the abnormal outer ring crystal grains according to the appearance detection data and the photoelectric document, distinguishing the outer ring crystal grains with good normal electrical property and appearance according to the range of a photoelectric BIN table and sorting and delivering the outer ring crystal grains according to the grades, marking the abnormal outer ring crystal grains with BIN as a second grade, and picking out the abnormal outer ring crystal grains.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the embodiments or the prior art description will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings may be obtained according to these drawings without inventive labor.
Fig. 1 is a flowchart of an LED wafer sorting method according to an embodiment of the present invention.
The present invention will be described in detail below with reference to the accompanying drawings.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are illustrative and intended to explain the embodiments of the present invention and should not be construed as limiting the invention.
In the description of the embodiments of the present invention, it should be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientations and positional relationships indicated in the drawings only for the convenience of describing the embodiments of the present invention and to simplify the description, and are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the embodiments of the present invention, unless otherwise explicitly specified or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being fixedly connected, detachably connected, or integrated; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or may be connected through the use of two elements or the interaction of two elements. Specific meanings of the above terms in the embodiments of the present invention can be understood by those of ordinary skill in the art according to specific situations.
In one embodiment of the present invention, as shown in fig. 1, a sorting method for LED wafers includes the following steps:
step one, performing WAT sampling test on all crystal grains on an LED wafer to obtain WAT sampling test data of the LED wafer;
the WAT spot test specifically includes performing equidistant spot test on all crystal grains on an LED wafer, for example, selecting a first crystal grain in an X-axis direction, then selecting a crystal grain every ten crystal grains, and so on, selecting a plurality of crystal grains with equal spacing on the LED wafer, performing a photoelectric test on the selected crystal grains, and obtaining coordinates of the crystal grains subjected to WAT spot test, that is, WAT spot test data of the LED wafer includes photoelectric data and coordinates of the spot test crystal grains;
specifically, the LED wafer is fixed through vacuum adsorption of the carrying platform, then the center original point of the LED wafer is found through the CCD, moving point measurement is carried out according to preset equal distance, for example, measurement is carried out at intervals of 10X 10, the scanning process is not needed in the period, and the efficiency is high.
Step two, distinguishing inner and outer rings of all crystal grains on the LED wafer according to the maximum bearing radius R of a client operation machine table to form inner ring crystal grains and outer ring crystal grains;
the second step specifically comprises:
scanning coordinates of all crystal grains on the LED wafer
And calculating the distance between the LED wafer and the center of the LED wafer
Wherein m is the length of the crystal grain, and n is the width of the crystal grain;
judgment of L 2 And the square R of the maximum bearing radius of the client operation machine 2 If L is the size of 2 ＜R 2 Then it indicates that the grain is in the inner circle and marks the grain as the inner circle grain, if L 2 ≥R 2 Indicating that the crystal grain is positioned at the outer ring and marking the crystal grain as the outer ring crystal grain;
when the LED wafer is sorted, the machine station scans the coordinates of all crystal grains on the LED wafer after the LED wafer is loaded, wherein the coordinates are the coordinates of all crystal grains on the LED wafer
The coordinates represent the number of the grains from the origin and not the distance between the grains and the center of the circle, for example, the coordinates of a certain grain is (3, 4), that is, the coordinates represent that the grain is the third column of grains in the positive direction of the X axis and the fourth column of grains in the positive direction of the Y axis, and the grains are precisely arranged on the wafer, so that the grains are precisely arranged on the wafer
The abscissa of the grain is represented as the number of grains of the grain on the X axis multiplied by the length of the grain,
the method comprises the steps of representing the ordinate of the crystal grain, namely multiplying the number of the crystal grain on a Y axis by the width of the crystal grain, wherein the circle center of a coordinate basis of the ordinate is the central position of an LED wafer, and because a common LED wafer can be seen as a standard circle, the original point of a coordinate system established on a machine table is the central position of the LED wafer, so that the distance L between each crystal grain and the circle center can be calculated according to the pythagorean theorem and the horizontal and vertical coordinates of the crystal grain;
it can be understood that the boundary between the inner ring and the outer ring in the present application is a boundary circle drawn by using the center of the LED wafer as the center of a circle and the maximum bearing radius R of the customer operation machine as the radius, and by combining the distance between each crystal grain and the LED wafer, all crystal grains on the LED wafer can be divided into the inner ring crystal grain and the outer ring crystal grain according to the position of the crystal grain, when L is equal to L 2 ＜R 2 Then it means that the crystal grain is in the inner ring and the crystal grain is marked as the inner ring crystal grain, i.e. the crystal grain is outside the boundary circle, i.e. the outer ring crystal grain, when L is 2 ≥R 2 The crystal grain is positioned on the outer ring and is marked as the crystal grain on the outer ring, namely the crystal grain is positioned in the boundary circle, namely the crystal grain on the inner ring;
it should be noted that if the die falls on the boundary circle, the die is also divided into inner ring dies;
further, in this embodiment, after the second step, the sorting method further includes:
marking the flat edge of the inner ring, and taking the minimum value of the abscissa of the crystal grain of the inner ring
< 0, minimizing the abscissa of the inner ring crystal grainValue of
The internal contraction A is more than 0 to obtain a flat edge value
+ A, if there is inner ring crystal grain abscissa
＜
+ A, judging the inner ring crystal grain as an outer ring crystal grain;
the inner ring processed in the second step is a standard circle, and when the inner ring is used by a customer, the arrangement direction of the chips is convenient to identify, so that a flat edge is introduced into the inner ring to enable the inner ring to be a circle with a plane;
in particular, the minimum value of the abscissa of the inner circle grain
I.e. the position of the intersection of the inner circle boundary and the negative direction of the X axis, thus
A negative value is less than 0, and the minimum value of the abscissa of the crystal grains of the inner ring is calculated
Retracting in the direction of X axis, namely moving the intersection point position of the inner ring boundary and the X axis negative direction to the X axis positive direction by A, and drawing a strip of X =
+ A, the straight line is parallel to the Y axis, the intersection point of the straight line and the inner circle boundary is a flat edge, if there is an inner circle crystal grain abscissa
＜
And + A, the inner ring crystal grains are positioned between the flat edges and the intersection point position of the inner ring boundary and the negative direction of the X axis, and the inner ring crystal grains are judged as outer ring crystal grains because the inner ring crystal grains are removed, so that the arrangement direction of the chips is distinguished.
Step three, carrying out distinguishing point measurement on the inner ring crystal grains and the outer ring crystal grains, carrying out full measurement on the outer ring crystal grains, outputting an optoelectronic document without measuring the inner ring crystal grains, wherein the optoelectronic document comprises coordinates of the inner ring crystal grains and the outer ring crystal grains and optoelectronic data of the outer ring crystal grains;
the method comprises the steps of point measurement and required time saving by adopting a mode of no measurement of inner ring crystal grains and full measurement of outer ring crystal grains, and simultaneously outputting a complete photoelectric document of the outer ring crystal grains after the full measurement of the outer ring crystal grains, wherein the document comprises the coordinate positions of the outer ring crystal grains, namely X coordinates and Y coordinates, and photoelectric data, such as voltage, wavelength, brightness and the like, while the inner ring crystal grains are not measured and only output the coordinate values of the inner ring crystal grains, and the photoelectric output of the inner ring crystal grains is null, namely the data about the voltage, wavelength, brightness and the like of the inner ring crystal grains can not be output, namely the coordinate values of the inner ring crystal grains and the outer ring crystal grains can be obtained and the complete photoelectric data of the outer ring crystal grains can be tested in the process of distinguishing and point measuring the inner ring crystal grains and the outer ring crystal grains;
by using the mode of not measuring the inner ring and fully measuring the outer ring, the time required by point measurement can be greatly reduced, the productivity is improved, the traditional mode of carrying out all point measurement on crystal grains on the LED wafer is replaced, and the efficiency of sorting and point measurement of the LED wafer can be improved.
Performing AOI appearance detection on the outer ring crystal grains and the inner ring crystal grains after the point detection is distinguished, outputting appearance detection data, performing gear shifting on the output appearance detection data and the photoelectric document, and marking appearance defective products in the inner ring crystal grains according to the appearance detection data and destroying the appearance defective products in the inner ring crystal grains;
the step of marking the appearance defective product in the inner ring crystal grain according to the appearance detection data and destroying the appearance defective product in the inner ring crystal grain specifically includes:
according to the coordinates of the inner ring crystal grains and the appearance detection data, the coordinates of the appearance defective products in the inner ring crystal grains are located, BIN marks are carried out on the appearance defective products in the inner ring crystal grains, the appearance defective products are marked as a first grade, and laser destruction operation is carried out on the appearance defective products in the inner ring crystal grains according to a first preset shape through a laser machine to destroy the appearance defective products in the inner ring crystal grains;
the machine station performs AOI appearance detection on inner ring crystal grains and outer ring crystal grains on the LED wafer by using AOI appearance detection, and then combines the AOI appearance detection result with the photoelectric document output in the third step in order to detect appearance defective products in the inner ring crystal grains and the outer ring crystal grains, wherein the table specifically comprises the following tables:
in the table, 0 represents that the crystal grain is positioned at the outer ring, 1 represents that the crystal grain is positioned at the inner ring, wherein the BIN value mark is used for marking the grade of each crystal grain, the BIN values of the crystal grains at the inner ring are the same, the photoelectric distribution convergence of the crystal grains at the inner ring is good, the crystal grains can be directly used as a whole block to meet the customer requirements without distinguishing the crystal grains, and the BIN values of the crystal grains at the outer ring are different;
it can be understood that after AOI appearance detection is carried out, appearance defective products of crystal grains of an inner ring can be detected, the appearance defective products of the crystal grains of the inner ring need to be removed, therefore, after the AOI appearance detection is carried out, BIN marking is carried out on the appearance defective products of the crystal grains of the inner ring, the BIN value is 160BIN, namely the first grade, at the moment, a laser machine can carry out INK operation on the crystal grains of the inner ring according to coordinates of the appearance defective products of the crystal grains of the inner ring, namely, the appearance defective products of the crystal grains of the inner ring are damaged in a laser mode, the step of sorting the appearance defective products of the crystal grains of the inner ring is omitted, the appearance defective products of the damaged crystal grains of the inner ring can be observed through naked eyes, the crystal grains can be conveniently used by customers, therefore, the appearance defective products of the crystal grains of the inner ring are damaged in a laser mode, the step of sorting of the inner ring can be omitted, meanwhile, in the traditional sorting process, the appearance defective products need not to be sorted and placed on a blue film, namely, the crystal grains carry materials, and the sorting process is omitted while the productivity is saved;
further, the first preset shape is L-shaped, cross-shaped or m-shaped;
the crystal grains are generally rectangular, so when INK operation is performed on the appearance defective products of the inner ring crystal grains, the damaged appearance defective products of the inner ring crystal grains are obviously distinguished from the normal crystal grains, the first preset shape is L-shaped, cross-shaped or m-shaped, the positions of the damaged appearance defective products of the inner ring crystal grains can be observed through naked eyes, and simultaneously, after the appearance defective products of the inner ring crystal grains are damaged by laser, scorching traces are left on the appearance defective products of the inner ring crystal grains, so that customers can conveniently identify the specific positions of the appearance defective products of the inner ring crystal grains through the naked eyes;
and the step of performing AOI appearance detection on the outer ring crystal grains and the inner ring crystal grains after the differential point measurement and outputting appearance detection data comprises the following steps:
taking images of the surface appearances of the outer ring crystal grains and the inner ring crystal grains by matching light sources with different colors with CCD cameras, then comparing and analyzing the images with a preset standard normal image, judging whether an appearance defective product exists or not by comparing the gray scale value of the images, judging that the appearance defective product exists when the deviation between the gray scale value of the images and the standard gray scale value exceeds a preset range, and outputting appearance detection data;
the AOI appearance detection comprises the steps of taking images of the surface appearance of a product chip by matching light sources (red, blue and white) with different colors with a CCD camera, then carrying out contrast analysis on the images and a preset standard normal image, judging whether the defects exist by comparing image gray-scale values (0-255), judging whether the defects exist, namely, the defects are 0 darkest and 255 brightest, judging whether the deviation between the image gray-scale values and the standard gray-scale values exceeds a certain range to be NG, and giving an appearance poor grade, wherein if the appearance poor grade in crystal grains in an inner ring is marked as a first grade;
it is worth to be noted that 3 image capturing modes are required in the AOI detection method, namely front blue light shooting, front red light shooting and back white light shooting, and whether the appearance of the LED wafer is defective or not is judged through 3 different light source expression modes.
Fifthly, selecting inner ring crystal grains within a preset range of an inner ring according to the WAT sampling data and the inner ring distribution area of the LED wafer, calculating all photoelectric mean values of the inner ring crystal grains to obtain a label value, marking and counting according to the label value, and discharging the whole inner ring;
the WAT sampling data is obtained through the first step, the output comprises coordinates of sampling crystal grains and photoelectric data, therefore, in the fifth step, only an inner ring preset range needs to be marked out of the inner ring, the inner ring crystal grains which are positioned in the inner ring preset range and are sampled and measured are selected, the sampling data is combined, the photoelectric data of the inner ring crystal grains can be obtained, then, the photoelectric mean value of each item is calculated to obtain a label value, marking counting is carried out according to the label value, and the whole inner ring is delivered, wherein the label value is shown in the following table:
the maximum value, the minimum value, the average value and the standard deviation of the voltage, the maximum value, the minimum value, the average value and the standard deviation of the main wavelength, the maximum value, the minimum value, the average value and the standard deviation of the peak wavelength, and the maximum value, the minimum value, the average value and the standard deviation of the brightness are respectively shown in the table;
in the step, point measurement of the crystal grains of the inner ring is not needed, only one area is needed to be divided, the area is enough to represent the photoelectric numerical values of all the crystal grains of the inner ring, and then the positions of the WAT measured crystal grains in the preset range of the inner ring and the photoelectric data of the WAT measured crystal grains are found out, so that the photoelectric data of the crystal grains in the whole range of the inner ring can be obtained, the capacity can be further saved, and the sorting efficiency is improved;
in this embodiment, the inner ring preset range is rectangular, four corner coordinates of an inscribed rectangle in the inner ring range are calculated according to WAT sampling data of the LED wafer and the distribution area of the inner ring of the LED wafer, the WAT sampling data is captured again according to the inner ring preset range determined by the four corner coordinates and the WAT sampling data corresponding to the inner ring preset range is screened for recalculation, each photoelectric mean value is calculated to obtain a label value, marking counting is performed according to the label value, and the whole inner ring is shipped;
the method comprises the steps that four corner point coordinates of an inscribed rectangle in an inner circle range are determined, a rectangular area can be selected in the inner circle range, then, crystal grains on an LED wafer are sampled and measured at equal intervals in the process of WAT sampling and measurement according to WAT sampling and measurement data, therefore, the coordinates and photoelectric data of the WAT sampling and measurement crystal grains in the rectangular area only need to be determined, then, all photoelectric mean values are calculated to obtain label values, and then, the labels are marked, counted and delivered;
the method can be understood that the sampling test crystal grains in the preset range of the inner ring are selected without detecting all the crystal grains of the inner ring, so that the time required by sorting and point testing can be greatly reduced, and the productivity can be saved;
in this embodiment, the inner ring preset range may also be circular, the coordinates of the edge position of the inner ring are calculated according to the WAT sampling data of the LED wafer and the distribution area of the inner ring of the LED wafer, the WAT sampling data that is not within the inner ring preset range is removed according to the inner ring preset range determined by the coordinates of the edge position of the inner ring, so as to obtain the WAT sampling data distributed within the inner ring preset range, each photoelectric mean value is calculated to obtain a label value, the marking count is performed according to the label value, and the whole inner ring is shipped;
the inner circle preset range is matched with the inner circle range, so that the coordinates of WAT sampling crystal grains and photoelectric data within the inner circle range only need to be determined, and because the inner circle preset range is matched with the inner circle, the number of the crystal grains included in the inner circle preset range of the selected circular area is larger than that of the crystal grains included in the inner circle preset range of the selected inscribed rectangular area, and meanwhile, the edge omission phenomenon does not occur, so that the data accuracy is better.
Step six, performing secondary file transfer on the appearance detection data and the photoelectric document, and distinguishing and sorting out the outer ring crystal grains according to the appearance detection data and the photoelectric document;
the step of distinguishing the outer ring crystal grains according to the appearance detection data and the photoelectric document and sorting out the outer ring crystal grains comprises the following steps:
distinguishing outer ring crystal grains with good normal electrical property and appearance from abnormal outer ring crystal grains according to the appearance detection data and the photoelectric document, distinguishing the outer ring crystal grains with good normal electrical property and appearance according to the range of a photoelectric BIN table and sorting and delivering the outer ring crystal grains according to the grades, marking the abnormal outer ring crystal grains with BIN as a second grade, and picking out the abnormal outer ring crystal grains;
performing secondary gear matching on coordinates and photoelectric data which represent outer ring crystal grains in the document output after the four-AOI appearance detection, performing grade distinguishing according to specific BIN values and photoelectric BIN table ranges, sorting the outer ring crystal grains of the same grade and placing the outer ring crystal grains on the same blue film, marking abnormal outer ring crystal grains as a second grade, wherein the outer ring crystal grains cannot be used, and sorting the outer ring crystal grains to avoid the outer ring crystal grains from remaining on the blue film when the inner ring crystal grains are shipped because the outer ring crystal grains need to be sorted out;
meanwhile, an intelligent picking and collecting system is carried on a machine table required for sorting, a plurality of wafers with similar photoelectric properties can be selected to be collected through the system, the yield of the same grade is increased, and the situation that the full BIN number of the wafers cannot be reached due to the fact that the number of single-grade particles is not enough is avoided;
in this embodiment, the label value includes a maximum value, a minimum value, a mean value, a standard deviation of the voltage, the wavelength and the brightness of the inner ring crystal grain, and the number of particles N = N of the inner ring crystal grain 1 -N 2 ；
Wherein, N 1 The total number of the inner ring grains, N 2 The number of appearance defective products in the inner ring crystal grains damaged by the INK;
the wavelength comprises a main wavelength and a peak wavelength, and the corresponding label value also comprises the maximum value, the minimum value, the average value and the standard deviation of the main wavelength and the peak wavelength of the inner ring crystal grain;
meanwhile, in order to ensure the accuracy of the tag value, the photoelectric data needs to be subjected to dead pixel extraction, that is, a photoelectric range is manually preset, for example, the voltage range is 2-3.5V, all data of which the voltage photoelectric data is not in the preset photoelectric range are marked as dead pixels and removed, and then the tag parameters such as the maximum value, the minimum value, the mean value, the standard deviation and the like are continuously obtained from the rest data.
In summary, in the method for sorting the LED wafer according to the above embodiment of the present invention, the inner ring is not tested, and the outer ring is tested completely, so that the time required by the spot tester for performing the spot testing on the dies can be greatly reduced, meanwhile, the laser INK is used to destroy the defective appearance in the inner ring dies, thereby eliminating the step of picking out the defective appearance in the inner ring dies again, saving the productivity, greatly reducing the time for sorting operation, and reducing the loss of consumables and materials.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The LED wafer sorting method is characterized by comprising the following steps:
step one, performing WAT sampling test on all crystal grains on an LED wafer to obtain WAT sampling test data of the LED wafer;
step two, distinguishing inner and outer rings of all crystal grains on the LED wafer according to the maximum bearing radius R of a client operation machine table to form inner ring crystal grains and outer ring crystal grains;
step three, carrying out distinguishing point measurement on the inner ring crystal grains and the outer ring crystal grains, carrying out full measurement on the outer ring crystal grains, outputting an optoelectronic document without measuring the inner ring crystal grains, wherein the optoelectronic document comprises coordinates of the inner ring crystal grains and the outer ring crystal grains and optoelectronic data of the outer ring crystal grains;
performing AOI appearance detection on the outer ring crystal grains and the inner ring crystal grains after the point detection is distinguished, outputting appearance detection data, performing gear shifting on the output appearance detection data and the photoelectric document, and marking appearance defective products in the inner ring crystal grains according to the appearance detection data and destroying the appearance defective products in the inner ring crystal grains;
fifthly, selecting inner ring crystal grains within a preset range of an inner ring according to the WAT sampling data and the inner ring distribution area of the LED wafer, calculating all photoelectric mean values of the inner ring crystal grains to obtain a label value, marking and counting according to the label value, and discharging the whole inner ring;
and sixthly, performing secondary gear shifting on the appearance detection data and the photoelectric document, and distinguishing and sorting out the outer ring crystal grains according to the appearance detection data and the photoelectric document.
2. The LED wafer sorting method of claim 1, wherein the second step comprises:
scanning coordinates of all crystal grains on the LED wafer
And calculating the distance between the LED wafer and the center of the LED wafer
Wherein m is the length of the crystal grain, and n is the width of the crystal grain;
judgment of L 2 The square R of the maximum bearing radius of the customer operation machine 2 If L is the size of 2 ＜R 2 Indicating that the crystal grain is in the inner circle and marking the crystal grain as the inner circle crystal grain, if L 2 ≥R 2 Then indicate the dieAt the outer circle and mark the grain as the outer circle grain.
3. The LED wafer sorting method of claim 2, wherein after the second step, the sorting method further comprises:
marking the flat edge of the inner ring, and taking the minimum value of the abscissa of the crystal grain of the inner ring
Less than 0, the minimum value of the abscissa of the crystal grain of the inner ring
The internal contraction A is more than 0 to obtain a flat edge value
+ A, if there is inner ring crystal grain abscissa
＜
And + A, judging the inner ring crystal grain as an outer ring crystal grain.
4. The LED wafer sorting method according to claim 1, wherein in the fourth step, the step of performing AOI appearance inspection on the outer ring grains and the inner ring grains after the sorting and spot measurement and outputting appearance inspection data includes:
and taking images of the surface appearances of the outer ring crystal grains and the inner ring crystal grains by matching light sources with different colors with CCD cameras, comparing and analyzing the images with a preset standard normal image, judging whether appearance defective products exist or not by comparing the gray scale value of the images, judging that the appearance defective products exist when the deviation between the gray scale value of the images and the standard gray scale value exceeds a preset range, and outputting appearance detection data.
5. The LED wafer sorting method according to claim 1, wherein in the fourth step, the step of marking the appearance defective products in the inner ring dies according to the appearance inspection data and destroying the appearance defective products in the inner ring dies specifically includes:
and positioning coordinates of the appearance defective products in the inner ring crystal grains according to the coordinates of the inner ring crystal grains and the appearance detection data, marking the appearance defective products in the inner ring crystal grains as a first grade by BIN marking, and performing laser destruction operation on the appearance defective products in the inner ring crystal grains according to a first preset shape by using a laser machine to destroy the appearance defective products in the inner ring crystal grains.
6. The LED wafer sorting method according to claim 5, wherein in the fourth step, the first predetermined shape is L-shaped, cross-shaped or m-shaped.
7. The LED wafer sorting method according to claim 1, wherein in the fifth step, the inner circle preset range is rectangular, four corner coordinates of an inscribed rectangle in the inner circle range are calculated according to the WAT sampling data and the distribution area of the inner circle of the LED wafer, the WAT sampling data is grabbed again according to the inner circle preset range determined by the four corner coordinates, the WAT sampling data corresponding to the inner circle preset range is screened for recalculation, each photoelectric mean value is calculated to obtain a label value, marking counting is performed according to the label value, and the whole inner circle is delivered.
8. The LED wafer sorting method according to claim 1, wherein in the fifth step, the preset range of the inner ring is circular, the coordinates of the edge position of the inner ring are calculated according to the distribution area of the inner ring of the LED wafer according to the WAT sampling data, the preset range of the inner ring is determined according to the coordinates of the edge position of the inner ring, the WAT sampling data which are not in the preset range of the inner ring are removed to obtain the WAT sampling data distributed in the preset range of the inner ring, each photoelectric mean value is calculated to obtain a label value, and marking counting is performed according to the label value and the whole inner ring is shipped.
9. The LED wafer sorting method of claim 1, wherein in the fifth step, the label values comprise maximum values, minimum values, mean values, standard deviations of voltage, wavelength and brightness of the inner ring of dies, and the number of particles N = N of the inner ring of dies 1 -N 2 ；
Wherein N is 1 For the total number of said inner ring grains, N 2 The number of appearance defective products in the inner ring crystal grains damaged by the INK.
10. The LED wafer sorting method as claimed in claim 1, wherein in the sixth step, the step of distinguishing the outer ring of dies according to the appearance detection data and the optoelectronic document and sorting out the out-of-stock includes:
and distinguishing the outer ring crystal grains with good normal electrical property and appearance from the abnormal outer ring crystal grains according to the appearance detection data and the photoelectric document, distinguishing the outer ring crystal grains with good normal electrical property and appearance according to the range of a photoelectric BIN table and sorting and delivering the outer ring crystal grains according to the grades, marking the abnormal outer ring crystal grains with BIN as a second grade, and picking out the abnormal outer ring crystal grains.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116203043A (en) * | 2023-05-05 | 2023-06-02 | 武汉精立电子技术有限公司 | LED chip integrated detection method and device |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01120837A (en) * | 1987-11-04 | 1989-05-12 | Tokyo Electron Ltd | Semiconductor wafer prober |
| KR20040082893A (en) * | 2003-03-20 | 2004-09-30 | 삼성전자주식회사 | An align method of a semiconductor substrate |
| CN101369516A (en) * | 2007-08-17 | 2009-02-18 | 京元电子股份有限公司 | Method for marking wafer, method for marking poor product crystal grain, method for wafer contraposition, and wafer test machine |
| CN101452027A (en) * | 2007-11-30 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Wafer shipment quality guarantee detecting method |
| CN103646900A (en) * | 2013-12-03 | 2014-03-19 | 西安神光皓瑞光电科技有限公司 | Test method and test system for LED wafer |
| US20150279786A1 (en) * | 2014-04-01 | 2015-10-01 | Seiko Instruments Inc. | Semiconductor wafer |
| CN105785254A (en) * | 2016-03-10 | 2016-07-20 | 厦门市三安光电科技有限公司 | Wafer testing device and testing method thereof |
| CN105914161A (en) * | 2016-05-05 | 2016-08-31 | 扬州乾照光电有限公司 | Wafer partition testing method of LED chip |
| CN106312322A (en) * | 2016-09-05 | 2017-01-11 | 大族激光科技产业集团股份有限公司 | Bad core particle marking device and method |
| CN110038822A (en) * | 2019-04-20 | 2019-07-23 | 东莞中科蓝海智能视觉科技有限公司 | The visible detection method of reflective annulus part |
| KR20190091758A (en) * | 2018-01-29 | 2019-08-07 | 에스케이하이닉스 주식회사 | Test Apparatus and Method of Testing Wafer Using The Same |
| CN110581096A (en) * | 2019-09-27 | 2019-12-17 | 江西兆驰半导体有限公司 | Photoelectric property and appearance integrated detection equipment for LED chip |
| CN111048435A (en) * | 2019-12-25 | 2020-04-21 | 上海华力微电子有限公司 | Defect monitoring method |
| CN112775030A (en) * | 2020-12-02 | 2021-05-11 | 华灿光电(苏州）有限公司 | Light emitting diode chip sorting method |
| CN115020286A (en) * | 2022-05-31 | 2022-09-06 | 江西兆驰半导体有限公司 | Method and system for sorting and picking crystal grains |
-
2022
- 2022-10-17 CN CN202211264649.5A patent/CN115346901B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01120837A (en) * | 1987-11-04 | 1989-05-12 | Tokyo Electron Ltd | Semiconductor wafer prober |
| KR20040082893A (en) * | 2003-03-20 | 2004-09-30 | 삼성전자주식회사 | An align method of a semiconductor substrate |
| CN101369516A (en) * | 2007-08-17 | 2009-02-18 | 京元电子股份有限公司 | Method for marking wafer, method for marking poor product crystal grain, method for wafer contraposition, and wafer test machine |
| CN101452027A (en) * | 2007-11-30 | 2009-06-10 | 中芯国际集成电路制造(上海)有限公司 | Wafer shipment quality guarantee detecting method |
| CN103646900A (en) * | 2013-12-03 | 2014-03-19 | 西安神光皓瑞光电科技有限公司 | Test method and test system for LED wafer |
| US20150279786A1 (en) * | 2014-04-01 | 2015-10-01 | Seiko Instruments Inc. | Semiconductor wafer |
| CN105785254A (en) * | 2016-03-10 | 2016-07-20 | 厦门市三安光电科技有限公司 | Wafer testing device and testing method thereof |
| CN105914161A (en) * | 2016-05-05 | 2016-08-31 | 扬州乾照光电有限公司 | Wafer partition testing method of LED chip |
| CN106312322A (en) * | 2016-09-05 | 2017-01-11 | 大族激光科技产业集团股份有限公司 | Bad core particle marking device and method |
| KR20190091758A (en) * | 2018-01-29 | 2019-08-07 | 에스케이하이닉스 주식회사 | Test Apparatus and Method of Testing Wafer Using The Same |
| CN110038822A (en) * | 2019-04-20 | 2019-07-23 | 东莞中科蓝海智能视觉科技有限公司 | The visible detection method of reflective annulus part |
| CN110581096A (en) * | 2019-09-27 | 2019-12-17 | 江西兆驰半导体有限公司 | Photoelectric property and appearance integrated detection equipment for LED chip |
| CN111048435A (en) * | 2019-12-25 | 2020-04-21 | 上海华力微电子有限公司 | Defect monitoring method |
| CN112775030A (en) * | 2020-12-02 | 2021-05-11 | 华灿光电(苏州）有限公司 | Light emitting diode chip sorting method |
| CN115020286A (en) * | 2022-05-31 | 2022-09-06 | 江西兆驰半导体有限公司 | Method and system for sorting and picking crystal grains |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116203043A (en) * | 2023-05-05 | 2023-06-02 | 武汉精立电子技术有限公司 | LED chip integrated detection method and device |
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