CN115308518A - Method and system for determining parameter measurement sequence of burn-in circuit - Google Patents
Method and system for determining parameter measurement sequence of burn-in circuit Download PDFInfo
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Abstract
The application relates to the field of electrical performance testing of burn-in circuits, and provides a method and a system for determining a parameter measurement sequence of a burn-in circuit. The method comprises the following steps: at M parameters to be measured
In a sorting mode, acquiring the target failure rate of each parameter to be measured when the measurement sequence of each parameter to be measured is 1, and taking the parameter to be measured with the maximum target failure rate when the measurement sequence is 1 as the 1 st parameter, wherein the 1 st parameter is the parameter of the 1 st in the target sequence; obtaining the target failure rate of each parameter to be measured when the measurement sequence of the parameter to be measured is i, and taking the parameter to be measured with the maximum target failure rate when the measurement sequence is i as the ith parameter, wherein the ith parameter is the parameter of the ith sequence row of the target sequence, and the i takes values in sequence:
. By the method, the problems of long parameter measurement time and low efficiency of the burn-in circuit can be effectively solved.
Description
Technical Field
The present application relates to the field of electrical performance testing of burn-in circuits, and more particularly, to a method and system for determining a parameter measurement sequence of a burn-in circuit.
Background
For a statistically significant number of electronic components, the failure rate may be high at the beginning of operation, which is an early failure of the electronic component. The aging process is to simulate the working conditions of the electronic components, remove the failed components after working for a period of time, so that the electronic components of the batch can pass through the early failure stage and enter the stage with relatively low and stable failure rate.
At present, aging detection and screening are generally performed only on direct current leakage current of electronic components, for example, patent document No. CN 106383275A. However, under the scene with higher screening degree requirement such as aerospace level devices, other characteristics of electronic components need to be considered. If other parameters of the electronic component are also measured, there are problems of long measurement time and low efficiency.
Disclosure of Invention
The inventor of the present application has found through long-term practice that if other parameters of an electronic component are also measured, for example, the four parameters of the electronic component are measured in sequence according to the order of direct current leakage current, capacity, loss angle and equivalent resistance, the failure causes of the electronic component are different from each other, and therefore, the problems of long measurement time and low efficiency exist.
Based on this, the application provides a method for determining a parameter measurement sequence of a burn-in circuit, which includes acquiring a target failure rate of each parameter to be measured when the measurement sequence is 1 in all sequencing modes of the parameters to be measured, and taking the parameter to be measured with the maximum target failure rate when the measurement sequence is 1 as a 1 st parameter, wherein the 1 st parameter is a parameter of which the 1 st parameter is arranged in the target sequence; obtaining parameters to be measured except from the 1 st parameter to the i-1 st parameter, wherein each parameter to be measured has the measurement sequence of iThe measured parameter with the maximum target failure rate when the measurement sequence is i is taken as the ith parameter, wherein the ith parameter is the parameter of the ith target sequence, and i takes values in sequence:
. Therefore, the problems of long parameter measurement time and low efficiency of the burn-in circuit can be effectively solved.
In a first aspect, a method for determining a parameter measurement sequence of a burn-in circuit is provided, the method comprising: at M parameters to be measured
In a sorting mode, acquiring the target failure rate of each parameter to be measured when the measurement sequence of each parameter to be measured is 1, and taking the parameter to be measured with the maximum target failure rate when the measurement sequence is 1 as the 1 st parameter, wherein the 1 st parameter is the parameter of the 1 st in the target sequence; obtaining the target failure rate of each parameter to be measured when the measurement sequence of the parameter to be measured is i, and taking the parameter to be measured with the maximum target failure rate when the measurement sequence is i as the ith parameter, wherein the ith parameter is the parameter of the ith sequence row of the target sequence, and the i takes values in sequence:
。
in a second aspect, a system for determining a parameter measurement sequence of a burn-in circuit is provided, the system comprising: the device comprises a burn-in circuit and a control device, wherein the control device is used for receiving failure information when M parameters to be measured of the burn-in circuit are measured, calculating target failure rate when each parameter to be measured of the burn-in circuit is measured, and determining a parameter measurement sequence of the burn-in circuit by the method.
In summary, the present application has at least the following technical effects:
1. according to the parameter measurement sequence determining method for the burn-in circuit, the parameter to be measured with the largest target failure rate when the measurement sequence is 1 or i is used as the parameter of the 1 st or i th order in all the sorting modes, so that the parameter to be measured which most easily influences the failure of electronic components is placed in front of the device as much as possible for measurement, more failed components are removed first, and when the latter parameter is measured, the number of components needing to be measured is reduced, so that the measurement time is shortened, and the measurement efficiency is improved.
2. The application provides a method for determining parameter measurement sequence of aging circuit, which comprises the following steps of
Sequencing method is used for carrying out sequencing on M parameters to be measured
And measuring, namely taking the maximum value or the average value of the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i as the target failure rate of the parameter to be measured when the measurement sequence is 1 or i. If the actual failure rate of each parameter to be measured is small, errors caused by unreasonable failure rate calculation base numbers of the parameters to be measured in different sequences do not affect the sequence result of parameter measurement, the actual failure rate meeting the requirements is selected from the actual failure rates measured at each time as the target failure rate, the failure influence degree of the parameters to be measured on the electronic components can be embodied into the actual failure rate which is easy to obtain, and the maximum value or the average value is obtained through multiple times of actual measurement to ensure certain accuracy.
3. The application provides a method for determining parameter measurement sequence of aging circuit, which comprises the following steps of
Sequencing M parameters to be tested
Measuring, obtaining the theoretical failure rate of the parameter to be measured according to the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i and the actual failure rates of other parameters to be measured, and respectively taking the maximum value or the average value of the theoretical failure rates as the maximum value or the average valueAnd the target failure rate of the parameter to be measured when the measurement sequence is 1 or i. By using the theoretical failure rate instead of the actual failure rate as the target failure rate, the error caused by unreasonable failure rate calculation base numbers of the parameters to be measured in different sequences is corrected, and the accuracy of judging the failure influence of the parameters to be measured on the electronic components is improved. Furthermore, the error caused by test environment and the like is avoided by taking the maximum value or the average value through multiple times of actual measurement, and certain accuracy is ensured.
4. According to the method for determining the parameter measurement sequence of the aging circuit, M parameters to be measured are measured for 1 time in a preset sorting mode, and the theoretical failure rate of each parameter to be measured in the preset sorting mode is respectively used as the theoretical failure rate of each parameter to be measured in the preset sorting mode
And measuring the target failure rate when the sequence is 1 or i in the sequencing mode. Taking into account errors due to test environment and the like
In each of the sorting modes, the obtained theoretical failure rate of each parameter to be measured is the same, so that the theoretical failure rate of each parameter to be measured in different sorting modes can be replaced by the theoretical failure rate of each parameter to be measured obtained by 1 measurement and calculation. If the value difference of the theoretical failure rate of each parameter to be measured is large, and errors caused by test environments and the like do not influence the parameter measurement sequence result, a mode of only measuring for 1 time is adopted, so that the measurement times can be reduced, the measurement cost is saved, and the measurement efficiency is further improved.
Therefore, the scheme provided by the application can effectively solve the problems of long parameter measurement time and low efficiency of the burn-in circuit.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic diagram illustrating a relation between failure rate and operating time of an electronic component according to an embodiment of the present application;
FIG. 2 is a schematic flowchart of a method for determining a parameter measurement sequence of a burn-in circuit according to embodiment 1 of the present application;
fig. 3 is a block diagram showing a configuration of a parameter measurement order determination system of a burn-in circuit according to embodiment 5 of the present application.
Detailed Description
In order to make the technical solutions of the present application better understood, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Electronic components may have manufacturing defects due to process effects during the manufacturing process. Generally, the failure phenomena of the electronic component can be classified into early failure, random failure and loss failure, as shown in fig. 1, fig. 1 is a schematic diagram of the failure rate of the electronic component as a function of the operating time, where the abscissa is the operating time of the electronic component, the ordinate is the failure rate of the electronic component, 101 is the early failure stage, 102 is the random failure stage, and 103 is the loss failure stage. For the electronic components with statistical significance, if the electronic components are directly used without aging screening, the failure rate is high when the electronic components start to work, which is the early failure of the electronic components. Early failure is caused by manufacturing defects, random failure is occasional in the working process, and loss failure is caused by the fact that electronic components are worn for too long time. Before the electronic components are put into use, the electronic components are effectively aged and screened to screen out unqualified electronic components, so that the electronic components of the batch are subjected to early failure stage, and enter a stage with relatively low and stable failure rate.
At present, aging detection and screening are usually performed only on direct current leakage current of electronic components, but under the scene with higher screening requirements such as aerospace-grade devices, other characteristics of the electronic components need to be considered. If other parameters of the electronic component are also measured, for example, the four parameters of the electronic component are sequentially measured according to the sequence of direct current leakage current, capacity, loss angle and equivalent resistance, and the failure reasons of the electronic component are different, so that the problems of long measurement time and low efficiency exist.
Therefore, in order to solve the above-mentioned drawbacks, in an embodiment of the present application, a method for determining a parameter measurement sequence of a burn-in circuit is provided, where in all sequencing modes of parameters to be measured, a target failure rate of each parameter to be measured is obtained when a measurement sequence is 1, and a parameter to be measured with a maximum target failure rate when the measurement sequence is 1 is taken as a 1 st parameter, where the 1 st parameter is a parameter ranked in the target sequence 1; acquiring target failure rate of each parameter to be measured in a measurement sequence of i from the 1 st parameter to the i-1 st parameter, and taking the parameter to be measured with the maximum target failure rate in the measurement sequence of i as the ith parameter, wherein the ith parameter is the parameter of the ith sequence of the target sequence, and the i takes values in sequence:
. Therefore, the problems of long parameter measurement time and low efficiency of the burn-in circuit can be effectively solved.
The following describes a method for determining a parameter measurement sequence of a burn-in circuit according to the present application.
Example 1
Referring to fig. 2, fig. 2 is a flowchart illustrating a method for determining a parameter measurement sequence of a burn-in circuit according to embodiment 1 of the present application. It should be noted that: the reference numbers to the method steps of the present application are not intended to limit the order thereof, but rather to distinguish the different steps.
The method for determining the parameter measurement sequence of the aging circuit provided by the embodiment 1 can comprise the following steps:
step S110: at M parameters to be measured
In a sorting mode, the target failure rate of each parameter to be measured when the measurement sequence is 1 is obtained from the M parameters to be measured, and the parameter to be measured with the maximum target failure rate when the measurement sequence is 1 is taken as the 1 st parameter, wherein the 1 st parameter is the parameter in the 1 st row of the target sequence.
In the embodiment of the application, the M parameters to be measured
The sort order mode refers to all sort order modes of the M parameters to be tested, and each sort order mode is different from each other.
In the embodiment of the application, the target sequence refers to the sequence of determining and completing the parameter measurement sequence of the aging circuit.
In an exemplary embodiment, the M parameters to be measured are at least two of dc leakage current, capacity, loss angle, and equivalent resistance. Of course, the parameter to be measured may also be other parameters of the electronic component, which is not limited in the present application.
The M parameters to be measured are taken as dc leakage current, capacity and loss angle for example.
In this embodiment, the 3 parameters to be measured have 6 sorting manners in total, and the 6 sorting manners may be:
the 1 st: direct current leakage current, capacitance, loss angle;
the 2 nd: direct current leakage current, loss angle, capacity;
and (3) type: capacity, dc leakage current, loss angle;
and 4, the method comprises the following steps: capacity, loss angle, dc leakage current;
and (5) the following steps: loss angle, dc leakage current, capacity;
the 6 th: loss angle, capacity, dc leakage current.
In this embodiment, the target failure rate of each parameter to be measured when the measurement sequence is 1 in the M parameters to be measured may be:
and determining the measurement sequence of each parameter to be measured in which sequencing mode is 1, for example, the measurement sequence of the direct current leakage current in the 1 st and 2 nd sequencing modes is 1, the measurement sequence of the capacity in the 3 rd and 4 th sequencing modes is 1, and the measurement sequence of the loss angle in the 5 th and 6 th sequencing modes is 1.
And acquiring target failure rates of the direct current leakage current in the 1 st and the 2 nd sequencing modes, acquiring target failure rates of the capacity in the 3 rd and the 4 th sequencing modes, and acquiring target failure rates of the loss angle in the 5 th and the 6 th sequencing modes.
In this embodiment, the parameter to be measured with the maximum target failure rate when the measurement order is 1 may be:
and judging which of the 6 target failure rates is the largest, for example, if the target failure rate of the direct current leakage current is the largest in the 1 st sorting mode or the target failure rate of the direct current leakage current is the largest in the 2 nd sorting mode, the direct current leakage current is taken as the 1 st parameter.
In this embodiment, the target failure rate of each parameter to be measured when the measurement sequence is 1 in the M parameters to be measured may be:
the method comprises the steps of obtaining target failure rates of direct current leakage currents in 1 st or 2 nd sequencing modes, selecting one of the target failure rates as a target failure rate of the direct current leakage currents when a measurement sequence is 1, obtaining target failure rates of capacities in 3 rd or 4 th sequencing modes, selecting one of the target failure rates as a target failure rate of the capacities when the measurement sequence is 1, obtaining target failure rates of loss angles in 5 th or 6 th sequencing modes, and selecting one of the target failure rates as a target failure rate of the loss angles when the measurement sequence is 1.
In this embodiment, the parameter to be measured with the maximum target failure rate when the measurement order is 1 may be the 1 st parameter:
and judging which of the 3 target failure rates is the largest, for example, if the target failure rate of the direct current leakage current in the 1 st sorting mode is the largest, taking the direct current leakage current as the 1 st parameter.
Therefore, the parameter to be measured with the maximum target failure rate can be placed in the 1 st measurement, the most failure components are removed after the 1 st parameter is measured, and the subsequent measurement on other parameters is not carried out on the part of failure components, so that the number of components to be measured is reduced when the later parameter to be measured is measured, the measurement time is shortened, and the measurement efficiency is improved.
Step S120: obtaining the target failure rate of each parameter to be measured when the measurement sequence is i in the parameters to be measured except the 1 st parameter to the i-1 st parameter, and taking the parameter to be measured with the maximum target failure rate when the measurement sequence is i as the ith parameter, wherein the ith parameter is the parameter of the ith row of the target sequence, and i takes the values in sequence:
。
the following description will take M parameters to be measured as dc leakage current, capacitance, and loss angle, and the above 6 sorting manners as examples.
In this embodiment, after the 1 st parameter is determined, let i take the value 2.
In this embodiment, the target failure rate of each parameter to be measured when the measurement sequence is i, in the parameters to be measured except the 1 st parameter to the i-1 st parameter, may be:
if the 1 st parameter is a dc leakage current, the target failure rate of the capacity and the loss angle other than the 1 st parameter is 2 in the measurement order.
Specifically, it is determined in which sort of the parameters to be measured except for the 1 st parameter is the measurement order of 1, for example, the measurement order of the capacity in the 1 st and 6 th sorts of 2, and the measurement order of the loss angle in the 2 nd and 4 th sorts of 2.
And acquiring target failure rates of the capacities in the 1 st and 6 th sequencing modes, and acquiring target failure rates of the loss angles in the 2 nd and 4 th sequencing modes.
In this embodiment, the parameter to be measured with the largest target failure rate when the measurement order is i may be:
the capacity is determined as the 2 nd parameter when the target failure rate of the capacity in the 1 st and 6 th ranking ways and the target failure rate of the loss angle in the 2 nd and 4 th ranking ways are the largest among the 4 target failure rates, for example, when the target failure rate of the capacity in the 1 st ranking way is the largest or the target failure rate of the capacity in the 6 th ranking way is the largest.
In this embodiment, the target failure rate of each parameter to be measured when the measurement sequence is i, in the parameters to be measured except the 1 st parameter to the i-1 st parameter, may be:
and acquiring target failure rates of the capacities in the 1 st or 6 th sequencing modes, selecting one of the target failure rates as a target failure rate of the capacity when the measurement sequence is 2, acquiring target failure rates of the loss angles in the 2 nd or 4 th sequencing modes, and selecting one of the target failure rates as a target failure rate of the loss angles when the measurement sequence is 1.
In this embodiment, the parameter to be measured with the largest target failure rate when the measurement order is i may be:
the method determines which of the 2 target failure rates is the largest, for example, if the target failure rate of the capacity in the 1 st ranking is the largest, the capacity is set as the 2 nd parameter.
If M is 3, after the 1 st parameter and the 2 nd parameter are determined, only 1 parameter to be measured remains, so that the last 1 parameter to be measured can be directly determined as the 3 rd parameter.
If M is 4, after the 1 st parameter and the 2 nd parameter are determined, the value of i is set to be 3, and the process is repeated to obtain the 3 rd parameter. After the 1 st parameter, the 2 nd parameter and the 3 rd parameter are determined, the last 1 parameter to be measured can be directly determined as the 4 th parameter.
Therefore, the parameters to be measured which most easily influence the failure of the electronic components are placed in front for measurement as much as possible, more failed components are removed firstly, and when the parameters at the back are measured, the number of the components needing to be measured is reduced, so that the measurement time is shortened, and the measurement efficiency is improved.
Example 2
On the basis of embodiment 1, the present application, embodiment 2, also provides a method for determining a parameter measurement sequence of a burn-in circuit.
The method for determining the parameter measurement sequence of the burn-in circuit provided in embodiment 2 includes: to be provided with
Sequencing method is used for carrying out sequencing on M parameters to be measured
And measuring, namely acquiring the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i, and respectively taking the maximum value or the average value of the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i as the target failure rate of the parameter to be measured when the measurement sequence is 1 or i, wherein the actual failure rate is the ratio of the number of failed components to the total number of the components when the parameter to be measured is measured.
At present, the failure condition of an electronic component is usually counted by using the actual failure rate, which means that M parameters to be measured of a batch of electronic components are measured, wherein the ratio of the number of failed components to the total number of the batch of components.
The following description will be given by taking M parameters to be measured as dc leakage current, capacitance, and loss angle as examples, and taking 6 sorting manners of dc leakage current, capacitance, and loss angle in embodiment 1 as examples.
In this embodiment, 3 parameters to be measured are measured 6 times in 6 sorting ways, so that the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i is obtained through actual measurement.
In this embodiment, the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i may be:
and determining the measurement sequence of each parameter to be measured in which sequencing mode is 1, for example, the measurement sequence of the direct current leakage current in the 1 st and 2 nd sequencing modes is 1, the measurement sequence of the capacity in the 3 rd and 4 th sequencing modes is 1, and the measurement sequence of the loss angle in the 5 th and 6 th sequencing modes is 1.
In the 1 st and 2 nd sorting modes, the ratio of the number of the components which fail when the direct current leakage current is measured to the total number of the components is calculated, so that the actual failure rate of the direct current leakage current when the measurement sequence is 1 is obtained.
In the 3 rd and 4 th sorting manners, the ratio of the number of failed components to the total number of the batch of components when the capacity is measured is calculated, so as to obtain the actual failure rate of the capacity when the measurement sequence is 1.
In the 5 th and 6 th sorting modes, the ratio of the number of the failed components to the total number of the batch of components when the loss angle is measured is calculated, so as to obtain the actual failure rate of the loss angle when the measurement sequence is 1.
Similarly, determining a measurement sequence of each parameter to be measured in which sequencing mode is 2, and obtaining an actual failure rate of the direct current leakage current when the measurement sequence is 2, an actual failure rate of the capacity when the measurement sequence is 2, and an actual failure rate of the loss angle when the measurement sequence is 2.
Similarly, determining the measurement sequence of each parameter to be measured in which sequencing mode is 3, and obtaining the actual failure rate of the direct current leakage current when the measurement sequence is 3, the actual failure rate of the capacity when the measurement sequence is 3, and the actual failure rate of the loss angle when the measurement sequence is 3.
In this embodiment, the maximum value or the average value of the actual failure rate of each parameter to be measured when the measurement order is 1 or i is taken as the target failure rate of the parameter to be measured when the measurement order is 1 or i, respectively, and may be:
and taking the maximum value or the average value of the 2 actual failure rates as the target failure rate of the direct current leakage current when the measurement sequence is 1.
The actual failure rate of the capacity when the measurement sequence is 1, that is, the actual failure rate of the capacity in the 3 rd and 4 th sorting manners, and the maximum value or the average value of the 2 actual failure rates is taken as the target failure rate of the capacity when the measurement sequence is 1.
The actual failure rate of the loss angle when the measurement sequence is 1, that is, the actual failure rate of the capacity in the 5 th and 6 th sorting manners, and the maximum value or the average value of the 2 actual failure rates is taken as the target failure rate of the loss angle when the measurement sequence is 1.
Similarly, the maximum value or the average value of the actual failure rates of the dc leakage current, the capacitance, and the loss angle in the order of measurement 2 is defined as the target failure rate of the dc leakage current, the capacitance, and the loss angle in the order of measurement 2.
Similarly, the maximum value or the average value of the actual failure rates of the dc leakage current, the capacitance, and the loss angle in the measurement order of 3 is defined as the target failure rate of the dc leakage current, the capacitance, and the loss angle in the measurement order of 3.
In this embodiment of the present application, not only the maximum value or the average value in the actual failure rate may be used as the target failure rate, but also a mode value or a median value in the actual failure rate may be used as the target failure rate, and a value obtained by performing other processing on at least one actual failure rate may be used as the target failure rate, which is not limited in this application.
In the embodiment of the application, when the actual failure rate of each parameter to be measured is small, errors caused by unreasonable failure rate calculation base numbers of the parameters to be measured in different sequences do not affect the result of the parameter measurement sequence, and the actual failure rate can be used as the target failure rate.
In the embodiment of the present application, taking M parameters to be measured as dc leakage current and capacity as an example for explanation, an error is caused by unreasonable failure rate calculation bases of the parameters to be measured in different sequences, which means that:
there are 2 sorting modes for the 2 parameters to be measured, and the 2 sorting modes are respectively as follows:
the 1 st: direct current leakage current, capacity;
the 2 nd: capacity, dc leakage current.
In this embodiment, when 100 components are measured in the order of 1 st, if the number of failed components is 5 when measuring the dc leakage current, the actual failure rate of the dc leakage current is 5%, and if the number of failed components is 10 when measuring the capacity, the actual failure rate of the capacity is 10%.
In practice, among 5 components that fail due to a dc leakage current, there may be components that fail due to capacity.
In calculating the actual failure rate of the capacity, the numerator is the number of components that fail due to the capacity, 10, and the denominator (i.e., the number of calculations) is the total number of components, 100.
It can be seen that, in calculating the actual failure rate of the capacitance, the numerator does not consider the capacitance-related failed components that may exist in the 5 components failed by the dc leakage current, and the denominator (i.e., the calculation base) considers the 5 components failed by the dc leakage current.
Therefore, since the measurement sequence of the dc leakage current and the capacitance is different, the calculation base number of the actual failure rate of the dc leakage current and the capacitance is not reasonable, and an error may be caused.
In the embodiment of the present application, when the actual failure rate of each parameter to be measured is small, the error caused by unreasonable failure rate calculation bases of the parameters to be measured in different sequences does not affect the result of the sequence of parameter measurement, which means that:
taking M parameters to be measured as dc leakage current and capacity as an example, in this embodiment, M is 2, and in the jth sorting manner of the 2 sorting manners, the actual failure rate of the parameter to be measured with the measurement sequence of 1 is
The actual failure rate of the parameter to be measured with the measurement sequence of 1 is
And in this sort, the smaller value is
Then when
When the temperature of the water is higher than the set temperature,
or when
In the process, errors caused by unreasonable failure rate calculation bases of the parameters to be measured in different sequences do not influence the sequence result of parameter measurement.
If the value of M is large, when the actual failure rate of each parameter to be measured is small, the number of components which have failed in the previous measurement is small, the influence on the calculation base number of the actual failure rate of the parameter to be measured in the subsequent measurement is not large, and the error caused by unreasonable calculation base number cannot influence the parameter measurement sequence result. Therefore, in this case, the actual failure rate may be set as the target failure rate.
The embodiment of the application provides a method for determining parameter measurement sequence of aging circuit, so as to
Sequencing method is used for carrying out sequencing on M parameters to be measured
And measuring, namely taking the maximum value or the average value of the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i as the target failure rate of the parameter to be measured when the measurement sequence is 1 or i. If the actual failure rate of each parameter to be measured is small, errors caused by unreasonable failure rate calculation base numbers of the parameters to be measured in different sequences do not affect the sequence result of parameter measurement, and the actual failure rate meeting the requirement is selected from the actual failure rates measured at each time as the target failure rate, so that the parameters to be measured can be applied to the electronic componentsThe failure influence degree is embodied as the actual failure rate which is easy to obtain, and a certain accuracy is ensured by taking the maximum value or the average value through multiple times of actual measurement.
Example 3
On the basis of embodiment 1 and embodiment 2, the embodiment 3 of the present application further provides a method for determining the parameter measurement sequence of the aging circuit.
The method for determining the parameter measurement sequence of the burn-in circuit provided in embodiment 3 includes:
to be provided with
Sequencing M parameters to be tested
Measuring, namely respectively acquiring the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i;
respectively obtaining the theoretical failure rate of each parameter to be measured when the measurement sequence is 1 or i according to the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i and the actual failure rates of other parameters to be measured, and respectively taking the maximum value or the average value of the theoretical failure rates of each parameter to be measured when the measurement sequence is 1 or i as the target failure rate of the parameter to be measured when the measurement sequence is 1 or i, wherein the actual failure rate is the ratio of the number of failed components to the total number of components when the parameter to be measured is measured.
In the embodiment of the present application, if the actual failure rate of at least one parameter to be measured is large, an error caused by unreasonable failure rate calculation bases of the parameters to be measured in different sequences may be large, and a result of a parameter measurement sequence may be affected.
The theoretical failure rate is used as the target failure rate instead of the actual failure rate, and errors caused by unreasonable failure rate calculation bases of the parameters to be measured in different sequences can be corrected.
Specifically, embodiment 3 may include the following sub-steps S111 to S115. It should be noted that: the reference numbers to the method steps of the present application are not intended to limit the order thereof, but rather to distinguish the different steps.
Substep S111: for M parameters to be measured
At the parameter to be measured
In all the sorting modes with the measurement sequence of 1, respectively obtaining the parameters to be measured
Actual failure rate of, and parameters to be measured
The value of the theoretical failure rate is equal to the value of the actual failure rate, and the parameter to be measured
The maximum value or the average value of the theoretical failure rate when the measurement sequence is 1 is taken as the parameter to be measured
Target failure rate at measurement order 1.
The M parameters to be measured are taken as dc leakage current, capacity and loss angle for explanation.
In this embodiment, the 3 parameters to be measured have 6 sorting manners in total, and the 6 sorting manners may be:
the 1 st: direct current leakage current, capacitance, loss angle;
the 2 nd: direct current leakage current, loss angle, capacity;
and (3) a step of: capacity, dc leakage current, loss angle;
and 4, the method comprises the following steps: capacity, loss angle, dc leakage current;
the 5 th: loss angle, dc leakage current, capacity;
the 6 th: loss angle, capacity, dc leakage current.
In this embodiment, if
For the loss angle, the parameter to be measured
All the sorting modes with the measurement sequence of 1 include a 5 th sorting mode and a 6 th sorting mode.
Due to the fact that
The measurement sequence of (1) is calculated
The problem of unreasonable calculation base number does not exist during actual failure rate, so that the parameters to be measured
The value of the theoretical failure rate of (a) is equal to the value of the actual failure rate.
The maximum value or the average value of the theoretical failure rates of the loss angles in the 5 th sorting mode and the 6 th sorting mode is used as the target failure rate of the loss angles when the measurement sequence is 1, and the maximum value or the average value is obtained through multiple times of actual measurement to avoid errors caused by test environments and the like, so that certain accuracy is ensured.
Substep S112: at the parameter to be measured
In all the sorting modes with the measurement sequence of 1, the parameters to be measured are obtained in the mode of S111
And comparing the parameter to be measured with the theoretical failure rate
Respectively taking the maximum value or the average value of the theoretical failure rates when the measurement sequence is 1 as the parameters to be measured
The target failure rate was measured for a sequence of 1.
The dc leakage current, capacitance, loss angle, and their sorting in substep S111 of example 3 will be described as examples.
And obtaining the theoretical failure rates of the direct current leakage currents in the 1 st sorting mode and the 2 nd sorting mode in the mode of the substep S111, and taking the maximum value or the average value of the theoretical failure rates of the direct current leakage currents as the target failure rate when the measurement sequence of the direct current leakage currents is 1.
And acquiring the theoretical failure rates of the capacity in the 3 rd sorting mode and the 4 th sorting mode in the mode of the substep S111, and taking the maximum value or the average value of the theoretical failure rates of the capacity as the target failure rate when the capacity measurement sequence is 1.
Substep S113: if at the point
In the jth sorting mode of the sorting modes, the parameters to be measured
If the measurement sequence is k, the parameter to be measured is obtained
Actual failure rate of
According to
Obtaining the parameters to be measured
Theoretical failure rate of
The parameters to be measured are measured
Theoretical failure rate in jth ordering
As the parameter to be measured
One of the theoretical failure rates at a measurement order of i = k, where q is the order designation,
。
the dc leakage current, capacitance, loss angle, and their sorting method in the substep S111 of embodiment 3 will be described as examples.
In this embodiment, the parameter to be measured
The jth sorting mode is the 3 rd sorting mode for the DC leakage current, and the parameters to be measured
K =2.
In calculating the actual failure rate of the dc leakage current, the numerator does not consider the components that may fail due to the dc leakage current among the components that fail due to the capacity, and the denominator (i.e., the calculation base number) considers the components that fail due to the capacity.
In order to make the numerator and denominator agree, the computational base is changed to not account for components that fail due to capacity.
Specifically, if the total number of components is N, the number of components failing due to capacity is N
The number of components which fail when measuring the DC leakage current is
Theoretical failure rate of DC leakage current
。
Substep S114: order to
At the parameter to be measured
In all sorting modes with the measurement sequence of i = k, the parameters to be measured are respectively acquired in the mode of S113
The theoretical failure rate of the measuring device, the parameter to be measured
The maximum value or the average value of the theoretical failure rate when the measurement sequence is i = k is taken as the parameter to be measured
When the measurement sequence is i = k, k takes values in sequence:
。
the dc leakage current, capacitance, loss angle, and their sorting in substep S113 of embodiment 3 will be described as examples.
Parameter to be measured
That is, all the sorting modes of the dc leakage current whose measurement sequence is i =2 include the 3 rd sorting mode and the 5 th sorting mode, and the maximum value or the average value of the theoretical failure rates of the dc leakage current in the 2 sorting modes is obtained as the target failure rate of the dc leakage current when the measurement sequence is i =2.
Let the jth sort mode be the 4 th sort modeParameter to be measured
K =3.
In calculating the actual failure rate of the dc leakage current, the numerator does not consider the components that may fail due to the dc leakage current among the components that fail due to the capacitance and the loss angle, and the denominator (i.e., the calculation base) considers the components that fail due to the capacitance and the loss angle.
In order to make the numerator and denominator identical, the calculation base is changed to not take into account components that fail due to capacity and loss angle.
Specifically, if the total number of components is N, the number of components that fail due to capacitance and loss angle is N
The number of components which fail when measuring the DC leakage current is
Theoretical failure rate of DC leakage current
。
All the sorting modes with the measurement sequence of i =3 of the direct current leakage current include a 4 th sorting mode and a 6 th sorting mode, and a maximum value or an average value of theoretical failure rates of the direct current leakage current in the 2 sorting modes is obtained and is used as a target failure rate of the direct current leakage current when the measurement sequence is i =3.
Substep S115: at the parameter to be measured
In all sorting modes with the measurement sequence of i = k, the parameters to be measured are respectively obtained in the modes of S113 and S114
And comparing the parameter to be measured with the theoretical failure rate
The maximum value or the average value of the theoretical failure rate when the measurement sequence is i = k respectively is taken as the parameter to be measured
Target failure rate at measurement order i = k.
The dc leakage current, capacitance, loss angle, and their sorting in substep S113 of embodiment 3 will be described as examples.
All the sorting modes with the capacity measurement sequence of i =2 include the 1 st sorting mode and the 6 th sorting mode, and the maximum value or the average value of the theoretical failure rates of the capacities in the 2 sorting modes is obtained as the target failure rate of the capacity when the measurement sequence is i =2.
All the sorting modes with the capacity measurement sequence of i =3 include the 2 nd sorting mode and the 5 th sorting mode, and the maximum value or the average value of the theoretical failure rates of the capacities in the 2 sorting modes is obtained as the target failure rate of the capacity when the measurement sequence is i =3.
All the sorting modes with the loss angle measurement sequence of i =2 comprise a 2 nd sorting mode and a 4 th sorting mode, and the maximum value or the average value of the theoretical failure rates of the loss angles in the 2 sorting modes is obtained and used as the target failure rate of the loss angles when the measurement sequence is i =2.
All the sequencing modes with the loss angle measurement sequence of i =3 include the 1 st sequencing mode and the 3 rd sequencing mode, and the maximum value or the average value of the theoretical failure rates of the loss angles in the 2 sequencing modes is obtained and used as the target failure rate of the loss angles when the measurement sequence is i =3.
In this embodiment of the present application, not only the maximum value or the average value in the theoretical failure rates may be used as the target failure rate, but also a mode value or a median value in the theoretical failure rates may be used as the target failure rate, and a value obtained by performing other processing on at least one theoretical failure rate may be used as the target failure rate, which is not limited in this application.
Practice of the present applicationExample provided a method for determining parameter measurement sequence of burn-in circuit, to
Sequencing M parameters to be tested
And measuring, namely obtaining the theoretical failure rate of each parameter to be measured according to the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i and the actual failure rates of other parameters to be measured, and taking the maximum value or the average value of the theoretical failure rates as the target failure rates of the parameters to be measured when the measurement sequence is 1 or i respectively. By using the theoretical failure rate to replace the actual failure rate as the target failure rate, errors caused by unreasonable failure rate calculation base numbers of the parameters to be detected in different sequences are corrected, and the accuracy of judging the failure influence of the parameters to be detected on the electronic components is improved. Furthermore, the maximum value or the average value is obtained through multiple times of actual measurement, so that errors caused by test environments and the like are avoided, and certain accuracy is guaranteed.
Example 4
On the basis of embodiment 1, embodiment 2 and embodiment 3, embodiment 4 of the present application further provides a method for determining a parameter measurement sequence of a burn-in circuit.
The method for determining the parameter measurement sequence of the burn-in circuit provided in embodiment 4 includes:
measuring the M parameters to be measured for 1 time in a preset sorting mode to obtain the theoretical failure rate of each parameter to be measured in the preset sorting mode, and respectively taking the theoretical failure rate of each parameter to be measured in the preset sorting mode as each parameter to be measured
The target failure rate when the measurement sequence is 1 or i in the sorting mode, wherein the preset sorting mode is that
The theory of each parameter to be measured in a preset sorting modeThe failure rate is obtained by actual failure rate of all parameters to be measured in a preset sorting mode, and the actual failure rate is the ratio of the number of failed components to the total number of the components when the parameters to be measured are measured.
In the embodiment of the present application, when the error due to the test environment or the like is not considered, the method is adopted
The theoretical failure rate of each parameter to be measured obtained by each sequencing mode in the sequencing modes is the same. In reality, the difference in test environment may cause errors in the value of the theoretical failure rate at each test measurement. However, if the value difference of the theoretical failure rate of each parameter to be measured is large, and the error brought by the test environment and the like does not affect the parameter measurement sequence result, the theoretical failure rate of each parameter to be measured obtained by measuring and calculating 1 time can be used to replace the theoretical failure rate of each parameter to be measured in different sorting modes without considering the error brought by the test environment and the like, so as to improve the measurement efficiency.
Specifically, embodiment 3 may include the following substeps S116 to substep S118. It should be noted that: the reference numbers to the method steps of the present application are not intended to limit the order thereof, but rather to distinguish the different steps.
Substep S116: for M parameters to be measured
If in the jth sorting mode, the parameters to be tested
If the measurement sequence is 1, the parameter to be measured is obtained
Actual failure rate of
And the parameters to be measured
Theoretical failure rate of (2)
To be measured
Theoretical failure rate of (2)
As the parameter to be measured
In the above-mentioned
And measuring the target failure rate when the sequence is 1 or i in the sequencing mode.
The M parameters to be measured are taken as dc leakage current, capacity and loss angle for example.
In this embodiment, the 3 parameters to be measured have 6 sorting manners in total, and the 6 sorting manners may be:
the 1 st: direct current leakage current, capacity, loss angle;
the 2 nd: direct current leakage current, loss angle, capacity;
and (3) a step of: capacity, dc leakage current, loss angle;
and 4, the method comprises the following steps: capacity, loss angle, dc leakage current;
and (5) the following steps: loss angle, dc leakage current, capacity;
the 6 th: loss angle, capacity, dc leakage current.
In this embodiment, the j-th sorting manner may be any one of the 6 sorting manners. For example, the jth ordering may be the 5 th ordering,
is the loss angle.
Due to the fact that
The measurement sequence of (1) is in the calculation
The problem of unreasonable calculation base number does not exist during actual failure rate, so that the parameters to be measured
Is equal to the value of the actual failure rate.
The theoretical failure rate of the loss angle in the 5 th ranking mode is taken as the target failure rate when the loss angle is measured in the 6 ranking modes in the order of 1, 2 or 3.
Substep S117: if in the jth sorting mode, the parameters to be measured
If the measurement sequence is k, the parameter to be measured is obtained
Actual failure rate of
According to
Obtaining the parameters to be measured
Theoretical failure rate of
The parameter to be measured
Theoretical failure rate of
As the parameter to be measured
In the above-mentioned
Measuring the target failure rate with the sequence of 1 or i in the sorting mode, wherein q is a sequence index,
。
the dc leakage current, capacitance, loss angle, and their sequence in substep S116 of example 4 will be described as an example.
In this embodiment, the jth ordering may be the 5 th ordering,
for the dc leakage current, the theoretical failure rate of the dc leakage current was obtained in the same manner as the theoretical failure rate obtained in example 3
And taking the theoretical failure rate of the direct current leakage current in the 5 th sequencing mode as the target failure rate of the direct current leakage current when the sequence is 1, 2 or 3 under the 6 sequencing modes.
Substep S118: respectively obtaining the parameters to be measured in the manner of the S117
The theoretical failure rate in the j sorting mode and the parameter to be measured
The theoretical failure rates in the j sorting mode are respectively used as the parameters to be measured
In the above-mentioned
And measuring the target failure rate when the sequence is 1 or i in the sequencing mode.
The dc leakage current, capacitance, loss angle, and their sequence in substep S116 of example 4 will be described as an example.
In this embodiment, the jth ordering may be the 5 th ordering,
for capacity, the theoretical failure rate of capacity was obtained in the same manner as the theoretical failure rate obtained in example 3
And the theoretical failure rate of the capacity in the 5 th ranking mode is used as the target failure rate when the capacity is measured in the 6 ranking modes in the order of 1, 2 or 3.
The method for determining the parameter measurement sequence of the burn-in circuit provided by the embodiment of the application measures M parameters to be measured 1 time in a preset sorting mode, and respectively uses the theoretical failure rate of each parameter to be measured in the preset sorting mode as the theoretical failure rate of each parameter to be measured in each parameter to be measured
And measuring the target failure rate when the sequence is 1 or i in the sequencing mode. Taking into account errors due to test environment and the like
The theoretical failure rate of each parameter to be measured obtained in each sorting mode in the sorting modes is the same, so that the theoretical failure rate of each parameter to be measured in different sorting modes can be replaced by the theoretical failure rate of each parameter to be measured obtained by 1-time measurement and calculation. If the value difference of the theoretical failure rate of each parameter to be measured is large, and errors caused by test environments and the like do not influence the parameter measurement sequence result, a mode of only measuring for 1 time is adopted, so that the measurement times can be reduced, the measurement cost is saved, and the measurement efficiency is further improved.
Example 5
Referring to fig. 3, fig. 3 is a block diagram illustrating a system for determining a parameter measurement sequence of a burn-in circuit according to embodiment 5 of the present application. The parameter measurement order determination system 300 for a burn-in circuit in the present application may include: a burn-in circuit 310 and a control device 320.
The control device 320 is configured to receive failure information when measuring M parameters to be measured of the burn-in circuit 310, calculate a target failure rate when measuring each parameter to be measured of the burn-in circuit 310, and determine a parameter measurement sequence of the burn-in circuit 310 by using the method in any one of the above method embodiments.
As an optional implementation manner, the detection device detects a failure condition of the component when measuring the M parameters to be measured of the burn-in circuit 310, and the control device 320 receives failure information, which is sent by the detection device, when measuring the M parameters to be measured of the burn-in circuit 310.
As another alternative, a detection device is disposed in the control device 320, and the control device 320 detects a component failure condition when the M parameters to be measured of the aging circuit 310 are measured by the detection device.
Claims (10)
1. A method for determining a parameter measurement sequence of a burn-in circuit, the method comprising:
s110. At M parameters to be measured
In a sorting mode, acquiring the target failure rate of each parameter to be measured when the measurement sequence of each parameter to be measured is 1, and taking the parameter to be measured with the maximum target failure rate when the measurement sequence is 1 as a 1 st parameter, wherein the 1 st parameter is a parameter arranged in the 1 st order of the target sequence;
s120, obtaining the target failure rate of each parameter to be measured when the measurement sequence of the parameter to be measured is i in the parameters to be measured except the parameters from 1 st to i-1 st, and taking the parameter to be measured with the maximum target failure rate when the measurement sequence is i as the ith parameter, wherein the ith parameter is the targetAnd (3) marking the parameter of the ith in sequence, wherein i sequentially takes values:
。
2. the method for determining the parameter measurement sequence of the burn-in circuit according to claim 1, wherein the target failure rate of each parameter to be measured when the measurement sequence is 1 or i is obtained by:
with the said
The M parameters to be measured are processed by a sorting mode
And measuring, namely acquiring the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i, and respectively taking the maximum value or the average value of the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i as the target failure rate of the parameter to be measured when the measurement sequence is 1 or i, wherein the actual failure rate is the ratio of the number of failed components to the total number of the components when the parameter to be measured is measured.
3. The method for determining the parameter measurement sequence of the aging circuit as claimed in claim 1, wherein the method for obtaining the target failure rate of each parameter to be measured when the measurement sequence is 1 or i comprises:
with the said
The M parameters to be tested are processed by a sorting mode
Measuring, namely respectively acquiring the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i;
respectively obtaining the theoretical failure rate of each parameter to be measured when the measurement sequence is 1 or i according to the actual failure rate of each parameter to be measured when the measurement sequence is 1 or i and the actual failure rates of other parameters to be measured, and respectively taking the maximum value or the average value of the theoretical failure rates of each parameter to be measured when the measurement sequence is 1 or i as the target failure rate of the parameter to be measured when the measurement sequence is 1 or i, wherein the actual failure rate is the ratio of the number of failed components to the total number of components when the parameter to be measured is measured.
4. The method for determining the parameter measurement sequence of the aging circuit as claimed in claim 3, wherein the method for obtaining the target failure rate of each parameter to be measured when the measurement sequence is 1 comprises:
s111, for the M parameters to be measured
At the parameter to be measured
In all sorting modes with the measurement sequence of 1, respectively obtaining the parameters to be measured
Actual failure rate of, and the parameter to be measured
The value of the theoretical failure rate is equal to the value of the actual failure rate, and the parameter to be measured is measured
The maximum value or the average value of the theoretical failure rate when the measurement sequence is 1 is taken as the parameter to be measured
A target failure rate when the measurement order is 1;
s112, parameters to be measured
In all the sorting modes with the measurement sequence of 1, the parameters to be measured are obtained in the mode of S111
And comparing the parameter to be measured with the theoretical failure rate of
The maximum value or the average value of the theoretical failure rate when the measurement sequence is 1 respectively serves as the parameter to be measured
The target failure rate was measured for a sequence of 1.
5. The method for determining the parameter measurement sequence of the aging circuit according to claim 4, wherein the target failure rate of each parameter to be measured when the measurement sequence is i is obtained by:
s113, if the
In the jth sorting mode of the sorting modes, the parameters to be measured
If the measurement sequence is k, the parameter to be measured is obtained
Actual failure rate of
According to
Obtaining the parameters to be measured
Theoretical failure rate of
The parameter to be measured
Theoretical failure rate in jth ordering
As the parameter to be measured
One of the theoretical failure rates at measurement order i = k, where q is the order designation,
；
s114. Order
At the parameter to be measured
In all sorting modes with the measurement sequence of i = k, the parameters to be measured are respectively acquired in the mode of S113
The theoretical failure rate of (2) is obtained by calculating the parameter to be measured
The maximum value or the average value of the theoretical failure rate when the measurement sequence is i = k is taken as the parameter to be measured
When the measurement sequence is i = k, k takes values in sequence:
；
s115, measuring parameters
In all sorting modes with the measurement sequence of i = k, the parameters to be measured are respectively obtained in the modes of S113 and S114
And comparing the parameter to be measured with the theoretical failure rate of
The maximum value or the average value of the theoretical failure rate when the measurement sequence is i = k respectively serves as the parameter to be measured
Target failure rate at measurement order i = k.
6. The method for determining the parameter measurement sequence of the aging circuit as claimed in claim 1, wherein the method for obtaining the target failure rate of each parameter to be measured when the measurement sequence is 1 or i comprises:
measuring the M parameters to be measured for 1 time in a preset sorting mode to obtain the theoretical failure rate of each parameter to be measured in the preset sorting mode, and respectively using the theoretical failure rate of each parameter to be measured in the preset sorting mode as each parameter to be measured
The target failure rate when the measurement sequence is 1 or i under the various sorting modes, wherein the preset sorting mode is that
And in the sorting mode, the theoretical failure rate of each parameter to be measured in the preset sorting mode is obtained from the actual failure rate of all the parameters to be measured in the preset sorting mode, and the actual failure rate is the ratio of the number of failed components to the total number of components when the parameters to be measured are measured.
7. The method of claim 6, wherein if the predetermined ordering is the parameter measurement order of the aging circuit
The jth sorting mode in the sorting modes is that the parameters to be measured with the measurement sequence of 1 in the preset sorting mode are measured in the sequence of 1
The method for acquiring the target failure rate when the measurement sequence is 1 or i in the sorting mode comprises the following steps:
s116, for the M parameters to be measured
If in the jth sorting mode, the parameter to be measured
Is 1, the parameter to be measured is obtained
Actual failure rate of
And the parameter to be measured
Theoretical failure rate of (2)
The parameter to be measured
Theoretical failure rate of
As the parameter to be measured
In the above-mentioned
And measuring the target failure rate when the sequence is 1 or i in the sequencing mode.
8. The method as claimed in claim 7, wherein the predetermined sorting pattern is a pattern in which the parameters to be measured are measured in k order
The method for acquiring the target failure rate when the measurement sequence is 1 or i in the sorting mode comprises the following steps:
s117. If in the jth sorting mode, the parameters to be measured
If the measurement sequence is k, the parameter to be measured is obtained
Actual failure rate of
According to
Obtaining the parameters to be measured
Theoretical failure rate of (2)
The parameter to be measured
Theoretical failure rate of
As the parameter to be measured
In the above-mentioned
Measuring the target failure rate with the sequence of 1 or i in the sorting mode, wherein q is a sequence index,
；
s118, respectively obtaining the parameters to be measured in the mode of S117
The theoretical failure rate in the j sorting mode and the parameter to be measured
The theoretical failure rates in the jth sorting mode are respectively used as the parameters to be measured
In the above-mentioned
And measuring the target failure rate when the sequence is 1 or i in the sequencing mode.
9. The method according to claim 1, wherein the M parameters to be measured are at least two of dc leakage current, capacity, loss angle, and equivalent resistance.
10. A system for determining a sequence of measurements of a parameter of a burn-in circuit, comprising:
a burn-in circuit;
a control device for receiving failure information when measuring M parameters under test of the burn-in circuit, for calculating a target failure rate when measuring each parameter under test of the burn-in circuit, and for determining a parameter measurement sequence of the burn-in circuit in the method of any one of claims 1 to 9.
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Address after: 311100 Building 13, No. 25, Xianxing Road, Xianlin Street, Yuhang District, Hangzhou, Zhejiang Patentee after: Hangzhou Sanhai Electronic Technology Co.,Ltd. Address before: 311100 Building 13, No. 25, Xianxing Road, Xianlin Street, Yuhang District, Hangzhou, Zhejiang Patentee before: HANGZHOU SANHAI ELECTRONICS Co.,Ltd. |