CN115236939A - Positive photoresist composition for organic insulating film of high-aperture-ratio liquid crystal display element - Google Patents

Abstract

The invention discloses a positive photoresist composition for an organic insulating film of a high-aperture-ratio liquid crystal display element, which comprises the following components in parts by weight: the positive photoresist composition for an organic insulating film of a high aperture ratio liquid crystal display device according to the present invention has excellent heat resistance in forming an insulating film, and is excellent in adhesion with metals and inorganic substances, UV transmittance, residual film ratio, flatness, and pattern stability, and the composition of the present invention has low raw material cost and does not require reactive ion etching through a photoresist.

Description

Positive photoresist composition for organic insulating film of high-aperture-ratio liquid crystal display element

Technical Field

The present invention relates to a positive photoresist composition for an organic insulating film of a high-aperture liquid crystal display device, and more particularly, to a positive photoresist composition which can be developed with an alkali developer to form an organic insulating film of a high-transmittance, high-aperture liquid crystal display device, and has a shortened process, and excellent adhesion to metal, UV transmittance, residual film ratio, and pattern stability.

Background

In general, liquid Crystal Display (LCD) devices are used for Display devices such as televisions and graphic displays. In particular, since each pixel includes a switching element such as a Thin Film Transistor (TFT), and an active matrix LCD has a high-speed response characteristic and is suitable for a high number of pixels, it has made a great contribution to achieving a high image quality, a large size, and a color display screen comparable to a CRT (Cathode Ray Tube).

In order to obtain a high-quality display screen in a TFT-LCD, the aperture ratio is first increased. Here, the aperture ratio refers to an actual light transmittance of the pixel electrode area.

In the TFT-LCD, as the demand for the size and resolution thereof increases, the capacity increases, and on the contrary, the efficiency of the battery cannot keep up with, and therefore, as a method for solving the decrease in the efficiency of the battery, a method for improving the transmittance of the liquid crystal has appeared. Methods for improving the transmittance of liquid crystal include a method for greatly improving the aperture ratio of a liquid crystal panel, a method for developing a highly transparent polarizing plate, and a method for using a highly transparent color filter. In this method, as a method of increasing the aperture ratio of the liquid crystal panel, a technique of arranging an ITO (Indium Tin Oxide) electrode made of a transparent metal on the TFT as a structural ITO pixel of the entire pixel region of the pixel electrode and increasing the pixel electrode area is used. This method is an epoch-making technique for increasing the aperture ratio of the conventional TFT-LCD from 50 to 60% to about 80 to 85%, and therefore, the decrease in the battery efficiency can be greatly reduced.

Hereinafter, in order to facilitate understanding of the high aperture ratio TFT-LCD, a detailed description will be given with reference to the accompanying drawings. FIG. 1 is a plan view of a unit cell of a conventional TFT-LCD having a high aperture ratio. As shown in fig. 1, the gate lines 2 are arranged laterally, and the storage electrode lines 4 are arranged at positions spaced apart from each other at predetermined intervals, and the data lines 8 are arranged to vertically cross the gate lines 2 and the storage electrode lines 4.

In addition, on the gate line 2 adjacent to the intersection of the gate line 2 and the data line 8, the semiconductor layer 6 is formed in a pattern, and the drain electrode 9a led out from the data line 8 and the source electrode 9b formed together at the time of the formation of the above-described data line 8 are arranged to be opposed to each other on the semiconductor layer 6 and to overlap each other.

In addition, in the pixel region defined by the gate line 2 and the data line 8, the pixel electrode 12 made of ITO is arranged, and at this time, the pixel electrode 12 is arranged in the entire pixel region, not only in contact with the source electrode 9b, but also overlapping with a part of the data line 8 and the gate line 2.

Fig. 2 is a sectional view taken along line ii-ii' of fig. 1. As shown in fig. 2, a gate electrode 2a and a storage electrode line 4a are formed on a lower substrate 20 at a position spaced apart from the gate electrode by a predetermined distance, and a gate insulating film 5 is formed on the front surface of the lower substrate 20. Further, a semiconductor layer 6 is formed in a pattern by a known process on the gate insulating film 5 located on the gate electrode 2a, and a drain electrode 9a and a source electrode 9b formed together at the time of forming the data line 8 are formed on the semiconductor layer 6 so as to be spaced apart from each other.

An organic insulating film 10 having a low dielectric constant is coated on the front surface of the lower substrate 20 forming the above-described structure, and a contact hole for exposing the source electrode is provided in the organic insulating film 10, and on the organic insulating film 10, a pixel electrode 12 is formed to overlap with a portion of the gate electrode 2a and the data line 8 while a portion corresponding to the pixel region is in contact with the source electrode 9b through the contact hole.

Here, the organic insulating film 10, the pixel electrode 12, and the data line 8 serve as an insulating layer, and have a function of planarizing a lower layer. In the past, benzocyclobutene (BCB) was used to increase the aperture ratio of the insulating thin film layer, but the benzocyclobutene is expensive and the method of manufacturing the contact hole has a problem that a Reactive Ion Etching (RIE) process using a photoresist is necessary.

Disclosure of Invention

In view of the above-described deficiencies of the prior art, it is an object of the present invention to provide a positive photoresist composition for an organic insulating film of a high-aperture liquid crystal display device, which has excellent adhesion to a metal, UV transmittance, residual film ratio, flatness, and pattern stability when forming an organic insulating film of a high-aperture liquid crystal display device having high transmittance characteristics, and which is low in raw material cost and does not require reactive ion etching by a photoresist. .

In order to realize the purposes, the adopted technical scheme is as follows:

a positive photoresist composition for an organic insulating film of a high-aperture-ratio liquid crystal display element comprises the following components in parts by weight: 7-35 parts of adhesive resin, 4-10 parts of photosensitizer and 0.01-3 parts of silicon compound containing epoxy group or amino group, wherein the adhesive resin is one of adhesive resin a and adhesive resin b or a mixture of the two;

wherein the general structure of the binder resin a is general formula 1:

in the above formula 1, X is a hydrogen atom or a methyl group, Y ₁ Is an alkyl or hydroxyalkyl group having 2 to 16 carbon atoms, Y ₂ Any one of the compounds of the structures of chemical formulas (I) to (VII);

in the formulae (I) to (VII), R ₁ Is hydrogen or methyl, R ₂ Is an olefin of 1 to 10 carbon atoms, R ₃ Is a hydrocarbon of 1 to 10 carbon atoms, R ₄ Is hydrogen or methyl;

the binder resin a represented by the above general formula 1 is a copolymer having a double bond of a monomer containing a carboxylic acid and a monomer containing a double bond, and if the composition of the present invention containing such a copolymer is coated to form a pattern, defects such as residue do not occur after development, and the planarization rate is very excellent. Y of the above general formula 1 ₁ Is an alkyl or hydroxyalkyl radical having 2 to 16 carbon atomsBase, contributing to the improvement of the adhesive force, Y ₂ Unlike conventional acrylic copolymerized binder resin resins, which include an aromatic group, including a bulky alicyclic structure, not only increases the residual film ratio, but also has a high glass transition temperature and excellent heat resistance.

Further, the binder resin a of formula 1 has an average molecular weight of 2000 to 50000, a degree of dispersion of 1.0 to 5.0, and an acid value of 10 to 130KOH mg/g. Preferably, the average molecular weight is 5000 to 30000, the dispersity is 1.6 to 2.7, and the acid value is 50 to 110KOH mg/g.

The general structure of the binder resin b is general formula 2:

in formula 2, wherein the repeating units A and B are each independently selected from any one of benzyl methacrylate (BZMA), styrene (Styrene; sty), α -methylstyrene, isobornyl acrylate and isobornyl methacrylate, dicyclopentanyl acrylate, dicyclopentanyl methacrylate, dicycloalkenyl acrylate, dicycloalkenyl methacrylate, dicyclopentenylmethacrylate (DCPMA), dicyclopentenoxyethoxy acrylate, dicyclopentenylethyl (meth) acrylate, hydroxyethyl methacrylate (HEMA), dicyclopentenylethoxy acrylate, lauryl Methacrylate (LMA), and dicyclopentenylethoxy (meth) acrylate, glycidyl Methacrylate (GMA), hydroxyethyl methacrylate, N-dimethyl- (meth) acrylamide, and acrylamide, the repeating unit C is either Acrylic Acid (AA) or methacrylic acid (MAA); wherein the binder resin B having the structure of formula 2 is an arbitrary copolymer containing no relation to the arrangement order of A, B and C.

Further, the binder resin b of the general formula 2 has an average molecular weight of 2000 to 100000, a dispersion degree of 1.0 to 5.0, and an acid value of 15 to 200KOH mg/g, and preferably, an average molecular weight of 5000 to 30000, a dispersion degree of 1.6 to 2.7, and an acid value of 30 to 120KOH mg/g.

When the binder resin b represented by formula 2 is used, almost the same effect is exhibited as when the binder resin a represented by formula 1 is used. In the binder resin represented by the above general formula 2, other types of polymerization units may be introduced within a range not interfering with the object of the present invention.

When the binder resin a represented by the above general formula 1 and the binder resin b represented by the general formula 2 are used in combination, the compatibility between the photosensitizer and the binder resin in the composition increases, and not only the cracking resistance of the pattern is improved, but also the whitening phenomenon (whitening) disappears.

Further, as the sensitizer contained in the photoresist composition of the present invention, commonly used sensitizers may be used, but it is preferable to use one or more selected from compounds having the structures of the following formulae 3 to 11 in order to improve transparency and minimize the input amount.

In the above general formulae 3 to 11, R' is any of a hydrogen atom, 2, 1-diazepin-4-sulfonamide ester or 2, 1-diazepin-5-sulfonamide ester, and has the following structure:

the R is ₁ ～R ₅ Each independently is any one of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or a cycloalkyl group having 4 to 10 carbon atoms; r ₆ 、R ₈ 、R ₁₀ And R ₁₂ Each independently is any one of a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; r ₇ 、R ₉ 、R ₁₁ And R ₁₃ Each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or a group having 1 to 6 carbon atoms4 to 10 cycloalkyl groups or any of functional groups selected from the following molecular structural formulae a to c:

in the above molecular structural formulae a to c, n is an integer of 0 to 3, R' is any of a hydrogen atom, 2, 1-diazepin-4-sulfonamide ester, or 2, 1-diazepin-5-sulfonamide ester; r ₁₄ Is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or a cycloalkyl group having 4 to 10 carbon atoms.

By appropriately adjusting the combination of the binder resin and the photosensitizer according to the present invention, a photoresist composition for an organic insulating film can be produced, which is capable of maintaining excellent adhesion to a metal, uv transmittance, residual film ratio, flatness, and pattern stability.

Further, the silicon compound additive having an epoxy group or an amino group contained in the positive photoresist composition of the present invention can improve the adhesion between the ITO electrode and the composition and improve the heat resistance after curing. The silicon compound containing an epoxy group or an amine group is at least one of 3- (2-aminoethylamino) propyltrimethoxysilane, (3-glycidoxypropyl) trimethoxysilane, (3-glycidoxypropyl) triethoxysilane, (3-glycidoxypropyl) methyldimethoxysilane, (3-glycidoxypropyl) methyldioxysilane, (3-glycidoxypropyl) dimethylmethoxysilane, (3-glycidoxypropyl) dimethylethoxysilane, 3, 4-epoxybutyltrimethoxysilane, 3, 4-epoxybutyltriethoxysilane, 2- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3, 4-epoxycyclohexyl) ethyltriethoxysilane, and aminopropyltrimethoxysilane.

Further, additives such as a photosensitizer, a thermal polymerization inhibitor, an antifoaming agent, a leveling agent, and the like may be added to the composition of the present invention as necessary.

Further, the composition of the present invention may be applied with a solvent, spin-coated on a substrate, then irradiated with ultraviolet rays through a mask, developed with an alkali developing solution to form an organic insulating film, and added with a solvent to have a viscosity ranging from 2 to 20cps. More preferably, the viscosity is adjusted to 2 to 10cps, and there is no pin hole (pin hole) of the film after coating, which is more advantageous to adjust the thickness of the film. Such a solvent is used not only for adding and mixing and dissolving the binder resin, the photosensitizer and other additives, but also for obtaining excellent coatability and a transparent film, in consideration of compatibility of the binder resin, the photosensitizer and other compounds.

Further, the solvent is at least one of ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl ether, methyl methoxypropionate, ethyl Ethoxypropionate (EEP), ethyl lactate, propylene Glycol Methyl Ether Acetate (PGMEA), propylene glycol methyl ether, propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol methyl ether acetate, diethylene glycol ethyl ether acetate, acetone, methyl isobutyl ketone, cyclohexanone, dimethylformamide (DMF), N-Dimethylacetamide (DMAC), N-methylpyrrolidone (NMP), γ -butyrolactone, diethyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran (THF), methanol, ethanol, propanol, isopropanol, methyl cellosolve, ethyl cellosolve, ethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol methyl ether, toluene, xylene, hexane, heptane, and octane.

Compared with the prior art, the invention has the beneficial effects that:

the positive photoresist composition for an organic insulating film of a high-aperture-ratio liquid crystal display device according to the present invention has excellent heat resistance when forming an insulating film, and is excellent in adhesion to metals and inorganic substances, UV transmittance, residual film ratio, flatness, and pattern stability. The positive photoresist composition can change the structure and the composition ratio of the adhesive resin, adjust the characteristics required by the photoresist for the organic insulating film of the high-aperture-ratio liquid crystal display element, and has lower raw material cost and no need of reactive ion etching of the photoresist.

Drawings

FIG. 1 is a plan view of a unit cell of a conventional TFT LCD having a high aperture ratio;

FIG. 2 is a cross-sectional view taken along line II-II' of FIG. 1;

2, a gate line; 2a, a grid electrode; 4. a storage electrode line; 4a, a storage electrode; 5. a gate insulating film; 6. a semiconductor layer; 8. a data line; 9a, a drain electrode; 9b, a source electrode; 10. an organic insulating film; 12. a pixel electrode; 20. and (5) a lower substrate.

Detailed Description

The present invention is described below with reference to examples, which are provided for illustration only and are not intended to limit the scope of the present invention.

Example 1

A positive photoresist composition for an organic insulating film was prepared by adding a binder resin, a photosensitizer, a silicon compound containing an epoxy group or an amino group, a predetermined photosensitizer, a thermal polymerization inhibitor, an antifoaming agent, and a leveling agent in this order to a reaction mixing tank equipped with an ultraviolet shielding film and a stirrer according to the composition and content described in Table 1 below, and then stirring at room temperature. Next, a solvent was applied to the composition to adjust the viscosity of the positive photoresist composition to 4.5cps.

In the examples of tables 1 and 2 below, in general formula 1 of binder resin a, all of X and Y1 are methyl groups, and in the case of binder resins 1 to ii, Y2 is labeled as formula (ii), and so on, and in the case of other structures, R1 to R4 are all methyl groups. In the examples, the types of the repeating units a, B and C of general formula 2 in the binder resin B are represented by general formula 2 (a/B/C) in tables 1 and 2.

Examples 2 to 27

A positive photoresist composition for an organic insulating film of a high-aperture-ratio liquid crystal display device was produced by the same method, except that the components and the content of the composition of example 1 were changed according to the compositions described in tables 1 and 2.

TABLE 1 Components and amounts of the compositions of examples 1-17

TABLE 2 Components and amounts of the compositions of examples 18-27

In tables 1 and 2 above, the average molecular weight of the binder of formula 1 is 9000, the dispersion degree is 2.1, and the acid value is 90, and the average molecular weight of the binder of formula 2 is 7000, the dispersion degree is 2.1, and the acid value is 90. In addition, in the photosensitizer of the formula 8, R' is 2, 1-diazepin-4-sulfonamide ₁ To R ₄ All are H, in a sensitizer of the formula 9, R' is 2, 1-diazepin-4-sulfonamide ₁ To R ₃ Are all CH ₃ 。

Comparative examples 1 to 5

Comparative examples 1 to 5 positive photoresist compositions for organic insulating films of high-aperture liquid crystal display devices were produced in the same manner, except that the components and content of the compositions were changed according to the compositions shown in table 3 below, using a binder resin represented by general formula 12 (average molecular weight 10000) in place of the binder resin of example 1.

In all of the examples and comparative examples described in tables 1 to 3, the silicon compound was 3- (2-aminoethylamino) propyltrimethoxysilane.

In the above formula 12, p is 0.3, q is 0.2, and r is 0.5.

TABLE 3 Components and amounts of the compositions of comparative examples 1-5

In table 3 above, the average molecular weight of the adhesive of formula 1 was 9000, the dispersion degree was 2.5, and the acid value was 90, and the average molecular weight of the adhesive of formula 12 was 70000, the dispersion degree was 2.5, and the acid value was 90. In addition, in the photosensitizer of the formula 8, R' is 2, 1-diazepin-4-sulfonamide ₁ To R ₄ All are H, in a sensitizer of the formula 9, R' is 2, 1-diazepin-4-sulfonamide ₁ To R ₃ Are all CH ₃ 。

Testing of

In the above examples and comparative examples, evaluation of the positive photoresist composition was performed on a substrate such as a silicon wafer or a glass plate, and performance evaluation of thermal characteristics, transmittance (T%, 400 nm), flatness (Uniformity), residual film ratio, pattern formation, etc. of the positive photoresist composition was performed, and the results thereof are shown in tables 4 and 5 below.

(1) Adhesion of metals to inorganic substances (Adhesion)

A positive photoresist composition was applied to a substrate at 350rpm for 20 seconds using a spin coater, prebaked at 90 ℃ for 2 minutes, exposed to light at 365 nm for 15 seconds, postbaked at 220 ℃ for 60 minutes to form a positive photoresist film, which was then put into an auto bake (Autoclave) and cured at 100 ℃ for 1 hour. The sample fermented by the automatic spatula was scratched (Scratch) with a Cross Cutter (Cross Hatch Cutter) to expose the substrate, and then attached with a tape and detached. If 80 or more of the 100 cells are not detached from the substrate, it is determined as "good", otherwise, it is determined as "bad".

(2) UV transmittance

After coating a positive photoresist composition on a substrate at 350rpm for 20 seconds using a spin coater, prebaking (prebake) at 90 ℃ for 2 minutes, the positive photoresist composition was immersed in a TMAH2.38% solution for 50 seconds, then rinsed with pure Water (DI Water) for 60 seconds, then blown with compressed air, exposed to light (blishing), and then postbaking (postbake) at 220 ℃ for 60 minutes at a wavelength of 400nm, and the ultraviolet transmittance of positive photoresist film lithography of about 3.0 to 3.5 micrometers (μm) was measured.

(3) Residual film rate

A positive photoresist composition was spin-coated on a substrate, and the thickness after Pre-baking (Pre-Bake) and Post-baking (Post Bake) were performed to measure the thickness ratio (%) of a film formed after removing the solvent.

(4) Forming a pattern

The silicon wafer on which the photoresist pattern was formed was cut from the vertical direction of the Hole (Hole) pattern, and observed with an electron microscope from the cross-sectional direction of the pattern. The pattern side wall (side wall) stands at an angle of 80 degrees or more with respect to the substrate, and the film reduction is regarded as "good", and the film reduction is regarded as "film reduction".

(5) Chemical resistance

After a positive photoresist composition was coated on a substrate using a spin coater, a positive photoresist film formed by a pre-bake (prebake) and post-bake (postbake) process was immersed in a Stripper (Stripper) and etching (etchunt) solution at 40 ℃ for 10 minutes, and then it was observed whether the transmittance and thickness of the positive photoresist film were changed. When the transmittance and the thickness were not changed, the sample was judged to be "good", and when the transmittance and the thickness were changed, the sample was judged to be "poor".

TABLE 4 Performance test data for the compositions of examples 1 to 27

TABLE 5 Performance test data for compositions of comparative examples 1-5

As apparent from the above results, the positive photoresist composition for an organic insulating film of a high transmittance liquid crystal display device according to the present invention is excellent not only in heat resistance but also in adhesion to metals and inorganic substances, UV transmittance, residual film ratio, flatness, and pattern stability, unlike the conventional positive photoresist composition, and the composition of the present invention is low in raw material cost and does not require a reactive ion etching process using a photoresist.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, which is intended to cover any modifications, equivalents, improvements, etc. within the spirit and scope of the present invention.

Claims (7)

1. A positive photoresist composition for an organic insulating film of a high-aperture-ratio liquid crystal display element, characterized by comprising the following components in parts by weight: 7-35 parts of adhesive resin, 4-10 parts of photosensitizer and 0.01-3 parts of silicon compound containing epoxy group or amino group, wherein the adhesive resin is one of adhesive resin a and adhesive resin b or a mixture of the two;

wherein the general structure of the binder resin a is general formula 1:

in the above formula 1, X is a hydrogen atom or a methyl group, Y ₁ Is an alkyl or hydroxyalkyl group having 2 to 16 carbon atoms, Y ₂ Any one of the compounds with the structures of chemical formulas (I) to (VII);

in the formulae (I) to (VII), R ₁ Is hydrogen or methyl, R ₂ Is an olefin of 1 to 10 carbon atoms, R ₃ Is a hydrocarbon compound of 1 to 10 carbon atoms, R ₄ Is hydrogen or methyl;

the general structure of the binder resin b is general formula 2:

in formula 2, wherein the repeating units a and B are each independently selected from any one of benzyl methacrylate (BZMA), styrene (Sty), α -methylstyrene, isobornyl acrylate, isobornyl methacrylate, dicyclopentanyl acrylate, dicyclopentanyl methacrylate, dicycloalkenyl acrylate, dicycloalkenyl methacrylate, dicyclopentenyl methacrylate (DCPMA), dicyclopentenyl ethoxy acrylate, dicyclopentenyl ethoxy (meth) acrylate, hydroxyethyl methacrylate (HEMA), dicyclopentenyl ethoxy acrylate, lauryl Methacrylate (LMA), and dicyclopentenyl ethoxy (meth) acrylate, glycidyl Methacrylate (GMA), hydroxyethyl methacrylate, N-dimethyl- (meth) acrylamide, and acrylamide, the repeating unit C is Acrylic Acid (AA) or methacrylic acid (MAA); wherein the binder resin B having the structure of formula 2 is an arbitrary copolymer containing no relation to the arrangement order of A, B and C.

2. The composition as claimed in claim 1, wherein the binder resin a of formula 1 has an average molecular weight of 5000 to 30000, a dispersity of 1.6 to 2.7, and an acid value of 50 to 110KOH mg/g.

3. The composition according to claim 1, wherein the binder resin b of formula 2 has an average molecular weight of 5000 to 30000, a dispersity of 1.6 to 2.7, and an acid value of 30 to 120KOH mg/g.

4. The composition of claim 1, wherein the sensitizer is at least one compound having a structure represented by the following general formula 3 to general formula 11:

in the above general formulae 3 to 11, R' is any of a hydrogen atom, a 2, 1-diazepin-4-sulfonamide ester, or a 2, 1-diazepin-5-sulfonamide ester; the R is ₁ ～R ₅ Each independently is any one of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or a cycloalkyl group having 4 to 10 carbon atoms; r ₆ 、R ₈ 、R ₁₀ And R ₁₂ Each independently is any one of a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; r ₇ 、R ₉ 、R ₁₁ And R ₁₃ Each independently is any one of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cycloalkyl group having 4 to 10 carbon atoms, or a functional group selected from the following molecular structural formulae a to c:

in the above molecular structural formulae a to c, n is an integer of 0 to 3, R' isAny one of a hydrogen atom, 2, 1-diazepin-4-sulfonamide ester or 2, 1-diazepin-5-sulfonamide ester; r ₁₄ Is any one of an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or a cycloalkyl group having 4 to 10 carbon atoms.

5. The composition of claim 1, wherein the silicon compound containing an epoxy group or an amine group is at least one selected from the group consisting of 3- (2-aminoethylamino) propyltrimethoxysilane, (3-glycidoxypropyl) trimethoxysilane, (3-glycidoxypropyl) triethoxysilane, (3-glycidoxypropyl) methyldimethoxysilane, (3-glycidoxypropyl) methyldioxysilane, (3-glycidoxypropyl) dimethylmethoxysilane, (3-glycidoxypropyl) dimethylethoxysilane, 3, 4-epoxybutyltrimethoxysilane, 3, 4-epoxybutyltriethoxysilane, 2- (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3, 4-epoxycyclohexyl) ethyltriethoxysilane, and aminopropyltrimethoxysilane.

6. The composition of claim 1, further comprising a solvent, wherein the viscosity of the composition is adjusted to 2 to 20cps.

7. The composition of claim 6, wherein the solvent is at least one of ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl ether, methyl methoxypropionate, ethyl Ethoxypropionate (EEP), ethyl lactate, propylene Glycol Methyl Ether Acetate (PGMEA), propylene glycol methyl ether, propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol methyl ether acetate, diethylene glycol ethyl ether acetate, acetone, methyl isobutyl ketone, cyclohexanone, dimethylformamide (DMF), N-Dimethylacetamide (DMAC), N-methylpyrrolidone (NMP), gamma-butyrolactone, diethyl ether, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, tetrahydrofuran (THF), methanol, ethanol, propanol, isopropanol, methyl cellosolve, ethyl cellosolve, diethylene glycol methyl ether, diethylene glycol diethyl ether, dipropylene glycol methyl ether, toluene, xylene, hexane, heptane, and octane.

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