KR960006463B1 - Ferromagnetic resonance device and filter device - Google Patents

Abstract

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Description

Ferromagnetic resonance device and filter device

1 is a cross-sectional view of a preferred embodiment of the present invention.

2 is an exploded view of the body of the device shown in FIG.

3 is a graph showing filter characteristics against the frequency of the preferred embodiment.

4 is a cross-sectional view of another preferred embodiment of the present invention.

5 is a graph showing filter characteristics with respect to the frequency of the embodiment shown in FIG.

6 is a graph showing the relationship between N _T ′ and aspect ratio δ.

FIG. 7 shows the relationship between γN _T ′ 4πMs and aspect ratio δ.

8 is a graph showing the relationship between a resonance frequency and an unloaded Q value.

9 is a graph showing the relationship between an external magnetic field and a resonance frequency.

10 is a perspective view of a resonance apparatus of the prior art.

* Explanation of symbols for main parts of the drawings

1: dielectric substrate 2: grounding conductor

3: first micro-strip line 4: second micro-strip line

9: nonmagnetic GGG substrate 19: main body

29 dielectric substrate 50 conductive layer

(Background of invention)

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to ferromagnetic resonators suitable for use in microwave filters or microwave oscillators, and more particularly to ferrimagnetic resonance apparatuses using ferrimagnetic resonances of yttrium iron garnet (YIG) thin films.

Conventionally, magnetic resonance devices for microwave devices such as filters or oscillators employing ferrimagnetic resonance of YIG have generally been a spherical body processed from bulk single crystal of YIG. However, the lower limit of the resonant frequency of the sphere is relatively high due to the demagnetizing field. For example, the resonant frequency is 1680 MHZ when using a non-internal YIG sphere having a saturation magnetization of 1800 G (Gauss).

As such, the prior art has not yet developed a microwave device having the ability to operate in the range below the UHF band. On the other hand, the lower limit of the resonance frequency can be reduced by partially replacing nonmagnetic ions such as Ga ³⁺ in the YIG instead of Fe ³⁺ , thereby reducing the saturation magnetization. In this case, if the replacement amount is very large, the half width ΔH of the resonance is increased to deteriorate the characteristics of the apparatus.

In another technique, a microwave device using ferromagnetic revolution forms a YIG thin film on a gadrinium gallium garnet (GGG) substrate with liquid epitaxial growth (hereafter referred to as LPE), and the thin film is formed in a circular or right angle shape by porolithography. Providing by providing the desired form such as has been proposed. Such a microwave device may be made of a microwave integrated circuit (herein referred to as MIC) using a micro-strip line or the like as a transmission line, so that the microwave device is easily mounted on a magnetic circuit for applying a C.D bias magnetic field. Moreover, since the device is produced by LPE and porolithography, mass productivity is improved.

Such ferromagnetic resonators using YIG thin films are described in U.S. Patent Nos. 4,547,754, 4,626,800, 4,636,756, and U.S. Patent Application No. US Pat. No. 844,984, filed March 27, 1986, US patent application 883,605 issued July 9, 1986; US patent application 833,103 issued July 7, 1986; all of the above Patents and patent applications are assigned to the applicant of the present application. In addition, the use of thin film elements significantly reduces the lower limit of the resonance frequency when compared to spherical elements. However, in such a magnetic resonance apparatus using a YIG thin film element, a detailed study on reducing the lower limit of the resonance frequency to the limit has not been reported yet.

As mentioned above, research to reduce the lower limit of the resonance frequency to the extreme has not yet been carried out, so an exemplary method of reducing the lower limit of the resonance frequency to an extremely low frequency strengthens the connection between the YIG thin film element and the transmission line, and therefore This significantly reduces the external Q of the resonator. That is, since the unloaded Q value of the YIG resonator is lower at lower frequencies, it is necessary to sufficiently reduce the external Q value in order to extend the reflection amplitude in the reflection type and the transmission amplitude in the transmission type.

10 shows the structure of the YIG thin film resonator of the YIG thin film type band pass filter. In this structure, the ground conductor 2 is formed on one of the major surfaces of the dielectric substrate 1, such as an alumina substrate (herein referred to as the first major surface), and includes first and second acting as input and output transmission lines, respectively. Second parallel micro-strip lines 3 and 4 are formed on the other major surface (herein referred to as the second major surface). The micro-striplines 3 and 4 are connected to the ground conductor 2 at their ends via first and second connecting conductors 5 and 6, respectively. The first and second YIG thin film elements 7 and 8, such as magnetic Gom Young elements, are arranged on the second major surface of the substrate 1 and are electrically connected to the first and second micro-striplines 3 and 4, respectively. It is magnetically connected. These YIG thin film elements 7 and 8 form a YIG thin film on one of the main surfaces of the nonmagnetic GGG substrate 9 by the above-described thin film forming technique, for example, by forming a circle of the thin film by selective etching using photolithography. It is formed by creating the desired pattern, such as shape. The third micro-strip line 10 as a connection transmission line for electromagnetically connecting the first and second YIG thin film elements 7 and 8, such as the first and second magnetic resonance elements, to the GGG substrate 9 On the other major surface of the. The third micro-strip line 10 is connected to the ground conductor 2 at its both ends by driving the third and fourth connecting conductors 11 and l2, respectively. Although the structure for applying the bias magnetic field is not shown in FIG. 10, the structure shown in FIG. 10 is arranged in a D.C. bias magnetic field applied at right angles to the main surface of the YIG thin film element.

However, since the connection between the micro-strip line and the YIG thin film element is not strong, the external Q value cannot be reduced to the extent necessary for sustained frequency operation. In the case of YIG thin film elements 7 and 8 having a diameter of 2.5 mm and a thickness of 25 μm, the external Q value Q _e2 due to the connection between the YIG thin film elements 7 and 8 and the input and output transmission lines 3 and 4 is While the value is 200, the external Q value Q _e2 between the YIG thin film elements 7 and 8 and the transmission line 10 is 250. In order to further reduce these external Q values, it is necessary to enlarge the sizes of the YIG thin film elements 7 and 8. However, if the diameters of the elements 7 and 8 are made very large in comparison with the micro-strip line width as the transmission line, the spurious characteristic will be worse. Moreover, if the thickness of the elements 7 and 8 is increased, the resonance frequency will increase undesirably.

It is an object of the present invention to provide an improved ferromagnetic resonance apparatus.

It is also an object of the present invention to provide a ferromagnetic resonance device using a YIG thin film element that can operate at extremely low resonance frequency limits.

It is yet another object of the present invention to provide a ferromagnetic resonance apparatus capable of operating over a wide range of frequencies.

In one aspect of the invention, there is provided a ferromagnetic resonance device having a YIG thin film element formed on a nonmagnetic substrate. And a main surface formed on the surface of the YIG thin film element 100, a transmission line connected on the YIG thin film element, and a bias magnetic field means for applying a bias magnetic field perpendicular to the main surface.

In another aspect of the present invention, there is provided a ferromagnetic resonance device having a YIG thin film element formed on a nonmagnetic substrate, wherein the YIG thin film element is a uniaxial magnetic anisotropy constant smaller than the uniaxial magnetic anisotropy of pure YIG thin film elements formed on a GGG substrate. and a main surface formed of (111) planes, a transmission line connected to the YIG thin film element, and a bias magnetic field means for applying a bias magnetic field perpendicular to the main surface.

Description of Good Embodiments

In the present invention, by using the YIG thin film element having the main surface formed of the (100) plane or the (111) plane with the reduced ku value, the lower limit Wmin of the resonance frequency can be reduced.

Such relationships will be described in more detail below.

The lower limit, Wmin, of the resonant frequency of a ferrimagnetic single crystal depends on two components, the elemental and anisotropic magnetic fields. Thus, it is necessary to do both elements in order to reduce the lower limit Wmin to the limit.

First, the device system must be considered. For simplicity, we will take a globular sample as an example. The sample is placed in the D.C. When placed in the magnetic field Ho, the internal D.C. The magnetic field Hi is expressed as

Hi = Ho-Nz · 4πMs (1)... … … … … … … … … … … … … … … … … … … … … … … … … (One)

Where Nz is the axial demagnetization factor and 4πMs is the saturation magnetization. For the sample, the resonance frequency W is given by the Kittel et al equation as follows.

W = γ {Ho- (Nz-N _T ) · 4πMs}... … … … … … … … … … … … … … … … … … … … … (2)

Is the magnetic rotation rate and NT is the factorization factor in the transverse direction. The following equation is derived from equations (1) and (2).

W = γ (Hi + N _T · 4πMs)... … … … … … … … … … … … … … … … … … … … … … … … … (3)

In this case, if the magnetization of the sample is not saturated, no single magnetization region is provided. Therefore, the magnetic resonance loss increases sharply.

So the conditions for sample saturation, namely internal D.C. Magnetic field Hi> 0 is required. Even if you neglect the internal magnetic field needed to saturate the sample, the resonance frequency will not be lower than the next value.

Wmin = γN _T · 4πMs... … … … … … … … … … … … … … … … … … … … … … … … (4)

In the case of the spherical YIG resonant element, N _T = 1/3 is given, and the lower limit of the resonance frequency for an unsubstituted YIG with saturation magnetization of 1 800 G is 1680 MHZ (γ = 2.8 MHZ / Q _e ), 3 The lower limit of the resonant frequency when the valent Fe ion Fe ³⁺ is substituted with the trivalent nonmagnetic Ga ion Ga ³⁺ to reduce the saturation magnetization to 600 G becomes 560 MHZ.

In the case of a circular YIG thin film disk, the shape of the disk is not perfectly spherical, and since the internal DC magnetic field is not constant, the operation is different from that described above. The resonance frequency obtained from the static field mode theory (W. Ichusawa and K. Abe) called "Resonance mode of static wave in magnetized disk" in Japanese Society of Applied Physics 48.3001 in 1977 can be expressed in the same form as equation (2). have. In this case, N _z -N _T depends on the aspect ratio (thickness / diameter) of the thin film disk. Here, the internal DC magnetic field Hi is minimized at the center of the disc. The minimum value of Hi is assumed to be expressed as follows.

Hi = Ho-Nz '· 4πMs... … … … … … … … … … … … … … … … … … … … … … … … … (5)

Here, Nz 'represents the element coefficient at the center of the disk. The lower limit Wmin of the resonance frequency is obtained from equations (2) and (5) as follows.

W min = gamma {Nz '-(Nz-N _T )} 4 pi Ms = N _T ' 4 pi Ms... … … … … … … … … … … … (6)

FIG. 6 shows N _T 'according to the aspect ratio, and FIG. 7 shows the value γN _T ' 4πMs when 4πMs is 1800G.

Typical values of γN _T '4πMS are

63 MHZ for δ = 1 × 10 ⁻² (diameter: 2 mm. thickness: 20 μm) and 125 MHZ for δ = 2 × 10 ⁻² . This value is very small compared to the case of the spherical YIG element

Next, the effect of the anisotropic magnetic field will be described.

Magnetic anisotropy of YIG thin films formed of LPE includes crystalline magnetic anisotropy and coaxial magnetic anisotropy. The conditions of the YIG thin film having the crystal surface 100 as the main surface and the YIG thin film having the crystal surface 111 as the main surface are given by the following equation. The equation is J. John Welly and Sons, Inc., USA, 1959. Smith and H. blood. second. Wijin's "Perity" Jay in 1956 IRE 44.1284. Oh, given by Altmann's title, the equation affected by the above-described anisotropic field described as "Microwave Resonance Relationship in Anisotropic Tropic Single Crystal Ferrites." (100) Condition of crystal surface in case of crystal surface.

W = γ (Hi + 2Ku / Ms-2│K _l │ / Ms ………………………………………………………………)

(Hi ≥ 2K ₁ / Ms = 2Ku / Ms), and the conditions of the crystal plane in the case of the (111) crystal plane.

W = γ (Hi + 2 Ku / Ms + 4 | K _l | / 3Ms)... … … … … … … … … … … … … … … … … … … … … … … (8)

Becomes

Where K _l is the primary cubic crystal magnetic anisotropy constant, negative in YIG, and Ku is a uniaxial anisotropy constant, which is thinner than bulk or YIG. The uniaxial anisotropy constant Ku is composed of magnetically distorted anisotropy Ks, where Ks is a mismatch between the YIG thin film lattice constant formed of LPE and the growth induction magnetic anisotropy K _G and GGG lattice constants associated with nonuniform crystal growth of the YIG thin film. Is caused by. In practice, the growth induced magnetic anisotropy K _G is negligibly small, so only the magnetic distortion anisotropy element is considered. Therefore, the lattice constant of the non-replaceable YIG is smaller than the lattice constant of GGG, and the magnetic distortion anisotropy Ks becomes positive because the magnetic distortion constants λ 111 and λ 100 are negative values. On the other hand, Y ³⁺ ions in YIG are partially substituted with La ³⁺ ions to obtain a match between the lattice constant of the YIG thin film and the lattice constant of the GGG substrate. Thus, Ks becomes almost O, and eventually Ku becomes almost zero.

The 100 film is perpendicular public from the formula (7) it can be seen that emerges from the zero frequency, In addition, the 111 membrane is the lower limit Wmin frequency of vertical resonance _{Ku = 0, │K l │ /} Ms = 400e when 149 MHZ.

In summary, the YIG thin film disc vertical resonance is expressed by the lower limit frequency Wmin as follows. When using (100) surfaces for major surfaces

Wmin = γN _T '4πMs... … … … … … … … … … … … … … … … … … … … … (9)

When using the (111) surface for the main surface

Wmin = N _T '4πMs + 2Ku / Ms + 4K ₁ / 3Ms... … … … … … … … … … … … 10

According to one aspect of the invention, when the YIG thin film element uses the (100) surface as the main surface, Equation (9) is set to sufficiently reduce the magnetic distortion anisotropy and growth induced magnetic anisotropy and thus the primary cubic anisotropy constant Deduce the anisotropic constant Ku that is less than or equal to the absolute value of K1. Moreover, when the aspect ratio is vertical to 5 × 10 ⁻² or less with respect to FIG. 6, the side element factor Nr ′ is reduced to reduce the lower limit frequency Wmin to an extreme value.

In another feature, it can be seen that Wmin is reduced with a substituted YIG thin film device having a Ku smaller than the non-matching YIG on the GGG substrate, and Wmin is also reduced to a Ku = 0 daily limit.

Further, as can be seen from equation (g), the lower limit frequency Wmin is reduced by partially replacing nonmagnetic ions such as Ga3 + ions instead of Fe ³⁺ ions in YIG, thereby reducing the saturation magnetization 4πMs.

The above description applies when the first order anisotropic constant K1 is negative, and when K1 is positive, the state of vertical resonance is expressed as follows.

(100) crystal surface if the state

W = γ (Hi + 2Ku / Ms + 2K ₁ / Ms …………………………………………………………… (11)

(111) crystal surface when the state

W = γ (Hi + 2Ku / Ms-4K ₁ / 3Ms ………………………………………………………… (12)

(Hi≥4K ₁ / 3Ms-2Ku / Ms

As is evident from the equations (11) and (12), Wmin can be reduced since the above (111) crystal surface makes Ku less than (2/3) K ₁ .

Further, as described above, the no-load Q value can be increased because it reduces the lower limit Wmin resonance frequency. 8 shows the change in no-load Q value with respect to frequency. As can be seen from FIG. 8, Qu is proportional to frequency W, and Qu is zero at Wmin.

Qu is represented as:

Qu = (W−Wmin) / γΔH... … … … … … … … … … … … … … … … … … … … … … … (13)

As can be seen from equation (13), the no-load Q value can be increased by significantly reducing Wmin when the frequency W is fixed, thus improving the characteristic. The effect is particularly noteworthy at low frequencies below 1 GHZ.

In the ferromagnetic resonance device using the YIG thin film element of the present invention, the operating frequency can be reduced to an extremely low frequency by reducing the external Q value Qe. This problem is now described in detail. First, in the case of using a resonant resonance device such as a YIG tuned oscillator, the reflection coefficient S ₁₁ is the no-load Q value, the external Q value and the spatial frequency of the YIG spatial element as Is given.

………………………………………………(14)

… … … … … … … … … … … … … … … … … … (14)

………………………………………………(15)

… … … … … … … … … … … … … … … … … … (15)

As can be seen from equation (15), the reflection coefficient is -1 when W is sufficiently separated from Wo, which is (Qu / Qe-1) / (Qu / Qe + 1) when W = Wo. When Qu> QeX, the YIG resonance element is in an overcoupled state, and the reflection coefficient causes a large loop near Wo. On the other hand, since Qu is extremely small in frequency, as can be seen from equation (13), Qe should be reduced to a very low value such that Qu> Qe.

Next, when the bandpass filter uses the same transmission type resonance apparatus, the transmission coefficient S21 of the first stage bandpass filter is given by the following equation.

………………………………………………(16)

… … … … … … … … … … … … … … … … … … (16)

………………………………………………(17)

… … … … … … … … … … … … … … … … … … (17)

As can be seen from equation (17), the transmission coefficient is 0 when W is sufficiently far from Wo, and it becomes when W = Wo (2Qu / Qe) / (2Qu / Qe + 1). Therefore, unless Qe is small enough with respect to the reduced value Qu at extremely low frequencies, the transmission amplitude at W = Wo cannot be raised to some extent. In other words, the operating frequency can be reduced to an extremely low value by sufficiently reducing the external Q value Qe.

(Release 11)

A YIG thin film disc having a diameter of 2.5 mm and a thickness of 50 μm is fabricated from the main surface designated as the (100) surface, and the vertical resonance frequency is measured when the external DC magnetic field varies in the thickness direction of the YIG thin film disc. The measurement results are shown in vacant circles in FIG. The lower limit of the resonance frequency is 140MHZ. Another YIG thin film disc with a diameter of 2.5 mm and a thickness of 50 μm was fabricated with the base surface specified by the (111) surface. The resonant frequency is represented by the circle as shown in FIG. In this case, the lower limit of the resonance frequency is almost identical to 270 MHz and 274 MHz obtained from equations (9) and (10). The curved solid line shown in FIG. 9 uses 4πMs = 1800G, K1 = -5.7 × 10 ³ erg / cm ³ , and Ku = 0.7 10 ³ erg / cm (assuming ku applies only to (100) surfaces) The theoretical curve drawn. In this embodiment, Ku <| K1 | The condition is satisfied.

Referring to FIGS. 1 and 2, which show an example of a YIN thin film two-stage band pass filter according to the present invention, reference numeral 19 denotes a main body of a device, and reference numeral 20 denotes a D.C. A bias application means for applying a bias magnetic field is shown.

The transmission system of this example consists of a so-called suspended substrate strip line. That is, the main body 19 includes the first conductor 21 and the second conductor 22, and the nonmagnetic GGG substrate 5 and the dielectric substrate 29 are positioned therebetween. A nonmagnetic GGG substrate 25 is provided with the first and second disk type YIN thin film elements 23 and 24. The dielectric substrate 29 has first and second strip lines 28 formed on one surface thereof to serve as input and output strip lines.

In order to increase the high frequency magnetic field between the strip lines 26 and 27 and the second conductor 22, the strip lines 26 and 27 are arranged to be offset to the second conductor 22 at a relatively close position. The YIG thin film elements 23 and 24 are arranged to contact the strip lines 26 and 27 to strengthen the connection therebetween.

The first and second YIG thin film elements 23 and 24 are substituted YIG thin films having a (111) crystal surface as the base surface of the non-magnetic GGG substrate 25 opposite to the dielectric substrate 29 by LPE. Or after forming a YIG thin film having a (100) crystal surface, and then etching unnecessary portions of the thin film by porolithography in order to obtain a desired size, shape and arrangement.

The dielectric substrate 29 is formed of a ceramic such as alumina. The first and second strip lines 26 and 27 are deposited at their facing positions on one surface of the substrate 29 facing the YIG thin film elements 23 and 24.

The third strip line 28 is deposited on the other related surface of the substrate 29 in an intersecting manner with the strip lines 26 and 27. Opposite ends 26a, 27a of the first and second microstrip lines 26, 27 and both ends 28a, 28b of the third microstrip line 28 are designed to serve as ground terminals. The substrates 25 and 29 are positioned between the first and second conductors 21 and 22 to contact the conductors 21 or 220.

The first conductor 21 is electromagnetically connected between the first and second strip lines 26 and 27 and the elements 23 and 24 and the portions opposite to the first and second YIG thin film elements 23 and 24. It is formed in a low surface with a relatively deep groove 30 to define a relatively large space in the portion and in the connecting portion between the third strip line 28 and the first and second strip lines 26 and 27.

The second conductor 22 is formed on the upper surface with the relatively shallow flaws 31 to accommodate the overlapping substrates 25 and 29. Spacers 32 are located at both side edges of the bottom of the flaw 31 to maintain a relatively small gap between the conductors 22 and the YIG thin film elements 23 and 24 opposite the strip lines 26 and 27.

The ground terminal at both ends 28a, 28b of the third microstrip line 28 is designed to contact the bottom surface 21a of the first conductor 21 and the first and second microstrip lines 26,27. The ground terminal at each end 26a, 27a of is designed to contact the base portion 22a of the second conductor 22 as located in the flaw 31.

The bias magnetic field applying means 20 comprises a pair of barrel cores 41 and 42 which enclose the main body 19 of the apparatus. The barrel gores 41 and 42 have central magnetic poles 41A and 42A opposite each other so that the body 19 is located therebetween. The coil 43 is wound around one of the central magnetic poles 41A and 42A. D.C. when the current is supplied to the coil 43. The bias magnetic field is generated between the central magnetic poles 41A and 42A, and the D.C. The bias magnetic field can be varied by choosing the current to be supplied.

In this arrangement, the magnetic connection between the YIG thin film elements 23 and 24 and the input and output strip lines 26 and 27 becomes strong enough to reduce the external Q value Qe. Thus, the operating frequency is reduced.

For example, when using the YIG thin film elements 23 and 24 having a diameter of 2.5 mm and a thickness of 25 μm, the external Q value by the connection between the input / output strip lines 26 and 27 and the YIG thin film elements 23 and 24 ( Qel) is 70, and the external Q value Qe2 due to the connection between the connecting strip line 28 and the YIG thin film element 23.24 is 325. 3 is a filter specific measurement result plot where curves 61, 62 and 63 represent insertion loss, return loss and 3 dB eo bandwidth, respectively. As is apparent from FIG. 3, the present invention provides a variable frequency YIG bandpass filter operating at a frequency in the range of 400 MHz to 2 GHZ.

4 shows an embodiment in which the external Q value is further reduced than the above embodiment. Referring to FIG. 4, an opposite side surface of the YIG thin film elements 23 and 24, that is, at least a portion opposite to the YIG thin film elements 23 and 24, is provided on the opposite side of the second conductor 23. Except for the conductive layer 50 formed on the entire surface of the nonmagnetic GGG substrate C5 on the surface of (25), the specific heat of this embodiment is similar to the previous embodiment shown in FIGS. The conductive layer 50 is maintained in a flow state which is not electrically connected to the first and second conductors 21 and 22. Corresponding parts indicated by the same reference numerals as in FIG. 1 and their description are omitted here.

FIG. 5 shows the results of the filter characteristic measurement over frequency, where curves 64, 65 and 66 indicate insertion loss, return loss and 3 dB bandwidth, respectively. Comparing the characteristics of FIG. 3, the insertion loss is not different from that of FIG. 3 since the filter of the previous embodiment shown in FIGS. 1 and 2 inherently has a small insertion loss.

In contrast, the 3 dB bandwidth of FIG. 5 is increased by about 5 MZ over the bandwidth of FIG. This result is because the external Q value of FIG. 4 is further reduced.

Although the above embodiment uses a suspended substrate strip line arrangement, the present invention may be a modified arrangement such as an infinitely open suspended substrate strip line arrangement wherein the first conductor 21 is a dielectric substrate 29 or an inverted micro-strip line arrangement. Falls off enough.

As described above, the present invention can achieve a YIG thin film ferromagnetic resonator that can be operated at extremely low frequencies.

Moreover, the lower resonance frequency limit can be sufficiently reduced. As a result, the no-load Q value can thereby be increased to the same frequency to improve the characteristic. In particular, the effect is significant at frequencies lower than 1 GHZ.

Furthermore, as mentioned with respect to FIGS. 1 and 2 and 4, the conductors 21, 22 of the body 19 surround the resonant element to exhibit a shielding effect. Therefore, when the main body 19 is mounted in the gap between the magnetic poles 41A and 42A of the magnetic circuit of the bias magnetic field applying means 20, a change in characteristics due to insulation deterioration is avoided by the shielding effect. Can be In addition, since the strip line is formed on the dielectric substrate 29, and the thin film elements 23 and 24 are formed on the nonmagnetic substrate 25, the formation of the strip line results in the formation of the YIG thin film element. Can be performed independently, thereby simplifying the production process and improving the production rate.

Claims (10)

A ferromagnetic resonance apparatus, comprising: a nonmagnetic substrate, a ferrimagnetic thin film element formed on a main surface of the nonmagnetic substrate, a strip line electromagnetically coupled to the ferrimagnetic thin film element and disposed on the nonmagnetic organ, and the strip A conductive wall of a ground potential facing the line and spaced at a predetermined distance, one end of the strip line connected to the conductive wall of the ground potential, and a DC to the ferrimagnetic thin film perpendicular to the main surface. And a magnetic field means for applying a magnetic field, wherein the ferromagnetic thin film element is formed of a YIG thin film having a main surface coincident with the (100) plane. A ferromagnetic resonance apparatus, comprising: a nonmagnetic substrate, a ferrimagnetic thin film element formed on a main surface of the nonmagnetic substrate, a strip line electromagnetically connected to the ferrimagnetic thin film element and disposed on the nonmagnetic substrate; DC to the ferromagnetic thin film perpendicular to the main wall and the strip line end connected to the conductive wall of ground potential facing the strip line and spaced a predetermined distance apart; And a bias magnetic field means for applying a magnetic field, wherein the ferromagnetic thin film element has a uniaxial magnetic anisotropy constant Ku which is smaller than the uniaxial anisotropy constant of the pure YIG thin film element formed on the GGG substrate, and has a main surface coincident with the face 111. Ferromagnetic resonance device, characterized in that formed with a YIG thin film having. The ferromagnetic resonance device of claim 1 or 2, wherein the YIG retinal element is formed in a disk shape. 4. The ferromagnetic resonance device of claim 3, wherein the YIG thin film element has an aspect ratio not greater than 5x10 ^-12 . A filter device using ferromagnetic resonance, comprising: a nonmagnetic substrate, first and second ferromagnetic thin film elements formed on a surface of the nonmagnetic substrate, and a first strip electromagnetically connected to the first ferromagnetic thin film element A line, a second strip line electromagnetically connected to the second ferromagnetic thin film element, a conductive wall of ground potential facing each of the first and second strip lines and spaced apart by a predetermined distance, and an input The first stripline end connected to the circuit, another end of the first stripline terminated at the conductive wall of the ground potential, the second stripline end connected to an output circuit, and the ground potential Another end of the second strip line terminated at the conductive wall and DC to the ferrimagnetic thin film element perpendicular to the main surface. And a bias magnetic field means for applying a bias magnetic field, wherein the first and second ferromagnetic thin film elements are magnetically coupled to each other, and the ferrimagnetic thin film elements are formed of YIG having a major surface formed of (100) planes. Filter device, characterized in that. A ferromagnetic resonance apparatus, comprising: a nonmagnetic substrate, a ferrimagnetic thin film element formed on a main surface of the nonmagnetic substrate, a strip line disposed on the nonmagnetic substrate electromagnetically connected to the ferrimagnetic thin film element; A conductive wall of a ground potential facing the strip line and spaced at a predetermined distance, one end of the strip line connected to the conductive wall of the ground potential, and a DC to the ferrimagnetic thin film perpendicular to the main surface; A bias magnetic field means for applying a magnetic field, and a conductive layer formed on an opposite surface of the main surface of the nonmagnetic substrate, wherein the ferromagnetic thin film element is formed of a YIG thin film having a main surface formed of the surface 100. Ferromagnetic resonance device characterized in that. A filter device using ferromagnetic resonance, comprising: a nonmagnetic substrate, first and second ferromagnetic thin film elements formed on a main surface of the nonmagnetic substrate, and a first electromagnetically connected to the first ferromagnetic thin film element A strip line, a second strip line electromagnetically connected to the second ferromagnetic thin film element, a conductive wall of a ground potential facing each of the first second strip lines and spaced apart by a predetermined distance, and an input circuit The first strip line end connected to the second strip line, the other end of the first strip line terminated at the conductive wall of the ground potential, the second strip line end connected to an output furnace, and the ground potential conduction. Another end of the second strip line terminated at the wall and DC to the ferrimagnetic thin film perpendicular to the major surface. A bias magnetic field means for applying a bias magnetic field, wherein the first and second ferromagnetic thin film elements are magnetically coupled to each other, and the ferrimagnetic thin film element is a uniaxial magnetic anisotropy constant of a pure YIG thin film element formed on a GGG substrate. A filter device characterized in that it is formed of a YIG thin film having a smaller uniaxial magnetic anisotropy constant Ku and having a main surface formed of the face 111. A filter device using ferromagnetic resonance, comprising: a nonmagnetic substrate, first and second ferromagnetic thin film elements formed on a main surface of the nonmagnetic substrate, and a first strip electromagnetically connected to the first ferromagnetic thin film element A line, a second strip line electromagnetically connected to the second ferromagnetic thin film element, a conductive wall of ground potential facing each of the first and second strip lines and spaced apart by a predetermined distance, and an input The first stripline end connected to the circuit, another end of the first stripline terminated at the conductive wall of the ground potential, the second stripline end connected to an output circuit, and the ground potential Another end of the second strip line terminated at the conductive wall, bias magnetic field means for applying DC and a bias magnetic field to the ferromagnetic thin film element perpendicular to the main surface, and the nonmagnetic A conductive layer formed on an opposite surface of the substrate major surface, wherein the first and second ferromagnetic thin film elements are magnetically coupled to each other, and the ferrimagnetic thin film element has a major surface formed of (100) planes. Filter device, characterized in that formed in. 8. The filter device according to claim 5 or 7, wherein the first and second ferromagnetic thin film elements are magnetically coupled by a transmission line. 8. The device of claim 5 or 7, wherein the first and second ferromagnetic thin film elements are magnetically coupled by a source third ferromagnetic thin film element adjacent between the first and second ferromagnetic thin film elements. Filter device characterized in that.

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