CN115275628A - Frequency conversion method and device for metal-memory phase change material composite structure AFSS - Google Patents
Frequency conversion method and device for metal-memory phase change material composite structure AFSS Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0046—Theoretical analysis and design methods of such selective devices
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Bioinformatics & Computational Biology (AREA)
- Lasers (AREA)
Abstract
The invention discloses a frequency conversion method and a frequency conversion device for a metal-memory phase change material composite structure AFSS. By preparing a composite frequency selection surface of a metal material and a memory phase change material and adopting a three-dimensional pulse laser scanning device, a pulse laser beam with a specific range of pulse width and energy density is output to rapidly scan the frequency selection surface of the composite unit array structure, the memory phase change material in the composite unit array structure is induced to be rapidly switched between a high resistance state and a low resistance state, the equivalent conductive size of a composite resonance unit is changed, the function of regulating and controlling the electromagnetic transmission performance change of the frequency selection surface is realized, and an actively variable resonance pattern array and a frequency selection passband are formed. The laser induced memory phase change material in the metal-memory phase change material composite unit array realizes the active frequency conversion function of the frequency selective surface, and has the advantages of rapidness, reversibility, remarkable phase change effect and nonvolatility.
Description
Technical Field
The invention relates to the field of electromagnetic wave transmission modulation and the field of laser processing, in particular to a frequency conversion method and a frequency conversion device for a metal-memory phase change material composite structure AFSS.
Background
A conventional Frequency Selective Surface (FSS) is composed of periodically arranged metal patch elements or periodically arranged aperture elements on a metal screen. The basic electromagnetic characteristics of the antenna are represented by the selective characteristics of electromagnetic waves with different working frequencies, polarization states and incident angles, the radar scattering cross section of an aircraft can be obviously reduced, the probability of being detected by an enemy radar is effectively reduced, and therefore the antenna is widely applied to stealth aspects of warplanes, satellites and ship-based radar antenna covers. There are four basic types that can be classified according to their transmission performance: band pass type FSS, band stop type FSS, high pass type FSS, low pass type FSS.
The Frequency Selective Surface can be classified into a Passive Frequency Selective Surface (PFSS) and an Active Frequency Selective Surface (AFSS). The passive frequency selection surface structure is fixed, the preparation process is simple and convenient, but the resonant frequency is fixed and unchanged, the passive frequency selection surface structure is difficult to flexibly adapt to a complex and changeable electromagnetic environment, once the resonant frequency is decoded by an enemy, the stealth function is easily lost, and the detected risk is increased.
In order to solve the problems of PFSS, an active frequency selection surface technology with adjustable resonant frequency is developed, the structural size and the arrangement mode of an FSS resonance unit are changed by actively controlling an excitation source, and the tuning effect of an FSS resonance frequency point and the conversion function of transmission characteristics are realized. The mainstream way to realize the AFSS technology at present is to adjust the electromagnetic transmission characteristics by introducing lumped circuit elements (PIN/varactor diodes) and applying an electrical signal externally (for example, patent nos. CN106571534A and CN 112164894B). However, in the practical application of large-format AFSS, thousands of integrated circuit elements need to be welded, so that not only is the manufacturing precision difficult to guarantee, but also the defects of large element loss, wiring required in the excitation process and the like exist, and the method is difficult to be practically applied to the preparation of the AFSS radome. In addition, the invention patent (CN 112490677B) discloses an AFSS adjusting method based on liquid crystal, which can adjust the dielectric constant of the liquid crystal by applying voltage to the upper and lower metal electrodes of the liquid crystal, thereby realizing continuous adjustment of the frequency selection passband. The scheme is simple to adjust and operate, but is difficult to apply to the preparation process of the large-area curved surface radome, and meanwhile, the frequency adjusting and controlling process needs to apply voltage to the metal electrode, so that certain influence is caused on the frequency selection characteristic.
The invention patent (CN 111987400A) discloses a regulation and control method of a photoresistor-based optically-controlled frequency selection surface, which utilizes the advantages of high sensitivity and convenient regulation of optically-controlled frequency conversion to realize the tuning of resonance frequency points, but can not be applied to the actual curved surface radome due to the adoption of lumped elements. The invention patent (CN 109841958A) discloses a catalyst based on Cl - The AFSS solution of the CdS-doped photosensitive film changes the conductive characteristic of the photosensitive film by controlling the change of the external illumination intensity, so that the size of a resonance unit is changed, and the frequency conversion effect is realized. However, in the implementation process of the scheme, the light source intensity needs to be kept stable all the time, and any illumination intensity fluctuation or external light source interference can cause the conductivity fluctuation of the thin film, so that the tuning frequency and the electromagnetic transmission characteristic fluctuation are caused, and the AFSS cannot stably work in the tuning frequency working range. Especially, the conductivity of the film is rapidly reduced when the illumination disappears, which leads to the failure of the frequency conversion function. And the temperature of the working environment can also influence the stability of the conductivity of the film, and when the surface of the light-operated phase-change material is covered by a coating or a dust layer, the frequency tuning function can be lost, so that the stable frequency conversion effect of the large-area AFSS radar cover is influenced. In addition, the preparation process adopted in the patent cannot be used for FSS (free space solution) preparation of large complex curved surfacesIn addition, the method needs high-temperature treatment at the temperature higher than 600 ℃ in both the film doping stage and the post-treatment annealing stage in the preparation process, so that great limitation is caused to the substrate selection of the AFSS, and the engineering application of the AFSS radome cannot be realized.
In order to solve the problems of the invention patents, an invention patent (CN 111910154A) discloses a vanadium dioxide (VO) 2 ) AFSS solution for thin films. The proposal utilizes VO 2 The characteristic that the crystal structure and the photoelectric characteristic of the thin film material are obviously changed after the thin film material reaches the phase change temperature threshold is controlled by controlling the temperature of the external environment to rise to VO 2 The phase change threshold temperature of the film material enables the conductive size shape or arrangement mode of the resonant unit pattern to be changed, and therefore the frequency conversion effect is achieved. When the external environment temperature is lower than VO 2 VO at the phase transition temperature of the thin film material 2 The crystal structure and the photoelectric characteristic of the thin film material return to the initial state, and the conductive size shape or the arrangement mode of the resonant unit pattern also return to the initial state, so that the AFSS function is realized. Thus, relative Cl - CdS-doped thin film, VO 2 The membrane has a more stable tuning frequency operating range.
However, this solution still has some disadvantages, above all the fact that the external temperature must be kept at VO 2 The film material can stably work at the resonance frequency of variable frequency only when the phase change threshold temperature is higher than the phase change threshold temperature. Once the external temperature drops to VO 2 VO below the phase transition threshold temperature of the film material 2 The thin film crystal structure and the electro-optical characteristics return to the original state, resulting in the resonant frequency of operation returning to the original frequency. Thus, VO 2 Although the film has a phase-change temperature threshold value, the working stability of the curved-surface AFSS is improved, but the film still can be interfered by external temperature fluctuation; second, VO 2 The preparation conditions of the film material are very strict, the requirements on the material and the surface roughness of the coated base material are higher, and different base material materialsThe coating effect of the texture and the surface roughness are greatly different, and VO is increased 2 Instability and inconsistency of film preparation; VO finally prepared on the surface of the substrate 2 The film must be annealed at high temperature in an oxygen-free furnace, thus greatly limiting the shape and size of the curved AFSS sample, as well as the material selection for the substrate.
Disclosure of Invention
The present invention aims to provide a frequency conversion method and device for a metal-memory phase change material composite structure AFSS, so as to solve the problems in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a frequency conversion method and a device of metal-memory phase change material composite structure AFSS comprise the following steps:
the method comprises the following steps: preparing a metal unit graphic array on an insulating substrate plated with a metal conductive film layer by adopting a pulse laser etching technology to form an FSS resonance pattern and a frequency selection passband, then depositing a layer of amorphous memory phase change film on the prepared FSS resonance pattern by adopting a film deposition technology, preparing a composite unit pattern of metal and a memory phase change material by adopting the pulse laser etching technology to realize the preparation of an AFSS frequency selection surface resonance unit array, and finally depositing a high-transmission protective layer on the surface of the prepared AFSS sample piece;
step two: a three-dimensional pulse laser scanning device is adopted to output a pulse laser beam with a pulse width and energy density in a specific range to rapidly scan the frequency selection surface of the composite structure, so that the memory phase change material is induced to be rapidly switched between a high resistance state and a low resistance state, the equivalent conductive size of the composite resonance unit array structure is changed, and the function of regulating and controlling the electromagnetic transmission performance change of the frequency selection surface is realized;
preferably, the insulating base material used in the first step includes materials suitable for metal and memory phase change film deposition, such as quartz, sapphire, silicon wafer, ceramic, silicon nitride, epoxy resin, etc., the metal conductive material in the first step may be copper, aluminum, gold, silver, indium Tin Oxide (ITO), etc., and the memory phase change material mainly comprises three elements of tellurium, germanium and antimony, which can be expressed as GeTe (1-x) (Sb2Te3) x Mainly comprising GeTe, ge 2 Sb 2 Te 5 ，Ge 3 Sb 2 Te 6 And Sb 2 Te 3 The material can realize reversible transformation from an amorphous state to a crystalline state under external excitation, and the optical constant and the electrical constant of the material can also be changed obviously in the process.
Furthermore, the memory phase-change material can expand the photoelectric characteristics by doping other elements, such as silver, nitrogen, and the like. Alternative preparation methods include magnetron sputtering, ion beam sputtering, pulsed laser deposition, chemical vapor deposition or molecular beam epitaxy, and the like, as well as thin film attachment techniques employing flexible substrate transfer.
Preferably, the laser light source in the second step adopts a wavelength range of 300-1200nm, a pulse width is not more than nanosecond, and an energy density is 15mJ/cm 2 To 50mJ/cm 2 The laser pulse within the range can convert the amorphous a-GeTe into crystalline c-GeTe with higher purity, thereby realizing the conversion from a high resistance state to a low resistance state; and the energy density is 90mJ/cm 2 To 120mJ/cm 2 The laser pulse within the range can convert the crystalline state c-GeTe into the amorphous state a-GeTe with higher purity, thereby realizing the conversion from the low resistance state to the high resistance state.
Preferably, the amorphous state a-GeTe is converted into crystalline state c-GeTe with higher purity, the structure, pattern or size of the composite resonance unit is changed, electromagnetic transmission performance of the frequency selective surface is changed, and therefore the frequency resonance point of the AFSS is changed.
Preferably, the function of implementing the electromagnetic transmission performance variation of the frequency selective surface in the second step can be implemented by the following modes:
changing the equivalent resonant cell shape;
changing the size of the equivalent resonance unit;
changing the structural form of the equivalent resonance unit;
the electromagnetic filtering performance is controlled to be switched.
Preferably, when the laser scanning induction treatment is carried out on the metal-memory phase change material composite structure AFSS prepared on the complex curved surface, the laser scanning induction treatment device comprises a three-dimensional laser rotary scanning device and a three-dimensional laser revolution scanning device, wherein the three-dimensional laser rotary scanning device is used for treating the AFSS on the inner side of the curved surface; the three-dimensional laser revolution scanning device is used for processing the AFSS on the outer side of the curved surface;
the three-dimensional laser rotary scanning device comprises a pulse laser, a laser rotary scanning head moving mechanism and a control system;
the three-dimensional laser revolution scanning device consists of a pulse laser, a laser three-dimensional scanning head and an assembly shell thereof, a laser three-dimensional scanning head moving mechanism and a control system.
Preferably, in the three-dimensional laser rotary scanning device, the laser rotary scanning head comprises a beam expanding collimating lens group, a dynamic focusing system, a beam shaping system, a focusing feedback system, a dichroic mirror, and a high-speed rotating deflection mirror system; the dynamic focusing system comprises a focusing lens group and a voice coil motor linear moving mechanism; the laser rotary scanning head moving mechanism consists of a linear moving motor and a transmission mechanism, and the linear moving motor and the transmission mechanism are used for driving the laser rotary scanning head to move back and forth; the high-speed rotating deflection reflector system comprises a hollow shaft rotating motor, a reflector and a deflection motor, wherein the deflection motor is used for driving the reflector to swing, and the center of the mirror surface of the reflector coincides with the axis of the hollow shaft rotating motor and the optical axis of the pulse laser.
Preferably, in the three-dimensional laser rotary scanning device, a focusing feedback system in the laser rotary scanning head judges the focusing state by actively outputting a laser beam and receiving return light, and the center of an optical axis of the focusing feedback system is superposed with the center of a mirror surface of a dichroic mirror and the optical axis of pulse laser;
preferably, in the three-dimensional laser revolution scanning device, the laser three-dimensional scanning head and the assembling housing thereof include a beam expanding and collimating lens group, a dynamic focusing system, a beam shaping system, a laser scanning lens group system, and a focusing feedback system.
Preferably, in the three-dimensional laser revolution scanning device, the laser three-dimensional scanning head moving mechanism is used for driving the laser three-dimensional scanning head and the assembling shell thereof to perform circular and vertical linear movement; the control system has the function that the pulse laser, the laser three-dimensional scanning head and the laser three-dimensional scanning head moving mechanism work cooperatively, and can perform circumferential scanning or longitudinal curved surface partition scanning of gradual longitudinal movement on the AFSS on the outer side of the curved surface.
The invention has the technical effects and advantages that:
(1) The memory phase-change material is switched between the high-resistance state and the low-resistance state through laser induction, and has the advantages of rapidness, reversibility and remarkable phase-change effect, the memory phase-change material has nonvolatility, continuous excitation of laser is not required to be kept after the phase-change condition is achieved, and the memory phase-change material has extremely strong external interference resistance;
(2) The invention realizes the AFSS function by converting the instantaneous photoinduced temperature rise excitation memory phase change material between the high resistance state and the low resistance state, has no parasitic capacitance, does not cause negative influence on the frequency selection function of the structural array, adopts the passive structure of the memory phase change material, has simple and convenient preparation, does not have the problems of traditional electrically controlled AFSS wiring and welding, can avoid using a heating furnace to finish the preparation and function realization processes, gets rid of the limitation on the selection of substrates which are not high temperature resistant, can be deposited on material substrates such as quartz, sapphire, silicon wafers, ceramics, silicon nitride, epoxy resin or flexible PET, greatly expands the selection range of the deposited substrates, and can realize the practical engineering application of large-size curved surface AFSS;
(3) The memory phase-change material composite structure prepared by the doping technology can be subjected to induced phase change by pulse lasers with different energy densities, and the rapid multi-section frequency conversion function under laser scanning can be realized.
Drawings
Fig. 1 is a schematic structural diagram of a three-dimensional laser rotary scanning device used for inducing a metal-memory phase change material composite structure AFSS on the inner side of a curved insulating substrate.
Fig. 2 is a schematic structural diagram of a three-dimensional laser revolution scanning device used for inducing a metal-memory phase change material composite structure AFSS on the outer side of a curved insulating substrate.
FIG. 3 is a schematic diagram of a process of fabricating a metal-memory phase change material composite structure AFSS resonant cell pattern array on the outer side of a curved insulating substrate according to the present invention.
Fig. 4 is a schematic diagram of a process for preparing a metal-memory phase change material composite structure AFSS resonant cell pattern array on the inner side of a curved surface insulating substrate according to the present invention.
Fig. 5 is a schematic diagram of the present invention in which a pulse laser induces a metal-memory phase change material composite structure AFSS to realize a shape change of an equivalent resonant unit by a scanning device, wherein (a) is a patch-type AFSS, and (b) is a slot-type AFSS.
Fig. 6 is a schematic diagram of the pulse laser induced by the scanning device to the metal-memory phase change material composite structure AFSS to realize the equivalent resonant unit size change in the present invention, wherein (a) is a patch-type AFSS, and (b) is a slot-type AFSS.
Fig. 7 is a schematic diagram of the pulse laser induced by the scanning device to the metal-memory phase change material composite structure AFSS to realize the structural form change of the equivalent resonant unit in the present invention, wherein (a) is a patch-type AFSS, and (b) is a slot-type AFSS.
Fig. 8 is a schematic diagram of the pulse laser in the present invention, which is used to induce the metal-memory phase change material composite structure AFSS through a scanning device to realize the function of controlling the electromagnetic filtering performance "on-off", wherein (a) is a patch-type AFSS, and (b) is a slot-type AFSS.
FIG. 9 (a) is a unit of etching pattern of copper metal in an embodiment of the present invention; (b) In the embodiment of the invention, the pulse laser is used for etching the amorphous germanium telluride film layer to prepare a composite structure pattern array; (c) In the embodiment of the invention, the amorphous germanium telluride film is induced into a crystalline composite structure pattern array by using the pulse laser.
FIG. 10 is a pattern array of a composite structure of a metal and amorphous germanium telluride film at normal incidence S in an embodiment of the present invention 21 A frequency response curve.
FIG. 11 shows a metal and crystalline germanium telluride in an embodiment of the present inventionPattern array of film composite structure under normal incidence condition S 21 A frequency response curve.
In the figure: 1. a curved surface insulating substrate; 2. metal conductive film: 3. an array of metal resonant cells; 4. an amorphous high-resistance memory phase change film layer; 5. a metal-memory phase change material composite structure resonance unit array; 6. a high transmission protective layer; 7. three-dimensional pulse laser etching equipment; 8. a three-dimensional laser rotary scanning device; 9. a pulsed laser; 10. a laser rotary scanning head and an assembly housing thereof; 11. a laser rotary scanning head moving mechanism; 12. a control system; 13. a beam expanding collimating lens group; 14. a dynamic focusing system; 15. a beam shaping system; 16. a focus feedback system; 17. rotating the deflection mirror system at a high speed; 18. a focusing lens group; 19. a voice coil motor linear movement mechanism; 20. a hollow shaft rotating electrical machine; 21. a mirror plate; 22. a linear moving motor; 23. a transmission mechanism for the linear motion motor; 24. a yaw motor; 25. a dichroic mirror; 26. a laser three-dimensional scanning head and an assembly shell thereof; 27. a laser scanning mirror group system; 28. a focus feedback system; 29. a circular motion motor and a transmission mechanism thereof; 30. a vertical motion motor and a transmission mechanism thereof; 31. a laser three-dimensional scanning head moving mechanism; 32. a scanning head fixing device; 33. a three-dimensional laser revolution scanning device; 34. a curved AFSS support; 35. a crystalline state low resistance memory phase change film layer; 5-1, an arc composite surface mount type AFSS resonance unit pattern; 5-2, a circular ring composite surface mount type AFSS resonance unit pattern; 5-3, a circular ring composite slit type AFSS resonant unit pattern; 5-4, forming a circular arc composite type gap AFSS resonant unit pattern; 5-5, narrow-ring composite patch type AFSS resonant unit patterns; 5-6, wide-ring composite surface mount type AFSS resonance unit patterns; 5-7, wide-ring composite type gap AFSS resonant unit pattern; 5-8, narrow ring composite gap type AFSS resonant unit pattern; 5-9, a cross composite patch type AFSS resonance unit pattern; 5-10, grid line composite surface mount type AFSS resonance unit patterns; 5-11, a grid line composite slit type AFSS resonant unit pattern; 5-12, a cross composite slit type AFSS resonant unit pattern; 5-13, high-resistance state circular ring patch type AFSS resonance unit patterns; 5-14, low-resistance state circular ring patch type AFSS resonance unit patterns; 5-15, high-resistance state circular ring composite gap type AFSS resonant unit patterns; 5-16, low-resistance state circular ring composite type gap AFSS resonant unit pattern.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
For the frequency selective surface with large-scale complex curved surface, it can be prepared on the outer wall of the substrate, and also can be prepared on the inner wall of the substrate of the housing. For the outer AFSS radome, a three-dimensional laser revolution scanning device based on revolution and vertical displacement is adopted to induce the memory phase change film layer; for the inner AFSS radar cover, a three-dimensional laser rotary scanning device is adopted to induce a memory phase change film layer.
The invention provides a frequency conversion method and a frequency conversion device of a metal-memory phase change material composite structure AFSS (advanced finite state switching) as shown in figures 1 to 11, wherein the frequency conversion method comprises the following steps:
the method comprises the following steps: preparing a metal unit graphic array on an insulating substrate plated with a metal conductive film layer by adopting a pulse laser etching technology to form an FSS resonance pattern and a frequency selection passband, then depositing a layer of amorphous memory phase change film on the prepared FSS resonance pattern by adopting a film deposition technology, preparing a composite unit pattern of metal and a memory phase change material by adopting the pulse laser etching technology to realize the preparation of an AFSS frequency selection surface resonance unit array, and finally depositing a high-transmission protective layer on the surface of the prepared AFSS sample piece;
step two: a three-dimensional pulse laser scanning device is adopted to output a pulse laser beam with a pulse width and energy density in a specific range to rapidly scan the frequency selection surface of the composite structure, so that the memory phase change material is induced to be rapidly switched between a high resistance state and a low resistance state, the equivalent conductive size of the composite resonance unit array structure is changed, and the function of regulating and controlling the electromagnetic transmission performance change of the frequency selection surface is realized;
the metal conductive material can be copper, aluminum, gold, silver, ITO, etc., and the memory phase-change material mainly comprises three elements of tellurium, germanium and antimony, which can be expressed as GeTe (1-x) (Sb2Te3) x Mainly comprising GeTe, ge 2 Sb 2 Te 5 ，Ge 3 Sb 2 Te 6 And Sb 2 Te 3 The material can realize reversible transformation from an amorphous state to a crystalline state under external excitation, and optical constants and electrical constants of the material can also change remarkably in the process, wherein germanium telluride GeTe is the material with the most remarkable conductivity change before and after state switching in the material, the change amplitude can reach 5 orders of magnitude, and the material can realize the function of high resistance state and low resistance state conversion, has two main structures of amorphous a-GeTe and crystalline c-GeTe, the crystalline c-GeTe structure also comprises two relatively stable crystalline phases of a rhombohedral phase and a cubic phase, and can realize rapid state switching under the external excitation, particularly, when the external temperature is higher than 175 ℃, the amorphous a-GeTe film starts to convert to form the crystalline c-GeTe film; when the external temperature reaches above the melting temperature of 720 ℃, and the film is rapidly cooled, the crystalline state c-GeTe film is converted into the amorphous state a-GeTe.
Although the phase change process of the memory phase change film material is also realized by external temperature excitation, the phase change process is connected with Cl - Doping CdS and VO 2 Phase change thin film materials are very different, taking GeTe as an example, firstly, the materials have higher phase change temperature threshold and larger phase change conversion temperature difference, and when the external temperature is higher than 175 ℃, the amorphous a-GeTe is converted to form crystalline c-GeTe; when the external temperature reaches the melting temperature of above 720 ℃, the crystalline state c-GeTe can be converted into amorphous state a-GeTe; secondly, when GeTe reaches the phase-change temperature threshold value, the conditions are different, and when the amorphous a-GeTe is converted into the crystalline c-GeTe, the external temperature only needs to stay for a period of time above the phase-change temperature threshold value, and the temperature excitation does not need to be kept all the time; the temperature reduction rate is faster than 10 on the premise of reaching the melting threshold value when the crystalline state c-GeTe is converted into the amorphous state a-GeTe 9 K/s, therefore withCl - Doping CdS and VO 2 The biggest difference of the phase-change film material is that the phase-change film material does not need external continuous excitation, no matter GeTe is in amorphous state a-GeTe or crystalline state c-GeTe, the GeTe material does not have phase-change conversion as long as the external temperature does not reach a phase-change temperature threshold, so that the phase-change film material has no requirement on the stability of the external temperature, and has strong capacity of resisting the interference of external temperature fluctuation.
The laser light source for inducing the phase change of the memory phase change material adopts a wavelength range of 300-1200nm, a pulse width of not more than nanosecond and an energy density of 15mJ/cm 2 To 50mJ/cm 2 The laser pulse within the range can convert the amorphous a-GeTe into crystalline c-GeTe with higher purity to realize the conversion from high resistance state to low resistance state, and the energy density is 90mJ/cm 2 To 120mJ/cm 2 The laser pulse within the range can convert the crystalline state c-GeTe into the amorphous state a-GeTe with higher purity, thereby realizing the conversion from the low resistance state to the high resistance state.
In the process, the amorphous a-GeTe is converted into the crystalline c-GeTe with higher purity, the structure, the graph or the size of the composite resonance unit is changed, the electromagnetic transmission performance of the frequency selection surface is changed, and therefore the frequency resonance point of the AFSS is changed.
The function of realizing the change of the electromagnetic transmission performance of the frequency selective surface can be realized by the following modes:
changing the equivalent resonant cell shape;
changing the size of the equivalent resonance unit;
changing the structural form of the equivalent resonance unit;
the electromagnetic filtering performance is controlled to be switched.
When the metal-memory phase change material composite structure AFSS prepared on a plane or a complex curved surface is subjected to laser scanning induction treatment, a three-dimensional laser rotary scanning device 8 is used for treating the AFSS on the inner side of the curved surface, and a three-dimensional laser revolution scanning device 33 is used for treating the AFSS on the outer side of the curved surface, wherein the three-dimensional laser rotary scanning device 8 comprises a pulse laser 9, a laser rotary scanning head 10, a laser rotary scanning head moving mechanism 11 and a control system 12, and the three-dimensional laser revolution scanning device 33 is composed of the pulse laser 9, the laser three-dimensional scanning head and an assembly shell 26 thereof, a laser three-dimensional scanning head moving mechanism 31 and the control system 12.
For the three-dimensional laser rotary scanning device 8, the laser rotary scanning head 10 includes a beam expanding collimating lens group 13, a dynamic focusing system 14, a beam shaping system 15, a focusing feedback system 16, a dichroic mirror 25, and a high-speed rotary deflecting mirror system 17, the dynamic focusing system 14 includes a focusing lens group 18 and a voice coil motor linear moving mechanism 19, the laser rotary scanning head moving mechanism 11 includes a linear moving motor 22 and a transmission mechanism 23, the linear moving motor 22 and the transmission mechanism 23 are used for driving the laser rotary scanning head 10 to reciprocate, the high-speed rotary deflecting mirror system 17 includes a hollow shaft rotating motor 20, a reflecting mirror 21, and a deflecting motor 24, the deflecting motor 24 is used for driving the reflecting mirror 21 to swing, the mirror surface center of the reflecting mirror 21 coincides with the axis of the hollow shaft rotating motor 20 and the pulse laser optical axis, further, the focusing feedback system 16 in the laser rotary scanning head 10 determines the focusing state by actively outputting the laser beam, and the optical axis center of the focusing feedback system 16 coincides with the center of the dichroic mirror 25 and the pulse laser optical axis.
For the three-dimensional laser revolution scanning device 33, the laser three-dimensional scanning head and the assembling shell 26 thereof comprise a beam expanding collimating lens group 13, a dynamic focusing system 14, a beam shaping system 15, a laser scanning lens group system 27 and a focusing feedback system 28, the laser scanning lens group system 27 has the function of deflecting and scanning the shaped laser beam according to a specific path, different scanning device combinations can be selected according to different application scenes, the laser three-dimensional scanning head moving mechanism 31 has the function of driving the laser three-dimensional scanning head and the assembling shell 26 thereof to perform circumferential and vertical linear movement, and the control system 12 has the function of enabling the pulse laser 9, the laser three-dimensional scanning head 26 and the laser three-dimensional scanning head moving mechanism 31 to cooperatively work, so as to realize global scanning of AFSS outside a curved surface.
Specifically, the method comprises the following steps:
as shown in fig. 3, a schematic diagram of a metal-memory phase change material composite structure AFSS resonant unit pattern is prepared on the outer side of an insulating substrate according to the present invention, first, a three-dimensional pulse laser etching device 7 is used to perform three-dimensional laser etching processing on a curved insulating substrate 1 plated with a metal conductive film layer 2, appropriate laser etching parameters are selected to selectively remove only the metal film layer without damaging the insulating substrate 1, a metal unit pattern array 3 is prepared to form an FSS resonant pattern and a frequency selection passband, then, a thin film deposition technique is used to deposit an amorphous memory phase change film layer 4 on the prepared curved FSS resonant pattern, then, a three-dimensional pulse laser etching device 7 and appropriate laser etching parameters are used to selectively remove a portion of amorphous memory phase change material without damaging the prepared metal unit film layer 2 and the substrate 1, a unit pattern array 5 of metal and memory phase change material composite is formed, preparation of the AFSS frequency selection surface resonant unit array is completed, finally, a high-transmittance protective layer 6 is deposited on the surface of the prepared curved AFSS resonant unit array, thereby avoiding contamination of the phase change material and vaporization loss of the same situation that the ss is prepared on the inner wall of the shell, the AFSS resonant unit pattern is prepared by the same as the three-memory phase change material composite structure pattern preparation technique as the AFSS laser etching device 4, and the three-dimensional pulse laser etching technology is used to prepare the three-memory phase change material composite structure shown in the AFSS resonant unit array, and the process of the curved surface AFSS resonant unit array.
The method for achieving the rapid switching of the memory phase change material in the prepared metal-memory phase change material composite structure AFSS on the inner side of the complex curved surface through laser induction processing is characterized in that the memory phase change material in the prepared metal-memory phase change material composite structure AFSS is subjected to rapid switching in a high-resistance state and a low-resistance state, the equivalent conductive size of a composite resonance unit array structure is changed, and the electromagnetic transmission performance of a frequency selection surface is changed is obtained, as shown in fig. 1, the three-dimensional laser rotary scanning device 8 comprises a pulse laser 9, a laser rotary scanning head 10, a laser rotary scanning head moving mechanism 11 and a control system 12, the central wavelength of pulse laser output by the pulse laser 9 can be 300nm to 1200nm, the width of laser pulse is not more than nanosecond, the laser repetition frequency is 1Hz to 20MHz, the laser rotary scanning head 10 comprises a beam expanding collimating lens group 13, a dynamic focusing system 14, a beam shaping system 15, a focusing feedback system 16, a dichroic mirror 25 and a high-speed rotary deflection mirror system 17, the further dynamic focusing system 14 comprises a focusing lens group 18 and a linear moving mechanism 19, the further high-speed rotary deflection mirror system 17 comprises a focusing motor 20, the mirror 21 and a focusing motor 16, and the optical axis of the laser beam output linear focusing motor 21, and the optical axis of the focusing motor 21 is superposed with the axis of the laser output by a hollow shaft axis of the laser rotary focusing motor, and the optical axis of the laser rotary focusing motor 16, and the optical axis of the focusing motor 16, and the laser output linear focusing motor 21, and the optical axis of the laser rotary focusing motor 21 are superposed.
The beam expanding and collimating lens 13 is used for expanding and collimating the pulse laser beam output by the pulse laser 9; the dynamic focusing system 14 is used for dynamically regulating and controlling the position of a laser focus to ensure that the position of a laser focal plane is always positioned on the surface of a curved surface, once the focusing feedback system 16 finds that the laser focal plane is out of focus due to the curvature change of the curved surface and deviates from the surface of the curved surface, a feedback signal is rapidly sent to the control system 12, the control system 12 outputs a regulating and controlling signal to the dynamic focusing system 14, and the voice coil motor linear moving mechanism 19 moves the focusing lens group 18 to enable the laser focal plane to rapidly return to the surface of the curved surface, so that the dynamic focusing function of the laser focus is realized; the function of the beam shaping system 15 is to shape the focused laser beam into focused light spots in the form of points, lines, planes and the like, the shape can be in different shapes such as round, square, array and the like to realize high-efficiency processing function for different application occasions, the function of the focusing feedback system 16 is to perform defocusing monitoring on the shaped focused beam to ensure that the processed area has proper energy density, the function of dichroism is to perform light path integration, completely transmit the induced beam of the laser 9, completely reflect the beam of the focusing feedback system 16 and ensure that the axes of the light paths of the two are superposed; the high-speed rotating deflection reflector system 17 has the function of rotating and vertically swinging the shaped focused laser beam along a circumferential path for scanning, the laser rotating scanning head moving mechanism 11 has the function of driving the laser rotating scanning head and the assembled shell 10 thereof to move up and down so as to realize the three-dimensional scanning induction function of the pulse laser, and the control system 12 has the function of enabling the pulse laser 9, the laser rotating scanning head 10 and the laser rotating scanning head moving mechanism 11 to work in a cooperative manner so as to realize the laser induction phase change function of the metal-memory phase change material composite structure AFSS on the inner side of the complex curved surface.
In the specific implementation process, the control system 12 starts the pulse laser 9 to output a pulse laser beam, the pulse laser beam is injected into the beam expanding collimating lens 13 of the laser rotary scanning head 10 to be subjected to beam expanding collimation, then is adjusted by the dynamic focusing system 14, and is shaped into a required spot shape and size by the beam shaping system 15, and is focused on an AFSS composite structure on the inner side of a complex curved surface by the dichroic mirror 25, the hollow shaft rotary motor 20 and the reflecting lens 21, and the control system 12 controls the voice coil motor linear moving mechanism 19 to move the focusing lens group 18 according to feedback information of the focusing system 16, so that the focused pulse laser can be always accurately focused on the AFSS surface. The pulse laser energy density capable of converting the memory phase change material from a high resistance state to a low resistance state is obtained by controlling the light beam characteristics of the pulse laser 9, when the AFSS needs to be subjected to phase change induction, the control system 12 starts the pulse laser 9 and the high-speed rotating deflection reflector system 17, and the output energy density is 15mJ/cm 2 To 50mJ/cm 2 The range of the pulse laser starts to perform circular rotation scanning induction, meanwhile, the dynamic focusing system 14 performs real-time regulation and control on the focal plane position according to the feedback information of the focusing system 16 to ensure that the laser focal plane position is always positioned on the surface of the curved surface, after the high-speed rotation deflection reflector system 17 finishes one circle of rotation scanning, the control system 12 starts the laser rotation scanning head moving mechanism 11 to move upwards for a distance of an induction light spot to perform the next circular rotation scanning induction process, or the control system 12 simultaneously controls the high-speed rotation deflection reflector system 17 and the laser rotation scanning head moving mechanism 11 to perform spiral scanning induction phase change, thereby realizing the laser scanning induction of the whole inner side area of the complex curved surfaceThe phase change material is induced to be converted from the amorphous state to the crystalline state, so that the conversion from the high-resistance state to the low-resistance state is realized, the equivalent conductive size of the composite resonance unit array structure is changed, and a new frequency selection surface resonance frequency point is obtained.
Similarly, the output energy density of the pulse laser 9 is further adjusted to 90mJ/cm by the control system 12 2 To 120mJ/cm 2 The range of pulse laser beams is adopted, the three-dimensional laser rotary scanning device 8 is used for repeating the phase change process induced by the global scanning on the inner side of the complex curved surface, the crystalline film layer can be converted into the amorphous film layer, the low-resistance state is quickly converted into the high-resistance state, the resonant pattern is changed back to the original state, and the original resonant frequency point and the transmission passband of the AFSS are recovered.
The method for carrying out laser induction processing on the memory phase change material in the prepared metal-memory phase change material composite structure AFSS on the outer side of the complex curved surface to realize the rapid switching of the memory phase change material between a high resistance state and a low resistance state and change the equivalent conductive size of a composite resonance unit array structure to obtain the method for changing the electromagnetic transmission performance of the frequency selection surface comprises the steps that as shown in figure 2, an adopted three-dimensional laser revolution scanning device 34 comprises a pulse laser 9, a laser three-dimensional scanning head and an assembly shell 26 thereof, a laser three-dimensional scanning head moving mechanism 32 and a control system 12, the central wavelength of pulse laser output by the pulse laser 9 can be 300nm to 1200nm, the pulse width of the laser is not more than nanosecond, the laser repetition frequency is 1Hz to 20MHz, the laser three-dimensional scanning head 26 comprises a beam expanding collimating mirror group 13, a dynamic focusing system 14, a beam shaping system 15, a laser mirror group 27 and a focusing feedback system 28, the laser three-dimensional scanning mirror group 27 can be composed of different modes of a double-vibrating mirror combination, a vibrating mirror-rotating mirror combination, a single-piece reflector and the like, and the laser three-dimensional scanning head moving mechanism 31 is composed of a linear transmission motor 30 for driving the laser three-dimensional scanning head and the assembly shell 26 thereof to carry out linear motion and a linear transmission mechanism thereof.
The functions of the beam expanding collimating lens group 13, the dynamic focusing system 14, the beam shaping system 15, the focusing feedback system 28 and other devices are the same as those of the laser rotary scanning head 10, the laser scanning lens group system 27 is used for deflecting and scanning the shaped laser beam according to a specific path, different scanning device combinations can be selected according to different application scenes, the laser three-dimensional scanning head moving mechanism 31 is used for driving the laser three-dimensional scanning head and the assembling shell 26 thereof to perform circumferential and vertical linear movement, and the control system 12 is used for enabling the pulse laser 9, the laser three-dimensional scanning head 26 and the laser three-dimensional scanning head moving mechanism 31 to cooperatively work, so that global scanning of AFSS (auto focus system) on the outer side of a curved surface is realized.
In the specific implementation process, the control system 12 starts the pulse laser 9 to output the energy density of 15mJ/cm 2 To 50mJ/cm 2 The pulse laser light respectively passes through the beam expanding collimating lens group 13, the dynamic focusing system 14 and the light beam shaping system 15, then enters the laser scanning lens group 27, is irradiated on the surface of the AFSS after being converged, and realizes that the focused light beam carries out subarea scanning on the pattern of the curved surface AFSS through the deflection of the lenses in the scanning lens group, when the pattern of the curved surface AFSS is out of focus due to the fluctuation of the surface of the AFSS, the focusing feedback system 28 transmits a focusing signal to the control system 12, and the dynamic focusing lens group 14 is adjusted after the processing of the focusing signal, so that the light beam is focused on the surface of the AFSS again. The control system 12 controls the motion speed of the circular motion motor and the transmission mechanism 29 thereof to realize circular scanning of the curved surface AFSS, and after one-circle scanning is finished, the control system controls the linear motor and the transmission mechanism 30 thereof to realize longitudinal movement, and then next circular scanning is carried out until the global scanning process of the AFSS surface is finished; or the AFSS surface divides the AFSS circumferential curved surface according to the effective scanning area of the laser scanning mirror group 27, the control system 12 controls the linear motor and the transmission mechanism 30 thereof to realize that the laser scanning head 26 is longitudinally moved to carry out the regional scanning induction treatment, after each regional curved surface scanning is finished, the control system 12 controls the circular motion motor and the transmission mechanism 29 thereof to move to the next scanning area, the regional laser scanning is repeated until the global scanning process of the AFSS surface is finished, the irradiated memory phase change material is changed from an amorphous state to a crystalline state, the conversion from a high resistance state to a low resistance state is realized, the equivalent conductive size of the composite resonance unit array structure is changed, and the new frequency selection surface resonance frequency point is obtained.
The output energy density of the pulse laser 9 is further adjusted by the control system 12 to be 90mJ/cm 2 To 120mJ/cm 2 The range of pulse laser beams is adopted, and the three-dimensional laser revolution scanning device 33 is used for repeating the process of global scanning induced phase change on the outer side of the complex curved surface, so that the crystalline film layer in the composite pattern array can be converted into the amorphous film layer, the low-resistance state can be quickly converted into the high-resistance state, the resonant pattern can be changed back to the original state, and the original resonant frequency point and the transmission passband of the AFSS can be restored.
The function of changing the electromagnetic transmission performance of the metal-memory phase change material composite type AFSS can be realized in the following manner.
Changing the equivalent resonant cell shape: referring to fig. 5, the shape of the resonant cell pattern of the metal-memory phase change material composite patch-type AFSS fabricated on the insulating substrate 1 is modified. The specific steps are that the pulse width is not more than nanosecond, and the energy density is 15mJ/cm 2 To 50mJ/cm 2 The pulse laser scans and irradiates an array formed by circular arc composite patch type AFSS resonant unit patterns 5-1, so that an irradiated memory phase change film layer is changed from a high-resistance amorphous state 4 to a low-resistance crystalline state 35, a metal pattern area 3 is not changed, a circular ring composite patch type resonant unit pattern 5-2 is formed, and similarly, the pulse width is not more than nanosecond, and the energy density is 90mJ/cm 2 To 120mJ/cm 2 The pulse laser scans and irradiates a circular ring composite patch type resonance unit pattern 5-2 to change an irradiated memory phase change film layer from a low-resistance crystalline state 35 into a high-resistance amorphous state 4, a metal pattern area 3 is not changed, the composite resonance unit pattern 5-2 is changed back into a resonance unit pattern 5-1 to realize reverse modification, the shape 5-3 of the resonance unit pattern of the metal-memory phase change material composite gap type AFSS prepared on an insulating substrate 1 is modified, and the specific steps are that the pulse width is not more than nanosecond, and the energy density is 15mJ/cm 2 To 50mJ/cm 2 The pulse laser carries out scanning irradiation on an array formed by the annular composite type slit type resonance unit patterns 5-3, so that the irradiated memory phase change film layer is changed from a high-resistance amorphous state 4 to a low-resistance crystalline state 35, the metal pattern area 3 is not changed, and the circular arc composite type slit type resonance unit patterns 5-4 are formed 2 To 120mJ/cm 2 The pulse laser scans and irradiates an array formed by the annular composite slit type resonance unit patterns 5-5, so that the irradiated memory phase change film layer is changed from a low-resistance crystalline state 35 to a high-resistance amorphous state 4, the metal pattern area 3 is not changed, the composite resonance unit patterns 5-4 are changed back to the resonance unit patterns 5-3, and reverse modification is realized.
Changing the equivalent resonance unit size: referring to fig. 6, the pattern size of the resonant unit of the metal-memory phase change material composite patch-type AFSS prepared on the insulating substrate 1 is modified by adopting the specific steps that the pulse width is not more than nanosecond, and the energy density is 15mJ/cm 2 To 50mJ/cm 2 The pulse laser performs scanning irradiation on an array formed by narrow-ring composite type surface mount type AFSS resonant unit patterns 5-5, so that the irradiated memory phase change material is changed from a high-resistance amorphous state 4 to a low-resistance crystalline state 35, a metal pattern area 3 is not changed, wide-ring composite type surface mount type AFSS resonant unit patterns 5-6 are formed, and similarly, the pulse width is not more than nanosecond, and the energy density is 90mJ/cm 2 To 120mJ/cm 2 The pulse laser scans and irradiates wide-ring composite patch type AFSS resonant unit patterns 5-6 to change the irradiated memory phase-change material from a low-resistance crystalline state 35 into a high-resistance amorphous state 4, a metal pattern area 3 is not changed, the composite resonant unit patterns 5-6 are changed back into resonant unit patterns 5-5 to realize reverse modification, the size of the resonant unit patterns of the metal-memory phase-change material composite slit type AFSS prepared on the insulating base material 1 is modified, and the specific steps are that the pulse width is not more than nanosecond, and the energy density is 15mJ/cm 2 To 50mJ/cm 2 The pulse laser carries out scanning irradiation on an array formed by wide-ring composite type gap AFSS resonant unit patterns 5-7, so that the irradiated memory phase change material is changed from a high-resistance amorphous state 4 to a low-resistance crystalline state 35, a metal pattern area 3 is not changed, and narrow-ring composite type gap AFSS resonant unit patterns 5-8 are formed 2 To 120mJ/cm 2 The pulse laser carries out scanning irradiation on the narrow-ring composite type gap AFSS resonant unit patterns 5-8, so that the irradiated memory phase change material is changed from a low-resistance crystalline state 35 to a high-resistance amorphous state 4, and no occurrence occurs in a metal pattern area 3And changing the composite resonance unit pattern 5-8 to the resonance unit pattern 5-7 to realize reverse modification.
Changing the structural form of the equivalent resonance unit: referring to fig. 7, the pattern structure of the resonant unit of the metal-memory phase change material composite patch-type AFSS prepared on the insulating substrate 1 is modified by adopting the specific steps that the pulse width is not more than nanosecond, and the energy density is 15mJ/cm 2 To 50mJ/cm 2 The pulse laser performs scanning irradiation on an array formed by cross composite type patch type AFSS resonant unit patterns 5-9, so that the irradiated memory phase change material is changed from a high-resistance amorphous state 4 to a low-resistance crystalline state 35, and a metal pattern area 3 is not changed, thereby forming grid line composite type patch type AFSS resonant unit patterns 5-10. Similarly, the pulse width is not more than nanosecond, and the energy density is 90mJ/cm 2 To 120mJ/cm 2 The pulse laser scans and irradiates a 5-10 structure of a grid line composite patch type AFSS resonant unit pattern, so that an irradiated memory phase change film layer is changed from a low-resistance crystalline state to a high-resistance amorphous state, a metal pattern area 3 is not changed, the 5-10 structure of the grid line composite patch type AFSS resonant unit pattern is changed back to a 5-9 structure of a resonant unit pattern, reverse modification is realized, the structural form of the resonant unit pattern of the metal-memory phase change material composite slit type AFSS prepared on an insulating base material 1 is modified, and the specific steps are that the pulse width is not more than nanosecond, and the energy density is 15mJ/cm 2 To 50mJ/cm 2 The pulse laser performs scanning irradiation on an array formed by grid line composite type gap AFSS resonant unit patterns 5-11, so that the irradiated memory phase change material is changed from a high-resistance amorphous state 4 to a low-resistance crystalline state 35, a metal pattern area 3 is not changed, a cross composite type gap AFSS resonant unit pattern 5-12 is formed, and similarly, the pulse width is not more than nanosecond, and the energy density is 90mJ/cm 2 To 120mJ/cm 2 The pulse laser performs scanning irradiation on the cross composite type slit AFSS resonant unit patterns 5-12, so that the irradiated memory phase change material is changed from a low-resistance crystalline state 35 to a high-resistance amorphous state 4, the metal pattern area 3 is not changed, the composite resonant unit patterns 5-12 are changed back to the resonant unit patterns 5-11, and reverse modification is realized.
Control of electromagnetic filtering performance "switch": referring to fig. 8, the resonant cell array function of the metal-memory phase change material composite patch-type AFSS prepared on the insulating substrate 1 is controlled to be on and off, and the specific steps are that the pulse width is not more than nanosecond, and the energy density is 15mJ/cm 2 To 50mJ/cm 2 The pulse laser performs scanning irradiation on an array formed by high-resistance state circular patch type AFSS resonant unit patterns 5-13, so that the irradiated memory phase change material is changed from a high-resistance amorphous state 4 to a low-resistance crystalline state 35 to form low-resistance state circular patch type AFSS resonant unit patterns 5-14, the FSS shows band-stop filtering performance due to a patch type array structure formed by high-conductivity patterns, and similarly, the pulse width is not more than nanosecond, and the energy density is 90mJ/cm 2 To 120mJ/cm 2 The pulse laser scans and irradiates low-resistance state circular ring patch type AFSS resonant unit patterns 5-14 to enable the irradiated memory phase-change material to be changed into a high-resistance amorphous state 4 from a low-resistance crystalline state 35, the resonant unit patterns 5-14 are changed back to resonant unit patterns 5-13 to achieve closing of a filtering function, and the resonant unit array function of the metal-memory phase-change material composite type gap type AFSS prepared on the insulating base material 1 is controlled to be on and off by adopting the specific steps that the pulse width is not more than nanosecond, and the energy density is 15mJ/cm 2 To 50mJ/cm 2 The pulse laser carries out scanning irradiation on an array formed by high-resistance state circular ring composite type gap type AFSS resonant unit patterns 5-15, so that the irradiated memory phase change material is changed from a high-resistance amorphous state 4 to a low-resistance crystalline state 35, a metal pattern area 3 is not changed, and low-resistance state circular ring composite type gap type AFSS resonant unit patterns 5-16 are formed. Similarly, the pulse width is not more than nanosecond and the energy density is 90mJ/cm 2 To 120mJ/cm 2 The pulse laser irradiates the low-resistance state circular ring composite type gap AFSS resonant unit patterns 5-16, so that the irradiated memory phase change material is changed from the low-resistance crystalline state 35 to the high-resistance amorphous state 4, the metal pattern area 3 is not changed, the composite resonant unit patterns 5-16 are changed back to the resonant unit patterns 5-15, and AFS is realizedAnd starting the S function.
The phase change function can be realized by inducing the metal-germanium telluride film composite structure unit through laser:
ultrasonically cleaning the surface of the quartz substrate for 40min by using liquid detergent, acetone and deionized water in sequence, and then blowing the quartz substrate for later use by using nitrogen;
performing direct-current sputtering deposition of metal copper on the quartz in a magnetron sputtering instrument, setting the current to be 0.15A, setting the voltage to be 347V, and setting the deposition time to be 30min to obtain a metal film with the thickness of about 300nm;
patterning and etching the metal film by using a laser three-dimensional etching system to form a metal resonance unit array, wherein a laser light source is a picosecond laser with the wavelength of 1064nm, the power is 1.56W, the scanning repetition frequency is 100KHz, the speed is 1m/s, and the filling interval is 0.01mm;
performing radio frequency sputtering deposition of a germanium telluride film on the prepared metal array sample, wherein the sputtering target is a high-purity germanium telluride target, the sputtering power is 30W, the sputtering time is 20min, and the thickness of the obtained film is 300nm;
patterning and etching the germanium telluride film by using a laser three-dimensional etching system to form a metal-germanium telluride film composite resonance unit array, wherein a laser source is a picosecond laser with the wavelength of 1064nm, the power is 1.4W, the scanning repetition frequency is 150KHz, the speed is 1m/s, and the filling interval is 0.01mm;
scanning and inducing the composite structure unit array by using an ultraviolet picosecond laser with the wavelength of 355nm and a laser scanning system, and adjusting the repetition frequency of the laser to be 100KHz, the pulse width to be 10ps and the energy density to be 32mJ/cm 2 The scanning spot is circular, the scanning speed is 0.5m/s, the filling mode is an orthogonal line, the line spacing is 0.01mm, the scanning frequency is 1 time, and XRD (X-ray diffraction) test is carried out on the memory phase change film layer area of the composite structure sample after the laser action, and the result shows that the laser under the parameter can effectively induce the phase change of the amorphous germanium telluride film in the composite structure into the crystalline state under the condition of not damaging the metal copper;
re-scanning and inducing the metal-germanium telluride film composite resonance unit array by using an ultraviolet picosecond laser with the wavelength of 355nm and a laser scanning systemThe repetition frequency of the regulating laser is 250KHz, the pulse width is 10ps, and the energy density is 94mJ/cm 2 The scanning spot is circular, the scanning speed is 1m/s, the filling mode is an orthogonal line, the line spacing is 0.01mm, the scanning frequency is 1 time, XRD test is carried out on the memory phase change film layer area of the sample after the laser action, the result shows that no characteristic peak exists, and the laser under the parameter can effectively induce the phase change of the crystalline germanium telluride film in the composite structure to be amorphous state under the condition of not damaging metal copper.
Referring to fig. 9-11, the frequency conversion function can be achieved before and after laser induction by the metal-germanium telluride film composite frequency selective surface:
selecting 300mm multiplied by 300mm quartz glass with the thickness of 2mm as a substrate, the dielectric constant of which is 3.75 and the loss tangent of which is 0.0004, depositing a copper film with the thickness of 300nm on the surface of the quartz by adopting a magnetron sputtering technology, carrying out metal material reduction laser scanning etching by using an infrared fiber laser with the wavelength of 1064nm and a laser three-dimensional etching scanning head to form a resonant pattern array shown in the figure 9 (a), wherein the line width w is 0.2mm and the side length l is 5mm, uniformly attaching an amorphous germanium telluride film with the thickness of 300nm on the surface of the array by adopting the magnetron sputtering technology, carrying out laser scanning material reduction etching on the germanium telluride film by using the infrared fiber laser with the wavelength of 1064nm and the laser three-dimensional etching scanning head to form the resonant pattern array shown in the figure 9 (b), wherein the array has a filtering function, and the array has a S-shaped band stop function under the condition of vertical incidence 21 The frequency response curve is shown in fig. 10, the resonance frequency point of the TE polarized wave is 12.254ghz, the resonance frequency point of the tm polarized wave is 12.271GHz, then an infrared fiber laser with a wavelength of 1064nm and a laser three-dimensional scanning system are adopted to perform laser-induced phase change on the AFSS universe, so that the amorphous germanium telluride film is converted into a crystalline state, and the resonance pattern array of fig. 9 (c) is formed, wherein the array has a broadband band-pass filtering function, and the array has an S-band-pass filtering function under a vertical incidence condition 21 The frequency response curve is shown in fig. 11, the resonance frequency point of the TE polarized wave is 12.067ghz, the resonance frequency point of the tm polarized wave is 12.050GHz, and it can be seen that the composite frequency selective surface loaded with the germanium telluride film can realize the effects of resonance frequency change, filter function conversion, and the like before and after laser induced phase change.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still make modifications to the technical solutions described in the foregoing embodiments, or make equivalent substitutions and improvements to part of the technical features of the foregoing embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A frequency conversion method of a metal-memory phase change material composite structure AFSS is characterized by comprising the following steps:
the method comprises the following steps: preparing a metal unit graphic array on an insulating substrate plated with a metal conductive film layer by adopting a pulse laser etching technology to form an FSS (frequency selective surface) resonant pattern and a frequency selective passband, depositing a layer of amorphous memory phase change film on the prepared FSS resonant pattern by adopting a film deposition technology, preparing a composite unit pattern of metal and a memory phase change material by adopting the pulse laser etching technology to realize the preparation of an AFSS frequency selective surface resonant unit array, and depositing a high-transmission protective layer on the surface of a prepared AFSS sample piece;
step two: a three-dimensional pulse laser scanning device is adopted to output a pulse laser beam with a pulse width and energy density in a specific range to rapidly scan the frequency selection surface of the composite structure, induce the memory phase change material to switch between a high resistance state and a low resistance state, change the equivalent conductive size of the composite resonance unit array structure and realize the function of regulating and controlling the electromagnetic transmission performance change of the frequency selection surface.
2. The frequency conversion method for AFSS according to claim 1, wherein the first step uses Cu, al, au, ag, and ITO materials as the metal conductive materials, and the memory phase change material is made of Te, which is represented by GeTe (1-x) (Sb2Te3) x Including GeTe, ge 2 Sb 2 Te 5 ，Ge 3 Sb 2 Te 6 And Sb 2 Te 3 It achieves reversible amorphous-to-crystalline state transition under external excitation, and its optical and electrical constants are changed in the process.
3. The frequency conversion method of the metal-memory phase change material composite structure AFSS according to claim 1, wherein the laser source in the second step adopts a wavelength range of 300-1200nm, a pulse width is not more than nanosecond, and an energy density is 15mJ/cm 2 To 50mJ/cm 2 The laser pulse within the range converts the amorphous a-GeTe into the crystalline c-GeTe with high purity to realize the conversion from the high resistance state to the low resistance state, and the energy density is 90mJ/cm 2 To 120mJ/cm 2 The laser pulse in the range converts the crystalline state c-GeTe into the high-purity amorphous state a-GeTe to realize the conversion from the low resistance state to the high resistance state.
4. The method as claimed in claim 3, wherein the amorphous a-GeTe is transformed into a high purity crystalline c-GeTe, the structure or pattern or size of the composite resonance unit is changed to cause the electromagnetic transmission performance of the frequency selective surface to be changed, the frequency resonance point of the AFSS is changed, and when the crystalline c-GeTe is transformed into the high purity amorphous a-GeTe, the composite resonance unit restores the original structure or pattern or size to cause the frequency resonance point of the AFSS to return to the initial value, thereby implementing the frequency selective surface frequency conversion function.
5. The frequency conversion method for the metal-memory phase change material composite structure AFSS according to the claim 1, wherein the function of implementing the electromagnetic transmission performance variation of the frequency selective surface in the second step can be implemented by:
changing the equivalent resonant cell shape;
changing the size of the equivalent resonance unit;
changing the structural form of the equivalent resonance unit;
the electromagnetic filtering performance is controlled to be switched.
6. When the frequency conversion device of the metal-memory phase change material composite structure AFSS is used for carrying out laser scanning induction processing on the metal-memory phase change material composite structure AFSS prepared on a complex curved surface, the frequency conversion device is characterized by comprising a three-dimensional laser rotation scanning device (8) and a three-dimensional laser revolution scanning device (33), wherein the three-dimensional laser rotation scanning device (8) is used for processing the AFSS on the inner side of the curved surface;
the three-dimensional laser revolution scanning device (33) is used for processing the AFSS on the outer side of the curved surface;
the three-dimensional laser rotary scanning device (8) comprises a pulse laser (9), a laser rotary scanning head (10), a laser rotary scanning head moving mechanism (11) and a control system (12);
the three-dimensional laser revolution scanning device (33) is composed of a pulse laser (9), a laser three-dimensional scanning head and an assembly shell (26) thereof, a laser three-dimensional scanning head moving mechanism (31) and a control system (12).
7. The frequency conversion device of the metal-memory phase change material composite structure AFSS according to claim 6, wherein the laser rotary scanning head (10) comprises a beam expanding collimator set (13), a dynamic focusing system (14), a beam shaping system (15), a focusing feedback system (16), a dichroic mirror (25), and a high-speed rotary deflection mirror system (17);
the dynamic focusing system (14) comprises a focusing mirror group (18) and a voice coil motor linear moving mechanism (19);
the laser rotary scanning head moving mechanism (11) consists of a linear moving motor (22) and a transmission mechanism (23), and the linear moving motor (22) and the transmission mechanism (23) are used for driving the laser rotary scanning head (10) to move back and forth;
high-speed rotatory beat speculum system (17) includes hollow shaft rotating electrical machines (20), reflection lens (21) and beat motor (24), beat motor (24) are used for driving reflection lens (21) swing, the mirror surface center of reflection lens (21) and the axle center and the coincidence of pulse laser optical axis of hollow shaft rotating electrical machines (20).
8. The frequency conversion device of the metal-memory phase change material composite structure AFSS according to claim 6, wherein the focusing feedback system (16) in the laser rotary scanning head (10) determines the focusing status by actively outputting the laser beam and receiving the return light, and the center of the optical axis of the focusing feedback system (16) coincides with the center of the mirror surface of the dichroic mirror (25) and the optical axis of the pulse laser.
9. The frequency conversion device of the metal-memory phase change material composite structure AFSS according to claim 6, wherein the laser three-dimensional scanning head and its assembled housing (26) comprise a beam expanding and collimating lens set (13), a dynamic focusing system (14), a beam shaping system (15), a laser scanning lens set system (27), and a focusing feedback system (28).
10. The frequency conversion device for the metal-memory phase change material composite structure AFSS according to the claim 6, wherein the laser three-dimensional scanning head moving mechanism (31) is capable of driving the laser three-dimensional scanning head and the assembled housing (26) thereof to perform circular and vertical linear movements, and the control system (12) is capable of enabling the pulsed laser (9), the laser three-dimensional scanning head (26) and the laser three-dimensional scanning head moving mechanism (31) to work cooperatively to perform circular scanning or longitudinal curved surface partition scanning of gradual longitudinal movement on the AFSS outside a curved surface.
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