CN115290953B - Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof - Google Patents
Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof Download PDFInfo
- Publication number
- CN115290953B CN115290953B CN202210730387.0A CN202210730387A CN115290953B CN 115290953 B CN115290953 B CN 115290953B CN 202210730387 A CN202210730387 A CN 202210730387A CN 115290953 B CN115290953 B CN 115290953B
- Authority
- CN
- China
- Prior art keywords
- insulating layer
- layer
- semiconductor layer
- self
- mechanical signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000002784 hot electron Substances 0.000 claims abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- 239000002033 PVDF binder Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 claims description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004809 Teflon Substances 0.000 claims description 2
- 229920006362 Teflon® Polymers 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 230000007723 transport mechanism Effects 0.000 claims description 2
- 239000011800 void material Substances 0.000 claims description 2
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 238000009459 flexible packaging Methods 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 229910021389 graphene Inorganic materials 0.000 description 9
- 239000003292 glue Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- -1 polytetrafluoroethylene Polymers 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses a self-driven mechanical signal sensor based on a dynamic diode and a preparation method thereof, wherein the self-driven mechanical signal sensor comprises a layered structure arranged in a package, the layered structure comprises a semiconductor layer, an insulating layer and a gap layer arranged between the semiconductor layer and the insulating layer, metal electrodes are arranged on the semiconductor layer and the insulating layer, and the metal electrodes are led out of the package through leads; the invention uses the potential difference between the metal and the semiconductor, under the input of broadband mechanical signals, high-energy hot electrons are excited, and the high-energy hot electrons are transmitted through the insulating layer to form the same-frequency electric signals for output. The flexible self-driven sensor based on the semiconductor/insulating layer/metal dynamic diode has the advantages of wide frequency spectrum, high voltage, flexibility, long service life and the like, and can keep good performance in extreme environments (sea, land and air). In addition, the self-driven sensor is simple in structure, low in cost and compatible with the existing integrated circuit technology, so that the self-driven sensor can be popularized and used on a large scale.
Description
Technical Field
The present invention relates to a self-driven sensor and a method for manufacturing the same, and more particularly, to a self-driven mechanical signal sensor based on a dynamic diode and a method for manufacturing the same.
Background
Today, with the search of more coordinates on the earth by humans, self-driven sensing devices in extreme environments have been driven, and there is a great need for an integrable semiconductor sensing chip to provide powerful guarantee for further searching the earth and even the universe. However, the current self-driven sensor has low integration level, and the semiconductor-based broadband mechanical vibration sensor still has a large upgrading space. For a long time, the academia and industry are searching for a reliable solution to integrate a wide frequency mechanical signal into an existing electrical signal system. The main device model is a device based on piezoelectric effect, and the main principle is to output by utilizing charge displacement fixed in a material body, so that the problems are obvious, namely, higher device internal resistance and lower limit response amplitude. There is therefore a great need for a conductive current sensor that can respond quickly and accurately to a wide frequency, broad range of mechanical signals.
Therefore, we design a semiconductor/insulator/metal based conduction current dynamic diode, which can accurately and rapidly convert the wide-frequency mechanical signal input into the same-frequency electrical signal output through the physical processes of hot electron transition, rebound and in-vivo transport. The invention uses the potential difference between the metal and the semiconductor, under the input of broadband mechanical signals, high-energy hot electrons are excited, after the interface bounces, the transition forms the same-frequency electric signal output through the insulating layer, and the invention breaks through the fixed mode that the insulating material cannot conduct current in the traditional thinking. The flexible self-driven sensor based on the semiconductor/insulating layer/metal dynamic diode has the advantages of wide frequency spectrum, high voltage, flexibility, long service life and the like, and can keep good performance in extreme environments (sea, land and air).
Disclosure of Invention
The invention aims to provide a novel mechanical signal sensor and a preparation method thereof, wherein the sensor is a self-driven mechanical signal sensor based on a dynamic diode, can realize the same-frequency electric signal output under the input of broadband mechanical signals, and has quick response.
The invention adopts the technical scheme that:
The self-driven mechanical signal sensor based on the dynamic diode comprises a layered structure arranged in a package, wherein the layered structure comprises a semiconductor layer, an insulating layer and a gap layer arranged between the semiconductor layer and the insulating layer, metal electrodes are arranged on the semiconductor layer and the insulating layer, and the metal electrodes are led out of the package through leads; the sensor converts external mechanical signal input into same-frequency electric signal output by utilizing a hot electron transition, rebound and transport mechanism in a dynamic diode through dynamic contact and separation between a semiconductor layer and an insulating layer.
Further, the semiconductor layer is one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum diselenide and tungsten disulfide.
Further, the insulating layer is one of insulating materials such as fluoroethylene propylene copolymer (FEP), polyvinylidene fluoride (PVDF), teflon (PTFE), hafnium oxide, titanium oxide, gallium nitride, lithium niobate, aluminum oxide and the like.
Further, the electrode on the insulating layer is any one or more of gold, silver, copper, aluminum, platinum and iron which can form a film.
Further, the electrode on the semiconductor layer is one or more of gold, palladium, silver, titanium, chromium and nickel.
Further, the package is a flexible package.
Further, the thickness of the void layer is preferably not less than 10nm.
The method for preparing the self-driven mechanical signal sensor based on the dynamic diode comprises the following steps: after preparing the back electrode on the semiconductor layer, cleaning the surface and drying the surface; manufacturing a metal film electrode on the insulating layer; the insulating layer and the semiconductor layer are flexibly packaged, so that a gap layer is formed between the semiconductor layer and the insulating layer; the electrodes are led out of the flexible package through leads.
Compared with the prior art, the invention has the following beneficial effects:
The invention utilizes the potential difference between metal and semiconductor, under the input of broadband mechanical signals, high-energy hot electrons are excited at the interface of the insulating layer/semiconductor layer, and after rebound, the high-energy hot electrons are transmitted through the insulating layer in an ultrafast way, and the hot electrons are conducted away before relaxation, so that the same-frequency electric signal output is formed. The self-driven sensor based on the semiconductor/insulating layer/metal dynamic diode has the advantages of wide frequency spectrum, high voltage, flexibility, long service life and the like, and can keep good performance in extreme environments (sea, land and air). Taking a dynamic diode mechanical sensor based on P-type silicon/FEP/silver as an example, 50V limit response can be realized, the voltage with the same frequency output without obvious attenuation can be stabilized under the ultra-wide mechanical frequency spectrum of 0-40kHz, the fastest response time measured by experiments can reach 1 mu s, and the sensor can stably work under extreme environments such as underwater, extremely cold and the like.
Drawings
FIG. 1 is a schematic diagram of a self-driven mechanical signal sensor based on semiconductor/insulator/metal dynamic diode according to the present invention;
FIG. 2 is a schematic diagram of a P-based silicon/FEP/silver dynamic diode sensor;
fig. 3 is a graph of output voltage at daily frequencies for a P-type silicon/FEP/silver based dynamic diode sensor.
Fig. 4 and 5 are graphs of output voltage at ultrasonic frequencies based on a P-type silicon/FEP/silver dynamic diode sensor.
Fig. 6 is a graph of output voltage at daily frequency for a graphene film/FEP/silver based flexible dynamic diode sensor.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1, the self-driven mechanical signal sensor based on a dynamic diode of the invention comprises a semiconductor layer 1, an insulator layer 2 and a metal layer 3 from bottom to top, wherein a back electrode is arranged on the semiconductor layer 1; packaging to form a gap layer by leaving a gap between the insulator layer 2 and the semiconductor layer 3, and leading out the metal layer 3 and the back electrode through a lead; in a dynamic state, a mechanical signal is input to the interface between the semiconductor layer and the insulator layer to enable the semiconductor layer and the insulator layer to be continuously contacted and separated.
Example 1
1) Depositing a layer of titanium electrode with the thickness of 50nm on the back of the P-silicon by an electron beam evaporation coating method;
2) Immersing the sample obtained in the step 1) into deionized water, acetone and isopropanol in sequence, and carrying out surface cleaning treatment;
3) Leading out a lead from the sample obtained in the step 2) at the back electrode;
4) Coating a layer of conductive silver paste on the surface of the FEP film, wherein the thickness of the conductive silver paste is 500nm;
5) Drying the sample obtained in the step 4), and then sequentially immersing the dried sample in deionized water, acetone and isopropanol to perform surface cleaning treatment;
6) Leading out a lead from the sample obtained in the step 5) at the conductive silver paste electrode;
7) After the edges of the p-type silicon are raised by using insulating glue, the insulating glue is adhered to the edges of the FEP, and a 10nm gap layer is established at the middle part of the p-type silicon and the FEP to form a working area;
8) The mechanical signals are vertically input into a working area, and the same-frequency electric signals can be obtained after microcosmic dynamic contact and separation;
Fig. 2 is a block diagram of a P-silicon/FEP/silver based dynamic diode sensor. The schematic diagram of the generator is shown in fig. 2, high-energy hot electrons in P-type silicon can be excited to be above a conduction band in the process of P-silicon and FEP contact, and the high-energy hot electrons enter a body to form ultra-fast transport after interface rebound; during the separation process, after the hot holes form a similar dynamic process, a reverse electric signal is output. Fig. 3 is a graph of power frequency output voltage based on a P-silicon/FEP/silver dynamic diode sensor. Fig. 4 and 5 are high frequency output voltage diagrams of P-silicon/FEP/silver-based dynamic diode sensors.
Example 2
1) Coating conductive silver paste on the graphene film, and drying;
2) Immersing the sample obtained in the step 1) into deionized water, acetone and isopropanol in sequence, and carrying out surface cleaning treatment;
3) Leading out a lead from the sample obtained in the step 2) on a copper foil back electrode;
4) Coating a layer of conductive silver paste on one side of the FEP film, wherein the thickness of the conductive silver paste is 500nm;
5) Drying the sample obtained in the step 4);
6) Leading out a lead from the sample obtained in the step 5) at the conductive silver paste electrode;
7) After the edges of the obtained graphene are heightened by using insulating glue, the edges of the graphene are adhered with the edges of the obtained FEP through the insulating glue, and a gap layer with the height of 20nm is established at the middle part of the edges of the graphene and the FEP to form a working area;
8) The mechanical signals are vertically input into a working area, and the same-frequency electric signals can be obtained after microcosmic dynamic contact and separation;
taking a graphene film/FEP/silver-based dynamic diode generator as an example, high-energy hot electrons in the graphene film can be excited to be above a Dirac point in the process of contact of the graphene film and the FEP, and enter a body to form ultra-fast transport after interface rebound, and meanwhile, carrier self-avalanche effect is accompanied; during the separation process, after the hot holes form a similar dynamic process, a reverse electric signal is output. Fig. 6 is a graph of power frequency output voltage based on graphene film/FEP/silver flexible dynamic diode sensor.
Example 3
1) Depositing a nickel-gold electrode layer on the back of the n-silicon rod by using an electron beam evaporation coating method, wherein the thickness of the nickel-gold electrode layer is 50nm;
2) Immersing the sample obtained in the step 1) into deionized water, acetone and isopropanol in sequence, and carrying out surface cleaning treatment;
3) Leading out a lead from the sample obtained in the step 2) at the back electrode;
4) Spraying a layer of conductive copper paste on the surface of polytetrafluoroethylene, wherein the thickness of the conductive copper paste is 500nm;
5) Drying the sample obtained in the step 4), and then sequentially immersing the dried sample in deionized water, acetone and isopropanol to perform surface cleaning treatment;
6) Leading out a lead from the sample obtained in the step 5) at the conductive silver paste electrode;
7) After the edges of the obtained n-type silicon are heightened by using insulating glue, the insulating glue is adhered to the edges of polytetrafluoroethylene, and a gap layer with the height of 20nm is established at the middle part of the insulating glue and the polytetrafluoroethylene without glue to form a working area;
8) The mechanical signals are vertically input into a working area, and the same-frequency electric signals can be obtained after microcosmic dynamic contact and separation;
The obtained n-silicon/polytetrafluoroethylene/copper-based dynamic diode sensor has the advantages that high-energy hot electrons in n-type silicon can be excited to be above a conduction band in the contact process of n-silicon and polytetrafluoroethylene, and the high-energy hot electrons enter a body to form ultra-fast transportation after interface rebound; during the separation process, after the hot holes form a similar dynamic process, a reverse electric signal is output.
In addition, through a great deal of experimental study, the semiconductor layer can also be any one of indium gallium arsenic, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum diselenide and tungsten disulfide, and the prepared samples can generate similar electric signal output, and the specific preparation method is not repeated, so that the invention can be realized according to the technical scheme description of the invention by a person skilled in the art.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (7)
1. The self-driven mechanical signal sensor based on the dynamic diode is characterized by comprising a layered structure arranged in a package, wherein the layered structure comprises a semiconductor layer, an insulating layer and a gap layer arranged between the semiconductor layer and the insulating layer, and metal electrodes are arranged on the semiconductor layer and the insulating layer and led out of the package through leads; the sensor converts external mechanical signal input into same-frequency electric signal output by utilizing a hot electron transition, rebound and transport mechanism in a dynamic diode through dynamic contact and separation between a semiconductor layer and an insulating layer;
The dynamic diode utilizes the potential difference between the metal and the semiconductor, under the input of a broadband mechanical signal, high-energy hot electrons are excited, and after the interface bounces, the transition forms a same-frequency electric signal output through an insulating layer;
flexible packaging is adopted for the insulating layer and the semiconductor layer, so that a gap layer is formed between the semiconductor layer and the insulating layer; the thickness of the void layer is not less than 10nm.
2. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein the semiconductor layer is one of silicon, gallium arsenide, indium gallium arsenide, zinc oxide, germanium, cadmium telluride, gallium nitride, indium phosphide, molybdenum disulfide, black phosphorus, tungsten diselenide, molybdenum ditelluride, molybdenum diselenide, tungsten disulfide.
3. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein the insulating layer is one of a fluoroethylene propylene copolymer, polyvinylidene fluoride, teflon, hafnium oxide, titanium oxide, gallium nitride, lithium niobate, aluminum oxide insulating material.
4. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein the electrode on the insulating layer is any one or more of gold, silver, copper, aluminum, platinum, iron, and film-forming metallic materials.
5. The self-driven mechanical signal sensor based on dynamic diode according to claim 1, wherein the electrode on the semiconductor layer is one or more of composite electrodes of gold, palladium, silver, titanium, chromium and nickel.
6. The dynamic diode-based self-driven mechanical signal sensor of claim 1, wherein the package is a flexible package.
7. A method of making a dynamic diode-based self-driven mechanical signal sensor according to any one of claims 1-6, comprising: after preparing the back electrode on the semiconductor layer, cleaning the surface and drying the surface; manufacturing a metal film electrode on the insulating layer; the insulating layer and the semiconductor layer are flexibly packaged, so that a gap layer is formed between the semiconductor layer and the insulating layer; the electrodes are led out of the flexible package through leads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210730387.0A CN115290953B (en) | 2022-06-24 | 2022-06-24 | Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210730387.0A CN115290953B (en) | 2022-06-24 | 2022-06-24 | Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115290953A CN115290953A (en) | 2022-11-04 |
| CN115290953B true CN115290953B (en) | 2024-05-17 |
Family
ID=83820361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210730387.0A Active CN115290953B (en) | 2022-06-24 | 2022-06-24 | Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115290953B (en) |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3817750A (en) * | 1970-05-05 | 1974-06-18 | Licentia Gmbh | Method of producing a semiconductor device |
| JPH02310974A (en) * | 1989-05-25 | 1990-12-26 | Mitsubishi Electric Corp | Semiconductor photodetector |
| US5591321A (en) * | 1993-11-02 | 1997-01-07 | Electric Power Research Institute | Detection of fluids with metal-insulator-semiconductor sensors |
| CN101179075A (en) * | 2006-11-10 | 2008-05-14 | 冲电气工业株式会社 | High-voltage-withstanding semiconductor device and fabrication method thereof |
| CN101202293A (en) * | 2006-12-13 | 2008-06-18 | 和舰科技(苏州)有限公司 | Image sensor and method of manufacture |
| CN101714566A (en) * | 2008-10-03 | 2010-05-26 | 索尼株式会社 | Sensor element and method of driving sensor element, and input device, display device with input function and communication device |
| CN101777620A (en) * | 2009-12-31 | 2010-07-14 | 深圳市蓝科电子有限公司 | High-power LED lead frame using graphite material as substrate, and preparation method |
| JP2012156286A (en) * | 2011-01-26 | 2012-08-16 | Tateyama Kagaku Kogyo Kk | Infrared sensor |
| WO2013071335A1 (en) * | 2011-11-14 | 2013-05-23 | Hardcastle Philip | Multilayered heat to power conversion device |
| CN105470313A (en) * | 2014-08-12 | 2016-04-06 | 北京纳米能源与系统研究所 | Back-gate field effect transistor based on contact electrification |
| CN109906376A (en) * | 2016-11-02 | 2019-06-18 | 株式会社Lg化学 | Gas detection sensor |
| CN109935627A (en) * | 2019-01-21 | 2019-06-25 | 上海易密值半导体技术有限公司 | Thin film transistor (TFT) |
| CN112152509A (en) * | 2020-07-10 | 2020-12-29 | 浙江大学 | Novel direct current generator based on semiconductor/polar liquid/semiconductor dynamic diode and preparation method thereof |
| CN112165275A (en) * | 2020-08-26 | 2021-01-01 | 浙江大学 | Dynamic diode generator capable of working at extremely low temperature and preparation method thereof |
| CN113169224A (en) * | 2018-12-27 | 2021-07-23 | 京瓷株式会社 | Circuit and electric device |
| CN113594271A (en) * | 2021-07-22 | 2021-11-02 | 浙江大学杭州国际科创中心 | Wide-spectrum photoelectric detector based on two-dimensional material/insulating layer/semiconductor structure |
| CN114256362A (en) * | 2021-12-15 | 2022-03-29 | 欧梯恩智能科技(苏州)有限公司 | Photoelectric detector and preparation method thereof |
| CN114300541A (en) * | 2021-12-30 | 2022-04-08 | 广州华星光电半导体显示技术有限公司 | Thin film transistor, manufacturing method thereof and array substrate |
| CN114497314A (en) * | 2022-04-18 | 2022-05-13 | 泉州三安半导体科技有限公司 | Light emitting diode and light emitting device |
| CN114551497A (en) * | 2022-02-23 | 2022-05-27 | 浙江大学 | Graphene-semiconductor dynamic diode high-performance generator with vertical structure and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008226903A (en) * | 2007-03-08 | 2008-09-25 | Toshiba Corp | Optical sensor element and its driving method |
| CN105136860A (en) * | 2015-07-24 | 2015-12-09 | 浙江大学 | Humidity sensor based on graphene oxide/graphene/silicon and preparation method thereof |
| CN111297321A (en) * | 2018-12-18 | 2020-06-19 | 北京纳米能源与系统研究所 | Transparent flexible sensor, preparation method thereof, electronic skin and wearable device |
-
2022
- 2022-06-24 CN CN202210730387.0A patent/CN115290953B/en active Active
Patent Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3817750A (en) * | 1970-05-05 | 1974-06-18 | Licentia Gmbh | Method of producing a semiconductor device |
| JPH02310974A (en) * | 1989-05-25 | 1990-12-26 | Mitsubishi Electric Corp | Semiconductor photodetector |
| US5591321A (en) * | 1993-11-02 | 1997-01-07 | Electric Power Research Institute | Detection of fluids with metal-insulator-semiconductor sensors |
| CN101179075A (en) * | 2006-11-10 | 2008-05-14 | 冲电气工业株式会社 | High-voltage-withstanding semiconductor device and fabrication method thereof |
| CN101202293A (en) * | 2006-12-13 | 2008-06-18 | 和舰科技(苏州)有限公司 | Image sensor and method of manufacture |
| CN101714566A (en) * | 2008-10-03 | 2010-05-26 | 索尼株式会社 | Sensor element and method of driving sensor element, and input device, display device with input function and communication device |
| CN101777620A (en) * | 2009-12-31 | 2010-07-14 | 深圳市蓝科电子有限公司 | High-power LED lead frame using graphite material as substrate, and preparation method |
| JP2012156286A (en) * | 2011-01-26 | 2012-08-16 | Tateyama Kagaku Kogyo Kk | Infrared sensor |
| WO2013071335A1 (en) * | 2011-11-14 | 2013-05-23 | Hardcastle Philip | Multilayered heat to power conversion device |
| CN105470313A (en) * | 2014-08-12 | 2016-04-06 | 北京纳米能源与系统研究所 | Back-gate field effect transistor based on contact electrification |
| CN109906376A (en) * | 2016-11-02 | 2019-06-18 | 株式会社Lg化学 | Gas detection sensor |
| CN113169224A (en) * | 2018-12-27 | 2021-07-23 | 京瓷株式会社 | Circuit and electric device |
| CN109935627A (en) * | 2019-01-21 | 2019-06-25 | 上海易密值半导体技术有限公司 | Thin film transistor (TFT) |
| CN112152509A (en) * | 2020-07-10 | 2020-12-29 | 浙江大学 | Novel direct current generator based on semiconductor/polar liquid/semiconductor dynamic diode and preparation method thereof |
| CN112165275A (en) * | 2020-08-26 | 2021-01-01 | 浙江大学 | Dynamic diode generator capable of working at extremely low temperature and preparation method thereof |
| CN113594271A (en) * | 2021-07-22 | 2021-11-02 | 浙江大学杭州国际科创中心 | Wide-spectrum photoelectric detector based on two-dimensional material/insulating layer/semiconductor structure |
| CN114256362A (en) * | 2021-12-15 | 2022-03-29 | 欧梯恩智能科技(苏州)有限公司 | Photoelectric detector and preparation method thereof |
| CN114300541A (en) * | 2021-12-30 | 2022-04-08 | 广州华星光电半导体显示技术有限公司 | Thin film transistor, manufacturing method thereof and array substrate |
| CN114551497A (en) * | 2022-02-23 | 2022-05-27 | 浙江大学 | Graphene-semiconductor dynamic diode high-performance generator with vertical structure and preparation method thereof |
| CN114497314A (en) * | 2022-04-18 | 2022-05-13 | 泉州三安半导体科技有限公司 | Light emitting diode and light emitting device |
Non-Patent Citations (1)
| Title |
|---|
| MISiC肖特基二极管式气体传感器响应特性分析;钟德刚 等;《华中科技大学学报(自然科学版)》(第03期);93-95 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115290953A (en) | 2022-11-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10541358B2 (en) | Hybrid generator using thermoelectric generation and piezoelectric generation | |
| KR102155933B1 (en) | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof | |
| CN105633191B (en) | A kind of have two-dimentional transition metal chalcogenide homojunction photodetector of vertical-growth structure and preparation method thereof | |
| JP6049271B2 (en) | Electric energy generator | |
| CN109672367B (en) | Direct current generator based on dynamic PN junction and preparation method thereof | |
| Opoku et al. | Fabrication of field-effect transistors and functional nanogenerators using hydrothermally grown ZnO nanowires | |
| CN109149992B (en) | Improved friction nano generator | |
| WO2017153906A2 (en) | Pseudo-conductive high-electron mobility transistors and microelectronic sensors based on them | |
| CN109921687A (en) | A kind of layered semiconductor-semiconductor dynamic PN junction dc generator and preparation method thereof | |
| CN112152509B (en) | Direct current generator based on dynamic diode and preparation method thereof | |
| CN115290953B (en) | Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof | |
| CN108963065B (en) | Method for preparing single-layer multi-layer graphene thermoelectric detector through laser ablation | |
| Ashery et al. | Current transport, photosensitive, and dielectric properties of PVA/n-Si heterojunction photodiode | |
| CN111431433B (en) | Direct current generator based on dynamic semiconductor homojunction and preparation method thereof | |
| KR101627131B1 (en) | Electric device | |
| CN112165275B (en) | Dynamic diode generator capable of working at extremely low temperature and preparation method thereof | |
| CN114551497A (en) | Graphene-semiconductor dynamic diode high-performance generator with vertical structure and preparation method thereof | |
| US4543442A (en) | GaAs Schottky barrier photo-responsive device and method of fabrication | |
| US11522468B2 (en) | Direct-current generator based on dynamic semiconductor heterojunction, and method for preparing same | |
| Wang | Nanogenerators for self-powering nanosystems and piezotronics for smart MEMS/NEMS | |
| Alharbi et al. | Advanced integrated sensor and layer transfer technologies for wearable bioelectronics | |
| Palsaniya et al. | Size dependent triboelectric nanogenerator and effect of temperature | |
| Wang | Nanogenerators and nanopiezotronics | |
| JP2002134766A (en) | Solar cell and method for producing the same | |
| NL2030410B1 (en) | New type of dc generator based on semiconductor/polar liquid/semiconductor dynamic diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Room B3029, Floor 3, Building 1 (North), No. 368, Liuhe Road, Binjiang District, Hangzhou, Zhejiang 310051 Applicant after: Hangzhou Gelanfeng Technology Co.,Ltd. Address before: 310000 room b3029, 3rd floor, building 1 (North), No. 368, Liuhe Road, Binjiang District, Hangzhou City, Zhejiang Province Applicant before: Hangzhou Gelanfeng Nano Technology Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |