CN115290953B - Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof - Google Patents
Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof Download PDFInfo
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- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 claims description 3
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- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 3
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
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- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052697 platinum Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
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- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 claims 1
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- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses a self-driven mechanical signal sensor based on a dynamic diode and a preparation method thereof, wherein the self-driven mechanical signal sensor comprises a layered structure arranged in a package, the layered structure comprises a semiconductor layer, an insulating layer and a gap layer arranged between the semiconductor layer and the insulating layer, metal electrodes are arranged on the semiconductor layer and the insulating layer, and the metal electrodes are led out of the package through leads; the invention uses the potential difference between the metal and the semiconductor, under the input of broadband mechanical signals, high-energy hot electrons are excited, and the high-energy hot electrons are transmitted through the insulating layer to form the same-frequency electric signals for output. The flexible self-driven sensor based on the semiconductor/insulating layer/metal dynamic diode has the advantages of wide frequency spectrum, high voltage, flexibility, long service life and the like, and can keep good performance in extreme environments (sea, land and air). In addition, the self-driven sensor is simple in structure, low in cost and compatible with the existing integrated circuit technology, so that the self-driven sensor can be popularized and used on a large scale.
Description
Technical Field
The present invention relates to a self-driven sensor and a method for manufacturing the same, and more particularly, to a self-driven mechanical signal sensor based on a dynamic diode and a method for manufacturing the same.
Background
Today, with the search of more coordinates on the earth by humans, self-driven sensing devices in extreme environments have been driven, and there is a great need for an integrable semiconductor sensing chip to provide powerful guarantee for further searching the earth and even the universe. However, the current self-driven sensor has low integration level, and the semiconductor-based broadband mechanical vibration sensor still has a large upgrading space. For a long time, the academia and industry are searching for a reliable solution to integrate a wide frequency mechanical signal into an existing electrical signal system. The main device model is a device based on piezoelectric effect, and the main principle is to output by utilizing charge displacement fixed in a material body, so that the problems are obvious, namely, higher device internal resistance and lower limit response amplitude. There is therefore a great need for a conductive current sensor that can respond quickly and accurately to a wide frequency, broad range of mechanical signals.
Therefore, we design a semiconductor/insulator/metal based conduction current dynamic diode, which can accurately and rapidly convert the wide-frequency mechanical signal input into the same-frequency electrical signal output through the physical processes of hot electron transition, rebound and in-vivo transport. The invention uses the potential difference between the metal and the semiconductor, under the input of broadband mechanical signals, high-energy hot electrons are excited, after the interface bounces, the transition forms the same-frequency electric signal output through the insulating layer, and the invention breaks through the fixed mode that the insulating material cannot conduct current in the traditional thinking. The flexible self-driven sensor based on the semiconductor/insulating layer/metal dynamic diode has the advantages of wide frequency spectrum, high voltage, flexibility, long service life and the like, and can keep good performance in extreme environments (sea, land and air).
Disclosure of Invention
The invention aims to provide a novel mechanical signal sensor and a preparation method thereof, wherein the sensor is a self-driven mechanical signal sensor based on a dynamic diode, can realize the same-frequency electric signal output under the input of broadband mechanical signals, and has quick response.
The invention adopts the technical scheme that:
The self-driven mechanical signal sensor based on the dynamic diode comprises a layered structure arranged in a package, wherein the layered structure comprises a semiconductor layer, an insulating layer and a gap layer arranged between the semiconductor layer and the insulating layer, metal electrodes are arranged on the semiconductor layer and the insulating layer, and the metal electrodes are led out of the package through leads; the sensor converts external mechanical signal input into same-frequency electric signal output by utilizing a hot electron transition, rebound and transport mechanism in a dynamic diode through dynamic contact and separation between a semiconductor layer and an insulating layer.
Further, the semiconductor layer is one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum diselenide and tungsten disulfide.
Further, the insulating layer is one of insulating materials such as fluoroethylene propylene copolymer (FEP), polyvinylidene fluoride (PVDF), teflon (PTFE), hafnium oxide, titanium oxide, gallium nitride, lithium niobate, aluminum oxide and the like.
Further, the electrode on the insulating layer is any one or more of gold, silver, copper, aluminum, platinum and iron which can form a film.
Further, the electrode on the semiconductor layer is one or more of gold, palladium, silver, titanium, chromium and nickel.
Further, the package is a flexible package.
Further, the thickness of the void layer is preferably not less than 10nm.
The method for preparing the self-driven mechanical signal sensor based on the dynamic diode comprises the following steps: after preparing the back electrode on the semiconductor layer, cleaning the surface and drying the surface; manufacturing a metal film electrode on the insulating layer; the insulating layer and the semiconductor layer are flexibly packaged, so that a gap layer is formed between the semiconductor layer and the insulating layer; the electrodes are led out of the flexible package through leads.
Compared with the prior art, the invention has the following beneficial effects:
The invention utilizes the potential difference between metal and semiconductor, under the input of broadband mechanical signals, high-energy hot electrons are excited at the interface of the insulating layer/semiconductor layer, and after rebound, the high-energy hot electrons are transmitted through the insulating layer in an ultrafast way, and the hot electrons are conducted away before relaxation, so that the same-frequency electric signal output is formed. The self-driven sensor based on the semiconductor/insulating layer/metal dynamic diode has the advantages of wide frequency spectrum, high voltage, flexibility, long service life and the like, and can keep good performance in extreme environments (sea, land and air). Taking a dynamic diode mechanical sensor based on P-type silicon/FEP/silver as an example, 50V limit response can be realized, the voltage with the same frequency output without obvious attenuation can be stabilized under the ultra-wide mechanical frequency spectrum of 0-40kHz, the fastest response time measured by experiments can reach 1 mu s, and the sensor can stably work under extreme environments such as underwater, extremely cold and the like.
Drawings
FIG. 1 is a schematic diagram of a self-driven mechanical signal sensor based on semiconductor/insulator/metal dynamic diode according to the present invention;
FIG. 2 is a schematic diagram of a P-based silicon/FEP/silver dynamic diode sensor;
fig. 3 is a graph of output voltage at daily frequencies for a P-type silicon/FEP/silver based dynamic diode sensor.
Fig. 4 and 5 are graphs of output voltage at ultrasonic frequencies based on a P-type silicon/FEP/silver dynamic diode sensor.
Fig. 6 is a graph of output voltage at daily frequency for a graphene film/FEP/silver based flexible dynamic diode sensor.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1, the self-driven mechanical signal sensor based on a dynamic diode of the invention comprises a semiconductor layer 1, an insulator layer 2 and a metal layer 3 from bottom to top, wherein a back electrode is arranged on the semiconductor layer 1; packaging to form a gap layer by leaving a gap between the insulator layer 2 and the semiconductor layer 3, and leading out the metal layer 3 and the back electrode through a lead; in a dynamic state, a mechanical signal is input to the interface between the semiconductor layer and the insulator layer to enable the semiconductor layer and the insulator layer to be continuously contacted and separated.
Example 1
1) Depositing a layer of titanium electrode with the thickness of 50nm on the back of the P-silicon by an electron beam evaporation coating method;
2) Immersing the sample obtained in the step 1) into deionized water, acetone and isopropanol in sequence, and carrying out surface cleaning treatment;
3) Leading out a lead from the sample obtained in the step 2) at the back electrode;
4) Coating a layer of conductive silver paste on the surface of the FEP film, wherein the thickness of the conductive silver paste is 500nm;
5) Drying the sample obtained in the step 4), and then sequentially immersing the dried sample in deionized water, acetone and isopropanol to perform surface cleaning treatment;
6) Leading out a lead from the sample obtained in the step 5) at the conductive silver paste electrode;
7) After the edges of the p-type silicon are raised by using insulating glue, the insulating glue is adhered to the edges of the FEP, and a 10nm gap layer is established at the middle part of the p-type silicon and the FEP to form a working area;
8) The mechanical signals are vertically input into a working area, and the same-frequency electric signals can be obtained after microcosmic dynamic contact and separation;
Fig. 2 is a block diagram of a P-silicon/FEP/silver based dynamic diode sensor. The schematic diagram of the generator is shown in fig. 2, high-energy hot electrons in P-type silicon can be excited to be above a conduction band in the process of P-silicon and FEP contact, and the high-energy hot electrons enter a body to form ultra-fast transport after interface rebound; during the separation process, after the hot holes form a similar dynamic process, a reverse electric signal is output. Fig. 3 is a graph of power frequency output voltage based on a P-silicon/FEP/silver dynamic diode sensor. Fig. 4 and 5 are high frequency output voltage diagrams of P-silicon/FEP/silver-based dynamic diode sensors.
Example 2
1) Coating conductive silver paste on the graphene film, and drying;
2) Immersing the sample obtained in the step 1) into deionized water, acetone and isopropanol in sequence, and carrying out surface cleaning treatment;
3) Leading out a lead from the sample obtained in the step 2) on a copper foil back electrode;
4) Coating a layer of conductive silver paste on one side of the FEP film, wherein the thickness of the conductive silver paste is 500nm;
5) Drying the sample obtained in the step 4);
6) Leading out a lead from the sample obtained in the step 5) at the conductive silver paste electrode;
7) After the edges of the obtained graphene are heightened by using insulating glue, the edges of the graphene are adhered with the edges of the obtained FEP through the insulating glue, and a gap layer with the height of 20nm is established at the middle part of the edges of the graphene and the FEP to form a working area;
8) The mechanical signals are vertically input into a working area, and the same-frequency electric signals can be obtained after microcosmic dynamic contact and separation;
taking a graphene film/FEP/silver-based dynamic diode generator as an example, high-energy hot electrons in the graphene film can be excited to be above a Dirac point in the process of contact of the graphene film and the FEP, and enter a body to form ultra-fast transport after interface rebound, and meanwhile, carrier self-avalanche effect is accompanied; during the separation process, after the hot holes form a similar dynamic process, a reverse electric signal is output. Fig. 6 is a graph of power frequency output voltage based on graphene film/FEP/silver flexible dynamic diode sensor.
Example 3
1) Depositing a nickel-gold electrode layer on the back of the n-silicon rod by using an electron beam evaporation coating method, wherein the thickness of the nickel-gold electrode layer is 50nm;
2) Immersing the sample obtained in the step 1) into deionized water, acetone and isopropanol in sequence, and carrying out surface cleaning treatment;
3) Leading out a lead from the sample obtained in the step 2) at the back electrode;
4) Spraying a layer of conductive copper paste on the surface of polytetrafluoroethylene, wherein the thickness of the conductive copper paste is 500nm;
5) Drying the sample obtained in the step 4), and then sequentially immersing the dried sample in deionized water, acetone and isopropanol to perform surface cleaning treatment;
6) Leading out a lead from the sample obtained in the step 5) at the conductive silver paste electrode;
7) After the edges of the obtained n-type silicon are heightened by using insulating glue, the insulating glue is adhered to the edges of polytetrafluoroethylene, and a gap layer with the height of 20nm is established at the middle part of the insulating glue and the polytetrafluoroethylene without glue to form a working area;
8) The mechanical signals are vertically input into a working area, and the same-frequency electric signals can be obtained after microcosmic dynamic contact and separation;
The obtained n-silicon/polytetrafluoroethylene/copper-based dynamic diode sensor has the advantages that high-energy hot electrons in n-type silicon can be excited to be above a conduction band in the contact process of n-silicon and polytetrafluoroethylene, and the high-energy hot electrons enter a body to form ultra-fast transportation after interface rebound; during the separation process, after the hot holes form a similar dynamic process, a reverse electric signal is output.
In addition, through a great deal of experimental study, the semiconductor layer can also be any one of indium gallium arsenic, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum diselenide and tungsten disulfide, and the prepared samples can generate similar electric signal output, and the specific preparation method is not repeated, so that the invention can be realized according to the technical scheme description of the invention by a person skilled in the art.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (7)
1. The self-driven mechanical signal sensor based on the dynamic diode is characterized by comprising a layered structure arranged in a package, wherein the layered structure comprises a semiconductor layer, an insulating layer and a gap layer arranged between the semiconductor layer and the insulating layer, and metal electrodes are arranged on the semiconductor layer and the insulating layer and led out of the package through leads; the sensor converts external mechanical signal input into same-frequency electric signal output by utilizing a hot electron transition, rebound and transport mechanism in a dynamic diode through dynamic contact and separation between a semiconductor layer and an insulating layer;
The dynamic diode utilizes the potential difference between the metal and the semiconductor, under the input of a broadband mechanical signal, high-energy hot electrons are excited, and after the interface bounces, the transition forms a same-frequency electric signal output through an insulating layer;
flexible packaging is adopted for the insulating layer and the semiconductor layer, so that a gap layer is formed between the semiconductor layer and the insulating layer; the thickness of the void layer is not less than 10nm.
2. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein the semiconductor layer is one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum ditelluride, molybdenum diselenide, tungsten disulfide.
3. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein the insulating layer is one of a fluoroethylene propylene copolymer, polyvinylidene fluoride, teflon, hafnium oxide, titanium oxide, gallium nitride, lithium niobate, aluminum oxide insulating material.
4. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein the electrode on the insulating layer is any one or more of gold, silver, copper, aluminum, platinum, iron, and film-forming metallic materials.
5. The self-driven mechanical signal sensor based on dynamic diode according to claim 1, wherein the electrode on the semiconductor layer is one or more of composite electrodes of gold, palladium, silver, titanium, chromium and nickel.
6. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein the package is a flexible package.
7. A method of making a dynamic diode-based self-driven mechanical signal sensor according to any one of claims 1-6, comprising: after preparing the back electrode on the semiconductor layer, cleaning the surface and drying the surface; manufacturing a metal film electrode on the insulating layer; the insulating layer and the semiconductor layer are flexibly packaged, so that a gap layer is formed between the semiconductor layer and the insulating layer; the electrodes are led out of the flexible package through leads.
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