CN115323354A - 一种粉体材料声共振–气相沉积装置及实现方法 - Google Patents
一种粉体材料声共振–气相沉积装置及实现方法 Download PDFInfo
- Publication number
- CN115323354A CN115323354A CN202210831285.8A CN202210831285A CN115323354A CN 115323354 A CN115323354 A CN 115323354A CN 202210831285 A CN202210831285 A CN 202210831285A CN 115323354 A CN115323354 A CN 115323354A
- Authority
- CN
- China
- Prior art keywords
- vapor deposition
- powder material
- acoustic resonance
- reaction vessel
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 110
- 239000000843 powder Substances 0.000 title claims abstract description 92
- 239000000463 material Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 40
- 239000007787 solid Substances 0.000 claims abstract description 13
- 238000005096 rolling process Methods 0.000 claims abstract description 7
- 238000005019 vapor deposition process Methods 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 238000011084 recovery Methods 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 5
- 238000005054 agglomeration Methods 0.000 abstract description 3
- 230000002776 aggregation Effects 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 51
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 8
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明公开了一种粉体材料声共振–气相沉积装置及实现方法,包括气相沉积反应容器、声共振设备和固定装置;气相沉积反应容器能同时作为粉体材料的容器和气相沉积反应器,气相沉积反应容器通过固定装置设在声共振设备上,声共振设备能使气相沉积反应容器内的粉体材料处于振动翻滚状态。本发明将声共振与气相沉积相结合,不仅可通过声共振解除粉体团聚实现粉体材料的分散,同时可增强粉体材料与气相沉积源蒸汽的气‑固传质强化,最终实现粉体材料表面气相沉积材料的均匀包覆。
Description
技术领域
本发明属于装置开发领域,具体涉及一种粉体材料声共振–气相沉积装置及实现方法。
背景技术
相比于平面样品,超高的比表面积赋予粉体材料具备更为丰富的物理与化学性能,可广泛应用于工业催化、航空航天、新能源、微电子等领域。然而,各类粉体材料在实际应用过程中,因各类原因导致其无法发挥应有的性能,其原因主要包括以下两个方面:其一,粉体材料高表面能易导致粉体材料发生团聚,使其应有的理化性能无法充分发挥;其二,高比表面积的粉体材料表面易发生变质,即易与周围环境的水氧气氛发生反应,导致各类粉体材料表面活性降低。粉体材料表面改性,即通过物理、化学方法在粉体材料表面包覆改性层,如阻隔层、功能层等,实现粉体材料物理与化学性能的优化。
粉体材料气相沉积改性是利用一种或多种气态或蒸汽态的前驱体物质,在特定的反应条件下,在粉体材料表面沉积相应的改性层,实现对粉体材料的表面改性,常见的气相沉积过程包括原子层沉积(ALD)与化学气相沉积(CVD)。
然而,相比于平面材料,高比表面的粉体材料因比表面积大、易团聚、气相沉积过程气-固传质阻力大等原因,导致粉体材料表面改性层三维均匀性、厚度可控性、可重复性以及性能稳定性较差,极大的限制了气相沉积改性粉体材料在各领域的应用。
发明内容
针对现有技术中存在的不足,本发明的目的在于,提供一种粉体材料声共振–气相沉积装置及实现方法,将声共振与气相沉积相结合,不仅可通过声共振解除粉体团聚实现粉体材料的分散,同时可增强粉体材料与气相沉积源蒸汽的气-固传质强化,使得粉体材料表面气相沉积改性层具有更高的三维均匀性、厚度可控性以及可重复性。
为了解决上述技术问题,本发明采用如下技术方案予以实现:
一种粉体材料声共振–气相沉积装置,包括气相沉积反应容器、声共振设备和固定装置;
所述气相沉积反应容器能同时作为粉体材料的容器和气相沉积反应器,该气相沉积反应容器包括容器本体、气相沉积源气体分布器、密封盖在容器本体顶部开口上的上盖板、进气管、出气管和热电偶;所述气相沉积源气体分布器置于容器本体内,所述进气管贯穿上盖板,且进气管一端伸入容器本体内并与气相沉积源气体分布器相连,进气管另一端连接容器本体外部的气相沉积源,进气管路能将气相沉积源蒸汽注入到气相沉积源气体分布器,气相沉积源气体分布器上表面及侧面开孔以使气相沉积源蒸汽均匀分布在容器本体内;所述热电偶贯穿上盖板伸至容器本体内;所述出气管贯穿上盖板以连通至容器本体内;
所述气相沉积反应容器通过固定装置设在声共振设备上,声共振设备能使气相沉积反应容器内的粉体材料处于振动翻滚状态。
本发明还包括如下技术特征:
具体的,所述固定装置包括底座、支架、螺杆和压盘;底座设在声共振设备上表面,支架包括横板和支撑在横板下的竖杆,竖杆设在底座上,螺杆垂直贯穿横板,压盘固定在螺杆下端;气相沉积反应容器位于底座和压盘之间,通过旋转螺杆能调节压盘的高度以通过压盘紧固气相沉积反应容器。
具体的,所述出气管连接真空产生及控制系统,以确保气相沉积所需的真空条件及整体气体流向。
具体的,所述出气管上设有粉体回收器,以回收气相沉积过程中随气流被抽离容器本体的粉体材料。
具体的,所述热电偶为控温及测温热电偶。
具体的,所述气相沉积源为固态源、液态源或气态源;固态源、液态源和气态源以蒸汽的形式注入到容器本体内。
一种所述的粉体材料声共振–气相沉积装置的实现方法,包括以下步骤:
所述的容器本体内加装粉体材料并通过固定装置将气相沉积反应容器固定于声共振设备上,当气相沉积源、进气管、气相沉积反应容器、出气管达到预设的温度时,设置声共振设备振动频率使容器本体内粉体材料处于振动翻滚状态,开启气相沉积过程,待气相沉积过程结束后关闭声共振设备,取下气相沉积反应容器并取出粉体材料,完成粉体材料气相沉积。
具体的,所述气相沉积包括化学气相沉积和原子层沉积。
本发明与现有技术相比,具有如下技术效果:
1、本发明提供了一种粉体材料声共振–气相沉积装置及实现方法,该方法将声共振引入到气相沉积过程,调整声共振设备振动加速度(频率)促使粉体材料解团聚而实现粉体材料的充分分散,有效解决粉体材料易团聚的问题;声共振-气相沉积过程中粉体材料不断翻滚,可有效增强气相沉积过程中粉体材料与气相沉积源蒸汽的气-固传质作用,有效解决粉体材料气相沉积过程中的气-固传质阻力较大的问题,最终实现粉体材料气相沉积改性层的均匀包覆,粉体材料气相沉积改性层的三维均匀性、厚度可控性及可重复性极佳。
2、本发明涉及的装置可根据待处理粉体材料的体积进行相应的调整,可实现实验室小样制备、中试以及工业放大生产。
3、本发明相比于传统粉体材料气相沉积表面改性,该发明即可实现粉体材料表面改性层的均匀沉积,同时可充分利用气相沉积源,减少资源浪费,减少环境污染。
附图说明
图1是本发明整体结构示意图。
图2是本发明气相沉积反应容器示意图。
图3是本发明上盖板示意图。
图中各个标号的含义为:
1.气相沉积反应容器,2.声共振设备,3.固定装置,101.容器本体,102.气相沉积源气体分布器,103.上盖板,104.进气管,105.出气管,106.热电偶,107.粉体回收器,301.底座,302.支架,303.螺杆,304.压盘。
具体实施方式
以下给出本发明的具体实施例,需要说明的是本发明并不局限于以下具体实施例,凡在本申请技术方案基础上做的等同变换均落入本发明的保护范围。
实施例1:
如图1至图3所示,本实施例提供一种粉体材料声共振–气相沉积装置,包括气相沉积反应容器1、声共振设备2和固定装置3。
气相沉积反应容器1能同时作为粉体材料的容器和气相沉积反应器,该气相沉积反应容器1包括容器本体101、气相沉积源气体分布器102、密封盖在容器本体101顶部开口上的上盖板103、进气管104、出气管105和热电偶106;气相沉积源气体分布器102置于容器本体101内,进气管104贯穿上盖板103,且进气管104一端伸入容器本体101内并与气相沉积源气体分布器102相连,进气管104另一端连接容器本体101外部的气相沉积源,进气管104能将气相沉积源蒸汽注入到气相沉积源气体分布器102,气相沉积源气体分布器102上表面及侧面开孔以使气相沉积源蒸汽均匀分布在容器本体101内;热电偶106贯穿上盖板103伸至容器本体101内;出气管105贯穿上盖板103以连通至容器本体101内;
气相沉积反应容器1通过固定装置3设在声共振设备2上,该声共振设备为现有技术中的常规设备,声共振设备2能使气相沉积反应容器1内的粉体材料处于振动翻滚状态。
固定装置3包括底座301、支架302、螺杆303和压盘304;底座301设在声共振设备2上表面,支架302包括横板和支撑在横板下的竖杆,竖杆设在底座301上,螺杆303垂直贯穿横板,压盘304固定在螺杆303下端;气相沉积反应容器1位于底座301和压盘304之间,通过旋转螺杆303能调节压盘304的高度以通过压盘304紧固气相沉积反应容器1。
本实施例中的上盖板包括上法兰盘和下法兰盘,上法兰盘和下法兰盘通过铜质密封圈和螺栓进行密封。
出气管105连接真空产生及控制系统,以确保气相沉积所需的真空条件及整体气体流向。可根据具体气相沉积过程加装不同调节能力的阀门及不同抽滤的真空泵,对容器本体内真空度的抽率及最终容器本体内的真空度进行调整。
出气管105上设有粉体回收器107,以回收气相沉积过程中随气流被抽离容器本体的粉体材料。
粉体回收器可根据粉体材料粒径、密度等特性加装滤袋、滤材、滤网等过滤装置,定期回收气相沉积过程中随气路被抽离容器的粉体材料。
热电偶106为控温及测温热电偶,热电偶插入到容器本体内的长度根据具体气相沉积过程的需要进行调整。
气相沉积源气体分布器上表面及侧面的开孔数量及各孔径大小根据具体气相沉积过程进行调整,确保气相沉积源蒸汽通过气体分布器可均匀的注入到气相沉积反应器内。
气相沉积源为固态源、液态源或气态源;固态源、液态源和气态源以蒸汽的形式注入到容器本体内,针对难挥发的固态源及液态源可单独选择加热或增加惰性载气鼓泡、吹扫的方式来提升源蒸汽的注入量,也可选择同时采用加热及惰性载气鼓泡、吹扫的方式来提升源蒸汽的注入量;惰性载气可以是氮气,氩气及氦气的一种。
气相沉积源、进气管,气相沉积反应容器、粉体回收器及出气管,可根据具体待处理粉体材料特性及气相沉积过程对温度的需求,设置内加热丝或外加热带(套)实现特定的温度范围需求。
气相沉积反应容器、固定装置、气相沉积源气体分布器、粉体回收器等部件,均可根据具体待处理粉体材料的体积进行调整,实现粉体材料气相沉积过程的小量实验到批量放大试验,再到工业批量生产。
实施例2:
本实施例提供一种粉体材料声共振–气相沉积装置的实现方法,包括以下步骤:
容器本体内加装粉体材料并通过固定装置将气相沉积反应容器固定于声共振设备上,当气相沉积源、进气管、气相沉积反应容器、出气管达到预设的温度时,设置声共振设备振动加速度(振动频率)使容器本体内粉体材料处于振动翻滚状态,开启气相沉积过程,待气相沉积过程结束后关闭声共振设备,取下气相沉积反应容器并取出粉体材料,完成粉体材料气相沉积。气相沉积包括化学气相沉积(CVD)和原子层沉积(ALD)。
具体的,整个装置各区段根据具体的温度需要采用外加热套方式进行加热;设置并达到气相沉积反应各区段所需温度值,固态、液态源所需惰性载气流量值,反应器内所需真空度值,设置并开启气相沉积实验程序进行气相沉积反应;粉体回收器内加装滤袋,用于回收气相沉积过程中随气体被抽离反应器的粉体材料。
Claims (8)
1.一种粉体材料声共振–气相沉积装置,其特征在于,包括气相沉积反应容器(1)、声共振设备(2)和固定装置(3);
所述气相沉积反应容器(1)能同时作为粉体材料的容器和气相沉积反应器,该气相沉积反应容器(1)包括容器本体(101)、气相沉积源气体分布器(102)、密封盖在容器本体(101)顶部开口上的上盖板(103)、进气管(104)、出气管(105)和热电偶(106);所述气相沉积源气体分布器(102)置于容器本体(101)内,所述进气管(104)贯穿上盖板(103),且进气管(104)一端伸入容器本体(101)内并与气相沉积源气体分布器(102)相连,进气管(104)另一端连接容器本体(101)外部的气相沉积源,进气管(104)能将气相沉积源蒸汽注入到气相沉积源气体分布器(102),气相沉积源气体分布器(102)上表面及侧面开孔以使气相沉积源蒸汽均匀分布在容器本体(101)内;所述热电偶(106)贯穿上盖板(103)伸至容器本体(101)内;所述出气管(105)贯穿上盖板(103)以连通至容器本体(101)内;
所述气相沉积反应容器(1)通过固定装置(3)设在声共振设备(2)上,声共振设备(2)能使气相沉积反应容器(1)内的粉体材料处于振动翻滚状态。
2.如权利要求1所述的粉体材料声共振–气相沉积装置,其特征在于,所述固定装置(3)包括底座(301)、支架(302)、螺杆(303)和压盘(304);底座(301)设在声共振设备(2)上表面,支架(302)包括横板和支撑在横板下的竖杆,竖杆设在底座(301)上,螺杆(303)垂直贯穿横板,压盘(304)固定在螺杆(303)下端;气相沉积反应容器(1)位于底座(301)和压盘(304)之间,通过旋转螺杆(303)能调节压盘(304)的高度以通过压盘(304)紧固气相沉积反应容器(1)。
3.如权利要求1所述的粉体材料声共振–气相沉积装置,其特征在于,所述出气管(105)连接真空产生及控制系统,以确保气相沉积所需的真空条件及整体气体流向。
4.如权利要求1所述的粉体材料声共振–气相沉积装置,其特征在于,所述出气管(105)上设有粉体回收器(107),以回收气相沉积过程中随气流被抽离容器本体的粉体材料。
5.如权利要求1所述的粉体材料声共振–气相沉积装置,其特征在于,所述热电偶(106)为控温及测温热电偶。
6.如权利要求1所述的粉体材料声共振–气相沉积装置,其特征在于,所述气相沉积源为固态源、液态源或气态源;固态源、液态源和气态源以蒸汽的形式注入到容器本体内。
7.一种如权利要求1至6任一权利要求所述的粉体材料声共振–气相沉积装置的实现方法,其特征在于,包括以下步骤:
所述容器本体内加装粉体材料并通过固定装置将气相沉积反应容器固定于声共振设备上,当气相沉积源、进气管、气相沉积反应容器、出气管达到预设的温度时,设置声共振设备振动频率使容器本体内粉体材料处于振动翻滚状态,开启气相沉积过程,待气相沉积过程结束后关闭声共振设备,取下气相沉积反应容器并取出粉体材料,完成粉体材料气相沉积。
8.如权利要求7所述的粉体材料声共振–气相沉积装置的实现方法,其特征在于,所述气相沉积包括化学气相沉积和原子层沉积。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210831285.8A CN115323354A (zh) | 2022-07-14 | 2022-07-14 | 一种粉体材料声共振–气相沉积装置及实现方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210831285.8A CN115323354A (zh) | 2022-07-14 | 2022-07-14 | 一种粉体材料声共振–气相沉积装置及实现方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115323354A true CN115323354A (zh) | 2022-11-11 |
Family
ID=83917723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210831285.8A Pending CN115323354A (zh) | 2022-07-14 | 2022-07-14 | 一种粉体材料声共振–气相沉积装置及实现方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115323354A (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101798677A (zh) * | 2010-03-16 | 2010-08-11 | 北京航空航天大学 | 超声波样品台以及用其进行粉体磁控溅射镀膜的方法 |
CN112941493A (zh) * | 2021-01-29 | 2021-06-11 | 西安近代化学研究所 | 一种脉冲式均匀薄膜快速气相沉积的装置与方法 |
-
2022
- 2022-07-14 CN CN202210831285.8A patent/CN115323354A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101798677A (zh) * | 2010-03-16 | 2010-08-11 | 北京航空航天大学 | 超声波样品台以及用其进行粉体磁控溅射镀膜的方法 |
CN112941493A (zh) * | 2021-01-29 | 2021-06-11 | 西安近代化学研究所 | 一种脉冲式均匀薄膜快速气相沉积的装置与方法 |
Non-Patent Citations (1)
Title |
---|
秦洪岩等: "《膏体充填开采覆岩破坏机理及规律研究》", 应急管理出版社, pages: 36 * |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11236421B2 (en) | Atomic layer deposition device for massively coating micro-nano particles | |
CN105925960B (zh) | 一种用于太阳能电池片生产的原子层沉积真空镀膜装置 | |
US20090169465A1 (en) | Fluidizing bed apparatus for producing carbon nanotubes and carbon nanotube production facility and method using the same | |
CN105648422A (zh) | 一种用于电极粉体材料包覆的气相原子层沉积装置及应用 | |
CN105369221A (zh) | 一种包覆纳米颗粒的原子层沉积装置及其方法 | |
CN112342530B (zh) | 一种重力驱动空间分辨粉末原子层沉积设备、方法及应用 | |
CN110055513B (zh) | 一种粉末原子层沉积设备及其沉积方法与应用 | |
CN104988471A (zh) | 一种快速冷却卷对卷等离子体增强cvd连续生长炉 | |
CN115323354A (zh) | 一种粉体材料声共振–气相沉积装置及实现方法 | |
CN114618399A (zh) | 一种常压下超重力流化修饰纳米催化剂的装置及方法 | |
CN107699866B (zh) | 一种改善流场均匀性的装置 | |
CN201873751U (zh) | 制备多孔材料内壁薄膜的原子层沉积设备 | |
CN112695301A (zh) | 一种气流旋转均匀的气相沉积装置 | |
CN204874732U (zh) | 一种快速冷却卷对卷等离子体增强cvd连续生长炉 | |
CN102477544A (zh) | 制备多孔材料内壁薄膜的原子层沉积方法及其设备 | |
CN115044889B (zh) | 一种石墨基座表面用SiC复合涂层及其制备方法 | |
US6506450B2 (en) | Reactor for coating flat substrates and process for manufacturing such substrates | |
CN216614842U (zh) | 一种原子层沉积设备的快速沉积腔室 | |
CN205774792U (zh) | 一种用于太阳能电池片生产的原子层沉积真空镀膜装置 | |
CN113603093B (zh) | 微硅粉制备方法及设备 | |
CN113046728B (zh) | 一种适用于粉末样品的原子层沉积装置、沉积方法 | |
KR102232833B1 (ko) | 저밀도 글라스 버블 미세 입자의 기능성 코팅을 위한 원자층 증착기 및 이를 이용한 코팅방법 | |
CN210237770U (zh) | 一种用于制备纳米材料的气相反应炉 | |
CN109763116B (zh) | 用于cvd设备的双轴正交旋转系统及方法 | |
CN208815114U (zh) | 一种化学气相沉积镀膜装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |