CN114069185B - Adjustable static magnetic wave resonator - Google Patents
Adjustable static magnetic wave resonator Download PDFInfo
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- CN114069185B CN114069185B CN202210061911.XA CN202210061911A CN114069185B CN 114069185 B CN114069185 B CN 114069185B CN 202210061911 A CN202210061911 A CN 202210061911A CN 114069185 B CN114069185 B CN 114069185B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/082—Microstripline resonators
Abstract
An adjustable static magnetic wave resonator belongs to the technical field of microwave radio frequency devices. The resonator comprises a resonator body, wherein the resonator body comprises a resonant cavity, a lower substrate arranged in the resonant cavity, a radio-frequency input end arranged on one side of the resonant cavity and a radio-frequency output end arranged at the top of the resonant cavity; a first microstrip line located above the lower substrate; the second microstrip line is positioned on the lower substrate and coupled with the first microstrip line; the disc is connected with the radio frequency output end; and the YIG substrate is positioned above the first microstrip line and the second microstrip line. The adjustable static magnetic wave resonator can be tunable from a frequency band of 4GHz-12GHz, the 3dB bandwidth is extremely narrow, the Q value range is 2000-4500, the assembling, adjusting and measuring efficiency of the resonator is effectively improved, the processing technology is simplified, the processing cost is reduced, and the batch production of the yttrium iron garnet tuned resonator is facilitated.
Description
Technical Field
The invention belongs to the technical field of microwave radio frequency devices, and particularly relates to an adjustable magnetostatic wave resonator.
Background
In order to meet the development of miniaturization and light weight of communication equipment, the requirements of low phase noise and wide tuning bandwidth are put forward on a signal source, and the common microwave solid-state signal source at present is a Dielectric Resonant Oscillator (DRO), a Voltage Controlled Oscillator (VCO) or a combination of the two, and a tunable magnetostatic wave resonator made based on an Yttrium Iron Garnet (YIG) resonator.
Currently, tunable magnetostatic wave resonators based on Yttrium Iron Garnet (YIG) are mainly made using the ferromagnetic resonance characteristics of yttrium iron garnet materials. In a traditional resonance structure, yttrium iron garnet pellets are generally used as harmonic oscillators, and excitation of the resonators is realized by utilizing a ring coupling structure. However, the yttrium iron garnet pellets in the resonant cavity of the resonator are prepared by a complicated and high-precision polishing process, the process difficulty is high, and correspondingly adopted processing equipment is relatively expensive. Meanwhile, the yttrium iron garnet globule can be used only by finely adjusting the crystal orientation, so that the debugging and assembly of the resonator are more complicated.
Disclosure of Invention
The invention aims to provide a tunable magnetostatic wave resonator aiming at the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a tunable magnetostatic wave resonator, comprising:
the resonator comprises a resonator body 1, wherein the resonator body 1 comprises a resonant cavity, a lower substrate 7 arranged in the resonant cavity, a radio frequency input end 2 arranged on one side of the resonant cavity and a radio frequency output end 3 arranged at the top of the resonant cavity;
the first microstrip line 4 is positioned on the lower substrate 7 and connected with the radio frequency input end 2 extending into the resonant cavity;
the second microstrip line 5 is positioned above the lower substrate 7, and the second microstrip line 5 is coupled with the first microstrip line 4;
the disc 31, the said disc 31 is connected with radio frequency output terminal 3 stretching into the resonant cavity from the top of resonant cavity;
a YIG substrate 6, the YIG substrate 6 comprising a GGG substrate 61 and a YIG thin film 62 grown on the surface of the GGG substrate 61; the YIG substrate 6 is positioned above the first microstrip line 4 and the second microstrip line 5 and completely covers the coupling areas of the first microstrip line 4 and the second microstrip line 5; the YIG substrate 6 is located directly below the puck 31.
Further, the first microstrip line 4 is arranged along the length direction of the lower substrate 7, the first microstrip line 4 comprises an input section 41, a first transition section 42 and a U-shaped section 43 which are connected in sequence, and the input section 41 is connected with the radio frequency input end 2; the second microstrip line 5 comprises a fork-shaped section 51, a second transition section 52 and a grounding covering section 53 which are connected in sequence. The two branches of the U-shaped section 43 are located in the two recesses of the fork-shaped section 51, the U-shaped section 43 is not in contact with the fork-shaped section 51, the grounding cover section 53 is provided with a grounding via hole 54, and the grounding via hole 54 penetrates through the lower substrate 7 and is connected with a grounding layer 71 arranged on the bottom surface of the lower substrate 7; the GGG substrate 61 is positioned above the U-shaped section 43 and the fork-shaped section 51 and is in contact with the U-shaped section 43 and the fork-shaped section 51, and the GGG substrate 61 completely covers the U-shaped section 43 and the fork-shaped section 51 without contacting the ground cover section 53.
Further, the grounding cover section 53 is U-shaped, and includes a first grounding section vertically connected to the second transition section 52 and two second grounding sections vertically connected to two ends of the first grounding section, respectively, the second grounding sections are located on two sides of the length direction of the lower substrate 7, the length of the second grounding section is equal to the length of the lower substrate 7, and the length of the first grounding section is equal to the width of the lower substrate 7.
Further, the width of the input section 41 is greater than the width of the first transition section 42, and the width of the first transition section 42 is equal to the width of the second transition section 52.
Further, the first microstrip line 4 and the second microstrip line 5 are axisymmetrical with respect to a center line of the lower substrate 7 in the length direction.
Further, the resonator body 1 is in an external magnetic field 8, and the direction of the external magnetic field 8 is parallel to the width direction of the lower substrate 7.
Further, the radio frequency input end 2 and the radio frequency output end 3 are radio frequency insulators, the radio frequency input end 2 is connected with the first microstrip line 4 through welding, and the radio frequency output end 3 is connected with the disc 31 through a conductive adhesive.
Further, the resonant cavity includes:
the first cavity 10, the lower substrate 7, the first microstrip line 4, the second microstrip line 5 and the YIG substrate 6 are all positioned in the first cavity 10;
a second cavity 11, wherein the second cavity 11 is formed by upward protruding the top of the first cavity 10, the top surface of the YIG substrate 6 is located in the second cavity, and two side surfaces of the YIG substrate 6 are spaced from the side surfaces of the second cavity 11;
a third chamber 12, wherein the third chamber 12 is formed by the second chamber 11 protruding upward from the top, and a disc 31 is disposed in the third chamber 12.
Further, the YIG substrate 6 is positioned right below the disk 31, i.e., the center of the YIG substrate 6 is opposite to the center of the disk 31.
Further, the YIG film 62 is grown on the GGG substrate 61 by a liquid phase epitaxy technique.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the invention, the yttrium iron garnet film is used for replacing yttrium iron garnet balls as the harmonic oscillator, the microstrip line structure is used for replacing a complex coupling circuit structure, the obtained adjustable static magnetic wave resonator can be tunable from a frequency band of 4GHz-12GHz, the 3dB bandwidth is extremely narrow, the Q value range is 2000-4500, the assembly, adjustment and measurement efficiency of the resonator is effectively improved, the processing technology is simplified, the processing cost is reduced, and the mass production of the yttrium iron garnet tuned resonator is more favorably realized.
2. According to the adjustable static magnetic wave resonator provided by the invention, through the design of the cavity structure and the layout of the microstrip line, the disc and the YIG substrate, the horizontally input radio-frequency signal is converted into vertically upward output after being coupled in the cavity, and the isolation between input and output is increased.
3. According to the adjustable static magnetic wave resonator provided by the invention, the radio-frequency signal is coupled to the YIG film through the structural design of the first microstrip line and the second microstrip line; meanwhile, the strongest radio frequency magnetic field coupled to the YIG thin film material is adjusted according to the gap between the U-shaped section and the fork-shaped section and the width of the microstrip line, so that a better response waveform is obtained; and the response waveform of the whole resonator is adjusted by controlling the size of the disc and the distance between the disc and the YIG film material.
4. According to the adjustable static magnetic wave resonator provided by the invention, the good grounding of the microstrip line is realized through the second transition section and the grounding covering section of the second microstrip line, meanwhile, the grounding covering section is integrally U-shaped, the YIG substrate is wrapped from the periphery from one end opposite to the input end, the grounding layer conducted to the back surface of the lower substrate is utilized to realize the grounding, and the effect of reducing the substrate resonance is achieved.
Drawings
Fig. 1 is a perspective view showing a structure of a tunable magnetostatic wave resonator according to an embodiment of the present invention.
Fig. 2 is a front view of a tunable magnetostatic wave resonator according to an embodiment of the present invention;
FIG. 3 is a schematic structural view of a lower substrate and YIG substrate of a tunable magnetostatic wave resonator according to an embodiment of the present invention;
fig. 4 is a back side view of a lower substrate of a tunable static magnetic wave resonator according to an embodiment of the present invention;
fig. 5 is a structural view of a first microstrip line and a second microstrip line of the tunable magnetostatic wave resonator according to the embodiment of the present invention;
fig. 6 is a three-dimensional electromagnetic simulation result of the tunable magnetostatic wave resonator according to the embodiment of the present invention when the external magnetic field is 2512 Oe.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the following detailed description of the embodiments of the present invention is made with reference to the accompanying drawings, but the embodiments described in the present invention are some, not all, of the embodiments of the present invention.
Examples
An embodiment provides a tunable magnetostatic wave resonator, as shown in fig. 1 to 2, including:
the resonator comprises a resonator body 1, wherein the resonator body 1 comprises a resonant cavity, a lower substrate 7 arranged in the resonant cavity, a radio frequency input end 2 arranged on one side of the resonant cavity and a radio frequency output end 3 arranged at the top of the resonant cavity;
the first microstrip line 4 is positioned on the lower substrate 7 and connected with the radio frequency input end 2 extending into the resonant cavity;
the second microstrip line 5 is positioned on the lower substrate 7, and the second microstrip line 5 is coupled with the first microstrip line 4;
the disc 31, the said disc 31 is connected with radio frequency output terminal 3 stretching into the resonant cavity from the top of resonant cavity;
a YIG substrate 6, the YIG substrate 6 including a GGG (i.e., gadolinium gallium garnet) substrate 61 connected to the first microstrip line 4 and a YIG thin film 62 grown on the surface of the GGG substrate 61; the YIG substrate 6 is positioned above the first microstrip line 4 and the second microstrip line 5 and completely covers the coupling areas of the first microstrip line 4 and the second microstrip line 5; the YIG substrate 6 is located directly below the puck 31.
Specifically, the radio frequency input end 2 and the radio frequency output end 3 adopt radio frequency insulators, the radio frequency input end 2 is connected with the first microstrip line 4 through welding and used for inputting radio frequency signals, and the radio frequency output end 3 is connected with the disc 31 through conductive adhesive and used for outputting radio frequency signals.
Specifically, the resonant cavity is made of metal aluminum and comprises: the first cavity 10, the lower substrate 7, the first microstrip line 4, the second microstrip line 5 and the YIG substrate 6 are all positioned in the first cavity 10; a second cavity 11, wherein the second cavity 11 is formed by upward protruding the top of the first cavity 10, the top surface of the YIG substrate 6 is located in the second cavity, and two side surfaces of the YIG substrate 6 are spaced from the side surfaces of the second cavity 11; and a third cavity 12, wherein the third cavity 12 is formed by upward protruding the top of the second cavity 11, the disc 31 is positioned in the third cavity 12, and the lower part of the radio frequency output end 3 extends into the third cavity 12 and is connected with the disc 31.
As shown in fig. 3 to 5, the first microstrip line 4 is disposed along the length direction of the lower substrate 7, the first microstrip line 4 includes an input section 41, a first transition section 42, and a U-shaped section 43, which are connected in sequence, and the input section 41 is connected to the radio frequency input end 2; the second microstrip line 5 comprises a fork-shaped section 51, a second transition section 52 and a grounding covering section 53 which are connected in sequence, wherein the fork-shaped section 51 is in a shape of a Chinese character 'shan' and is provided with two concave parts. The two branches of the U-shaped section 43 are located in the two recesses of the fork-shaped section 51, the U-shaped section 43 is not in contact with the fork-shaped section 51, the grounding cover section 53 is provided with a grounding via hole 54, and the grounding via hole 54 penetrates through the lower substrate 7 and is connected with a grounding layer 71 arranged on the bottom surface of the lower substrate 7; the GGG substrate 61 is positioned above the U-shaped section 43 and the fork-shaped section 51 and is in contact with the U-shaped section 43 and the fork-shaped section 51, and the GGG substrate 61 completely covers the U-shaped section 43 and the fork-shaped section 51 without contacting the ground cover section 53.
As shown in fig. 5, the grounding cover 53 is U-shaped, and includes a first grounding segment vertically connected to the second transition segment 52, and two second grounding segments vertically connected to two ends of the first grounding segment, respectively, the second grounding segments are located at two sides of the length direction of the lower substrate 7, the length of the second grounding segments is equal to the length of the lower substrate 7, and the length of the first grounding segments is equal to the width of the lower substrate 7. The width of the input section 41 is greater than the width of the first transition section 42, and the width of the first transition section 42 is equal to the width of the second transition section 52. The first microstrip line 4 and the second microstrip line 5 are axisymmetrical with respect to a center line in a length direction of the lower substrate 7.
As shown in fig. 2, the resonator body 1 is in the external magnetic field 8, two magnetic poles of the external magnetic field 8 are respectively located at two sides of the resonator body 1, and the direction is parallel to the width direction of the lower substrate 7.
According to the adjustable static magnetic wave resonator provided by the embodiment, under the action of the external magnetic field 8, when the frequency of an input radio-frequency signal is equal to the ferromagnetic resonance frequency of the YIG film 62, the first microstrip line 4 of the radio-frequency input end 2 couples the horizontally incident radio-frequency signal to the YIG substrate 6 connected with the lower substrate 7, and then couples the horizontally incident radio-frequency signal to the disc 31, and the horizontally incident radio-frequency signal is output upwards and vertically through the radio-frequency output end 3. With the change of the magnitude of the external magnetic field, the ferromagnetic resonance frequency of the YIG film 62 changes, thereby realizing the tunable characteristic.
Fig. 6 is a three-dimensional electromagnetic simulation result of the adjustable magnetostatic wave resonator according to the embodiment of the present invention when the external magnetic field is 2512 Oe; the magnetic field magnitude of the external magnetic field 8 is set to 816Oe to 3555 Oe. As can be seen from FIG. 6, when the magnitude of the external magnetic field 8 is 2512Oe, the 3dB bandwidth of the resonator according to the embodiment of the present invention is 6.7MHz, and the Q value reaches about 4300.
Therefore, the yttrium iron garnet film is used for replacing yttrium iron garnet balls as the harmonic oscillator, the microstrip line structure is used for replacing a complex coupling circuit structure, the obtained adjustable static magnetic wave resonator can be tunable from a frequency band of 4GHz-12GHz, the 3dB bandwidth is extremely narrow, the Q value range is 2000-4500, the assembling, adjusting and measuring efficiency of the resonator is effectively improved, the processing technology is simplified, the processing cost is reduced, and the batch production of the yttrium iron garnet tuned resonator is facilitated.
The foregoing is merely a preferred embodiment of this invention and is not intended to be exhaustive or to limit the invention to the precise form disclosed. It will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the scope of the invention.
Claims (9)
1. A tunable magnetostatic wave resonator, comprising:
the resonator comprises a resonator body (1), wherein the resonator body (1) comprises a resonant cavity, a lower substrate (7) arranged in the resonant cavity, a radio frequency input end (2) arranged on one side of the resonant cavity and a radio frequency output end (3) arranged at the top of the resonant cavity;
the first microstrip line (4) is positioned on the lower substrate (7) and connected with the radio frequency input end (2) extending into the resonant cavity;
the second microstrip line (5) is positioned on the lower substrate (7) and coupled with the first microstrip line (4);
the disc (31), the said disc (31) is connected with radio frequency output terminal (3) stretching into the resonant cavity from the resonant cavity top;
a YIG substrate (6), wherein the YIG substrate (6) comprises a GGG substrate (61) and a YIG thin film (62) grown on the surface of the GGG substrate (61); the YIG substrate (6) is positioned above the first microstrip line (4) and the second microstrip line (5) and completely covers the coupling area of the first microstrip line (4) and the second microstrip line (5); the YIG substrate (6) is positioned right below the disc (31).
2. The adjustable static magnetic wave resonator according to claim 1, characterized in that the first microstrip line (4) is arranged along the length direction of the lower substrate (7), the first microstrip line (4) comprises an input section (41), a first transition section (42) and a U-shaped section (43) which are connected in sequence, and the input section (41) is connected with the radio frequency input end (2); the second microstrip line (5) comprises a fork-shaped section (51), a second transition section (52) and a grounding covering section (53) which are connected in sequence; the two branches of the U-shaped section (43) are positioned in two inner recesses of the fork-shaped section (51), the U-shaped section (43) is not contacted with the fork-shaped section (51), the grounding covering section (53) is provided with a grounding via hole (54), and the grounding via hole (54) penetrates through the lower substrate (7) and is connected with a grounding layer (71) arranged on the bottom surface of the lower substrate (7); the GGG substrate (61) is positioned above the U-shaped section (43) and the fork-shaped section (51) and is in contact with the U-shaped section (43) and the fork-shaped section (51), and the GGG substrate (61) completely covers the U-shaped section (43) and the fork-shaped section (51) and is not in contact with the grounding covering section (53).
3. A tunable static magnetic wave resonator according to claim 2, wherein the ground cover section (53) is U-shaped and includes a first ground section vertically connected to the second transition section (52), and two second ground sections vertically connected to both ends of the first ground section, respectively, the second ground sections being located on both sides in the longitudinal direction of the lower substrate (7), the length of the second ground section being equal to the length of the lower substrate (7), and the length of the first ground section being equal to the width of the lower substrate (7).
4. A tunable static magnetic wave resonator according to claim 2, wherein the input section (41) has a width larger than that of the first transition section (42), and the first transition section (42) has a width equal to that of the second transition section (52).
5. The tunable static magnetic wave resonator according to claim 1, wherein the first microstrip line (4) and the second microstrip line (5) are axisymmetric with respect to a center line in a length direction of the lower substrate (7).
6. A tunable static magnetic wave resonator according to claim 1, characterized in that the resonator body (1) is in an external magnetic field (8), and the direction of the external magnetic field (8) is parallel to the width direction of the lower substrate (7).
7. A tunable static magnetic wave resonator according to claim 1, wherein the radio frequency input terminal (2) and the radio frequency output terminal (3) are radio frequency insulators, the radio frequency input terminal (2) is connected to the first microstrip line (4) by welding, and the radio frequency output terminal (3) is connected to the disc (31) by a conductive adhesive.
8. A tunable magnetostatic wave resonator as claimed in claim 1, wherein the resonance cavity comprises:
the lower substrate (7), the first microstrip line (4), the second microstrip line (5) and the YIG substrate (6) are all positioned in the first cavity (10);
the top of the first cavity (10) is formed in a protruding mode, the top face of the YIG substrate (6) is located in the second cavity, and a space is reserved between two side faces of the YIG substrate (6) and the side faces of the second cavity (11);
a third cavity (12), wherein the third cavity (12) is formed by the upward protrusion of the top of the second cavity (11), and the disc (31) is positioned in the third cavity (12).
9. The tunable static magnetic wave resonator according to claim 1, wherein the YIG thin film (62) is grown on the GGG substrate (61) by a liquid phase epitaxy technique.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210061911.XA CN114069185B (en) | 2022-01-19 | 2022-01-19 | Adjustable static magnetic wave resonator |
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| CN202210061911.XA CN114069185B (en) | 2022-01-19 | 2022-01-19 | Adjustable static magnetic wave resonator |
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| CN114069185B true CN114069185B (en) | 2022-05-03 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114865254B (en) * | 2022-06-27 | 2023-06-02 | 成都威频科技有限公司 | Waveguide type adjustable band-pass filter |
| CN115911797B (en) * | 2023-03-10 | 2023-07-28 | 成都威频科技有限公司 | Up-down coupling adjustable band-pass filter |
| CN115939708B (en) * | 2023-03-10 | 2023-06-02 | 成都威频科技有限公司 | Up-down coupling wide-bandwidth adjustable band-pass filter |
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