CN218101661U - Double-frequency Gysel power division filter with high power division ratio - Google Patents

Double-frequency Gysel power division filter with high power division ratio Download PDF

Info

Publication number
CN218101661U
CN218101661U CN202222350829.7U CN202222350829U CN218101661U CN 218101661 U CN218101661 U CN 218101661U CN 202222350829 U CN202222350829 U CN 202222350829U CN 218101661 U CN218101661 U CN 218101661U
Authority
CN
China
Prior art keywords
microstrip
microstrip line
line
branch
power division
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202222350829.7U
Other languages
Chinese (zh)
Inventor
王凯旭
吴泽宇
滕文毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Graduate School Harbin Institute of Technology
Original Assignee
Shenzhen Graduate School Harbin Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Graduate School Harbin Institute of Technology filed Critical Shenzhen Graduate School Harbin Institute of Technology
Priority to CN202222350829.7U priority Critical patent/CN218101661U/en
Application granted granted Critical
Publication of CN218101661U publication Critical patent/CN218101661U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/40Arrangements for reducing harmonics

Landscapes

  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The utility model is suitable for a power distribution technology improves the field, provides a filter is divided to dual-frenquency Gysel merit with high power division ratio, including the transform subassembly, the input of transform subassembly and the Input (IP) of dual-frenquency Gysel merit branch filter are connected respectively to the one end of short circuit subassembly, and the output (O/P1) of dual-frenquency Gysel merit branch filter is connected respectively to the first output of transform subassembly and the one end of branch line subassembly, and the output (O/P2) of dual-frenquency Gysel merit branch filter is connected respectively to the second output of transform subassembly and the other end of branch line subassembly, and the branch line subassembly is connected to the one end of the subassembly of opening a way, and the branch line subassembly is connected to the one end of isolation subassembly. Simple structure, the flexibility ratio is high, and is more simplified on the structure, and is littleer on the size, helps communication system's miniaturization.

Description

Dual-frequency Gysel power division filter with high power division ratio
Technical Field
The utility model belongs to the technical improvement field of power distribution, especially, relate to can use the double-frenquency section Gysel merit branch wave filter that can realize high power division ratio at the integrated dual band filtering capability of radio frequency front end circuit.
Background
As indispensable devices in the rf front-end system, the research on filters and power splitters has been the hot spot of the rf device research. Because the two devices generally need to work at the same frequency, the premise of fusion design is provided; moreover, the two devices can be widely combined, and if the two devices can be designed in a fusion mode, the two devices have high application value.
The mainstream fusion design method at present is to use a filter circuit with 90-degree phase shift characteristic to replace a quarter-wavelength microstrip line in a t-shaped structure of the power divider, and the design method has the advantages that: 1. lower insertion loss 2 is realized, the size 3 of the system is greatly reduced, and the matching difficulty before each part of the system is reduced. Based on the design thought, many scholars design various power division filters.
On the basis of the previous fusion design, in order to expand the requirement of a modern communication system for coexistence of a plurality of communication protocols, a learner designs a filter with 90-degree phase shift characteristics in a dual-frequency band, and performs topology analysis on the basis of a dual-frequency power divider to finally obtain parameters of each part of the circuit. Also, the students use the combination of a plurality of resonators or the left-right hand composite material and other technologies to combine the Wilkinson power divider structure for analysis, so that various double-frequency filtering power dividers are realized.
The existing dual-band power division filter mainly has the following problems:
1. the research is based on the structure of the Wilkinson power divider, but the isolating device of the Wilkinson power divider is only an internal resistor, and a grounding part is lacked inside the isolating device, so that the device based on the isolating device can not work in a high-power scene. And a blank exists in the analysis of the Gysel power divider with the isolation part having the grounding resistance.
2. The research is mainly focused on the realization of the equal-division power division filter, but the requirements of the application of an array antenna and the like on the unequal-division power divider are ignored, and the application scene of the power division filter is narrowed.
SUMMERY OF THE UTILITY MODEL
In view of the above problems and the blank of the current research, the utility model provides a dual-frenquency Gysel merit divides filter with high merit ratio. Compared with the existing power division filter, the design blank of the unequal power division filter is filled, the Gysel power divider type which can be applied to a high-power scene is used, and the application scene is widened; compared with the traditional Gysel power division filter, the utility model uses an impedance converter with 90-degree phase shift under dual frequency bands to replace a high impedance microstrip line with a quarter wavelength in the power division filter. After the design, the power division ratio can reach 10, the bandwidth can be controlled randomly, and meanwhile, three transmission zeros are introduced to the edge of the pass band, so that the frequency selectivity is improved.
An object of the utility model is to provide a double-frenquency Gysel merit divides wave filter with high power ratio aims at solving foretell technical problem.
The utility model discloses a realize like this, a filter is divided to dual-frenquency Gysel merit with high merit ratio, filter is divided including transform subassembly, branch line subassembly, the subassembly that opens a way, short circuit subassembly and isolation assembly to the dual-frenquency Gysel merit with high merit ratio, the input (I/P) that filter is divided to the dual-frenquency Gysel merit with high merit ratio is connected respectively to the input of transform subassembly and the one end of short circuit subassembly, the first output of transform subassembly with the one end of branch line subassembly is connected respectively the output (O/P1) that filter is divided to the dual-frenquency Gysel merit with high merit ratio, the second output of transform subassembly with the other end of branch line subassembly is connected respectively the output (O/P2) that filter is divided to the dual-frenquency Gysel merit with high merit ratio, the one end of subassembly of opening a way is connected the branch line subassembly, the one end of isolation assembly is connected the branch line subassembly.
The utility model discloses a further technical scheme is: the transformation component comprises a first impedance transformer and a second impedance transformer which have 90-degree phase shift at two working frequencies, and the input end of the first impedance transformer is connected with the input end of the second impedance transformer.
The utility model discloses a further technical scheme is: the first impedance converter comprises two identical first resonators, the two first resonators are oppositely arranged and coupled, each first resonator comprises a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line and a first open-circuit microstrip line, two ends of each first microstrip line are respectively connected with one end of each second microstrip line and one end of each fifth microstrip line, the other end of each second microstrip line is connected with one end of each third microstrip line, the other end of each fifth microstrip line is connected with one end of each fourth microstrip line, one end of each first open-circuit microstrip line is connected with the corresponding first microstrip line, and the other end of each first open-circuit microstrip line is adjacent to the corresponding fourth microstrip line.
The utility model discloses a further technical scheme is: the second microstrip line and the fifth microstrip line are positioned on the same side of the first microstrip line, the first microstrip line and the third microstrip line are positioned on different sides of the second microstrip line, the first microstrip line and the fourth microstrip line are positioned on the same side of the fifth microstrip line, the first microstrip line and the fourth microstrip line are parallel, an extension line of the first microstrip line is parallel to the third microstrip line, the second microstrip line, the fifth microstrip line and the first open-circuit microstrip line are parallel to each other, and a central line of the third microstrip line and a central line of the fourth microstrip line are positioned on the same straight line.
The utility model discloses a further technical scheme is: the second impedance converter comprises two identical second resonators, the two second resonators are oppositely arranged and coupled, each second resonator comprises a sixth microstrip line, a seventh microstrip line, an eighth microstrip line, a ninth microstrip line, a tenth microstrip line and a second open-circuit microstrip line, two ends of the sixth microstrip line are respectively connected with one end of the seventh microstrip line and one end of the ninth microstrip line, the other end of the seventh microstrip line is connected with one end of the eighth microstrip line, the other end of the ninth microstrip line is connected with one end of the tenth microstrip line, and one end of the second open-circuit microstrip line is connected with the sixth microstrip line.
The utility model discloses a further technical scheme is: the seventh microstrip line and the ninth microstrip line are located on the same side of the sixth microstrip line, the eighth microstrip line and the sixth microstrip line are located on the same side of the seventh microstrip line, the sixth microstrip line and the tenth microstrip line are located on different sides of the ninth microstrip line, the seventh microstrip line, the second open-circuit microstrip line and the ninth microstrip line are parallel to each other, the sixth microstrip line and the eighth microstrip line are parallel to each other, an extension line of the sixth microstrip line and the tenth microstrip line are parallel to each other, and a center line of the tenth microstrip line and a center line of the eighth microstrip line are located on the same straight line.
The utility model discloses a further technical scheme is: the branch line assembly comprises a first branch line, a second branch line, a third branch line and a fourth branch line, one end of the first branch line is connected with an output port (O/P1), the other end of the first branch line is connected with one end of the second branch line, the other end of the second branch line is connected with one end of the third branch line, the other end of the third branch line is connected with one end of the fourth branch line, and the other end of the fourth branch line is connected with an output port (O/P2).
The utility model discloses a further technical scheme is: the second branch line comprises an eleventh microstrip line, a twelfth microstrip line and a thirteenth microstrip line, two ends of the twelfth microstrip line are respectively connected with one end of the eleventh microstrip line and one end of the thirteenth microstrip line, the eleventh microstrip line and the thirteenth microstrip line are located on different sides of the twelfth microstrip line, and the eleventh microstrip line and the thirteenth microstrip line are parallel to each other in the same plane.
The utility model discloses a further technical scheme is: the third branch line comprises a fourteenth microstrip line, a fifteenth microstrip line and a sixteenth microstrip line, two ends of the fifteenth microstrip line are respectively connected with one end of the fourteenth microstrip line and one end of the sixteenth microstrip line, the fourteenth microstrip line and the sixteenth microstrip line are located on different sides of the fifteenth microstrip line, and the fourteenth microstrip line and the sixteenth microstrip line are parallel in the same plane.
The utility model discloses a further technical scheme is: the short-circuit assembly comprises a short-circuit microstrip line, one end of the short-circuit microstrip line is connected with an input port (I/P), the other end of the short-circuit microstrip line is grounded through a via hole, and the short-circuit microstrip line is positioned between the first impedance converter and the second impedance converter; the open-circuit assembly comprises a third open-circuit microstrip line, and one end of the third open-circuit microstrip line is connected with the joint of the thirteenth microstrip line and the fourteenth microstrip line; the first branch line adopts a seventeenth microstrip line; the fourth branch line adopts a eighteenth microstrip line; the isolation component adopts an isolation resistor, the isolation resistor comprises a resistor R1 and a resistor R2, one end of the resistor R1 is connected with the other end of the first branch line, the other end of the resistor R1 is grounded, one end of the resistor R2 is connected with one end of the fourth branch line, and the other end of the resistor R2 is grounded.
The utility model has the advantages that: compared with the prior art, the utility model has the advantages of as follows:
(1) The second working frequency can be independently adjusted, the structure is simple, and the flexibility is high.
(2) Compared with a mode of cascading a power divider and a filter, the power divider has the advantages that complexity of multi-device combined matching is avoided, the performance of low insertion loss is achieved, the structure is simplified, the size is smaller, the size optimization space is larger, miniaturization of a communication system is facilitated, and the matching difficulty caused by cascading a plurality of devices is reduced.
(3) The advantage that the Gysel power divider is suitable for a high-power scene is reserved, and the signal has frequency selectivity under a dual-frequency band.
(4) The research blank of the unequal power divider in the current double-frequency power divider research is filled, and the device design method under different application scenes is enriched.
(5) The high power ratio of 10 can be realized, the problem that the microstrip line is difficult to process under high impedance is solved through a coupling structure which is convenient to use and adjusts matching impedance, and the microstrip line can be applied to an antenna array needing the high power ratio.
(6) The three transmission zeros are arranged around the passband, so that the signal can be strongly inhibited outside the passband, the performance of the filter is better, and the signal has stronger frequency selectivity.
Drawings
Fig. 1 is a topology structure diagram of a Gysel filter power divider with 10.
Fig. 2 is a schematic diagram of a second impedance converter of the Gysel filter power divider in the case of 10.
Fig. 3 is a schematic diagram of a first impedance converter of the Gysel filter power divider in the case of 10.
Fig. 4 is a first simulation result of transmission characteristics of the dual-frequency Gysel power division filter according to the condition design of 10.
Fig. 5 is a transmission characteristic simulation result two of the dual-frequency Gysel power division filter designed according to the condition of 10.
Detailed Description
As shown in fig. 1-5, the utility model provides a dual-frenquency Gysel merit with high power ratio divides wave filter, the dual-frenquency Gysel merit with high power ratio divides wave filter includes transform subassembly, branch line subassembly, the subassembly that opens a way, short circuit subassembly and isolation assembly, the input of transform subassembly and the input (I/P) of the dual-frenquency Gysel merit with high power ratio branch line subassembly are connected respectively to the one end of short circuit subassembly, the output (O/P1) of the dual-frenquency Gysel merit with high power ratio branch line subassembly is connected respectively to the first output of transform subassembly and the one end of branch line subassembly, the output (O/P2) of the dual-frenquency Gysel merit with high power ratio branch line subassembly is connected respectively to the second output of transform subassembly and the other end of branch line subassembly, the branch line subassembly is connected to the one end of the subassembly of opening a way, the one end of isolation subassembly is connected the branch line subassembly.
The transformation component adjusts the matched impedance by adjusting the coupling strength between the two resonators in the impedance transformer and the length proportion of the port position.
The length of the microstrip line of the dual-frequency Gysel power division filter with the high power division ratio should satisfy a functional expression: (1 + m) theta = pi, so as to ensure that the angle tangent value under the dual-band is unchanged, wherein m is the ratio of two working frequencies, and theta is the length of the microstrip line under the first working frequency. The angle tangent value is a tangent value corresponding to the electrical length theta of the microstrip lines except the impedance transformer in the power division filter at the first operating frequency.
The integrated transformer is composed of two transformers, four common microstrip lines, an open-circuit microstrip line, a short-circuit microstrip line and two grounding isolation resistors. The converter has two characteristics of same operating frequency and 90-degree phase shift, and other branch lines have characteristics of complementary electrical lengths in two frequency bands, namely (1 + m) × theta = pi: wherein, m is the ratio of two working frequencies, and theta is the length of the corresponding microstrip line under the first working frequency.
The transformation component comprises a first impedance transformer and a second impedance transformer which have the same working frequency and 90-degree phase shift, and the input end of the first impedance transformer is connected with the input end of the second impedance transformer.
The converter is mainly divided into two resonators, the two resonators of each converter are completely the same and consist of five microstrip lines with the electrical length of one half wavelength and a central branch open-circuit microstrip line, and the two resonators are coupled and connected through two microstrip lines and are oppositely arranged. The transformer can be matched with different characteristic impedances by adjusting the position of the port and the coupling strength, and can also independently adjust a second frequency operating point and equivalent impedance by adjusting the length of the central branch open-circuit microstrip line. Three transmission zeros are introduced beside the pass band of the transmission characteristic of the converter, so that the frequency selectivity is increased.
The first impedance transformer comprises two identical first resonators 1 and 2, the two first resonators 1 and 2 are oppositely arranged and coupled, the first resonators 1 and 2 comprise a first microstrip line 11, a second microstrip line 12, a third microstrip line 13, a fourth microstrip line 15, a fifth microstrip line 16 and a first open-circuit microstrip line 14, two ends of the first microstrip line 11 are respectively connected with one end of the second microstrip line 12 and one end of the fifth microstrip line 16, the other end of the second microstrip line 12 is connected with one end of the third microstrip line 13, the other end of the fifth microstrip line 16 is connected with one end of the fourth microstrip line 15, one end of the first open-circuit microstrip line 14 is connected with the first microstrip line 11, and the other end of the first open-circuit microstrip line 14 is adjacent to the fourth microstrip line 15.
The lengths of the first open-circuit microstrip line 14 and the microstrip line corresponding to each resonator are obtained according to the ratio of two working frequency points of the power divider, the specific frequency is determined to satisfy the functional expression,
Figure DEST_PATH_GDA0003921687950000091
Figure DEST_PATH_GDA0003921687950000092
wherein L1 is the length of the impedance transformer excluding the center leg and L2 is the length of the center leg, so that a separate adjustment of L2 to adjust the second operating frequency can be achieved after the length of the resonator is fixed.
The second microstrip line 12 and the fifth microstrip line 16 are located on the same side of the first microstrip line 11, the first microstrip line 11 and the third microstrip line 13 are located on different sides of the second microstrip line 12, the first microstrip line 11 and the fourth microstrip line 15 are located on the same side of the fifth microstrip line 16, the first microstrip line 11 is parallel to the fourth microstrip line 15, an extension line of the first microstrip line 11 is parallel to the third microstrip line 13, the second microstrip line 12, the fifth microstrip line 16 and the first open-circuit microstrip line 14 are parallel to each other, and a central line of the third microstrip line 13 and a central line of the fourth microstrip line 15 are located on the same straight line.
The second impedance transformer comprises two identical second resonators 3 and 4, the two second resonators 3 and 4 are oppositely arranged and coupled, the second resonators 3 and 4 comprise a sixth microstrip line 17, a seventh microstrip line 18, an eighth microstrip line 19, a ninth microstrip line 21, a tenth microstrip line 22 and a second open-circuit microstrip line 20, two ends of the sixth microstrip line 17 are respectively connected with one end of the seventh microstrip line 18 and one end of the ninth microstrip line 21, the other end of the seventh microstrip line 18 is connected with one end of the eighth microstrip line 19, the other end of the ninth microstrip line 21 is connected with one end of the tenth microstrip line 22, and one end of the second open-circuit microstrip line 20 is connected with the sixth microstrip line.
The seventh microstrip line 18 and the ninth microstrip line 21 are located on the same side of the sixth microstrip line 17, the eighth microstrip line 19 and the sixth microstrip line 17 are located on the same side of the seventh microstrip line 18, the sixth microstrip line 17 and the tenth microstrip line 22 are located on different sides of the ninth microstrip line, the seventh microstrip line 18, the second open-circuit microstrip line 20 and the ninth microstrip line 21 are parallel to each other, the sixth microstrip line 17 and the eighth microstrip line 19 are parallel to each other, an extension line of the sixth microstrip line 17 is parallel to the tenth microstrip line 22, and a center line of the tenth microstrip line 22 and a center line of the eighth microstrip line 19 are located on the same straight line.
The branch line assembly comprises a first branch line 6, a second branch line 7, a third branch line 8 and a fourth branch line 9, one end of the first branch line 6 is connected with an output port (O/P1), the other end of the first branch line 6 is connected with one end of the second branch line 7, the other end of the second branch line 7 is connected with one end of the third branch line 8, the other end of the third branch line 8 is connected with one end of the fourth branch line 9, and the other end of the fourth branch line 9 is connected with an output port (O/P2).
The second branch line 7 includes an eleventh microstrip line 23, a twelfth microstrip line 24 and a thirteenth microstrip line 25, two ends of the twelfth microstrip line 24 are respectively connected to one end of the eleventh microstrip line 23 and one end of the thirteenth microstrip line 25, the eleventh microstrip line 23 and the thirteenth microstrip line 25 are located on different sides of the twelfth microstrip line 24, and the eleventh microstrip line 23 and the thirteenth microstrip line 25 are parallel in the same plane.
The third branch line 8 includes a fourteenth microstrip line 26, a fifteenth microstrip line 27 and a sixteenth microstrip line 28, two ends of the fifteenth microstrip line 27 are respectively connected to one end of the fourteenth microstrip line 26 and one end of the sixteenth microstrip line 28, the fourteenth microstrip line 26 and the sixteenth microstrip line 28 are located on different sides of the fifteenth microstrip line 27, and the fourteenth microstrip line 26 and the sixteenth microstrip line 28 are parallel to each other in the same plane.
The short-circuit assembly comprises a short-circuit microstrip line 5, one end of the short-circuit microstrip line 5 is connected with an input port (I/P), the other end of the short-circuit microstrip line 5 is grounded through a via hole, and the short-circuit microstrip line 5 is positioned between the first impedance converter and the second impedance converter; the open-circuit assembly comprises a third open-circuit microstrip line 10, and one end of the third open-circuit microstrip line 10 is connected with the connection position of the thirteenth microstrip line 25 and the fourteenth microstrip line 26; the first branch line 6 adopts a seventeenth microstrip line; the fourth branch line 9 adopts an eighteenth microstrip line; the isolation component is an isolation resistor, the isolation resistor comprises a resistor R1 and a resistor R2, one end of the resistor R1 is connected with the other end of the first branch line 6, the other end of the resistor R1 is grounded, one end of the resistor R2 is connected with one end of the fourth branch line 9, and the other end of the resistor R2 is grounded.
In order to ensure that the device still ensures good isolation and matching under the condition of realizing the dual-band filtering power division function fusion design, the isolation part of the traditional Gysel power divider needs to be modified, so that the device can meet the requirement of dual bands. A short-circuit microstrip line and an open-circuit microstrip line are introduced on the basis of an isolation part of a traditional Gysel power divider. The short-circuit microstrip line is positioned between the two converters and the input port and is connected with the ground through the via hole; one end of the open-circuit microstrip line is connected between the microstrip lines 7 and 8. Their characteristic impedance can be obtained by a method of matching one port with two ports, and in order to ensure the same impedance characteristics at different frequencies, the microstrip line electrical length except for the resonator should satisfy the complementary condition, (1 + m) · θ = π: wherein, m is the ratio of two working frequencies, and theta is the length of the corresponding microstrip line under the first working frequency.
The grounding resistor is connected between the microstrip lines 6 and 7, and between the microstrip lines 7 and 9 as an isolation device, and is connected with the ground, and the value of the grounding resistor can be obtained by a port matching method, so that the design enables the power division filter to dissipate heat outside the device when working, and the grounding resistor is suitable for a high-power working scene.
Examples
The structure of the dual-frequency Gysel power division filter with a high power division ratio is shown in FIG. 1, the thickness of the dielectric substrate is 0.508mm, and the relative dielectric constant is 3.55.
Fig. 4 and 5 are simulation results of transmission characteristics of a dual-frequency Gysel power division filter under a 10. In the figure, the horizontal axis represents frequency, and the vertical axis represents transmission characteristics in dB. In fig. 4, S11 represents the input return loss of the double-frequency equal-division Gysel power division filter, S21 and S31 represent the insertion loss from the first output port (O/P1) and the second output port (O/P2) to the input port (I/P) when the input ports (I/P) are matched, respectively, and the simulation result shows that: 10, the Gysel dual-frequency power division filter with the power division ratio of 1 has two working frequency points which are 1.88GHz and 3.03GHz respectively; the input return loss S11 is lower than-15 dB in the passband near the working frequency point, is-18.3 dB at the working frequency point around 1.88GHz, and is-19.1 dB at the working frequency point around 3.03GHz; the value of the insertion loss S21 is-11.3 dB at the working frequency of 1.88GHz, is-11.35 dB at the working frequency of 3.03GHz, and the theoretical value is-10.4 dB; the value of the insertion loss S31 is-1.25 dB at the working frequency of 1.88GHz, is-1.2 dB at the working frequency of 3.03GHz, and the theoretical value is-0.4 dB; the difference between S21 and S31 is 10.05dB at an operating frequency of 1.88GHz and 10.1dB at an operating frequency of 3.03GHz, very close to its theoretical value of 10dB.
And three transmission zeros are shared near the two pass bands, so that the frequency selectivity of the filtering power divider is enhanced. In fig. 5, S22 and S33 represent output return losses of the first output port (O/P1) and the second output port (O/P2), respectively, and S23 represents isolation coefficients of the first output port (O/P1) and the second output port (O/P2). The simulation result shows that: the passband near the two working frequency points is lower than-15 dB, so that the matching of two ports and three ports is realized; the isolation coefficient S23 is lower than-15 dB in the whole pass band near the working frequency point, is-24.2 dB at the working frequency point of 1.88GHz, and is-27.5 dB at the working frequency point of 3.03 GHz.
Simulation results of the embodiment show that the dual-frequency Gysel power division filter under the power division ratio of 10 can realize dual-frequency operation, and the power distribution function and the filtering function of 10.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principles of the present invention should be included within the scope of the present invention.

Claims (10)

1. The dual-frequency Gysel power division filter with the high power division ratio is characterized by comprising a transformation component, a branch component, an open circuit component, a short circuit component and an isolation component, wherein an input end of the transformation component and one end of the short circuit component are respectively connected with an input end (I/P) of the dual-frequency Gysel power division filter with the high power division ratio, a first output end of the transformation component and one end of the branch component are respectively connected with an output end (O/P1) of the dual-frequency Gysel power division filter with the high power division ratio, a second output end of the transformation component and the other end of the branch component are respectively connected with an output end (O/P2) of the dual-frequency Gysel power division filter with the high power division ratio, one end of the open circuit component is connected with the branch component, and one end of the isolation component is connected with the branch component.
2. The dual-frequency Gysel power division filter with high power division ratio as claimed in claim 1, wherein the transforming component comprises a first impedance transformer and a second impedance transformer having 90 ° phase shift at both operating frequencies, and the input terminal of the first impedance transformer is connected to the input terminal of the second impedance transformer.
3. The dual-band Gysel power division filter with a high power division ratio of claim 2, wherein the first impedance transformer comprises two identical first resonators, the two first resonators are oppositely disposed and coupled, the first resonators comprise a first microstrip, a second microstrip, a third microstrip, a fourth microstrip, a fifth microstrip and a first open-circuit microstrip, two ends of the first microstrip are respectively connected to one end of the second microstrip and one end of the fifth microstrip, the other end of the second microstrip is connected to one end of the third microstrip, the other end of the fifth microstrip is connected to one end of the fourth microstrip, one end of the first open-circuit microstrip is connected to the first microstrip, and the other end of the first open-circuit microstrip is adjacent to the fourth microstrip.
4. The dual-band Gysel power division filter with a high power division ratio of claim 3, wherein the second microstrip line and the fifth microstrip line are located on the same side of the first microstrip line, the first microstrip line and the third microstrip line are located on different sides of the second microstrip line, the first microstrip line and the fourth microstrip line are located on the same side of the fifth microstrip line, the first microstrip line and the fourth microstrip line are parallel, an extension line of the first microstrip line is parallel to the third microstrip line, the second microstrip line, the fifth microstrip line and the first open-circuit microstrip line are parallel to each other, and a center line of the third microstrip line and a center line of the fourth microstrip line are located on the same straight line.
5. The dual-band Gysel power-dividing filter with high power-dividing ratio as claimed in claim 4, wherein the second impedance transformer comprises two identical second resonators, the two second resonators are oppositely disposed and coupled, the second resonators comprise a sixth microstrip, a seventh microstrip, an eighth microstrip, a ninth microstrip, a tenth microstrip and a second open-circuit microstrip, two ends of the sixth microstrip are respectively connected to one end of the seventh microstrip and one end of the ninth microstrip, the other end of the seventh microstrip is connected to one end of the eighth microstrip, the other end of the ninth microstrip is connected to one end of the tenth microstrip, and one end of the second open-circuit microstrip is connected to the sixth microstrip.
6. The dual-band Gysel power division filter with a high power division ratio of claim 5, wherein the seventh microstrip line and the ninth microstrip line are located on the same side of the sixth microstrip line, the eighth microstrip line and the sixth microstrip line are located on the same side of the seventh microstrip line, the sixth microstrip line and the tenth microstrip line are located on different sides of the ninth microstrip line, the seventh microstrip line, the second open-circuit microstrip line and the ninth microstrip line are parallel to each other, the sixth microstrip line and the eighth microstrip line are parallel, an extension line of the sixth microstrip line is parallel to the tenth microstrip line, and a center line of the tenth microstrip line and a center line of the eighth microstrip line are located on the same straight line.
7. The dual-band Gysel power division filter with a high power division ratio as claimed in claim 6, wherein the branch line assembly comprises a first branch line, a second branch line, a third branch line and a fourth branch line, one end of the first branch line is connected to an output port (O/P1), the other end of the first branch line is connected to one end of the second branch line, the other end of the second branch line is connected to one end of the third branch line, the other end of the third branch line is connected to one end of the fourth branch line, and the other end of the fourth branch line is connected to an output port (O/P2).
8. The dual-band Gysel power-dividing filter with high power-dividing ratio of claim 7, wherein the second branch line comprises an eleventh microstrip line, a twelfth microstrip line and a thirteenth microstrip line, two ends of the twelfth microstrip line are respectively connected to one end of the eleventh microstrip line and one end of the thirteenth microstrip line, the eleventh microstrip line and the thirteenth microstrip line are located on different sides of the twelfth microstrip line, and the eleventh microstrip line and the thirteenth microstrip line are parallel to each other in the same plane.
9. The dual-band Gysel power-dividing filter with high power-dividing ratio as claimed in claim 8, wherein the third branch line comprises a fourteenth microstrip line, a fifteenth microstrip line and a sixteenth microstrip line, two ends of the fifteenth microstrip line 27 are respectively connected to one end of the fourteenth microstrip line and one end of the sixteenth microstrip line, the fourteenth microstrip line and the sixteenth microstrip line are located on different sides of the fifteenth microstrip line, and the fourteenth microstrip line and the sixteenth microstrip line are parallel to each other in the same plane.
10. The dual-band Gysel power dividing filter with high power dividing ratio as claimed in claim 9, wherein the short-circuit component comprises a short-circuited microstrip line, one end of the short-circuited microstrip line is connected to the input port (I/P), the other end of the short-circuited microstrip line is grounded through a via hole, and the short-circuited microstrip line is located between the first impedance transformer and the second impedance transformer; the open-circuit assembly comprises a third open-circuit microstrip line, and one end of the third open-circuit microstrip line is connected with the joint of the thirteenth microstrip line and the fourteenth microstrip line; the first branch line adopts a seventeenth microstrip line; the fourth branch line adopts a eighteenth microstrip line; the isolation component adopts an isolation resistor, the isolation resistor comprises a resistor R1 and a resistor R2, one end of the resistor R1 is connected with the other end of the first branch line, the other end of the resistor R1 is grounded, one end of the resistor R2 is connected with one end of the fourth branch line, and the other end of the resistor R2 is grounded.
CN202222350829.7U 2022-09-05 2022-09-05 Double-frequency Gysel power division filter with high power division ratio Active CN218101661U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202222350829.7U CN218101661U (en) 2022-09-05 2022-09-05 Double-frequency Gysel power division filter with high power division ratio

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202222350829.7U CN218101661U (en) 2022-09-05 2022-09-05 Double-frequency Gysel power division filter with high power division ratio

Publications (1)

Publication Number Publication Date
CN218101661U true CN218101661U (en) 2022-12-20

Family

ID=84450989

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202222350829.7U Active CN218101661U (en) 2022-09-05 2022-09-05 Double-frequency Gysel power division filter with high power division ratio

Country Status (1)

Country Link
CN (1) CN218101661U (en)

Similar Documents

Publication Publication Date Title
CN103633400B (en) A kind of micro-strip duplexer based on electromagnetism hybrid coupled
CN105098303A (en) Power divider with double-band filter function
CN105514547A (en) Low-pass band-pass five-duplex based on novel frequency separation structure
US7541888B2 (en) Dual band coupled-line balanced-to-unbalanced bandpass filter
CN111384534B (en) Three-way band-pass power division filter
CN114284673B (en) Substrate integrated waveguide dual-band filtering balun
CN111786068A (en) Broadband directional coupler with harmonic suppression function
CN110247145B (en) Bandwidth-adjustable broadband filtering balun with in-band good matching and isolation
CN205159476U (en) Power distribution unit with double frequency -band filtering function
CN111147159A (en) Calibration circuit, calibration network and smart antenna
CN218101661U (en) Double-frequency Gysel power division filter with high power division ratio
CN115313011B (en) Dual-frequency Gysel power dividing filter with high power ratio
CN213717039U (en) Miniaturized low-pass Wilkinson power divider
Tan et al. Tunable couplers: An overview of recently developed couplers with tunable functions
CN205621824U (en) Five multiplexers of low pass - band -pass based on novel frequency separation structure
CN111682292B (en) Four-way power division filter based on four-mode resonator
Konpang et al. An Analysis of High Selectivity and Harmonic Suppression Based on Stepped-Impedance Resonator Structure for Dual-Mode Diplexer
CN115332755B (en) Dual-frequency equal-division Gysel power division filter
CN102569955B (en) Dual-frequency band-pass filter based on asymmetric branch node load resonators
CN218039765U (en) Upper-layer microstrip structure of power division filter and double-frequency equal division Gysel power division filter
CN105529514A (en) Circular-ring multi-mode coupling ultra-wideband micro-strip band-pass filter
CN205488436U (en) Ring multi -mode coupling ultra wide band microstrip band pass filter
CN219873998U (en) Upper layer microstrip structure of filter power divider and novel Gysel filter power divider
JP2015035759A (en) Divider/combiner and stub portion for transmission line having stub
Wang et al. Reconfigurable Bandpass Filter With Multi-Band Switching and Band Shiftability

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant