CN115313011A - Double-frequency Gysel power division filter with high power division ratio - Google Patents
Double-frequency Gysel power division filter with high power division ratio Download PDFInfo
- Publication number
- CN115313011A CN115313011A CN202211078297.4A CN202211078297A CN115313011A CN 115313011 A CN115313011 A CN 115313011A CN 202211078297 A CN202211078297 A CN 202211078297A CN 115313011 A CN115313011 A CN 115313011A
- Authority
- CN
- China
- Prior art keywords
- microstrip line
- microstrip
- line
- power division
- branch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 claims abstract description 24
- 230000009466 transformation Effects 0.000 claims abstract description 23
- 230000010363 phase shift Effects 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 abstract description 7
- 238000004891 communication Methods 0.000 abstract description 4
- 230000006872 improvement Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000013461 design Methods 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000011160 research Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 6
- 230000004927 fusion Effects 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/184—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention is suitable for the technical improvement field of power distribution, and provides a dual-frequency Gysel power division filter with a high power division ratio, which comprises a transformation component, wherein the input end of the transformation component and one end of a short circuit component are respectively connected with the input end (I/P) of the dual-frequency Gysel power division filter, the first output end of the transformation component and one end of a branch component are respectively connected with the output end (O/P1) of the dual-frequency Gysel power division filter, the second output end of the transformation component and the other end of the branch component are respectively connected with the output end (O/P2) of the dual-frequency Gysel power division filter, one end of an open circuit component is connected with the branch component, one end of an isolation component is connected with the branch component, and the dual-frequency filtering effect is realized by adjusting the positions of an input port and an output port to adjust the bandwidth and the equivalent impedance in the transformation component. Simple structure, the flexibility ratio is high, and is more simplified on the structure, and is littleer on the size, helps communication system's miniaturization.
Description
Technical Field
The invention belongs to the field of power distribution technology improvement, and particularly relates to a dual-passband Gysel power division filter which can be applied to a radio frequency front end circuit and integrates a dual-band filtering function and can realize a high power division ratio.
Background
As an indispensable device in a radio frequency front end system, research on a filter and a power divider has been a hot spot of radio frequency device research. Because the two devices generally need to work at the same frequency, the premise of fusion design is provided; moreover, the two devices can be widely combined, and if the two devices can be designed in a fusion mode, the two devices have high application value.
The mainstream fusion design method at present is to use a filter circuit with 90-degree phase shift characteristic to replace a quarter-wavelength microstrip line in a t-shaped structure of the power divider, and the design method has the advantages that: 1. lower insertion loss 2 is realized, the size 3 of the system is greatly reduced, and the matching difficulty before each part of the system is reduced. Based on the design thought, many scholars design various power division filters.
On the basis of the previous fusion design, in order to expand the requirement of a modern communication system for coexistence of a plurality of communication protocols, a learner designs a filter with 90-degree phase shift characteristics in a dual-frequency band, and performs topology analysis on the basis of a dual-frequency power divider to finally obtain parameters of each part of the circuit. Also, the students use the combination of a plurality of resonators or the left-right hand composite material and other technologies to combine the Wilkinson power divider structure for analysis, so that various double-frequency filtering power dividers are realized.
The existing dual-band power division filter mainly has the following problems:
1. the research is based on the structure of the Wilkinson power divider, but the isolating device of the Wilkinson power divider is only one internal resistor, and the inside of the isolating device is lack of a grounding part, so that the device based on the isolating device cannot work in a high-power scene. And a blank exists in the analysis of the Gysel power divider with the isolation part having the grounding resistance.
2. The research is mainly focused on the realization of an equal-division power divider filter, but the requirements of application such as an array antenna on an unequal-division power divider are ignored, and the application scene of the power divider filter is narrowed.
Disclosure of Invention
In view of the above problems and the blank of the current research, the present invention provides a Gysel power divider with dual-band filtering effect. Compared with the existing power division filter, the design blank of the unequal power division filter is filled, the Gysel power divider type which can be applied to a high-power scene is used, and the application scene is widened; compared with the traditional Gysel power division filter, the invention uses an impedance transformer with 90-degree phase shift in dual frequency bands to replace a quarter-wavelength high-impedance microstrip line in the power division filter. After the design, the power division ratio can reach 10, the bandwidth can be controlled randomly, and meanwhile, three transmission zeros are introduced to the edge of the passband, so that the frequency selectivity is improved.
The invention aims to provide a dual-frequency Gysel power division filter with a high power division ratio, and aims to solve the technical problems.
The invention is realized in such a way that the dual-frequency Gysel power division filter with the high power division ratio comprises a transformation component, a branch component, an open circuit component, a short circuit component and an isolation component, wherein the input end of the transformation component and one end of the short circuit component are respectively connected with the input end (I/P) of the dual-frequency Gysel power division filter with the high power division ratio, the first output end of the transformation component and one end of the branch component are respectively connected with the output end (O/P1) of the dual-frequency Gysel power division filter with the high power division ratio, the second output end of the transformation component and the other end of the branch component are respectively connected with the output end (O/P2) of the dual-frequency Gysel power division filter with the high power division ratio, one end of the open circuit component is connected with the branch component, one end of the isolation component is connected with the branch component, and the transformation component adjusts matched impedance by adjusting the coupling strength between two resonators in an impedance converter and the length ratio of a port position.
The further technical scheme of the invention is as follows: the length of the microstrip line of the dual-frequency Gysel power division filter should satisfy a functional expression: (1 + m) theta = pi, so as to ensure that the angle tangent value under the double frequency bands is unchanged, wherein m is the ratio of two working frequencies, and theta is the length of the microstrip line under the first working frequency.
The further technical scheme of the invention is as follows: the transformation component comprises a first impedance transformer and a second impedance transformer which have 90-degree phase shift at two working frequencies, and the input end of the first impedance transformer is connected with the input end of the second impedance transformer.
The further technical scheme of the invention is as follows: the first impedance converter comprises two identical first resonators which are oppositely arranged and coupled, each first resonator comprises a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line and a first open-circuit microstrip line, two ends of each first microstrip line are respectively connected with one end of the second microstrip line and one end of the fifth microstrip line, the other end of each second microstrip line is connected with one end of the third microstrip line, the other end of each fifth microstrip line is connected with one end of the fourth microstrip line, one end of each first open-circuit microstrip line is connected with the corresponding first microstrip line, and the other end of each first open-circuit microstrip line is adjacent to the corresponding fourth microstrip line.
The further technical scheme of the invention is as follows: the second microstrip line and the fifth microstrip line are positioned on the same side of the first microstrip line, the first microstrip line and the third microstrip line are positioned on different sides of the second microstrip line, the first microstrip line and the fourth microstrip line are positioned on the same side of the fifth microstrip line, the first microstrip line and the fourth microstrip line are parallel, an extension line of the first microstrip line is parallel to the third microstrip line, the second bit strip line, the fifth microstrip line and the first open-circuit microstrip line are parallel to each other, and a central line of the third microstrip line and a central line of the fourth microstrip line are positioned on the same straight line.
The invention further adopts the technical scheme that: the second impedance converter comprises two identical second resonators, the two second resonators are oppositely arranged and coupled, each second resonator comprises a sixth microstrip line, a seventh microstrip line, an eighth microstrip line, a ninth strip line, a tenth microstrip line and a second open-circuit microstrip line, two ends of the sixth microstrip line are respectively connected with one end of the seventh microstrip line and one end of the ninth strip line, the other end of the seventh microstrip line is connected with one end of the eighth microstrip line, the other end of the ninth microstrip line is connected with one end of the tenth microstrip line, and one end of the second open-circuit microstrip line is connected with the sixth microstrip line.
The further technical scheme of the invention is as follows: the seventh microstrip line and the ninth microstrip line are located on the same side of the sixth microstrip line, the eighth microstrip line and the sixth microstrip line are located on the same side of the seventh microstrip line, the sixth microstrip line and the tenth microstrip line are located on different sides of the ninth microstrip line, the seventh microstrip line, the second open-circuit microstrip line and the ninth microstrip line are parallel to each other, the sixth microstrip line and the eighth microstrip line are parallel to each other, an extension line of the sixth microstrip line and the tenth microstrip line are parallel to each other, and a central line of the tenth microstrip line and a central line of the eighth microstrip line are located on the same straight line.
The further technical scheme of the invention is as follows: the branch line component comprises a first branch line, a second branch line, a third branch line and a fourth branch line, one end of the first branch line is connected with an output port (O/P1), the other end of the first branch line is connected with one end of the second branch line, the other end of the second branch line is connected with one end of the third branch line, the other end of the third branch line is connected with one end of the fourth branch line, and the other end of the fourth branch line is connected with an output port (O/P2).
The further technical scheme of the invention is as follows: the second branch line comprises an eleventh microstrip line, a twelfth microstrip line and a thirteenth microstrip line, two ends of the twelfth microstrip line are respectively connected with one end of the eleventh microstrip line and one end of the thirteenth microstrip line, the eleventh microstrip line and the thirteenth microstrip line are located on different sides of the twelfth microstrip line, and the eleventh microstrip line and the thirteenth microstrip line are parallel to each other in the same plane.
The further technical scheme of the invention is as follows: the third branch line comprises a fourteenth microstrip line, a fifteenth microstrip line and a sixteenth microstrip line, two ends of the fifteenth microstrip line are respectively connected with one end of the fourteenth microstrip line and one end of the sixteenth microstrip line, the fourteenth microstrip line and the sixteenth microstrip line are located on different sides of the fifteenth microstrip line, and the fourteenth microstrip line and the sixteenth microstrip line are parallel to each other in the same plane.
The further technical scheme of the invention is as follows: the short-circuit assembly comprises a short-circuit microstrip line, one end of the short-circuit microstrip line is connected with an input port (I/P), the other end of the short-circuit microstrip line is grounded through a via hole, and the short-circuit microstrip line is positioned between the first impedance converter and the second impedance converter; the open-circuit assembly comprises a third open-circuit microstrip line, and one end of the third open-circuit microstrip line is connected with the joint of the thirteenth microstrip line and the fourteenth microstrip line; the first branch line adopts a seventeenth microstrip line; the fourth branch line adopts an eighteenth microstrip line; the isolation unit adopts an isolation resistor, the isolation resistor comprises a resistor R1 and a resistor R2, one end of the resistor R1 is connected with the other end of the first branch line, the other end of the resistor R1 is grounded, one end of the resistor R2 is connected with one end of the fourth branch line, and the other end of the resistor R2 is grounded.
The invention has the beneficial effects that: compared with the prior art, the invention has the following advantages:
(1) The second working frequency can be independently adjusted, the structure is simple, and the flexibility is high.
(2) Compared with a mode of cascade connection of a power divider and a filter, the method has the advantages of avoiding the complexity of joint matching of multiple devices, having the performance of low insertion loss, simplifying the structure, reducing the size, having larger volume optimization space, contributing to miniaturization of a communication system and reducing the matching difficulty caused by cascade connection of multiple devices.
(3) The advantages that the Gysel power divider is suitable for high-power scenes are reserved, and signals of the Gysel power divider have frequency selectivity under double frequency bands.
(4) The research blank of the unequal power divider in the current double-frequency power divider research is filled, and the device design method under different application scenes is enriched.
(5) The high power ratio of 10 can be realized, the problem that the microstrip line is difficult to process under high impedance is solved through a coupling structure which is convenient to use and adjusts matching impedance, and the microstrip line can be applied to an antenna array needing the high power ratio.
(6) Three transmission zeros are arranged around the passband, and the transmission zeros can enable signals to have stronger inhibition outside the passband, so that the performance of the filter is better, and the signals have stronger frequency selectivity.
Drawings
Fig. 1 is a topology structure diagram of a device of a Gysel filter power divider with a power division ratio of 10.
Fig. 2 is a schematic diagram of a second impedance converter of the Gysel filter power divider under the condition of 10.
Fig. 3 is a schematic diagram of a first impedance converter of a Gysel filter power divider under the condition of 10.
Fig. 4 is a first simulation result of transmission characteristics of a dual-frequency Gysel power division filter designed according to conditions of 10.
Fig. 5 is a simulation result two of the transmission characteristics of the dual-frequency Gysel power division filter designed according to the condition of 10.
Detailed Description
As shown in fig. 1 to 5, the dual-frequency Gysel power division filter with a high power division ratio provided by the present invention includes a transformation component, a branch component, an open component, a short-circuit component and an isolation component, wherein an input end of the transformation component and one end of the short-circuit component are respectively connected to an input end (I/P) of the dual-frequency Gysel power division filter with a high power division ratio, a first output end of the transformation component and one end of the branch component are respectively connected to an output end (O/P1) of the dual-frequency Gysel power division filter with a high power division ratio, a second output end of the transformation component and the other end of the branch component are respectively connected to an output end (O/P2) of the dual-frequency Gysel power division filter with a high power division ratio, one end of the open component is connected to the branch component, one end of the isolation component is connected to the branch component, and the transformation component adjusts matched impedance by adjusting a coupling strength between two resonators in an impedance transformer and a length ratio of a port position.
The length of the microstrip line of the dual-frequency Gysel power division filter should satisfy a functional formula: (1 + m) theta = pi, so as to ensure that the angle tangent value under the double frequency bands is unchanged, wherein m is the ratio of two working frequencies, and theta is the length of the microstrip line under the first working frequency. The angle tangent value is a tangent value corresponding to the electrical length theta of the microstrip lines except the impedance transformer in the power division filter at the first operating frequency.
The integrated transformer is composed of two transformers, four common microstrip lines, an open-circuit microstrip line, a short-circuit microstrip line and two grounding isolation resistors. The converter has the characteristic that two working frequencies have the same phase shift of 90 degrees, and other branch lines have the characteristic that the electrical lengths of the two branch lines are complementary under two frequency bands, namely (1 + m) · theta = pi: wherein m is the ratio of the two working frequencies, and theta is the corresponding microstrip line electrical length under the first working frequency.
The transformation component comprises a first impedance transformer and a second impedance transformer which have the same working frequency and 90-degree phase shift, and the input end of the first impedance transformer is connected with the input end of the second impedance transformer.
The converter is mainly divided into two resonators, the two resonators of each converter are completely the same and consist of five microstrip lines with the electrical length of one half wavelength and a central branch open-circuit microstrip line, and the two resonators are coupled and connected through two microstrip lines and are oppositely arranged. The transformer can be matched with different characteristic impedances by adjusting the position of the port and the coupling strength, and can also independently adjust a second frequency operating point and equivalent impedance by adjusting the length of the central branch open-circuit microstrip line. Three transmission zeros are introduced beside the transmission characteristic of the converter, so that the frequency selectivity is increased.
The first impedance transformer comprises two identical first resonators 1 and 2, the two first resonators 1 and 2 are oppositely arranged and coupled, the first resonators 1 and 2 comprise a first microstrip line 11, a second microstrip line 12, a third microstrip line 13, a fourth microstrip line 15, a fifth microstrip line 16 and a first open-circuit microstrip line 14, two ends of the first microstrip line 11 are respectively connected with one end of the second microstrip line 12 and one end of the fifth microstrip line 16, the other end of the second microstrip line 12 is connected with one end of the third microstrip line 13, the other end of the fifth microstrip line 16 is connected with one end of the fourth microstrip line 15, one end of the first open-circuit microstrip line 14 is connected with the first microstrip line 11, and the other end of the first open-circuit microstrip line 14 is adjacent to the fourth microstrip line 15.
The lengths of the first open-circuit microstrip line 14 and the microstrip line corresponding to each resonator are obtained according to the ratio of two working frequency points of the power divider, the specific frequency is determined to satisfy the functional expression,
where L1 is the length of the impedance transformer excluding the center leg and L2 is the length of the center leg, so that a separate adjustment of L2 to adjust the second operating frequency can be achieved after the resonator length is fixed.
The second microstrip line 12 and the fifth microstrip line 16 are located on the same side of the first microstrip line 11, the first microstrip line 11 and the third microstrip line 13 are located on different sides of the second microstrip line 12, the first microstrip line 11 and the fourth microstrip line 15 are located on the same side of the fifth microstrip line 16, the first microstrip line 11 is parallel to the fourth microstrip line 15, an extension line of the first microstrip line 11 is parallel to the third microstrip line 13, the second microstrip line 12, the fifth microstrip line 16 and the first open-circuit microstrip line 14 are parallel to each other, and a central line of the third microstrip line 13 and a central line of the fourth microstrip line 15 are located on the same straight line.
The second impedance transformer comprises two identical second resonators 3 and 4, the two second resonators 3 and 4 are oppositely arranged and coupled, the second resonators 3 and 4 comprise a sixth microstrip line 17, a seventh microstrip line 18, an eighth microstrip line 19, a ninth microstrip line 21, a tenth microstrip line 22 and a second open-circuit microstrip line 20, two ends of the sixth microstrip line 17 are respectively connected with one end of the seventh microstrip line 18 and one end of the ninth microstrip line 21, the other end of the seventh microstrip line 18 is connected with one end of the eighth microstrip line 19, the other end of the ninth microstrip line 21 is connected with one end of the tenth microstrip line 22, and one end of the second open-circuit microstrip line 20 is connected with the sixth microstrip line.
The seventh microstrip line 18 and the ninth microstrip line 21 are located on the same side of the sixth microstrip line 17, the eighth microstrip line 19 and the sixth microstrip line 17 are located on the same side of the seventh microstrip line 18, the sixth microstrip line 17 and the tenth microstrip line 22 are located on different sides of the ninth microstrip line, the seventh microstrip line 18, the second open-circuit microstrip line 20 and the ninth microstrip line 21 are parallel to each other, the sixth microstrip line 17 is parallel to the eighth microstrip line 19, an extension line of the sixth microstrip line 17 is parallel to the tenth microstrip line 22, and a central line of the tenth microstrip line 22 and a central line of the eighth microstrip line 19 are located on the same straight line.
The branch line assembly comprises a first branch line 6, a second branch line 7, a third branch line 8 and a fourth branch line 9, one end of the first branch line 6 is connected with an output port (O/P1), the other end of the first branch line 6 is connected with one end of the second branch line 7, the other end of the second branch line 7 is connected with one end of the third branch line 8, the other end of the third branch line 8 is connected with one end of the fourth branch line 9, and the other end of the fourth branch line 9 is connected with an output port (O/P2).
The second branch line 7 includes an eleventh microstrip line 23, a twelfth microstrip line 24 and a thirteenth microstrip line 25, two ends of the twelfth microstrip line 24 are respectively connected to one end of the eleventh microstrip line 23 and one end of the thirteenth microstrip line 25, the eleventh microstrip line 23 and the thirteenth microstrip line 25 are located on different sides of the twelfth microstrip line 24, and the eleventh microstrip line 23 and the thirteenth microstrip line 25 are parallel in the same plane.
The third branch line 8 includes a fourteenth microstrip line 26, a fifteenth microstrip line 27 and a sixteenth microstrip line 28, two ends of the fifteenth microstrip line 27 are respectively connected to one end of the fourteenth microstrip line 26 and one end of the sixteenth microstrip line 28, the fourteenth microstrip line 26 and the sixteenth microstrip line 28 are located on different sides of the fifteenth microstrip line 27, and the fourteenth microstrip line 26 and the sixteenth microstrip line 28 are parallel to each other in the same plane.
The short-circuit assembly comprises a short-circuit microstrip line 5, one end of the short-circuit microstrip line 5 is connected with an input port (I/P), the other end of the short-circuit microstrip line 5 is grounded through a via hole, and the short-circuit microstrip line 5 is positioned between the first impedance converter and the second impedance converter; the open-circuit assembly comprises a third open-circuit microstrip line 10, and one end of the third open-circuit microstrip line 10 is connected with the connection position of the thirteenth microstrip line 25 and the fourteenth microstrip line 26; the first branch line 6 adopts a seventeenth microstrip line; the fourth branch line 9 adopts an eighteenth microstrip line; the isolation unit adopts an isolation resistor, the isolation resistor comprises a resistor R1 and a resistor R2, one end of the resistor R1 is connected with the other end of the first branch line 6, the other end of the resistor R1 is grounded, one end of the resistor R2 is connected with one end of the fourth branch line 9, and the other end of the resistor R2 is grounded.
In order to ensure that the device still ensures good isolation and matching under the condition of realizing the dual-band filtering power division function fusion design, the isolation part of the traditional Gysel power divider needs to be modified, so that the device can meet the requirement of dual bands. A short-circuit microstrip line and an open-circuit microstrip line are introduced on the basis of an isolation part of a traditional Gysel power divider. The short-circuit microstrip line is positioned between the two converters and the input port and is connected with the ground through the via hole; one end of the open-circuit microstrip line is connected between the microstrip lines 7 and 8. Their characteristic impedance can be obtained by a method of matching one port with two ports, and in order to ensure the same impedance characteristics at different frequencies, the microstrip line electrical length except for the resonator should satisfy the complementary condition, (1 + m) × θ = pi: wherein, m is the ratio of two working frequencies, and theta is the length of the corresponding microstrip line under the first working frequency.
The grounding resistor is connected between the microstrip lines 6 and 7, and between the microstrip lines 7 and 9 as an isolation device, and is connected with the ground, and the value of the grounding resistor can be obtained by a port matching method, so that the design enables the power division filter to dissipate heat outside the device when working, and the grounding resistor is suitable for a high-power working scene.
Examples
The structure of the dual-frequency Gysel power division filter with a high power division ratio is shown in FIG. 1, the thickness of the dielectric substrate is 0.508mm, and the relative dielectric constant is 3.55.
Fig. 4 and 5 are simulation results of transmission characteristics of a dual-frequency Gysel power division filter under a 10. In the figure, the horizontal axis represents frequency, and the vertical axis represents transmission characteristics in dB. In fig. 4, S11 represents the input return loss of the double-frequency equal-division Gysel power division filter, S21 and S31 represent the insertion loss from the first output port (O/P1) and the second output port (O/P2) to the input port (I/P) when the input ports (I/P) are matched, respectively, and the simulation result shows that: 10, the Gysel double-frequency power division filter under the power division ratio of 1 has two working frequency points which are respectively 1.88GHz and 3.03GHz; the input return loss S11 is lower than-15 dB in the pass band near the working frequency point, is-18.3 dB at the working frequency point of about 1.88GHz and is-19.1 dB at the working frequency point of about 3.03GHz; the value of the insertion loss S21 is-11.3 dB at the working frequency of 1.88GHz, is-11.35 dB at the working frequency of 3.03GHz, and the theoretical value is-10.4 dB; the value of the insertion loss S31 is-1.25 dB at the working frequency of 1.88GHz, is-1.2 dB at the working frequency of 3.03GHz, and the theoretical value is-0.4 dB; the difference between S21 and S31 is 10.05dB at an operating frequency of 1.88GHz and 10.1dB at an operating frequency of 3.03GHz, very close to its theoretical value of 10dB.
And three transmission zeros are shared near the two pass bands, so that the frequency selectivity of the filtering power divider is enhanced. In fig. 5, S22 and S33 represent output return losses of the first output port (O/P1) and the second output port (O/P2), respectively, and S23 represents isolation coefficients of the first output port (O/P1) and the second output port (O/P2). The simulation result shows that: the passband near the two working frequency points is lower than-15 dB, so that the matching of two ports and three ports is realized; the isolation coefficient S23 is lower than-15 dB in the whole pass band near the working frequency point, is-24.2 dB at the working frequency point of 1.88GHz, and is-27.5 dB at the working frequency point of 3.03 GHz.
Simulation results of the embodiment show that the dual-frequency Gysel power division filter under the power division ratio of 10 can realize dual-frequency operation, and the power distribution function and the filtering function of 10.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A dual-frequency Gysel power division filter with a high power division ratio is characterized by comprising a transformation component, a branch component, an open circuit component, a short circuit component and an isolation component, wherein an input end of the transformation component and one end of the short circuit component are respectively connected with an input end (I/P) of the dual-frequency Gysel power division filter with the high power division ratio, a first output end of the transformation component and one end of the branch component are respectively connected with an output end (O/P1) of the dual-frequency Gysel power division filter with the high power division ratio, a second output end of the transformation component and the other end of the branch component are respectively connected with an output end (O/P2) of the dual-frequency Gysel power division filter with the high power division ratio, one end of the open circuit component is connected with the branch component, one end of the isolation component is connected with the branch component, and the transformation component adjusts matched impedance by adjusting the coupling strength between two resonators in an impedance transformer and the length ratio of a port position.
2. The dual-frequency Gysel power division filter with a high power division ratio as claimed in claim 1, wherein the microstrip line length of the dual-frequency Gysel power division filter should satisfy the functional formula: (1 + m) theta = pi, so as to ensure that the angle tangent value under the double frequency bands is unchanged, wherein m is the ratio of two working frequencies, and theta is the length of the microstrip line under the first working frequency; the transformation component comprises a first impedance transformer and a second impedance transformer which have 90-degree phase shift at two working frequencies, and the input end of the first impedance transformer is connected with the input end of the second impedance transformer.
3. The dual-band Gysel power division filter with a high power division ratio of claim 2, wherein the first impedance transformer comprises two identical first resonators, the two first resonators are oppositely disposed and coupled, the first resonators comprise a first microstrip, a second microstrip, a third microstrip, a fourth microstrip, a fifth microstrip and a first open-circuit microstrip, two ends of the first microstrip are respectively connected to one end of the second microstrip and one end of the fifth microstrip, the other end of the second microstrip is connected to one end of the third microstrip, the other end of the fifth microstrip is connected to one end of the fourth microstrip, one end of the first open-circuit microstrip is connected to the first microstrip, and the other end of the first open-circuit microstrip is adjacent to the fourth microstrip.
4. The dual-band Gysel power division filter with high power division ratio as claimed in claim 3, wherein the second microstrip line and the fifth microstrip line are located on the same side of the first microstrip line, the first microstrip line and the third microstrip line are located on different sides of the second microstrip line, the first microstrip line and the fourth microstrip line are located on the same side of the fifth microstrip line, the first microstrip line and the fourth microstrip line are parallel, the extension line of the first microstrip line is parallel to the third microstrip line, the second bit strip line, the fifth microstrip line and the first open-circuit microstrip line are parallel to each other, and the center line of the third microstrip line and the center line of the fourth microstrip line are located on the same straight line.
5. The dual-band Gysel power-dividing filter with high power-dividing ratio as claimed in claim 4, wherein the second impedance transformer comprises two identical second resonators, the two second resonators are oppositely disposed and coupled, the second resonators comprise a sixth microstrip, a seventh microstrip, an eighth microstrip, a ninth microstrip, a tenth microstrip and a second open-circuit microstrip, two ends of the sixth microstrip are respectively connected to one end of the seventh microstrip and one end of the ninth microstrip, the other end of the seventh microstrip is connected to one end of the eighth microstrip, the other end of the ninth microstrip is connected to one end of the tenth microstrip, and one end of the second open-circuit microstrip is connected to the sixth microstrip.
6. The dual-band Gysel power division filter with a high power division ratio of claim 5, wherein the seventh microstrip line and the ninth microstrip line are located on the same side of the sixth microstrip line, the eighth microstrip line and the sixth microstrip line are located on the same side of the seventh microstrip line, the sixth microstrip line and the tenth microstrip line are located on different sides of the ninth microstrip line, the seventh microstrip line, the second open-circuit microstrip line and the ninth microstrip line are parallel to each other, the sixth microstrip line and the eighth microstrip line are parallel, an extension line of the sixth microstrip line is parallel to the tenth microstrip line, and a center line of the tenth microstrip line and a center line of the eighth microstrip line are located on the same straight line.
7. The dual-band Gysel power division filter with a high power division ratio as claimed in claim 6, wherein the branch line assembly comprises a first branch line, a second branch line, a third branch line and a fourth branch line, one end of the first branch line is connected to an output port (O/P1), the other end of the first branch line is connected to one end of the second branch line, the other end of the second branch line is connected to one end of the third branch line, the other end of the third branch line is connected to one end of the fourth branch line, and the other end of the fourth branch line is connected to an output port (O/P2).
8. The dual-band Gysel power division filter with a high power division ratio of claim 7, wherein the second branch line comprises an eleventh microstrip line, a twelfth microstrip line and a thirteenth microstrip line, two ends of the twelfth microstrip line are respectively connected to one end of the eleventh microstrip line and one end of the thirteenth microstrip line, the eleventh microstrip line and the thirteenth microstrip line are located on different sides of the twelfth microstrip line, and the eleventh microstrip line and the thirteenth microstrip line are parallel to each other in the same plane.
9. The dual-band Gysel power division filter with high power division ratio of claim 8, wherein the third branch line comprises a fourteenth microstrip line, a fifteenth microstrip line and a sixteenth microstrip line, two ends of the fifteenth microstrip line are respectively connected to one end of the fourteenth microstrip line and one end of the sixteenth microstrip line, the fourteenth microstrip line and the sixteenth microstrip line are located on different sides of the fifteenth microstrip line, and the fourteenth microstrip line and the sixteenth microstrip line are parallel to each other in the same plane.
10. The dual-band Gysel power dividing filter with high power dividing ratio as claimed in claim 9, wherein the short-circuit component comprises a short-circuited microstrip line, one end of the short-circuited microstrip line is connected to the input port (I/P), the other end of the short-circuited microstrip line is grounded through a via hole, and the short-circuited microstrip line is located between the first impedance transformer and the second impedance transformer; the open-circuit assembly comprises a third open-circuit microstrip line, and one end of the third open-circuit microstrip line is connected with the joint of the thirteenth microstrip line and the fourteenth microstrip line; the first branch line adopts a seventeenth microstrip line; the fourth branch line adopts an eighteenth microstrip line; the isolation unit adopts an isolation resistor, the isolation resistor comprises a resistor R1 and a resistor R2, one end of the resistor R1 is connected with the other end of the first branch line, the other end of the resistor R1 is grounded, one end of the resistor R2 is connected with one end of the fourth branch line, and the other end of the resistor R2 is grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211078297.4A CN115313011B (en) | 2022-09-05 | 2022-09-05 | Dual-frequency Gysel power dividing filter with high power ratio |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211078297.4A CN115313011B (en) | 2022-09-05 | 2022-09-05 | Dual-frequency Gysel power dividing filter with high power ratio |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115313011A true CN115313011A (en) | 2022-11-08 |
| CN115313011B CN115313011B (en) | 2024-05-07 |
Family
ID=83867446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211078297.4A Active CN115313011B (en) | 2022-09-05 | 2022-09-05 | Dual-frequency Gysel power dividing filter with high power ratio |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115313011B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201699114U (en) * | 2010-06-23 | 2011-01-05 | 中国科学院微电子研究所 | Microwave dual-frequency power divider based on Gysel type power divider |
| CN102637938A (en) * | 2011-02-15 | 2012-08-15 | 中国科学院微电子研究所 | Double-frequency power divider and design method thereof |
| CN103700917A (en) * | 2013-12-20 | 2014-04-02 | 华南理工大学 | Gysel power distribution filter with high power distribution ratio |
| CN105098303A (en) * | 2015-08-25 | 2015-11-25 | 华南理工大学 | Power divider with double-band filter function |
| CN111146553A (en) * | 2020-01-10 | 2020-05-12 | 大连海事大学 | Double-frequency balance/unbalance power divider with independent arbitrary power dividing ratio |
-
2022
- 2022-09-05 CN CN202211078297.4A patent/CN115313011B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201699114U (en) * | 2010-06-23 | 2011-01-05 | 中国科学院微电子研究所 | Microwave dual-frequency power divider based on Gysel type power divider |
| CN102637938A (en) * | 2011-02-15 | 2012-08-15 | 中国科学院微电子研究所 | Double-frequency power divider and design method thereof |
| CN103700917A (en) * | 2013-12-20 | 2014-04-02 | 华南理工大学 | Gysel power distribution filter with high power distribution ratio |
| CN105098303A (en) * | 2015-08-25 | 2015-11-25 | 华南理工大学 | Power divider with double-band filter function |
| CN111146553A (en) * | 2020-01-10 | 2020-05-12 | 大连海事大学 | Double-frequency balance/unbalance power divider with independent arbitrary power dividing ratio |
Non-Patent Citations (1)
| Title |
|---|
| 陈胥哲: "数字电视发射系统宽带功分器的设计", 《中国优秀硕士学位论文全文数据库》, pages 18 - 19 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115313011B (en) | 2024-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103633400B (en) | A kind of micro-strip duplexer based on electromagnetism hybrid coupled | |
| EP2127018A1 (en) | Power divider and power combiner using dual band - composite right / left handed transmission line | |
| CN101976754A (en) | Tri-band Wilkinson power distributor | |
| CN105514547A (en) | Low-pass band-pass five-duplex based on novel frequency separation structure | |
| CN103915669A (en) | Filtering power divider with double passing bands | |
| CN114284673B (en) | Substrate integrated waveguide dual-band filtering balun | |
| CN103268968B (en) | A kind of without the need to the height isolation micro-strip duplexer of matching network with ultra wide band channel | |
| CN111384534A (en) | Three-way band-pass power division filter | |
| CN111147159A (en) | Calibration circuit, calibration network and smart antenna | |
| CN100495814C (en) | Any dual-frequency band 3dB branch directional coupler | |
| CN205159476U (en) | Power distribution unit with double frequency -band filtering function | |
| CN101950826B (en) | Square annular defected ground structure microwave dual-mode band-pass filter | |
| CN218101661U (en) | Double-frequency Gysel power division filter with high power division ratio | |
| CN201060919Y (en) | Arbitrarily dual-frequency band 3dB branch directional coupler | |
| CN115313011B (en) | Dual-frequency Gysel power dividing filter with high power ratio | |
| CN216120688U (en) | Three-frequency-band combiner | |
| CN213717039U (en) | Miniaturized low-pass Wilkinson power divider | |
| CN205621824U (en) | Five multiplexers of low pass - band -pass based on novel frequency separation structure | |
| Tan et al. | Tunable couplers: An overview of recently developed couplers with tunable functions | |
| CN102569955B (en) | Dual-frequency band-pass filter based on asymmetric branch node load resonators | |
| CN115332755B (en) | Dual-frequency equal-division Gysel power division filter | |
| CN105529514A (en) | Circular-ring multi-mode coupling ultra-wideband micro-strip band-pass filter | |
| CN219873998U (en) | Upper layer microstrip structure of filter power divider and novel Gysel filter power divider | |
| CN112713378A (en) | Ultra-wideband miniaturized power divider, design method and multi-channel communication network terminal | |
| CN218039765U (en) | Upper-layer microstrip structure of power division filter and double-frequency equal division Gysel power division filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |