JPH02310974A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPH02310974A JPH02310974A JP1132203A JP13220389A JPH02310974A JP H02310974 A JPH02310974 A JP H02310974A JP 1132203 A JP1132203 A JP 1132203A JP 13220389 A JP13220389 A JP 13220389A JP H02310974 A JPH02310974 A JP H02310974A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- light
- wire
- semiconductor
- prevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000000605 extraction Methods 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000012216 screening Methods 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000031700 light absorption Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は周波数特性の改善を図った半導体受光装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor light receiving device with improved frequency characteristics.
第２図は従来の半導体受光装置の断面図である。 FIG. 2 is a sectional view of a conventional semiconductor light receiving device.
図において、（１）はれ−ＩｎＰ基板、（２）はｎ−ｌ
−基板口）上に形成されたＩｎＧａＡｓ光吸収層、（３
）はＩＨＧａＡａ光吸収層（２）上に形成されたＩｎＰ
窓層、（４）は選択拡散により形成されたＰ″４−Ｉｎ
ＧａＡａ層、（５）はＰ＋−ＩｎＰ層、（６）は開口部
を有するＳｌ、Ｎ４． （７）は光を受ける開口部、（
８）はＰ＋−ＩｎＰ層（５）に接している電流取り出し
用のｐｔ＊、（９）は受光部以外へ入射する光を遮光し
、ｐ！４１（８）に対し絶縁された遮光マスク用電極ａ
・はｎ−ＩｎＰ基板口）側に形成されたｎｔｆｆｌ、Ｑ
ｌはＰ ｔ４１ｉ（８）ｆｃ ｆ７ （−Ｙ ホントさ
れたＡｕワイヤである。In the figure, (1) is a thin InP substrate, (2) is an n-l
- InGaAs light absorption layer formed on (3)
) is InP formed on the IHGaAa light absorption layer (2)
The window layer (4) is P″4-In formed by selective diffusion.
GaAa layer, (5) is P+-InP layer, (6) is Sl with opening, N4. (7) is the opening that receives the light, (
8) is a current extracting pt* in contact with the P+-InP layer (5), (9) blocks light entering other than the light receiving part, and p! 41(8) Insulated light-shielding mask electrode a
・ntffl, Q formed on the n-InP substrate opening) side
l is P t41i(8)fc f7 (-Y) real Au wire.
次に動作について説明する。ｐ電Ｗ （８）とｎ電極Ｑ
１間に逆バイアスを印加した場合、開口部（７）より入
射した光はＩｎＧａＡｓ５光吸収層（２）で吸収されキ
ャリアを発生させる。このキャリアが逆バイアスにより
広がった空乏層内を分離・ドリフトすることにより光電
流が発生する。Next, the operation will be explained. p-electrode W (8) and n-electrode Q
When a reverse bias is applied between 1 and 1, the light incident through the opening (7) is absorbed by the InGaAs5 light absorption layer (2) and generates carriers. When these carriers separate and drift within the depletion layer expanded by reverse bias, a photocurrent is generated.
従来の半導体受光装置は以上のように構成されているの
で、開口部以外に入射する光を遮断するため、ｐ電極に
対し絶縁された遮光マスク用電極を形成していたが、パ
ッケージへの組立て時の勤ワイヤが遮光マスク用電極に
接触し、それにより容量の増加による周波数特性の劣化
が発生していた０
この発明は以上のような問題点を解決するためになされ
たもので１組立て時などにおいてＡｕワイヤが遮光マス
ク用電極に接触しない様にし、容量増加による周波数特
性の劣化を防止した半導体受光装置を得ることを目的と
する。Conventional semiconductor photodetectors are configured as described above, and in order to block light entering other than the opening, a light-shielding mask electrode is formed that is insulated from the p-electrode, but assembly into a package is difficult. At the time, the working wire came into contact with the light-shielding mask electrode, which caused deterioration of frequency characteristics due to an increase in capacitance.This invention was made to solve the above-mentioned problems. It is an object of the present invention to provide a semiconductor light-receiving device in which Au wires are prevented from coming into contact with light-shielding mask electrodes, and deterioration of frequency characteristics due to increased capacitance is prevented.
この発明に係る半導体受光装置は遮光マスク用電極の上
にＳｔａｇ等の絶縁膜を形成することによりＡｕワイヤ
と遮光マスク用電極の短絡を防止する。The semiconductor light-receiving device according to the present invention prevents a short circuit between the Au wire and the light-shielding mask electrode by forming an insulating film such as Stag on the light-shielding mask electrode.
〔作用］
この発明における半導体受光装置は遮光マスク用電極上
にＳｉｎ、等の絶縁膜を形成することにより、Ａｕワイ
ヤとの短絡を防止でき、容量増加による周波数特性の劣
化を防止できる。[Function] By forming an insulating film such as Sin on the light-shielding mask electrode, the semiconductor light receiving device of the present invention can prevent short circuit with the Au wire and prevent deterioration of frequency characteristics due to increased capacitance.
以下、この発明の一実施例を図について説明する。第１
図は半導体受光装置の断面図である。図にＳいて、（１
１〜（６）は第２図の従来例に示したものと同等である
ので説明を省略する。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a sectional view of a semiconductor light receiving device. S in the figure (1
1 to (6) are the same as those shown in the conventional example shown in FIG. 2, so their explanation will be omitted.
０コはＡｕワイヤ０υが遮光マスク用型［（９）に接触
しないために形成されたｓｉｏ、である。0 is a sio formed so that the Au wire 0υ does not come into contact with the light-shielding mask mold [(9)].
次に動作Ｃごついて説明する。逆バイアスを印加した場
合、開口部（７）より入射した光はＩＨＧａＡｓ光吸収
層（２）で吸収されてキャリアを発生し、逆バイアスに
より延びた空乏層内で分離・ドリフトし光電流となる。Next, operation C will be explained. When a reverse bias is applied, the light incident through the aperture (7) is absorbed by the IHGaAs light absorption layer (2) and generates carriers, which separate and drift within the depletion layer extended by the reverse bias and become a photocurrent. .
開口部（７）以外に照射された光は遮光マスク用型ＦＭ
（９）により遮断され、半導体内には入らない。また、
遮光マスク用型［（９）上に形成されたＳＩＯｇＱＳ５
によりＡｕワイヤ０υと遮光マスク用電極（９）との短
絡を防止し、容量の増加による０周波数特性の劣化は防
止できる。The light irradiated to areas other than the opening (7) is a light-shielding mask type FM.
It is blocked by (9) and does not enter the semiconductor. Also,
Light-shielding mask mold [SIOgQS5 formed on (9)
This prevents a short circuit between the Au wire 0υ and the light shielding mask electrode (9), and prevents deterioration of the 0 frequency characteristic due to an increase in capacitance.
以上の様にこの発明によれば遮光マスク用１１Ｌ極上に
８１０８等の絶Ｉ＆膜を形成することによりＡｕワイヤ
と遮光マスク用電極との短絡を防止し容量増加による周
波数特性の劣化を防止できる。As described above, according to the present invention, by forming an isolation film such as 8108 on the top of the light-shielding mask 11L, it is possible to prevent a short circuit between the Au wire and the light-shielding mask electrode and prevent deterioration of frequency characteristics due to an increase in capacitance.
第１図はこの発明の一実施例による半導体受光装置の断
面図、第２図は従来の半導体受光装置の断面図である。
図において、（１）はｎ−ＩｎＰ基板、（２）はＩｎＧ
ａＡａ光吸収層、（３）はＩｎＰ窓層、（４）はＰ＋−
ＩｎＧａＡ３層、（５）はＰ″’−ＩｎＰ層、（６）は
Ｓｔ、Ｎ４． （７）は開口部、（８）はｐ電極。
（９）は遮光マスク用電極、 ＱＯはｎ電極、ＯηはＡ
ｕワイヤ、＠は５ｉｏｔである。
なお２図中、同一符号は同一、または相当部分を示す。FIG. 1 is a sectional view of a semiconductor light receiving device according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional semiconductor light receiving device. In the figure, (1) is an n-InP substrate, (2) is an InG substrate.
aAa light absorption layer, (3) is InP window layer, (4) is P+-
InGaA 3 layer, (5) is P''-InP layer, (6) is St, N4. (7) is opening, (8) is p electrode. (9) is electrode for light shielding mask, QO is n electrode, Oη is A
u wire, @ is 5iot. Note that in the two figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
極を、半導体上に開口部を有する絶縁膜を介して形成し
た半導体受光装置において、第２の電極上に絶縁膜を形
成したことを特徴とする半導体受光装置。In a semiconductor light receiving device in which a second electrode insulated from a first electrode for current extraction is formed on a semiconductor via an insulating film having an opening, an insulating film is formed on the second electrode. A semiconductor light receiving device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1132203A JPH02310974A (en) | 1989-05-25 | 1989-05-25 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1132203A JPH02310974A (en) | 1989-05-25 | 1989-05-25 | Semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02310974A true JPH02310974A (en) | 1990-12-26 |
Family
ID=15075805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1132203A Pending JPH02310974A (en) | 1989-05-25 | 1989-05-25 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02310974A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115290953A (en) * | 2022-06-24 | 2022-11-04 | 杭州格蓝丰纳米科技有限公司 | Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof |
-
1989
- 1989-05-25 JP JP1132203A patent/JPH02310974A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115290953A (en) * | 2022-06-24 | 2022-11-04 | 杭州格蓝丰纳米科技有限公司 | Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof |
| CN115290953B (en) * | 2022-06-24 | 2024-05-17 | 杭州格蓝丰科技有限公司 | Self-driven mechanical signal sensor based on dynamic diode and preparation method thereof |
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