CN111965849A - Controllable chiral structure based on GST phase change material temperature control and control method - Google Patents
Controllable chiral structure based on GST phase change material temperature control and control method Download PDFInfo
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- CN111965849A CN111965849A CN202010872084.3A CN202010872084A CN111965849A CN 111965849 A CN111965849 A CN 111965849A CN 202010872084 A CN202010872084 A CN 202010872084A CN 111965849 A CN111965849 A CN 111965849A
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0136—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour for the control of polarisation, e.g. state of polarisation [SOP] control, polarisation scrambling, TE-TM mode conversion or separation
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Abstract
The invention discloses a controllable chiral structure based on GST phase change material temperature control and a control method. The structure consists of periodic units, and each unit consists of a GST micro-nano structure, a silicon dioxide film and a gold substrate. By preparing a chiral GST array on a silica thin film, the device can be made to exhibit circular dichroism in the near infrared band, and quasi-linear adjustment of the circular dichroism can be achieved by changing the temperature of GST. In addition, by placing a mirror image chiral GST array in the unit structure and controlling the temperature of GST structures of different chiralities, the inversion of circular dichroism can be achieved. Compared with the existing chiral metamaterial structure, the structure has the advantages of simple structure, strong function, large adjustable wavelength range, dynamic adjustment and the like.
Description
Technical Field
The invention relates to a controllable chiral structure based on Ge2Sb2Te5(GST) phase-change material temperature control and a control method.
Background
The phase-change material is a special material with a lattice structure changing along with temperature, and under the direct action of an external electric field or thermal stimulation, the temperature rise in the material can cause the internal structure to be converted from an amorphous state to a crystalline state, and the internal structure is accompanied with a series of material physical properties such as refractive index, conductivity, Young modulus and the like, so that the phase-change material is widely applied to related technologies such as phase-change memories, displays and the like. The GST is a commonly used phase change material, which changes from amorphous to cubic at 150 ℃ and hexagonal at 200 ℃, and the lattice state of the GST material can be stably maintained after the heat source is removed. Notably, GST can be returned from the crystalline state to the amorphous state by heating the GST to the melting point (650 degrees celsius) and rapidly cooling to room temperature. GST can switch between amorphous and crystalline states at speeds up to mhz and is therefore widely used to fabricate dynamically switchable functional devices.
The electric field vector of the circularly polarized light moves along a clockwise or counterclockwise spiral trajectory and is divided into left-handed circular polarization (LCP) or right-handed circular polarization (RCP), which can be decomposed by linearly polarized light of two perpendicular electric field vectors. In a number of applications involving circularly polarized optical fields, there is considerable interest from researchers how to effectively distinguish circularly polarized light of different chiralities and develop spin-dependent optics. If the device has different optical responses to the LCP and RCP excitation fields, circular dichroism can be used to measure the optical chirality of the device, which is generally defined as the difference in absorption of the LCP and RCP excitation fields by the device. Based on artificial metamaterials, researchers design a plurality of micro-nano structures with optical chirality and apply the micro-nano structures to detection of a circularly polarized light field, super absorption and the like. However, many devices rely on metallic materials with three-dimensional complex structures, which places high demands on large-scale fabrication. In addition, the optical correspondence of the device is also influenced by factors such as the structure and the size of the metamaterial, and the practical performance of the device is greatly reduced due to the characteristic that the device cannot be reconstructed.
Disclosure of Invention
The purpose of the invention is as follows: in view of the above prior art, a controllable chiral structure based on GST phase change material temperature control and a control method thereof are provided, which aims to enable the device to exhibit circular dichroism in a near infrared band, and to achieve quasi-linear adjustment of the circular dichroism, and to achieve inversion of the circular dichroism.
The technical scheme is as follows: a controllable chiral structure based on GST phase change material temperature control comprises a gold substrate, a silicon dioxide film positioned on the surface of the gold substrate, and a chiral GST array prepared on the surface of the silicon dioxide film; the unit of the chiral GST array consists of two cuboid GSTs, and the two cuboid GSTs are partially overlapped in the longitudinal direction.
Further, the thickness of the cuboid GST is 140 nanometers, the length is 565 nanometers to 915 nanometers, the width is 160 nanometers, and the length of the two cuboid GSTs which are overlapped in the longitudinal direction is 50 nanometers; the unit transverse period of the chiral GST array is 400 nanometers, and the longitudinal period is between 1.1 micrometers and 1.8 micrometers.
Further, the thickness of the silicon dioxide film is 120 nanometers, and the thickness of the gold substrate is 100 nanometers.
A method of controllable circular dichroism according to said structure, comprising the steps of:
the method comprises the following steps: determining the length of a cuboid GST in a unit of the chiral GST array and the longitudinal period of the unit according to a preset working wavelength; wherein the operating wavelength is between 1.5 microns and 2.4 microns;
step two: uniformly irradiating the structure by using high-power circular polarization laser, wherein the chiral GST array is heated and crystallized by controlling the laser power and the irradiation time, so that the physical state of the chiral GST array is changed, and the resonance wavelength of the structure is subjected to red shift; at the operating wavelength, the circular dichroism of the structure will increase linearly with the temperature of the GST structure, achieving a controllable circular dichroism based on GST temperature control.
A controllable chiral structure based on GST phase change material temperature control comprises a gold substrate, a silicon dioxide film positioned on the surface of the gold substrate, and a mirror image chiral GST array prepared on the surface of the silicon dioxide film; wherein, the unit of mirror image chirality GST array comprises the GST chirality structure of a pair of mirror image, and every GST chirality structure comprises two cuboid GST, two cuboid GST are in vertical partial coincidence.
Further, the thickness of the cuboid GST is 140 nanometers, the length is 565 nanometers to 915 nanometers, the width is 160 nanometers, and the length of the two cuboid GSTs which are overlapped in the longitudinal direction is 50 nanometers; the unit transverse period of the mirror image chiral GST array is 400 nanometers, and the longitudinal period is between 1.1 micrometers and 1.8 micrometers.
Further, the thickness of the silicon dioxide film is 120 nanometers, and the thickness of the gold substrate is 100 nanometers.
A method of flipping circular dichroism according to said structure, comprising the steps of:
the method comprises the following steps: determining the length of a cuboid GST in a unit of a mirror image chiral GST array in the structure and the longitudinal period of the unit according to a preset working wavelength; wherein the operating wavelength is between 1.5 microns and 2.4 microns;
step two: uniformly irradiating the structure by using high-power circularly polarized laser, and crystallizing one chiral GST structure in the mirror image chiral GST array by using different absorption rates of different chiral GST structures in the mirror image chiral GST array to a circularly polarized light field by controlling laser power and irradiation time, wherein the opposite chiral GST structure is still in an uncrystallized state, and the structure shows circular dichroism under the working wavelength;
step three: continuously heating the structure by using high-power circular polarized laser to enable the mirror image chiral GST array to reach a melting point, and rapidly cooling the mirror image chiral GST array by using liquid nitrogen to recover to an amorphous state;
step four: heating the device by adopting circularly polarized laser with the chirality opposite to that in the second step, wherein the crystallization state of the GST chiral structure in the mirror image chiral GST array is opposite to that in the second step, and the structure also shows circular dichroism opposite to that in the second step under the working wavelength;
step five: and repeating the second step to the fourth step to realize the continuous turnover of the circular dichroism of the device.
Has the advantages that:
1. the structure is simple. The device only comprises three layers of GST, silicon dioxide and a gold substrate, and can be manufactured through a modern micro-nano processing technology.
2. Powerful function and can show better circular dichroism under the working wavelength.
3. The controllable working wavelength range is large, and the working wavelength can be regulated and controlled between 1.5 microns and 2.4 microns by regulating the GST length and the longitudinal period in the GST array unit structure.
4. Can be dynamically regulated and controlled. Local temperature control is realized in a high-power circular polarization laser heating mode, so that the conversion of the GST material between an amorphous state and a crystalline state is realized, the resonance wavelength of the whole structure is influenced, and under the working wavelength, the circular dichroism of the device is greatly and linearly increased along with the temperature rise of the GST structure, so that the GST temperature control-based controllable circular dichroism is realized. In addition, circular dichroism flipping based on temperature control can also be achieved.
Drawings
FIG. 1 is a schematic structural view of example 1;
FIG. 2 shows the distribution of energy loss in the XY and XZ planes of the structure of example 1 under RCP irradiation;
FIG. 3 is the trend of circular dichroism with GST temperature in example 1;
FIG. 4 is a schematic structural view of embodiment 2;
FIG. 5 is the energy loss profile of mirror GST in example 2 under LCP and RCP irradiation in the room temperature state;
fig. 6 is a circular dichroism spectrum of the device when the GST structure of left/right chirality in example 2 is in crystalline/amorphous and amorphous/crystalline states, respectively.
Detailed Description
The invention is further explained below with reference to the drawings.
Example 1:
as shown in FIG. 1, a controllable chiral structure based on GST phase change material temperature control comprises a gold substrate 3, a silica thin film 2 located on the surface of the gold substrate 3, and a chiral GST array 1 prepared on the surface of the silica thin film 2. The unit of the chiral GST array 1 consists of two cuboid GSTs, and the two cuboid GSTs are partially overlapped in the longitudinal direction, namely, the unit is a mirror-image asymmetric GST structure.
The rectangular GST has a thickness of 140 nm, a length of 565 nm to 915 nm, a width of 160 nm, and a length of 50 nm overlapped in the longitudinal direction. The unit lateral period of chiral GST array 1 is 400 nm and the longitudinal period is between 1.1 microns and 1.8 microns. The thickness of the silicon dioxide film 2 is 120 nm, and the thickness of the gold substrate 3 is 100 nm. The specific parameters of the length of the rectangular GST and the longitudinal period of the cell are determined by the operating wavelength, and the thickness, width and transverse period of the rectangular GST are independent of the operating wavelength.
In the structure, the chiral GST array realizes local temperature control in a high-power circular polarization laser heating mode, so that the conversion of GST between an amorphous state and a crystalline state is realized, and the method comprises the following steps:
the method comprises the following steps: determining the length of a cuboid GST in a unit of the chiral GST array 1 and the longitudinal period of the unit according to a preset working wavelength; wherein the operating wavelength is between 1.5 microns and 2.4 microns.
Step two: utilize high power circular polarization laser to carry out even irradiation to the structure, through control laser power and irradiation time, chirality GST array 1 intensifies and takes place the crystallization, causes chirality GST array 1 physical state to change for the resonance wavelength of structure takes place the red-shift. At the operating wavelength, the circular dichroism of the structure will increase linearly with the temperature of the GST structure, achieving a controllable circular dichroism based on GST temperature control.
Figure 2 shows the distribution of energy loss in the XY and XZ planes of the structure of example 1 at a GST temperature of 175 degrees under irradiation with RCP operating at a wavelength of 1.8 microns. The operating wavelength can be tuned between 1.5 microns and 2.4 microns by adjusting the length of the cuboid GST in the cell and the longitudinal period of the cell. Taking the operating wavelength of 1.8 microns as an example, the parameters chosen here are a longitudinal period of 1.2 microns and a GST cuboid length of 615 nanometers. It can be seen that most of the energy loss is concentrated in the uppermost chiral GST array, so circularly polarized laser irradiation can effectively heat the GST array. In addition to the above parameters, energy loss is still concentrated in the GST array at other structural parameters and temperatures.
Fig. 3 is a graph of the tendency of circular dichroism of example 1 to vary with GST temperature at an incident wavelength of 1.8 microns. The device is uniformly irradiated by high-power circular polarization laser, and the chiral GST array is heated and crystallized by controlling the laser power and the irradiation time, so that the physical state of a GST layer is changed and the resonance wavelength of the device is red-shifted. The CD of the structure can increase quasi-linearly from 0.03 to 0.74 as the temperature of the GST increases from 20 degrees to 175 degrees.
Example 2:
as shown in fig. 4, a controllable chiral structure based on GST phase change material temperature control includes a gold substrate 3, a silica thin film 2 on the surface of the gold substrate 3, and a mirror chiral GST array 4 prepared on the surface of the silica thin film 2. As shown in the dotted line frame in fig. 4, the unit of the mirror image chiral GST array 4 is composed of a pair of mirror image GST chiral structures, each of which is composed of two cuboid GSTs partially overlapped in the longitudinal direction.
The rectangular GST has a thickness of 140 nm, a length of 565 nm to 915 nm, a width of 160 nm, and a length of 50 nm overlapped in the longitudinal direction. The unit lateral periodicity of the mirror image chiral GST array 4 is 400 nm and the longitudinal periodicity is between 1.1 microns and 1.8 microns. The thickness of the silicon dioxide film 2 is 120 nm, and the thickness of the gold substrate 3 is 100 nm.
The circular dichroism flipping method according to the above structure includes the steps of:
the method comprises the following steps: determining the longitudinal period of a cuboid GST in a unit of a mirror image chiral GST array 4 in the structure and the unit according to a preset working wavelength; wherein the operating wavelength is between 1.5 microns and 2.4 microns.
Step two: the structure is uniformly irradiated by high-power circularly polarized laser, different chiral GST structures in the mirror image chiral GST array 4 have different absorption rates to a circularly polarized light field, one chiral GST structure in the mirror image chiral GST array 4 is crystallized by controlling laser power and irradiation time, the opposite chiral GST structure is still in an uncrystallized state, and the structure shows circular dichroism under working wavelength.
Step three: the structure is continuously heated with a high power circularly polarized laser to bring the mirror image chiral GST array 4 to the melting point and then rapidly cooled with liquid nitrogen to recover the amorphous state.
Step four: and (3) heating the device by using circularly polarized laser with the chirality opposite to that in the second step, wherein the crystallization state of the GST chiral structure in the mirror image chiral GST array 4 is opposite to that in the second step, and the structure also shows opposite circular dichroism to that in the second step at the working wavelength.
Step five: and repeating the second step to the fourth step to realize the continuous turnover of the circular dichroism of the device.
Fig. 5 shows the energy loss distribution of the mirror GST of example 2 under LCP and RCP illumination at room temperature, when the unit in the structure of example 2 has a longitudinal period of 1.2 microns and a rectangular GST length of 615 nm. When the LCP is irradiated, the energy loss is mainly concentrated in the left GST, so the left GST absorbs more energy, is at a higher temperature, and heats up to the crystalline state first. The energy loss is mainly concentrated in the GST on the right when RCP is irradiated, so the GST on the right absorbs more energy and the temperature is increased to the crystalline state first. In addition to the structural parameters shown in the figure, the energy loss of the structure of example 2 at room temperature still has the characteristics under other structural parameters.
Fig. 6 is a circular dichroism spectrum of a device when the GST structure of left/right chirality in the structure of example 2 is in crystalline/amorphous state and amorphous/crystalline state, respectively, and the structural parameters are the same as those in fig. 5. The absorption rates of GST structures with different chiralities to circularly polarized light are different, and by using the characteristic, GST with different chiralities in the unit structure in the structure of embodiment 2 can be in different temperatures and states by heating circularly polarized laser with different rotation directions. By controlling the laser power and irradiation time, a certain chiral GST structure in the mirror chiral GST array will crystallize, while the opposite chiral GST structure is still in the uncrystallized state, and the device will exhibit better circular dichroism at the operating wavelength. If the device is heated by adopting circularly polarized laser with opposite chirality, the crystallization state of the GST structure in the mirror image chiral GST array is opposite to that of the previous device, and the device also shows circular dichroism with opposite sign to that in the second step under the working wavelength, so that the device circular dichroism can be turned.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. The utility model provides a controllable chiral structure based on GST phase change material temperature control which characterized in that: the device comprises a gold substrate (3), a silicon dioxide thin film (2) positioned on the surface of the gold substrate (3), and a chiral GST array (1) prepared on the surface of the silicon dioxide thin film (2); the unit of the chiral GST array (1) is composed of two cuboid GSTs, and the two cuboid GSTs are partially overlapped in the longitudinal direction.
2. The controlled chiral structure of claim 1 based on temperature control of GST phase change material, characterized in that: the thickness of the cuboid GST is 140 nanometers, the length is 565 nanometers to 915 nanometers, the width is 160 nanometers, and the length of the longitudinal superposition of the two cuboids GST is 50 nanometers; the unit transverse period of the chiral GST array (1) is 400 nanometers, and the longitudinal period is between 1.1 micrometers and 1.8 micrometers.
3. The controlled chiral structure of claim 2 based on temperature control of GST phase change material, characterized in that: the thickness of the silicon dioxide film (2) is 120 nanometers, and the thickness of the gold substrate (3) is 100 nanometers.
4. A method of controlled circular dichroism for structures according to any of claims 1 to 3, comprising the steps of:
the method comprises the following steps: determining the length of a cuboid GST in a unit of the chiral GST array (1) and the longitudinal period of the unit according to a preset working wavelength; wherein the operating wavelength is between 1.5 microns and 2.4 microns;
step two: uniformly irradiating the structure by using high-power circular polarization laser, wherein the chiral GST array (1) is heated and crystallized by controlling the laser power and the irradiation time, so that the physical state of the chiral GST array (1) is changed, and the resonance wavelength of the structure is subjected to red shift; at the operating wavelength, the circular dichroism of the structure will increase linearly with the temperature of the GST structure, achieving a controllable circular dichroism based on GST temperature control.
5. The utility model provides a controllable chiral structure based on GST phase change material temperature control which characterized in that: the device comprises a gold substrate (3), a silicon dioxide thin film (2) positioned on the surface of the gold substrate (3), and a mirror image chiral GST array (4) prepared on the surface of the silicon dioxide thin film (2); wherein, the unit of mirror image chirality GST array (4) comprises the GST chiral structure of a pair of mirror image, and every GST chiral structure comprises two cuboid GST, two cuboid GST are in vertical partial coincidence.
6. The controllable chiral structure of claim 5 based on temperature control of GST phase change material, characterized in that: the thickness of the cuboid GST is 140 nanometers, the length is 565 nanometers to 915 nanometers, the width is 160 nanometers, and the length of the longitudinal superposition of the two cuboids GST is 50 nanometers; the unit transverse period of the mirror image chiral GST array (4) is 400 nanometers, and the longitudinal period is between 1.1 micrometers and 1.8 micrometers.
7. The controllable chiral structure of claim 6 based on temperature control of GST phase change material, characterized in that: the thickness of the silicon dioxide film (2) is 120 nanometers, and the thickness of the gold substrate (3) is 100 nanometers.
8. A method of flipping circular dichroism for a structure according to any of claims 5 to 7, comprising the steps of:
the method comprises the following steps: determining the length of a cuboid GST in a unit of a mirror image chiral GST array (4) in the structure and the longitudinal period of the unit according to a preset working wavelength; wherein the operating wavelength is between 1.5 microns and 2.4 microns;
step two: uniformly irradiating the structure by using high-power circularly polarized laser, and crystallizing one chiral GST structure in the mirror image chiral GST array (4) by using different absorption rates of different chiral GST structures in the mirror image chiral GST array (4) to a circularly polarized light field by controlling laser power and irradiation time, wherein the opposite chiral GST structure is still in an uncrystallized state, and the structure shows circular dichroism under the working wavelength;
step three: continuously heating the structure by using high-power circularly polarized laser to enable the mirror image chiral GST array (4) to reach a melting point, and rapidly cooling the mirror image chiral GST array to recover to an amorphous state by using liquid nitrogen;
step four: heating the device by adopting circularly polarized laser with opposite chirality to that in the second step, wherein the crystallization state of the GST chiral structure in the mirror image chiral GST array (4) is opposite to that in the second step, and the structure also shows opposite circular dichroism to that in the second step under the working wavelength;
step five: and repeating the second step to the fourth step to realize the continuous turnover of the circular dichroism of the device.
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| CN114236648A (en) * | 2021-12-20 | 2022-03-25 | 南开大学 | Optical diode based on single-layer external chiral super-surface asymmetric reflection |
| CN115275628A (en) * | 2022-08-24 | 2022-11-01 | 华中科技大学 | Frequency conversion method and device for metal-memory phase change material composite structure AFSS |
| CN116224625A (en) * | 2023-01-18 | 2023-06-06 | 广东工业大学 | Difunctional optical unit and device based on GST phase change material |
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| CN114236648A (en) * | 2021-12-20 | 2022-03-25 | 南开大学 | Optical diode based on single-layer external chiral super-surface asymmetric reflection |
| CN114236648B (en) * | 2021-12-20 | 2023-03-24 | 南开大学 | Optical diode based on single-layer external chiral super-surface asymmetric reflection |
| CN115275628A (en) * | 2022-08-24 | 2022-11-01 | 华中科技大学 | Frequency conversion method and device for metal-memory phase change material composite structure AFSS |
| CN116224625A (en) * | 2023-01-18 | 2023-06-06 | 广东工业大学 | Difunctional optical unit and device based on GST phase change material |
| CN116224625B (en) * | 2023-01-18 | 2023-10-27 | 广东工业大学 | Difunctional optical unit and device based on GST phase change material |
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