CN115216177B - Modified photosensitive ink-assisted large-area metal patterning material and preparation method thereof - Google Patents
Modified photosensitive ink-assisted large-area metal patterning material and preparation method thereof Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/101—Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Abstract
The invention discloses a large-area metal patterning material assisted by modified photosensitive ink and a preparation method thereof, wherein the modified photosensitive ink comprises photosensitive ink and 80-95% of metal patterning material; solvent, 5-20%; 0.5-2% of active auxiliary agent; the full dry transfer printing of the photosensitive ink structure is realized by precisely regulating and controlling the surface energy of the photosensitive ink material and controlling parameters (stripping temperature, stripping speed, and the like) during transfer to change the interface binding energy. And processing the high-density extensible metal conductive structure on the flexible substrate by utilizing metal deposition processes such as ion beam sputtering and the like. The invention solves the problems of unmatched performance, unstable interface and the like caused by the auxiliary transfer printing of the sacrificial layer and wet etching, and improves the stability of the metal structure under the condition of large deformation by realizing the full dry transfer printing in-situ preparation of the metal pattern of the photosensitive ink structure.
Description
Technical Field
The invention relates to the field of micro-nano manufacturing, in particular to a large-area metal patterning material assisted by modified photosensitive ink and a preparation method thereof.
Background
The flexible wearable electronic has wide application prospect in the fields of health monitoring, motion monitoring, man-machine interaction, artificial intelligence, aerospace, communication, biotechnology, medical health, military and the like. One of the core design ideas of the flexible wearable electronics is to realize performance regulation (stretchable, conductive) through a patterned metal structure on a flexible substrate, and the size and processing precision of the metal structure directly influence the performance and function of the flexible wearable electronics. The processing technology of the metal structure on the flexible substrate mainly comprises the following steps: transfer printing process, 3D printing, laser etching, screen printing, inkjet printing, etc. The transfer printing process is a mainstream process for processing the metal structure on the flexible substrate due to simple process and low cost. The transfer printing technology is a technology that firstly, a metal micro-nano structure is processed on a hard substrate by utilizing technologies such as photoetching, stripping and the like, and then the micro-nano structure on the hard substrate is transferred to a flexible substrate to be processed. This technique typically transfers a metal pattern onto a flexible receptor by means of a sacrificial layer, which is removed by a wet etching process, thereby transferring the metal structure onto a flexible substrate. However, such transfer processes still have significant limitations. Mainly in two aspects: firstly, the mechanical properties of the metal and the flexible substrate are not matched, and the problems of interface instability and the like under the condition of large deformation caused by interface incompatibility easily occur in the transfer process of large-area metal; second, the transfer process aided by the sacrificial layer requires additional wet chemical etching of the sacrificial layer, which dissolves the polymer flexible substrate and breaks the metal-substrate interface, thereby affecting the device performance.
Disclosure of Invention
In view of the above, the invention provides a modified photosensitive ink assisted large-area metal pattern method, which realizes the full dry transfer of a photosensitive ink structure by precisely regulating and controlling the surface energy of a photosensitive ink material and controlling parameters (stripping temperature, stripping speed, and the like) during transfer to change interface binding energy. And processing the high-density extensible metal conductive structure on the flexible substrate by utilizing metal deposition processes such as ion beam sputtering and the like. The invention solves the problems of unmatched performance, unstable interface and the like caused by the auxiliary transfer printing of the sacrificial layer and wet etching, and improves the stability of the metal structure under the condition of large deformation by realizing the full dry transfer printing in-situ preparation of the metal pattern of the photosensitive ink structure.
A large-area metal patterning material assisted by modified photosensitive ink comprises the following components in percentage by mass:
80-95% of photosensitive ink
Solvent 5-20%
0.5 to 2 percent of active auxiliary agent
Preferably, the components in mass percent comprise:
85-90% of photosensitive ink
Solvent 5-10%
0.5 to 1 percent of active auxiliary agent
Preferably, the photosensitive ink selected is a commercially available PR2000SA type etch resist ink.
Preferably, the selected solvent comprises at least one of ethyl 2-oxoacetate, acetone, cyclohexanone, dibasic esters, ethyl 3-ethoxypropionate, butyl acetate, dimethyl carbonate, propylene glycol methyl ether acetate.
Preferably, the coagent comprises at least one of dodecylbenzenesulfonic acid, fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether, sodium dodecyl sulfate, octylphenol polyoxyethylene ether, dodecylphenol, and dodecylalcohol amine sulfate.
The preparation method of the modified photosensitive ink comprises the following steps:
weighing photosensitive ink with a certain proportion, putting the photosensitive ink into a beaker, slowly adding a solvent along the edge of the beaker, stirring at a rotating speed of 100-200r/min for 10-30min, slowly adding a coagent along the edge of the beaker after the solution is uniformly mixed, and stirring at a speed of 150-200r/min for 5-20min to obtain a uniform mixed solution;
and (3) carrying out air suction bubble treatment on the uniform mixed solution obtained in the steps, and standing in the dark to obtain the modified photosensitive ink.
Preferably, the method comprises:
weighing photosensitive ink with a certain proportion, putting the photosensitive ink into a beaker, slowly adding a solvent along the edge of the beaker, stirring at a rotating speed of 150-200r/min for 15-25min, slowly adding a coagent along the edge of the beaker after the solution is uniformly mixed, and stirring at a stirring speed of 150-180r/min for 10-15min to obtain a uniform mixed solution;
and (3) carrying out air suction bubble treatment on the uniform mixed solution obtained in the steps, and standing in the dark to obtain the modified photosensitive ink.
The basic processing flow of the stripping, transfer printing and metal patterning process of the modified photosensitive ink comprises the following steps:
gluing: and obtaining the modified photosensitive ink which is uniformly and flatly distributed on the substrate by adopting a static spin coating mode.
Pre-baking: after the gumming is completed, the modified photosensitive ink on the substrate is placed on a hot plate and heated at 80 ℃ for 10min.
Exposure: contact exposure was performed for 4s using an ultraviolet lithography machine.
Stripping: the modified photosensitive ink obtained by exposure was peeled off from the silicon substrate with a heat release tape. Stripping prior to development allows the structure to be more clear and complete after the next development step without transferring modified photosensitive ink outside the structure to the flexible polymer substrate.
Developing: adopting immersion development; the modified photosensitive ink peeled from the silicon substrate onto the heat release tape was developed in a developer (1% aqueous sodium hydroxide solution) for 12s.
Transfer printing: transferring the mask pattern onto a flexible substrate; transferring the modified photosensitive ink mask pattern on the heat release adhesive tape obtained after development to a flexible polymer substrate at a temperature of 120 ℃ on a hot plate in a near zero strain and without damage; the flexible polymer substrate refers to polydimethylsiloxane or thermoplastic polyurethane elastomer, etc.
Film deposition: the process ultimately requires the fabrication of high density ductile metal conductive structures on flexible substrates, which require the deposition of a layer of metal to render the structures conductive. The specific operation is as follows: a metal layer (with specific thickness according to specific requirements) is deposited on the modified photosensitive ink mask pattern by using metal deposition processes such as ion beam sputtering.
Dry photoresist stripping: and finally, removing the photoresist to obtain the high-density extensible metal conductive structure, and removing the photoresist by adopting a dry method. The specific operation is as follows: and slowly stripping the metal outside the structure and the modified photosensitive ink by using an adhesive tape to obtain the high-density extensible metal conductive structure on the flexible polymer substrate.
Compared with the prior art, the invention mainly solves two existing technical problems: firstly, the problems of interface instability and the like under the condition of large deformation caused by the incompatibility of mechanical properties of materials can be solved by modifying photosensitive ink; and secondly, the problem that the transfer printing process assisted by the sacrificial layer needs to etch the sacrificial layer by an additional wet chemical method to dissolve and destroy interface adhesion on the polymer flexible substrate so as to influence the stability of the device can be solved by the full dry transfer printing process.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a process flow diagram.
Fig. 2 is a pattern of an ink mask before transfer in embodiment 1.
Fig. 3 is a metal pattern on a flexible substrate according to embodiment 1.
Detailed Description
The technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
A modified photosensitive ink assisted large area metal patterning method. Comprising the following steps:
a. the modified photosensitive ink comprises the following components in percentage by mass:
photosensitive ink 90%
2-Oxoacetic acid ethyl ester 9.05%
Dodecyl benzene sulfonic acid 0.95%
The photosensitive ink selected was a commercially available PR2000SA type etch resist ink.
The preparation method of the modified photosensitive ink comprises the following steps:
weighing a certain proportion of photosensitive ink, putting the photosensitive ink into a beaker, slowly adding ethyl 2-oxyacetate along the edge of the beaker, stirring at a rotating speed of 150r/min for 15min, slowly adding dodecylbenzene sulfonic acid along the edge of the beaker after the solution is uniformly mixed, and stirring at a stirring speed of 150r/min for 10min to obtain a uniform mixed solution; and (3) carrying out air suction bubble treatment on the uniform mixed solution obtained in the steps, and standing in the dark to obtain the modified photosensitive ink.
b. The basic processing flow of the stripping, transfer printing and metal patterning process of the modified photosensitive ink comprises the following steps:
gluing: and obtaining the modified photosensitive ink which is uniformly and flatly distributed on the substrate by adopting a static spin coating mode.
Pre-baking: after the glue application was completed, it was placed on a hot plate and heated at 80℃for 10min.
Exposure: contact exposure was performed for 4s using an ultraviolet lithography machine.
Stripping: stripping prior to development can make the structure clearer and more complete after the next development, and the modified photosensitive ink outside the structure cannot be transferred to the flexible polymer substrate. The specific operation is as follows: the modified photosensitive ink obtained by exposure was peeled off from the silicon substrate with a heat release tape.
Developing: adopting immersion development; the modified photosensitive ink peeled from the silicon substrate onto the heat release tape was developed in a developer (1% aqueous sodium hydroxide solution) for 12s.
Transfer printing: transferring the mask pattern onto a flexible substrate; the modified photosensitive ink mask pattern on the developed thermal release tape was transferred to a flexible polymer substrate (polydimethylsiloxane) near zero strain and without damage on a hot plate at 120 ℃.
Film deposition: the process ultimately requires the fabrication of high density ductile metal conductive structures on flexible substrates, which require the deposition of a layer of metal to render the structures conductive. The specific operation is as follows: a metal layer (with specific thickness according to specific requirements) is deposited on the modified photosensitive ink mask pattern by using metal deposition processes such as ion beam sputtering.
Dry photoresist stripping: and finally, removing the photoresist to obtain the high-density extensible metal conductive structure, and removing the photoresist by adopting a dry method. The specific operation is as follows: and slowly stripping the metal outside the structure and the modified photosensitive ink by using an adhesive tape to obtain the high-density extensible metal conductive structure on the flexible polymer substrate.
Example 2
A modified photosensitive ink assisted large area metal patterning method. Comprising the following steps:
a. the modified photosensitive ink comprises the following components in percentage by mass:
photosensitive ink 89.97%
Acetone 9.21%
Dodecyl benzene sulfonic acid 0.82%
The photosensitive ink selected was a commercially available PR2000SA type etch resist ink.
The preparation method of the modified photosensitive ink comprises the following steps:
weighing photosensitive ink with a certain proportion, putting the photosensitive ink into a beaker, slowly adding acetone along the edge of the beaker, stirring at a rotating speed of 180r/min for 20min, slowly adding dodecylbenzene sulfonic acid along the edge of the beaker after the solution is uniformly mixed, and stirring at a speed of 180r/min for 15min to obtain a uniform mixed solution; and (3) carrying out air suction bubble treatment on the uniform mixed solution obtained in the steps, and standing in the dark to obtain the modified photosensitive ink.
b. The basic processing flow of the stripping, transfer printing and metal patterning process of the modified photosensitive ink comprises the following steps:
gluing: and obtaining the modified photosensitive ink which is uniformly and flatly distributed on the substrate by adopting a static spin coating mode.
Pre-baking: after the glue application was completed, it was placed on a hot plate and heated at 80℃for 10min.
Exposure: contact exposure was performed for 4s using an ultraviolet lithography machine.
Stripping: stripping prior to development can make the structure clearer and more complete after the next development, and the modified photosensitive ink outside the structure cannot be transferred to the flexible polymer substrate. The specific operation is as follows: the modified photosensitive ink obtained by exposure was peeled off from the silicon substrate with a heat release tape.
Developing: adopting immersion development; the modified photosensitive ink peeled from the silicon substrate onto the heat release tape was developed in a developer (1% aqueous sodium hydroxide solution) for 12s.
Transfer printing: transferring the mask pattern onto a flexible substrate; the modified photosensitive ink mask pattern on the developed heat release tape was transferred to a flexible polymer substrate (thermoplastic polyurethane elastomer) at 120 ℃ on a hot plate with near zero strain and no damage.
Film deposition: the process ultimately requires the fabrication of high density ductile metal conductive structures on flexible substrates, which require the deposition of a layer of metal to render the structures conductive. The specific operation is as follows: a metal layer (with specific thickness according to specific requirements) is deposited on the modified photosensitive ink mask pattern by using metal deposition processes such as ion beam sputtering.
Dry photoresist stripping: and finally, removing the photoresist to obtain the high-density extensible metal conductive structure, and removing the photoresist by adopting a dry method. The specific operation is as follows: and slowly stripping the metal outside the structure and the modified photosensitive ink by using an adhesive tape to obtain the high-density extensible metal conductive structure on the flexible polymer substrate.
Example 3
A modified photosensitive ink assisted large area metal patterning method. Comprising the following steps:
a. the modified photosensitive ink comprises the following components in percentage by mass:
photosensitive ink 89.93%
2-Oxoacetic acid ethyl ester 9.27%
0.8 percent of fatty alcohol polyoxyethylene ether
The photosensitive ink selected was a commercially available PR2000SA type etch resist ink.
The preparation method of the modified photosensitive ink comprises the following steps:
weighing PR-2000SA with a certain proportion, putting into a beaker, slowly adding ethyl 2-oxyacetate along the edge of the beaker, stirring at a rotating speed of 180r/min for 25min, slowly adding fatty alcohol polyoxyethylene ether along the edge of the beaker after the solution is uniformly mixed, and stirring at a speed of 180r/min for 15min to obtain a uniform mixed solution; and (3) carrying out air suction bubble treatment on the uniform mixed solution obtained in the steps, and standing in the dark to obtain the modified photosensitive ink.
b. The basic processing flow of the stripping, transfer printing and metal patterning process of the modified photosensitive ink comprises the following steps:
gluing: and obtaining the modified photosensitive ink which is uniformly and flatly distributed on the substrate by adopting a static spin coating mode.
Pre-baking: after the glue application was completed, it was placed on a hot plate and heated at 80℃for 10min.
Exposure: contact exposure was performed for 4s using an ultraviolet lithography machine.
Stripping: stripping prior to development can make the structure clearer and more complete after the next development, and the modified photosensitive ink outside the structure cannot be transferred to the flexible polymer substrate. The specific operation is as follows: the modified photosensitive ink obtained by exposure was peeled off from the silicon substrate with a heat release tape.
Developing: adopting immersion development; the modified photosensitive ink peeled from the silicon substrate onto the heat release tape was developed in a developer (1% aqueous sodium hydroxide solution) for 12s.
Transfer printing: transferring the mask pattern onto a flexible substrate; the modified photosensitive ink mask pattern on the developed heat release tape was transferred to a flexible polymer substrate (thermoplastic polyurethane elastomer) at 120 ℃ on a hot plate with near zero strain and no damage.
Film deposition: the process ultimately requires the fabrication of high density ductile metal conductive structures on flexible substrates, which require the deposition of a layer of metal to render the structures conductive. The specific operation is as follows: a metal layer (with specific thickness according to specific requirements) is deposited on the modified photosensitive ink mask pattern by using metal deposition processes such as ion beam sputtering.
Dry photoresist stripping: and finally, removing the photoresist to obtain the high-density extensible metal conductive structure, and removing the photoresist by adopting a dry method. The specific operation is as follows: and slowly stripping the metal outside the structure and the modified photosensitive ink by using an adhesive tape to obtain the high-density extensible metal conductive structure on the flexible polymer substrate.
Example 4
A modified photosensitive ink assisted large area metal patterning method. Comprising the following steps:
a. the modified photosensitive ink comprises the following components in percentage by mass:
photosensitive ink 89.25%
Cyclohexanone 9.77%
Fatty alcohol polyoxyethylene ether 0.98%
The photosensitive ink selected was a commercially available PR2000SA type etch resist ink.
The preparation method of the modified photosensitive ink comprises the following steps:
weighing PR-2000SA with a certain proportion, putting into a beaker, slowly adding cyclohexanone along the edge of the beaker, stirring at a rotating speed of 160r/min for 25min, slowly adding fatty alcohol polyoxyethylene ether along the edge of the beaker after the solution is uniformly mixed, and stirring at a stirring speed of 160r/min for 15min to obtain a uniform mixed solution; and (3) carrying out air suction bubble treatment on the uniform mixed solution obtained in the steps, and standing in the dark to obtain the modified photosensitive ink.
b. The basic processing flow of the stripping, transfer printing and metal patterning process of the modified photosensitive ink comprises the following steps:
gluing: and obtaining the modified photosensitive ink which is uniformly and flatly distributed on the substrate by adopting a static spin coating mode.
Pre-baking: after the glue application was completed, it was placed on a hot plate and heated at 80℃for 10min.
Exposure: contact exposure was performed for 4s using an ultraviolet lithography machine.
Stripping: stripping prior to development can make the structure clearer and more complete after the next development, and the modified photosensitive ink outside the structure cannot be transferred to the flexible polymer substrate. The specific operation is as follows: the modified photosensitive ink obtained by exposure was peeled off from the silicon substrate with a heat release tape.
Developing: adopting immersion development; the modified photosensitive ink peeled from the silicon substrate onto the heat release tape was developed in a developer (1% aqueous sodium hydroxide solution) for 12s.
Transfer printing: transferring the mask pattern onto a flexible substrate; the modified photosensitive ink mask pattern on the developed heat release tape was transferred to a flexible polymer substrate (thermoplastic polyurethane elastomer) at 120 ℃ on a hot plate with near zero strain and no damage.
Film deposition: the process ultimately requires the fabrication of high density ductile metal conductive structures on flexible substrates, which require the deposition of a layer of metal to render the structures conductive. The specific operation is as follows: a metal layer (with specific thickness according to specific requirements) is deposited on the modified photosensitive ink mask pattern by using metal deposition processes such as ion beam sputtering.
Dry photoresist stripping: and finally, removing the photoresist to obtain the high-density extensible metal conductive structure, and removing the photoresist by adopting a dry method. The specific operation is as follows: and slowly stripping the metal outside the structure and the modified photosensitive ink by using an adhesive tape to obtain the high-density extensible metal conductive structure on the flexible polymer substrate.
Take specific example 1 as an example: please refer to fig. 1, 2 and 3; FIG. 1 is a schematic illustration of a process flow;
FIG. 2 is a schematic illustration of an ink mask pattern prior to transfer in accordance with example 1; fig. 3 is a metal pattern on a flexible substrate according to embodiment 1. As can be seen from the figure, the mask pattern obtained by peeling and transfer of the modified photosensitive ink has very high accuracy. In addition, the serpentine metal pattern on the flexible substrate obtained by stripping, transferring and metal patterning of the modified photosensitive ink has good stretching and bending properties, and has great application prospects in wearable electronic equipment, health monitoring, motion monitoring and the like; and in the preparation method of the specific examples 1-4, the metal is directly prepared in situ on the flexible substrate without contacting any solvent during the transfer process.
The invention has been described in detail, with specific examples applied to illustrate the principles and embodiments of the invention, the above examples are only used to help understand the method of the invention and its core ideas; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
It will be clear to those skilled in the art that, for convenience and brevity of description, the specific working procedures of the above-described system and unit may refer to the corresponding procedures in the foregoing method embodiments, which are not repeated here.
Claims (5)
1. A preparation method of a modified photosensitive ink-assisted large-area metal patterning material is characterized by comprising the following steps of:
the large-area metal patterning material assisted by the modified photosensitive ink comprises the following components in percentage by mass: 80-95% of photosensitive ink; solvent, 5-20%; 0.5-2% of active auxiliary agent;
the preparation of the modified photosensitive ink assisted large area metal patterning material comprises the following steps,
gluing: adopting a static spin coating mode to obtain modified photosensitive ink which is uniformly and flatly distributed on a substrate;
pre-baking: after the gluing is finished, the modified photosensitive ink on the substrate is placed on a hot plate and heated for 10min at 80 ℃;
exposure: using an ultraviolet photoetching machine to perform contact exposure for 4s;
stripping: stripping the modified photosensitive ink obtained by exposure from the silicon substrate by using a heat release adhesive tape;
developing: developing the modified photosensitive ink stripped from the silicon substrate to the heat release adhesive tape in a developing solution for 12s by adopting immersion development;
transfer printing: transferring the mask pattern onto a flexible substrate; transferring the modified photosensitive ink mask pattern on the heat release adhesive tape obtained after development to a flexible polymer substrate at a temperature of 120 ℃ on a hot plate in a near zero strain and without damage;
film deposition: depositing a layer of metal on the modified photosensitive ink mask pattern by utilizing an ion beam sputtering metal deposition process;
dry photoresist stripping: slowly stripping the metal outside the structure and the modified photosensitive ink by using an adhesive tape to obtain a high-density extensible metal conductive structure on the flexible polymer substrate; the photosensitive ink selected was PR2000SA type resist ink.
2. The method for preparing the modified photosensitive ink-assisted large-area metal patterning material according to claim 1, wherein the method comprises the following steps of: the selected solvent comprises at least one of ethyl 2-oxyacetate, acetone, cyclohexanone, dibasic ester, ethyl 3-ethoxypropionate, butyl acetate, dimethyl carbonate, propylene glycol methyl ether acetate.
3. The method for preparing the modified photosensitive ink-assisted large-area metal patterning material according to claim 1, wherein the method comprises the following steps of: the active auxiliary agent comprises at least one of dodecylbenzene sulfonic acid, fatty alcohol polyoxyethylene ether, alkylphenol polyoxyethylene ether, sodium dodecyl sulfate, octylphenol polyoxyethylene ether, dodecylphenol and dodecylalcohol amine sulfate.
4. The method for preparing the modified photosensitive ink-assisted large-area metal patterning material according to claim 1, wherein the method comprises the following steps of: the developing solution is 1% sodium hydroxide aqueous solution.
5. The method for preparing the modified photosensitive ink-assisted large-area metal patterning material according to claim 1, wherein the method comprises the following steps of: the flexible polymer substrate refers to polydimethylsiloxane or thermoplastic polyurethane elastomer.
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| JP2004053931A (en) * | 2002-07-19 | 2004-02-19 | Mitsubishi Chemicals Corp | Photosensitive composition, photosensitive image forming material, and image forming method using the same |
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