CN115304291A - Method for processing through hole on glass substrate - Google Patents
Method for processing through hole on glass substrate Download PDFInfo
- Publication number
- CN115304291A CN115304291A CN202211108996.9A CN202211108996A CN115304291A CN 115304291 A CN115304291 A CN 115304291A CN 202211108996 A CN202211108996 A CN 202211108996A CN 115304291 A CN115304291 A CN 115304291A
- Authority
- CN
- China
- Prior art keywords
- hole
- glass substrate
- reaction
- processing
- protective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
Abstract
The invention provides a method for processing a through hole on a glass substrate, which comprises the following steps: providing a glass substrate with a through hole, wherein a protective layer is arranged in a region of the glass substrate where the through hole is not formed; putting the glass substrate into a reaction kettle; and introducing reaction gas into the reaction kettle, and reacting the reaction gas with the glass at the through hole within preset time. Therefore, the processing method repairs areas such as the inner part of the through hole aperture and the like through the reaction gas, and can increase the inner diameter of the through hole under the condition of ensuring that the outer diameter of the through hole is not rapidly enlarged, so as to improve the maximum ratio of the inner diameter to the outer diameter of the through hole, thereby improving the performance of the glass substrate.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a method for processing through holes in a glass substrate.
Background
A Mini/Micro-LED (Mini/Micro-Light Emitting Diode) backlight is a novel display industry focus, cu is electroplated and sputtered on the front side and the back side of a glass substrate through a coating technology, then a line and a non-line are exposed and developed, and the non-line area is etched through an etching process to obtain the substrate with the double-sided dense Cu line.
The Mini/Micro-LED has the advantages of self-luminescence, high efficiency, low power consumption, high brightness, high stability, long service life and the like, has obtained relevant application in the fields of display, optical communication, indoor positioning, biology and medical treatment, is expected to be further expanded to a plurality of fields of wearable/implantable devices, augmented reality/virtual reality, vehicle-mounted display, ultra-large display, optical communication/optical interconnection, medical detection, intelligent vehicle lamps, space imaging and the like, and has definite and objective market prospect.
When the glass substrate of the Mini/Micro-LED is manufactured, micron-sized through holes which are vertical up and down need to be manufactured on the glass substrate so as to be filled with conductive substances, so that up-and-down conduction is realized, and the application range of the glass substrate is enlarged.
However, most of the current through-hole processes are laser processing to form through-holes on a substrate.
Disclosure of Invention
In view of the above, in order to solve the above problems, the present invention provides a method for processing a through hole on a glass substrate, which comprises the following steps:
a method of processing a via hole in a glass substrate, the method comprising:
providing a glass substrate with a through hole, wherein a protective layer is arranged in a region of the glass substrate where the through hole is not formed;
putting the glass substrate into a reaction kettle;
and introducing reaction gas into the reaction kettle, and reacting the reaction gas with the glass at the through hole within preset time.
Preferably, in the above processing method, the providing a glass substrate having a through hole, and a region of the glass substrate where the through hole is not formed being provided with a protective layer, includes:
providing a glass substrate;
forming a through hole on the glass substrate in a laser drilling mode;
and arranging a protective layer on the glass substrate in the region where the through hole is not formed.
Preferably, in the above processing method, the protective layer is a photoresist protective layer.
Preferably, in the above processing method, after placing the glass substrate in a reaction vessel, the processing method further comprises:
and vacuumizing the reaction kettle.
Preferably, in the above treatment method, the pressure in the reaction vessel after the vacuum pumping treatment is completed is less than 100Pa.
Preferably, in the above treatment method, the reaction gas is a mixed gas of carbon tetrafluoride, oxygen, and an inert gas.
Preferably, in the above treatment method, the ratio of the molar ratio of carbon tetrafluoride to the molar ratio of oxygen is 16.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a method for processing a through hole on a glass substrate, which comprises the following steps: providing a glass substrate with a through hole, wherein a protective layer is arranged in a region of the glass substrate where the through hole is not formed; putting the glass substrate into a reaction kettle; and introducing reaction gas into the reaction kettle, and reacting the reaction gas with the glass at the through hole within preset time. Therefore, the processing method repairs areas such as the inner part of the through hole aperture and the like through the reaction gas, and can increase the inner diameter of the through hole under the condition of ensuring that the outer diameter of the through hole is not rapidly enlarged, so as to improve the maximum ratio of the inner diameter to the outer diameter of the through hole, thereby improving the performance of the glass substrate.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of a via hole after laser drilling in the prior art;
FIG. 2 is a schematic flow chart illustrating a method for processing a via hole in a glass substrate according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a glass substrate with a through-hole processed according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart illustrating another method for processing a via hole in a glass substrate according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart illustrating a method for processing a via hole in a glass substrate according to another embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a comparison between a through hole before repair and a through hole after repair according to an embodiment of the present invention;
fig. 7 is a schematic diagram illustrating comparison between a through hole before repair and a through hole after repair according to another embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Based on the content recorded in the background art, most of the through hole processes are to form through holes on a substrate in a laser processing mode, and the principle of laser processing is to melt glass at high energy, so that the problems of rough inner part of the through hole diameter, insufficient brightness and the like can be caused; further, referring to fig. 1, fig. 1 is a schematic cross-sectional view of a through hole after laser drilling in the prior art, and due to the particularity of the laser drilling principle, as shown in fig. 1, the maximum ratio of the inner diameter to the outer diameter of the through hole which can be processed by a glass substrate with a fixed thickness has a corresponding extreme value, so that the performance of the glass substrate is greatly limited.
The embodiment of the invention provides a method for processing a through hole on a glass substrate, which is used for repairing areas such as the inner part of the aperture of the through hole and the like, and increasing the inner diameter of the through hole under the condition of ensuring that the outer diameter of the through hole is not rapidly enlarged, so that the maximum ratio of the inner diameter to the outer diameter of the through hole is increased, and the performance of the glass substrate is improved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 2, fig. 2 is a schematic flow chart illustrating a method for processing a through hole on a glass substrate according to an embodiment of the present invention.
The processing method comprises the following steps:
s101: providing a glass substrate with a through hole, wherein a protective layer is arranged in the region of the glass substrate where the through hole is not formed.
S102: and putting the glass substrate into a reaction kettle.
S103: and introducing reaction gas into the reaction kettle, and reacting the reaction gas with the glass at the through hole within preset time.
Specifically, in the embodiment of the invention, the protective layer is arranged in the area of the glass substrate where the through hole is not formed, so that the reaction gas is prevented from reacting with the glass in the area of the glass substrate where the through hole is not formed, the reaction gas is only allowed to react with the glass at the through hole, and the inside of the aperture of the through hole is smooth, so that the brightness of the glass is improved.
Further, referring to fig. 3, fig. 3 is a schematic cross-sectional view of a glass substrate with a processed through hole according to an embodiment of the present invention, and it can be seen from fig. 1 and fig. 3 that the inner diameter of the through hole can be increased by controlling the reaction time of the reaction gas and the glass at the through hole, and the outer diameter of the through hole cannot be rapidly increased due to the existence of the protective layer, and it should be noted that fig. 3 illustrates that the inner diameter and the outer diameter of the through hole are the same.
Therefore, the processing method provided by the embodiment of the invention repairs the areas such as the inner part of the aperture of the through hole and the like through the reaction gas, and can increase the inner diameter of the through hole under the condition of ensuring that the outer diameter of the through hole is not rapidly enlarged, so as to improve the maximum ratio of the inner diameter to the outer diameter of the through hole, thereby improving the performance of the glass substrate.
Optionally, in another embodiment of the present invention, referring to fig. 4, fig. 4 is a schematic flowchart of another method for processing a through hole on a glass substrate according to an embodiment of the present invention.
Step S101, providing a glass substrate having a through hole, where a protection layer is disposed in a region of the glass substrate where the through hole is not formed, and specifically, the protection layer may be:
s1011: a glass substrate is provided.
S1012: and forming a through hole on the glass substrate by adopting a laser drilling mode.
S1013: and arranging a protective layer on the glass substrate in the region where the through hole is not formed.
Specifically, in the embodiment of the present invention, the protective layer includes, but is not limited to, a photoresist protective layer, and only needs to ensure that the protective layer does not react with the reaction gas, or ensure that the reaction speed of the protective layer with the reaction gas is far less than the reaction speed of the reaction gas with the glass.
In the embodiment of the present invention, only the photoresist protection layer is taken as an example for description, and under the protection effect, the method for removing the photoresist protection layer is also simpler, and no glue is left on the glass substrate.
Optionally, in another embodiment of the present invention, referring to fig. 5, fig. 5 is a schematic flow chart of another method for processing a through hole on a glass substrate according to an embodiment of the present invention.
After the step S102 of placing the glass substrate in a reaction vessel, the processing method further includes:
s104: and vacuumizing the reaction kettle.
Specifically, in the embodiment of the invention, the reaction kettle is vacuumized, so that the pressure in the reaction kettle is less than 100Pa after the vacuumization is finished, the reaction environment of the reaction kettle is optimized, and the reaction effect of the reaction gas and the glass at the through hole is further improved.
Optionally, in the embodiment of the present invention, the reaction gas is a mixed gas of carbon tetrafluoride, oxygen and an inert gas, wherein a ratio of a molar ratio of the carbon tetrafluoride to a molar ratio of the oxygen is 16 to 1.
It should be noted that the inert gas includes, but is not limited to, other inert gases such as helium, the inert gas does not participate in the reaction, the reaction rate of the reaction gas and the glass at the through hole is controlled only by the content of the inert gas, and the ratio (molar ratio) of carbon tetrafluoride to oxygen is 19:1, the proportion of inert gas in the mixed gas is 0-100%, when the proportion of inert gas in the mixed gas is 0%, the mixed gas is the mixed gas of carbon tetrafluoride and oxygen, and the reaction rate of the reaction gas and the glass at the through hole is fastest at the moment; when the ratio of the inert gas in the mixed gas is 100%, that is, the mixed gas is entirely inert gas, no reaction is performed.
Therefore, the reaction rate of the reaction gas and the glass at the through hole can be controlled by controlling the proportion of the inert gas in the mixed gas, and the repairing effect of the reaction gas on the areas such as the inner part of the aperture of the through hole is improved by optimizing various parameters, so that the inner diameter of the through hole is increased under the condition of ensuring that the outer diameter of the through hole is not rapidly enlarged, and the maximum ratio of the inner diameter to the outer diameter of the through hole is further improved, and the performance of the glass substrate is improved.
Referring to fig. 6, fig. 6 is a schematic diagram illustrating comparison between before and after repairing a through hole according to an embodiment of the present invention, and as shown in fig. 6, after the through hole on the glass substrate is processed by the method for processing a through hole according to an embodiment of the present invention, the areas inside the through hole aperture and the like are better repaired.
Referring to fig. 7, fig. 7 is a schematic diagram illustrating a comparison between a through hole before repair and a through hole after repair according to another embodiment of the present invention, as shown in fig. 7, before repair, the through hole has an outer diameter of 0.288mm, an inner diameter of 0.089mm, and an inner diameter to outer diameter ratio of about 0.309; after the treatment method of the through hole on the glass substrate provided by the embodiment of the invention is used for treating, the outer diameter of the through hole is 0.289mm, the inner diameter of the through hole is 0.105mm or 0.103mm, and the ratio of the inner diameter to the outer diameter is about 0.363.
Therefore, the processing method repairs the areas such as the inner part of the through hole aperture and the like through the reaction gas, and can increase the inner diameter of the through hole under the condition of ensuring that the outer diameter of the through hole is not rapidly enlarged, and further increase the maximum ratio of the inner diameter to the outer diameter of the through hole, thereby improving the performance of the glass substrate.
The method for processing the through hole on the glass substrate provided by the invention is described in detail above, and the principle and the embodiment of the invention are explained in the present document by applying specific examples, and the description of the above examples is only used to help understanding the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A method for processing a through hole on a glass substrate is characterized by comprising the following steps:
providing a glass substrate with a through hole, wherein a protective layer is arranged in a region of the glass substrate where the through hole is not formed;
putting the glass substrate into a reaction kettle;
and introducing reaction gas into the reaction kettle, and reacting the reaction gas with the glass at the through hole within preset time.
2. The processing method according to claim 1, wherein the providing a glass substrate having a through hole, and a region of the glass substrate where the through hole is not formed is provided with a protective layer, comprises:
providing a glass substrate;
forming a through hole on the glass substrate in a laser drilling mode;
and arranging a protective layer on the glass substrate in the region where the through hole is not formed.
3. The processing method of claim 1, wherein the protective layer is a photoresist protective layer.
4. The processing method according to claim 1, wherein after placing the glass substrate in a reaction vessel, the processing method further comprises:
and vacuumizing the reaction kettle.
5. The process of claim 4, wherein the pressure in the reaction vessel after the evacuation is less than 100Pa.
6. The process of claim 1, wherein the reaction gas is a mixture of carbon tetrafluoride, oxygen and an inert gas.
7. The process according to claim 6, wherein the ratio of the molar ratio of carbon tetrafluoride to the molar ratio of oxygen is from 16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211108996.9A CN115304291A (en) | 2022-09-13 | 2022-09-13 | Method for processing through hole on glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211108996.9A CN115304291A (en) | 2022-09-13 | 2022-09-13 | Method for processing through hole on glass substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115304291A true CN115304291A (en) | 2022-11-08 |
Family
ID=83865909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211108996.9A Pending CN115304291A (en) | 2022-09-13 | 2022-09-13 | Method for processing through hole on glass substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115304291A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2687535B2 (en) * | 1989-01-10 | 1997-12-08 | 三菱電機株式会社 | Method of processing holes by energy beam |
| CN106535480A (en) * | 2016-11-18 | 2017-03-22 | 江门崇达电路技术有限公司 | Multilayer PCB positive back etching process |
| CN113611602A (en) * | 2021-07-29 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | Etching method |
| CN114096056A (en) * | 2021-12-06 | 2022-02-25 | 福莱盈电子股份有限公司 | Method for manufacturing PCB (printed Circuit Board) by using glass plate |
| CN114206003A (en) * | 2021-11-16 | 2022-03-18 | 龙南骏亚电子科技有限公司 | Glue removing method for copper deposition process of circuit board |
| CN114804644A (en) * | 2022-04-07 | 2022-07-29 | 凯盛科技股份有限公司 | Through hole method of glass substrate for Mini-LED backlight plate |
-
2022
- 2022-09-13 CN CN202211108996.9A patent/CN115304291A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2687535B2 (en) * | 1989-01-10 | 1997-12-08 | 三菱電機株式会社 | Method of processing holes by energy beam |
| CN106535480A (en) * | 2016-11-18 | 2017-03-22 | 江门崇达电路技术有限公司 | Multilayer PCB positive back etching process |
| CN113611602A (en) * | 2021-07-29 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | Etching method |
| CN114206003A (en) * | 2021-11-16 | 2022-03-18 | 龙南骏亚电子科技有限公司 | Glue removing method for copper deposition process of circuit board |
| CN114096056A (en) * | 2021-12-06 | 2022-02-25 | 福莱盈电子股份有限公司 | Method for manufacturing PCB (printed Circuit Board) by using glass plate |
| CN114804644A (en) * | 2022-04-07 | 2022-07-29 | 凯盛科技股份有限公司 | Through hole method of glass substrate for Mini-LED backlight plate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103390703B (en) | The preparation method of low-damage and high-density film and there is the LED chip of this film | |
| CN107507927B (en) | The production method of flexible display apparatus | |
| KR20140143131A (en) | Flexible substrate and manufacturing method thereof, oled display device | |
| US9982360B2 (en) | Method for transfering a graphene layer | |
| CN115304291A (en) | Method for processing through hole on glass substrate | |
| CN1128893C (en) | Corrosion apparatus | |
| EP1619277A3 (en) | Process for making a structure having at least one precisely positioned zone of one or several semiconductor nanocrystals | |
| CN105405948B (en) | Preparation method, LED chip and the light emitting diode of transparent conductive layer | |
| JP3039278B2 (en) | Method for manufacturing arc tube for discharge bulb | |
| KR100829677B1 (en) | Fluorescent lamp, back light unit, and method of manufacturing the fluorescent lamp | |
| JPH0794483A (en) | Plasma etching method | |
| JP5248766B2 (en) | Electrode member set for cold cathode fluorescent lamp | |
| JP3811051B2 (en) | Manufacturing method of discharge lamp | |
| CN105261685B (en) | Preparation method, LED chip and the light emitting diode of transparent conductive layer | |
| CN103500804A (en) | Thin film, production method thereof and light-emitting display device | |
| JP2006286448A (en) | External electrode type fluorescent lamp, backlight unit, and manufacturing method of external electrode type fluorescent lamp | |
| CN102163668A (en) | Manufacturing method of AlGaInP light-emitting diode | |
| CN101447380B (en) | Method for manufacturing plane surface medium resistance discharging light source | |
| TWI258042B (en) | Fluorescent lamp and manufacturing method thereof | |
| JP2010073330A (en) | Mercury-free arc tube for discharge lamp device, and method of manufacturing the arc tube | |
| JPH07192690A (en) | Fluorescent tube and manufacturing method thereof | |
| CN107180733B (en) | Method for recycling cathode assembly | |
| CN110289344B (en) | Method for forming passivation protection layer, light emitting diode and manufacturing method thereof | |
| TW429473B (en) | Method for forming dielectric layer with capability to resist the diffusion of copper | |
| JPH08162068A (en) | Low power type metal halide lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |