CN115295569A - 摄像元件及摄像装置 - Google Patents
摄像元件及摄像装置 Download PDFInfo
- Publication number
- CN115295569A CN115295569A CN202211045472.XA CN202211045472A CN115295569A CN 115295569 A CN115295569 A CN 115295569A CN 202211045472 A CN202211045472 A CN 202211045472A CN 115295569 A CN115295569 A CN 115295569A
- Authority
- CN
- China
- Prior art keywords
- light
- region
- photoelectric conversion
- image pickup
- microlens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 122
- 238000006243 chemical reaction Methods 0.000 claims description 76
- 230000003287 optical effect Effects 0.000 claims description 53
- 238000003860 storage Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 abstract description 85
- 238000003384 imaging method Methods 0.000 description 122
- 102100040678 Programmed cell death protein 1 Human genes 0.000 description 113
- 238000012986 modification Methods 0.000 description 36
- 230000004048 modification Effects 0.000 description 36
- 238000009792 diffusion process Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 19
- 238000000926 separation method Methods 0.000 description 17
- 230000000875 corresponding effect Effects 0.000 description 13
- 230000003321 amplification Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 238000003199 nucleic acid amplification method Methods 0.000 description 12
- 238000005286 illumination Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000006870 function Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 101710089372 Programmed cell death protein 1 Proteins 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015195347 | 2015-09-30 | ||
JP2015-195347 | 2015-09-30 | ||
PCT/JP2016/078278 WO2017057277A1 (ja) | 2015-09-30 | 2016-09-26 | 撮像素子および撮像装置 |
CN201680057084.XA CN108174619B (zh) | 2015-09-30 | 2016-09-26 | 摄像元件及摄像装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680057084.XA Division CN108174619B (zh) | 2015-09-30 | 2016-09-26 | 摄像元件及摄像装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115295569A true CN115295569A (zh) | 2022-11-04 |
Family
ID=58427557
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202211045472.XA Pending CN115295569A (zh) | 2015-09-30 | 2016-09-26 | 摄像元件及摄像装置 |
CN201680057084.XA Active CN108174619B (zh) | 2015-09-30 | 2016-09-26 | 摄像元件及摄像装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680057084.XA Active CN108174619B (zh) | 2015-09-30 | 2016-09-26 | 摄像元件及摄像装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20180294300A1 (ko) |
EP (1) | EP3358620A4 (ko) |
JP (3) | JPWO2017057277A1 (ko) |
KR (4) | KR102623653B1 (ko) |
CN (2) | CN115295569A (ko) |
WO (1) | WO2017057277A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107615010B (zh) * | 2016-01-22 | 2021-11-16 | 索尼公司 | 光接收器件、控制方法和电子设备 |
JP6700811B2 (ja) * | 2016-01-26 | 2020-05-27 | キヤノン株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018060980A (ja) * | 2016-10-07 | 2018-04-12 | キヤノン株式会社 | 撮像表示装置及びウェアラブルデバイス |
CN109033913A (zh) * | 2018-07-25 | 2018-12-18 | 维沃移动通信有限公司 | 一种识别码的识别方法及移动终端 |
KR20210049103A (ko) | 2018-09-11 | 2021-05-04 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자 |
WO2020105713A1 (ja) * | 2018-11-21 | 2020-05-28 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
JP2022086611A (ja) * | 2020-11-30 | 2022-06-09 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及びその製造方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3799304A (en) | 1972-10-30 | 1974-03-26 | Twin Disc Inc | Hydraulic control system for power transmission having a modulated friction clutch |
JPS5547260U (ko) | 1978-09-26 | 1980-03-27 | ||
JP2004304105A (ja) * | 2003-04-01 | 2004-10-28 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
JP4341421B2 (ja) * | 2004-02-04 | 2009-10-07 | ソニー株式会社 | 固体撮像装置 |
JP2005303081A (ja) * | 2004-04-13 | 2005-10-27 | Matsushita Electric Ind Co Ltd | 光センサーおよび固体撮像装置 |
JP2006344754A (ja) * | 2005-06-08 | 2006-12-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
JP2007201047A (ja) * | 2006-01-25 | 2007-08-09 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
US7781715B2 (en) * | 2006-09-20 | 2010-08-24 | Fujifilm Corporation | Backside illuminated imaging device, semiconductor substrate, imaging apparatus and method for manufacturing backside illuminated imaging device |
JP4649390B2 (ja) * | 2006-09-20 | 2011-03-09 | 富士フイルム株式会社 | 裏面照射型撮像素子の製造方法 |
JP4798232B2 (ja) * | 2009-02-10 | 2011-10-19 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
JP4816768B2 (ja) | 2009-06-22 | 2011-11-16 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
KR101776955B1 (ko) * | 2009-02-10 | 2017-09-08 | 소니 주식회사 | 고체 촬상 장치와 그 제조 방법, 및 전자 기기 |
US9543356B2 (en) * | 2009-03-10 | 2017-01-10 | Globalfoundries Inc. | Pixel sensor cell including light shield |
KR101590146B1 (ko) * | 2010-08-24 | 2016-02-01 | 후지필름 가부시키가이샤 | 고체 촬상 장치 |
JP2012156310A (ja) * | 2011-01-26 | 2012-08-16 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
JP5810551B2 (ja) * | 2011-02-25 | 2015-11-11 | ソニー株式会社 | 固体撮像装置、および、その製造方法、電子機器 |
JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
JP5794068B2 (ja) * | 2011-09-16 | 2015-10-14 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
JP2013098446A (ja) * | 2011-11-04 | 2013-05-20 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、及び、電子機器 |
TW201334169A (zh) * | 2012-02-10 | 2013-08-16 | Sony Corp | 攝像元件、製造裝置及方法、及攝像裝置 |
JP6065448B2 (ja) * | 2012-08-03 | 2017-01-25 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
JP5547260B2 (ja) | 2012-10-22 | 2014-07-09 | 株式会社東芝 | 固体撮像装置 |
JP2014096490A (ja) * | 2012-11-09 | 2014-05-22 | Sony Corp | 撮像素子、製造方法 |
US8773562B1 (en) * | 2013-01-31 | 2014-07-08 | Apple Inc. | Vertically stacked image sensor |
JP2015012126A (ja) * | 2013-06-28 | 2015-01-19 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
US9356061B2 (en) * | 2013-08-05 | 2016-05-31 | Apple Inc. | Image sensor with buried light shield and vertical gate |
JP2015065270A (ja) * | 2013-09-25 | 2015-04-09 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
JP2015095468A (ja) * | 2013-11-08 | 2015-05-18 | ソニー株式会社 | 固体撮像素子および固体撮像素子の製造方法、並びに電子機器 |
JP6196911B2 (ja) * | 2014-02-05 | 2017-09-13 | オリンパス株式会社 | 固体撮像装置および撮像装置 |
KR102154184B1 (ko) * | 2014-03-10 | 2020-09-09 | 삼성전자 주식회사 | 이미지 센서 및 이를 제조하는 방법 |
KR102363433B1 (ko) * | 2015-01-15 | 2022-02-16 | 삼성전자주식회사 | 이미지 센서 |
JPWO2017057278A1 (ja) * | 2015-09-30 | 2018-07-26 | 株式会社ニコン | 撮像素子および撮像装置 |
-
2016
- 2016-09-26 KR KR1020237001097A patent/KR102623653B1/ko active IP Right Grant
- 2016-09-26 US US15/764,419 patent/US20180294300A1/en not_active Abandoned
- 2016-09-26 WO PCT/JP2016/078278 patent/WO2017057277A1/ja active Application Filing
- 2016-09-26 CN CN202211045472.XA patent/CN115295569A/zh active Pending
- 2016-09-26 KR KR1020247000327A patent/KR20240010528A/ko not_active Application Discontinuation
- 2016-09-26 CN CN201680057084.XA patent/CN108174619B/zh active Active
- 2016-09-26 KR KR1020207036799A patent/KR102488709B1/ko active IP Right Grant
- 2016-09-26 EP EP16851448.7A patent/EP3358620A4/en active Pending
- 2016-09-26 JP JP2017543259A patent/JPWO2017057277A1/ja active Pending
- 2016-09-26 KR KR1020187009049A patent/KR20180048900A/ko active Application Filing
-
2020
- 2020-11-25 JP JP2020195228A patent/JP7383597B2/ja active Active
-
2021
- 2021-09-24 US US17/484,275 patent/US20220085220A1/en active Pending
-
2022
- 2022-11-16 JP JP2022183147A patent/JP2023017991A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US20220085220A1 (en) | 2022-03-17 |
KR102488709B1 (ko) | 2023-01-13 |
JPWO2017057277A1 (ja) | 2018-07-26 |
US20180294300A1 (en) | 2018-10-11 |
KR20240010528A (ko) | 2024-01-23 |
JP7383597B2 (ja) | 2023-11-20 |
JP2023017991A (ja) | 2023-02-07 |
KR102623653B1 (ko) | 2024-01-10 |
EP3358620A4 (en) | 2019-04-24 |
JP2021044572A (ja) | 2021-03-18 |
WO2017057277A1 (ja) | 2017-04-06 |
KR20230009533A (ko) | 2023-01-17 |
KR20200145850A (ko) | 2020-12-30 |
EP3358620A1 (en) | 2018-08-08 |
CN108174619A (zh) | 2018-06-15 |
CN108174619B (zh) | 2022-09-20 |
KR20180048900A (ko) | 2018-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108174619B (zh) | 摄像元件及摄像装置 | |
US8835981B2 (en) | Solid-state image sensor | |
KR102586247B1 (ko) | 고체 촬상 장치, 촬상 장치 | |
US9584744B2 (en) | Image sensors with voltage-biased trench isolation structures | |
KR20180006623A (ko) | 고체 촬상 장치 및 전자 기기 | |
JP4751865B2 (ja) | 裏面照射型固体撮像素子及びその製造方法 | |
KR102225297B1 (ko) | 촬상 소자 및 촬상 장치 | |
US11784202B2 (en) | Image sensor | |
KR20180044963A (ko) | 촬상 소자 및 촬상 장치 | |
KR100769563B1 (ko) | 누설 전류를 감소시킨 이미지 센서 | |
WO2024101028A1 (ja) | 光検出装置及び電子機器 | |
US20220139993A1 (en) | Image sensor and image processing device including the same | |
US20230133670A1 (en) | Image sensing device | |
JP2024070699A (ja) | 光検出装置及び電子機器 | |
CN117133783A (zh) | 图像传感器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |