CN116526104B - Planarization YIG coupled resonance structure based on 3D integration process - Google Patents
Planarization YIG coupled resonance structure based on 3D integration process Download PDFInfo
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- CN116526104B CN116526104B CN202310808890.8A CN202310808890A CN116526104B CN 116526104 B CN116526104 B CN 116526104B CN 202310808890 A CN202310808890 A CN 202310808890A CN 116526104 B CN116526104 B CN 116526104B
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 230000008569 process Effects 0.000 title claims abstract description 37
- 230000010354 integration Effects 0.000 title claims abstract description 19
- 230000008878 coupling Effects 0.000 claims abstract description 56
- 238000010168 coupling process Methods 0.000 claims abstract description 56
- 238000005859 coupling reaction Methods 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 21
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 description 57
- 239000008188 pellet Substances 0.000 description 10
- 230000000087 stabilizing effect Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000005162 X-ray Laue diffraction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000005350 ferromagnetic resonance Effects 0.000 description 3
- 230000005291 magnetic effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2/00—Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00
- H03H2/001—Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 comprising magnetostatic wave network elements
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The application discloses a planar YIG coupling resonance structure manufactured based on a 3D integration process, which belongs to the technical field of microwave devices and comprises a substrate and YIG single crystals, wherein the YIG single crystals are disc-shaped and embedded in a cavity of the substrate, each YIG single crystal corresponds to two coupling straight lines, and the coupling straight lines are arranged on the substrate; the coupling straight line is arranged in the cavity of the substrate through a three-dimensional (3D) integration process such as an LTCC process, an HTCC process or an MEMS process and the like; the application can obviously improve the production efficiency of YIG devices, reduce the cost, improve the consistency of products, reduce the volume, the weight and the power consumption of YIG filters and YIG oscillators, and realize the integration with other devices.
Description
Technical Field
The application relates to the technical field of microwave devices, in particular to a planarized YIG coupling resonance structure manufactured based on a 3D integration process.
Background
In modern communication systems and high-end microwave devices, microwave devices based on YIG resonators are often used due to the high requirements for restoring the transmitted information. This is because the quality factor Q is high and the phase noise is good. The basic principle is ferromagnetic resonance, and compared with other coupled resonance structures, the tuning frequency bandwidth is wide, the linearity is good, and the out-of-band suppression is high. Therefore, YIG resonators are often used to fabricate filters, high-end signal sources, and the like.
The conventional coupling structure is shown in fig. 1, the coupling ring 1 is in an omega shape and is often formed by manual winding, and due to the artificial influence factors in the production process, the consistency of the coupling ring is low, and finally, the coupling ring is likely to be screened, so that the working procedures are increased, the qualification rate is reduced, and the manual production efficiency is low and the cost is high.
Second, for more complex coupling rings, a more experienced operator is also required. In the final debugging process, the coupling ring is sometimes readjusted to accommodate the entire system.
In addition, YIG pellets are affected by the anisotropy field of the material and the change in the anisotropy field with temperature, and the ferromagnetic resonance frequencies in different directions and at different temperatures are not uniform under the same bias magnetic field. YIG material has a temperature stabilizing axis; however, YIG pellets are difficult to identify using the Laue orientation method due to isotropy. The YIG ball must therefore calibrate the rotation axis through two easy magnetization axes (not calibrated because of the need to be shown in the calibration instrument or in the ball with the cue, and therefore no reference in fig. 1), and finally determine the temperature stability axis by looking at the temperature drift of the resonance frequency by heating, which is complex and inefficient.
At present, the YIG oscillator and the YIG filter are manufactured mainly in a mode of machining accessories and manually debugging, and the filters and the oscillators are required to be manually assembled and debugged to be qualified after being machined, such as bonding ceramic substrates, gold wire bonding, bonding microwave transistors, winding coupling rings, bonding YIG pellets, searching for a temperature stabilizing shaft of the YIG pellets and the like, so that the machining difficulty is greatly increased, the working efficiency is reduced, the consistency of products cannot be guaranteed, the integration degree of the products is low, and the products are difficult to integrate with silicon-based devices.
In order to solve the problems, the Chinese patent application 201610303325.6, the MEMS magnetic tuning YIG band-pass filter and the manufacturing method adopt the MEMS technology to manufacture the YIG band-pass filter, but the application adopts the traditional YIG pellets, and the pellets are difficult to form a preparation cavity and difficult to orient in the MEMS technology and the LTCC technology.
In addition, the coupling resonance structure of the ultra-wideband YIG electrically tunable filter based on LTCC disclosed in the Chinese patent application 201810662161.5 adopts an LTCC technology, but the coupling structure of the application is the same as the traditional YIG coupling structure, and is still a YIG ball and coupling ring structure, and at least the following problems exist: determining the YIG pellet temperature stabilization axis is relatively complex and cumbersome; there is also a trouble of processing the coupling ring in LTCC.
Disclosure of Invention
The application aims to provide a method for solving the problems, which adopts 3D integration technology (such as LTCC, HTCC and MEMS technology) to realize the planarization of the YIG resonance coupling structure, improves the production efficiency, reduces the cost, improves the product consistency, and can also reduce the volume, the weight and the power consumption of a YIG filter and a YIG oscillator to realize integration.
The technical scheme adopted for solving the technical problems is as follows:
the utility model provides a planarization YIG coupling resonance structure based on 3D integrated process is made, includes base plate and YIG single crystal, YIG single crystal is discoid to embedded in the cavity of base plate, every YIG single crystal corresponds two coupling straight lines, the coupling straight line set up in on the base plate.
The application adopts conjugate coupling, namely, the two coupling structures are coupled or correlated through the ferromagnetic resonance of the middle YIG single crystal; the traditional annular coupling ring structure is canceled, and a linear coupling structure is adopted; YIG single crystal adopts a disk form, and the Z-axis direction or the vertical direction of the disk is the temperature stabilizing axis direction.
Alternatively, the coupling line structure may be a transmission line.
Preferably, the transmission line is a 50 ohm transmission line.
The transmission line of the present application may be a microstrip line, a strip line, a coplanar waveguide, or the like.
Alternatively, the coupling lines are located above and below the YIG disk, respectively.
Alternatively, the coupling lines are all located above the YIG disk.
Alternatively, the coupling lines are all located below the YIG disk.
Alternatively, the two coupling lines intersect at an angle, in an orthogonal manner and in a non-orthogonal manner. Preferably, the two coupling lines intersect in a generally orthogonal manner.
Alternatively, YIG disk thickness may be adjusted as appropriate.
Alternatively, YIG disk diameter may be adjusted as appropriate.
Alternatively, the YIG single crystal may be a square block. Preferably, the Z-axis direction of the square block is a temperature stabilizing axis.
Alternatively, the process may employ a low temperature co-fired ceramic (LTCC) mode, with ceramic substrates having a thickness on the order of microns.
Alternatively, the process may employ a high temperature co-fired ceramic (HTCC) mode, with ceramic substrates having a thickness on the order of microns.
Alternatively, the process May Employ Microelectromechanical Systems (MEMS) mode, with silicon substrate thickness on the order of microns.
Alternatively, the resonant mode has n-level resonance, including the two modes described in fig. 3 and 4.
Another object of the present application is to provide a YIG filter, which is a YIG band-pass filter, and the YIG filter includes the above-mentioned planarized YIG coupled resonance structure manufactured based on a 3D integration process.
It is a third object of the present application to provide a YIG oscillator comprising the above-mentioned planarized YIG coupled resonant structure fabricated based on a 3D integration process.
For YIG differential oscillators, as shown in FIG. 5. Differential oscillators due to the differential circuit topology, the effects of all reactive elements (e.g., bond wires) are eliminated, which can limit bandwidth by contributing open loop phase shifts. The open loop phase shift is also related to the angle between the two coupling lines, the high frequency phase shift of the transistor, etc. Therefore, the operating frequency range of the differential oscillator is wide.
In addition, when the oscillation frequency is higher than the Ku band, parasitic effects of the package couple energy to the YIG single crystal, resulting in poor phase noise. For a differential oscillator, the oscillating current is just in YIG coupling mechanism, the coupling is weaker, the oscillator works near the unloaded Q value, and the phase noise is better. Therefore, the differential oscillator is particularly suitable for the design scheme of the broadband low-phase noise YIG oscillator.
While the traditional method needs to orient one by one, the application can orient in batches by utilizing the Laue orientation method, and the efficiency is obviously improved.
Compared with the Chinese patent application 201610303325.6, the differential YIG oscillator is simple in structure, beneficial to processing and preparation and applicable to differential YIG oscillators.
Compared with the Chinese patent application 201810662161.5, the disk type YIG single crystal determined by the temperature stabilizing shaft is utilized, so that the complexity and the trouble of determining the temperature stabilizing shaft of the YIG pellet by the traditional process are avoided; and secondly, the application adopts a microstrip line type coupling straight line, thereby avoiding the trouble of processing a coupling ring in the LTCC.
Compared with the prior art, the application has the advantages that:
the linear coupling structure and the oriented YIG disc are adopted, so that the structure is simple, and the design complexity and the secondary problems caused by the design are avoided.
By adopting the 3D integration process, once the process parameters are determined, the subsequent manual debugging is less, thereby being beneficial to mass production and improving the consistency of products.
Compared with the traditional YIG pellets and coupling rings, the linear coupling structure and the YIG single crystal disc are adopted, the air gap is more flattened, the air gap is reduced by more than 50% compared with the traditional YIG pellets and coupling rings, the device volume and the power consumption can be reduced by more than 30%, and the miniaturization and the low power consumption of the YIG band-pass filter and the YIG differential oscillator are facilitated. MEMS, LTCC and HTCC processes are adopted, so that YIG devices and other devices can be integrated.
Drawings
Fig. 1 is a schematic diagram of a conventional YIG resonator structure;
FIG. 2 is a schematic diagram of a YIG resonance structure according to the present application;
FIG. 3 is a schematic diagram of a 4-stage resonant mode structure of a YIG band-pass filter according to the present application;
FIG. 4 is a schematic diagram of a 3-stage resonant mode structure of a YIG band-pass filter according to the present application;
FIG. 5 is a schematic diagram of a YIG differential oscillator circuit according to the present application;
FIG. 6 is a top view of YIG resonant structure according to the application;
fig. 7 is a side view of a single layer substrate with a straight coupling line in accordance with the present application.
In the figure: 1. a coupling ring; 201. YIG single crystal; 211. a transmission line a; 212. a transmission line b; 221. A substrate a; 222. a substrate b; 301. YIG disc a; 302. YIG disc b; 303. YIG discs c, 304, YIG disc d; 305. YIG disc e; 306. YIG disc f; 307. YIG disc g; 311. a transmission line c; 312. a transmission line d; 313. a transmission line e; 314. a transmission line f; 315. a transmission line g; 316. a transmission line h; 317. a transmission line i; 318. a transmission line j; 319. a transmission line k; 401. YIG disc h; 411. a transmission line l; 412. a transmission line m; 421. a transistor a; 422. a transistor b; 511. a transmission line n; 521. and a substrate c.
Description of the embodiments
The application will be further described with reference to the accompanying drawings.
Examples:
the embodiment provides a YIG conjugated coupling resonance structure based on a 3D integration process, as shown in FIG. 2: by adopting the coupling linear mode, the circular polarization high-frequency magnetic field can be generated in the transverse axis direction. The coupling line adopts a transmission line (as described above, the transmission line of the present application may be a microstrip line, a strip line, or a coplanar waveguide, etc., and the transmission line of this embodiment is a microstrip line), specifically, the transmission line a211 and the transmission line b212 are respectively on the lower surface of the substrate a221 and the upper surface of the substrate b 222; the transmission lines a211 and b212 are formed on the above substrate by printing the conventional conductive paste well known in the art, thereby reducing solder joints and shortening wiring. The characteristic impedance of the transmission line is matched with the impedance of radio frequency common equipment by changing the parameters of the transmission line and dielectric materials (for example, the dielectric materials are ferro A6M, the dielectric constant is 5.9, the thickness h=0.8 mm, the line width of the transmission line is 1.2mm, the materials are gold or silver paste, and the thickness is about 0.01mm, so that the transmission line with the impedance of 50 ohms is formed finally).
The middle YIG single crystal 201 adopts a disk-like shape, and the diameter and height of the disk can be determined by practical requirements. The axial direction of the vertical disc is the [0813] direction of the YIG single crystal temperature stabilization axis by the Laue orientation. In the implementation process, a large YIG single crystal is firstly subjected to Laue orientation in the [0813] direction, and then is cut, ground and chemically polished.
FIG. 3 is a coupled resonance structure of a 4-stage resonant YIG band-pass filter based on a 3D integration process, in which YIG disks a301, YIG disk b302, YIG disk c303, YIG disk D304 oriented along a temperature stabilizing axis are located in cavities in a multilayer substrate, a transmission line c311, a transmission line e313, a transmission line g315 are located under the four YIG disks, and a transmission line D312 and a transmission line f314 are located over the four YIG disks; transmission line c311, transmission line e313, transmission line g315 orthogonally intersect transmission line d312 and transmission line f 314.
Fig. 4 shows another coupled resonance structure of a 3-stage resonant YIG band-pass filter based on a 3D integration process, in which YIG discs e305, YIG discs f306, and YIG discs g307 with oriented temperature stabilizing axes are located in cavities of a multilayer substrate, transmission line h316 is below YIG discs e305, YIG discs f306, and YIG discs g307, and transmission line i317, transmission line j318, and transmission line k319 are above YIG discs e305, YIG discs f306, and YIG discs g307, respectively.
Fig. 5 is a schematic diagram of a circuit topology of a YIG differential oscillator according to the present application, in which a YIG disc h401 with an oriented temperature stabilizing axis is located in a cavity in a multi-layer substrate, a coupling transmission line l411 and a transmission line m412 are located above the YIG disc h401, the transmission line l411 intersects with the transmission line m412 but does not contact with the transmission line m412, and an angle between the transmission line l411 and the transmission line m412 depends on a vibration starting condition, and a phase including a contribution of an angle between the transmission line l411 and the transmission line m412 is generally required to be n times of 360 °.
The transmission line l411 is connected to the bases of the transistor a421 and the transistor b422, the transmission line m412 is connected to the collectors of the transistor a421 and the transistor b422, the transistors a421 and b422 are the same, VBB is a base-applied voltage, and Re is a feedback resistor.
Fig. 6 and 7 are a top view of a conjugated resonator in the present application and a side view of a single-layer substrate with a straight coupling line in the present application, respectively. The thickness of the substrate c521 is 100 μm, and the transmission line n511 can be matched to 50 ohm characteristic impedance according to dielectric constant, dielectric thickness, transmission line width, etc.
In the application, the transmission line based on the LTCC/HTCC process is manufactured by adopting the prior known printing process, and the transmission line based on the MEMS process is manufactured by adopting the prior known etching process.
The foregoing is illustrative only and is not intended to limit the present application, and any modifications, equivalents, improvements, etc. made within the spirit and principles of the present application should be included in the scope of the present application, including but not limited to 3D integration processes, conjugated coupled resonant structures, etc.
Claims (6)
1. A planarization YIG coupled resonance structure based on 3D integrated process makes, includes base plate and YIG single crystal, its characterized in that: the YIG single crystals are disc-shaped and embedded in the cavity of the substrate, each YIG single crystal corresponds to two coupling straight lines, and the coupling straight lines are arranged on the substrate; each YIG single crystal is positioned between two coupling straight lines or above two coupling straight lines or below two coupling straight lines; the two coupling lines corresponding to each YIG single crystal vertically intersect or non-vertically intersect.
2. The planarized YIG coupled resonant structure of claim 1, wherein: the coupling lines are disposed within the cavity of the substrate through a 3D integration process.
3. The planarized YIG-coupled resonant structure of claim 2, wherein: the 3D integration process is any one of an LTCC process, an HTCC process, or a MEMS process.
4. A planarized YIG coupled resonant structure made based on 3D integration process as defined in claim 3, wherein: the YIG monocrystals are embedded in a cavity of a three-dimensional stacked structure formed by the ceramic substrate and sintered into a whole through an LTCC or HTCC process.
5. The planarized YIG coupled resonant structure of claim 1, wherein: the substrate is a ceramic substrate or a silicon substrate.
6. The planarized YIG-coupled resonant structure of claim 5, wherein: the coupling straight line is printed on the ceramic substrate by adopting a printing technology; or the coupling straight line is etched on the silicon substrate by adopting an etching process.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310808890.8A CN116526104B (en) | 2023-07-04 | 2023-07-04 | Planarization YIG coupled resonance structure based on 3D integration process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310808890.8A CN116526104B (en) | 2023-07-04 | 2023-07-04 | Planarization YIG coupled resonance structure based on 3D integration process |
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| CN116526104B true CN116526104B (en) | 2023-11-03 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4600906A (en) * | 1982-12-03 | 1986-07-15 | Raytheon Company | Magnetically tuned resonant circuit wherein magnetic field is provided by a biased conductor on the circuit support structure |
| US4857871A (en) * | 1988-10-31 | 1989-08-15 | Harris David L | Magnetic field-tunable filter with plural section housing and method of making the same |
| US5221912A (en) * | 1991-10-24 | 1993-06-22 | Keane William J | YIG tuned band reject filter for 2-18 GHz with full one-quarter wavelength RF coupling loops |
| DE69904783D1 (en) * | 1998-06-30 | 2003-02-13 | Advantest Corp | YIG oscillator and its manufacturing process |
| CN101841312A (en) * | 2010-05-07 | 2010-09-22 | 中国电子科技集团公司第九研究所 | YIG harmonic oscillator, YIG oscillator and manufacturing methods thereof |
| CN105914437A (en) * | 2016-05-10 | 2016-08-31 | 西南应用磁学研究所 | MEMS magnetic tuning YIG band pass filter and manufacturing method |
| CN108767412A (en) * | 2018-06-25 | 2018-11-06 | 中国电子科技集团公司第四十研究所 | A kind of ultra wide band YIG electrically tunable filter coupled resonance structures based on LTCC |
| CN114744387A (en) * | 2022-05-13 | 2022-07-12 | 成都威频科技有限公司 | YIG tunable band-stop filter of 3GHz-8GHz |
-
2023
- 2023-07-04 CN CN202310808890.8A patent/CN116526104B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4600906A (en) * | 1982-12-03 | 1986-07-15 | Raytheon Company | Magnetically tuned resonant circuit wherein magnetic field is provided by a biased conductor on the circuit support structure |
| US4857871A (en) * | 1988-10-31 | 1989-08-15 | Harris David L | Magnetic field-tunable filter with plural section housing and method of making the same |
| US5221912A (en) * | 1991-10-24 | 1993-06-22 | Keane William J | YIG tuned band reject filter for 2-18 GHz with full one-quarter wavelength RF coupling loops |
| DE69904783D1 (en) * | 1998-06-30 | 2003-02-13 | Advantest Corp | YIG oscillator and its manufacturing process |
| CN101841312A (en) * | 2010-05-07 | 2010-09-22 | 中国电子科技集团公司第九研究所 | YIG harmonic oscillator, YIG oscillator and manufacturing methods thereof |
| CN105914437A (en) * | 2016-05-10 | 2016-08-31 | 西南应用磁学研究所 | MEMS magnetic tuning YIG band pass filter and manufacturing method |
| CN108767412A (en) * | 2018-06-25 | 2018-11-06 | 中国电子科技集团公司第四十研究所 | A kind of ultra wide band YIG electrically tunable filter coupled resonance structures based on LTCC |
| CN114744387A (en) * | 2022-05-13 | 2022-07-12 | 成都威频科技有限公司 | YIG tunable band-stop filter of 3GHz-8GHz |
Non-Patent Citations (3)
| Title |
|---|
| Tunable Coupled Microstrip Line Isolator By Oblique Magnetization;Sliiuitlii Suhbiali 等;《2002 3rd International Conference on Microwave and Millimeter Wave Technology Proceedings》;第1043-1046页 * |
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| 磁可调滤波器用YIG 铁氧体的制备研究;吕浩林;《全国优秀硕士学位论文全文数据库》(第5期);第3-4章 * |
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