CN115275546A - YIG tunable band-stop filter of 3GHz-8GHz - Google Patents
YIG tunable band-stop filter of 3GHz-8GHz Download PDFInfo
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- CN115275546A CN115275546A CN202210856422.3A CN202210856422A CN115275546A CN 115275546 A CN115275546 A CN 115275546A CN 202210856422 A CN202210856422 A CN 202210856422A CN 115275546 A CN115275546 A CN 115275546A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/207—Hollow waveguide filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The application provides a 3GHz-8GHz YIG tunable band stop filter, which comprises a metal resonant cavity, a planar resonant circuit arranged in the metal resonant cavity, and a polytetrafluoroethylene filling layer filled in the metal resonant cavity. The substrate made of YIG material and GGG material is coupled with a micro-strip circuit photo-etched on a Rodgees 5880 substrate to replace the traditional structure of YIG pellets and strip lines, polytetrafluoroethylene is filled in a resonant cavity, and meanwhile, the problems that the uniformity degree of a radio-frequency magnetic field on the micro-strip line is not as high as that of the radio-frequency magnetic field on the strip line and the processing difficulty and the precision of the strip line in a high-low impedance mode are high are solved, and the tuning range covers 3GHz-8GHz.
Description
Technical Field
The application belongs to the technical field of microwave magnetic devices, and particularly relates to a 3GHz-8GHz YIG tunable band-stop filter.
Background
The tunable band-stop filter based on the ferrite material is a very important electronic component in the microwave field and is widely applied in the military field. The existing ferrite materials mainly comprise YIG, gaYIG, biCaVIG, lithium ferrite and barium ferrite. Because the Q value of the microwave resonator made of YIG is much higher than that of the microwave resonators made of other ferrite materials, the microwave resonator made of YIG materials can be widely applied, and a YIG tunable band-stop filter can be made by utilizing the resonance principle. The YIG band elimination filter has wide application, and has the advantages of small volume, capability of multi-octave tuning, high Q value, high linearity, good stability and the like. In military aspect, can use in present electronic war, under the circumstances of control plus bias magnetic field, can extremely fast connect the nimble changeable interfering signal of enemy, replace bulky filter bank simultaneously, realize that the equipment of fighting is miniaturized, convenient to carry for it is more convenient to fight. In the civil communication field, the advantage of miniaturization of the filter bank replacement can still be used in many occasions, such as instruments and meters and UWB receiving systems.
The traditional tunable band-stop filter designed based on YIG material usually uses YIG pellets as resonators to couple and process fine strip lines to achieve the purpose of tunable stop band. For example, the german Teledyne company discloses in 2012 a band-stop filter using a bead structure made of a YIG-based material, the filter mainly comprises resonators having a bead structure made of a YIG-based material and a strip line bent around the bead resonators, and the band-stop filter is tunable under the condition of applying a bias magnetic field. However, the YIG material is difficult to manufacture into a small ball with a small diameter and a round shape, the yield is low, the size of the strip line coupled with the small ball made of the YIG material is small, and the processing difficulty is high; simultaneously, need adjust its crystal orientation when the YIG bobble, the crystal orientation is adjusted the degree of difficulty and is big, and the YIG bobble needs the bracing piece to support, and the structure is complicated, and the assembly degree of difficulty is big, and non-planar structure is more unfavorable for the integration. Meanwhile, the traditional band-stop filter usually adopts transmission line designs such as a strip line, a microstrip line and a coaxial line, has the advantages of planarization, easy assembly, easy integration and the like, and has the defects of single frequency point, untuneability and the like.
Disclosure of Invention
In order to solve the defects of the prior art, the application provides a YIG tunable band stop filter of 3GHz-8GHz, a substrate made of YIG material and GGG material is coupled with a microstrip circuit photoetched on a Rogers 5880 substrate to replace the traditional structure of YIG pellets and strip lines, polytetrafluoroethylene is filled in a resonant cavity, the problems that the uniformity degree of a radio frequency magnetic field on the microstrip line is not equal to that of a radio frequency magnetic field on the strip line and that the strip line in a high-low impedance mode is difficult to process and poor in precision are solved, and the tuning range covers 3GHz-8GHz.
In order to achieve the above object, the present invention employs the following techniques:
a YIG tunable band-stop filter of 3GHz-8GHz comprises a metal resonant cavity, a planar resonant circuit arranged in the metal resonant cavity, and a polytetrafluoroethylene filling layer filled in the metal resonant cavity, wherein:
the planar resonant circuit comprises a substrate and a microstrip circuit photoetching on the central line of one surface of the substrate along the length direction of the substrate;
the microstrip circuit sequentially comprises a first microstrip line, a second microstrip line, a third microstrip line, a fourth microstrip line, a fifth microstrip line, a sixth microstrip line, a seventh microstrip line, an eighth microstrip line and a ninth microstrip line from one end to the other end, and the whole microstrip circuit is symmetrically arranged about the central point of the fifth microstrip line in the length direction;
the first microstrip line is connected with the RF input port, the ninth microstrip line is connected with the RF output port, and the RF input port and the RF output port respectively extend out of two ends of the metal resonant cavity;
one surface of the polytetrafluoroethylene filling layer is arranged at the position of the surface of the substrate, on which the microstrip circuit is photoetched, and is tightly attached to the microstrip circuit, three accommodating grooves are arranged on the polytetrafluoroethylene filling layer in a penetrating manner along the central line of the length direction, the positions of the accommodating grooves respectively correspond to the third microstrip line, the fifth microstrip line and the seventh microstrip line, GGG material substrates are arranged in the accommodating grooves, YIG material films are arranged on one surfaces of the GGG material substrates, a preset interval is formed between the surfaces of the YIG material films and the surfaces of the microstrip circuit, and a preset height difference is formed between the other surfaces of the GGG material substrates and the other surface of the polytetrafluoroethylene filling layer.
The invention has the beneficial effects that:
1. the microstrip circuit is formed on a substrate made of Rogers 5880 by adopting a microstrip form through sputtering photoetching, and compared with a strip line form, the microstrip circuit has the advantages that the processing difficulty and precision are greatly improved, and the microstrip circuit is easy to assemble.
2. Compared with the traditional microstrip line, the air filling in the resonant cavity is changed into polytetrafluoroethylene filling, the substrate dielectric constant is approximately equal to that of polytetrafluoroethylene, the problem that the radio frequency magnetic field uniformity degree on the microstrip line is not as good as that of the strip line is solved, and by the mode, the problems of processing difficulty and precision are solved while the strip line is approximately simulated.
3. By changing the magnitude of the external bias uniform magnetic field, the ferromagnetic resonance frequency of YIG can be changed, the center frequency of the band elimination filter is further changed approximately linearly, and the defect that the center frequency of the traditional filter is not tunable is overcome.
4. The planar structure with compact microstrip lines is adopted, the size is small, MMIC integration is easy, and tuning is convenient. In addition, the YIG material adopts a thin film structure to replace a small ball structure, so that the structural complexity is reduced, and the processing and the assembly are easy.
5. The design research of the tunable band-stop filter which is high in performance and easy to realize is less in the frequency range of 3GHz-8GHz in the prior art, the scheme fills the blank in the aspect, the tuning of a deep stop band and a wide bandwidth is realized, the depth of the maximum stop band is less than-60 dB, and the 3dB bandwidth is more than 50MHz.
Drawings
Figure 1 is a first perspective view of a planarized resonator circuit and a polytetrafluoroethylene fill layer of an embodiment of the present application.
Figure 2 is a second perspective view of the planarized resonator circuit and a polytetrafluoroethylene fill layer of an embodiment of the present application.
Figure 3 is a perspective exploded view of a planarized resonator circuit and a teflon filled layer of an embodiment of the present application.
Fig. 4 is a structural view of a planarized resonator circuit, GGG material substrate, YIG material film of the embodiment of the present application.
Figure 5 is a cross-sectional view of a planarized resonator circuit and a teflon filled layer of an embodiment of the present application.
Fig. 6 is an enlarged view of a portion a in fig. 5.
FIG. 7 shows the result of a YIG tunable band-stop filter with an applied bias uniform magnetic field strength of 2025 oersted according to an embodiment of the present application.
FIG. 8 shows the results of a YIG tunable bandstop filter of an embodiment of the present application with an applied bias uniform magnetic field of strength 1265 Oe.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings, but the described embodiments of the present invention are a part of the embodiments of the present invention, not all of the embodiments of the present invention.
The embodiment of the application provides a YIG tunable band-stop filter with a frequency of 3GHz-8GHz, which is shown in fig. 1-6 and comprises a metal resonant cavity, a planar resonant circuit arranged in the metal resonant cavity and a polytetrafluoroethylene filling layer 2 filled in the metal resonant cavity.
One end of the planarization resonant circuit is connected with an RF input port 3 extending out of one end of the metal resonant cavity, and the other end of the planarization resonant circuit is connected with an RF output port 4 extending out of the other end of the metal resonant cavity.
The planar resonant circuit comprises a substrate 1 and a microstrip circuit 11 optically etched on a central line of one surface of the substrate 1 along the length direction of the substrate 1. The substrate 1 is a Rogers 5880 (Rogers RT/duroid 5880) substrate. The microstrip circuit belongs to a step impedance circuit, is in a high-low impedance microstrip line series connection form, is similar to a sugarcoated haw string in appearance, and the microstrip circuit 11 sequentially comprises a first microstrip line 111, a second microstrip line 112, a third microstrip line 113, a fourth microstrip line 114, a fifth microstrip line 115, a sixth microstrip line 116, a seventh microstrip line 117, an eighth microstrip line 118 and a ninth microstrip line 119 which are sequentially connected from one end to the other end. The first microstrip line 111 is connected to the RF input port 3, and the ninth microstrip line 119 is connected to the RF output port 4.
The entire microstrip circuit 11 is arranged symmetrically with respect to the lengthwise center point of the fifth microstrip line 115. Specifically, the first microstrip line 111 and the ninth microstrip line 119, the second microstrip line 112 and the eighth microstrip line 118, the third microstrip line 113 and the seventh microstrip line 117, and the fourth microstrip line 114 and the sixth microstrip line 116 are respectively and symmetrically arranged with respect to the fifth microstrip line 115.
The length direction dimensions of the first microstrip line 111, the third microstrip line 113 and the fifth microstrip line 115 are greater than the width direction dimensions, the width direction dimensions of the first microstrip line 111 are greater than the width direction dimensions of the third microstrip line 113 and the fifth microstrip line 115, and the width direction dimensions of the third microstrip line 113 and the fifth microstrip line 115 are the same; the length direction dimensions of the second microstrip line 112 and the fourth microstrip line 114 are smaller than the width direction dimension, and the width direction dimension of the second microstrip line 112 is smaller than the width direction dimension of the fourth microstrip line 114.
One surface of the polytetrafluoroethylene filling layer 2 is arranged at one surface of the substrate 1, which is photoetched with the microstrip circuit 11, and is tightly attached to the microstrip circuit 11; port accommodating grooves 20 are formed in two ends of the polytetrafluoroethylene filling layer 2 and are respectively used for accommodating the sections of the RF input port 3 and the RF output port 4 which are positioned in the metal resonant cavity; three containing grooves 21 are arranged on the polytetrafluoroethylene filling layer 2 in a penetrating manner along the central line of the length direction, the positions of the containing grooves 21 respectively correspond to a third microstrip line 113, a fifth microstrip line 115 and a seventh microstrip line 117, a GGG material substrate 5 is arranged in each containing groove 21, a YIG material film 6 is arranged on one surface of the GGG material substrate 5, and the YIG material film 6 is made of ferrite material.
The YIG material film 6 has a predetermined distance from the surface of the microstrip circuit 11, and the other surface of the GGG material substrate 5 has a predetermined height difference from the other surface of the polytetrafluoroethylene filling layer 2.
In the projection direction, the YIG material films 6 are respectively located at the longitudinal centers of the third microstrip line 113, the fifth microstrip line 115 and the seventh microstrip line 117.
Under the condition that the intensity of the applied bias magnetic field is 0 oersted, when a signal is input from the first microstrip line 111 through the RF input port 3, passes through the microstrip circuit 11 and is output from the ninth microstrip line 119 through the RF output port 4, the circuit presents a low-pass characteristic until the frequency is 12 GHz; when an input signal with the same frequency as the magnetic moment precession frequency generated by the YIG material under the condition of an external bias magnetic field is input from the first microstrip line 111 and an output signal is output from the ninth microstrip line 119, the ferrite material is excited to generate a ferromagnetic resonance phenomenon, and at the moment, the ferrite material continuously receives the action of a radio frequency magnetic field generated by the input signal and precesses in an undamped way, at the moment, the ferrite material absorbs a large amount of energy, and a stop band with a certain bandwidth and stop band depth is realized in a pass band presenting a low-pass characteristic; with the change of the intensity of the external bias magnetic field, the center frequency of the ferromagnetic resonance of the ferrite material is changed, and the purpose that the center frequency of the stop band is adjustable in the pass band of the low-pass filter is achieved.
When a uniform bias magnetic field 2025 oersted is applied, the obtained result is shown in fig. 7, a larger stop band bandwidth is generated at the center frequency corresponding to the bias magnetic field, the 3dB bandwidth is 100MHz, and the maximum stop band depth reaches-58 dB;
when a uniform bias magnetic field 1265 oersted is applied, the obtained result is shown in fig. 8, the stopband bandwidth generated at the center frequency corresponding to the bias magnetic field is 50MHz as 3dB bandwidth, and the maximum stopband depth reaches-43 dB;
when the strength of the external bias uniform magnetic field is changed from 1012 Oe to 2531 Oe, the filter can be tuned in the range of 3GHz to 8GHz.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and it is apparent that those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.
Claims (8)
1. A YIG tunable band-stop filter with a frequency of 3GHz-8GHz, which is characterized by comprising a metal resonant cavity, a planar resonant circuit arranged in the metal resonant cavity, and a polytetrafluoroethylene filling layer (2) filled in the metal resonant cavity, wherein:
the planar resonant circuit comprises a substrate (1) and a microstrip circuit (11) which is photoetched on the central line of one surface of the substrate (1) along the length direction of the substrate (1);
the microstrip circuit (11) sequentially comprises a first microstrip line (111), a second microstrip line (112), a third microstrip line (113), a fourth microstrip line (114), a fifth microstrip line (115), a sixth microstrip line (116), a seventh microstrip line (117), an eighth microstrip line (118) and a ninth microstrip line (119) which are connected in sequence from one end to the other end, and the whole microstrip circuit (11) is symmetrically arranged about the central point of the fifth microstrip line (115) in the length direction;
the first microstrip line (111) is connected with the RF input port (3), the ninth microstrip line (119) is connected with the RF output port (4), and the RF input port (3) and the RF output port (4) respectively extend out of two ends of the metal resonant cavity;
one side of the polytetrafluoroethylene filling layer (2) is arranged at one side of the substrate (1) where the microstrip circuit (11) is photoetched and is tightly attached to the microstrip circuit (11), three accommodating grooves (21) are formed in the polytetrafluoroethylene filling layer (2) in a penetrating mode along the center line of the length direction, the positions of the accommodating grooves (21) respectively correspond to a third microstrip line (113), a fifth microstrip line (115) and a seventh microstrip line (117), a GGG material substrate (5) is arranged in each accommodating groove (21), a YIG material film (6) is arranged on one side of the GGG material substrate (5), a preset distance is formed between the surface of the YIG material film (6) and the surface of the microstrip circuit (11), and a preset height difference is formed between the other side of the GGG material substrate (5) and the other side of the polytetrafluoroethylene filling layer (2).
2. YIG tunable band-stop filter at 3GHz-8GHz according to claim 1, characterized in that both ends of the PTFE filler layer (2) are provided with port accommodating grooves (20) for accommodating the sections of the RF input port (3) and the RF output port (4) in the metal resonator.
3. The YIG tunable band-stop filter at 3GHz-8GHz according to claim 1, characterized in that the substrate (1) is a Rogers 5880 substrate.
4. The YIG tunable band-stop filter at 3GHz-8GHz according to claim 1, characterized in that each YIG material film (6) is correspondingly positioned at the center of the third microstrip line (113), the fifth microstrip line (115) and the seventh microstrip line (117) in the length direction in the projection direction.
5. The YIG tunable band-stop filter of 3GHz-8GHz according to claim 1, characterized in that the first microstrip line (111) and the ninth microstrip line (119), the second microstrip line (112) and the eighth microstrip line (118), the third microstrip line (113) and the seventh microstrip line (117), and the fourth microstrip line (114) and the sixth microstrip line (116) are respectively arranged symmetrically with respect to the fifth microstrip line (115).
6. The YIG tunable band-stop filter at 3GHz-8GHz according to claim 1, characterized in that the length direction dimension of the first microstrip line (111), the third microstrip line (113) and the fifth microstrip line (115) is larger than the width direction dimension, the width direction dimension of the first microstrip line (111) is larger than the width direction dimension of the third microstrip line (113) and the fifth microstrip line (115), and the width direction dimensions of the third microstrip line (113) and the fifth microstrip line (115) are the same.
7. The YIG tunable band-stop filter of 3GHz-8GHz as claimed in claim 1, characterized in that the length direction dimension of the second microstrip line (112) and the fourth microstrip line (114) is smaller than the width direction dimension, and the width direction dimension of the second microstrip line (112) is smaller than the width direction dimension of the fourth microstrip line (114).
8. The YIG tunable band-stop filter of 3GHz-8GHz as claimed in claim 1, wherein the YIG material film (6) is made of ferrite material.
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| CN2022105188280 | 2022-05-13 | ||
| CN202210518828.0A CN114744387A (en) | 2022-05-13 | 2022-05-13 | YIG tunable band-stop filter of 3GHz-8GHz |
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| CN115275546A true CN115275546A (en) | 2022-11-01 |
| CN115275546B CN115275546B (en) | 2023-05-05 |
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| CN202210856422.3A Active CN115275546B (en) | 2022-05-13 | 2022-07-21 | YIG tunable band-stop filter of 3GHz-8GHz |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115911797A (en) * | 2023-03-10 | 2023-04-04 | 成都威频科技有限公司 | Up-down coupling adjustable band-pass filter |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115313002B (en) * | 2022-08-17 | 2023-06-27 | 成都威频科技有限公司 | 3GHz-26.5GHz ultra-wideband YIG tunable band-stop filter |
| CN115332745B (en) * | 2022-08-17 | 2023-06-27 | 成都威频科技有限公司 | Wide stop band YIG tunable band-stop filter |
| CN115863946B (en) * | 2023-03-03 | 2023-07-18 | 成都威频科技有限公司 | High-isolation adjustable band-pass filter |
| CN116053738B (en) * | 2023-03-06 | 2023-08-08 | 成都威频科技有限公司 | Band-pass filter with adjustable wide bandwidth |
| CN116526104B (en) * | 2023-07-04 | 2023-11-03 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | Planarization YIG coupled resonance structure based on 3D integration process |
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| CN114744387A (en) | 2022-07-12 |
| CN115275546B (en) | 2023-05-05 |
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